CN210156716U - Semiconductor laser stepped structure heat sink - Google Patents
Semiconductor laser stepped structure heat sink Download PDFInfo
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- CN210156716U CN210156716U CN201921025853.5U CN201921025853U CN210156716U CN 210156716 U CN210156716 U CN 210156716U CN 201921025853 U CN201921025853 U CN 201921025853U CN 210156716 U CN210156716 U CN 210156716U
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- 239000013307 optical fiber Substances 0.000 description 3
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Abstract
The utility model provides a semiconductor laser stair structure is heat sink contains: a stepped heat sink; the step heat sink is provided with a plurality of step planes, and the height difference between every two adjacent step planes presents an increasing trend from the middle to the two sides; the middle part of the stepped heat sink is provided with a stepped plane which is parallel to the bottom surface; laser output by the laser chip is shaped by the fast axis collimating mirror and the slow axis collimating mirror, and the light spots are rearranged by the reflector; the utility model effectively avoids the shielding of the reflecting mirror to the reflected beam on the high-order plane through the control of the height difference of the stepped plane, and improves the transmission efficiency of the light beam; the angle control of the stepped surface rearranges the light spots of the multiple beams of laser, improves the laser power density of the central area of the light spots, reduces the spherical aberration of the focusing lens, and effectively improves the coupling efficiency of multi-chip laser focusing.
Description
Technical Field
The application belongs to the technical field of laser, and particularly relates to a semiconductor laser packaging technology.
Background
The semiconductor laser has the advantages of small volume, light weight, long service life, wide wavelength coverage range and the like, but the output laser spot has great divergence due to the limitation of the chip size, the output spot characteristic of the semiconductor laser is effectively improved by the tail fiber output technology of the semiconductor laser, and the semiconductor laser is widely applied to the fields of military affairs, medical treatment, communication and the like.
With the improvement of the process technology level, the output power of a single laser chip can achieve 20W power output, but the power level of the single laser chip can not meet the requirement of industrial application. In order to realize high-power semiconductor laser output, two process methods are usually adopted to realize: the other is that a laser chip with a bar structure is adopted for beam shaping, rearrangement and coupling, the output power of the laser chip usually reaches KW power level, but the laser energy and power density are lower; the other method is to carry out spatial structure shaping on light output by a plurality of laser chips and couple the light into an optical fiber for transmission, and the mode realizes the tight arrangement of light beams of output laser beams in front of a focusing lens by arranging the spatial positions of the laser chips, reduces the size of light spots and realizes high-efficiency coupling. The mode of combining multiple laser chips has been adopted to realize 300W laser power output at present, each laser chip usually adopts a step heat sink structure as a welding heat sink to realize the step-shaped spatial arrangement of the laser chips, and a reflector is arranged at each step to realize the beam deflection of each laser chip. The arrangement of the height difference of the stepped heat sink is overlarge, so that the final rearranged spot shape is overlarge, and the aberration introduced in the lens focusing process is also larger; the height difference is set to be too small, the set reflector intercepts high-order laser beams, so that part of laser cannot be coupled to the optical fiber through the focusing lens, and the coupling efficiency of the laser is directly reduced under the two conditions.
SUMMERY OF THE UTILITY MODEL
In view of the above problems, the present application provides a novel stepped heat sink.
The technical scheme adopted by the application for solving the technical problems is as follows: a semiconductor laser stepped structure heat sink, comprising: a stepped heat sink; a plurality of steps are arranged on the stepped heat sink; the laser chips are respectively welded on the steps, so that the spatial distribution of the laser chips in the vertical direction is realized; laser output by the laser chip is shaped by the fast axis collimating mirror and the slow axis collimating mirror, and the light spots are rearranged by the reflector.
According to the utility model discloses an embodiment, wherein the chip welded end is a little higher than the other end on each ladder face of above-mentioned stair structure heat sink, the fixed of the lens of being convenient for.
According to the utility model discloses an embodiment, wherein the difference in height value of each ladder face of above-mentioned stair structure heat sink presents the trend of increasing to both sides from the centre. Wherein the intermediate position is defined as: when the number of the steps is odd, the middle step position is the middle position; when the number of steps is even, the two planes in the middle are at the middle position, and the change of the height difference value starts to change from the two Ge steps to the two sides.
According to the utility model discloses an embodiment, wherein the heat sink intermediate position ladder face of above-mentioned stair structure is parallel structure with the bottom surface.
According to the utility model discloses an embodiment, wherein above-mentioned stair structure is heat sink except that intermediate position ladder off-plate, the ladder face of all the other both sides all is the structure of certain angle with the bottom surface. When the number of steps is even, the middle two planes are arranged as parallel planes.
According to the utility model discloses an embodiment, wherein the angle that the ladder face was personally submitted with the end above the heat sink intermediate position ladder face of above-mentioned stair structure is the negative value, and the angle that the ladder face was personally submitted with the end below the intermediate position ladder face is the positive value.
Compared with the prior art, the application can obtain the following technical effects:
1) the utility model discloses a heat sink each ladder face difference in height of stair structure presents the trend of increasing, can effectively avoid the ladder face on fixed speculum to its adjacent laser beam's sheltering from, can improve the laser power level before transmitting to focusing lens.
2) The utility model discloses a stair structure with certain inclination rearranges reflection laser beam, can reduce the beam diameter of focusing lens front beam, improves lens central point department laser power density in the light beam simultaneously, improves the coupling efficiency of lens. The heat sink coupling process adopting the structure is convenient to debug, the laser beam combination efficiency is effectively improved, and the laser output with higher power can be realized.
Drawings
The accompanying drawings, which are included to provide a further understanding of the application and are incorporated in and constitute a part of this application, illustrate embodiment(s) of the application and together with the description serve to explain the application and not to limit the application. In the drawings:
fig. 1 is a schematic view of a stepped heat sink according to an embodiment of the present invention;
fig. 2 is a schematic side view of the stepped heat sink according to an embodiment of the present invention;
fig. 3 is a schematic diagram illustrating the arrangement of the laser chip and the optical lens on the stepped heat sink according to an embodiment of the present invention;
the laser chip comprises a laser chip 10, a fast axis collimating mirror 20, a slow axis collimating mirror 30 and a reflecting mirror 40.
Detailed Description
Embodiments of the present application will be described in detail with reference to the drawings and examples, so that how to implement technical means to solve technical problems and achieve technical effects of the present application can be fully understood and implemented.
Examples
Fig. 1 is a schematic diagram of the heat sink with stepped structure of the semiconductor laser according to an embodiment of the present invention, as shown in the figure: a stepped structure heat sink for a semiconductor laser comprises: a stepped heat sink; the ladder heat sink is provided with a plurality of ladders, and the height difference value of each ladder presents an increasing trend from the middle to two sides, so that the reflector arranged on the ladder surface can be effectively prevented from shielding the reflected light beams on the ladder surface, and the light beam transmission efficiency is improved; the stepped surface and the bottom surface at the middle position on the stepped heat sink are in a parallel plane structure; the other two sides of the stepped surface except the stepped surface at the middle position on the stepped heat sink are in a plane structure with a certain angle with the bottom surface; the angle of the upper step surface of the middle step surface is a negative value, and the angle of the lower step surface is a positive value.
Fig. 2 is a schematic side view of the stepped heat sink of the semiconductor laser device according to an embodiment of the present invention, in which the stepped surface at the middle position of the stepped heat sink is parallel to the bottom surface, the upper side step of the stepped surface at the middle position is at an angle of- α degrees with the bottom surface, and the lower side step of the stepped surface at the middle position is at an angle of α degrees with the bottom surface.
Fig. 3 is the utility model relates to an embodiment's ladder is heat sinks and is gone up laser chip and optical lens and sets up the sketch map, and laser chip 10 welds the A end that the ladder was heat sink, and the light of laser chip 10 output realizes the fast and slow axle compression of laser light version behind fast axle collimating mirror 20, the slow axle collimating mirror 30 behind it, and the facula after the compression is long and thin bar. The elongated light beam is deflected 45 degrees in the transmission direction by the reflector 40 arranged at 45 degrees at the B end of the stepped heat sink. Each step deflects the laser beam, the rearrangement of the light spots is realized, the light spots after the rearrangement are in a horizontal light spot state except the light spots reflected by the step surface at the middle position, and the rest light spots are inclined light spots at a certain angle due to the inclination of the step surface, the rearrangement and superposition of the light spots effectively increase the laser power density in the central area of the light spots, so that the rearranged light spots are more concentrated, the spherical aberration of the focusing lens for the rearrangement of the light spots is reduced, and the coupling efficiency of the optical fiber is effectively improved.
The foregoing description shows and describes several preferred embodiments of the present application, but as aforementioned, it is to be understood that the application is not limited to the forms disclosed herein, but is not to be construed as excluding other embodiments and is capable of use in various other combinations, modifications, and environments and is capable of changes within the scope of the application as described herein, commensurate with the above teachings, or the skill or knowledge of the relevant art. And that modifications and variations may be effected by those skilled in the art without departing from the spirit and scope of the application, which is to be protected by the claims appended hereto.
Claims (5)
1. A semiconductor laser stepped structure heat sink, comprising:
a stepped heat sink;
a plurality of steps are arranged on the stepped heat sink; the laser chips are respectively welded on the step surfaces; and a fast axis collimating mirror, a slow axis collimating mirror and a reflecting mirror are sequentially arranged on the light propagation path of the laser chip output laser.
2. The stepped structure heat sink of a semiconductor laser as claimed in claim 1, wherein: the height difference of each step surface of the step structure heat sink is increased from the middle to two sides.
3. The stepped structure heat sink of a semiconductor laser as claimed in claim 1, wherein: the stepped surface in the middle of the stepped structure heat sink is parallel to the bottom surface plane.
4. A stepped structure heat sink for a semiconductor laser as claimed in claim 3 wherein: the rest stepped surfaces of the stepped structure heat sink form a certain angle with the plane of the bottom surface.
5. The stepped structure heat sink of claim 4, wherein: the angle that ladder face and bottom were personally submitted above the ladder face of ladder structure heat sink intermediate position ladder face is the negative value, and the angle that ladder face and bottom were personally submitted below the intermediate position ladder face is the positive value.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921025853.5U CN210156716U (en) | 2019-07-03 | 2019-07-03 | Semiconductor laser stepped structure heat sink |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921025853.5U CN210156716U (en) | 2019-07-03 | 2019-07-03 | Semiconductor laser stepped structure heat sink |
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| CN210156716U true CN210156716U (en) | 2020-03-17 |
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| CN201921025853.5U Active CN210156716U (en) | 2019-07-03 | 2019-07-03 | Semiconductor laser stepped structure heat sink |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110429465A (en) * | 2019-07-03 | 2019-11-08 | 江苏天元激光科技有限公司 | A kind of semiconductor laser hierarchic structure is heat sink |
| CN112558283A (en) * | 2020-12-30 | 2021-03-26 | 中国科学院长春光学精密机械与物理研究所 | Relay imaging system with achromatic aberration and distortion elimination functions for snapshot type imaging spectrometer |
-
2019
- 2019-07-03 CN CN201921025853.5U patent/CN210156716U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110429465A (en) * | 2019-07-03 | 2019-11-08 | 江苏天元激光科技有限公司 | A kind of semiconductor laser hierarchic structure is heat sink |
| CN112558283A (en) * | 2020-12-30 | 2021-03-26 | 中国科学院长春光学精密机械与物理研究所 | Relay imaging system with achromatic aberration and distortion elimination functions for snapshot type imaging spectrometer |
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Address after: Entrepreneurship Service Center, High-tech Zone, No. 99, Zhulin Road, Danyang City, Zhenjiang City, Jiangsu Province 212300 Patentee after: Jiangsu Skyera Laser Technology Co.,Ltd. Address before: 212300 No.8, high tech industrial concentration zone, Danyang City, Zhenjiang City, Jiangsu Province Patentee before: JIANGSU SKYERALASER TECHNOLOGY CO.,LTD. |