CN210183292U - Follower circuit structure with built-in negative feedback - Google Patents
Follower circuit structure with built-in negative feedback Download PDFInfo
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- CN210183292U CN210183292U CN201920956946.3U CN201920956946U CN210183292U CN 210183292 U CN210183292 U CN 210183292U CN 201920956946 U CN201920956946 U CN 201920956946U CN 210183292 U CN210183292 U CN 210183292U
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Abstract
The utility model discloses a follower circuit structure of built-in negative feedback in area, through increase the amplification unit on the basis at present follower circuit, the current load of control follower circuit is got rid of again to the output of amplification unit, constitutes built-in negative feedback loop, can adjust the conduction function of the output bandwidth of follower circuit, frequency domain, can adjust the output current of follower circuit simultaneously to improve the dynamic driving ability of follower circuit. And for current follower circuit, the utility model discloses on the basis that increases few devices, very big promotion the characteristic of the time domain and the frequency domain of follower circuit, the advantage is obvious.
Description
Technical Field
The utility model relates to the field of electrical technology, especially, relate to a follower circuit structure of built-in negative feedback.
Background
In a wide variety of electrical systems, the follower circuit is an indispensable module. The follower circuit structure has the characteristics of high input impedance and low output impedance, so that the follower circuit structure is applied to occasions such as potential adjustment, impedance isolation, driving of an output stage, a filter and the like.
Referring to fig. 1, a schematic diagram of a conventional follower circuit is shown. The conventional follower circuit, which is implemented by a CMOS process as an example, includes a current source It11, a first transistor M11, a second transistor M12, and a third transistor M13, wherein the first, second, and third transistors M11, M12, and M13 are all NMOS transistors.
Specifically, the first transistor M11 is used as an input transistor, the gate thereof is used as the input node vi of the follower circuit, the drain thereof receives a power supply voltage VCC, the source thereof is used as the output node vo of the follower circuit, and the source thereof is simultaneously electrically connected to the drain of the second transistor M12, so that the second transistor M2 is used as the current load of the source of the first transistor M1.
The second transistor M12 and the third transistor M13 form a current mirror in a cascode mode; the drain of the second transistor M12 is further used as the output end of the current mirror, and the source thereof is grounded; the drain of the third transistor M13 is shorted to its gate, and is electrically connected to the output terminal of the current source It11, which serves as the input terminal of the current mirror, and its source is also grounded; the input end of the current source It11 is electrically connected to the power supply voltage VCC.
The current load of the prior follower circuit is fixed, so the output current driving capability of the follower circuit is weak. Meanwhile, the output impedance and the output bandwidth of the conventional follower circuit are determined by only one parameter of the transconductance of the first transistor M11, so that the design flexibility is not high.
Therefore, how to adjust the driving capability of the follower output current by using a relatively simple circuit structure, and adjust the output impedance and the output bandwidth of the follower become a technical problem to be solved urgently in the technical development of the follower circuit structure.
SUMMERY OF THE UTILITY MODEL
An object of the utility model is to provide a follower circuit structure of in-band negative feedback to the technical problem who exists among the prior art, can adopt relatively simple circuit structure to adjust follower output current's driving force, adjustment follower output impedance and output bandwidth.
In order to achieve the above object, the utility model provides a follower circuit structure of built-in negative feedback in area, include: the circuit comprises an input unit, a first current load unit, a second current load unit and an amplifying unit, wherein the input unit, the first current load unit and the amplifying unit form a built-in negative feedback loop; the input end of the input unit is electrically connected to the input node of the follower circuit, the first end of the input unit is electrically connected to the input end of the amplifying unit, and the output end of the input unit is used as the output node of the follower circuit; a first end of the first current load unit is electrically connected to the output end of the input unit, a control end of the first current load unit is electrically connected to the output end of the amplifying unit, and the first current load unit is used as a current load of the input unit to control the output current of the follower circuit; the control end of the amplifying unit receives a bias voltage to work in an amplifying working area, the input end of the amplifying unit receives a negative feedback signal of the built-in negative feedback loop and performs amplification processing, and the output end of the amplifying unit outputs a control signal to dynamically adjust the load current of the first current load unit so as to adjust the output current of the follower circuit; the second current load unit is electrically connected to the input terminal of the amplifying unit, and is used as a current load of the amplifying unit.
The utility model has the advantages that: the utility model provides a follower circuit structure of in-band built-in negative feedback through increase the amplification unit on the basis at present follower circuit, the current load of control follower circuit is got rid of again to the output of amplification unit, constitutes built-in negative feedback loop, can the conduction function of the output bandwidth of dynamic adjustment follower circuit, frequency domain through the negative feedback loop, can the load current of dynamic adjustment follower circuit output simultaneously, makes the output current of follower circuit is adjustable to improve the dynamic driving force of follower circuit. And for current follower circuit, the utility model discloses on the basis that increases few devices, very big promotion the characteristic of the time domain and the frequency domain of follower circuit, the advantage is obvious.
Drawings
FIG. 1 is a schematic diagram of a prior art follower circuit;
FIG. 2 is a schematic diagram of a circuit structure of a follower with built-in negative feedback according to the present invention;
FIG. 3 is a schematic circuit diagram of a first embodiment of a follower circuit structure with built-in negative feedback according to the present invention;
FIG. 4 is a schematic circuit diagram of a second embodiment of the follower circuit structure with built-in negative feedback according to the present invention;
FIG. 5 is a schematic circuit diagram of a third embodiment of the follower circuit structure with built-in negative feedback according to the present invention;
FIG. 6 is a schematic circuit diagram of a fourth embodiment of the follower circuit structure with built-in negative feedback according to the present invention.
Detailed Description
Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the accompanying drawings are exemplary only for the purpose of explaining the present invention, and should not be construed as limiting the present invention. Furthermore, the present invention repeats reference numerals and/or reference letters in different examples, which are repeated for purposes of simplicity and clarity and do not, themselves, indicate a relationship between the various embodiments and/or arrangements discussed.
Referring to fig. 2, the present invention is a schematic diagram of a circuit structure of a follower with built-in negative feedback. The utility model discloses follower circuit structure includes: the circuit comprises an input unit 21, a first current load unit 22, an amplifying unit 23 and a second current load unit 24, wherein the input unit 21, the first current load unit 22 and the amplifying unit 23 form a built-in negative feedback loop.
An input terminal of the input unit 21 is electrically connected to an input node vi of the follower circuit, a first terminal thereof is electrically connected to an input terminal of the amplifying unit 23, and an output terminal thereof serves as an output node vo of the follower circuit. In a further embodiment, the input unit 21 comprises a first transistor for outputting an output signal in response to an input of the follower circuit. The transconductance of the first transistor may determine an output impedance and an output bandwidth of the follower circuit.
A first end of the first current load unit 22 is electrically connected to the output end of the input unit 21, and a control end thereof is electrically connected to the output end of the amplifying unit 23; the first current load unit 22 is used as a current load of the input unit 21 to control an output current of the follower circuit. In a further embodiment, the first current load unit 22 includes a second transistor, and the second transistor is configured to respond to the control signal output by the amplifying unit 23, so as to adjust the output current of the follower circuit; that is, the second transistor is a variable current load controlled by the control signal fed back by the amplifying unit 23, rather than a fixed current load, so that the output current of the follower circuit is adjustable, and the dynamic driving capability of the follower circuit is improved.
The control end of the amplifying unit 23 receives a bias voltage vb to work in an amplifying work area, the input end of the amplifying unit receives the negative feedback signal of the built-in negative feedback loop and performs amplification processing, and the output end of the amplifying unit outputs a control signal to dynamically adjust the load current of the first current load unit 22, so as to adjust the output current of the follower circuit. That is, the signal output from the first end of the input unit 21 is used as the signal input from the input terminal of the amplifying unit 23, and after the signal is amplified to generate a control signal, the control signal is output to the first current load unit 22, which is used to control the current load of the input unit 21, and the change of the load current is fed back to the input terminal of the amplifying unit 23 through the input unit 21, thereby forming a built-in negative feedback loop.
In a further embodiment, the type of component structure of the amplification unit 23 is complementary to the type of component structure of the input unit 21. For example, the transistor of the amplifying unit 23 and the transistor of the input unit 21 may be of complementary folded structures, so as to form a negative feedback loop with the input unit 21 and the first current load unit 22, and further dynamically adjust the load current at the output end of the follower through the negative feedback loop, so that the output current of the follower circuit is adjustable. However, the present invention is not limited to the structure of the amplifying unit 23, and may be an operational amplifier of any structure as long as it can form a negative feedback loop with the input unit 21 and the first current load unit 22.
In a further embodiment, the amplifying unit 23 includes a third transistor, which is configured to respond to the bias voltage vb to operate in an amplifying operation region, receive the negative feedback signal of the built-in negative feedback loop, perform amplification processing, output a control signal, and feed back the control signal to the control terminal of the first current load unit 22, so as to dynamically adjust the load current of the first current load unit 22. Specifically, the third transistor controls the second transistor to become a variable current load through a control signal, and the output of the third transistor can adjust the magnitude of the output impedance of the second transistor, so as to adjust the loop direct-current gain and the frequency domain characteristic of a built-in negative feedback loop, thereby improving the direct-current and frequency domain characteristics of the whole follower circuit. The third transistor is used as a circuit design parameter, and the transconductance of the first transistor and the transconductance of the second transistor can be adjusted, so that the output impedance and the output bandwidth of the follower circuit can be adjusted.
The second current load unit 24 is electrically connected to an input terminal of the amplifying unit 23, and is used as a current load of the amplifying unit 23. In a further embodiment, the second current load unit 24 is a first current source, and an equivalent output resistance thereof is used as a current load of the amplifying unit 23.
The utility model discloses built-in negative feedback loop can be adjusted the conduction function of the output bandwidth of follower circuit, frequency domain can dynamic adjustment simultaneously the output current of follower circuit, thereby improve the dynamic driving force of follower circuit. For current follower circuit, the utility model discloses on the basis that increases few devices, very big promotion the characteristic of the time domain and the frequency domain of follower circuit, the advantage is obvious. It should be noted that adding a potential adjusting unit such as a resistor in the negative feedback loop belongs to the scope of the present invention.
Preferably, the amplifying unit 23 further includes an adjustable load electrically connected to the control terminal of the first current load unit 22. By adjusting the impedance characteristic of the adjustable load, the control signal output to the control end of the first current load unit 22 can be adjusted, and the loop dc gain and the frequency domain characteristic of the built-in negative feedback loop can be adjusted, thereby adjusting the output bandwidth and the output impedance of the follower circuit. Namely, the adjustable load can be used as another circuit design parameter, and by designing the size of the adjustable load, the loop direct current gain and the frequency domain characteristics (phase domain degree, Q value and the like) of a built-in negative feedback loop can be adjusted, so that the equivalent resistance output by the second transistor is reduced, the gain loss of the follower circuit can be reduced, the effective output bandwidth and the dynamic driving capability of the follower circuit are improved, and the direct current and the frequency domain characteristics of the whole follower circuit are improved. In a further embodiment, the adjustable load may be a resistor, or a resistive load connected by a diode, or a parallel structure of a resistor and a capacitor, or a current source with an impedance greater than a predetermined value. The current source with high impedance characteristic is used as an adjustable load, and the loop gain can be further improved.
Preferably, the follower circuit structure further comprises a loop compensation load 25, wherein the loop compensation load 25 is electrically connected to the output end of the amplifying unit 23, and is used as a load of the amplifying unit 23 to adjust the phase domain degree of the built-in negative feedback loop, and simultaneously improve the stability of the built-in negative feedback loop. In further embodiments, the loop compensation load 25 may be a capacitor, or a structure in which a resistor is connected in series with a capacitor and then connected in parallel with a capacitor.
The following takes CMOS process as an example, and the following describes the structure of the follower circuit with built-in negative feedback according to the present invention with reference to the accompanying drawings and embodiments.
Referring to fig. 3, a schematic circuit diagram of a first embodiment of a follower circuit structure with built-in negative feedback according to the present invention is shown. In this embodiment, 3 insulated gate field effect transistors (MOS transistors), 1 current source and 1 adjustable load are adopted to form a follower circuit structure with built-in negative feedback, which not only improves the dynamic driving capability of the follower circuit, but also improves the output bandwidth of the follower circuit, reduces the equivalent output resistance of the follower circuit, and reduces the gain loss of the follower circuit.
Specifically, in the present embodiment, the input unit 21 includes a first transistor M21, the first current load unit 22 includes a second transistor M22, the amplifying unit 23 includes a third transistor M23 and an adjustable load, and the second current load unit 24 is a first current source It 21. The first transistor M21, the second transistor M22, the third transistor M23, and the adjustable load ZL form a built-in negative feedback loop.
The first transistor M21 and the second transistor M22 both employ NMOS transistors, the third transistor M23 employs PMOS transistors, and the adjustable load is a resistor ZL. The gate of the first transistor M21 is electrically connected to the input node vi of the follower circuit, the drain thereof is electrically connected to the source of the third transistor M23, the source thereof is the output node vo of the follower circuit, and the drain of the second transistor M22 is also electrically connected. The gate of the second transistor M22 is electrically connected to the drain of the third transistor M23, and its source is grounded. The gate of the third transistor M23 receives a bias voltage vb to operate in an amplification operating region, the source thereof receives the negative feedback signal of the built-in negative feedback loop and performs amplification processing, and the drain thereof outputs a control signal to the gate of the second transistor M22 to dynamically adjust the load current of the second transistor M22. The first end of the adjustable load ZL is electrically connected to the gate of the second transistor M22, and is also electrically connected to the drain of the third transistor M23, and the second end is grounded. One end of the first current source It21 is electrically connected to a power voltage VCC, and the other end is electrically connected to the source of the third transistor M23; an equivalent output resistance of the first current source It21 acts as a current load for the third transistor M23.
The transconductance of the first transistor M21 may determine the output impedance and output bandwidth of the follower circuit. The gate of the second transistor M22 is controlled by the control signal fed back by the third transistor M23 to become a variable current load instead of a fixed current load, so that the output current of the follower circuit is adjustable, and the dynamic driving capability of the follower circuit is improved. The output of the third transistor M23 can dynamically adjust the output impedance of the second transistor M22, and further adjust the loop dc gain and frequency domain characteristics of the built-in negative feedback loop, thereby improving the dc and frequency domain characteristics of the entire follower circuit. The third transistor M23 is used as a circuit design parameter to adjust the transconductance of the first transistor M21 and the transconductance of the second transistor M22, so that the output impedance and the output bandwidth of the follower circuit can be adjusted. The resistor ZL can be used as another circuit design parameter, and by designing the size of the resistor ZL, the loop dc gain and frequency domain characteristics (phase domain, Q value, etc.) of a built-in negative feedback loop can be adjusted, so that the equivalent resistor output by the second transistor M22 is reduced, thereby reducing the gain loss of the follower circuit, improving the effective output bandwidth and dynamic driving capability of the follower circuit, and improving the dc and frequency domain characteristics of the whole follower circuit. For current follower circuit, the utility model discloses on the basis that increases few devices, very big promotion the characteristic of the time domain and the frequency domain of follower circuit, the advantage is obvious.
The first transistor M21 and the second transistor M22 may both be NMOS transistors, PMOS transistors, NPN transistors, PNP transistors, or the like. The type of the third transistor M23 of the corresponding amplifying unit is complementary to the first transistor M21, and can form a negative feedback loop with the first transistor M21 and the second transistor M22, so that the load current at the output end of the follower can be dynamically adjusted through the negative feedback loop. For example, as shown in the present embodiment, the first transistor M21 and the third transistor M23 are complementary folded structures.
Referring to fig. 4, a schematic circuit diagram of a second embodiment of a follower circuit structure with built-in negative feedback according to the present invention is shown. The difference from the embodiment shown in fig. 3 is that in this embodiment, the adjustable load uses a second current source It42 with high impedance characteristic. Compared with the embodiment shown in fig. 3, the present embodiment can further improve the loop gain of the built-in negative feedback loop.
Referring to fig. 5, a schematic circuit diagram of a third embodiment of a follower circuit structure with built-in negative feedback according to the present invention is shown. The difference from the embodiment shown in fig. 4 is that, in this embodiment, the follower circuit structure further includes a loop compensation load 25; the loop compensation load 25 is a series structure of a resistor R51 and a capacitor C51. After the resistor R51 is connected in series with the capacitor C51, a first end of the resistor R51 is electrically connected to the drain of the third transistor M23, and a second end of the resistor R51 is grounded, which is used as a load of the third transistor M23 to adjust the phase domain of the built-in negative feedback loop and improve the stability of the built-in negative feedback loop.
The series arrangement of the resistor R51 and the capacitor C51 and the second current source It42 are all loads of the third transistor M23 in the common-gate amplifier circuit. The second current source It42 increases the loop gain of the built-in negative feedback loop; the resistor R51 and the capacitor C51 are connected in series to serve as a loop compensation load, the stability of a built-in negative feedback loop is improved, and meanwhile the phase domain (Q value) of the loop can be adjusted.
The loop compensation load 25 may also be connected to the drain of the third transistor M23 in fig. 3, and together with the resistor ZL, the loop compensation load may be used as a load of the third transistor M23, so as to improve the stability of the built-in negative feedback loop, and at the same time, adjust the phase domain (Q value) of the loop.
Referring to fig. 6, a schematic circuit diagram of a fourth embodiment of a follower circuit structure with built-in negative feedback according to the present invention is shown. The difference from the embodiment shown in fig. 3 is that, in the present embodiment, the first transistor M21 and the second transistor M22 both use PMOS transistors, and the third transistor M23 uses NMOS transistors.
Specifically, the gate of the first transistor M21 is electrically connected to the input node vi of the follower circuit, the drain thereof is electrically connected to the source of the third transistor M23, the source thereof is used as the output node vo of the follower circuit, and the drain of the second transistor M22 is electrically connected. The gate of the second transistor M22 is electrically connected to the drain of the third transistor M23, and the source thereof is connected to a power supply voltage VCC. The gate of the third transistor M23 receives a bias voltage vb to operate in an amplification operating region, the source thereof receives the negative feedback signal of the built-in negative feedback loop and performs amplification processing, and the drain thereof outputs a control signal to be fed back to the gate of the second transistor M22, so as to dynamically adjust the load current of the second transistor M22. A first terminal of the adjustable load ZL is electrically connected to the gate of the second transistor M22 and the drain of the third transistor M23, and a second terminal thereof is connected to the power supply voltage VCC. One end of the first current source It21 is electrically connected to the source of the third transistor M23, and the other end is grounded; an equivalent output resistance of the first current source It21 acts as a current load for the third transistor M23. The working principle is similar to that of the embodiment shown in fig. 3, and the description is omitted here.
Similar to the correspondence between the embodiment using NMOS transistors as input shown in fig. 3 and the embodiment using PMOS transistors as input shown in fig. 6, the PMOS transistors can also be used as input in fig. 4 and 5, and the corresponding implementation method can refer to that shown in fig. 6, and is not described herein again. Accordingly, in the embodiments shown in fig. 3, 4, 5, and 6, NPN/PNP may be used instead of corresponding NMOS/PMOS to achieve the same functions, and the description thereof is omitted here.
The foregoing is only a preferred embodiment of the present invention, and it should be noted that, for those skilled in the art, a plurality of improvements and decorations can be made without departing from the principle of the present invention, and these improvements and decorations should also be regarded as the protection scope of the present invention.
Claims (11)
1. A follower circuit structure with built-in negative feedback, comprising: the circuit comprises an input unit, a first current load unit, a second current load unit and an amplifying unit, wherein the input unit, the first current load unit and the amplifying unit form a built-in negative feedback loop;
the input end of the input unit is electrically connected to the input node of the follower circuit, the first end of the input unit is electrically connected to the input end of the amplifying unit, and the output end of the input unit is used as the output node of the follower circuit;
a first end of the first current load unit is electrically connected to the output end of the input unit, a control end of the first current load unit is electrically connected to the output end of the amplifying unit, and the first current load unit is used as a current load of the input unit to control the output current of the follower circuit;
the control end of the amplifying unit receives a bias voltage to work in an amplifying working area, the input end of the amplifying unit receives a negative feedback signal of the built-in negative feedback loop and performs amplification processing, and the output end of the amplifying unit outputs a control signal to dynamically adjust the load current of the first current load unit so as to adjust the output current of the follower circuit;
the second current load unit is electrically connected to the input terminal of the amplifying unit, and is used as a current load of the amplifying unit.
2. The follower circuit arrangement of claim 1, wherein a component arrangement type of the amplification unit is complementary to a component arrangement type of the input unit.
3. The follower circuit arrangement of claim 1, wherein the input unit comprises a first transistor, the first current load unit comprises a second transistor;
the first transistor is used for responding to the input of the follower circuit and outputting an output signal;
the second transistor is used for responding to the control signal output by the amplifying unit so as to adjust the output current of the follower circuit.
4. The follower circuit structure according to claim 3, wherein each of the first transistor and the second transistor is an NMOS transistor;
a gate of the first transistor is electrically connected to an input node of the follower circuit, a drain thereof is electrically connected to an input terminal of the amplifying unit, a source thereof is an output node of the follower circuit, and simultaneously, a drain thereof is electrically connected to a drain of the second transistor;
the gate of the second transistor is electrically connected to the output terminal of the amplifying unit, and the source thereof is grounded.
5. The follower circuit arrangement of claim 1, wherein the second current loading unit is a first current source.
6. The follower circuit structure as claimed in claim 1, wherein the amplifying unit comprises a third transistor, the third transistor is configured to operate in an amplifying operation region in response to the bias voltage, receive the negative feedback signal of the built-in negative feedback loop, perform amplification processing, and output a control signal to the control terminal of the first current load unit to control the current load of the first current load unit.
7. The follower circuit structure of claim 6, wherein the third transistor is a PMOS transistor;
the third transistor has a gate receiving the bias voltage to operate in an amplification operating region, a source electrically connected to the first end of the input unit to receive a negative feedback signal of the built-in negative feedback loop, and a drain electrically connected to the control end of the first current load unit to output a control signal.
8. The follower circuit arrangement of claim 1, wherein the amplifying cell further comprises an adjustable load electrically connected to the control terminal of the first current load cell;
and adjusting the control signal output to the control end of the first current load unit by adjusting the impedance characteristic of the adjustable load, thereby adjusting the loop direct-current gain and the frequency domain characteristic of the built-in negative feedback loop.
9. The follower circuit arrangement of claim 8, wherein the adjustable load is a resistor, a diode-connected resistive load, a resistor-capacitor parallel arrangement, or a current source having an impedance greater than a predetermined value.
10. The follower circuit arrangement of claim 1, wherein said follower circuit arrangement further comprises a loop compensation load;
the loop compensation load is electrically connected to the output end of the amplifying unit and used as the load of the amplifying unit to adjust the phase domain degree of the built-in negative feedback loop.
11. The follower circuit arrangement of claim 10, wherein the loop compensation load is a capacitor, or a series arrangement of a resistor and a capacitor connected in parallel with a capacitor.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110212876A (en) * | 2019-06-24 | 2019-09-06 | 南京芯耐特半导体有限公司 | Follower circuit structure with built-in negative-feedback |
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| CN110212876A (en) * | 2019-06-24 | 2019-09-06 | 南京芯耐特半导体有限公司 | Follower circuit structure with built-in negative-feedback |
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