CN210072364U - Control structure and control system of semiconductor switch panel - Google Patents
Control structure and control system of semiconductor switch panel Download PDFInfo
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- CN210072364U CN210072364U CN201920795805.8U CN201920795805U CN210072364U CN 210072364 U CN210072364 U CN 210072364U CN 201920795805 U CN201920795805 U CN 201920795805U CN 210072364 U CN210072364 U CN 210072364U
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Abstract
A control structure and a control system of a semiconductor switch panel. The control structure of the semiconductor switch panel includes: the temperature sensor is used for being in contact with the semiconductor switch; a first pin of the microprocessor is connected with the temperature sensor, and a second pin of the microprocessor is used for being connected with a controlled end of the semiconductor switch; the wireless communication module is used for being in communication connection with a control application of the intelligent terminal; the temperature sensor comprises a thermistor and a voltage dividing resistor, and the thermistor is used for being in contact with the semiconductor switch, so that the temperature sensor is in contact with the semiconductor switch. The control structure can protect the semiconductor switch and the semiconductor switch panel.
Description
Technical Field
The utility model relates to an intelligence house field especially relates to a semiconductor switch panel's control structure and control system.
Background
There are many switch panels on the market today that are based on semiconductor switch designs. Because semiconductor switches have a characteristic of being easily heated, none of these semiconductor switch panels can be applied to a high power load.
However, most users often do not pay attention to or remember the applicable range of the load identified on the semiconductor switch panel purchased by the user, which causes the semiconductor switch panel to be used when the load power exceeds the applicable range of the switch panel, thereby affecting the service life of the semiconductor switch panel, even damaging the circuit, causing electrical dangerous situations, and the like.
For more control circuits related to the existing switch, reference may be made to chinese patent publication No. CN 205485541U.
SUMMERY OF THE UTILITY MODEL
The utility model provides a problem provide a semiconductor switch panel's control structure and control system to prevent that semiconductor switch panel from using and surpassing the circumstances such as permissible range at load power, ensure semiconductor switch panel's normal life, prevent the circumstances such as damage circuit and electrical danger.
In order to solve the above problem, the utility model provides a control structure of semiconductor switch panel, include: the temperature sensor is used for being in contact with the semiconductor switch; a first pin of the microprocessor is connected with the temperature sensor, and a second pin of the microprocessor is used for being connected with a controlled end of the semiconductor switch; the wireless communication module is used for being in communication connection with a control application of the intelligent terminal; the temperature sensor comprises a thermistor and a voltage dividing resistor, and the thermistor is used for being in contact with the semiconductor switch, so that the temperature sensor is in contact with the semiconductor switch.
Optionally, the control structure further includes a filter resistor and a filter capacitor, the filter resistor is connected between the thermistor and an analog-to-digital conversion pin of the microprocessor, one end of the filter capacitor is connected to the analog-to-digital conversion pin, and the other end of the filter capacitor is grounded.
Optionally, the semiconductor switch is a triode switch, an MOS transistor switch, or a thyristor switch.
Optionally, the semiconductor switch is a single-way switch or a multi-way switch; when the semiconductor switch is a multi-way switch, each way of switch is closely attached to one thermistor.
Optionally, the control structure further comprises a voltage dependent resistor, and the voltage dependent resistor is connected in parallel with the semiconductor switch.
Optionally, the control structure further comprises a fuse, and the fuse is connected in series to the live wire.
In order to solve the above problem, the utility model also provides a semiconductor switch panel's control system, include as above semiconductor switch panel's control structure to including semiconductor switch panel, semiconductor switch panel has semiconductor switch, thermistor with the semiconductor switch contact is in the same place, semiconductor switch connects between live wire and zero line, semiconductor switch and load series connection.
Optionally, the control system for the semiconductor switch panel described above is applied, and the control method includes: the wireless communication module is in communication connection with the control application of the intelligent terminal; the microprocessor receives instruction information through the wireless communication module; after the semiconductor switch is switched on, calibrating a control structure of the semiconductor switch panel; after said calibration, said microprocessor of the control structure of the semiconductor switch panel reads the parameters of said temperature sensor to acquire the initial temperature and the real-time temperature of the semiconductor switch under said load and to record the temperature variations; calculating the power of the load according to the initial temperature and the real-time temperature of the semiconductor switch.
Optionally, a temperature variation curve of the semiconductor switch is obtained according to the temperature variation, and whether the power of the load is within the applicable power range of the semiconductor switch panel is judged according to the temperature variation curve; and the power of the load exceeds the applicable power range of the semiconductor switch panel, and the control application of the intelligent terminal prompts a user to power off in time and replace the proper load.
Optionally, setting a first temperature threshold and a second temperature threshold; when the acquired real-time temperature exceeds the first temperature threshold, sending a prompt to the control application of the intelligent terminal through the wireless communication module so as to prompt a user to power off in time and adjust the load power; and when the acquired real-time temperature exceeds the second temperature threshold, the microprocessor controls the semiconductor switch to be switched off and gives an alarm.
Optionally, after the initial temperature and the real-time temperature are processed by the microprocessor, the value is transmitted to the control application of the intelligent terminal; or directly transmitting the acquired initial temperature and the acquired real-time temperature to the control application of the intelligent terminal, and processing the initial temperature and the real-time temperature by the control application.
The utility model discloses in one of them aspect of technical scheme, utilize corresponding control structure, can prevent that semiconductor switch panel from using to surpass the circumstances such as permissible range and taking place at load power, in case semiconductor switch panel uses when load power surpasss corresponding range, will send immediately and remind or cut off the power supply to the user to protection semiconductor switch protects semiconductor switch panel, ensures semiconductor switch panel's normal life, prevents to appear the circumstances such as damage circuit and electrical dangerous situation.
Drawings
FIG. 1 is a schematic block diagram of a control system of a semiconductor switch panel in an embodiment;
FIG. 2 is a circuit diagram of a control system of the semiconductor switch panel in the embodiment;
fig. 3 is a flowchart of an application scenario of the control method of the semiconductor switch panel in the embodiment.
Detailed Description
The existing semiconductor switch panel is easy to be damaged due to overlarge corresponding load, so that the switch panel is easy to be damaged, and even other electrical dangers occur.
Therefore, the utility model provides a new semiconductor switch panel's control structure and control system to solve the not enough of above-mentioned existence.
For a clearer illustration, the present invention will be described in detail with reference to the accompanying drawings.
An embodiment of the present invention provides a control system of a semiconductor switch panel, please refer to fig. 1 and fig. 2 in combination, fig. 1 is a schematic block diagram of the control system, and fig. 2 is a circuit diagram of the control system.
As shown in fig. 1 and 2, the control system of the semiconductor switch panel includes a semiconductor switch panel (not labeled) having a semiconductor switch 200, the semiconductor switch 200 being connected between a live line (L) and a neutral line (N), the semiconductor switch 200 being connected in series with a load 300. The load 300 may be a light, a curtain, a fan, a sound, etc., and may be one or more.
As shown in fig. 1 and 2, the control system of the semiconductor switch panel further includes a control structure (not labeled) of the semiconductor switch panel.
The control structure of the semiconductor switch panel includes a temperature sensor 110, a microprocessor 120, and a wireless communication module 130.
In this embodiment, the temperature sensor 110 is used to contact with a corresponding semiconductor switch (in this embodiment, the semiconductor switch 200).
In this embodiment, a first pin of the microprocessor 120 is connected to the temperature sensor 110, and a second pin of the microprocessor 120 is used for connecting to a controlled terminal (not labeled) of the semiconductor switch 200, which can be referred to in conjunction with fig. 1 and fig. 2. In the embodiment, as shown in fig. 2, the semiconductor switch 200 is a thyristor switch Q1 (or a thyristor switch), and the controlled terminal is the G pole thereof, i.e., the G pole is connected to the second pin of the microprocessor 120, which will be further described later.
In other embodiments, the semiconductor switch may be a triode switch or a MOS transistor switch.
In this embodiment, the wireless communication module 130 is configured to be in communication connection with a control application of the smart terminal, and the content of this part may refer to the content of the subsequent method part.
It should be noted that, in this embodiment, fig. 2 shows that the wireless communication module 130 in fig. 1 is integrated in the microprocessor 120, and thus is not shown in fig. 2. That is, in fig. 2, the wireless communication module is a part (one functional module) of the microprocessor chip 120. When the wireless communication module is integrated in a microprocessor as shown in fig. 2, the microprocessor may use a single chip with model number RTL8762 CMF-CG.
However, in other embodiments, the wireless communication module may be a separate module. When wireless communication module can be solitary module (chip), microprocessor can adopt the model to be STM32F103ZET 6D's singlechip chip, and wireless communication module is connected with microprocessor's communication pin this moment.
In addition, fig. 2 also shows that the circuit has an antenna structure ANT1, and the antenna structure ANT1 is used for connecting a corresponding wireless communication module, so that the wireless communication module can perform corresponding wireless communication.
In order to cooperate with the antenna structure ANT1, in this embodiment, an inductor L1, a capacitor C2, and a capacitor C3 are further disposed at the periphery of the microprocessor, and as shown in fig. 2, they are disposed to match with the RF antenna of the antenna structure ANT1, so as to adjust the impedance of the antenna circuit, for example, the impedance of the antenna circuit may be adjusted to about 50 Ω.
As shown in fig. 2, in the present embodiment, the temperature sensor 200 in fig. 1 includes a thermistor RV1 and a voltage dividing resistor R2. Further, as described above, the semiconductor switch 200 in fig. 1 specifically employs the thyristor switch Q1. The thermistor RV1 is used to contact the thyristor switch Q1 (semiconductor switch) together, thereby realizing the contact of the temperature sensor 110 and the semiconductor switch 200 together. A bias resistor R3 is also connected in series between the T1 pole (shown as 1 in fig. 2) and the G pole (shown as 3 in fig. 2) of the thyristor switch Q1, and the resistance of the bias resistor R3 may be about 1K Ω.
In order to bring the thermistor RV1 into contact with the thyristor switch Q1 (semiconductor switch), a specific contact manner may be close contact, for example, by adhesion. Under the condition of not influencing the semiconductor switch, the two structures can be tightly contacted and fixed together by adopting a magnetic attraction mode or other fixing modes.
With reference to fig. 2, the control structure of the semiconductor switch panel further includes a filter resistor R1 and a filter capacitor C1, the filter resistor R1 is connected between the thermistor RV1 and an analog-to-digital conversion pin of the microprocessor, one end of the filter capacitor C1 is connected to the analog-to-digital conversion pin (ADC), and the other end of the filter capacitor C1 is grounded. The microprocessor 120 of the present embodiment can obtain more accurate data through the filter resistor R1 and the filter capacitor C1, but in other embodiments, the filter resistor R1 may be omitted.
It should be noted that fig. 2 shows that the semiconductor switch is a single-way switch, and in other embodiments, the semiconductor switch may also be a multi-way switch, that is, a plurality of switches are included. When the semiconductor switches are multi-way switches, each way switch is closely attached to a thermistor, namely each way switch can be contacted with a temperature sensor, so that the temperature of each way switch load is obtained respectively.
As shown in fig. 2, the control structure of the semiconductor switch panel of the present embodiment further includes a varistor RZ1, and the varistor RZ1 is connected in parallel with the semiconductor switch 200 (thyristor switch Q1). The voltage dependent resistor RZ1 can protect the chip such as microprocessor and other circuits, and prevent them from being damaged by electrostatic discharge, surge and other transient current (such as lightning strike).
As shown in fig. 2, the control structure of the semiconductor switch panel of the present embodiment further includes a fuse F1, the fuse F1 is connected in series to the live line, and the fuse F1 makes the whole circuit structure safer.
The control system of the semiconductor switch panel provided by the embodiment has the corresponding control structure of the semiconductor switch panel, and can find whether the load in the circuit is suitable for the load application range of the corresponding semiconductor switch panel or not in time through corresponding detection and control actions, so that the semiconductor switch panel is prevented from being used when the load power exceeds the allowable range (such as a rated range) and the like, the normal service life of the semiconductor switch panel is ensured, and the situations of circuit damage, electrical danger and the like are prevented.
The embodiment of the utility model provides a still provide a semiconductor switch panel's control method.
The control method is applied to the control system of the semiconductor switch panel provided in the foregoing embodiment, and is applied to the control system of the foregoing embodiment, so that the corresponding temperature sensor is in contact with (in close contact with) the semiconductor switch. Usually, the semiconductor switch is connected in series with the load and then connected to the commercial power, and in the corresponding structure of the corresponding system, the microprocessor is used for receiving the instruction information of the user, controlling the operation of the semiconductor switch panel, reading and analyzing the parameters of each temperature sensor and the like. The temperature sensor is used for measuring the working temperature of the semiconductor switch. The wireless communication module is used for mutual communication between the main control chip and the intelligent terminal.
The control method comprises the following steps:
the wireless communication module is in communication connection with the control application of the intelligent terminal;
the microprocessor receives instruction information through the wireless communication module;
after the semiconductor switch is switched on, calibrating a control structure of the semiconductor switch panel;
after calibration, the microprocessor of the control structure of the semiconductor switch panel reads the parameters of the temperature sensor to acquire the initial temperature and the real-time temperature of the semiconductor switch under load and records the temperature change;
and calculating the power of the load according to the initial temperature and the real-time temperature of the semiconductor switch.
The above-mentioned method process shows that when the user uses the switch panel to turn on the circuit (i.e. the load starts to work), the microprocessor chip can start to read the parameters of the temperature sensor attached to the semiconductor switch. That is, when a user turns on a load on a certain line by using the switch panel, the microprocessor chip can read parameters of the corresponding temperature sensor and start to collect the temperature of the semiconductor switch on the working line. The power of the load connected with the switch panel can be calculated through the collected temperature data, and whether the accessed load meets the power requirement of the switch panel or not is judged according to the calculation result. In another case, the judgment result can be pushed to the bound control Application (APP) directly by judging whether the collected operating temperature of the semiconductor switch exceeds a set temperature threshold.
In this embodiment, in order to reduce power consumption of the system and the configuration as much as possible, the system is usually in a sleep state to save power. Further, a microprocessor or the like may be set to deep sleep most of the time. And only when a user sends a corresponding control instruction through an intelligent terminal (such as a smart phone), or only when the switch panel is triggered, the switch panel is powered on (closed power on), devices such as a microprocessor and the like can be awakened, and corresponding actions are executed. As mentioned above, once the microprocessor chip receives the control command, it starts to read the parameters of the temperature sensor attached to the semiconductor switch, calculates the load power of the circuit through the collected temperature data, and judges whether the load power exceeds the applicable range, or directly judges whether the collected working temperature of the semiconductor switch exceeds the set temperature threshold.
In the present embodiment, the reason for performing the above calibration is that the degree of coupling (contact) between the temperature sensor and the semiconductor switch affects the accuracy of the system in determining the magnitude of the load connected. During calibration, the system measures the ambient temperature in advance and records the temperature value. Then, a fixed and known load is connected to the system, the system works for a certain time, and the temperature at the moment is measured again by the system. When the temperature measured by the system is in a preset range, the temperature sensor is well coupled with the semiconductor switch; conversely, when the temperature measured by the system is low, indicating that the temperature sensor is weakly coupled to the semiconductor switch, the corresponding contact structure may be adjusted and then recalibrated.
In the calibration process, after a relatively accurate value is obtained, the value can be used as a reference for subsequent actual work of the system, so that the value is balanced with actual temperature change, and more accurate accuracy is obtained (factors such as the coupling degree of the ambient temperature and the temperature sensor with the semiconductor switch and the like are avoided, and influence on a measurement result is avoided). At this time, the subsequent steps of the method, namely, the corresponding temperature of the semiconductor switch is measured, so that the size of the connected load can be truly and accurately reflected.
In the case of performing the above calibration, the power of the load connected to the corresponding circuit may be calculated based on the initial temperature and the temperature change of the semiconductor switch, and in combination with the ambient temperature (in this case, the ambient temperature is used twice).
In this embodiment, the instruction information that the microprocessor can receive includes the control instruction transmitted by the wireless communication module and the switch control feedback information directly through the semiconductor switch panel.
In this embodiment, the method may further include obtaining a temperature change curve of the semiconductor switch according to the temperature change, and determining whether the power of the load is within the applicable power range of the semiconductor switch panel according to the temperature change curve; the power of the load exceeds the applicable power range of the semiconductor switch panel, and the intelligent terminal prompts a user to power off in time and replace the appropriate load through control application of the intelligent terminal.
In the embodiment, in order to prevent the semiconductor switch from being out of control due to overhigh temperature, a first temperature threshold and a second temperature threshold are set; when the acquired real-time temperature exceeds a first temperature threshold value, sending a prompt to a control Application (APP) of the intelligent terminal through the wireless communication module so as to prompt a user to power off in time and adjust the load power (change a proper load); when the acquired real-time temperature exceeds a second temperature threshold, the microprocessor controls the semiconductor switch to be switched off (forced power off) and gives an alarm. At this moment, when the operating temperature of semiconductor switch surpassed first grade temperature threshold (first temperature threshold), the user did not cut off the power supply immediately according to the warning information of APP propelling movement, then when the operating temperature of semiconductor switch rose to more than next grade temperature threshold (second temperature threshold), the system can automatic control semiconductor switch outage to alarm.
It should be noted that, in other embodiments, the method may preset multiple temperature thresholds, and each temperature threshold may have a different function. For example, different temperature curves are set in advance according to different power loads and heating values of different semiconductor switches so as to predict different conditions, and meanwhile, different protection thresholds of different path switches are set.
In this embodiment, after initial temperature and real-time temperature can be handled through microprocessor, give intelligent terminal's control application with numerical value transmission again, also can directly give intelligent terminal's control application with initial temperature and real-time temperature transmission of gathering, control application handles initial temperature and real-time temperature. After the control application processes, the analysis calculation result can be further updated and displayed on the interface.
Referring to fig. 3, a specific scenario process of the control method is shown:
step S1, judging whether the microprocessor receives a corresponding control instruction; if not, the whole system goes to sleep (deep sleep) to save power consumption, i.e., step S6 is entered; if it is, instead, the system starts, i.e., proceeds to step S2, where temperature sensor data is collected and analyzed.
After the step S2, the process proceeds to a step S3, in which it is determined whether the corresponding load power (or the corresponding temperature) exceeds the applicable range (threshold) of the semiconductor switch panel; if the corresponding threshold value is exceeded, the step S5 is entered, that is, the microprocessor sends a prompt to a control Application (APP) of the intelligent terminal, so that the APP prompts the user to replace the appropriate load; if the corresponding threshold is not exceeded, the process proceeds to step S4, that is, the corresponding data is updated to update the relevant information of the APP, and further proceeds to step S6, the whole system goes to sleep (deep sleep) to save power consumption.
It should be noted that, after step S5, fig. 3, although not further shown, may further include determining whether the user should replace the appropriate load according to the prompt; re-entering step S1, or directly entering step S6, if it is determined that the user has replaced the appropriate load; if it is determined that the user does not replace the proper load, the method may proceed to step S2, further collect and analyze data from the temperature sensor, directly control the semiconductor switch to be turned off when the temperature of the semiconductor switch rises to another threshold, and then proceed to step S6.
Although the present invention is disclosed above, the present invention is not limited thereto. Various changes and modifications may be effected therein by one of ordinary skill in the pertinent art without departing from the scope or spirit of the present invention, and the scope of the present invention is defined by the appended claims.
Claims (6)
1. A control structure of a semiconductor switch panel, comprising:
the temperature sensor is used for being in contact with the semiconductor switch;
a first pin of the microprocessor is connected with the temperature sensor, and a second pin of the microprocessor is used for being connected with a controlled end of the semiconductor switch;
the wireless communication module is used for being in communication connection with a control application of the intelligent terminal;
the temperature sensor comprises a thermistor and a voltage dividing resistor, and the thermistor is used for being in contact with the semiconductor switch, so that the temperature sensor is in contact with the semiconductor switch.
2. The control structure of a semiconductor switch panel according to claim 1, further comprising a filter resistor and a filter capacitor, wherein the filter resistor is connected between the thermistor and an analog-to-digital conversion pin of the microprocessor, and one end of the filter capacitor is connected to the analog-to-digital conversion pin and the other end thereof is grounded.
3. The control structure of a semiconductor switch panel according to claim 2, wherein the semiconductor switch is a triode switch, a MOS transistor switch, or a thyristor switch.
4. The control structure of a semiconductor switch panel according to claim 3, wherein the semiconductor switch is a one-way switch or a multi-way switch; when the semiconductor switch is a multi-way switch, each way of switch is closely attached to one thermistor.
5. The control structure of the semiconductor switch panel according to claim 4, wherein: the voltage-dependent resistor is connected with the semiconductor switch in parallel; the fuse is connected in series on a live wire.
6. A control system of a semiconductor switch panel comprising the control structure of the semiconductor switch panel according to any one of claims 1 to 5, and a semiconductor switch panel having a semiconductor switch connected between a live line and a neutral line, the semiconductor switch being connected in series with a load, the thermistor being in contact with the semiconductor switch.
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| Application Number | Priority Date | Filing Date | Title |
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| CN201920795805.8U CN210072364U (en) | 2019-05-29 | 2019-05-29 | Control structure and control system of semiconductor switch panel |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201920795805.8U CN210072364U (en) | 2019-05-29 | 2019-05-29 | Control structure and control system of semiconductor switch panel |
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| CN210072364U true CN210072364U (en) | 2020-02-14 |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110209083A (en) * | 2019-05-29 | 2019-09-06 | 厦门盈趣科技股份有限公司 | Control structure, control system and the control method of semiconductor switch panel |
| CN110209083B (en) * | 2019-05-29 | 2024-07-02 | 厦门盈趣科技股份有限公司 | Control structure, control system and control method of semiconductor switch panel |
-
2019
- 2019-05-29 CN CN201920795805.8U patent/CN210072364U/en not_active Withdrawn - After Issue
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110209083A (en) * | 2019-05-29 | 2019-09-06 | 厦门盈趣科技股份有限公司 | Control structure, control system and the control method of semiconductor switch panel |
| CN110209083B (en) * | 2019-05-29 | 2024-07-02 | 厦门盈趣科技股份有限公司 | Control structure, control system and control method of semiconductor switch panel |
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