CN210006735U - Mosfet semiconductor device with internal integrated temperature protection device - Google Patents

Mosfet semiconductor device with internal integrated temperature protection device Download PDF

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Publication number
CN210006735U
CN210006735U CN201920172226.8U CN201920172226U CN210006735U CN 210006735 U CN210006735 U CN 210006735U CN 201920172226 U CN201920172226 U CN 201920172226U CN 210006735 U CN210006735 U CN 210006735U
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China
Prior art keywords
temperature protection
mosfet
protection device
conductive pad
semiconductor device
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CN201920172226.8U
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Chinese (zh)
Inventor
梁德新
向啟平
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Zhong Bang Electronics Co Ltd Of Huizhou City
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Zhong Bang Electronics Co Ltd Of Huizhou City
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Priority to CN201920172226.8U priority Critical patent/CN210006735U/en
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/02—Bonding areas; Manufacturing methods related thereto
    • H01L2224/04—Structure, shape, material or disposition of the bonding areas prior to the connecting process
    • H01L2224/06—Structure, shape, material or disposition of the bonding areas prior to the connecting process of a plurality of bonding areas
    • H01L2224/0601—Structure
    • H01L2224/0603—Bonding areas having different sizes, e.g. different heights or widths
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/48—Structure, shape, material or disposition of the wire connectors after the connecting process of an individual wire connector
    • H01L2224/481—Disposition
    • H01L2224/48151—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive
    • H01L2224/48221—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked
    • H01L2224/48245—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic
    • H01L2224/48247—Connecting between a semiconductor or solid-state body and an item not being a semiconductor or solid-state body, e.g. chip-to-substrate, chip-to-passive the body and the item being stacked the item being metallic connecting the wire to a bond pad of the item
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4911—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain
    • H01L2224/49113—Disposition the connectors being bonded to at least one common bonding area, e.g. daisy chain the connectors connecting different bonding areas on the semiconductor or solid-state body to a common bonding area outside the body, e.g. converging wires
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/42—Wire connectors; Manufacturing methods related thereto
    • H01L2224/47—Structure, shape, material or disposition of the wire connectors after the connecting process
    • H01L2224/49—Structure, shape, material or disposition of the wire connectors after the connecting process of a plurality of wire connectors
    • H01L2224/491—Disposition
    • H01L2224/4912—Layout
    • H01L2224/49175—Parallel arrangements

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  • Semiconductor Integrated Circuits (AREA)

Abstract

The utility model relates to a integrated temperature protection device's Mosfet semiconductor device, with temperature protection device integrated to inside the Mosfet semiconductor device, realize the temperature variation of the perception Mosfet semiconductor device of maximum sensitivity, effectively keep apart between temperature protection device and the Mosfet two, do not produce the leakage path.

Description

Mosfet semiconductor device with internal integrated temperature protection device
Technical Field
The invention relates to the technical field of Mosfet semiconductor devices, in particular to Mosfet devices with internal integrated temperature protection devices.
Background
With the development of electronic products, consumer electronic products are increasingly miniaturized. With the product being made small and thin, the heat generated and accumulated in the work process of the Mosfet semiconductor device in the circuit can affect the service life and reliability of the electronic product, and in the prior art, the method for solving the technical problem mainly has two points: 1. the heat productivity is reduced by improving the IC process capability to reduce the voltage; 2. a thermistor is adopted in the circuit to detect and protect the temperature of the Mosfet semiconductor device. However, in the actual working process, because the Mosfet semiconductor device and the thermistor are generally designed at different positions of the circuit in the circuit design, the sensitivity of the thermistor for sensing the temperature change of the Mosfet semiconductor device is reduced along with the increase of the distance, and the temperature of the Mosfet semiconductor device exceeds the normal range and the thermistor is not sensed, so that reasonable protection cannot be performed. The problem of temperature protection of the Mosfet semiconductor device is not solved, so that the reliability of the product is affected due to overheating of the electronic product, the service life of the product is seriously shortened, and even the product is damaged.
Disclosure of Invention
The invention aims to provide Mosfet semiconductor devices with internal integrated temperature protection devices, wherein the temperature protection devices are integrated into the Mosfet semiconductor devices, so that the temperature change of a Mosfet chip can be sensed with highest sensitivity.
In order to achieve the purpose, the invention adopts the technical scheme that: including frame body district, carrier base island district, electrically conductive basal disc, Mosfet chip and temperature protection device, frame body district and carrier base island district range upon range of setting, electrically conductive basal disc, Mosfet chip and temperature protection device all encapsulate in carrier base island district, and Mosfet chip upper surface is equipped with source electrode and grid, and the lower surface is equipped with the drain electrode, and electrically conductive basal disc comprises radiating area and basal disc pin district. The heat dissipation area is located under the Mosfet chip and the temperature protection device, the heat dissipation area is electrically connected with the lower surface of the Mosfet chip through a conductive solder layer, the heat dissipation area is electrically connected with the lower surface of the temperature protection device through the conductive solder layer, and the Mosfet chip and the temperature protection device are isolated, insulated from each other and free of electrical connection.
The semiconductor chip further comprises an th conductive bonding pad and a second conductive bonding pad, the th conductive bonding pad and the second conductive bonding pad are located on the other side of the Mosfet chip, the th conductive bonding pad and the second conductive bonding pad both comprise a bonding area and a pin area, the bonding area is packaged in the chip-carrying base island area, the pin area extends outwards from the chip-carrying base island area to form a pin, the Mosfet chip is electrically connected with the bonding area of the th conductive bonding pad, and the temperature protection device is electrically connected with the bonding area of the second conductive bonding pad.
Preferably, the Mosfet chip is disposed between the bonding pad and the temperature protection device.
And , the source electrode and the gate electrode of the Mosfet chip are bridged between the welding areas of the th conductive welding pad through a plurality of metal wires or metal conductor strips, and the temperature protection device is bridged between the welding areas of the second conductive welding pad through a plurality of metal wires.
, the lead region of the th conductive pad is composed of a gate lead, a drain lead and a source lead.
Further , the lead area of the second conductive pad is comprised of two leads.
Preferably, the temperature protection device is a thermistor, the thermistor is integrated into the Mosfet semiconductor device, the positive terminal and the negative terminal of the thermistor are respectively and electrically connected with the two pins of the pin area of the second conductive pad, and the two pins of the pin area of the second conductive pad are insulated from each other. The thermistor feeds back the temperature change of the Mosfet chip to the circuit in a resistance value mode.
The improvement of the invention is , the conductive substrate disc is composed of a laminated substrate and an insulating plate, the insulating plate is arranged on the substrate, the Mosfet chip is arranged on the insulating plate, the driving and protecting circuit board is arranged on the substrate, and the driving and protecting circuit board is electrically connected with the Mosfet chip, the substrate is an all-copper substrate, the insulating plate is an alumina ceramic plate, the all-copper substrate is used as a current channel and a heat dissipation substrate, and the alumina ceramic plate provides layers of insulating low-heat-resistance transition channels between the Mosfet chip and the all-copper substrate and provides low-resistance conductive channels.
The kinds of Mosfet semiconductor devices with the internal integrated temperature protection device provided by the invention have the following beneficial technical effects and advantages:
1. the Mosfet chip and the thermistor can be packaged in semiconductor packages simultaneously to reduce the number of circuit elements, which is beneficial to the miniaturization of electronic products;
2. the thermistor is closest to the Mosfet chip and is located in the heat dissipation area in application of the Mosfet semiconductor device, temperature change of the Mosfet chip is sensed with the highest sensitivity, and therefore the sensitivity of the thermistor is effectively improved.
Drawings
The figures illustrate the present invention further , but the embodiments in the figures are not meant to be limiting in any way.
Fig. 1 is a schematic structural diagram of a Mosfet semiconductor device with an integrated temperature protection device inside according to an embodiment of the present invention.
Fig. 2 is a schematic diagram of an internal package structure of a Mosfet semiconductor device with an internal integrated temperature protection device according to an embodiment of the present invention.
Fig. 3 is a circuit diagram of a thermistor and a Mosfet chip in the prior art.
Fig. 4 is a comparison graph of Mosfet semiconductor devices with internal integrated temperature protection devices according to an embodiment of the present invention and thermistor resistance value-Mosfet chip temperature tests according to the prior art.
Detailed Description
It should be understood that the specific embodiments described herein are merely illustrative of the invention and are not intended to limit the invention.
As shown in FIG. 1, kinds of Mosfet semiconductor devices with internal integrated temperature protection devices comprise a frame body region 1, a chip-carrying base island region 2 and a pin region 3, wherein the frame body region 1 is connected with the chip-carrying base island region 2, the pin region 3 extends from the inside of the chip-carrying base island region 2 to form a pin, the pin region 3 comprises five pins, three of the pin 31, the pin 32 and the pin 33 are pins of a Mosfet chip 5, two of the pin 34 and the pin 35 are pins of a thermistor 6, and the pin 31, the pin 32 and the pin 33 of the Mosfet chip 5 are electrically connected with electrodes of a source electrode, a drain electrode and a grid electrode respectively.
The conductive base plate 4, the Mosfet chip 5 and the thermistor 6 are packaged in the chip-carrying base island region 2, the chip-carrying base island region 2 is a platform for adhering and loading the conductive base plate, and the pin region 3 is an electric connection path for connecting the Mosfet chip 5 and the thermistor 6 to the outside of the package. The carrier base island 2 may be internally packaged using TO-220 packaging technology.
As shown in fig. 2, the package structure inside the chip-on-chip base island region 2 includes a Mosfet chip 5 and a thermistor 6, the upper surface of the Mosfet chip 5 is provided with a source 52 and a gate 53, the lower surface is provided with a drain 51, the package structure further includes a conductive base plate 4, a second conductive pad 7 and a second conductive pad 8, the lower surface of the Mosfet chip 5 is electrically connected to the conductive base plate 4 through a conductive solder layer, the surface of the thermistor 6 is electrically connected to the conductive base plate 4 through a conductive solder layer, the Mosfet chip 5 and the thermistor 6 are isolated from each other, and are electrically connected to each other.
As shown in fig. 3, in the prior art, a thermistor 6a capable of sensing the operating temperature of the Mosfet chip 5a is connected in series to the gate of the Mosfet chip 5a, the circuit is widely applied to the rectifying circuit of the DC/DC PWM converter outputting a large current, and the thermistor 6a can be regarded as the gate trigger of the Mosfet chip 5a, the operating temperature of the Mosfet chip 5a is sensed by the thermistor 6a connected in series to the gate of the Mosfet chip 5a, and the temperature change of the Mosfet chip 5a is detected to compensate the parameter drift caused by the temperature change of the Mosfet chip 5a, when the temperature of the Mosfet chip 5a rises, the resistance of the thermistor 6a drops to raise the input voltage of the Mosfet chip 5a, so that the time for the on-off edge of the Mosfet chip 5a to switch is reduced, so that the heat generation amount of the Mosfet chip 5a is reduced, the problem of the parameter drift of the Mosfet chip 5a is improved, but the heat sensitivity of the thermistor 6a on the operating circuit 356 a in the prior art is more distant from the thermistor 5a, so that the thermistor 5a is likely to sense the temperature change.
As shown in fig. 4, Mosfet semiconductor devices with internal integrated temperature protection devices according to this embodiment are applied to the circuit shown in fig. 3, compared with the prior art, the changes of the resistance of the thermistor 6 corresponding to the temperature of the Mosfet chip 5 and the resistance of the thermistor 6a corresponding to the temperature of the Mosfet chip 5a during the test operation are respectively detected, in the prior art, the change of the resistance of the thermistor 6a is slow along with the change of the temperature of the Mosfet chip 5a, whereas the sensitivity of the thermistor 6 sensing the temperature change of the Mosfet chip 5 is the highest, and the resistance of the thermistor 6 can change along with the temperature change of the Mosfet chip 5 at any time, so as to improve the accuracy.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present invention, and the description thereof is more specific and detailed, but not construed as limiting the scope of the invention. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the inventive concept, which falls within the scope of the present invention. Therefore, the protection scope of the present patent shall be subject to the appended claims.

Claims (8)

  1. The utility model provides a kinds of Mosfet semiconductor device with internal integration temperature protection device, including this district of frame, slide base island district, electrically conductive basal disc, Mosfet chip and temperature protection device, this district of frame and slide base island district range upon range of setting, electrically conductive basal disc, Mosfet chip and temperature protection device all encapsulate in the slide base island is distinguished, Mosfet chip upper surface is equipped with source electrode and grid, and the lower surface is equipped with the drain electrode, electrically conductive basal disc comprises radiating area and basal disc pin district, its characterized in that:
    the heat dissipation area is positioned right below the MOSFET chip and the temperature protection device, the heat dissipation area is electrically connected with the lower surface of the MOSFET chip through a conductive solder layer, the heat dissipation area is electrically connected with the lower surface of the temperature protection device through a conductive solder layer, and the MOSFET chip and the temperature protection device are isolated, insulated and electrically connected;
    still include electrically conductive pad and the electrically conductive pad of second, electrically conductive pad, the electrically conductive pad of second are located the Mosfet chip and incline in addition , and electrically conductive pad and the electrically conductive pad of second all include the bonding pad and pin district, the bonding pad encapsulation is in carrier piece base island district, the pin district is followed the inboard outside extension in carrier piece base island district forms the pin, Mosfet chip electric connection the bonding pad of electrically conductive pad, temperature protection device electric connection the bonding pad of second electrically conductive pad.
  2. 2. The Mosfet semiconductor device with integrated temperature protection device, as recited in claim 1, wherein the Mosfet die is disposed between the temperature protection device and a bonding pad.
  3. 3. The kind of Mosfet semiconductor device with internal integrated temperature protection device as claimed in claim 2, wherein the drain, source and gate of the Mosfet die are connected across the bonding pads of the th conductive pad by a plurality of metal wires, and the temperature protection device is connected across the bonding pads of the second conductive pad by a plurality of metal wires.
  4. 4. The Mosfet semiconductor device with integrated temperature protection device as set forth in claim 2, wherein the drain, source and gate of the Mosfet chip are connected across the bond pad to the th conductive pad by metal conductor strips.
  5. 5. The kind of Mosfet semiconductor device with internal integrated temperature protection device as claimed in claim 2, wherein the th conductive pad has a lead region consisting of gate lead, drain lead and source lead.
  6. 6. A Mosfet semiconductor device with an internal integrated temperature protection device as claimed in claim 5, wherein the second conductive pad has a lead area consisting of two leads.
  7. 7. The kinds of Mosfet semiconductor device of any of claims 1-6 and , wherein the temperature protection device is a thermistor.
  8. 8. The kinds of Mosfet semiconductor device with internal integrated temperature protection device of claim 7, wherein the positive terminal and the negative terminal of the thermistor are electrically connected to the two pins of the pin area of the second conductive pad, respectively, and the two pins of the pin area of the second conductive pad are insulated from each other.
CN201920172226.8U 2019-01-31 2019-01-31 Mosfet semiconductor device with internal integrated temperature protection device Active CN210006735U (en)

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109786367A (en) * 2019-01-31 2019-05-21 惠州市忠邦电子有限公司 It is a kind of with the Mosfet semiconductor devices for being internally integrated temperature protective device

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN109786367A (en) * 2019-01-31 2019-05-21 惠州市忠邦电子有限公司 It is a kind of with the Mosfet semiconductor devices for being internally integrated temperature protective device
CN109786367B (en) * 2019-01-31 2024-04-05 惠州市忠邦电子有限公司 Mosfet semiconductor device with internal integrated temperature protection device

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