CN210405299U

CN210405299U - Switch structure with transceiving switching and polarization switching functions

Info

Publication number: CN210405299U
Application number: CN201922185446.7U
Authority: CN
Inventors: 宋柏; 刘秋实
Original assignee: Chengdu Zhirong Technology Co Ltd
Current assignee: Chengdu Zhirong Technology Co.,Ltd.
Priority date: 2019-12-09
Filing date: 2019-12-09
Publication date: 2020-04-24
Anticipated expiration: 2029-12-09

Abstract

The utility model relates to a radio frequency front end TR switches and radar antenna polarization switches control circuit, concretely relates to possesses switch structure that receiving and dispatching switched and polarization switching function, including first RF port Tx, second RF port Rx, third RF port V, fourth RF port H and pHEMT transistor. The switching states of the pHEMT transistor control the switching states of the four ports; the first RF port Tx is connected to a third RF port V and a fourth RF port H through two switches, respectively; the second RF port Rx is connected to the third RF port V and the fourth RF port H through two switches, respectively. The radio frequency receiving and transmitting switching and antenna polarization switching device has the advantages that two functions of radio frequency receiving and transmitting switching and antenna polarization switching are achieved simultaneously through one switch, integration with a semiconductor process suitable for an amplifier can be achieved, integration level of a TR chip is improved, assembling steps are reduced, and product consistency is improved.

Description

Switch structure with transceiving switching and polarization switching functions

Technical Field

The utility model relates to a radio frequency front end TR switches and radar antenna polarization switching control circuit, concretely relates to possesses receiving and dispatching and switches and polarizes switch structure of function.

Background

Radio Frequency (RF) switches are used to selectively open or close electrical connections for RF signals. In many applications, high electron mobility field effect transistors (pHEMT) are used as RF switches, PIN diodes are sometimes used, and Bipolar Junction Transistors (BJTs) may also be used as RF switches. The defects of the existing switch structure mainly lie in that: 1. the two functions of radio frequency receiving and transmitting switching and antenna polarization switching cannot be simultaneously realized by one switch; 2. there are deficiencies in the integration of TR chips (systems), assembly simplicity, and product consistency.

Disclosure of Invention

In order to realize the purpose of the utility model, the application is realized by the following technical scheme:

a switch structure with functions of transmitting and receiving switching and polarization switching is characterized in that:

the method comprises the following steps: a first RF port Tx, a second RF port Rx, a third RF port V, a fourth RF port H and pHEMT transistors, the switching states of which control the switching states of the four ports; the first RF port Tx is connected to a third RF port V and a fourth RF port H through two switches, respectively; the second RF port Rx is connected to the third RF port V and the fourth RF port H through two switches, respectively. An RF signal enters from the terminal first RF port Tx and can be selectively coupled to the destination third RF port V or fourth RF port H by selective opening or closing of the two switches. Or an RF signal enters from the third RF port V or the fourth RF port H, and the RF signal can be selectively coupled to the destination second RF port Rx by selectively opening or closing the two switches. The pHEMT transistor includes a plurality of topologies, such as series, parallel, and a combination of series and parallel, a gate voltage supply circuit configured to selectively provide a gate voltage to a gate terminal of the pHEMT transistor. The pHEMT transistor is configured to operate in one of forward saturation or reverse saturation when the gate voltage supply circuit provides a gate voltage.

Also included are inductances L1 and L2 that resonate with pHEMT transistor Cds.

Also included are capacitors, inductors, resistors, and microstrip lines that impedance match, block, and provide a direct current path with the pHEMT transistor.

Further comprising impedances between said first Tx, second Rx, third V and fourth H RF ports and a reference potential.

The impedance comprises a resistor having a resistance value of 50 omega.

The reference potential is ground.

The utility model has the advantages that:

the antenna polarization switching device has the advantages that two functions of radio frequency receiving and transmitting switching and antenna polarization switching are achieved by one switch, the antenna polarization switching device can be integrated with a semiconductor process applicable to an amplifier, the integration level of a TR chip (system) is improved, assembling steps are reduced, and the product consistency is improved.

Drawings

Fig. 1 is a topology of a switch for rf transceiver and antenna polarization switching.

Fig. 2 is a block diagram of a device according to an embodiment.

Fig. 3 is a diagram of a pHEMT transistor that may be used in an embodiment.

Fig. 4-6 illustrate several switch transistor configurations for the same rf duplexer topology as shown in fig. 1, and the switch transistor configurations are not limited to these configurations in practical circuit applications according to performance requirements.

Fig. 7 is a circuit diagram illustrating a device according to an embodiment and with the switching transistor configuration of fig. 6 selected according to performance requirements, but not limited to the switching transistor configuration of fig. 6.

Detailed Description

the method comprises the following steps: a first RF port Tx, a second RF port Rx, a third RF port V, a fourth RF port H and pHEMT transistors, the switching states of which control the switching states of the four ports; the first RF port Tx is connected to a third RF port V and a fourth RF port H through two switches, respectively; the second RF port Rx is connected to the third RF port V and the fourth RF port H through two switches, respectively. An RF signal enters from the terminal first RF port Tx and can be selectively coupled to the destination third RF port V or fourth RF port H by selective opening or closing of the two switches. Or an RF signal enters from the third RF port V or the fourth RF port H, and the RF signal can be selectively coupled to the destination second RF port Rx by selectively opening or closing the two switches.

The pHEMT transistor includes a plurality of topologies, such as series, parallel, and a combination of series and parallel, a gate voltage supply circuit configured to selectively provide a gate voltage to a gate terminal of the pHEMT transistor.

The pHEMT transistor is configured to operate in one of forward saturation or reverse saturation when the gate voltage supply circuit provides a gate voltage.

Further, inductances L1 and L2, which resonate with pHEMT transistor Cds, are included.

Further, capacitors, inductors, resistors and microstrip lines that impedance match, block and provide a direct current path with the pHEMT transistors are included.

Further, impedances between the first RF port Tx, the second RF port Rx, the third RF port V and the fourth RF port H and a reference potential are included.

The impedance comprises a resistor having a resistance value of 50 omega.

The reference potential is ground.

Fig. 1 shows a four-port switch structure 10 for rf transmit/receive and antenna polarization switching, which includes four ports Tx11, Rx12, V13, and H14, and four single-pole single-position switches. An RF signal enters from the terminal Tx11 and can be selectively coupled to the destination V14 or H13 terminal by selective opening or closing of two switches. Or an RF signal enters from the V14 or H13 terminals, and the RF signal can be selectively coupled to the destination Rx12 terminal by selective opening or closing of two switches.

Fig. 2 shows a device according to an embodiment. The device of fig. 2 comprises a polarisation transceiver switching circuit 21 comprising a high electron mobility field effect transistor (pHEMT) and optionally additional components such as microstrip lines, inductors, capacitors or resistors coupled to the transistors.

The transmit chain 22 and the receive chain 23 are both coupled to two input Tx11 and Rx12 terminals of the polarization transceiving switch 21. In the transmitting chain, an RF signal passes through a terminal Tx11 and the selective opening or closing of two switches, and the RF signal can be selectively coupled to a destination V14 or H13 terminal, connected to a system antenna V25 or an antenna H24 port and transmitted. In the receiving chain, an RF signal passes through the selective opening or closing of the two switches, and the RF signal can be selectively received from the system antenna V25 or the antenna H24 port and coupled to the Rx12 terminal of the polarization transceiving switch 21. The source of the RF signal may be any type of circuit that generates an RF signal.

The polarization transceiving switch 21 is controlled by four sets of dc voltages. In an embodiment, the dc control voltage may be used as a voltage source to selectively provide a voltage to the gate G31 terminal of the field effect transistor switching device. In some embodiments, as will be explained below using examples, to enable Vc to establish a voltage at gate terminal G31, the source S33 terminal of the field effect transistor device may be coupled to a reference potential, such as ground, via an inductive device.

Fig. 3 illustrates an illustrative high electron mobility field effect transistor pHEMT35 for use in various components of various embodiments hereinafter. However, the concepts and techniques disclosed herein may also be applied to all other types of semiconductor transistors, such as hemts, HBTs, BJTs, and the like. The semiconductor transistor may be implemented based on GaAs, but may also be implemented based on other materials, such as InP, GaN, Si, SiGe, SiC, etc.

pHEMT35 in the embodiment of fig. 3 includes a gate terminal 31, a drain terminal 32, and a source terminal 34. The arrow 33 represents the drain-source current Ids, and Vc36 represents the gate voltage Vgs. The gate voltage Vgs, which is a DC voltage, determines the polarity of the drain-source coupling. The more the transistor operates towards saturation, the lower the ohmic losses of drain-source coupling.

Fig. 4-6 illustrate several switch transistor configurations for the same rf duplexer topology as shown in fig. 1.

The switching device of fig. 4 includes a first terminal 41 and a second terminal 42. The switching device of fig. 4 is adapted to selectively provide a radio frequency coupled between the terminals 41, 42 (i.e. to selectively provide a low ohmic path for a radio frequency signal or a high ohmic substantial isolation for a radio frequency signal). To provide this switching, and at the same time achieve higher switching device isolation and lower insertion loss, the switching device of fig. 4 includes switching transistor devices, e.g., hemt 47, inductor L1, resistor R1, and power supply Vc 1. The drain D of transistor 47 is inductively coupled to the source S to improve isolation when the transistor is turned off. Transistor source S is coupled/connected to ground through the substrate ground hole, causing Vc1 to establish a voltage at gate terminal G.

The switching device of fig. 5 comprises a first terminal 43 and a second terminal 44. The switching device of fig. 5 is adapted to selectively provide a radio frequency coupled between the terminals 43, 44 (i.e., to selectively provide a low ohmic path for a radio frequency signal or for high ohmic isolation of a radio frequency signal). To provide this switching while achieving high switching device isolation and low insertion loss, the switching device of fig. 5 includes switching transistor devices, e.g., hemt 48, inductor L2, inductor L3, resistor R1, and power supply Vc 1. The drain D of transistor 48 is coupled to the source S via inductor L2, increasing the isolation when the transistor is off. The transistor source S is coupled/connected to ground through an inductor L3, causing Vc1 to establish a voltage at the gate terminal G.

The switching device of fig. 6 comprises a first terminal 45 and a second terminal 46. The switching device of fig. 6 is adapted to selectively provide a radio frequency coupled between the terminals 45, 46 (i.e., to selectively provide a low ohmic path for a radio frequency signal or for high ohmic isolation of a radio frequency signal). To provide this switching while achieving high switching device isolation and low insertion loss, the switching device of fig. 6 includes switching transistor devices, e.g., hemt 49 in parallel, hemt 50 in series, inductors L1 and L2, resistor R1, and power supplies Vc1 and Vc 2. The drain D of transistor 49 is coupled to the source S via inductor L1, increasing the isolation when the transistor is off. Transistor source S is coupled/connected to ground through the substrate ground hole, causing Vc1 to establish a voltage at the gate terminal G of transistor 49. The drain D of the transistor 50 is coupled to the source S via an inductor L2, improving isolation when the transistor is turned off. The transistor source S is coupled/connected to ground through an inductor L1, causing Vc2 to establish a voltage at the gate terminal G of transistor 50.

Fig. 7 is a device circuit diagram illustrating an embodiment of a four-port switch structure for substituting a switching transistor configured as in fig. 6 into the rf duplexer of fig. 1 for polarization switching, according to certain performance requirements.

The radio frequency transmission link: at the output end of the radio frequency transmitting link, a microstrip line or a power divider divides signals into two paths of signals with the same amplitude and the same phase, the two paths of signals respectively enter two groups of different switch circuits, and radio frequency signals are selectively coupled to an antenna V or an antenna H through selective opening or closing of the two switches. Therefore, the selection of the antenna polarization mode by the receiving end is completed. The source of the RF signal may be any type of circuit that generates an RF signal.

And the radio frequency receiving link: the radio frequency signal is selectively received by the antenna V or the antenna H through the selective opening or closing of the two switches, and is coupled to the input end of the destination radio frequency receiving chain. Therefore, the selection of the antenna polarization mode by the receiving end is completed. The source of the RF signal may be any type of circuit that generates an RF signal.

In view of the various changes and modifications to the switching devices described above, it should be apparent that the technology disclosed herein is not limited to any particular embodiment, and that the described embodiments are by way of example only. While the present invention has been described with reference to the illustrated embodiments, this description is not intended to be construed in a limiting sense. Various modifications and combinations of the illustrative embodiments, as well as other embodiments of the invention, will be apparent to persons skilled in the art upon reference to the description. It is therefore intended that the appended claims encompass such modifications or embodiments.

Claims

1. A switch structure with functions of transmitting and receiving switching and polarization switching is characterized in that:

the method comprises the following steps: a first RF port Tx, a second RF port Rx, a third RF port V, a fourth RF port H and pHEMT transistors, the switching states of which control the switching states of the four ports; the first RF port Tx is connected to a third RF port V and a fourth RF port H through two switches, respectively; the second RF port Rx is respectively connected with a third RF port V and a fourth RF port H through two switches;

the pHEMT transistor includes series, parallel, and series-parallel combinations, a gate voltage supply circuit configured to selectively provide a gate voltage to a gate terminal of the pHEMT transistor;

2. The switch structure with switching functions of transmission and reception and polarization according to claim 1, characterized in that: also included are inductances L1 and L2 that resonate with pHEMT transistor Cds.

3. The switch structure with switching functions of transmission and reception and polarization according to claim 2, characterized in that: also included are capacitors, inductors, resistors, and microstrip lines that impedance match, block, and provide a direct current path with the pHEMT transistor.

4. The switch structure with switching transmission and reception and polarization switching function according to claim 3, characterized in that: further comprising impedances between said first Tx, second Rx, third V and fourth H RF ports and a reference potential.

5. The switch structure with switching functions of transmission and reception and polarization according to claim 4, characterized in that: the impedance comprises a resistor having a resistance value of 50 omega.

6. The switch structure with switching functions of transmission and reception and polarization according to claim 4, characterized in that: the reference potential is ground.