CN210272273U

CN210272273U - Heating structure and semiconductor processing apparatus

Info

Publication number: CN210272273U
Application number: CN201921360343.3U
Authority: CN
Inventors: 于海涛
Original assignee: Changxin Memory Technologies Inc
Current assignee: Changxin Memory Technologies Inc
Priority date: 2019-08-20
Filing date: 2019-08-20
Publication date: 2020-04-07
Anticipated expiration: 2029-08-20

Abstract

The utility model relates to a semiconductor manufacturing technical field especially relates to a heating structure and semiconductor processing apparatus. The heating structure includes: a duct for conveying the compressed dry gas; an air amplifier, communicated with the output end of the pipeline, for amplifying the compressed dry gas; and the heater is connected with the air amplifier and is used for transmitting the amplified drying gas to the surface of the object to be heated after heating. The utility model discloses avoid the damage to semiconductor processing apparatus inner structure, and then when guaranteeing that the semiconductor processing procedure goes on smoothly, also improved semiconductor processing apparatus's life.

Description

Heating structure and semiconductor processing apparatus

Technical Field

The utility model relates to a semiconductor manufacturing technical field especially relates to a heating structure and semiconductor processing apparatus.

Background

Currently, the semiconductor Integrated Circuit (IC) industry has experienced exponential growth. Technological advances in IC materials and design have resulted in generations of ICs where each generation of ICs has smaller and more complex circuits than previous generations of ICs. In the course of IC evolution, functional density (i.e., the number of interconnected devices per chip area) has generally increased, while geometry (i.e., the smallest component that can be produced using a fabrication process) has decreased. In addition to IC components becoming smaller and more complex, the wafers on which the ICs are fabricated are becoming larger and larger, which places higher demands on the quality of the wafers.

In a manufacturing process of a semiconductor device such as a Dynamic Random Access Memory (DRAM), etching is a crucial step. The existing Etching process mainly includes two modes of Wet Etching (Wet Etching) and Dry Etching (Dry Etching). Dry etching generally refers to an etching technique for performing Pattern Transfer (Pattern Transfer) by generating plasma containing charged particles such as ions and electrons, and neutral atoms, molecules, and radicals having high chemical activity by Glow Discharge (Glow Discharge) method.

However, in the process of performing the etching process by the conventional etching machine, the shielding window (window) at the top of the reaction chamber is often heated, but the conventional heating method is very likely to cause the burning loss of the components inside the etching machine, which affects the smooth proceeding of the subsequent process, thereby reducing the production efficiency of the semiconductor.

Therefore, how to avoid damage to the components inside the etching machine during the etching process performed by the etching machine is a technical problem to be solved urgently at present.

SUMMERY OF THE UTILITY MODEL

The utility model provides a heating structure and semiconductor processing apparatus for solve the problem that current heating structure easily causes the damage to the inside components and parts of board.

In order to solve the above problem, the utility model provides a heating structure, include:

a duct for conveying the compressed dry gas;

an air amplifier, communicated with the output end of the pipeline, for amplifying the compressed dry gas;

and the heater is connected with the air amplifier and is used for transmitting the amplified drying gas to the surface of the object to be heated after heating.

Preferably, the drying gas is air.

Preferably, the air amplifier includes:

the drainage cavity is provided with a second air inlet which is communicated with outside air, and the amplification cavity is provided with an air outlet;

a first gas inlet in communication with the conduit for delivering the compressed dry gas to the amplification chamber, the dry gas for establishing a low pressure to cause the drainage chamber to introduce the ambient gas into the amplification chamber through the second gas inlet;

the gas outlet is connected with the heater and used for transmitting the amplified drying gas to the heater.

Preferably, the second air inlet and the air outlet are distributed on two opposite sides of the drainage cavity and the amplification cavity in the axial direction of the drainage cavity and the amplification cavity; the first gas inlet is located in a radial direction of the amplification chamber.

Preferably, the method further comprises the following steps:

the input end of the first three-way valve is communicated with an air source, the first output end of the first three-way valve is connected with a pressure switch, and the second output end of the first three-way valve is communicated with the input end of the pipeline;

the gas source is used for storing the compressed dry gas, and the pressure switch is used for detecting the pressure of the compressed dry gas entering the pipeline.

Preferably, the method further comprises the following steps:

and the regulating valve is arranged between the second output end of the first three-way valve and the pipeline and is used for regulating the flow rate of the compressed dry gas entering the pipeline.

Preferably, the number of the pipes and the number of the air amplifiers are two, and the air amplifier further comprises:

the second three-way valve is installed between the second output end of the first three-way valve and the pipeline, the input end of the second three-way valve is connected with the second output end of the first three-way valve, and the first output end of the second three-way valve and the second output end of the second three-way valve are respectively communicated with two pipelines which are respectively connected with an air amplifier.

Preferably, the method further comprises the following steps:

and the flow meter is connected with the regulating valve and used for detecting the flow rate of the compressed dry gas flowing through the regulating valve.

Preferably, the method further comprises the following steps:

a sensor connected with the regulating valve and used for detecting the temperature of the object to be heated and transmitting the temperature to the regulating valve;

the regulating valve adjusts the flow rate of the compressed dry gas entering the duct according to the temperature of the object to be heated.

Preferably, the air amplifier further comprises an annular airflow chamber located at the periphery of the amplification chamber, and the dry gas input by the pipeline through the first gas inlet enters the amplification chamber after passing through the annular airflow chamber.

In order to solve the above problem, the present invention also provides a semiconductor processing apparatus, including:

a heating structure as claimed in any one of the preceding claims.

The utility model provides a heating structure and semiconductor processing apparatus, through setting up air amplifier and with the pipeline of air amplifier intercommunication utilizes air amplifier transmits to the heater after amplifying dry gas to in take the heat to the surface of the object of waiting to heat fast, when realizing treating the object of heating fast heating, avoided the damage to semiconductor processing apparatus inner structure, and then when guaranteeing that the semiconductor processing procedure goes on smoothly, also improved semiconductor processing apparatus's life.

Drawings

FIG. 1 is a schematic view of a heating structure according to an embodiment of the present invention;

FIG. 2A is a schematic diagram of a delivery path for compressed dry gas from a gas source to a pipeline in accordance with an embodiment of the present invention;

FIG. 2B is a schematic view of another delivery path for compressed dry gas from a gas source to a pipeline in accordance with an embodiment of the present invention;

FIG. 3 is a schematic structural view of a heating structure heating and shielding a window according to an embodiment of the present invention;

fig. 4 is a flow chart of a heating method according to an embodiment of the present invention.

Detailed Description

The following describes in detail a heating structure and a semiconductor processing apparatus according to embodiments of the present invention with reference to the accompanying drawings.

In the current semiconductor etching machine, a fan arranged behind a heater is generally used for blowing gas when rotating, so that heat generated by the heater is brought to the surface of a shielding window, and the shielding window is heated. However, this heating method has two disadvantages: on one hand, the fan has a certain service life, and when the service life of the fan is up, the machine needs to be stopped to replace the fan, so that the productivity of the machine is reduced; on the other hand, the blowing efficiency of the fan is low, the temperature of the heater during working is high, for example, the heater can quickly heat the shielding window to about 120 ℃, some components such as cables in the machine table do not have high temperature resistance, the components in the etching machine table are easy to break down or even burn out due to the blowing mode of the fan, and black solid particles generated during burning out can pollute other component structures in the etching machine table.

In order to prevent to cause the damage to the inside components and parts of board, avoid influencing the board productivity, improve the heating efficiency who shields the window simultaneously, this embodiment provides a heating structure, and figure 1 is the utility model discloses heating structure's schematic diagram among the embodiment. As shown in fig. 1, the heating structure provided by the present embodiment includes:

a duct 10 for conveying the compressed drying gas;

an air amplifier 11, which is communicated with the output end of the pipeline 10 and is used for amplifying the compressed dry gas;

and a heater 16 connected to the air amplifier 11 for heating the amplified dry gas and transferring the heated dry gas to a surface of an object to be heated.

In the present embodiment, the amplification of the dry gas means that the flow rate and/or flow velocity of the dry gas from the duct 10 is increased. Specifically, when the object to be heated needs to be heated, the duct 10 transmits a small amount of the compressed dry gas to the air amplifier 11, the air amplifier 11 sucks a large amount of outside air by using the coanda effect and transmits the air to the surface of the heater 16, and the temperature of the amplified dry gas increases as it flows through the heater 16. The drying gas having an increased temperature is again transferred to the surface of an object to be heated (e.g., a shield window), and heating of the object to be heated is achieved by heat exchange. The pressure of the compressed drying gas conveyed in the pipe 10 can be selected by the skilled person according to the actual needs, for example according to the temperature of the object to be heated.

In the specific embodiment, the heat of the heater is taken away in a mode of amplifying gas by the air amplifier, the frequency of halt and replacement of parts in the heating structure is reduced, the service lives of the heating structure and the semiconductor etching device are prolonged, and the productivity of a machine table is improved. Moreover, the mode that a large amount of amplified gas rapidly flows through the heater 16 is adopted, so that the heat of the heater 16 can be rapidly taken away, on one hand, the burning loss of other structural parts and the pollution to other structural parts caused by overhigh temperature of the heater are avoided, and the service life of the etching machine is prolonged; on the other hand, the mode of blowing a large amount of gas is beneficial to uniformly heating the object to be heated (such as a shielding window), so that the etching quality can be effectively improved, and the yield of the semiconductor device is improved.

The specific type of the drying gas can be selected by the skilled person according to the actual need. In order to further reduce the manufacturing cost of the semiconductor, it is preferable that the dry gas is air. More preferably, the Dry gas is Clean Dry Air (CDA).

Preferably, the air amplifier 11 includes:

the drainage cavity 17 and the amplification cavity 12 are connected with the drainage cavity 17, the drainage cavity 17 is provided with a second air inlet 14 communicated with outside air, and the amplification cavity 12 is provided with an air outlet 15;

a first gas inlet 13 in communication with the conduit 10 for delivering the compressed dry gas to the amplification chamber 12 for establishing a low pressure to cause the drainage chamber 17 to introduce the ambient gas into the amplification chamber 12 through the second gas inlet 14;

the gas outlet 15 is connected to the heater 16, and is configured to deliver the amplified drying gas to the heater 16.

Preferably, the second air inlet 14 and the air outlet 15 are distributed on two opposite sides of the drainage chamber 17 and the amplification chamber 12 in the axial direction along the drainage chamber 17 and the amplification chamber 12; the first inlet 13 is located in the radial direction of the amplification chamber 12.

Specifically, the radial direction of the amplification chamber 12 is a direction parallel to the Y-axis direction in fig. 1. The axis of the drainage lumen 17 (passing through the center of the drainage lumen 17 and extending in the X direction) coincides with the axis of the amplification lumen 12 (passing through the center of the amplification lumen 12 and extending in the X direction) so as to introduce ambient gas uniformly into the amplification lumen 12. The heater 16 is disposed opposite the gas outlet 15 in the axial direction of the amplification chamber 12 (i.e., the X-axis direction in fig. 1), i.e., the axis of the heater 16 coincides with the axis of the amplification chamber 12, to ensure uniform heat removal from the surface of the amplifier 16.

Preferably, the air amplifier 11 further includes an annular airflow chamber located at the periphery of the amplification chamber 12, and the dry gas input from the pipe 10 through the first gas inlet 13 passes through the annular airflow chamber and enters the amplification chamber 12.

Specifically, the compressed dry gas enters the first gas inlet 13 through the pipe 10, and is injected into the amplification chamber 12 through an annular gas flow chamber communicating with the first gas inlet 13. After the compressed dry gas is ejected from the annular airflow chamber, a low-pressure environment is established in the drainage chamber 17 by utilizing the coanda effect, so that a large amount of outside air enters the amplification chamber 12 from the second air inlet 14 through the drainage chamber 17. Finally, the gas entering the amplification chamber 12 from the first gas inlet 13 and from the second gas inlet 14 is transmitted to the surface of the heater 16 through the gas outlet 15, so that the heat on the surface of the heater 16 is rapidly taken away, and the excessive temperature inside the semiconductor device is avoided while the heating of the object to be heated is realized. The direction of the arrows in fig. 1 indicate the direction of flow of the compressed dry gas after it enters the amplification chamber 12 from the annular gas flow chamber.

In order to ensure the temperature of the drying gas inside the air amplifier 11, and thus further improve the heat exchange efficiency between the drying gas and the heater 16, it is preferable that the heating structure further includes a heat shield covering the outer surface of the air amplifier to avoid the influence of the external environment on the temperature of the drying gas inside the amplification chamber 12 and the drainage chamber 17. The specific material and shape of the heat shield are not limited in this embodiment, as long as the heat insulating effect is achieved.

Fig. 2A is a schematic diagram of a delivery path for compressed dry gas from a gas source to a pipeline in accordance with an embodiment of the present invention. Preferably, as shown in fig. 2A, the heating structure further includes:

a first three-way valve 20, an input end 201 of the first three-way valve 20 is communicated with a gas source, a first output end 202 of the first three-way valve 20 is connected with a pressure switch 21, a second output end 203 of the first three-way valve is communicated with an input end of the pipeline 10, the gas source is used for storing the compressed dry gas, and the pressure switch 21 is used for detecting the pressure of the compressed dry gas entering the pipeline 10.

In the present embodiment, by providing the pressure switch 21, the pressure of the compressed dry gas transmitted to the air amplifier 11 can be detected in real time, thereby avoiding the occurrence of pressure abnormality and ensuring safety and heating efficiency in the process of transmitting the dry gas and heating the object to be heated.

Fig. 2B is a schematic view of another delivery path for compressed dry gas from a gas source to a pipeline in accordance with an embodiment of the present invention. In order to further improve the flexibility and safety of heating the heating structure, it is preferable that, as shown in fig. 2B, the heating structure further includes:

and a regulating valve 22 installed between the second output terminal 203 of the first three-way valve 20 and the pipeline 10 for regulating a flow rate of the compressed dry gas entering the pipeline 10.

Preferably, the heating structure further comprises:

a sensor connected to the regulating valve 22 for detecting the temperature of the object to be heated and transmitting to the regulating valve 22;

the regulating valve 22 adjusts the flow rate of the compressed dry gas entering the duct 10 according to the temperature of the object to be heated.

Specifically, the dry gas is taken as air as an example. When the temperature of the object to be heated is lower than a first preset temperature, the regulating valve 22 may increase the flow rate of the compressed air entering the duct 10, thereby increasing the flow rate of the air flowing out from the air outlet 15, accelerating the transfer of heat to the object to be heated, so that the rate of temperature rise of the object to be heated is increased. When the temperature of the object to be heated is higher than the second preset temperature, the regulating valve 22 may decrease the flow rate of air entering the duct 10, thereby decreasing the flow rate of air flowing out from the air outlet 15, slowing down the transfer of heat to the object to be heated, so that the rate of temperature rise of the object to be heated is decreased. The specific type of the regulating valve 22 can be selected by those skilled in the art according to actual needs, and the present embodiment is not limited thereto.

In this embodiment, the temperature of the object to be heated can be detected by providing a plurality of sensors, each of which is connected to the control valve 22, so as to prevent the object to be heated from having a local temperature that is too high or too low.

In the present embodiment, by providing the control valve 22, the temperature increase rate of the object to be heated can be adjusted in real time as needed, so that the flexibility of temperature control in the semiconductor processing apparatus is improved, and the smooth progress of the semiconductor processing process is ensured.

Preferably, the heating structure further comprises:

and a flow meter 23 connected to the regulating valve 22 for detecting a flow rate of the compressed dry gas flowing through the regulating valve 22.

Through setting up flowmeter 23 for the staff can be directly perceived, accurate know the current inflow the pipeline 10 compressed dry gas's velocity of flow, the staff of being convenient for adjusts the velocity of flow according to actual need.

In order to further improve the heating efficiency and the heating uniformity of the object to be heated, it is preferable that the number of the duct 10 and the air method seven 11 is two, respectively, as shown in fig. 2B; the heating structure further includes:

a second three-way valve 24, the input 241 of which is connected to the second output 203 of the first three-way valve 20, the first output 242 of which 24 and the second output 243 of which 24 are in communication with two respective lines 10, each of which is connected to an air amplifier 11.

Specifically, the first three-way valve 20, the regulator valve 22, and the second three-way valve 24 are fixed to the same bracket. For example, the first three-way valve 20, the regulating valve 22, and the second three-way valve 24 are fixed to one end of the support, and the other end of the support is used for connection with other structural components inside the semiconductor processing apparatus, by screws. In the present embodiment, the shape of the bracket is not limited, and may be, but not limited to, L-shaped or U-shaped.

Fig. 3 is a schematic structural view of a heating structure heating and shielding a window according to an embodiment of the present invention. For example, as shown in fig. 2B and 3, the etching apparatus includes a reaction chamber 31 for accommodating a wafer 33, a shielding window 32 is disposed at a top of the reaction chamber 31, and the shielding window 32 is used for sealing the reaction chamber 31 and conducting heat to the reaction chamber 31. The two heating structures are symmetrically distributed on two opposite sides of the shielding window 32, and are used for heating the shielding window 32. Two output ends of the second three-way valve 24 are respectively communicated with two pipelines 10, and each pipeline 10 is communicated with one air amplifier 11. So that the dry gas from the gas source is delivered to both of the heating structures simultaneously after passing through the second three-way valve 24, thereby achieving simultaneous heating of the opposite sides of the shadow window 32. One skilled in the art can also arrange three or more heating structures on the periphery of the shielding window 32 according to actual needs. The material of the shadow window 32 may be, but is not limited to, ceramic.

Furthermore, the present embodiment provides a semiconductor processing apparatus, and a schematic diagram of a heating structure in the present embodiment can be seen in fig. 1 and 2. The semiconductor processing apparatus described in this embodiment may be, but is not limited to, a semiconductor etching machine. The semiconductor processing apparatus includes:

a heating structure as claimed in any one of the preceding claims.

Furthermore, the present embodiment also provides a heating method based on the heating structure described in any one of the above. Fig. 4 is a flow chart of a heating method according to an embodiment of the present invention. As shown in fig. 4, the heating method based on the heating structure according to any one of the above embodiments includes the following steps:

step S41, transmitting the compressed dry gas to the air amplifier 11 through the duct 10;

step S42, amplifying the compressed dry gas by the air amplifier 11;

step S43, delivering the amplified dry gas to the heater 16 for heating;

in step S44, the heated dry gas is delivered to the surface of the object to be heated by the heater 16.

Preferably, the specific step of delivering the compressed dry gas to the air amplifier 11 through the conduit 10 comprises:

detecting the pressure of the compressed dry gas through a pressure switch 21;

when said pressure is greater than a first preset threshold, the regulating valve 22 is opened;

when said pressure is greater than a second preset threshold value, the regulating valve 22 is closed.

Wherein the second preset threshold is greater than the first preset threshold. Adjusting the state of the regulating valve 22 according to the pressure of the drying gas avoids that the pressure of the drying gas delivered to the air amplifier 11 is too high or too low, for example: when the pressure is less than the first preset threshold, the regulating valve 22 is closed, and the dry gas cannot be transmitted to the air amplifier 11, so that the pressure of the dry gas transmitted to the air amplifier 11 is prevented from being too low; when the pressure is greater than the second preset threshold, the regulating valve is closed, and the dry gas cannot be transmitted to the air amplifier 11, so that the pressure of the dry gas transmitted to the air amplifier 11 is prevented from being too high, and the safety in the heating process is ensured.

Preferably, the specific steps of amplifying the compressed dry gas by the air amplifier 11 include:

the temperature of the object to be heated is detected and transmitted to the regulating valve 22;

the flow rate of the compressed dry gas entering the duct 10 is adjusted according to the temperature of the object to be heated by the regulating valve 22.

The state of the regulating valve 22 is regulated according to the temperature of the object to be heated, so that the heating rate of the object to be heated is regulated, the phenomenon that the temperature of the object to be heated is too high or too low is avoided, the object to be heated can be stabilized in a temperature range, and the continuous and stable implementation of the semiconductor process in the reaction chamber is ensured.

In the heating structure, the semiconductor processing device and the heating method according to the embodiment, the air amplifier and the pipeline communicated with the air amplifier are arranged, and the air amplifier is used for amplifying the dry gas and then transmitting the amplified dry gas to the heater, so that the heat can be quickly brought to the surface of the object to be heated, the object to be heated can be quickly heated, meanwhile, the damage to the internal structure of the semiconductor processing device is avoided, and the service life of the semiconductor processing device is prolonged while the smooth proceeding of the semiconductor manufacturing process is ensured.

The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, a plurality of improvements and decorations can be made without departing from the principle of the present invention, and these improvements and decorations should also be regarded as the protection scope of the present invention.

Claims

1. A heating structure, comprising:

a duct for conveying the compressed dry gas;

2. The heating structure of claim 1, wherein the dry gas is air.

3. The heating structure of claim 2, wherein the air amplifier comprises:

4. The heating structure of claim 3, wherein the second air inlet and the air outlet are distributed on opposite sides of the drainage chamber and the amplification chamber in an axial direction of the drainage chamber and the amplification chamber; the first gas inlet is located in a radial direction of the amplification chamber.

5. The heating structure according to claim 3, further comprising:

6. The heating structure according to claim 5, further comprising:

7. The heating structure according to claim 5, wherein the number of the duct and the air amplifier is two, respectively, further comprising:

8. The heating structure of claim 6, further comprising:

9. The heating structure of claim 6, further comprising:

10. The heating structure of claim 3, wherein the air amplifier further comprises an annular gas flow chamber located at the periphery of the amplification chamber, the dry gas input by the conduit through the first gas inlet passing through the annular gas flow chamber and entering the amplification chamber.

11. A semiconductor processing apparatus, comprising:

the heating structure of any one of claims 1-10.