CN210393746U - Electrode insulation assembly of polycrystalline silicon reduction furnace - Google Patents
Electrode insulation assembly of polycrystalline silicon reduction furnace Download PDFInfo
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- CN210393746U CN210393746U CN201920928156.4U CN201920928156U CN210393746U CN 210393746 U CN210393746 U CN 210393746U CN 201920928156 U CN201920928156 U CN 201920928156U CN 210393746 U CN210393746 U CN 210393746U
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Abstract
The utility model discloses a polycrystalline silicon reduction furnace electrode insulation subassembly, include: the first sealing element is arranged between the chassis and the electrode and is used for sealing the electrode to prevent the contact of materials in the polycrystalline silicon reduction furnace and the electrode; the second sealing element is arranged between the first sealing element and the electrode, the first sealing element is positioned at the periphery of the second sealing element, and the second sealing element is used for further sealing the electrode and preventing the materials in the polycrystalline silicon reduction furnace from contacting the electrode; the first insulating part is arranged between the chassis and the electrode, the first insulating part is used for insulating the chassis and the electrode, and at least part of the first insulating part is coated outside the first sealing part and the second sealing part. The insulating assembly improves the insulating property of the electrode and the chassis, has a good sealing effect, reduces the grounding problem caused by low insulation in the operation process of the polycrystalline silicon reduction furnace, avoids the phase loss and insulation problems caused by dust deposition in the electrode groove, and reduces the pollution near the electrode.
Description
Technical Field
The utility model belongs to the technical field of polycrystalline silicon production, concretely relates to polycrystalline silicon reduction furnace electrode insulation assembly.
Background
In the production process of polycrystalline silicon, an electrode in a polycrystalline silicon reduction furnace penetrates through a reduction furnace chassis, a silicon core is fixed on the electrode through a graphite sleeve and an insulating ceramic ring sleeve, current is conducted on the silicon core through the electrode, and the silicon core is heated, so that the temperature required by reduction chemical vapor deposition is reached. The graphite sleeve mainly plays a role in fixing the silicon core, supporting the silicon rod and conducting current by contacting with the silicon core, and the insulating ceramic ring mainly plays a role in isolating the electrode from the chassis of the reduction furnace, insulating protection and avoiding discharge.
At present, the auxiliary material cost of the polysilicon product mainly comes from two aspects, on one hand, the auxiliary material cost is mainly the use and consumption of a workshop graphite suite. Another major cause is due to ceramic ring loss. In recent two years, with the rise of silicon nitride materials, the insulating ceramic ring used in the production of polysilicon is changed from the original alumina material to the silicon nitride material. However, silicon nitride raw materials and products are difficult to process and high in cost, although the silicon nitride raw materials and products are firm in use, accidental loss still occurs in the process of cleaning the ceramic ring, and because the gap between the tetrafluoro sleeve and the electrode of the 36-pair rod reduction furnace cannot be completely eliminated through the ceramic ring, the tetrafluoro sleeve is curled in use, more impurities remain in the gap, silicon of the ceramic ring is still serious, and the ceramic ring does not have sealing performance on the chassis. Therefore, the contamination in the chassis electrode hole is serious.
SUMMERY OF THE UTILITY MODEL
The utility model aims to solve the technical problem that the above-mentioned is not enough to exist among the prior art, provide a polycrystalline silicon reduction furnace electrode insulation subassembly, avoided the scarce looks and the insulating problem that the inside deposition of electrode cell caused, reduced near the pollution of electrode.
The technical scheme who solves the utility model discloses technical problem adopts provides a polycrystalline silicon reduction furnace electrode insulation subassembly, include:
the first sealing element is arranged between the chassis and the electrode and is used for sealing the electrode to prevent the contact of materials in the polycrystalline silicon reduction furnace and the electrode;
the second sealing element is arranged between the first sealing element and the electrode, the first sealing element is positioned at the periphery of the second sealing element, and the second sealing element is used for further sealing the electrode and preventing the materials in the polycrystalline silicon reduction furnace from contacting the electrode;
the first insulating part is arranged between the chassis and the electrode, the first insulating part is used for insulating the chassis and the electrode, and at least part of the first insulating part is coated outside the first sealing part and the second sealing part, so that the first sealing part and the second sealing part are isolated from a furnace chamber of the polycrystalline silicon reduction furnace.
Preferably, at least a portion of the second sealing member is disposed around the electrode, the first sealing member is in contact with the second sealing member to form a groove, and a portion of the first insulating member is inserted into the groove.
Preferably, the bottom of the second seal overlaps the projections of the electrode side walls.
Preferably, the polysilicon reduction furnace electrode insulation assembly further comprises: and the gasket is arranged between the bottom of the second sealing piece and the protrusion of the side wall of the electrode.
Preferably, the first insulating member includes: the insulating part is arranged on the periphery of the electrode in a sleeved mode, and the supporting part is inserted into the groove.
Preferably, the insulating part is attached to the outer surface of the corresponding part of the chassis, the insulating part is attached to the outer surface of the corresponding part of the electrode, and the first sealing member and the second sealing member are arranged in a containing space surrounded by the insulating part, the chassis and the electrode.
Preferably, the first insulating member further includes: and the lug is arranged outside the side wall of the insulating part, is positioned on one side of the insulating part, which is far away from the electrode, and is used for clamping and moving the first insulating part by an operator.
Preferably, the second seal member includes: the sealing part is sleeved outside the electrode, the sealing part is attached to the outer surface of the corresponding part of the electrode, and the connecting part is in contact with the first sealing element to form a groove between the second sealing element and the first sealing element. The groove takes the connecting part as a bottom wall, the second sealing part as a side wall close to the electrode, and the first sealing part as a side wall far away from the electrode.
Preferably, the first seal is embedded within the chassis.
Preferably, the polysilicon reduction furnace electrode insulation assembly further comprises: and the second insulating part is positioned outside the first insulating part, is positioned on the base plate, and is used for isolating the first insulating part from a furnace chamber of the polycrystalline silicon reduction furnace.
Preferably, the first sealing element is made of polytetrafluoroethylene;
the second sealing element is made of polytetrafluoroethylene;
the first insulating part is made of silicon nitride;
the second insulating part is made of silicon nitride.
The utility model discloses a polycrystalline silicon reduction furnace electrode insulation assembly has not only improved the insulating properties on electrode and chassis, still has good sealed effect, has prolonged the life of first sealing member, second sealing member, has reduced the grounding problem that causes because of insulating low in the polycrystalline silicon reduction furnace operation process for the insulating ability of polycrystalline silicon reduction furnace obtains great promotion, has avoided scarce looks and the insulating problem that the inside deposition of electrode cell caused, has reduced near the pollution of electrode.
Drawings
Fig. 1 is a schematic structural view of an electrode insulation assembly of a polycrystalline silicon reduction furnace according to embodiment 2 of the present invention.
In the figure: 1-a first seal; 2-a chassis; 3-an electrode; 4-a second seal; 5-a first insulator; 6-bulge; 7-an insulating part; 8-a support; 9-a lug; 10-a sealing part; 11-a connecting portion; 12-a second insulator; 13-grooves.
Detailed Description
In order to make the technical solution of the present invention better understood by those skilled in the art, the present invention will be described in further detail with reference to the accompanying drawings and specific embodiments.
Reference will now be made in detail to embodiments of the present patent, examples of which are illustrated in the accompanying drawings, wherein like or similar reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the drawings are exemplary only for the purpose of explaining the present patent and are not to be construed as limiting the present patent.
Example 1
The embodiment provides an electrode insulation assembly of a polycrystalline silicon reduction furnace, which comprises:
the first sealing element is arranged between the chassis and the electrode and is used for sealing the electrode to prevent the contact of materials in the polycrystalline silicon reduction furnace and the electrode;
the second sealing element is arranged between the first sealing element and the electrode, the first sealing element is positioned at the periphery of the second sealing element, and the second sealing element is used for further sealing the electrode and preventing the materials in the polycrystalline silicon reduction furnace from contacting the electrode;
the first insulating part is arranged between the chassis and the electrode, the first insulating part is used for insulating the chassis and the electrode, and at least part of the first insulating part is coated outside the first sealing part and the second sealing part, so that the first sealing part and the second sealing part are isolated from a furnace chamber of the polycrystalline silicon reduction furnace.
The polycrystalline silicon reduction furnace electrode insulation assembly of the embodiment not only improves the insulation performance of the electrode and the chassis, but also has a good sealing effect, prolongs the service lives of the first sealing piece and the second sealing piece, and reduces the grounding problem caused by low insulation in the operation process of the polycrystalline silicon reduction furnace, so that the insulation capacity of the polycrystalline silicon reduction furnace is greatly improved, the problems of phase loss and insulation caused by dust deposition in an electrode groove are avoided, and the pollution near the electrode is reduced.
Example 2
As shown in fig. 1, the present embodiment provides an electrode insulation assembly for a polysilicon reduction furnace, comprising:
the first sealing element 1 is arranged between the chassis 2 and the electrode 3, and the first sealing element 1 is used for sealing the electrode 3 and preventing materials in the polycrystalline silicon reduction furnace from contacting the electrode 3;
the second sealing element 4 is arranged between the first sealing element 1 and the electrode 3, the first sealing element 1 is positioned at the periphery of the second sealing element 4, and the second sealing element 4 is used for further sealing the electrode 3 and preventing materials in the polycrystalline silicon reduction furnace from contacting with the electrode 3;
the first insulating part 5 is arranged between the chassis 2 and the electrode 3, the first insulating part 5 is used for insulating the chassis 2 and the electrode 3, and at least part of the first insulating part 5 is coated outside the first sealing part 1 and the second sealing part 4, so that the first sealing part 1 and the second sealing part 4 are isolated from a furnace chamber of the polycrystalline silicon reduction furnace.
It should be noted that in this embodiment, at least a portion of the second sealing member 4 is disposed outside the electrode 3, the first sealing member 1 is in contact with the second sealing member 4 to form a groove 13, and a portion of the first insulating member 5 is inserted into the groove 13.
Note that the bottom of the second sealing member 4 in this embodiment overlaps the projection 6 on the side wall of the electrode 3.
It should be noted that, the electrode insulation assembly of the polycrystalline silicon reduction furnace in this embodiment further includes: and a gasket disposed between the bottom of the second sealing member 4 and the protrusion 6 of the sidewall of the electrode 3.
Note that, the first insulating member 5 in the present embodiment includes: the insulating part 7 and the supporting part 8 connected with the insulating part 7 are sleeved on the periphery of the electrode 3, and the supporting part 8 is inserted into the groove 13. The first insulating member 5 serves as an insulator and a seal, and the supporting portion 8 of the lower portion of the first insulating member 5 is inserted into the recess 13 and the insulating portion 7 of the upper portion abuts against the electrode 3 and the base plate 2.
In the present embodiment, the insulating portion 7 is attached to the outer surface of the portion corresponding to the chassis 2, the insulating portion 7 is attached to the outer surface of the portion corresponding to the electrode 3, and the first seal 1 and the second seal 4 are in the accommodating space surrounded by the insulating portion 7, the chassis 2, and the electrode 3. Specifically, the inner side of the insulating part 7 in this embodiment is closely attached to the outer surface of the corresponding portion of the electrode 3, and the bottom wall of the insulating part 7 is closely attached to the outer surface of the corresponding portion of the chassis 2, so that the heat insulation and insulation effects are achieved.
Note that, the first insulating member 5 in the present embodiment further includes: and the lug 9 is arranged outside the side wall of the insulating part 7, the lug 9 is positioned on the side, away from the electrode 3, outside the side wall of the insulating part 7, and the lug 9 is used for clamping and moving the first insulating part 5 by an operator.
Note that, the second seal 4 in the present embodiment includes: the electrode comprises a sealing part 10 and a connecting part 11 connected with the sealing part 10, the sealing part 10 is sleeved outside the electrode 3, the sealing part 10 is attached to the outer surface of the corresponding part of the electrode 3, the connecting part 11 is in contact with the first sealing member 1, and a groove 13 is formed between the second sealing member 4 and the first sealing member 1. The groove 13 has the connecting portion 11 as a bottom wall, the second sealing portion 10 as a side wall close to the electrode 3, and the first sealing member 1 as a side wall away from the electrode 3. Specifically, the supporting portion 8 in this embodiment is tightly attached to the inner wall of the groove 13, and the gap between the electrode 3 and the chassis 2 is thoroughly insulated and sealed, so that the liquid material and the silicon powder in the furnace chamber of the polycrystalline silicon reduction furnace are prevented from entering the gap between the electrode 3 and the chassis 2 and entering the electrode groove where the electrode 3 is located, the sealing performance of the insulating assembly of the electrode 3 is improved, and the reduction of the insulating property is prevented. The second sealing member 4 is placed in the electrode groove, abuts against the electrode 3 and the first insulating member 5, and mainly plays a role in sealing and insulating.
Note that the first seal member 1 in the present embodiment is embedded in the chassis 2.
It should be noted that, the electrode insulation assembly of the polycrystalline silicon reduction furnace in this embodiment further includes: and a second insulator 12 positioned outside the first insulator 5, the second insulator 12 being positioned on the base plate 2, the head of the electrode 3 protruding from the second insulator 12, the second insulator 12 being used to isolate the first insulator 5 from the chamber of the polycrystalline silicon reduction furnace. Specifically, the second insulating member 12 in this embodiment is annular, has a thickness of 10mm, and is used at the outermost side of the electrode 3 to isolate external radiant heat, thereby protecting the internal structure. The second insulating member 12 insulates the radiant heat in the polycrystalline silicon reduction furnace, reduces the silicon junction formed by the direct action of the heat on the first insulating member 5, and reduces the cleaning times of the first insulating member 5. Since the second insulating member 12 is located far from the silicon rod, it can be used continuously in the case of less serious silicon deposition, and the increased thickness of the second insulating member 12 reflects more heat, thereby reducing the number of cleaning operations.
Due to the reduction of the cleaning times of the first insulating part 5 and the second insulating part 12, the time required for replacing the first insulating part 5 and the second insulating part 12 is further reduced, thereby achieving the purpose of reducing the off-line time of the polycrystalline silicon reduction furnace.
In the present embodiment, the first sealing member 1 is made of polytetrafluoroethylene, and has a purity of 99.99% or more and a surface roughness ra0.8;
the second sealing element 4 is made of polytetrafluoroethylene, the purity is over 99.99 percent, and the surface roughness is Ra0.8;
the first insulating part 5 is made of silicon nitride, the purity is more than 99.99%, and the surface roughness Ra0.8;
the second insulating member 12 is made of silicon nitride, and has a purity of 99.99% or more and a surface roughness ra0.8.
The method for installing the electrode insulation assembly of the polycrystalline silicon reduction furnace in the embodiment comprises the following steps:
(1) and cleaning the chassis 2, removing impurities in the electrode tank, and blowing the impurities clean by compressed air.
(2) The second seal 4, the first insulator 5, the first seal 1 were removed from the package and wiped once with dry white cloth dipped in absolute ethanol.
(3) After drying, the first sealing element 1 is firstly installed, then the second sealing element 4 is installed, and then the first insulating element 5 is sleeved in sequence, and the first insulating element 5 can be vertically tapped from top to bottom by using a rubber hammer, so that sufficient contact is ensured without gaps.
(4) The second insulator 12 is fitted over, and the second insulator 12 is adjusted to be concentric with the electrode 3.
And (4) repeating the steps (1), (2), (3) and (4) until the whole furnace electrode 3 is completely filled.
The polycrystalline silicon reduction furnace electrode insulation assembly of the embodiment not only improves the insulation performance of the electrode 3 and the chassis 2, but also has a good sealing effect, prolongs the service lives of the first sealing element 1 and the second sealing element 4, and reduces the grounding problem caused by low insulation in the operation process of the polycrystalline silicon reduction furnace, so that the insulation capacity of the polycrystalline silicon reduction furnace is greatly improved, the problems of phase loss and insulation caused by dust deposition in an electrode groove are avoided, and the pollution near the electrode 3 is reduced.
It is to be understood that the above embodiments are merely exemplary embodiments that have been employed to illustrate the principles of the present invention, and that the present invention is not limited thereto. It will be apparent to those skilled in the art that various modifications and improvements can be made without departing from the spirit and substance of the invention, and these modifications and improvements are also considered to be within the scope of the invention.
Claims (10)
1. An electrode insulation assembly of a polysilicon reduction furnace, which is characterized by comprising:
the first sealing element is arranged between the chassis and the electrode and is used for sealing the electrode to prevent the contact of materials in the polycrystalline silicon reduction furnace and the electrode;
the second sealing element is arranged between the first sealing element and the electrode, the first sealing element is positioned at the periphery of the second sealing element, and the second sealing element is used for further sealing the electrode and preventing the materials in the polycrystalline silicon reduction furnace from contacting the electrode;
the first insulating part is arranged between the chassis and the electrode, the first insulating part is used for insulating the chassis and the electrode, and at least part of the first insulating part is coated outside the first sealing part and the second sealing part, so that the first sealing part and the second sealing part are isolated from a furnace chamber of the polycrystalline silicon reduction furnace.
2. The polycrystalline silicon reduction furnace electrode insulation assembly of claim 1, wherein at least a portion of the second sealing member is disposed around the electrode, the first sealing member is in contact with the second sealing member to form a groove, and a portion of the first insulating member is inserted into the groove.
3. The polycrystalline silicon reduction furnace electrode insulation assembly according to claim 1 or 2, wherein a bottom of the second sealing member is overlapped on the projection of the electrode sidewall.
4. The polycrystalline silicon reduction furnace electrode insulation assembly of claim 3, further comprising: and the gasket is arranged between the bottom of the second sealing piece and the protrusion of the side wall of the electrode.
5. The polycrystalline silicon reduction furnace electrode insulation assembly of claim 2, wherein the first insulator comprises: the insulating part is arranged on the periphery of the electrode in a sleeved mode, and the supporting part is inserted into the groove.
6. The polycrystalline silicon reduction furnace electrode insulation assembly according to claim 5, wherein the insulation portion is attached to an outer surface of a corresponding portion of the base plate, the insulation portion is attached to an outer surface of a corresponding portion of the electrode, and the first sealing member and the second sealing member are located in a containing space defined by the insulation portion, the base plate and the electrode.
7. The polycrystalline silicon reduction furnace electrode insulation assembly of claim 5, wherein the first insulator further comprises: and the lug is arranged outside the side wall of the insulating part, is positioned on one side of the insulating part, which is far away from the electrode, and is used for clamping and moving the first insulating part by an operator.
8. The polycrystalline silicon reduction furnace electrode insulation assembly of claim 2, wherein the second seal comprises: the sealing part is sleeved outside the electrode, the sealing part is attached to the outer surface of the corresponding part of the electrode, and the connecting part is in contact with the first sealing element to form a groove between the second sealing element and the first sealing element.
9. The polycrystalline silicon reduction furnace electrode insulation assembly according to any one of claims 1, 2 and 4 to 8, wherein the first sealing member is embedded in the bottom plate.
10. The polycrystalline silicon reduction furnace electrode insulation assembly according to any one of claims 1, 2 and 4 to 8, further comprising: and the second insulating part is positioned outside the first insulating part, is positioned on the base plate, and is used for isolating the first insulating part from a furnace chamber of the polycrystalline silicon reduction furnace.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920928156.4U CN210393746U (en) | 2019-06-19 | 2019-06-19 | Electrode insulation assembly of polycrystalline silicon reduction furnace |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920928156.4U CN210393746U (en) | 2019-06-19 | 2019-06-19 | Electrode insulation assembly of polycrystalline silicon reduction furnace |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN210393746U true CN210393746U (en) | 2020-04-24 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201920928156.4U Active CN210393746U (en) | 2019-06-19 | 2019-06-19 | Electrode insulation assembly of polycrystalline silicon reduction furnace |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN210393746U (en) |
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2019
- 2019-06-19 CN CN201920928156.4U patent/CN210393746U/en active Active
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Effective date of registration: 20210830 Address after: 831500 No. 2249, Zhongxin street, ganquanbao economic and Technological Development Zone (Industrial Park), Urumqi City, Xinjiang Uygur Autonomous Region Patentee after: Xinjiang Xinte Crystal Silicon High Tech Co.,Ltd. Address before: 830011 ganquanbao high tech Industrial Park, Urumqi national high tech Industrial Development Zone (new urban area) of Xinjiang Uygur Autonomous Region Patentee before: XINTE ENERGY Co.,Ltd. |