CN210314481U - Graphite plate and matched substrate thereof - Google Patents
Graphite plate and matched substrate thereof Download PDFInfo
- Publication number
- CN210314481U CN210314481U CN201921220024.2U CN201921220024U CN210314481U CN 210314481 U CN210314481 U CN 210314481U CN 201921220024 U CN201921220024 U CN 201921220024U CN 210314481 U CN210314481 U CN 210314481U
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- substrate
- upper layer
- wafer
- groove
- graphite
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- 239000000758 substrate Substances 0.000 title claims abstract description 83
- OKTJSMMVPCPJKN-UHFFFAOYSA-N Carbon Chemical compound [C] OKTJSMMVPCPJKN-UHFFFAOYSA-N 0.000 title claims abstract description 39
- 229910002804 graphite Inorganic materials 0.000 title claims abstract description 39
- 239000010439 graphite Substances 0.000 title claims abstract description 39
- 229910052702 rhenium Inorganic materials 0.000 claims description 6
- WUAPFZMCVAUBPE-UHFFFAOYSA-N rhenium atom Chemical compound [Re] WUAPFZMCVAUBPE-UHFFFAOYSA-N 0.000 claims description 6
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims description 6
- 229910052721 tungsten Inorganic materials 0.000 claims description 6
- 239000010937 tungsten Substances 0.000 claims description 6
- 238000000429 assembly Methods 0.000 claims description 2
- 230000000712 assembly Effects 0.000 claims description 2
- 239000004065 semiconductor Substances 0.000 abstract description 3
- 239000000463 material Substances 0.000 description 4
- 239000007789 gas Substances 0.000 description 3
- 150000002736 metal compounds Chemical class 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 238000006243 chemical reaction Methods 0.000 description 2
- 238000013461 design Methods 0.000 description 2
- 238000003825 pressing Methods 0.000 description 2
- 230000008569 process Effects 0.000 description 2
- 239000000126 substance Substances 0.000 description 2
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 description 1
- 230000002159 abnormal effect Effects 0.000 description 1
- 230000009471 action Effects 0.000 description 1
- 230000004075 alteration Effects 0.000 description 1
- 238000005229 chemical vapour deposition Methods 0.000 description 1
- 238000011161 development Methods 0.000 description 1
- 230000000694 effects Effects 0.000 description 1
- 238000005286 illumination Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 239000007769 metal material Substances 0.000 description 1
- 150000002739 metals Chemical class 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000011160 research Methods 0.000 description 1
- 229910052594 sapphire Inorganic materials 0.000 description 1
- 239000010980 sapphire Substances 0.000 description 1
- 239000007787 solid Substances 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 239000010936 titanium Substances 0.000 description 1
- 229910052719 titanium Inorganic materials 0.000 description 1
Images
Abstract
The utility model belongs to luminous semiconductor device field especially relates to a graphite plate and supporting substrate thereof, and the graphite plate includes a plurality of wafer recesses that are used for placing the substrate, and the side of substrate is provided with the draw-in groove, and the top periphery of wafer recess is provided with upper assembly, and at least one side of upper assembly bottom is located the lateral wall of wafer recess, is equipped with the side direction subassembly that is used for fixed substrate on the upper assembly, and the side direction subassembly is extending structure, and the side direction subassembly inlays in the draw-in groove of substrate. The utility model discloses the influence of centrifugal force to the substrate has been reduced for the unable perk of substrate when growing, or the angle is less when the perk, can not disturb the air current model of graphite quotation, obtains the film source of better homogeneity, improves the yield.
Description
Technical Field
The utility model belongs to luminous semiconductor device field especially relates to a graphite plate and supporting substrate thereof to reduce the perk angle of substrate, improve the homogeneity of film source wavelength.
Background
A Light Emitting Diode (abbreviated as LED) is a solid semiconductor Diode Light Emitting device and is widely used in illumination fields such as indicator lights and display screens. The method for manufacturing the LED wafer at the present stage is mainly realized by Metal-organic Chemical Vapor Deposition (MOCVD), and the flow can be briefly described as follows: an epitaxial Wafer substrate (such as a sapphire substrate/a Si substrate) is placed on a groove of a graphite carrier plate (Wafer carrier), the graphite carrier plate is conveyed into an MOCVD reaction chamber together, the temperature of the reaction chamber is heated to a set temperature, and an organic metal compound and a group V gas are introduced to break chemical bonds on the Wafer substrate and polymerize again to form an LED epitaxial layer.
With the development of LEDs, especially Mirco LEDs and Mini LED concepts in recent years, wavelength uniformity is becoming more and more important, and for this reason, Aixtron machines grown at low rotation speed are becoming good machines in the market due to uniformity advantages, but cost disadvantages are caused due to low utilization rate of machines, and in this respect, Veeco corporation in the united states and micro-manufacturers in domestic industry have obvious advantages. However, the Veeco machine and the micro-machine have obvious windward problems and influence on the wavelength uniformity. The high-speed rotation (200-1200 RPM) is mainly used for the two models, when the two models rotate at high speed, the region of the substrate close to the center of the graphite plate can tilt due to the action of centrifugal force, so that the temperature of the region is low, the wavelength is long, and the STD deviation is caused.
Therefore, it is necessary to research and design a graphite disc and its supporting substrate.
Disclosure of Invention
An object of the utility model is to provide a graphite plate and supporting substrate thereof to solve among the above-mentioned background art the high-speed rotation in the board of piece source, receive the warpage that the effect of centrifugal force leads to, influence the problem of piece source homogeneity.
In order to achieve the above object, the utility model provides a following technical scheme: the utility model provides a graphite plate and supporting substrate thereof, graphite plate include a plurality of wafer recesses that are used for placing the substrate, the side of substrate is provided with the draw-in groove, and the top periphery of wafer recess is provided with upper assembly, and at least one side of upper assembly bottom is located the lateral wall of wafer recess, is equipped with the side direction subassembly that is used for fixed substrate on the upper assembly, and the side direction subassembly is extending structure, and the side direction subassembly inlays in the draw-in groove of substrate.
Preferably, the upper assembly is provided in plurality at each wafer groove.
Preferably, a plurality of the upper layer assemblies are connected into an integral structure, and the connected part does not shield the wafer groove.
Preferably, the upper layer assembly is of an inverted concave structure, two adjacent wafer grooves share one upper layer assembly, and the concave surface of the upper layer assembly is tightly attached to the inner walls of the wafer grooves and the surface of the graphite disc.
Preferably, the upper layer assembly is further provided with a fixing hole and a fixing part, and the fixing part is inserted into the fixing hole to fix the upper layer assembly on the graphite plate.
Preferably, the bottom side of the upper assembly is provided with a fixing groove.
Preferably, the lateral assembly includes a fixing block inserted into the fixing groove and a protrusion connected to the fixing block, the protrusion being matched with the clamping groove of the substrate.
Preferably, the protrusion is of an elastic sheet structure.
Preferably, an elastic structure capable of stretching left and right is arranged between the fixing block and the protrusion.
Preferably, the protrusions are arranged at intervals or are in a ring structure distributed along the side wall of the wafer groove.
Preferably, the bumps are rhenium bumps or tungsten bumps.
The utility model discloses it is main to be directed to the substrate when high-speed rotation, lead to the warpage of substrate central zone because of centrifugal force, central zone's temperature is lower, influences the problem of the wavelength of film source. The lateral component is arranged and the clamping groove is formed in the side face of the substrate, the protrusion of the lateral component is embedded into the clamping groove of the substrate, the substrate is fixed, the influence of centrifugal force on the substrate is reduced, the substrate cannot tilt when growing, or the angle is small when tilting, an airflow model of a graphite disc surface cannot be interfered, the occurrence of the abnormal phenomenon of the wavelength of the windward side is reduced, a film source with good uniformity is obtained, and the yield is improved.
Drawings
FIG. 1 is a schematic view of the graphite plate and the substrate of the present invention.
Fig. 2 is a top view of the graphite plate and the substrate according to the present invention.
The attached drawings are marked as follows: 1. an upper layer assembly; 2. a lateral assembly; 21. a fixed block; 22. a protrusion; 3. a wafer groove; 4. a graphite plate; 5. a boss; 6. a substrate; 61. a card slot; 7. and a fixing component.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are only some embodiments of the present invention, not all embodiments. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative work belong to the protection scope of the present invention.
Referring to the attached drawing 1, the utility model provides a pair of graphite plate and supporting substrate thereof, graphite plate 4 includes a plurality of wafer recess 3 that are used for placing substrate 6, substrate 6's side is provided with draw-in groove 61, and wafer recess 3's top periphery is provided with upper assembly 1, and at least one side of upper assembly 1 bottom is located wafer recess 3's lateral wall, is equipped with the side direction subassembly 2 that is used for fixed substrate 6 on the upper assembly 1, and side direction subassembly 2 is extending structure, and side direction subassembly 2 inlays in the draw-in groove 61 of substrate 6.
The upper layer assembly 1 can be arranged in a plurality of positions of each wafer groove 3, one side of the bottom of the upper layer assembly 1 is located on the side wall of each wafer groove 3, one side of the bottom of the upper layer assembly 1 is provided with a fixing groove, and a lateral assembly 2 is arranged in each fixing groove. The side assembly 2 includes a fixing block 21 and a protrusion 22, the fixing block 21 is inserted into the fixing groove, and the protrusion 22 is coupled to the fixing block 21.
Wherein, the material of the bump 22 may be rhenium or tungsten or other high temperature resistant material. If the protrusion 22 is elastic, i.e. the protrusion 22 is a spring structure, the protrusion 22 may be a ring structure or a bump distributed along the sidewall of the wafer recess 3. When the substrate 6 is placed, the protrusion 22 itself is deformed by contacting and pressing the protrusion 22, and is thereby inserted into the card slot 61 of the substrate 6, and after the substrate 6 is taken out, the protrusion 22 is restored to the original state; if the protrusion 22 itself has no elasticity, the protrusion 22 may be only a protrusion, and an elastic structure capable of stretching left and right needs to be added between the fixing block 21 and the protrusion 22, and the elastic structure may be a spring structure. When the substrate 6 is placed, the elastic structure is deformed and retracted by contacting and pressing the protrusion 22, so that the protrusion 22 can be embedded into the slot 61 of the substrate 6, and after the substrate 6 is taken out, the elastic structure is restored to the original state. The projections 22 are adapted to the recesses 61 of the substrate 6, so that the projections 22 engage in the recesses 61 of the substrate 6 and the substrate 6 is held by the lateral component 2.
Referring to fig. 2, two adjacent wafer grooves 3 may share one upper assembly 1, and the upper assembly 1 has an inverted concave structure. The concave surface of the upper layer assembly 1 is tightly attached to the inner wall of the wafer groove 3 and the surface of the graphite disc 4, the two sides of the bottom of the upper layer assembly 1 are respectively positioned on the side walls of the two different wafer grooves 3, the two sides of the bottom of the upper layer assembly 1 are respectively provided with a fixing groove, and the side direction assembly 2 is arranged in the fixing grooves to fix the substrate. In the figure, the protrusions 22 of the lateral component 2 are elastic ring structures distributed along the side wall of the wafer groove 3, and the ring structures are embedded into the clamping grooves 61 of the substrate to realize a fixing function.
In addition, a plurality of upper assembly 1 can be made into an integral structure through fixed connecting pieces, and the connected part does not shield the wafer groove 3, so that the influence on the epitaxial growth of the substrate 6 is avoided.
The utility model discloses an upper assembly 1 is detachable, is equipped with fixed orifices and fixed part 7 on the upper assembly 1, through inserting fixed part 7 in the fixed orifices for upper assembly 1 fixes on graphite plate 4.
The thickness of the substrate 6 of the utility model is equal to or more than 500 μm, and the height of the clamping groove 61 of the substrate 6 is more than 100 μm and less than the thickness of the substrate. The thickness of the substrate 6 is usually 300-1300 μm, the warp of the substrate 6 is generally about 100 μm, and the design is mainly directed to the substrate 6 with a height of 500 μm or more, so the groove height is guaranteed to be 100 μm or more. The substrate 6 is placed on the boss 5 in the wafer groove 3, the boss 5 is used for supporting the substrate 6, the boss 5 is arranged at the bottom of the wafer groove 3 and distributed at the edge of the wafer groove 3, and a distance is formed between the bottom surface of the substrate 6 and the bottom of the wafer groove 3.
The material of the upper component 1 and the lateral component 2 is a high-temperature resistant metal material, such as rhenium and tungsten. Tungsten and rhenium have high hardness and high melting point and are high-temperature-resistant metals, and the materials are adopted to avoid accidents caused by the influence of high temperature in the epitaxial growth process. Meanwhile, pure rhenium or tungsten is avoided, and a small amount of titanium needs to be doped, so that brittleness is reduced.
The working process is as follows: clamping grooves 61 are machined in the side face of a substrate 6 for growth through laser, during epitaxial growth, the substrate 6 is placed in a wafer groove 3 of a graphite disc 4, protrusions 22 of a lateral component 2 are embedded into the clamping grooves 61 in the side face of the substrate 6, the substrate 6 is fixed, the substrate 6 rotates along with rotation of the graphite disc 4, and when the substrate is heated, organic metal compounds and five-group gases are introduced in a matched mode, so that the organic metal compounds and the five-group gases break chemical bonds on the substrate 6 and are polymerized again to form an LED epitaxial layer.
Although embodiments of the present invention have been shown and described, it will be appreciated by those skilled in the art that changes, modifications, substitutions and alterations can be made in these embodiments without departing from the principles and spirit of the invention, the scope of which is defined in the appended claims and their equivalents.
Claims (11)
1. The utility model provides a graphite plate and supporting substrate thereof, graphite plate include a plurality of wafer recesses that are used for placing the substrate, its characterized in that: the side of the substrate is provided with a clamping groove, the periphery of the top of the wafer groove is provided with an upper layer assembly, at least one side of the bottom of the upper layer assembly is located on the side wall of the wafer groove, the upper layer assembly is provided with a lateral assembly used for fixing the substrate, the lateral assembly is of a telescopic structure, and the lateral assembly is embedded in the clamping groove of the substrate.
2. A graphite disk and its associated substrate as claimed in claim 1, wherein: the upper layer assembly is provided in plurality at each wafer groove.
3. A graphite disk and its associated substrate as claimed in claim 1, wherein: the upper layer assemblies are connected into an integral structure, and the wafer grooves are not shielded by the connected parts.
4. A graphite disk and its associated substrate as claimed in claim 1, wherein: the upper layer assembly is of an inverted concave structure, two adjacent wafer grooves share one upper layer assembly, and the concave surface of the upper layer assembly is tightly attached to the inner walls of the wafer grooves and the surface of the graphite plate.
5. A graphite disk and its associated substrate as claimed in claim 1, wherein: the upper layer assembly is also provided with a fixing hole and a fixing part, and the fixing part is inserted into the fixing hole to fix the upper layer assembly on the graphite plate.
6. A graphite disk and its associated substrate as claimed in claim 1, wherein: and the side surface of the bottom of the upper layer assembly is provided with a fixing groove.
7. A graphite disk and its associated substrate as claimed in claim 1, wherein: the lateral component comprises a fixing block inserted into the fixing groove and a protrusion connected with the fixing block, and the protrusion is matched with the clamping groove of the substrate.
8. A graphite disk and its associated substrate as claimed in claim 7, wherein: the bulges are elastic sheet structures with elasticity.
9. A graphite disk and its associated substrate as claimed in claim 7, wherein: and an elastic structure capable of stretching left and right is arranged between the fixed block and the bulge.
10. A graphite disk and its associated substrate as claimed in claim 7, wherein: the bulges are arranged at intervals or are in circular ring structures distributed along the side wall of the wafer groove.
11. A graphite disk and its associated substrate as claimed in claim 7, wherein: the bumps are rhenium bumps or tungsten bumps.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921220024.2U CN210314481U (en) | 2019-07-31 | 2019-07-31 | Graphite plate and matched substrate thereof |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921220024.2U CN210314481U (en) | 2019-07-31 | 2019-07-31 | Graphite plate and matched substrate thereof |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN210314481U true CN210314481U (en) | 2020-04-14 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201921220024.2U Active CN210314481U (en) | 2019-07-31 | 2019-07-31 | Graphite plate and matched substrate thereof |
Country Status (1)
| Country | Link |
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| CN (1) | CN210314481U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112687609A (en) * | 2020-12-25 | 2021-04-20 | 至芯半导体(杭州)有限公司 | Method for growing AlN epitaxial layer by using graphite disc and substrate and graphite disc |
-
2019
- 2019-07-31 CN CN201921220024.2U patent/CN210314481U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112687609A (en) * | 2020-12-25 | 2021-04-20 | 至芯半导体(杭州)有限公司 | Method for growing AlN epitaxial layer by using graphite disc and substrate and graphite disc |
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