CN210575033U - Improve micro LED drive arrangement of common impedance influence - Google Patents
Improve micro LED drive arrangement of common impedance influence Download PDFInfo
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- CN210575033U CN210575033U CN201921661294.7U CN201921661294U CN210575033U CN 210575033 U CN210575033 U CN 210575033U CN 201921661294 U CN201921661294 U CN 201921661294U CN 210575033 U CN210575033 U CN 210575033U
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Abstract
The utility model discloses an improve common impedance influence's micro LED drive arrangement, drive circuit including pixel circuit and with pixel circuit connection, pixel circuit includes the pixel circuit, the emitting diode who is connected with the pixel circuit, first pixel field effect transistor, second pixel field effect transistor and third pixel field effect transistor, the pixel circuit is connected with pixel positive power supply and pixel negative power supply, first pixel field effect transistor is opened by drive circuit output voltage, second pixel field effect transistor connects in first pixel field effect transistor, third pixel field effect transistor is opened by the PWM signal, drive circuit includes drive circuit, the current source of being connected with drive circuit, first drive field effect transistor and second drive field effect transistor, the current source is used for providing standard current. The utility model discloses can improve common impedance, reduce and to receiving the voltage drop influence, can also reduce the area of metal level, help reduction in production cost.
Description
Technical Field
The utility model belongs to the technical field of LED, concretely relates to improve common impedance influence's micro LED drive arrangement.
Background
Nowadays, light emitting diodes or organic light emitting diodes capable of emitting light by themselves are widely used in various products, and for example, LEDs with excellent durability and light emitting efficiency are being developed rapidly in the related art of miniaturization, and are expected to replace the existing display screens in many application fields in the future.
However, unlike the conventional liquid crystal display panel, the LED display panel in which pixels are formed by LEDs drives each light emitting element with current, and is affected by voltage drop in an image consuming high current, which results in a phenomenon that the quality of the light emitting element such as heating is not achieved.
SUMMERY OF THE UTILITY MODEL
The utility model aims to provide a: aiming at the defects of the prior art, the micro LED driving device capable of improving the influence of the common impedance is provided, the common impedance can be improved, the influence on voltage drop is reduced, the area of a metal layer can be reduced, the difficulty of a production process is reduced, and the reduction of the production cost is facilitated.
In order to achieve the above purpose, the utility model adopts the following technical scheme: a micro LED drive device for improving common impedance influence comprises a pixel circuit and a pixel
The circuit-connected driving circuit comprises a pixel circuit, a light-emitting diode, a first pixel field effect transistor, a second pixel field effect transistor and a third pixel field effect transistor, wherein the light-emitting diode, the first pixel field effect transistor, the second pixel field effect transistor and the third pixel field effect transistor are connected with the pixel circuit, the pixel circuit is connected with a pixel positive power supply and a pixel negative power supply, the first pixel field effect transistor is started by the output voltage of the driving circuit, the second pixel field effect transistor is connected with the first pixel field effect transistor, the third pixel field effect transistor is started by a PWM signal, and the driving circuit comprises a driving circuit, a current source connected with the driving circuit, a first driving field effect transistor and a third driving field effect transistor
A second drive field effect transistor, the current source for providing a standard current, the first drive field effect transistor
The transistor is connected with the grid terminal of the first pixel field effect transistor, and the second driving field effect transistor is respectively connected with the grid terminal of the second pixel field effect transistor and the source head end of the first driving field effect transistor.
As an improvement of the micro led driving device for improving the common impedance influence, the first pixel field effect transistor is connected to the cathode of the light emitting diode, and the second pixel field effect transistor is connected to the first pixel field effect transistor and between the pixel negative power supplies.
As an improvement of the common impedance influence improving micro led driving device, the first driving field effect transistor is connected to the negative pole of the current source, and the second driving field effect transistor is connected between the first driving field effect transistor and the driving negative power supply.
As an improvement of the common impedance influence's micro led drive arrangement, first pixel field effect transistor with emitting diode's positive pole is connected, second pixel field effect transistor connects first pixel field effect transistor with between the pixel positive power supply.
As an improvement of the common impedance influence improving micro led driving device, the first driving field effect transistor is connected to the positive electrode of the current source, and the second driving field effect transistor is connected between the first driving field effect transistor and the driving positive power source.
As an improvement of a common impedance influence's micro led drive arrangement, first pixel field effect transistor with first drive field effect transistor is the P type, second pixel field effect transistor with second drive field effect transistor is the N type, first drive field effect transistor gate terminal with first drive field effect transistor outflow terminal short circuit.
As an improvement of the micro led driving device of the common impedance influence, the second driving field effect transistor gate terminal and the second driving field effect transistor outflow terminal are short-circuited.
As an improvement to the common impedance affected micro led driver, the second pixel fet gate terminal and the second driver fet gate terminal
Connected to a bias voltage source.
The utility model has the advantages that the utility model comprises a pixel circuit and a driving circuit connected with the pixel circuit, the pixel circuit comprises a pixel circuit, a light emitting diode, a first pixel field effect transistor, a second pixel field effect transistor and a third pixel field effect transistor which are connected with the pixel circuit, the pixel circuit is connected with a pixel positive power supply and a pixel negative power supply, the first pixel field effect transistor is opened by the output voltage of the driving circuit, the second pixel field effect transistor is connected with the first pixel field effect transistor, the third pixel field effect transistor is opened by a PWM signal, the driving circuit comprises a driving circuit, a current source connected with the driving circuit, a first driving field effect transistor and a second driving field effect transistor, the current source is used for providing standard current, the first driving field effect transistor is connected with the gate terminal of the first pixel field effect transistor, and the second driving field effect transistor is respectively connected with the gate terminal of the second pixel field effect transistor and the source end of the first driving field effect transistor. The utility model discloses can improve common impedance, reduce and to receiving the voltage drop influence, can also reduce the area of metal level, reduce production technology's the degree of difficulty, help reduction in production cost.
Drawings
Fig. 1 is a circuit diagram of a first embodiment of the present invention in a PWM driving mode; fig. 2 is a circuit diagram of a second embodiment of the present invention in the PWM driving mode; fig. 3 is a circuit diagram of a third embodiment of the present invention in the PWM driving mode; fig. 4 is a circuit diagram of a fourth embodiment of the present invention in the PWM driving mode; FIG. 5 is a graph showing the output characteristics of the FET according to the present invention under a voltage drop;
wherein: 110-pixel circuits; 111-a first pixel field effect transistor; 112-a second pixel field effect transistor; 113-a third pixel field effect transistor; 120-a drive circuit; 121-a first drive field effect transistor; 122-second drive field effect transistor.
Detailed Description
As used in the specification and in the claims, certain terms are used to refer to particular components. As one skilled in the art will appreciate, manufacturers may refer to a component by different names. This specification and the
The claims do not intend to distinguish between components that differ in name but not function
The differences serve as criteria for distinction. In the following description and in the claims, the terms "include" and "comprise" are used in an open-ended fashion, and thus should be interpreted to mean "include, but not limited to. "substantially" means within an acceptable error range, and a person skilled in the art can solve the technical problem within a certain error range to substantially achieve the technical effect.
In the description of the present invention, it is to be understood that the terms "upper", "lower", "front", "rear", "left", "right", horizontal "and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplification of description, and do not indicate or imply that the device or element referred to must have a specific orientation, be constructed and operated in a specific orientation, and thus, should not be construed as limiting the present invention.
In the present invention, unless otherwise expressly specified or limited, the terms "mounted," "connected," "secured," and the like are to be construed broadly and can include, for example, fixed connections, detachable connections, or integrally connected; can be mechanically or electrically connected; they may be connected directly or indirectly through intervening media, or they may be interconnected between two elements. The specific meaning of the above terms in the present invention can be understood according to specific situations by those skilled in the art.
The present invention will be described in further detail with reference to fig. 1 to 5, but the present invention is not limited thereto.
A micro LED driving device for improving common impedance influence comprises a pixel circuit 110 and a driving circuit 120 connected with the pixel circuit 110, wherein the pixel circuit 110 comprises a pixel circuit, a light emitting diode connected with the pixel circuit, a first pixel field effect transistor 111, a second pixel field effect transistor 112 and a third pixel field effect transistor 113, the pixel circuit is connected with a pixel positive power supply and a pixel negative power supply, the first pixel field effect transistor 111 is started by output voltage of the driving circuit 120, the second pixel field effect transistor 112 is connected with the first pixel field effect transistor 111, the third pixel field effect transistor 113 is started by a PWM signal, the driving circuit 120 comprises a driving circuit, a current source connected with the driving circuit, a first driving field effect transistor 121 and a second driving field effect transistor 121
A dynamic field effect transistor 122, a current source for providing a standard current, a first driving field effect transistor 121 and
the gate terminal of the first pixel field effect transistor 111 is connected, and the second driving field effect transistor 122 is connected to the gate terminal of the second pixel field effect transistor 112 and the source terminal of the first driving field effect transistor 121, respectively.
Preferably, the first pixel field effect transistor 111 is connected to a cathode of the light emitting diode, and the second pixel field effect transistor 112 is connected between the first pixel field effect transistor 111 and the pixel negative power supply.
Preferably, the first driving field effect transistor 121 is connected to a negative electrode of the current source, and the second driving field effect transistor 122 is connected between the first driving field effect transistor 121 and the driving negative power source.
Preferably, the first pixel field effect transistor 111 is connected to the anode of the light emitting diode, and the second pixel field effect transistor 112 is connected between the first pixel field effect transistor 111 and the pixel positive power supply.
Preferably, the first driving field effect transistor 121 is connected to the positive electrode of the current source, and the second driving field effect transistor 122 is connected between the first driving field effect transistor 121 and the driving positive power source.
Preferably, the first pixel field effect transistor 111 and the first driving field effect transistor 121 are both of a P type, the second pixel field effect transistor 112 and the second driving field effect transistor 122 are both of an N type, and the gate terminal of the first driving field effect transistor 121 and the outflow terminal of the first driving field effect transistor 121 are short-circuited.
Preferably, the gate terminal of the second driving field effect transistor 122 and the drain terminal of the second driving field effect transistor 122 are short-circuited.
Preferably, the second pixel field effect transistor 112 gate terminal and the second drive field effect transistor 122 gate terminal are connected to a bias voltage source.
Preferably, the LED driving apparatus further includes a buffer channel connected between the gate terminal of the second pixel field effect transistor 112 and the gate terminal of the second driving field effect transistor 122.
The LED driving apparatus may be classified into a PWM driving method and a voltage driving method. Fig. 1 to 4 show an embodiment of the PWM driving method, which is characterized in that the circuit is configured to include a combination of N or P in order to avoid connecting a positive power supply or a negative power supply to the source terminal of the field effect transistor. By this method, the common impedance influence can be removed in the positive power supply or the negative power supply.
Referring to fig. 1 to 4, the LED driving apparatus includes a portion electrically connected to a plurality of pixel circuits 110
And a driver circuit 120 portion of the majority of the pixel circuits 110. The majority of the pixel circuits 110 may be combined
To a common power supply.
The pixel circuit 110 may include a light emitting diode, a first pixel FET 111, a second pixel FET 112, and a third pixel FET 113. The utility model discloses will connect the electric connection name between pixel positive power supply Vcc _ P and the pixel negative power supply GND _ P "pixel circuit".
The light emitting diodes may be directly connected to the pixel lines. On the drawings, as an example of a light emitting diode, generally, an LED having a width of 1 to 100 micrometers is called a micro LED. Therefore, although the name is different from the ordinary LED with a width of 100 μm, the present invention does not limit the LED to be a micro LED. The light emitting diode can be replaced by a common LED, a micro LED and an OLED.
The first pixel fet 111 is connected directly to the pixel line and can be turned on by the voltage output from the driver circuit 120. In the present invention, the field effect transistor is directly connected, which means that the source terminal of the field effect transistor and the output terminal of the field effect transistor are connected to the line.
The second pixel FET 112 is connected directly to the pixel line and is connectable to the first pixel FET
The third pixel FET 113 is connected directly to the pixel line and can be turned on by the PWM signal PWM-CTRL.
The driving circuit 120 may include a current source Iref, a first driving field effect transistor 121 and a second driving field effect transistor 122. In the present invention, the electrical connection between the driving positive power supply Vcc _ D and the driving negative power supply GND _ D is named "driving line".
Current source Iref is coupled directly to the drive line and can supply a standard current. The standard current may be set to a current that allows the light emitting diode to sufficiently emit light.
The first driving FET 121 is directly connected to the driving circuit and can be connected to the first pixel FET
The gate terminal of the transistor 111 is connected.
A second driving FET 122 directly connected to the driving line and a second pixel FET
112 gate terminal, and may be connected to the source terminal of the first driving field effect transistor 121.
According to an embodiment of the present invention, the first pixel field effect transistor 111 and the light emitting diode
The cathode of the tube micro LED is connected, and the second pixel field effect transistor 112 may be connected between the first pixel field effect transistor 111 and the pixel negative power source GND _ P.
At this time, the first driving field effect transistor 121 is connected to the negative electrode of the current source Iref, and the second driving field effect transistor 122 may be connected between the first driving field effect transistor 121 and the driving negative power source GND _ D.
According to another embodiment of the present invention, the first pixel field effect transistor 111 is connected to the anode of the light emitting diode micro LED, the second pixel field effect transistor 112 is connected between the first pixel field effect transistor 111 and the pixel positive power supply Vcc _ P, and meanwhile, the first driving field effect transistor 121 is connected to the anode of the current source Iref, and the second driving field effect transistor 122 is connected between the first driving field effect transistor 121 and the driving positive power supply Vcc _ D.
Further, as in the embodiments of fig. 1 to 4, the first pixel field effect transistor 111 and the first drive field
The effect transistor 121 is of P-type, the second pixel field effect transistor 112 and the second drive field effect transistor
The tube 122 is of the N-type. At this time, the first driving field effect transistor 121 gate terminal and the first driving field effect transistor
The transistor 121 outflow terminal may be short-circuited.
According to an embodiment of the present invention, the second driving FET 122 gate terminal and the second driving FET
The outgoing terminals of the two driving fets 122 may be shorted.
According to another embodiment of the present invention, the second pixel FET 112 gate terminal and the second pixel FET
The gate terminals of the two driving fets 122 may be connected to a bias source.
In addition, the LED driving apparatus according to the present invention may include a buffer channel connected between the gate terminal of the first pixel field effect transistor 111 and the gate terminal of the first driving field effect transistor 121.
According to the prior art LED pixel circuit, a voltage drop occurs when a common impedance generated by the negative power supply GND _ P flows up. Therefore, the field effect transistor connected to the light emitting element reduces the effective voltage.
Referring to fig. 5, as the Vgs effective voltage decreases, the output current decreases simultaneously in the saturation state. In contrast, according to the LED driving apparatus of the present invention, even if the voltage of the negative power supply GND _ P drops,
only the voltage at the output of the second pixel FET 112 is affected, not the first pixel FET
Vgs of the tube 111 can minimize the influence of the output current flowing in the pixel line.
A display device for improving the influence of common impedance comprises the LED driving device. Those skilled in the art to which the invention pertains will also be able to practice the invention in light of the foregoing disclosure and teachings
Variations and modifications may be made to the above-described embodiments. Therefore, the present invention is not limited to the above-mentioned embodiments, and any obvious modifications, replacements or variations made by those skilled in the art on the basis of the present invention belong to the protection scope of the present invention. Furthermore, although specific terms are employed herein, they are used in a generic and descriptive sense only and not for purposes of limitation.
Claims (9)
1. The utility model provides a improve micro LED drive arrangement of common impedance influence which characterized in that: including pixel electrodes
A circuit (110) and a driving circuit (120) connected to the pixel circuit (110), wherein the pixel circuit (110) comprises a pixel line, a light emitting diode connected to the pixel line, a first pixel field effect transistor (111), a second pixel field effect transistor (112) and a third pixel field effect transistor (113), the pixel line is connected to a pixel positive power supply and a pixel negative power supply, the first pixel field effect transistor (111) is turned on by an output voltage of the driving circuit (120), the second pixel field effect transistor (112) is connected to the first pixel field effect transistor (111), the third pixel field effect transistor (113) is turned on by a PWM signal, the driving circuit (120) comprises a driving line, a current source connected to the driving line, a first driving field effect transistor (121) and a second driving field effect transistor (122), the current source is used for providing standard current, the first driving field effect transistor (121) is connected with the gate terminal of the first pixel field effect transistor (111), and the second driving field effect transistor (122) is respectively connected with the gate terminal of the second pixel field effect transistor (112) and the source terminal of the first driving field effect transistor (121).
2. A micro led driver apparatus for improving common impedance influence as recited in claim 1, wherein: the first pixel field effect transistor (111) is connected to a cathode of the light emitting diode, and the second pixel field effect transistor (112) is connected between the first pixel field effect transistor (111) and the pixel negative power supply.
3. A micro led driving apparatus for improving common impedance influence as claimed in claim 2, wherein: the first drive field effect transistor (121) is connected to the negative pole of the current source, and the second drive field effect transistor (122) is connected between the first drive field effect transistor (121) and a drive negative power supply.
4. A micro led driver apparatus for improving common impedance influence as recited in claim 1, wherein: the first pixel field effect transistor (111) is connected to the anode of the light emitting diode, and the second pixel field effect transistor (112) is connected to the first pixel field effect transistor (111) and the pixel
And a positive power supply.
5. A MicroLED driver apparatus for ameliorating the effects of common impedance as recited in claim 4, wherein: the first drive field effect transistor (121) is connected to the positive electrode of the current source, and the second drive field effect transistor (122) is connected between the first drive field effect transistor (121) and a drive positive power supply.
6. A micro led driver apparatus for improving common impedance influence as recited in claim 1, wherein: the first pixel field effect transistor (111) and the first driving field effect transistor (121) are both of a P type, the second pixel field effect transistor (112) and the second driving field effect transistor (122) are both of an N type, and a gate terminal of the first driving field effect transistor (121) and an outflow terminal of the first driving field effect transistor (121) are short-circuited.
7. A MicroLED driver apparatus for ameliorating the effects of common impedance as recited in claim 6, wherein: the second drive field effect transistor (122) gate terminal and the second drive field effect transistor (122) drain terminal are shorted.
8. A MicroLED driver apparatus for ameliorating the effects of common impedance as recited in claim 6, wherein: the second pixel field effect transistor (112) gate terminal and the second drive field effect transistor (122) gate terminal are connected to a bias voltage source.
9. A MicroLED driver apparatus for ameliorating the effects of common impedance as recited in claim 6, wherein: the LED driving arrangement further comprises a buffer channel connected between the second pixel field effect transistor (112) gate terminal and the second driving field effect transistor (122) gate terminal.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921661294.7U CN210575033U (en) | 2019-10-07 | 2019-10-07 | Improve micro LED drive arrangement of common impedance influence |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921661294.7U CN210575033U (en) | 2019-10-07 | 2019-10-07 | Improve micro LED drive arrangement of common impedance influence |
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| Publication Number | Publication Date |
|---|---|
| CN210575033U true CN210575033U (en) | 2020-05-19 |
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201921661294.7U Expired - Fee Related CN210575033U (en) | 2019-10-07 | 2019-10-07 | Improve micro LED drive arrangement of common impedance influence |
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|---|---|
| CN (1) | CN210575033U (en) |
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2019
- 2019-10-07 CN CN201921661294.7U patent/CN210575033U/en not_active Expired - Fee Related
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20210406 Address after: 210000 B-5, 69 Shuangfeng Road, Pukou Economic Development Zone, Pukou District, Nanjing City, Jiangsu Province Patentee after: Yuchuang semiconductor (Nanjing) Co.,Ltd. Address before: 510700 Room 303, office area, No.23 Jinzhong Road, Huangpu District, Dongguan City, Guangdong Province Patentee before: Yuchuang semiconductor (Guangzhou) Co.,Ltd. |
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| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20200519 |