CN210237839U - Ingot casting device for assisting crystal growth by using turbulent flow - Google Patents

Ingot casting device for assisting crystal growth by using turbulent flow Download PDF

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Publication number
CN210237839U
CN210237839U CN201921132429.0U CN201921132429U CN210237839U CN 210237839 U CN210237839 U CN 210237839U CN 201921132429 U CN201921132429 U CN 201921132429U CN 210237839 U CN210237839 U CN 210237839U
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guide rail
ingot casting
furnace
crystal growth
lead screw
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Changhao Yin
尹长浩
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Abstract

An ingot casting device for assisting crystal growth by using turbulence relates to the field of solar cell manufacturing equipment and comprises an ingot casting furnace with a built-in crucible, wherein a stirring shaft is arranged in the ingot casting furnace, the stirring shaft is connected with a matched driving device through a transmission mechanism, and a lifting mechanism for driving the driving device to lift is fixedly arranged on a furnace cover of the ingot casting furnace; a furnace cover of the ingot furnace is fixedly provided with a dynamic sealing mechanism matched with the stirring shaft, the lower part of the stirring shaft is fixedly provided with a graphite stirring blade for stirring melt in the crucible, and the graphite stirring blade is fixedly compounded with a ceramic coating or a ceramic shell layer. The utility model discloses a graphite stirring vane stirs fuse-element in the crucible from top to bottom, makes silicon, germanium fuse-element form abundant horizontal convection in the crucible, is favorable to reducing defects such as dislocation density in the crystal to improve the production quality of crystal.

Description

Ingot casting device for assisting crystal growth by using turbulent flow
Technical Field
The utility model relates to a solar cell manufacture equipment field, especially an ingot casting device that utilizes vortex to assist crystal growth.
Background
The growth process of high-purity crystals such as crystalline silicon, crystalline germanium and the like is an important link in the production process of solar cells such as crystalline silicon, crystalline germanium and the like. The quality of crystal growth fundamentally determines the performance of its solar cell. At present, silicon and germanium crystals corresponding to solar cells such as crystalline silicon, crystalline germanium and the like are mainly finished in corresponding ingot furnaces. The growth process of a polysilicon crystal is usually a directional solidification process in which impurity elements are segregated in the silicon melt due to segregation effects. The directional solidification can achieve a certain removal effect on impurities in the silicon crystal, but the removal effect is largely limited by the convection state of the silicon melt. At present, due to the structural limitation of a polycrystalline silicon ingot furnace, the convection of silicon melt is basically spontaneous convection (generated by density difference and argon interference), and the convection state is constantly changed along with crystal growth time and is difficult to control. Chinese patent publication No. CN201610581744 in the prior art discloses a method and apparatus for growing crystalline silicon by forced convection, in which a silicon nitride impeller is used to stir a silicon solution, the distance between the silicon nitride impeller and the upper part of the silicon crystal is controlled to be 3-8cm, and the rotation speed of the silicon nitride impeller is below 26 rpm in the whole crystal growing process. Due to the problems of impeller material (silicon nitride impeller is high in cost and purity is not easy to control) and impeller rotating speed (rotating speed is low), the technology and the device can not provide effective and controllable solution convection in the crystalline silicon growth process. Therefore, it is necessary to develop a production apparatus capable of forming a sufficient and controllable convection of the silicon melt during the growth of the crystalline silicon and germanium crystal.
Disclosure of Invention
The utility model aims to solve the technical problem that to the not enough of prior art, provide a simple structure is reliable, convenient to use and can produce the ingot casting device of supplementary crystal growth of utilization vortex of abundant horizontal convection current in silicon melt.
The technical problem to be solved by the utility model is realized through the following technical scheme. The utility model relates to an utilize ingot casting device of vortex auxiliary crystal growth, its characteristics are: the stirring shaft is connected with a matched driving device through a transmission mechanism, and a lifting mechanism for driving the driving device to lift is fixedly arranged on a furnace cover of the ingot furnace; a furnace cover of the ingot furnace is fixedly provided with a dynamic sealing mechanism matched with the stirring shaft, the lower part of the stirring shaft is fixedly provided with a graphite stirring blade for stirring melt in the crucible, and the graphite stirring blade is fixedly compounded with a ceramic coating or a ceramic shell layer.
Above the utility model relates to an utilize ingot casting device of vortex auxiliary crystal growth, its further preferred technical scheme or technical characterstic are: the lifting mechanism comprises a vertically arranged lead screw guide rail, the lead screw guide rail is fixedly installed on the furnace cover of the ingot furnace through a support, a lead screw sliding block is installed on the lead screw guide rail, a matched lead screw motor is fixedly installed on the support at the top of the lead screw guide rail and used for driving the lead screw sliding block to lift, and the driving device is fixedly connected onto the lead screw sliding block through the support.
Above the utility model relates to an utilize ingot casting device of vortex auxiliary crystal growth, its further preferred technical scheme or technical characterstic are: the lifting mechanism comprises a vertical linear guide rail, the linear guide rail is fixedly installed on a furnace cover of the ingot furnace through a support, a guide rail slide block is installed on the linear guide rail in a sliding mode, a telescopic cylinder is fixedly installed on the support at the top of the linear guide rail, a piston rod of the telescopic cylinder is fixedly connected with the guide rail slide block, and the driving device is fixedly connected onto the guide rail slide block through the support.
Above the utility model relates to an utilize ingot casting device of vortex auxiliary crystal growth, its further preferred technical scheme or technical characterstic are: the dynamic sealing mechanism is one or a combination of magnetic fluid seal, mechanical seal, positive pressure gas protection seal and negative pressure seal.
Above the utility model relates to an utilize ingot casting device of vortex auxiliary crystal growth, its further preferred technical scheme or technical characterstic are: the driving device is a driving motor. The driving motor is a servo motor, and the servo motor is controlled by a matched servo controller.
Above the utility model relates to an utilize ingot casting device of vortex auxiliary crystal growth, its further preferred technical scheme or technical characterstic are: the vertical projection of the stirring shaft is positioned at the center of the crucible.
Compared with the prior art, the utility model discloses following beneficial effect has:
the utility model discloses a graphite stirring vane who sets up in the ingot furnace stirs silicon, germanium fuse-element in the crucible, makes silicon, germanium fuse-element form abundant horizontal convection current in the crucible, and this is favorable to reducing silicon, the horizontal temperature gradient of germanium fuse-element, is favorable to improving the roughness at crystal growth interface to reduce the thermal stress in the crystal, and then reduce defects such as dislocation density in the crystal, thereby improve the quality of crystal.
The graphite stirring blades can be driven to lift up and down in the crucible through the lifting mechanism, so that each layer of the silicon and germanium melt can be more sufficient and uniform in a convection manner, and the crystal growth effect is better; and the sufficient convection in the silicon and germanium melts can also improve the removal effect of impurities in the polycrystalline silicon crystal.
The graphite stirring blade compounded with the ceramic coating or the ceramic shell layer has low metal content, and can improve the crystal growth quality (the metal content is important to the crystal growth, and the metal pollution can cause the power generation efficiency of the battery piece of the germanium and silicon terminal product to be greatly reduced).
Drawings
FIG. 1 is a schematic structural view of example 2;
FIG. 2 is a schematic structural view of embodiment 3;
FIG. 3 is an enlarged view of a portion A in example 3;
in the figure, 1 is an ingot furnace, 2 is a crucible, 3 is a stirring shaft, 4 is a driving device, 5 is a dynamic sealing mechanism, 6 is a graphite stirring blade, 7 is a lead screw guide rail, 8 is a lead screw slider, 9 is a lead screw motor, 10 is a linear guide rail, 11 is a guide rail slider, and 12 is a telescopic cylinder.
Detailed Description
The following further describes embodiments of the present invention in order to facilitate further understanding of the present invention by those skilled in the art, and does not constitute a limitation to the right thereof.
Embodiment 1, an ingot casting device using turbulence to assist crystal growth, comprising an ingot casting furnace 1 with a built-in crucible 2, wherein a stirring shaft 3 is arranged in the ingot casting furnace 1, the stirring shaft 3 is connected with a matched driving device 4 through a transmission mechanism, and a lifting mechanism for driving the driving device 4 to lift is fixedly arranged on a furnace cover of the ingot casting furnace 1; a dynamic sealing mechanism 5 matched with the stirring shaft 3 is fixedly arranged on a furnace cover of the ingot furnace 1, a graphite stirring blade 6 for stirring the melt in the crucible 2 is fixedly arranged at the lower part of the stirring shaft 3, and a ceramic coating is fixedly compounded on the graphite stirring blade 6. The dynamic sealing mechanism 5 is sealed by magnetic fluid.
The ingot casting device for assisting crystal growth by utilizing turbulent flow is characterized by comprising the following steps of: referring to fig. 1, a ceramic shell is fixed and compounded to the graphite stirring blade 6. The dynamic sealing mechanism 5 adopts mechanical seal. The lifting mechanism comprises a vertically arranged lead screw guide rail 7, the lead screw guide rail 7 is fixedly installed on a furnace cover of the ingot furnace 1 through a support, a lead screw sliding block 8 is installed on the lead screw guide rail 7, a matched lead screw motor 9 is fixedly installed on the support at the top of the lead screw guide rail 7 and used for driving the lead screw sliding block to lift, and the driving device 4 is fixedly connected onto the lead screw sliding block 8 through the support. The screw motor 8 is a servo motor, and the servo motor is controlled by a matched servo controller.
An ingot casting apparatus using vortex-assisted crystal growth as described in example 3, example 1 or 2: referring to fig. 2 and 3, the dynamic sealing mechanism 5 is sealed by protecting with positive pressure gas. The lifting mechanism comprises a vertical linear guide rail 10, the linear guide rail 10 is fixedly installed on a furnace cover of the ingot furnace 1 through a support, a guide rail slide block 11 is installed on the linear guide rail 10 in a sliding mode, a telescopic cylinder 12 is fixedly installed on the support at the top of the linear guide rail 10, a piston rod of the telescopic cylinder 12 is fixedly connected with the guide rail slide block 11, and the driving device 4 is fixedly connected onto the guide rail slide block 11 through the support. The telescopic cylinder 12 is controlled by a matched pneumatic control device.
An ingot casting apparatus using vortex-assisted crystal growth as described in example 4, example 1 or 2 or 3: the dynamic sealing mechanism 5 adopts negative pressure sealing.
Example 5, the ingot casting apparatus for assisting crystal growth by using turbulent flow according to any one of examples 1 to 4: the driving device 4 is a driving motor. The driving motor is a servo motor, and the servo motor is controlled by a matched servo controller.
Example 6, the ingot casting apparatus using vortex-assisted crystal growth according to any of examples 1 to 5: the vertical projection of the stirring shaft 3 is positioned at the center of the crucible 2.
When the utility model is used, the driving device 4 on the sliding block is opened to drive the stirring shaft 3 to rotate at a speed of more than 30 revolutions per minute, and the melt in the crucible 2 is stirred by the graphite stirring blade 6 on the stirring shaft 3, so that the melt in the crucible 2 generates convection; and the slide block on the lifting mechanism drives the driving device 4 to move up and down, so that the graphite stirring blade 6 stirs the melt in the crucible 2 up and down, each layer of the melt generates sufficient convection, and the quality of the silicon ingot produced by the ingot furnace 1 is better.

Claims (6)

1. The utility model provides an ingot casting device that utilizes vortex to assist crystal growth which characterized in that: the stirring shaft is connected with a matched driving device through a transmission mechanism, and a lifting mechanism for driving the driving device to lift is fixedly arranged on a furnace cover of the ingot furnace; a furnace cover of the ingot furnace is fixedly provided with a dynamic sealing mechanism matched with the stirring shaft, the lower part of the stirring shaft is fixedly provided with a graphite stirring blade for stirring melt in the crucible, and the graphite stirring blade is fixedly compounded with a ceramic coating or a ceramic shell layer.
2. The ingot casting device for assisting crystal growth by using turbulent flow as claimed in claim 1, wherein: the lifting mechanism comprises a vertically arranged lead screw guide rail, the lead screw guide rail is fixedly installed on the furnace cover of the ingot furnace through a support, a lead screw sliding block is installed on the lead screw guide rail, a matched lead screw motor is fixedly installed on the support at the top of the lead screw guide rail and used for driving the lead screw sliding block to lift, and the driving device is fixedly connected onto the lead screw sliding block through the support.
3. The ingot casting device for assisting crystal growth by using turbulent flow as claimed in claim 1, wherein: the lifting mechanism comprises a vertical linear guide rail, the linear guide rail is fixedly installed on a furnace cover of the ingot furnace through a support, a guide rail slide block is installed on the linear guide rail in a sliding mode, a telescopic cylinder is fixedly installed on the support at the top of the linear guide rail, a piston rod of the telescopic cylinder is fixedly connected with the guide rail slide block, and the driving device is fixedly connected onto the guide rail slide block through the support.
4. The ingot casting device for assisting crystal growth by using turbulent flow as claimed in claim 1, wherein: the dynamic sealing mechanism is one or a combination of magnetic fluid seal, mechanical seal, positive pressure gas protection seal and negative pressure seal.
5. The ingot casting device for assisting crystal growth by using turbulent flow as claimed in claim 1, wherein: the driving device is a driving motor.
6. The ingot casting device for assisting crystal growth by using turbulent flow as claimed in claim 1, wherein: the vertical projection of the stirring shaft is positioned at the center of the crucible.
CN201921132429.0U 2019-07-18 2019-07-18 Ingot casting device for assisting crystal growth by using turbulent flow Active CN210237839U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201921132429.0U CN210237839U (en) 2019-07-18 2019-07-18 Ingot casting device for assisting crystal growth by using turbulent flow

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201921132429.0U CN210237839U (en) 2019-07-18 2019-07-18 Ingot casting device for assisting crystal growth by using turbulent flow

Publications (1)

Publication Number Publication Date
CN210237839U true CN210237839U (en) 2020-04-03

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CN (1) CN210237839U (en)

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