CN210516955U

CN210516955U - Power divider

Info

Publication number: CN210516955U
Application number: CN201921318514.6U
Authority: CN
Inventors: 张开宁; 崔立成; 彭茂; 邓达; 杨磊
Original assignee: Suzhou Zibo Electronic Technology Co ltd
Current assignee: Suzhou Zibo Electronic Technology Co ltd
Priority date: 2019-08-14
Filing date: 2019-08-14
Publication date: 2020-05-12
Anticipated expiration: 2029-08-14

Abstract

The utility model discloses a ware is divided to merit. The power divider comprises: the metal-plated multilayer structure comprises a substrate, a first metal layer and a second metal layer which are respectively positioned on two surfaces of the substrate which are oppositely arranged, and a plurality of metalized through holes which penetrate through the substrate, the first metal layer and the second metal layer; the metallized through holes form an input port, a first output port, a second output port and a groove structure on the substrate; the input port comprises a first via array and a second via array formed by a plurality of metalized vias; the first output port comprises a third through hole array and a fourth through hole array formed by a plurality of metalized through holes; the second output port comprises a fifth via array and a sixth via array formed by a plurality of metalized vias; the groove structure is located between the fourth through hole array and the sixth through hole array, and the groove structure is sunken towards the direction of the input port. The utility model provides a ware is divided to merit, the size is little, the work bandwidth is wideer.

Description

Power divider

Technical Field

The embodiment of the utility model provides a relate to wireless communication technical field, especially relate to a ware is divided to merit.

Background

The H-T power divider plays a very important role in the design of microwave circuits and is widely applied to impedance measurement, and sum and difference networks required by duplexers and radar systems.

The traditional waveguide H-T power divider is manufactured by a rectangular waveguide tube and has the defects of large size, narrow working bandwidth and the like.

SUMMERY OF THE UTILITY MODEL

The utility model provides a ware is divided to merit to realize that the size is little, work bandwidth is big divides the ware.

The embodiment of the utility model provides a ware is divided to merit, include:

the metal-plated multilayer structure comprises a substrate, a first metal layer and a second metal layer which are respectively positioned on two surfaces of the substrate which are oppositely arranged, and a plurality of metalized through holes which penetrate through the substrate, the first metal layer and the second metal layer;

the metallized through hole forms an input port, a first output port, a second output port and a groove structure on the substrate; the input port comprises a first via array and a second via array formed by a plurality of the metalized vias; the first output port comprises a third through hole array and a fourth through hole array formed by a plurality of the metalized through holes; the second output port comprises a fifth via array and a sixth via array formed by a plurality of the metalized vias; the groove structure is located between the fourth through hole array and the sixth through hole array, and the groove structure is sunken towards the direction of the input port.

Optionally, the first through hole array and the third through hole array form an "L" -shaped structure;

the second through hole array and the fifth through hole array form an L-shaped structure;

the extending directions of the fourth through hole array and the sixth through hole array are positioned on the same straight line.

Optionally, in the first direction, the opening length of the input port is L1;

in a second direction, the opening length of the first output port is L2, and the opening length of the second output port is L3, where L1 is L2 is L3;

the first direction is perpendicular to the extending direction of the first through hole array, and the second direction is parallel to the extending direction of the first through hole array.

Optionally, the metalized vias include a first metalized via and a second metalized via, where the first metalized via forms the groove structure, and the second metalized via forms the input port, the first output port, and the second output port;

the diameter of the first metalized through hole is R1, the distance between every two adjacent first metalized through holes is D1, the diameter of the second metalized through hole is R2, the distance between every two adjacent second metalized through holes is D2, wherein R1 is less than R2, and D1 is less than D2.

Optionally, the groove structure is a wedge-shaped structure.

Optionally, the position of the center line of the groove structure is located on the same straight line with the center line of the input port.

Optionally, the power divider further includes a first inductive diaphragm and a second inductive diaphragm;

the first inductive diaphragm is positioned on one side of the first through hole array close to the second through hole array;

the second sensitive membrane is positioned on one side of the second through hole array close to the first through hole array, and a connecting line between the first sensitive membrane and the second sensitive membrane is vertical to the extending direction of the first through hole array.

Optionally, along the first direction, the extension length of the first inductive diaphragm is the same as the extension length of the second inductive diaphragm; wherein the first direction is perpendicular to an extending direction of the first via array.

Optionally, the first inductive diaphragm and the second inductive diaphragm are made of copper.

Optionally, the substrate is made of teflon and/or ceramic.

The embodiment of the utility model provides a technical scheme forms input port, first output port, second output port and groove structure on the substrate through a plurality of metallized through-holes that run through substrate, first metal level and second metal level. The power divider is manufactured by a Substrate Integrated Waveguide (SIW) plane integrated waveguide technology, and meanwhile, the advantages of the traditional metal waveguide and a microstrip circuit are integrated, so that the power divider has the advantages of high Q value, high power capacity, wide working bandwidth, small size, easiness in integration and the like, and the technical problems of large size, narrow working bandwidth and the like of the power divider in the prior art are solved.

Drawings

Fig. 1 is a schematic side view of a power divider according to an embodiment of the present invention;

fig. 2 is a schematic top view of a power divider according to an embodiment of the present invention;

fig. 3 is a schematic structural diagram of a groove structure according to an embodiment of the present invention;

fig. 4 is a schematic structural diagram of another power divider according to an embodiment of the present invention.

Detailed Description

The present invention will be described in further detail with reference to the accompanying drawings and examples. It is to be understood that the specific embodiments described herein are merely illustrative of the invention and are not limiting of the invention. It should be further noted that, for the convenience of description, only some of the structures related to the present invention are shown in the drawings, not all of the structures.

Fig. 1 is the embodiment of the utility model provides a side view structure schematic diagram of ware is divided to merit, fig. 2 is the utility model provides a overlook structure schematic diagram of ware is divided to merit, as shown in fig. 1 and fig. 2, the utility model provides a ware is divided to merit includes: a substrate 11, a first metal layer 12 and a second metal layer 13 respectively located on two oppositely disposed surfaces of the substrate 11, and a plurality of metallized vias 14 extending through the substrate 11, the first metal layer 12 and the second metal layer 13. The metallized vias 14 form an input port 21, a first output port 22, a second output port 23, and a recess structure 24 on the substrate 11. The input port 21 comprises a first via array 31 and a second via array 32 formed by a plurality of metalized vias 14, the first output port 22 comprises a third via array 33 and a fourth via array 34 formed by a plurality of metalized vias 14, the second output port 23 comprises a fifth via array 35 and a sixth via array 36 formed by a plurality of metalized vias 14, the groove structure 24 is located between the fourth via array 34 and the sixth via array 36, and the groove structure 24 is recessed towards the input port 21.

The embodiment of the utility model provides a technical scheme forms input port 21, first output port 22, second output port 23 and groove structure 24 on substrate 11 through a plurality of metallized through-holes 14 that run through substrate 11, first metal level 12 and second metal level 13. The power divider is manufactured by a Substrate Integrated Waveguide (SIW) plane integrated waveguide technology, and meanwhile, the advantages of the traditional metal waveguide and a microstrip circuit are integrated, so that the power divider has the advantages of high Q value, high power capacity, wide working bandwidth, small size, easiness in integration and the like, and the technical problems of large size, narrow working bandwidth and the like of the power divider in the prior art are solved.

With continued reference to fig. 2, optionally, the first via array 31 and the third via array 33 form an "L" shaped structure, the second via array 32 and the fifth via array 35 form an "L" shaped structure, and the extending directions of the fourth via array 34 and the sixth via array 36 are located on the same straight line.

As shown in fig. 2, the input port 21, the first output port 22 and the second output port 23 form a "T" shaped structure, so the embodiment of the present invention provides a power divider, which can divide the power divider for H-T power, and input the signal at the input port 21, and output the signal at the first output port 22 and the second output port 23, thereby realizing that the waveguide energy is branched from the main waveguide, and the transmission power from the input port 21 to the first output port 22 and the second output port 23 and the reflection power from the input port 21 can be changed by changing the position of the groove structure 24.

With continued reference to fig. 2, optionally, the opening length of the input port 21 in the first direction is L1, the opening length of the first output port 22 in the second direction is L2, and the opening length of the second output port 23 in the second direction is L3, where L1 is L2 is L3. The first direction is perpendicular to the extending direction of the first via array 31, and the second direction is parallel to the extending direction of the first via array 31.

The opening lengths of the input port 21, the first output port 22 and the second output port 23 are the same, so as to form an H-T power divider, which is convenient for adjusting the transmission power of the first output port 22 and the second output port 23. Illustratively, L1-L2-L3-5.6 mm, with appropriate port opening length, can significantly reduce energy leakage. L1, L2 and L3 may also be determined according to the frequency of the transmitted electromagnetic wave, which is not limited by the present invention, and those skilled in the art can make various changes, modifications and substitutions without departing from the scope of the present invention.

Fig. 3 is a schematic structural diagram of a groove structure provided in an embodiment of the present invention, and as shown in fig. 2 and fig. 3, optionally, the metalized through hole 14 includes a first metalized through hole 141 and a second metalized through hole 142, where the first metalized through hole 141 forms the groove structure 24, and the second metalized through hole 142 forms the input port 21, the first output port 22, and the second output port 23. The diameter of the first metalized via 141 is R1, the distance between two adjacent first metalized vias 141 is D1, the diameter of the second metalized via 142 is R2, and the distance between two adjacent second metalized vias 142 is D2, wherein R1 < R2 and D1 < D2.

The diameter R2 of each second metalized through hole 142 and the distance D2 between two adjacent second metalized through holes 142 can affect the performance of the power divider in transmitting electromagnetic waves, the optimal transmission performance can be obtained by setting appropriate R2 and D2, R2 has a large influence on the cutoff frequency and the transmission performance, D2 needs to be set according to R2, and meanwhile, if R2 is too small, the processing difficulty is increased, if D2 is too small, the processing error is also increased, and if D2 is too large, the radiation power is increased, so that the transmission efficiency is reduced. Illustratively, R2 is more than or equal to 0.4mm and less than or equal to 0.7mm, and D2 is more than or equal to 0.6mm and less than or equal to 0.9 mm. With the increase of R1, the return loss of the input port 21 is increased correspondingly as the leakage of the electromagnetic wave transmitted from the input port 21 is reduced, and therefore, the return loss performance of the input port 21 is deteriorated, so that R1 < R2 improves the return loss performance of the input port 21. Illustratively, R1 is more than or equal to 0.05mm and less than or equal to 0.2mm, and D1 is more than or equal to 0.35mm and less than or equal to 0.45 mm. By providing the appropriate R1, the return loss performance of the input port 21 is improved while preventing electromagnetic waves from leaking out of the groove structure 24, while providing the appropriate D1 to match with R1.

With continued reference to fig. 2 and 3, the groove structure 24 may alternatively be a wedge-shaped structure.

Wherein, the return loss performance of the input port 21 can be further improved by adopting the wedge-shaped structure. The groove structure 24 may also be rectangular or other shapes, and the present invention is not limited thereto, and those skilled in the art can make various changes, adjustments and substitutions without departing from the scope of the present invention.

With continued reference to fig. 2, the center line of the groove structure 24 is optionally aligned with the center line of the input port.

The center line of the groove structure 24 and the center line of the input port are located on the same straight line, so that the power ratio of the output of the first output port 22 to the output of the second output port 23 is 1:1, and the power divider is convenient to design and manufacture.

With continued reference to fig. 2 and 3, the width L5 of the groove structure 24, the length L6 of the groove structure 24, the opening length of the input port L1, the opening length L2 of the first output port, the opening length L3 of the second output port, and the length L4 of the inductive diaphragm can be set to change the operating frequency band of the power divider.

Fig. 4 is a schematic structural diagram of another power divider according to an embodiment of the present invention, as shown in fig. 4, optionally, the power divider according to an embodiment of the present invention further includes a first sensitive diaphragm 41 and a second sensitive diaphragm 42. The first inductive membrane 41 is located on one side of the first through hole array 31 close to the second through hole array 32, the second inductive membrane 42 is located on one side of the second through hole array 32 close to the first through hole array 31, and a connection line between the first inductive membrane 41 and the second inductive membrane 42 is perpendicular to the extending direction of the first through hole array 31.

The metallized through holes 14 generate parasitic capacitance, and the influence of the parasitic capacitance can be eliminated through the first inductive diaphragm 41 and the second inductive diaphragm 42. At the same time, the return loss of the input port 21 can be reduced by the first and second

inductive diaphragms

41 and 42.

Optionally, the extension length of the first inductive membrane 41 is the same as the extension length of the second inductive membrane 42 along a first direction, wherein the first direction is perpendicular to the extension direction of the first through hole array 31.

The first inductive diaphragm 41 and the second inductive diaphragm 42 can cause reflection of an incident wave, the phase and the size of a reflected wave can be different according to the position and the size of the first inductive diaphragm 41 and the second inductive diaphragm 42, and the extension length of the first inductive diaphragm 41 and the extension length of the second inductive diaphragm 42 are adjusted, so that good matching between the power divider and a load can be realized. Illustratively, as shown in FIG. 2, the lengths of the first and second

inductive diaphragms

41 and 42 are L4, wherein L4 is 0.3mm ≦ 0.7 mm.

Optionally, the thicknesses of the first and second

inductive diaphragms

41 and 42 are 0.01mm, and by using the first and second thin

inductive diaphragms

41 and 42, the influence of the thicknesses of the first and second

inductive diaphragms

41 and 42 on the power divider can be ignored, and the design process is simplified.

Optionally, the materials of first inductive diaphragm 41 and second inductive diaphragm 42 are both copper.

Copper materials are adopted to enable the first sensing diaphragm 41 and the second sensing diaphragm 42 to have appropriate reflectivity, which is beneficial to realizing good matching between the power divider and the load.

The embodiment of the utility model provides a ware is divided to integrated waveguide H-T merit of substrate with groove structure adds inductive diaphragm not only can reduce the volume that the ware was divided to the H-T merit, improves its integrated level, is favorable to the integration with other circuits, makes the device lighter, still enlarges the work bandwidth that the ware was divided to the H-T merit, makes its work bandwidth wideer. By adding the first and second

inductive diaphragms

41, 42, the return loss of the input port 21 is reduced. The use bandwidth of the H-T power divider is enlarged by matching the groove structure 24, the first inductive diaphragm 41 and the second inductive diaphragm 42.

Optionally, the substrate 11 is made of teflon and/or ceramic.

Illustratively, the material of the substrate 11 is duroid (tm), and the relative dielectric constant thereof is 2.2, so that the waveguide radiation loss of the power divider is small.

The embodiment of the utility model provides a ware is divided to merit adopts this a plane integrated waveguide technique of Substrate Integrated Waveguide (SIW), divides the ware through periodic arrangement metallization through-hole preparation H-T merit on low-loss medium substrate, has assembled traditional metal waveguide and microstrip circuit's advantage, possesses advantages such as high Q value, high power capacity, less size, easily integration, still enlarges the work bandwidth that the ware was divided to H-T merit, makes its work bandwidth wideer. Meanwhile, the whole structure is formed by forming metallized through holes on a dielectric substrate, and the preparation of the dielectric Ceramic can be accurately realized by the technology of a Printed Circuit Board (PCB) or low temperature Co-fired Ceramic (LTCC), so that the dielectric Ceramic is very suitable for the design of a microwave Circuit.

It should be noted that the foregoing is only a preferred embodiment of the present invention and the technical principles applied. It will be understood by those skilled in the art that the present invention is not limited to the particular embodiments described herein, but is capable of various obvious changes, rearrangements and substitutions as will now become apparent to those skilled in the art without departing from the scope of the invention. Therefore, although the present invention has been described in greater detail with reference to the above embodiments, the present invention is not limited to the above embodiments, and may include other equivalent embodiments without departing from the scope of the present invention.

Claims

1. A power divider, comprising:

2. The power divider of claim 1, wherein the first and third arrays of vias form an "L" shaped structure;

3. The power divider of claim 2, wherein, in the first direction, the input port has an opening length of L1;

4. The power splitter of claim 1, wherein the metalized vias comprise a first metalized via forming the groove structure and a second metalized via forming the input port, the first output port, and the second output port;

5. The power divider of claim 1, wherein the groove structure is a wedge-shaped structure.

6. The power divider of claim 5, wherein the position of the center line of the groove structure is located on the same line as the center line of the input port.

7. The power divider of claim 1, further comprising a first inductive diaphragm and a second inductive diaphragm;

8. The power divider of claim 7, wherein, along a first direction, the first inductive diaphragm has the same extension as the second inductive diaphragm; wherein the first direction is perpendicular to an extending direction of the first via array.

9. The power divider of claim 7, wherein the first and second inductive diaphragms are both copper.

10. The power divider of claim 1, wherein the substrate is made of polytetrafluoroethylene or ceramic.