CN210201849U - Chaotic circuit formed by memristor based on fractional order inductance - Google Patents

Chaotic circuit formed by memristor based on fractional order inductance Download PDF

Info

Publication number
CN210201849U
CN210201849U CN201920693253.XU CN201920693253U CN210201849U CN 210201849 U CN210201849 U CN 210201849U CN 201920693253 U CN201920693253 U CN 201920693253U CN 210201849 U CN210201849 U CN 210201849U
Authority
CN
China
Prior art keywords
fractional order
diode
memristor
circuit
inductor
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Expired - Fee Related
Application number
CN201920693253.XU
Other languages
Chinese (zh)
Inventor
Chaojun Wu
吴朝俊
Zhang Liu
刘璋
Kai Yan
闫开
Ningning Yang
杨宁宁
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
Xian Polytechnic University
Original Assignee
Xian Polytechnic University
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Xian Polytechnic University filed Critical Xian Polytechnic University
Priority to CN201920693253.XU priority Critical patent/CN210201849U/en
Application granted granted Critical
Publication of CN210201849U publication Critical patent/CN210201849U/en
Expired - Fee Related legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Images

Landscapes

  • Semiconductor Integrated Circuits (AREA)

Abstract

The utility model discloses a recall chaotic circuit that hinders ware and constitute based on fractional order inductance, include the fractional order electric capacity C that connects gradually and form closed circuitqFractional order inductor LqA negative resistance G, a fractional order capacitor CqBoth ends of the resistor M are connected in parallel with a fractional order memristor MqThe fractional order memristor MqAnd one end of the inductor is connected with the fractional order inductor LqConnection of the fractional order memristor MqThe other end is also connected with the negative resistor G; the system has an unstable saddle point and a pair of unstable saddle foci, which indicates that the system is a double-vortex chaotic system with fixed parameters. And the circuit is divided into analysis parts compared with other fractional order circuitsThe order chaotic system has simple topological structure and rich dynamic behaviors, and is greatly promoted to develop.

Description

Chaotic circuit formed by memristor based on fractional order inductance
Technical Field
The utility model belongs to the technical field of chaotic system signal generator design, concretely relates to recall chaotic circuit that hinders ware and constitute based on fractional order inductance.
Background
Memristors are considered the fourth basic circuit element, first proposed by professor zeiss in 1971. Since the development of practical memristors in HP laboratories in 2008, the practical application of memristors has received extensive attention. At present, the research on the memristor mainly focuses on the physical implementation of the memristor, such as a memristor equivalent circuit, a chaotic circuit dynamic behavior based on the memristor, and a memristor neural network. The memristor is used as a basic circuit element, and is mostly applied to various fields in a circuit form at present, so that the application circuit of the memristor is rich and diverse. Because the memristor has natural nonlinearity and plasticity, the memristor can be easily organically combined with other circuit elements to construct a chaotic oscillating circuit based on the memristor.
Fractional calculus is an extension of the mathematical domain that can be used to describe memristive properties. Fractional calculus plays an important role in signal and image processing, control theory, and nonlinear dynamical systems. A large number of researches show that the degree of freedom of the model can be improved by introducing the fractional order parameters into the fractional order model as adjustable parameters, and the actual characteristics of the system can be described more accurately. Since the magnetic flux or charge is mathematically a time integral of voltage or current, it can exhibit its own memory characteristics. Fractional calculus is particularly well suited to describe the memory and genetic properties of the system. It has essentially the same mathematical principles as the memory characteristics of the memory circuit elements. Therefore, the actual memory circuit elements should also be fractional order, either from a mathematical theory perspective or from a symmetry relationship between circuit variables. By popularizing the model to the fractional order, a new fractional order model can be obtained, and richer dynamic behaviors and chaotic behaviors are obtained.
SUMMERY OF THE UTILITY MODEL
The utility model aims at providing a recall chaotic circuit that hinders ware and constitute based on fractional order inductance provides a fractional order and recalls and hinder ware chaotic system circuit, and this circuit shows abundant dynamics action along with the change of order and parameter under different initial conditions.
The true bookThe technical scheme adopted by the novel memristor-based chaotic circuit comprises a fractional order capacitor C which is sequentially connected and forms a closed loopqFractional order inductor LqNegative resistance G, fractional order capacitance CqBoth ends of the resistor M are connected in parallel with a fractional order memristor MqFractional order memristor MqAnd one end of the inductor is connected with the fractional order inductor LqConnected, fractional order memristor MqThe other end is also connected with a negative resistance G and a fractional order memristor MqComprises a diode bridge circuit, wherein fractional order inductors are connected in parallel at two ends of the diode bridge circuit
Figure BDA0002060435160000021
Fractional order capacitor CqComprising a resistor RinAnd a resistance RinA plurality of RC equivalent circuits are connected in parallel, and each RC equivalent circuit comprises capacitors C connected in parallelnAnd a resistance RnFractional order inductance LqAnd fractional order inductance
Figure BDA0002060435160000022
Respectively comprises a resistor RinAnd a resistance RinThe two ends of the resistor are also connected with a plurality of RL equivalent circuits in parallel, and each RL equivalent circuit comprises resistors R connected together in seriesnAnd an inductance Ln
The utility model discloses a characteristics still lie in:
the diode bridge circuit comprises a diode VD with positive and negative ends connected in series1Diode VD4And a diode VD connected in series with the positive and negative terminals3Diode VD2Diode VD1Negative terminal of and diode VD3Is connected with the negative terminal of a diode VD2And the positive terminal of the diode VD4Is connected with the positive terminal of the inductor and has fractional order
Figure BDA0002060435160000023
And diode VD3Negative terminal of and diode VD2The positive terminals of the two are connected in parallel.
The utility model has the advantages that:
the utility model relates to a recall chaotic circuit that hinders ware and constitute based on fractional order inductance, this system have an unstable saddle point and a pair of unstable saddle burnt, show that this system is a two whirlpool book chaotic system that has fixed parameter. Compared with other fractional order circuits, the circuit has simple topological structure and rich dynamic behaviors for analyzing the fractional order chaotic system, and has great promotion effect on the development of the chaotic system.
Drawings
FIG. 1 is a chaotic circuit formed by memristors based on fractional order inductance;
FIG. 2 is a single cascaded inductor for a diode bridge circuit
Figure BDA0002060435160000024
A generalized memristor circuit is formed;
FIG. 3 is a fractional order inductor equivalent circuit;
FIG. 4 is a fractional order capacitor equivalent circuit;
FIG. 5(a) shows v when the fractional order is 0.991-i1A phase diagram;
FIG. 5(b) is a graph showing the v at a fractional order of 0.991-i1A phase diagram;
FIG. 5(c) shows i when the fractional order is 0.991-imA phase diagram;
FIG. 5(d) is a graph showing the v at a fractional order of 0.991-i1-imA phase diagram;
FIG. 6 is a current-voltage characteristic of a fractional order memristor;
FIG. 7 shows the fractional order in the region [0.8,1 ]]In time of change, variable v1A local maximum value bifurcation map of;
FIG. 8(a) is a phase trace plot of a system with a fractional order of 0.85;
FIG. 8(b) is a phase trace plot of the system with a fractional order of 0.9;
FIG. 8(c) is a phase trace plot of the system with a fractional order of 0.93;
FIG. 8(d) is a phase trace plot of the system with a fractional order of 0.942;
FIG. 8(e) is a phase trace of the system with a fractional order of 0.955;
FIG. 8(f) is a phase trace diagram of the system at a fractional order of 0.962;
fig. 9 is a circuit diagram of a chaotic circuit implemented by the memristor based on fractional order inductance of the present invention;
FIG. 10(a) shows v when the fractional order is 0.99C-iLPhase PSpice circuit simulation diagram;
FIG. 10(b) is a graph showing a case where the fractional order is 0.99 order
Figure BDA0002060435160000031
Phase PSpice circuit simulation diagram;
FIG. 10(c) is a graph showing a case where the fractional order is 0.99
Figure BDA0002060435160000032
Phase PSpice circuit simulation diagram;
FIG. 10(d) is a graph showing a case where the fractional order is 0.99
Figure BDA0002060435160000033
Phase PSpice circuit simulation diagram;
FIG. 11(a) shows v when the fractional order is 0.88 orderC-iLPhase PSpice circuit simulation diagram;
FIG. 11(b) is a graph of the fractional order of 0.88
Figure BDA0002060435160000034
And (3) phase PSpice circuit simulation diagrams.
Detailed Description
The present invention will be described in detail with reference to the accompanying drawings and specific embodiments.
The utility model relates to a recall chaotic circuit that hinders ware and constitute based on fractional order inductance, as shown in fig. 1, including connecting gradually and forming the fractional order electric capacity C of closed circuitqFractional order inductor LqA negative resistance G, a fractional order capacitor CqBoth ends of the resistor M are connected in parallel with a fractional order memristor MqThe fractional order memristor MqAnd one end of the first and second electrodes is connected with the fractional orderFeeling LqConnection of the fractional order memristor MqThe other end is also connected with the negative resistor G.
As shown in FIG. 2, the fractional order memristor MqComprises a diode bridge circuit, wherein fractional order inductors are connected in parallel at two ends of the diode bridge circuit
Figure BDA0002060435160000041
The diode bridge circuit comprises a diode VD with positive and negative ends connected in series1Diode VD4And a diode VD connected in series with the positive and negative terminals3Diode VD2Said diode VD1And the negative terminal of the diode VD3Is connected to the negative terminal of the diode VD2And the positive terminal of the diode VD4Is connected with the positive terminal of the inductor and has fractional order
Figure BDA0002060435160000042
And diode VD3Negative terminal of and diode VD2The positive terminals of the two are connected in parallel.
As shown in fig. 3, the fractional order inductance LqAnd the fractional order inductor
Figure BDA0002060435160000043
Respectively comprises a resistor RinAnd the resistance RinThe two ends of the resistor are also connected with a plurality of RL equivalent circuits in parallel, and each RL equivalent circuit comprises resistors R connected together in seriesnAnd an inductance Ln
As shown in fig. 4, a fractional order capacitor CqComprising a resistor RinAnd the resistance RinA plurality of RC equivalent circuits are connected in parallel, and each RC equivalent circuit comprises capacitors C connected in parallelnAnd a resistance Rn
The utility model relates to a recall mathematical model of chaos circuit that hinders ware and constitute based on fractional order inductance has 3 state variables, is fractional order electric capacity C respectivelyqVoltage v acrossCThrough a fractional order inductor LqCurrent i ofLAnd reflects fractional order memristor MqFlow-through fractional order inductance of internal state variables
Figure BDA0002060435160000045
Current of
Figure BDA0002060435160000046
FIG. 2 shows a fractional order memristor MqCan be represented by the following equation:
Figure BDA0002060435160000044
isis the reverse saturation current of the diode, rho is 1/(2 nV)T) N is an emission coefficient, VTIs a thermal voltage. i.e. i0Is the current through a fractional order inductor, vgRepresenting the input voltage, igRepresenting the input current, L is set to 10 mH. Memory is
Figure BDA0002060435160000057
The fractional order inductance is implemented as an equivalent circuit as shown in fig. 3. The equivalent circuit expression of the fractional order inductor is as follows:
Figure BDA0002060435160000051
the serial number of the parallel resistor and the inductor is N-2N +1, and N is the order of the filter.
The fractional order capacitor is realized by an equivalent circuit shown in fig. 4, and the equivalent circuit expression of the fractional order capacitor is as follows:
Figure BDA0002060435160000052
a mathematical model of the chaos circuit that memristor constitutes based on fractional order inductance can be represented by 3 state variables, respectively fractional order electric capacity CqVoltage v acrossCThrough a fractional order inductor LqCurrent i ofLAnd reaction fractional order memristor MqInternal state variablesFlowing through fractional order inductor
Figure BDA0002060435160000053
Current of
Figure BDA0002060435160000054
By using kirchhoff's voltage law and kirchhoff's current law for the circuit shown in fig. 1, a mathematical model of this chaotic circuit can be obtained as represented by the following equation:
Figure BDA0002060435160000055
the following variables and circuit parameters were normalized:
Figure BDA0002060435160000056
the normalized fractional order mathematical model of the chaotic circuit is obtained as follows:
Figure BDA0002060435160000061
respectively setting fractional order capacitance, inductance and resistor as Cq=5nF、Lq=25mH、G=0.65mS、
Figure BDA0002060435160000062
Then, the values of the three parameters are:
α=1.1834,β=0.4734,γ=1.8525×10-4(6)
numerical simulation:
in order to verify the chaotic circuit formed by the memristor based on the fractional order inductance, MATLAB software is used for carrying out numerical simulation, and a mathematical model is given by an equation (5). The corresponding parameters are as described above, and v at the fractional order of 0.99 can be obtained1-i1As shown in fig. 5(a) and 5(b), the chaotic attractor is a double-vortex attractor. FIGS. 5(c) and 5(d) are each i at a fractional order of 0.991-imAnd v1-i1-imPhase diagram of (a). At the same time, generalized fractionThe current-voltage characteristic curve of the order memristor is shown in fig. 6, and the effectiveness of the fractional order memristor is verified through a hysteresis loop.
When the order q varies between regions [0.8,1 ]]Time, variable v1The bifurcation diagram of the local maxima of (2) is shown in fig. 7. As shown in FIGS. 8(a), 8(b), 8(c), 8(d), 8(e) and 8(f), when q is located in the region [0.805,0.816 ]]The system is in a periodic transition state. In the [0.891,0.895 ]]Within the narrow range of (2), the system has short upper and lower single-period coexistence time. When q reaches 0.895, the system enters an upper and a lower double-period limit loop which coexist, then enters a short-term four-period limit loop when q reaches 0.973, and enters a single-vortex chaotic attractor by period doubling bifurcation. And when q is 0.947, combining the discontinuous spiral chaotic attractors to generate a double-vortex chaotic attractor, and eliminating the coexistence period limit loop and the spiral chaotic attractor. The unstable tracks of the upper and lower spiral chaotic attractors which coexist collide with each other to cause complete chaos. The chaotic behavior suddenly stops at q 0.962.
The coexistence of the periodic limit cycle and the spiral chaotic attractor under different initial conditions of the order q between 0.895 and 0.947 is a phenomenon worthy of further research. For a single initial condition, up and down jumps in the variables can lead to discontinuities in the dynamic behavior. This discontinuous behavior constitutes exactly one co-existence phenomenon for both initial conditions. After entering double-vortex chaos, the two tracks enter an agreeable closed area.
Circuit simulation:
in order to further verify the feasibility of the chaos circuit that the memristor constituted based on fractional order inductance that proposes, the utility model discloses utilize PSpice software to carry out the circuit emulation, the utility model discloses a chaos circuit realization circuit diagram that memristor constituted based on fractional order inductance is shown in FIG. 9. The equivalent circuit of the fractional order inductance is shown in fig. 3. The equivalent circuit of the fractional order capacitor is shown in fig. 4. The circuit parameters are shown in the following table.
TABLE 1 fractional order LC equivalent link resistance
Figure BDA0002060435160000071
TABLE 2 fractional order LC equivalent link parameters
Figure BDA0002060435160000072
Figure BDA0002060435160000081
The chaotic circuit based on the fractional order memristor with the order of 0.99 is designed by using the parameters in the table above, and circuit simulation is performed, and experimental results are shown in fig. 10(a), 10(b), 10(c) and 10 (d). Therefore, when the order is 0.99 order, the system is in a chaotic state, the result is completely consistent with the result of numerical simulation, and the correctness of theoretical analysis is verified.
The chaotic circuit formed by memristors based on fractional order inductance when the order is 0.95 is designed by using the parameters in the table above, and circuit simulation is performed, and the experimental results are shown in fig. 11(a) and 11 (b). It can be seen that when the order is 0.95, the system is in a chaotic state.

Claims (1)

1. A chaotic circuit formed by memristors based on fractional order inductance is characterized by comprising fractional order capacitors C which are sequentially connected and form a closed loopqFractional order inductor LqA negative resistance G, a fractional order capacitor CqBoth ends of the resistor M are connected in parallel with a fractional order memristor MqThe fractional order memristor MqAnd one end of the inductor is connected with the fractional order inductor LqConnection of the fractional order memristor MqThe other end is also connected with the negative resistance G, and the fractional order memristor MqComprises a diode bridge circuit, wherein fractional order inductors are connected in parallel at two ends of the diode bridge circuit
Figure DEST_PATH_FDA0002341535070000011
The fractional order capacitor CqComprising a resistor RinAnd the resistance RinA plurality of RC equivalent circuits are connected in parallel, and each RC equivalent circuit comprises electricity connected in parallelContainer CnAnd a resistance RnSaid fractional order inductance LqAnd the fractional order inductor
Figure DEST_PATH_FDA0002341535070000012
Respectively comprises a resistor RinAnd the resistance RinThe two ends of the resistor are also connected with a plurality of RL equivalent circuits in parallel, and each RL equivalent circuit comprises resistors R connected together in seriesnAnd an inductance Ln
The diode bridge circuit comprises a diode VD with positive and negative ends connected in series1Diode VD4And a diode VD connected in series with the positive and negative terminals3Diode VD2Said diode VD1And the negative terminal of the diode VD3Is connected to the negative terminal of the diode VD2And the positive terminal of the diode VD4Is connected with the positive terminal of the inductor, and the fractional order inductor
Figure DEST_PATH_FDA0002341535070000013
And diode VD3Negative terminal of and diode VD2The positive terminals of the two are connected in parallel.
CN201920693253.XU 2019-05-15 2019-05-15 Chaotic circuit formed by memristor based on fractional order inductance Expired - Fee Related CN210201849U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201920693253.XU CN210201849U (en) 2019-05-15 2019-05-15 Chaotic circuit formed by memristor based on fractional order inductance

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201920693253.XU CN210201849U (en) 2019-05-15 2019-05-15 Chaotic circuit formed by memristor based on fractional order inductance

Publications (1)

Publication Number Publication Date
CN210201849U true CN210201849U (en) 2020-03-27

Family

ID=69882956

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201920693253.XU Expired - Fee Related CN210201849U (en) 2019-05-15 2019-05-15 Chaotic circuit formed by memristor based on fractional order inductance

Country Status (1)

Country Link
CN (1) CN210201849U (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113112010A (en) * 2021-04-29 2021-07-13 齐鲁工业大学 Nerve fiber equivalent circuit supporting soliton wave conduction

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN113112010A (en) * 2021-04-29 2021-07-13 齐鲁工业大学 Nerve fiber equivalent circuit supporting soliton wave conduction

Similar Documents

Publication Publication Date Title
Bao et al. A simple third-order memristive band pass filter chaotic circuit
US8848337B2 (en) Signal processing devices having one or more memristors
CN107947914A (en) A kind of chaos circuit based on fractional order memristor
CN112884141B (en) Memristive coupling Hindmarsh-Rose neuron circuit
CN210201849U (en) Chaotic circuit formed by memristor based on fractional order inductance
CN207652452U (en) A kind of fractional-order chaos circuit based on fractional order memristor
Singh et al. Novel meminductor emulators using operational amplifiers and their applications in chaotic oscillators
Brandstetter et al. Second order low-pass and high-pass filter designs using method of synthetic immitance elements
CN104796248A (en) MCLC type memristive chaotic signal generation device
CN112329365B (en) Coupled dual-memristor high-dimensional hidden signal generation system
CN108833073B (en) Recall container and memory inductor-based equivalent circuit model of chaotic oscillator
CN109347616A (en) A kind of chaos circuit based on fractional order memristor
Bhattacharyya et al. Systematic generation of canonic sinusoidal RC-active oscillators
Yadav et al. New grounded and floating memristor-less meminductor emulators using VDTA and CDBA
CN107017979A (en) A kind of Generation of Chaotic Signals based on broad sense memristor simulator
CN108768611B (en) Fractional order memristor time-lag chaotic circuit
Hassanein et al. Incremental grounded voltage controlled memristor emulator
Singh et al. OTA and CDTA-based new memristor-less meminductor emulators and their applications
RU2540817C1 (en) Chaotic oscillation generator
CN109670221B (en) Cubic nonlinear magnetic control memristor circuit composed of fractional order capacitors
CN110110460B (en) Diode bridge generalized fractional order memristor based on fractional order inductance
Li et al. Research on low pass filter based on memristor and memcapacitor
CN111162769B (en) Hyperbolic tangent memristor Duffing chaotic model and circuit
CN106911463A (en) A kind of Cai Shi memristor chaos circuits based on active band-pass filter
CN209844977U (en) Fractional order memristor formed by fractional order inductor and diode bridge circuit

Legal Events

Date Code Title Description
GR01 Patent grant
GR01 Patent grant
CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20200327

Termination date: 20210515

CF01 Termination of patent right due to non-payment of annual fee