CN210108416U - Embedded composite sensor - Google Patents
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- CN210108416U CN210108416U CN201920843204.XU CN201920843204U CN210108416U CN 210108416 U CN210108416 U CN 210108416U CN 201920843204 U CN201920843204 U CN 201920843204U CN 210108416 U CN210108416 U CN 210108416U
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Abstract
The utility model discloses an embedded composite sensor, which comprises a voltage sensor, a current sensor, a temperature sensor, an MCU singlechip, a power semiconductor chip, wherein the sensor is embedded into the power semiconductor chip, a voltage induction probe is clung to the input end of the chip, the current sensor is sleeved into the input end of the chip, the temperature sensor is clung to the chip, the sensor and the MCU singlechip are compounded on a mounting substrate, and the power semiconductor chip is mounted on a heat dissipation substrate; the sensor comprises a voltage sensing circuit, a current sensing circuit, a temperature sensing circuit and an MCU singlechip circuit which are all compounded on a mounting substrate to form a complete compound. The utility model discloses obtain electric current, voltage, temperature control signal from power semiconductor chip position, feed back control center through built-in MCU singlechip processing back, can handle power semiconductor function module control with electrical apparatus operating condition, protect with electrical apparatus and load safety, overcome the defect that current power semiconductor device does not have data input/output function.
Description
Technical Field
The utility model belongs to the technical field of industrial automation control, a power semiconductor device application field is related to the collection and the transmission of data, in particular to embedded compound sensor.
Background
At present, intelligent single-phase alternating-current solid-state relays, intelligent three-phase alternating-current solid-state relays, intelligent direct-current solid-state relays, IGBT combined control modules IPM and the like with an automatic protection function are already widely applied to industrial motors, controllable resistive heaters and other occasions. The load power can be accurately controlled by setting the output power to adjust the temperature, the rotating speed, the flow, the light brightness and the like. However, the IPM power module or the intelligent industrial controller composed of various power semiconductors has no data input and output functions.
At present, a more intelligent power semiconductor device is needed in industrial control occasions, and a power controller composed of power semiconductors is required to be capable of intelligently performing reasonable induction analysis and judgment of current, voltage and temperature on working objective conditions, making effective rapid response and effective processing, and having comprehensive capability of fully protecting the intelligent solid-state relay device and a load to operate safely and reliably. And a group of signals for outputting the working state of the load driven by the power module to the data control center so as to meet the requirement of industrial automatic production, complete the acquisition and transmission of data and finally realize the comprehensive utilization of the data by processing the data.
SUMMERY OF THE UTILITY MODEL
The real demand to the not enough of prior art and market, the utility model provides an embedded compound sensor constitutes intelligent industrial power control module through imbedding the sensor in various power semiconductor device to various basic data are gathered in the response. The power semiconductor device comprises a silicon controlled rectifier device, an IGBT (insulated gate bipolar transistor) and various novel wide bandgap semiconductor power devices, the basic embedded composite sensor can be used for inducting and collecting three basic transmission parameters of current, voltage and temperature, and can be implanted with vibration, pressure and other information required to be inducted and collected according to actual working requirements. The intelligent industrial controller can be applied to IPM power modules or intelligent industrial controllers composed of various power semiconductors, basic data can be well connected with a manufacturing execution management system in industrial automation information control, and a good control method and enterprise information management can be provided for single large-batch production and mixed manufacturing enterprises with various small-batch production and large-batch production. Meanwhile, a good information basis is provided for the feedback of the Internet of things and big data information.
The embedded composite sensor obtains control signals of current, voltage, temperature and the like from a power semiconductor chip part, can implant vibration, pressure and other information required to be sensed according to actual work requirements, is accessed into I/O interfaces of various communication protocols after being processed by a built-in MCU singlechip, and can process the instant working state working data of electric appliances controlled by various functional modules consisting of power semiconductors by a bidirectional communication function of feeding back the data to a control center in a wired or wireless mode through a data bus, thereby comprehensively protecting the working states of the electric appliances and loads to overcome the defect that an IPM power module consisting of various power semiconductors or an intelligent industrial controller has no data input and output functions. The adopted specific technical scheme is as follows:
an embedded composite sensor comprises voltage, current and temperature sensors, an MCU (microprogrammed control unit) singlechip and a power semiconductor chip; one end of the voltage sensor, one end of the current sensor and one end of the temperature sensor are embedded into the power semiconductor chip, the other end of the voltage sensor, the voltage sensing probe and the current sensor are tightly attached to the input end of the power semiconductor chip, the current sensor is sleeved into the input end of the power semiconductor chip, and the temperature sensor is tightly attached to the power semiconductor chip; the voltage sensor, the current sensor, the temperature sensor and the MCU singlechip are compositely arranged on a mounting substrate, the mounting substrate is arranged on a power semiconductor chip, and the power semiconductor chip is arranged on a heat dissipation substrate of the power semiconductor chip; the temperature sensor obtains the working temperature of the power semiconductor chip, and the voltage and current sensors obtain dynamic and static working information;
the circuit comprises four parts of circuits of voltage sensing, current sensing, temperature sensing and an MCU singlechip, and the four parts of circuits are all compounded on the mounting substrate to form a complete complex; the voltage sensing, the current sensing and the temperature sensing synchronously output a voltage signal, a current signal and a temperature signal sensed from the power semiconductor chip to the MCU singlechip; the MCU singlechip analyzes and judges through a set program, internally sends out a work control instruction, and externally transmits information of instant working current, voltage and temperature;
the voltage sensing circuit part comprises a virtual capacitor (C1), a capacitor (C2) and a resistor (R1), wherein the virtual capacitor (C1) is tightly attached to the input end of the power semiconductor device through a voltage sensing probe, the capacitor (C2) and the resistor (R1) are quickly released by a G pin of a MOSFET (metal-oxide-semiconductor field effect transistor) Q1, dynamic voltage is quickly measured, the MOSFET Q1 is linearly amplified under the action of a power supply (VCC), and a voltage signal (V1) is output to the MCU singlechip (U1) at the resistor (R2);
the current sensing circuit part comprises a current sensor (L1), a resistor (R3) and a resistor (R4), wherein the annular current sensor (L1) is sleeved at the input end of the power semiconductor device, a phase ratio voltage is induced on the annular current sensor (L1) when working current passes through, voltage is divided through the resistor (R3) and the resistor (R4), a current signal (V2) is output to the MCU singlechip (U1), and an output (VP2) directly triggers the short-circuit protection circuit;
the temperature sensing circuit part directly approaches to the power semiconductor chip by using a temperature sensor (U2) and outputs a temperature signal (V3) to the MCU singlechip (U1);
the MCU singlechip (U1) performs composite operation processing on the signals according to a set program;
the MCU singlechip is provided with an external data communication interface, receives an external control signal and feeds back internal data to external equipment in a wired or wireless data transmission mode, so that a bidirectional communication function is realized.
Further, the mounting substrate is a micro ceramic copper clad laminate (DBC).
Furthermore, the current sensor is a ring current sensor and has an overcurrent protection function.
Furthermore, the MCU singlechip reserves a signal input interface so as to input an external information signal.
Further, the external information signal includes pressure, vibration, infrared temperature, and visual signal.
Further, the composite operation processing comprises fault detection and temperature compensation.
Further, the MCU singlechip can generate a unique code possessed by an individual so as to facilitate troubleshooting positioning.
Furthermore, the MCU singlechip has self-zeroing, self-calibration and self-correction functions inside.
And further, a group of power supplies are used for supplying power, and output signals collected by a plurality of composite working state ends are output.
The structure, principle, function and beneficial effect of the adopted technical scheme are described as follows:
an embedded composite sensor is prepared as setting voltage, current and temperature basic sensors or other required sensors and MCU single chip on micro DBC (ceramic copper clad plate), embedding said sensors in various functional modules formed by power semiconductor according to different power grades, setting single embedded composite sensor to have unique code and using MCU single chip to cooperate with each other to collect input working signal, output working signal, working state signal and logic expression and processing method of collected signals.
The single embedded compound sensor individual has a unique code to facilitate troubleshooting positioning.
The embedded composite sensor is embedded in power semiconductors of various forms, the temperature sensing can obtain the direct working temperature of various power semiconductor chips, and the voltage and current sensors are tightly attached to the input ends of various power semiconductors to obtain dynamic and static working information.
The embedded composite sensor can simultaneously acquire instant information of working current, voltage, temperature and the like, and internal operation is performed under the action of the MCU, wherein the functions comprise fault detection, temperature compensation and the like.
A group of power supplies can be used for the embedded composite sensor and the MCU, and output signals collected by a plurality of composite working state ends are output.
The current sensor in the embedded composite sensor has an overcurrent protection function, and when a short circuit phenomenon occurs, the power semiconductor device is directly controlled to be turned off at a microsecond level without MCU operation, so that the safety of the power semiconductor device and electrical appliances is ensured.
The MCU singlechip in the embedded composite sensor can be provided with a relevant input interface and is connected with information such as pressure, vibration, infrared temperature, vision and the like which need to be processed under actual working conditions to enter composite operation processing.
The functions of self-zero calibration, self-calibration and self-correction can be realized under the processing of the MCU of the singlechip.
The various power semiconductor devices (modules) are required to be provided with a monitoring protection state in the middle of the whole working process, namely, the intelligent reasonable induction analysis, judgment, effective and rapid response and effective processing of current, voltage and temperature on the working objective conditions, and the comprehensive capability of fully protecting the various power semiconductor devices (modules) and the safe and high-reliability operation of loads. And a group of signals for outputting the working state of the load driven by various power semiconductor devices (modules) to a control center, and performing pre-inspection and early warning under the comparison of industrial big data so as to meet the basic data requirement of industrial datamation production fine management.
Various power semiconductor devices (modules) generally have the following control modes, such as AC-DC (alternating current to direct current), DC-DC (direct current to direct current), DC-AC (direct current to alternating current, variable frequency) and the like. The control mode comprises an alternating current (direct current) unidirectional power semiconductor device (module) and a three-phase alternating current (direct current) power semiconductor device (module), and the logic representation and the method of the working state are different. The industrial control three-phase alternating current power semiconductor device (module) is more common, and the working state logic expression and method comprises the functions of judging whether each phase of alternating current of the three-phase alternating current has phase failure or overcurrent (short circuit) and the like.
Drawings
Fig. 1 is a schematic diagram of data transmission of an embedded composite sensor.
Fig. 2 is a schematic structural diagram of an embedded composite sensor.
Fig. 3 is a circuit schematic of an embedded composite sensor.
Fig. 4 is a schematic diagram of the embedded operation of the embedded composite sensor in the IGBT power module.
Fig. 5 is a flowchart of the operation of the three-phase ac embedded composite sensor.
Detailed Description
In order to clearly understand the objects, technical solutions and advantages of the present invention, the following description of the present invention with reference to the accompanying drawings is provided for further describing the present invention in detail, and the exemplary embodiments and descriptions thereof of the present invention are only used for explaining the present invention, and are not to be taken as limiting the present invention.
Referring to fig. 1, fig. 1 is a schematic diagram of data transmission of an embedded composite sensor according to the present invention, where the data transmission process is as follows:
the embedded composite sensor is embedded in the power semiconductor chip, the MCU singlechip sends an input control signal A and a self-checking signal E to the embedded composite sensor, and the embedded composite sensor outputs a voltage signal B, a current signal C and a temperature signal D to the MCU singlechip. The MCU singlechip generates a unique code of an individual, and after the data is operated and processed, the data including a device code (the unique code) is transmitted to a big data center and a control center (including the control center, a PLC industrial control center or a PC data processing center) in a wired or wireless mode. Then, the big data center sends a comparison signal whether the big data center works normally or not to the control center so as to achieve the function of pre-detection and early warning. And a related input interface is reserved in the MCU, and information such as pressure, vibration, infrared temperature, vision and the like required to be processed under actual working conditions is accessed to the MCU and subjected to composite operation processing.
Example one
Referring to fig. 2, fig. 2 is a schematic structural diagram of an embedded composite sensor. One end of the embedded composite sensor is embedded in various power semiconductor device chips, the other end of the embedded composite sensor is tightly attached to the input end 1 of the power semiconductor device, the annular current sensor 3 is sleeved in the input end 1 of the power semiconductor device, and the temperature sensor 6 is infinitely close to the power semiconductor chip 7. Wherein, the voltage induction probe 2, the annular current sensor 3, the temperature sensor 6 and the MCU singlechip 5 are all compositely arranged on the miniature DBC (ceramic copper clad laminate) composite sensor mounting substrate 6. The power semiconductor chip 7 can be embedded into various functional modules formed by power semiconductors according to various power grades, and is welded on the heat dissipation substrate 8 of the power semiconductor device.
Referring to fig. 3, fig. 3 is a circuit diagram of an embedded composite sensor. The circuit of the embedded composite sensor consists of a voltage sensor 3-1, a current sensor 3-2, a temperature sensor 3-3 and an MCU singlechip 3-4. All of which are compounded on a miniature DBC (ceramic-copper composite) composite sensor mounting substrate to form an integral composite. The voltage sensor 3-1, the current sensor 3-2 and the temperature sensor 3-3 can simultaneously (synchronously) output a voltage signal V1, a current signal V2 and a temperature signal V3 which are sensed from the power semiconductor device to the MCU singlechip U1. The MCU singlechip U1 analyzes and judges through a set program, gives various different work control instructions to the MCU singlechip U1, and transmits instant work current, voltage, temperature and other required information to the outside (a big data center, a control center and the like).
C1 in the voltage sensing part 3-1 is a virtual capacitor formed by tightly attaching the voltage sensing probe 2 to the input end 1 of the power semiconductor device, and the non-contact voltage measurement can measure the charged static voltage at a single end. The capacitor C2 and the resistor R1 are used for quickly releasing a G pin of the MOSFET Q1, dynamic voltage can be quickly measured, the MOSFET Q1 is linearly amplified under the action of a power supply VDD, and a voltage signal V1 is output to the MCU singlechip U1 at the resistor R2.
The current sensor 3-2 is partially sleeved in the input end 1 of the power semiconductor device through an annular current sensor L1, when working current passes through the annular current sensor L1, phase proportion voltage is induced, the voltage is divided through resistors R3 and R4, a current signal V2 is output to the MCU singlechip U1, and VP2 is output to directly trigger a short-circuit protection circuit.
The temperature sensing part 3-3 is directly infinitely close to a power semiconductor chip by a chip-level digital temperature sensor U2, and outputs a temperature signal V3 to an MCU singlechip U1.
The MCU singlechip 3-4U1 part can be composed of 8-bit, 16-bit, 32-bit and other MCU singlechips with different grades as required, after obtaining V1 voltage signal, V2 current signal and V3 temperature signal, and also can expand the required vibration, pressure, infrared and vision signals, the MCU singlechip U1 carries out composite operation processing according to the set program, and the functions of fault detection, temperature compensation and the like are included.
The MCU singlechip U1 can also generate a unique code which is possessed by an individual so as to facilitate the location of fault maintenance.
The MCU singlechip is internally controlled by a VP1 signal, Vin input control signals are obtained from a control center, Vout outputs dynamic data to be stored in a big data center and fed back to the control center (a PLC industrial control center or a PC), the output signal Vout is a modulation signal and can be fed back to the control center in a wired or wireless mode through I/O interfaces of various communication protocols through a data bus in time, and the bidirectional communication function is realized.
The embedded composite sensors can be used in the power semiconductor devices (modules) one by one according to the number of the power semiconductor devices in the modules, namely, one embedded composite sensor is used in the power semiconductor device (module) controlled by a single phase, three embedded composite sensors are used in the power semiconductor device (module) controlled by a three phase, for example, six to seven embedded composite sensors are used in the IGBT frequency conversion module, and the like.
The MCU singlechip has the functions of self-zeroing, self-calibration and self-correction.
Example two
Referring to fig. 4, fig. 4 is a schematic diagram illustrating an embedded operation of an embedded composite sensor in an IGBT power module. An embedded composite sensor is embedded in an IGBT power module chip, a positive power source end 4-1 is input, an embedded composite sensor mounting substrate 4-2 is embedded on the IGBT power module chip 4-4, a temperature sensor is infinitely close to the IGBT power module chip 4-4, an MCU singlechip and an input/output interface 4-5 are mounted on one side and connected with a control center, an upper IGBT power module and a lower IGBT power module form a phase-change frequency power source output terminal lead 4-6, a current sensor 4-7 is sleeved on the phase-change frequency power source output terminal lead 4-6, and an input negative power source end 4-8 forms a complete industrial intelligent controller.
The following describes the working process of the embedded composite sensor in detail by taking three-phase alternating current as an example.
Referring to fig. 5, fig. 5 is a flowchart illustrating the operation of the three-phase ac embedded composite sensor. According to the requirements of three-phase AC power semiconductor devices (modules), three groups of power semiconductor devices (modules) work simultaneously, and three groups of embedded composite sensors share one MCU (microprogrammed control unit) and are subjected to cooperative operation processing. In order to express that the working states of each phase voltage are different, Va, Vb and Vc respectively represent working voltages of a phase, b phase and c phase of three-phase alternating current, Ia, Ib and Ic represent working currents of the a phase, b phase and c phase of the three-phase alternating current, Ta, Tb and Tc represent working temperatures of chips of power semiconductor devices of the a phase, b phase and c phase of the three-phase alternating current of three groups of power semiconductor devices (modules), a control center outputs a control signal according to a device code, and the embedded composite sensor starts to work under the condition that an MCU singlechip obtains the control signal Vin, wherein the specific working process is as follows:
1. a, inputting a control signal, B, a voltage signal, Va and a phase working voltage, Vb and B phase working voltage, Vc and C phase working voltage, C, Ia and a phase working current, Ib and B phase working current, Ic and C phase working current, D, Ta and a phase working temperature signal, Tb and B phase working temperature signal, Tc and C phase working temperature signal, E and self-checking working state are all not signals, and the embedded composite sensor, the intelligent power semiconductor device and the driven load are all in a shutdown working state.
2. The system comprises an input control signal A, an input control signal B, a voltage signal, working voltages of Va and a phases, working voltages of Vb and B phases, working voltages of Vc and C phases, working currents of C, Ia and a phases, working currents of Ib and B phases, working currents of Ic and C phases, working temperature signals of D, Ta and a phases, working temperature signals of Tb and B phases, working temperature signals of Tc and C phases and a self-calibration working state of E and start.
3. A, inputting a control signal without a signal, B, a voltage signal, Va and a phases have working voltage, Vb and B phases have working voltage, Vc and C phases have working voltage, C, Ia and a phases have no working current, Ib and B phases have no working current, Ic and C phases have no working current, D, Ta and a phases have working temperature signals, Tb and B phases have working temperature signals, Tc and C phases have working temperature signals, E and self-checking work is completed, and the embedded composite sensor, the intelligent power semiconductor device and a driven load are all in a preparation working state.
4. A, inputting a control signal, B, a voltage signal, Va and a phases have working voltage, Vb and B phases have working voltage, Vc and C phases have working voltage, C, Ia and a phases have no working current, Ib and B phases have no working current, Ic and C phases have no working current, D, Ta and a phases have working temperature signals, Tb and B phases have working temperature signals, Tc and C phases have working temperature signals, E and self-checking work is completed, and faults are as follows: checking the wiring of a, b and c three-phase load power system.
5. A, inputting a control signal, B, a voltage signal, Va and a phases have no working voltage, Vb and B phases have working voltage, Vc and C phases have working voltage, C, Ia and a phases have no working current, Ib and B phases have working current, Ic and C phases have working current, D, Ta and a phases have working temperature signals, Tb and B phases have working temperature signals, Tc and C phases have working temperature signals, E and self-checking work is completed, and faults are as follows: and (4) lacking a phase and running in a phase-lacking mode.
6. A, inputting a control signal, B, a voltage signal, Va and a phases have working voltage, Vb and B phases have no working voltage, Vc and C phases have working voltage, C, Ia and a phases have working current, Ib and B phases have no working current, Ic and C phases have working current, D, Ta and a phases have working temperature signals, Tb and B phases have working temperature signals, Tc and C phases have working temperature signals, E and self-checking work is completed, and faults are as follows: and phase b is absent, and phase-deficient operation is performed.
7. A, inputting a control signal, B, a voltage signal, Va and a phases have working voltage, Vb and B phases have working voltage, Vc and C phases have no working voltage, C, Ia and a phases have working current, Ib and B phases have working current, Ic and C phases have no working current, D, Ta and a phases have working temperature signals, Tb and B phases have working temperature signals, Tc and C phases have working temperature signals, E and self-checking work is completed, and faults are as follows: and C phase loss and phase loss operation.
8. A, inputting a control signal, B, a voltage signal, Va and a phases have working voltages, Vb and B phases have working voltages, Vc and C phases have working voltages, C, Ia and a phases have abnormal working currents, Ib and B phases have working currents, Ic and C phases have working currents, D, Ta and a phases have abnormal working temperature signals, Tb and B phases have working temperature signals, Tc and C phases have working temperature signals, E and self-checking work is finished, and attention is paid to: the a phase is abnormal, and can work normally in an overcurrent and overheat state within 5 percent of the three-phase difference.
9. A, inputting a control signal, B, a voltage signal, Va and a phases have working voltages, Vb and B phases have working voltages, Vc and C phases have working voltages, C, Ia and a phases have working currents, Ib and B phases have working current abnormity, Ic and C phases have working currents, D, Ta and a phases have working temperature signals, Tb and B phases have working temperature abnormity signals, Tc and C phases have working temperature signals, E and self-checking work is finished, and attention is paid to: the b phase is abnormal, and can work normally in an overcurrent and overheat state within 5 percent of the three-phase difference.
10. A, inputting a control signal, B, a voltage signal, Va and a phases have working voltages, Vb and B phases have working voltages, Vc and C phases have working voltages, C, Ia and a phases have working currents, Ib and B phases have working currents, Ic and C phases have working current abnormity, D, Ta and a phases have working temperature signals, Tb and B phases have working temperature abnormity signals, Tc and C phases have working temperature abnormity signals, E and self-checking work is completed, and attention is paid to: the c phase is abnormal, and can work normally in an overcurrent and overheat state within 5 percent of the three-phase difference.
11. A, inputting a control signal, B, a voltage signal, Va and a phases have working voltages, Vb and B phases have working voltages, Vc and C phases have working voltages, C, Ia and a phases have working current abnormity, Ib and B phases have working current abnormity, Ic and C phases have working currents, D, Ta and a phases have working temperature abnormity signals, Tb and B phases have working temperature abnormity signals, Tc and C phases have working temperature signals, E and self-checking work is completed, and attention is paid to: a. the b phase is abnormal, and can work normally in an overcurrent and overheat state within 5 percent of the three-phase difference.
12. A, inputting a control signal, B, a voltage signal, Va and a phases have working voltages, Vb and B phases have working voltages, Vc and C phases have working voltages, C, Ia and a phases have working currents, Ib and B phases have working current abnormity, Ic and C phases have working current abnormity, D, Ta and a phases have working temperature signals, Tb and B phases have working temperature abnormity signals, Tc and C phases have working temperature abnormity signals, E and self-checking work is finished, and attention is paid to: b. the c phase is abnormal, and can work normally in an overcurrent and overheat state within 5 percent of the three-phase difference.
13. A, inputting a control signal, B, a voltage signal, Va and a phases have working voltages, Vb and B phases have working voltages, Vc and C phases have working voltages, C, Ia and a phases have abnormal working currents, Ib and B phases have working currents, Ic and C phases have abnormal working currents, D, Ta and a phases have abnormal working temperature signals, Tb and B phases have working temperature signals, Tc and C phases have abnormal working temperature signals, E and self-checking work is completed, and attention is paid to: a. the c phase is abnormal, and can work normally in an overcurrent and overheat state within 5 percent of the three-phase difference.
14. A, inputting a control signal, B, a voltage signal, Va and a phases have working voltages, Vb and B phases have working voltages, Vc and C phases have working voltages, C, Ia and a phases have working current abnormity, Ib and B phases have working current abnormity, Ic and C phases have working current abnormity, D, Ta and a phases have working temperature abnormity signals, Tb and B phases have working temperature abnormity signals, Tc and C phases have working temperature abnormity signals, E and self-checking work is finished, focusing on: a. and the phases b and c are abnormal, and the system can work normally when the overcurrent and overheat states are within 15% of the difference compared with a large data center. And pre-detection early warning is also sent out, and the fault maintenance requirement is met. And issues a fault code.
15. A, inputting a control signal, B, a voltage signal, Va and a phases have working voltage, Vb and B phases have working voltage, Vc and C phases have working voltage, C, Ia and a phases have working current which rises rapidly, Ib and B phases have working current, Ic and C phases have working current, D, Ta and a phases have working temperature signals, Tb and B phases have working temperature signals, Tc and C phases have working temperature signals, E and self-checking work is completed, and faults are as follows: and (3) if the phase a is abnormal, stopping the machine for maintenance immediately in an overcurrent (short circuit) state. And issues a fault code.
16. A, inputting a control signal, B, a voltage signal, Va and a phases have working voltage, Vb and B phases have working voltage, Vc and C phases have working voltage, C, Ia and a phases have working current, Ib and B phases have working current which rises rapidly, Ic and C phases have working current, D, Ta and a phases have working temperature signals, Tb and B phases have working temperature signals, Tc and C phases have working temperature signals, E and self-checking work is completed, and faults are as follows: and b, if the phase is abnormal, the machine is stopped to be overhauled immediately in an overcurrent (short circuit) state. And issues a fault code.
17. A, inputting a control signal, B, a voltage signal, Va and a phases have working voltage, Vb and B phases have working voltage, Vc and C phases have working voltage, C, Ia and a phases have working current, Ib and B phases have working current, Ic and C phases have working current which rapidly rises, D, Ta and a phases have working temperature signals, Tb and B phases have working temperature signals, Tc and C phases have working temperature signals, E and self-checking work is completed, and faults are as follows: and c, phase abnormality, overcurrent (short circuit) state, immediately stopping the machine for maintenance and sending a fault code.
18. A, inputting a control signal, B, a voltage signal, Va and a phases have working voltage, Vb and B phases have working voltage, Vc and C phases have working voltage, C, Ia and a phases have working current which rapidly rises, Ib and B phases have working current which rapidly rises, Ic and C phases have working current, D, Ta and a phases have working temperature signals, Tb and B phases have working temperature signals, Tc and C phases have working temperature signals, E and self-checking work is finished, and faults are as follows: a. and b, if the phase is abnormal, the machine is stopped to be overhauled immediately in an overcurrent (short circuit) state. And issues a fault code.
19. A, inputting a control signal, B, a voltage signal, Va and a phases have working voltage, Vb and B phases have working voltage, Vc and C phases have working voltage, C, Ia and a phases have working current, Ib and B phases have working current which rapidly rises, Ic and C phases have working current which rapidly rises, D, Ta and a phases have working temperature signals, Tb and B phases have working temperature signals, Tc and C phases have working temperature signals, E and self-checking work is completed, and faults are as follows: b. and c, if the phase is abnormal, the machine is stopped to be overhauled immediately in an overcurrent (short circuit) state. And issues a fault code.
20. A, inputting a control signal, B, a voltage signal, Va and a phases have working voltage, Vb and B phases have working voltage, Vc and C phases have working voltage, C, Ia and a phases have working current which rapidly rises, Ib and B phases have working current, Ic and C phases have working current which rapidly rises, D, Ta and a phases have working temperature signals, Tb and B phases have working temperature signals, Tc and C phases have working temperature signals, E and self-checking work is completed, and faults are as follows: a. and c, if the phase is abnormal, the machine is stopped to be overhauled immediately in an overcurrent (short circuit) state. And issues a fault code.
21. A, inputting a control signal, B, a voltage signal, Va and a phases have working voltage, Vb and B phases have working voltage, Vc and C phases have working voltage, C, Ia and a phases of working current rapidly rise, Ib and B phases of working current rapidly rise, Ic and C phases of working current rapidly rise, D, Ta and a phases have working temperature signals, Tb and B phases have working temperature signals, Tc and C phases have working temperature signals, E and self-checking work is completed, and faults are as follows: a. and (5) if the phases b and c are abnormal, stopping the machine for maintenance immediately when all three phases are in an overcurrent (short circuit) state, and sending a fault code.
The above described workflow can be clearly illustrated by the following table.
The working expression true value table of the three-phase alternating current embedded type composite sensor comprises the following steps:
description of the drawings:
1. serial number 2, starting self-checking, wherein the self-checking function comprises self-checking zero, self-calibration and self-calibration functions under the processing of the MCU;
2. firstly detecting the voltage values of each phase with the serial numbers of 3-7 under the static condition that the single chip microcomputer MCU does not work;
3. the overheating working states of serial numbers 8-10 and 11-13 are common and mainly caused by three-phase imbalance;
4. serial number 14 is typically the onset of device degradation or damage, causing excessive current. The method is easy to find out under big data comparison, and needs to find out reasons in time and replace the reasons in time;
5. serial numbers 15-17 are generally relative earth faults, which also include partial breakdown of the insulation, and the circuit breaker (earth leakage protector) will act. The numbers 18-21 are interphase short-circuit faults, although the probability of such faults occurring is relatively low. But is extremely destructive. The power must be momentarily turned off. But here the point of occurrence of the fault is differentiated before and after the device.
6. Some faults occurring in natural environment, such as lightning stroke, flood, fire and the like, cause direct power supply faults, are generally external environment, and are not in the processing category of the composite sensor;
7. under the normal working condition, the embedded composite sensor can normally output three dynamic signals of voltage, current and temperature to a big data center and feed back to a control center under the control of an input control signal.
8. When the power semiconductor device is detected to be out of order, the power semiconductor device is immediately turned off, and a device code plus fault code signal is output and clearly displayed on a man-machine conversation screen.
The working principle of the utility model is further explained as follows:
the utility model provides a pair of embedded compound sensor's principle, structure, circuit and control method, the individual that can have single embedded compound sensor possesses the data that unique code data, input working signal data collection, output working signal data collection, various collections such as operating condition signal data collection, through logic performance and AD conversion, exports data center and control center through IO interface feedback to confirm real-time operating condition and in time handle various trouble.
The utility model provides an embedded compound sensor's control method can also be through various communication protocol with wired or wireless method and big data center and control center butt joint embedded compound sensor acquisition output signal to obtain the data feedback of control center signal. The control center can be a PLC industrial control center or a PC computer data center. In these systems, embedded composite sensors interconnect power semiconductor devices (modules), machines, workpieces, and IT systems, extending the enterprise beyond a single professional machine. These linking systems can interact with other internet protocol based systems, analyze data, make predictions, and automatically configure to accommodate changes. In short, any equipment in the industrial internet can be controlled, instant working information can be obtained, and through big data management and comparison, the fault and the reason of one driving part in a certain device with problems can be quickly found out in thousands of devices, which is meaningful.
The utility model discloses an embedded compound sensor's principle, structure, circuit and control method can use the embedded compound sensor in many different grade type fields, improves and changes on intelligent solid state relay, power control device and intelligent power control module (IPM), and all improvements all belong to with the change the technical scheme in the scope, belong to the utility model discloses a protection scope.
Claims (9)
1. An embedded composite sensor, comprising: voltage, current and temperature sensors, an MCU (microprogrammed control unit) singlechip and a power semiconductor chip; one end of the voltage sensor, one end of the current sensor and one end of the temperature sensor are embedded into the power semiconductor chip, the other end of the voltage sensor, the voltage sensing probe and the current sensor are tightly attached to the input end of the power semiconductor chip, the current sensor is sleeved into the input end of the power semiconductor chip, and the temperature sensor is tightly attached to the power semiconductor chip; the voltage sensor, the current sensor, the temperature sensor and the MCU singlechip are compositely arranged on a mounting substrate, the mounting substrate is arranged on a power semiconductor chip, and the power semiconductor chip is arranged on a heat dissipation substrate of the power semiconductor chip; the temperature sensor obtains the working temperature of the power semiconductor chip, and the voltage and current sensors obtain dynamic and static working information;
the circuit comprises four parts of circuits of voltage sensing, current sensing, temperature sensing and an MCU singlechip, and the four parts of circuits are all compounded on the mounting substrate to form a complete complex; the voltage sensing, the current sensing and the temperature sensing synchronously output a voltage signal, a current signal and a temperature signal sensed from the power semiconductor chip to the MCU singlechip; the MCU singlechip analyzes and judges through a set program, internally sends out a work control instruction, and externally transmits information of instant working current, voltage and temperature;
the voltage sensing circuit part comprises a virtual capacitor (C1), a capacitor (C2) and a resistor (R1), wherein the virtual capacitor (C1) is tightly attached to the input end of the power semiconductor device through a voltage sensing probe, the capacitor (C2) and the resistor (R1) are quickly released by a G pin of a MOSFET (metal-oxide-semiconductor field effect transistor) Q1, dynamic voltage is quickly measured, the MOSFET Q1 is linearly amplified under the action of a power supply (VCC), and a voltage signal (V1) is output to the MCU singlechip (U1) at the resistor (R2);
the current sensing circuit part comprises a current sensor (L1), a resistor (R3) and a resistor (R4), wherein the annular current sensor (L1) is sleeved at the input end of the power semiconductor device, a phase ratio voltage is induced on the annular current sensor (L1) when working current passes through, voltage is divided through the resistor (R3) and the resistor (R4), a current signal (V2) is output to the MCU singlechip (U1), and an output (VP2) directly triggers the short-circuit protection circuit;
the temperature sensing circuit part directly approaches to the power semiconductor chip by using a temperature sensor (U2) and outputs a temperature signal (V3) to the MCU singlechip (U1);
the MCU singlechip (U1) performs composite operation processing on the signals according to a set program;
the MCU singlechip is provided with an external data communication interface, receives an external control signal and feeds back internal data to external equipment in a wired or wireless data transmission mode, so that a bidirectional communication function is realized.
2. An embedded composite sensor according to claim 1, comprising: the mounting substrate is a micro ceramic copper clad laminate (DBC).
3. An embedded composite sensor according to claim 1, comprising: the current sensor is a ring-shaped current sensor and has an overcurrent protection function.
4. An embedded composite sensor according to claim 1, comprising: the MCU singlechip reserves a signal input interface so as to input external information signals.
5. An embedded composite sensor according to claim 4, comprising: the external information signals include pressure, vibration, infrared temperature, and visual signals.
6. An embedded composite sensor according to claim 1, comprising: the composite operation processing comprises fault detection and temperature compensation.
7. An embedded composite sensor according to claim 1, comprising: the MCU singlechip can generate a unique code which is possessed by an individual so as to facilitate the location of fault maintenance.
8. An embedded composite sensor according to claim 1, comprising: the MCU singlechip has self-zeroing, self-calibration and self-correction functions inside.
9. An embedded composite sensor according to any one of claims 1-8, comprising: and a group of power supplies are used for supplying power and outputting output signals acquired by a plurality of composite working state ends.
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110118581A (en) * | 2019-06-05 | 2019-08-13 | 杨友林 | A kind of embedded combined type trans |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110118581A (en) * | 2019-06-05 | 2019-08-13 | 杨友林 | A kind of embedded combined type trans |
| CN110118581B (en) * | 2019-06-05 | 2024-01-09 | 上海一旻成锋电子科技有限公司 | Embedded composite sensor |
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Effective date of registration: 20200409 Address after: 201800 room 1311, building 2, No. 20, Jialuo Road, Baoshan District, Shanghai Patentee after: Shanghai Yizhang Chengfeng Electronic Technology Co., Ltd. Address before: 200940 room 154, 301 Yongqing village, Shanghai, Baoshan District, China Co-patentee before: Chen Qinhua Patentee before: Yang Youlin Co-patentee before: Luo Qili |