CN210458358U - Device for controlling stress distribution of sputtering film - Google Patents
Device for controlling stress distribution of sputtering film Download PDFInfo
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- CN210458358U CN210458358U CN201920651959.XU CN201920651959U CN210458358U CN 210458358 U CN210458358 U CN 210458358U CN 201920651959 U CN201920651959 U CN 201920651959U CN 210458358 U CN210458358 U CN 210458358U
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Abstract
The utility model provides a device for controlling stress distribution of a sputtering film, which comprises a pressure plate arranged below a wafer, wherein an electrode is arranged in the pressure plate and is powered by a power supply; the electrodes comprise n sub-electrodes nested from inside to outside, adjacent sub-electrodes are isolated through insulating isolation layers, and n is more than or equal to 2; each branch electrode corresponds to a group of power supply units, each power supply unit consists of a power supply and a power regulating circuit, one end of each power supply is grounded, and the other end of each power supply is connected with the corresponding branch electrode through the power regulating circuit. The utility model discloses a change the structure of electrode, make the stress of film among the deposition process can divide regional control, through the power size of controlling different position power for stress distribution in the film is more even, thereby improves the product yield.
Description
Technical Field
The utility model belongs to the technical field of thin film material deposition, concretely relates to a device for controlling sputter film stress distribution.
Background
In the process of depositing a film material, the film has internal stress due to factors such as impurities, defects, lattice mismatch, temperature expansion coefficient difference between the film and a substrate and the like in the film. Such stress may be compressive or tensile depending on the process. Generally, due to the existence of stress, the film is warped, cracked, and the like, and also has a certain influence on the performance of the device, so that the stress of the film is generally required to be within a certain range in the film deposition process.
During the deposition process, the energy of the particles incident on the silicon wafer can be changed by applying a radio frequency voltage on the substrate, so that the defect density in the film is changed, and the stress magnitude in the film is controlled. However, during the deposition process, because the plasma is not uniformly distributed in the cavity, the energy incident to the surface of the silicon wafer is not uniform, so that the stress distribution in the thin film is not uniform. In a sample with a large deposition area, such as a silicon wafer, the average stress on the surface of the silicon wafer can be controlled in this way, but the distribution of the stress in the silicon wafer cannot be controlled, as shown in fig. 1, the distribution of the stress in the silicon wafer obtained by the bias voltage mode is measured. Generally, due to the edge effect, the stress at the edge of the silicon wafer is relatively large, and the silicon wafer stress at the edge part can affect the yield of devices in the production process.
SUMMERY OF THE UTILITY MODEL
The to-be-solved technical problem of the utility model is: provided is an apparatus for controlling stress distribution of a sputtered film, which can make the stress distribution in the film more uniform, thereby improving the product yield.
The utility model discloses a solve the technical scheme who above-mentioned technical problem took and be: a device for controlling stress distribution of a sputtered film comprises a pressure plate arranged below a wafer, wherein an electrode is arranged in the pressure plate and is powered by a power supply; the method is characterized in that: the electrodes comprise n sub-electrodes nested from inside to outside, adjacent sub-electrodes are isolated by insulating isolation layers, and n is more than or equal to 2; each branch electrode corresponds to a group of power supply units, each power supply unit consists of a power supply and a power regulating circuit, one end of each power supply is grounded, and the other end of each power supply is connected with the corresponding branch electrode through the power regulating circuit.
According to the scheme, the innermost sub-electrode of the n sub-electrodes is circular, other sub-electrodes and the insulating isolation layer are all circular rings concentric with the innermost sub-electrode, and the other sub-electrodes and the insulating isolation layer are in alternate nested contact.
According to the scheme, the innermost branch electrode of the n branch electrodes is in a polygon shape, an oval shape, a trapezoid shape or an irregular shape, other branch electrodes and the insulation isolation layer are all in a ring shape with the same outer contour as the innermost branch electrode, and the other branch electrodes and the insulation isolation layer are alternately nested and contacted.
According to the scheme, the power supply is a radio frequency power supply, and the power regulating circuit is a radio frequency power regulating circuit.
According to the scheme, the power supply is a direct current power supply, and the power regulating circuit is a direct current power regulating circuit.
According to the scheme, the insulating isolation layer is a ceramic isolation layer.
According to the scheme, the outer contour of the innermost branch electrode in the n branch electrodes is a closed figure formed by at least one straight line and one curve, other branch electrodes and the insulation isolation layer are all in a ring shape which is the same as the outer contour of the innermost branch electrode, and the other branch electrodes and the insulation isolation layer are in alternate nested contact.
According to the scheme, the outer contour of the innermost branch electrode in the n branch electrodes is a closed graph formed by at least two curves, other branch electrodes and the insulation isolation layer are all in the same ring shape with the outer contour of the innermost branch electrode, and the other branch electrodes and the insulation isolation layer are alternately nested and contacted.
The utility model has the advantages that: by changing the structure of the electrode, the stress of the film in the deposition process can be controlled in different areas, and the stress distribution in the film is more uniform by controlling the power of the power supplies at different positions, so that the yield of the product is improved.
Drawings
FIG. 1 is a radial distribution diagram of the stress in a film along a silicon wafer.
Fig. 2 is a schematic structural diagram of an embodiment of the present invention.
Fig. 3 is a cross-sectional view AA of fig. 2.
Fig. 4 is a schematic structural diagram of another embodiment of the present invention.
Fig. 5 is a BB cross-sectional view of fig. 4.
FIG. 6 shows the calculation results of the stress distribution of the thin film obtained by different electrode depositions.
In the figure: the device comprises a wafer 1, an electrode 2, a first sub-electrode 2-1, a second sub-electrode 2-2, a third sub-electrode 2-3, a fourth sub-electrode 2-4, a pressure plate 3-4, a radio frequency power regulating circuit 4, a radio frequency power supply 5, an insulating isolation layer 6, a first isolation layer 6-1, a second isolation layer 6-2 and a third isolation layer 6-3.
Detailed Description
The present invention will be further described with reference to the following specific examples and accompanying drawings.
The first embodiment is as follows:
the embodiment provides a device for controlling stress distribution of a sputtered film, as shown in fig. 2 and fig. 3, comprising a platen 3 disposed below a wafer 1, wherein an electrode 2 is disposed in the platen 3, and the electrode 2 is powered by a power supply; the electrode comprises 2 sub-electrodes which are nested from inside to outside and are respectively a first sub-electrode 2-1 and a second sub-electrode 2-2, and the first sub-electrode 2-1 and the second sub-electrode 2-2 are isolated by an insulating isolation layer 6. Each branch electrode corresponds to a group of power supply units, each power supply unit is composed of a radio frequency power supply 5 and a radio frequency power adjusting circuit 4, one end of the radio frequency power supply 5 is grounded, and the other end of the radio frequency power supply 5 is connected with the corresponding branch electrode through the radio frequency power adjusting circuit 4.
In the 2 sub-electrodes, the first sub-electrode 2-1 is circular, and the second sub-electrode 2-2 and the insulating isolation layer 6 are both circular rings concentric with the first sub-electrode 2-1.
The shape of the sub-electrode is not required to be excessive, for example, the first sub-electrode 2-1 may also be a polygon, an ellipse, a trapezoid, or an irregular shape, or may also be any other shape, for example, the outer contour of the first sub-electrode 2-1 is a closed figure formed by at least one straight line and one curved line, or a closed figure formed by at least two curved lines. The second sub-electrode 2-2 and the insulating isolation layer 6 are both in the shape of a ring with the same outline as the first sub-electrode 2-1.
In this embodiment, the insulating isolation layer 6 is a ceramic isolation layer.
The power of the power supply is respectively controlled for the first sub-electrode 2-1 and the second sub-electrode 2-2 by arranging 2 sub-electrodes, so that the electric field is not uniformly distributed on the electrode 2, and the distribution of the stress in the wafer 1 is controlled.
The power supply can also be a direct current power supply.
Example two:
the embodiment provides a device for controlling stress distribution of a sputtered film, as shown in fig. 4 and 5, comprising a platen 3 arranged below a wafer 1, wherein an electrode 2 is arranged in the platen 3, and the electrode 2 is powered by a power supply; the electrode comprises 4 sub-electrodes which are nested from inside to outside and are respectively a first sub-electrode 2-1, a second sub-electrode 2-2, a third sub-electrode 2-3 and a fourth sub-electrode 2-4, the first sub-electrode 2-1 and the second sub-electrode 2-2 are isolated through a first insulating isolation layer 6-1, the second sub-electrode 2-2 and the third sub-electrode 2-3 are isolated through a second insulating isolation layer 6-2, and the third sub-electrode 2-3 and the fourth sub-electrode 2-4 are isolated through a third insulating isolation layer 6-3. Each branch electrode corresponds to a group of power supply units, each power supply unit is composed of a radio frequency power supply 5 and a radio frequency power adjusting circuit 4, one end of the radio frequency power supply 5 is grounded, and the other end of the radio frequency power supply 5 is connected with the corresponding branch electrode through the radio frequency power adjusting circuit 4.
Among the 4 sub-electrodes, the first sub-electrode 2-1 is circular, and the other sub-electrodes and the insulating isolation layer are all circular rings concentric with the first sub-electrode 2-1.
The shape of the sub-electrode is not required to be excessive, for example, the first sub-electrode 2-1 may also be a polygon, an ellipse, a trapezoid, or an irregular shape, or may also be any other shape, for example, the outer contour of the first sub-electrode 2-1 is a closed figure formed by at least one straight line and one curved line, or a closed figure formed by at least two curved lines. The other sub-electrodes and the insulating isolation layer are all in the shape of a ring with the same outline as the first sub-electrode 2-1.
In this embodiment, the insulating isolation layer 6 is a ceramic isolation layer.
By controlling the power of the edge power supply to be smaller than the power of the power supply at the center position, the difference between the electric fields at the center and the edge of the wafer 1 is relatively reduced, and the energy difference is relatively smaller when ions are deposited on the surface of the wafer 1, so that the stress in the film is more uniform. Fig. 6 is a graph showing the distribution of the internal stress of the film obtained by the electrode deposition in the single-wafer structure and the stress in the film obtained by the electrode deposition with 4 sub-electrodes, wherein the distribution range of the internal stress of the film in the single-electrode structure is about 330MPa, and the distribution of the internal stress of the film can be reduced to be within 80MPa by adopting the electrodes in the nested 4-ring structure, so that the structure can better control the distribution of the stress.
In addition to the above embodiments, other numbers of sub-electrodes may be provided, and the principle is the same as the above embodiments.
According to the experiment, the stress of the deposited film is linearly related to the power of the radio frequency power source applied to the substrate. Therefore, the invention sets the electrodes into a plurality of annular sub-electrodes, connects different electrodes onto different power supplies, and controls the power of different sub-electrodes, thereby controlling the distribution of stress in the wafer 1, improving the uniformity of stress distribution in the wafer 1, and improving the yield of products.
The above embodiments are only used for illustrating the design ideas and features of the present invention, and the purpose thereof is to enable those skilled in the art to understand the contents of the present invention and to implement the present invention, and the protection scope of the present invention is not limited to the above embodiments. Therefore, all the equivalent changes or modifications made according to the principles and design ideas disclosed by the present invention are within the protection scope of the present invention.
Claims (8)
1. A device for controlling stress distribution of a sputtered film comprises a pressure plate arranged below a wafer, wherein an electrode is arranged in the pressure plate and is powered by a power supply; the method is characterized in that: the electrodes comprise n sub-electrodes nested from inside to outside, adjacent sub-electrodes are isolated by insulating isolation layers, and n is more than or equal to 2; each branch electrode corresponds to a group of power supply units, each power supply unit consists of a power supply and a power regulating circuit, one end of each power supply is grounded, and the other end of each power supply is connected with the corresponding branch electrode through the power regulating circuit.
2. The apparatus of claim 1, wherein: in the n sub-electrodes, the innermost sub-electrode is circular, the other sub-electrodes and the insulating isolation layer are all circular rings concentric with the innermost sub-electrode, and the other sub-electrodes and the insulating isolation layer are alternately nested and contacted.
3. The apparatus of claim 1, wherein: in the n sub-electrodes, the innermost sub-electrode is polygonal, elliptical or trapezoidal, the other sub-electrodes and the insulating isolation layer are all in the shape of a ring with the same outer contour as the innermost sub-electrode, and the other sub-electrodes and the insulating isolation layer are alternately nested and contacted.
4. The apparatus of claim 1, wherein: the power supply is a radio frequency power supply, and the power regulating circuit is a radio frequency power regulating circuit.
5. The apparatus of claim 1, wherein: the power supply is a direct current power supply, and the power regulating circuit is a direct current power regulating circuit.
6. The apparatus of claim 1, wherein: the insulating isolation layer is a ceramic isolation layer.
7. The apparatus of claim 1, wherein: in the n sub-electrodes, the outline of the innermost sub-electrode is a closed figure formed by at least one straight line and one curve, other sub-electrodes and the insulation isolation layer are all in the same ring shape with the outline of the innermost sub-electrode, and the other sub-electrodes and the insulation isolation layer are alternately nested and contacted.
8. The apparatus of claim 1, wherein: in the n sub-electrodes, the outline of the innermost sub-electrode is a closed graph formed by at least two curves, other sub-electrodes and the insulation isolation layer are all in the same ring shape with the outline of the innermost sub-electrode, and the other sub-electrodes and the insulation isolation layer are alternately nested and contacted.
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| CN201920651959.XU CN210458358U (en) | 2019-05-08 | 2019-05-08 | Device for controlling stress distribution of sputtering film |
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| CN201920651959.XU CN210458358U (en) | 2019-05-08 | 2019-05-08 | Device for controlling stress distribution of sputtering film |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111850476A (en) * | 2020-07-02 | 2020-10-30 | Tcl华星光电技术有限公司 | Vapor deposition device and method and display device |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111850476A (en) * | 2020-07-02 | 2020-10-30 | Tcl华星光电技术有限公司 | Vapor deposition device and method and display device |
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