CN110503916A - A kind of LED drive device and display device improving common impedance influences - Google Patents
A kind of LED drive device and display device improving common impedance influences Download PDFInfo
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- CN110503916A CN110503916A CN201910946859.4A CN201910946859A CN110503916A CN 110503916 A CN110503916 A CN 110503916A CN 201910946859 A CN201910946859 A CN 201910946859A CN 110503916 A CN110503916 A CN 110503916A
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- field effect
- effect transistor
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- G—PHYSICS
- G09—EDUCATION; CRYPTOGRAPHY; DISPLAY; ADVERTISING; SEALS
- G09G—ARRANGEMENTS OR CIRCUITS FOR CONTROL OF INDICATING DEVICES USING STATIC MEANS TO PRESENT VARIABLE INFORMATION
- G09G3/00—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes
- G09G3/20—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters
- G09G3/22—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources
- G09G3/30—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels
- G09G3/32—Control arrangements or circuits, of interest only in connection with visual indicators other than cathode-ray tubes for presentation of an assembly of a number of characters, e.g. a page, by composing the assembly by combination of individual elements arranged in a matrix no fixed position being assigned to or needed to be assigned to the individual characters or partial characters using controlled light sources using electroluminescent panels semiconductive, e.g. using light-emitting diodes [LED]
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- Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- General Physics & Mathematics (AREA)
- Theoretical Computer Science (AREA)
- Control Of El Displays (AREA)
- Control Of Indicators Other Than Cathode Ray Tubes (AREA)
Abstract
The invention discloses a kind of LED drive devices for improving common impedance influences, including pixel circuit and the driving circuit being connect with pixel circuit, pixel circuit includes pixel route, with the light emitting diode of pixel connection, first pixel field effect transistor, second pixel field effect transistor and third pixel field effect transistor, pixel route is connected with pixel positive supply and pixel negative supply, first pixel field effect transistor is opened by driving circuit output voltage, second pixel field effect transistor is connected to the first pixel field effect transistor, third pixel field effect transistor is opened by pwm signal, driving circuit includes driver circuit, the current source being connect with driver circuit, first driving field effect transistor and the second driving field effect transistor, current source is for providing normalized current.The present invention can improve common impedance, moreover it is possible to which the area for reducing metal layer helps to reduce production cost.In addition, the invention also discloses a kind of display devices.
Description
Technical field
The invention belongs to the technical fields of LED, and in particular to a kind of LED drive device for improving common impedance influences and aobvious
Showing device.
Background technique
Nowadays, can self-luminescence light emitting diode or Organic Light Emitting Diode be widely used at present on multiple product,
By taking the outstanding LED of durability and luminous efficiency as an example, miniaturization the relevant technologies are being rapidly developed, it is contemplated that from now in many applications
Field will replace existing display screen.
It is but different from existing liquid crystal display, the LED display of pixel is embodied with LED, drives each hair with electric current
Optical element is influenced by voltage decline in the image of consumption high current, the quality such as the thermalization of light-emitting component is caused to be not achieved
The phenomenon that.
Summary of the invention
It is an object of the present invention to: in view of the deficiencies of the prior art, provide a kind of LED for improving common impedance influences
Driving device, can improve common impedance, and reduction is influenced on by voltage decline, moreover it is possible to reduce the area of metal layer, reduce production
The difficulty of technique helps to reduce production cost.
To achieve the goals above, the present invention adopts the following technical scheme:
A kind of LED drive device improving common impedance influences, including pixel circuit and the driving being connect with the pixel circuit
Circuit, the pixel circuit include the light emitting diode of pixel route and the pixel connection, the first pixel field-effect crystalline substance
Body pipe, the second pixel field effect transistor and third pixel field effect transistor, the pixel route are connected with pixel positive supply
With pixel negative supply, the first pixel field effect transistor is opened by the driving circuit output voltage, second pixel
Field effect transistor is connected to the first pixel field effect transistor, and the third pixel field effect transistor is by pwm signal
It opens, the driving circuit includes driver circuit, the current source connecting with the driver circuit, the first driving field effect transistor
And the second driving field effect transistor, the current source for providing normalized current, the first pixel field effect transistor with
First pixel field effect transistor gate terminal connection, the second driving field effect transistor respectively with second pixel
Field effect transistor gate terminal and the first driving field effect transistor source end connection.
As a kind of a kind of improvement for the LED drive device for improving common impedance influences of the present invention, described first
Pixel field effect transistor is connect with the cathode of the light emitting diode, and the second pixel field effect transistor is connected to described
Between first pixel field effect transistor and the pixel negative supply.
As a kind of a kind of improvement for the LED drive device for improving common impedance influences of the present invention, described first
Driving field effect transistor is connect with the cathode of the current source, and the second driving field effect transistor is connected to described first
It drives between field effect transistor and the driving negative supply.
As a kind of a kind of improvement for the LED drive device for improving common impedance influences of the present invention, described first
Pixel field effect transistor is connect with the anode of the light emitting diode, and the second pixel field effect transistor is connected to described
Between first pixel field effect transistor and the pixel positive supply.
As a kind of a kind of improvement for the LED drive device for improving common impedance influences of the present invention, described first
The anode of driving field effect transistor and the current source is connect, and described second to drive field effect transistor be to be connected to described the
Between one driving field effect transistor and the driving positive supply.
As a kind of a kind of improvement for the LED drive device for improving common impedance influences of the present invention, described first
Pixel field effect transistor and the first driving field effect transistor are P type, the second pixel field effect transistor
It is N type with the second driving field effect transistor, the first driving field effect transistor gate terminal and described first
Drive the son short circuit of field effect transistor outflow end.
As a kind of a kind of improvement for the LED drive device for improving common impedance influences of the present invention, described second
Drive field effect transistor gate terminal and the second driving field effect transistor outflow end short circuit.
As a kind of a kind of improvement for the LED drive device for improving common impedance influences of the present invention, described second
Pixel field effect transistor gate terminal and the second driving field effect transistor gate terminal are connected to biasing voltage source.
The second object of the present invention is to provide a kind of display device, including above-mentioned LED drive device.
The beneficial effects of the present invention are the present invention includes pixel circuit and the driving connecting with pixel circuit electricity
Road, the pixel circuit include pixel route, light emitting diode, the first pixel field effect transistor with the pixel connection
Pipe, the second pixel field effect transistor and third pixel field effect transistor, the pixel route be connected with pixel positive supply and
Pixel negative supply, the first pixel field effect transistor are opened by the driving circuit output voltage, second pixel, field
Effect transistor is connected to the first pixel field effect transistor, and the third pixel field effect transistor is opened by pwm signal
Open, the driving circuit include driver circuit, the current source being connect with the driver circuit, first driving field effect transistor and
Second driving field effect transistor, the current source is for providing normalized current, the first pixel field effect transistor and institute
State the first pixel field effect transistor gate terminal connection, it is described second driving field effect transistor respectively with second pixel, field
Effect transistor gate terminal and the first driving field effect transistor source end connection.The present invention can improve common impedance, reduce
It is influenced on by voltage decline, moreover it is possible to which the area for reducing metal layer reduces the difficulty of production technology, helps to reduce production cost.
Detailed description of the invention
Fig. 1 is the circuit diagram of first embodiment of the present invention under PWM driving method；
Fig. 2 is the circuit diagram of second embodiment of the present invention under PWM driving method；
Fig. 3 is the circuit diagram of 3rd embodiment of the present invention under PWM driving method；
Fig. 4 is the circuit diagram of fourth embodiment of the present invention under PWM driving method；
Fig. 5 falls by force field effect transistor output characteristic curve in voltage for the present invention；
Wherein: 110- pixel circuit；111- the first pixel field effect transistor；112- the second pixel field effect transistor；113-
Third pixel field effect transistor；120- driving circuit；121- first drives field effect transistor；122- second drives field-effect
Transistor.
Specific embodiment
As used some vocabulary to censure specific components in the specification and claims.Those skilled in the art answer
It is understood that hardware manufacturer may call the same component with different nouns.This specification and claims are not with name
The difference of title is as the mode for distinguishing component, but with the difference of component functionally as the criterion of differentiation.Such as logical
The "comprising" of piece specification and claim mentioned in is an open language, therefore should be construed to " include but do not limit
In "." substantially " refer within an acceptable error range, those skilled in the art can solve technology within a certain error range
Problem basically reaches technical effect.
In the description of the present invention, it is to be understood that, term " on ", "lower", "front", "rear", "left", "right", level "
The orientation or positional relationship of equal instructions is to be based on the orientation or positional relationship shown in the drawings, be merely for convenience of the description present invention and
Simplify description, rather than the device or element of indication or suggestion meaning must have a particular orientation, with specific orientation construction
And operation, therefore be not considered as limiting the invention.
In invention unless specifically defined or limited otherwise, the arts such as term " installation ", " connected ", " connection ", " fixation "
Language shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or be integrally connected；It can be machine
Tool connection, is also possible to be electrically connected；It can be directly connected, two members can also be can be indirectly connected through an intermediary
Connection inside part.For the ordinary skill in the art, above-mentioned term can be understood in this hair as the case may be
Concrete meaning in bright.
Below in conjunction with attached drawing 1 ~ 5, invention is further described in detail, but not as a limitation of the invention.
A kind of LED drive device improving common impedance influences, including pixel circuit 110 and connect with pixel circuit 110
Driving circuit 120, pixel circuit 110 includes pixel route, imitates with the light emitting diode of pixel connection, the first pixel, field
Transistor 111, the second pixel field effect transistor 112 and third pixel field effect transistor 113 are answered, pixel route is connected with picture
Plain positive supply and pixel negative supply, the first pixel field effect transistor 111 are opened by 120 output voltage of driving circuit, the second picture
Plain field effect transistor 112 is connected to the first pixel field effect transistor 111, and third pixel field effect transistor 113 is believed by PWM
Number open, driving circuit 120 include driver circuit, connect with driver circuit current source, first drive field effect transistor 121
And the second driving field effect transistor 122, current source is for providing normalized current, the first pixel field effect transistor 111 and the
The connection of one pixel field effect transistor, 111 gate terminal, the second driving field effect transistor 122 are brilliant with the second pixel field-effect respectively
112 gate terminal of body pipe and the first driving 121 source end of field effect transistor connection.
Preferably, the first pixel field effect transistor 111 is connect with the cathode of light emitting diode, and the second pixel field-effect is brilliant
Body pipe 112 is connected between the first pixel field effect transistor 111 and pixel negative supply.
Preferably, the first driving field effect transistor 121 is connect with the cathode of current source, the second driving field effect transistor
122 are connected between the first driving field effect transistor 121 and driving negative supply.
Preferably, the first pixel field effect transistor 111 is connect with the anode of light emitting diode, and the second pixel field-effect is brilliant
Body pipe 112 is connected between the first pixel field effect transistor 111 and pixel positive supply.
Preferably, the first driving field effect transistor 121 is connect with the anode of current source, the second driving field effect transistor
122 are connected between the first driving field effect transistor 121 and driving positive supply.
Preferably, the first pixel field effect transistor 111 and the first driving field effect transistor 121 are P type, and second
Pixel field effect transistor 112 and the second driving field effect transistor 122 are N type, the first driving field effect transistor 121
Gate terminal and the first driving field effect transistor 121 flow out the short-circuit of terminals.
Preferably, the second driving 122 gate terminal of field effect transistor and the second driving field effect transistor 122 flow out terminal
Short circuit.
Preferably, 112 gate terminal of the second pixel field effect transistor and the second driving 122 gate terminal of field effect transistor connect
It is connected to biasing voltage source.
Preferably, LED drive device further includes buffer channel, and buffer channel is connected to the second pixel field effect transistor
Between 112 gate terminals and the second driving 122 gate terminal of field effect transistor.
LED drive device can be divided into PWM driving method and voltage driving mode.Fig. 1 to Fig. 4 is that PWM driving method is implemented
Example, the characteristics of this mode, are, in the composition of circuit, in order to avoid allowing the source of positive supply or negative supply and field effect transistor
Head end connection, is combined by N or P group.By this method, common impedance influences can be removed in positive supply or negative supply.
Referring to Fig. 1 to Fig. 4, LED drive device, including electric are connected to most 110 parts of pixel circuit and most pictures
120 part of driving circuit of plain 110 part of circuit.Most 110 parts of pixel circuit can be parallel to common power supply source.
110 part of pixel circuit can contain light emitting diode, the first pixel field effect transistor 111, the second pixel, field effect
Answer transistor 112 and third pixel field effect transistor 113.The present invention will connect pixel positive supply Vcc_P and pixel negative supply
Electrical connection between GND_P is named as " pixel route ".
Light emitting diode can direct connection to pixel route.It is general next as an example of light emitting diode on drawing
It says, wide 1 to 100 micron of LED is referred to as miniature LED.Therefore, although common LED phase of this title with width at 100 microns
Difference, but it is miniature LED that the present invention, which is not intended to limit light emitting diode,.Light emitting diode can be by common LED, miniature LED and OLED
Instead of.
First pixel field effect transistor, 111 direct connection, can be by the electricity that exports on 120 part of driving circuit to pixel line road
Pressure is realized " opening ".In the present invention, field effect transistor direct connection, it is meant that field effect transistor source terminal and field-effect are brilliant
The output terminal of body pipe is connected on route.
Second pixel field effect transistor, 112 direct connection may be connected to the first pixel field effect transistor to pixel line road
111 source ends.
113 direct connection of third pixel field effect transistor can be opened to pixel line road by pwm signal PWM-CTRL.
120 part of driving circuit may include current source Iref, the first driving field effect transistor 121 and the second driving field effect
Answer transistor 122.In the present invention, the electrical connection between connection driving positive supply Vcc_D and driving negative supply GND_D is ordered
Entitled " driver circuit ".
On current source Iref direct connection to driver circuit, normalized current can be supplied.Normalized current may be set to make light-emitting diodes
The luminous electric current of pipe abundance.
On first driving 121 direct connection to driver circuit of field effect transistor, and can be with the first pixel field effect transistor 111
Gate terminal connection.
On second driving 122 direct connection to driver circuit of field effect transistor, with 112 grid end of the second pixel field effect transistor
Son connection, and can be with the first driving 121 source end of field effect transistor.
Sub according to one embodiment of present invention, the first pixel field effect transistor 111 and miniature LED of light emitting diode is negative
Pole connection, the second pixel field effect transistor 112 may be connected to the first pixel field effect transistor 111 and pixel negative supply GND_
Between P.
At this moment, the first driving field effect transistor 121 is connected to the cathode of current source Iref, the second driving field effect transistor
Pipe 122 may be connected between the first driving field effect transistor 121 and driving negative supply GND_D.
Other embodiment according to the present invention, it is miniature that the first pixel field effect transistor 111 is connected to light emitting diode
The anode of LED, the second pixel field effect transistor 112 may be connected to the first pixel field effect transistor 111 and pixel positive supply
Between Vcc_P, meanwhile, the first driving field effect transistor 121 is connected to the anode of current source Iref, and the second driving field-effect is brilliant
Body pipe 122 may be connected between the first driving field effect transistor 121 and driving positive supply Vcc_D.
In addition, embodiment as shown in Figure 1 to Figure 4, the first pixel field effect transistor 111 and the first driving field effect transistor
121 be P- type, and the second pixel field effect transistor 112 and the second driving field effect transistor 122 are N- type.At this moment,
One driving 121 gate terminal of field effect transistor and the first driving field effect transistor 121 flow out terminal may short circuit.
It is sub according to one embodiment of present invention, the second driving 122 gate terminal of field effect transistor and the second driving field effect
Answering transistor 122 to flow out terminal may short circuit.
Other embodiment according to the present invention, 112 gate terminal of the second pixel field effect transistor and the second driving field effect
122 gate terminal of transistor is answered to may be connected to bias generator.
In addition, LED drive device according to the present invention may include 111 gate terminal of the first pixel field effect transistor and first
The buffer channel connected between driving 121 gate terminal of field effect transistor.
According to the LED pixel circuit of original technology, negative supply GND_P generate common impedance upstream electric current when generate voltage
Decline.Therefore, the field effect transistor being connected to the light emitting element reduces effective voltage.
Referring to Fig. 5, as Vgs effective voltage is reduced, under saturation state, output electric current is reduced simultaneously.
On the contrary, LED drive device according to the present invention only influences the second picture even if voltage decline occurs for negative supply GND_P
The voltage of plain 112 output end of field effect transistor, does not influence the Vgs of the first pixel field effect transistor 111, and circulation can be made to exist
The influence of the output electric current of pixel route minimizes.
A kind of display device improving common impedance influences, including above-mentioned LED drive device.
According to the disclosure and teachings of the above specification, those skilled in the art in the invention can also be to above-mentioned embodiment party
Formula is changed and is modified.Therefore, the invention is not limited to above-mentioned specific embodiment, all those skilled in the art exist
Made any conspicuous improvement, replacement or modification all belong to the scope of protection of the present invention on the basis of the present invention.This
Outside, although using some specific terms in this specification, these terms are merely for convenience of description, not to the present invention
Constitute any restrictions.
Claims (10)
1. a kind of LED drive device for improving common impedance influences, it is characterised in that: including pixel circuit (110) and with it is described
The driving circuit (120) of pixel circuit (110) connection, the pixel circuit (110) include pixel route and the pixel route
The light emitting diode of connection, the first pixel field effect transistor (111), the second pixel field effect transistor (112) and third picture
Plain field effect transistor (113), the pixel route are connected with pixel positive supply and pixel negative supply, the first pixel, field effect
Transistor (111) is answered to be opened by the driving circuit (120) output voltage, the second pixel field effect transistor (112) is even
It is connected to the first pixel field effect transistor (111), the third pixel field effect transistor (113) is opened by pwm signal,
The driving circuit (120) includes driver circuit, the current source connecting with the driver circuit, the first driving field effect transistor
(121) and the second driving field effect transistor (122), the current source are imitated for providing normalized current, first pixel, field
Transistor (111) is answered to connect with the first pixel field effect transistor (111) gate terminal, the second driving field effect transistor
It manages (122) and drives field effect transistor (121) source with the second pixel field effect transistor (112) gate terminal and first respectively
Head end connection.
2. a kind of LED drive device for improving common impedance influences as described in claim 1, it is characterised in that: described first
Pixel field effect transistor (111) is connect with the cathode of the light emitting diode, the second pixel field effect transistor (112)
It is connected between the first pixel field effect transistor (111) and the pixel negative supply.
3. a kind of LED drive device for improving common impedance influences as claimed in claim 2, it is characterised in that: described first
Driving field effect transistor (121) is connect with the cathode of the current source, the second driving field effect transistor (122) connection
Between first driving field effect transistor (121) and the driving negative supply.
4. a kind of LED drive device for improving common impedance influences as described in claim 1, it is characterised in that: described first
Pixel field effect transistor (111) is connect with the anode of the light emitting diode, the second pixel field effect transistor (112)
It is connected between the first pixel field effect transistor (111) and the pixel positive supply.
5. a kind of LED drive device for improving common impedance influences as claimed in claim 4, it is characterised in that: described first
Driving field effect transistor (121) is connect with the anode of the current source, and second driving field effect transistor (122) is to connect
It connects between first driving field effect transistor (121) and the driving positive supply.
6. a kind of LED drive device for improving common impedance influences as described in claim 1, it is characterised in that: described first
Pixel field effect transistor (111) and first driving field effect transistor (121) are P type, second pixel, field
Effect transistor (112) and second driving field effect transistor (122) are N type, and the first driving field-effect is brilliant
The short-circuit of terminals is flowed out in body pipe (121) gate terminal and first driving field effect transistor (121).
7. a kind of LED drive device for improving common impedance influences as claimed in claim 6, it is characterised in that: described second
Field effect transistor (122) gate terminal and second driving field effect transistor (122) is driven to flow out the short-circuit of terminals.
8. a kind of LED drive device for improving common impedance influences as claimed in claim 6, it is characterised in that: described second
Pixel field effect transistor (112) gate terminal and described second driving field effect transistor (122) gate terminal are connected to bias plasma
Potential source.
9. a kind of LED drive device for improving common impedance influences as claimed in claim 6, it is characterised in that: the LED drives
Dynamic device further includes buffer channel, the buffer channel be connected to the second pixel field effect transistor (112) gate terminal and
Between described second driving field effect transistor (122) gate terminal.
10. a kind of display device, it is characterised in that: including the described in any item LED drive devices of claim 1 ~ 9.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910946859.4A CN110503916A (en) | 2019-10-07 | 2019-10-07 | A kind of LED drive device and display device improving common impedance influences |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201910946859.4A CN110503916A (en) | 2019-10-07 | 2019-10-07 | A kind of LED drive device and display device improving common impedance influences |
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| Publication Number | Publication Date |
|---|---|
| CN110503916A true CN110503916A (en) | 2019-11-26 |
Family
ID=68593163
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| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201910946859.4A Withdrawn CN110503916A (en) | 2019-10-07 | 2019-10-07 | A kind of LED drive device and display device improving common impedance influences |
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| Country | Link |
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| CN (1) | CN110503916A (en) |
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111063297A (en) * | 2020-02-22 | 2020-04-24 | 禹创半导体(广州)有限公司 | Miniature micro LED display device |
| CN111128072A (en) * | 2020-02-22 | 2020-05-08 | 禹创半导体(广州)有限公司 | Micro LED display device using low-voltage transistor |
| CN111968566A (en) * | 2020-08-27 | 2020-11-20 | 上海天马微电子有限公司 | Light-emitting panel, driving method and manufacturing method thereof and display device |
-
2019
- 2019-10-07 CN CN201910946859.4A patent/CN110503916A/en not_active Withdrawn
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111063297A (en) * | 2020-02-22 | 2020-04-24 | 禹创半导体(广州)有限公司 | Miniature micro LED display device |
| CN111128072A (en) * | 2020-02-22 | 2020-05-08 | 禹创半导体(广州)有限公司 | Micro LED display device using low-voltage transistor |
| CN111968566A (en) * | 2020-08-27 | 2020-11-20 | 上海天马微电子有限公司 | Light-emitting panel, driving method and manufacturing method thereof and display device |
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Effective date of registration: 20210309 Address after: 210000 B-5, 69 Shuangfeng Road, Pukou Economic Development Zone, Pukou District, Nanjing City, Jiangsu Province Applicant after: Yuchuang semiconductor (Nanjing) Co.,Ltd. Address before: 510700 Room 303, office area, No.23 Jinzhong Road, Huangpu District, Guangzhou City, Guangdong Province Applicant before: Yuchuang semiconductor (Guangzhou) Co.,Ltd. |
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Application publication date: 20191126 |