CN210420252U - Automatic inflation system of double-gas-source crystal growth furnace - Google Patents
Automatic inflation system of double-gas-source crystal growth furnace Download PDFInfo
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- CN210420252U CN210420252U CN201920803682.8U CN201920803682U CN210420252U CN 210420252 U CN210420252 U CN 210420252U CN 201920803682 U CN201920803682 U CN 201920803682U CN 210420252 U CN210420252 U CN 210420252U
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Abstract
The utility model discloses an automatic inflation system of two air supply crystal growth furnaces, including crystal growth furnace (1), it still includes first air supply branch road (2), second air supply branch road (3), solenoid directional valve (4), branch road (5) and treater (9) take a breath, solenoid directional valve (4) and electric stop valve (10) move simultaneously and realize the break-make of first air supply branch road (2) and first one-way gas circuit and the break-make of second air supply branch road (3) and the one-way gas circuit of second, and electric stop valve (10) are the normally closed valve. The utility model discloses according to the gas pressure in the crystal growth stove, through the break-make of electromagnetic directional valve and electric stop valve simultaneous movement realization first air supply branch road and first one-way gas circuit and the break-make of second air supply branch road and the one-way gas circuit of second, improved the gas filled degree of automation of crystal growth stove, realize the automatic switch-over between the different air supplies, reduced the influence to different crystal growths, improved the uniformity of crystal growth.
Description
Technical Field
The utility model relates to a crystal growth technical field especially relates to an automatic inflation system of two air supply crystal growth furnaces.
Background
Czochralski (CZ) method comprises melting a polycrystalline silicon ingot in a quartz crucible by heating in a single crystal furnace, and immersing a rod-shaped seed crystal (referred to as seed crystal) having a diameter of only 10mm in the melt. At a proper temperature, silicon atoms in the melt form regular crystals on a solid-liquid interface along the silicon atom arrangement structure of the seed crystal, and the crystals become single crystals. The seed crystal is slightly rotated and lifted upwards, so that silicon atoms in the molten liquid continue to crystallize on the previously formed single crystal and continue to have a regular atomic arrangement structure. If the whole crystallization environment is stable, crystals can be formed repeatedly, and finally a cylindrical silicon single crystal with orderly arranged atoms, namely a silicon single crystal ingot, is formed. When crystallization is accelerated, the diameter of the crystal becomes coarse, the diameter can be made fine by increasing the rate of increase, and the crystallization rate can be suppressed by increasing the temperature. On the contrary, if the crystallization is slowed and the diameter becomes thin, the control is performed by reducing the pulling speed and the temperature. At the beginning of crystal pulling, a thin neck with a certain length and a diameter of 3-5 mm is led out to eliminate crystal dislocation, and the process is called seeding. Then the diameter of the single crystal is enlarged to meet the process requirement, and the process enters an equal diameter stage until most of the silicon melt is crystallized into a single crystal ingot, and only a small amount of residual materials are left.
During crystal growth, different supplies of protective gas are required for the growth of different crystals. In order to obtain crystals with good integrity, the diffusion speed needs to be controlled and inert gas protection needs to be added. Therefore, in the CZ method crystal growth process, inert gas needs to be supplemented and switched according to gas components in the crystal growth furnace, but the existing gas supplementing operation is mainly carried out manually, the inflation process of the crystal growth is that the vacuum pressure gauge is observed manually to open and close the inflation valve, the automation degree is low, the inflation quantity and the pressure have large deviation, the uniformity of the crystal is not good enough, the crystal growth is greatly influenced, and the manual operation efficiency is low.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide an automatic inflation system of double-air-source crystal growth furnace can overcome the not enough of prior art, improves the gas-filled degree of automation of crystal growth furnace, realizes the automatic switch-over of different inert gas and second gas, reduces the influence to different crystal growth, improves the uniformity of crystal growth.
The purpose of the utility model is realized through the following technical scheme: an automatic inflation system of a double-gas-source crystal growth furnace comprises the crystal growth furnace, and further comprises a first gas source branch, a second gas source branch, an electromagnetic directional valve, a ventilation branch and a processor, wherein one end of the first gas source branch is communicated with a first gas source port, the other end of the first gas source branch is connected with a first gas control port of the first electromagnetic directional valve, one end of the second gas source branch is communicated with a second gas source port, the other end of the second gas source branch is connected with a second gas control port of the electromagnetic directional valve, a gas outlet of the electromagnetic directional valve is communicated with the crystal growth furnace through the ventilation branch, and an electric stop valve is arranged on the ventilation branch; preferably, the inert gas is argon, and the flow of the argon for crystal growth is generally recommended to be 30slpm and the pressure is>4.5kg/cm2. The electric stop valve is a normally closed valve.
The crystal growth furnace is provided with a gas pressure sensor, the signal output end of the gas pressure sensor is communicated with the processor, and the execution signal output end of the processor is respectively electrically connected with the electromagnetic directional valve and the relay of the electric stop valve;
the electromagnetic directional valve and the electric stop valve act simultaneously to realize the on-off of the first air source branch and the first one-way air passage and the on-off of the second air source branch and the second one-way air passage.
The first gas source port is an argon gas source port, and the second gas source port is a nitrogen gas source port.
The crystal growth furnace is provided with a first gas concentration detector for detecting the concentration of inert gas and a second gas concentration detector for detecting second gas, the signal transmission ends of the first gas concentration detector and the second gas concentration detector are communicated with the processor, and the communication mode of the first gas concentration detector and the second gas concentration detector is consistent with the communication mode of the gas pressure sensor and the processor. The gas concentration in the crystal growth furnace can be reflected in real time through the auxiliary display of the first gas concentration detector and the second gas concentration detector. Preferably, the first gas concentration detector and the second gas concentration detector are detectors with liquid displays, such as a GT200 modular intelligent gas alarm, are fixed instruments capable of continuously detecting gas concentrations in a working environment, and have excellent sensitivity and repeatability; the LED digital display suitable for factory application displays the concentration value of the leaked gas in real time, adopts a standard three-wire system 4-20mA current signal output, is compatible with the existing alarm control unit or DCS (distributed control system), and can directly transmit the gas concentration signal to the processor.
The air exchange branch is provided with a one-way valve.
The electromagnetic directional valve is a two-position three-way electromagnetic valve.
And the two sides of the electric stop valve are also connected with a manual stop valve in parallel.
The crystal growth furnace is also provided with an exhaust branch, and an exhaust valve A is arranged on the exhaust branch.
The gas filter, the flowmeter, the pressure reducing valve and the exhaust valve B are sequentially arranged on the first gas source branch and the second gas source branch, the gas filter can effectively filter gas impurities in the first gas source port and the second gas source port and effectively provide gas purity for crystal growth, and when the gas pressure in the first gas source branch and the second gas source branch is too high, the operations of pressure reduction and exhaust can be carried out, so that the safety performance of the whole inflation system is further improved.
The exhaust valve B is provided with a silencer, so that silencing treatment is carried out when the gas flow on the gas source branch is overlarge and needs to be exhausted, and the noise pollution of the working environment caused by exhaust is avoided.
The signal output end of the gas pressure sensor is communicated with the processor in a wireless/wired mode, and an operator can perform wired signal transmission and wireless signal transmission according to the actual situation on site.
The gas pressure sensor is communicated with the processor in a ZigBee, Wi-Fi or Bluetooth wireless communication mode.
The utility model has the advantages that: according to the gas pressure in the crystal growth furnace, the electromagnetic directional valve and the electric stop valve act simultaneously to realize the on-off of the first gas source branch and the first one-way gas circuit and the on-off of the second gas source branch and the second one-way gas circuit, so that the automation degree of the inflation of the crystal growth furnace is improved, the automatic switching among different gas sources is realized, the influence on the growth of different crystals is reduced, and the uniformity of the crystal growth is improved.
Drawings
Fig. 1 is a schematic structural view of the present invention;
FIG. 2 is a schematic diagram of the communication connection of the processor of the present invention;
FIG. 3 is a schematic structural view of the air source switching of the present invention;
in the figure, 1-crystal growth furnace, 2-first gas source branch, 3-second gas source branch, 4-electromagnetic directional valve, 5-ventilation branch, 6-second gas concentration detector, 7-first gas source port, 8-second gas source port, 9-processor, 10-electric stop valve, 11-manual stop valve, 12-exhaust valve A, 13-gas pressure sensor, 14-gas filter, 15-flowmeter, 16-pressure reducing valve, 17-exhaust valve B, 18-silencer and 19-first gas concentration detector.
Detailed Description
The technical solution of the present invention is described in further detail below with reference to the accompanying drawings, but the scope of the present invention is not limited to the following description.
As shown in fig. 1 and 2, an automatic inflation system of a double-gas-source crystal growth furnace comprises a crystal growth furnace 1, and further comprises a first gas source branch 2, a second gas source branch 3, an electromagnetic directional valve 4, a ventilation branch 5 and a processor 9, wherein one end of the first gas source branch 2 is communicated with a first gas source port 7, the other end of the first gas source branch 2 is connected with a first gas control port of the first electromagnetic directional valve 4, one end of the second gas source branch 3 is communicated with a second gas source port 8, the other end of the second gas source branch 3 is connected with a second gas control port of the electromagnetic directional valve 4, a gas outlet of the electromagnetic directional valve 4 is communicated with the crystal growth furnace 1 through the ventilation branch 5, and the ventilation branch 5 is provided with an electric stop valve 10; the electric shutoff valve 10 is a normally closed valve.
The crystal growth furnace 1 is provided with a gas pressure sensor 13, the signal output end of the gas pressure sensor 13 is communicated with the processor 9, and the execution signal output end of the processor 9 is respectively electrically connected with the electromagnetic directional valve 4 and the relay of the electric stop valve 10;
the electromagnetic directional valve 4 and the electric stop valve 10 act simultaneously to realize the on-off of the first air source branch 2 and the first one-way air path and the on-off of the second air source branch 3 and the second one-way air path, when the first air source branch 2 and the first one-way air path are in an open state, the second air source branch 3 and the second one-way air path are in an open state, and when the first air source branch 2 and the first one-way air path are in an open state, the second air source branch 3 and the second one-way air path are in an open state.
The top of the crystal growth furnace 1 is provided with a first gas concentration detector 19 for detecting the concentration of inert gas, the middle lower part of the crystal growth furnace 1 is provided with a second gas concentration detector 6 for detecting second gas, and the signal transmission ends of the first gas concentration detector 19 and the second gas concentration detector 6 are communicated with the processor 9.
The first gas source port 7 is an argon gas source port, and the second gas source port 8 is a nitrogen gas source port.
The air exchange branch 5 is provided with a one-way valve.
The electromagnetic directional valve 4 is a two-position three-way electromagnetic valve.
The two sides of the electric stop valve 10 are also connected with a manual stop valve 11 in parallel, and manual operation can be performed when necessary.
The crystal growth furnace 1 is also provided with an exhaust branch, and an exhaust valve A12 is arranged on the exhaust branch.
And the first gas source branch 2 and the second gas source branch 3 are respectively provided with a gas filter 14, a flow meter 15, a pressure reducing valve 16 and an exhaust valve B17 in sequence.
The exhaust valve B17 is provided with a silencer 18.
The signal output end of the gas pressure sensor 13 is communicated with the processor 9 in a wireless/wired mode.
The gas pressure sensor 13 is communicated with the processor 9 in a ZigBee, Wi-Fi or Bluetooth wireless communication mode.
The gas pressure value (working pressure value) and the limit pressure value of the gas to be replaced are set in the processor 9, the pressure values are set to be different according to the requirements of different gases, meanwhile, the processor 9 is combined with the parameters of the first gas concentration detector 19 and the second gas concentration detector 6 to judge, the gas pressure values are different due to the fact that the density of the gases is different, the actual gas pressure in the crystal growth furnace 1 is collected, the processor 9 starts an action execution signal, and the electromagnetic directional valve 4 and the relay of the electric stop valve 10 are electrified at the same time to act. For example, when two kinds of gas sources that need to carry out gas switching are nitrogen gas and argon gas, the density of nitrogen gas is 1.25g/L, the density of argon gas is 1.7841g/L, when needing to change to argon gas from nitrogen gas, when actual gas pressure is less than minimum pressure value, combine the detection of gas concentration detector simultaneously, if the density that detects is nitrogen gas, take a breath the operation, as shown in fig. 3, relay KM2 of electromagnetic directional valve 4 and relay KM1 of electric check valve 10 are switched on simultaneously, electric check valve 10 switches on, electromagnetic directional valve 4 commutates simultaneously, the first gas source branch road 2 of connecting argon gas is put through, if the density that detects is other gases, electric check valve 10 closes, do not take a breath the operation. On the contrary, when the nitrogen gas is required to be replaced from the argon gas, when the actual gas pressure is greater than the minimum pressure value, if the detected density is the nitrogen gas, the ventilation operation is carried out, the relays of the electromagnetic directional valve 4 and the electric stop valve 10 are simultaneously electrified, the electric stop valve 10 is conducted, the electromagnetic directional valve 4 is simultaneously switched, and the second gas source branch 3 connected with the nitrogen gas is connected. And if the pressure exceeds the limit pressure value, opening the exhaust branch for pressure reduction treatment. Preferably, when the limit pressure value is exceeded, the processor 9 triggers a corresponding alarm device to alarm, and the opening or closing of the exhaust branch can be performed manually or according to an operation execution signal of the processor. The processor 9 mainly determines according to the gas pressure and concentration signals, and then performs corresponding operations, which can be performed by conventional signal processors adopted by those skilled in the art, and will not be described in detail herein.
The foregoing is illustrative of the preferred embodiments of the present invention, and it is to be understood that the invention is not limited to the precise forms disclosed herein, and that various other combinations, modifications, and environments may be resorted to, falling within the scope of the invention as defined by the appended claims. But that modifications and variations may be effected by those skilled in the art without departing from the spirit and scope of the invention, which is to be limited only by the claims appended hereto.
Claims (10)
1. An automatic inflation system of a double-gas-source crystal growth furnace comprises a crystal growth furnace (1) and is characterized by further comprising a first gas source branch (2), a second gas source branch (3), an electromagnetic reversing valve (4), a ventilation branch (5) and a processor (9), wherein one end of the first gas source branch (2) is communicated with a first gas source port (7), the other end of the first gas source branch (2) is connected with a first gas control port of the first electromagnetic reversing valve (4), one end of the second gas source branch (3) is communicated with a second gas source port (8), the other end of the second gas source branch (3) is connected with a second gas control port of the electromagnetic reversing valve (4), a gas outlet of the electromagnetic reversing valve (4) is communicated with the crystal growth furnace (1) through the ventilation branch (5), and the ventilation branch (5) is provided with an electric stop valve (10);
a gas pressure sensor (13) is arranged on the crystal growth furnace (1), the signal output end of the gas pressure sensor (13) is communicated with the processor (9), and the execution signal output end of the processor (9) is respectively and electrically connected with the electromagnetic directional valve (4) and the relay of the electric stop valve (10);
the electromagnetic directional valve (4) and the electric stop valve (10) act simultaneously to realize the on-off of the first air source branch (2) and the first one-way air path and the on-off of the second air source branch (3) and the second one-way air path, the electric stop valve (10) is a normally closed valve, when the first air source branch (2) and the first one-way air path are in an on state, the second air source branch (3) and the second one-way air path are in an off state, and when the first air source branch (2) and the first one-way air path are in an off state, the second air source branch (3) and the second one-way air path are in an on state;
a first gas concentration detector (19) for detecting the concentration of inert gas and a second gas concentration detector (6) for detecting second gas are arranged on the crystal growth furnace (1), and signal transmission ends of the first gas concentration detector (19) and the second gas concentration detector (6) are communicated with the processor (9).
2. The automatic gas charging system of the double-gas source crystal growth furnace according to claim 1, characterized in that: the first gas source port (7) is an argon gas source port, and the second gas source port (8) is a nitrogen gas source port.
3. The automatic gas charging system of the double-gas source crystal growth furnace according to claim 1, characterized in that: the air exchange branch (5) is provided with a one-way valve.
4. The automatic gas charging system of the double-gas source crystal growth furnace according to claim 1, characterized in that: the electromagnetic directional valve (4) is a two-position three-way electromagnetic valve.
5. The automatic gas charging system of the double-gas source crystal growth furnace according to claim 1, characterized in that: and both sides of the electric stop valve (10) are also connected with a manual stop valve (11) in parallel.
6. The automatic gas charging system of the double-gas source crystal growth furnace according to claim 1, characterized in that: the crystal growth furnace comprises a crystal growth furnace body (1) and is further provided with an exhaust branch, and an exhaust valve A (12) is arranged on the exhaust branch.
7. The automatic gas charging system of the double-gas source crystal growth furnace according to claim 1, characterized in that: and the first gas source branch (2) and the second gas source branch (3) are sequentially provided with a gas filter (14), a flowmeter (15), a pressure reducing valve (16) and an exhaust valve B (17).
8. The automated gas charging system of a dual gas source crystal growth furnace of claim 7, wherein: and a silencer (18) is arranged on the exhaust valve B (17).
9. The automatic gas charging system of the double-gas source crystal growth furnace according to claim 1, characterized in that: and the signal output end of the gas pressure sensor (13) is communicated with the processor (9) in a wireless/wired mode.
10. The automated gas charging system of a dual gas source crystal growth furnace of claim 9, wherein: the gas pressure sensor (13) is communicated with the processor (9) in a ZigBee, Wi-Fi or Bluetooth wireless communication mode.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920803682.8U CN210420252U (en) | 2019-05-30 | 2019-05-30 | Automatic inflation system of double-gas-source crystal growth furnace |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920803682.8U CN210420252U (en) | 2019-05-30 | 2019-05-30 | Automatic inflation system of double-gas-source crystal growth furnace |
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| CN210420252U true CN210420252U (en) | 2020-04-28 |
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| CN201920803682.8U Active CN210420252U (en) | 2019-05-30 | 2019-05-30 | Automatic inflation system of double-gas-source crystal growth furnace |
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