CN209949083U - Power amplifier chip and radio transmitter - Google Patents
Power amplifier chip and radio transmitter Download PDFInfo
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- CN209949083U CN209949083U CN201921242336.3U CN201921242336U CN209949083U CN 209949083 U CN209949083 U CN 209949083U CN 201921242336 U CN201921242336 U CN 201921242336U CN 209949083 U CN209949083 U CN 209949083U
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Abstract
A power amplifier chip and a radio transmitter, the power amplifier chip comprising a power amplification module (1), a control module (2) and a boost driver module (3), wherein: the power amplification module (1) is in a full-bridge structure consisting of four power field effect transistors; the control module (2) is used for controlling the boost driving module (3) according to the received enabling signal so that the boost driving module (3) is in a driving opening state or a driving closing state; the boost driving module (3) is used for driving the power field effect transistor when the boost driving module is in a driving starting state, so that the driven power field effect transistor carries out power amplification on the received electric signal. The device for power amplification is integrated in the chip, so that the area is reduced, the cost is reduced, whether power amplification is carried out or not is controlled through the enable signal, and power loss caused by the use of a high-voltage switch is avoided.
Description
Technical Field
The utility model relates to a radio technology field specifically, relates to a power amplifier chip and radio transmitter.
Background
In the radio transmission system, power is transmitted by using a plurality of coils, and a transmitter can be used in various ways by using a plurality of coils in the prior art. In a conventional method in which a control signal is generated in a Wireless Power Transmission (WPT) transmitter and a Power amplifier and a coil are selected to operate through a high voltage switch, one Power amplifier needs to use at least 6 Power fets and also needs to use a resistor, a capacitor, and a zener diode to ensure stable operation of the high voltage switch, the design is complicated, and an increase in the number of external devices increases a period area, costs, and the like. Alternatively, in the prior art, the power amplifier is controlled by a shunt controller (demux controller) and a boost driving circuit, and the shunt controller is used to implement the function of the high-voltage switch, but the structure of externally using discrete devices increases the design cost and the occupied area.
Disclosure of Invention
Technical problem to be solved
The utility model provides a power amplifier chip and radio transmitter solves above technical problem.
(II) technical scheme
The utility model provides a power amplifier chip, include power amplification module, control module and the drive module that steps up, wherein: the power amplification module is in a full-bridge structure consisting of four power field effect transistors; the control module is used for controlling the boosting driving module according to the received enabling signal so that the boosting driving module is in a driving opening state or a driving closing state; the boost driving module is used for driving the power field effect transistor when the boost driving module is in the driving starting state, so that the driven power field effect transistor performs power amplification on the received electric signal.
Optionally, when the enable signal is a first signal, the control module is configured to control the boost driving module to be in a drive on state, and when the enable signal is a second signal, the control module is configured to control the boost driving module to be in a drive off state.
Optionally, the first signal is a low-level signal or a high-level signal, when the first signal is a low-level signal, the second signal is a high-level signal, and when the first signal is a high-level signal, the second signal is a low-level signal.
Optionally, the boost driving module includes a boost module and a first driving module, the boost module is configured to amplify a voltage at an input end of the boost module, and the first driving module is configured to drive the power field-effect transistor by using the amplified voltage.
Optionally, in the full-bridge structure, one end of each of the two power fets is connected to the electrical signal, the other end of each of the two power fets is connected to one end of each of the other two power fets, and the other end of each of the other two power fets is connected to ground.
Optionally, the number of the boosting driving modules is two, and the boosting driving modules are respectively used for driving and connecting to the two power field effect transistors of the electric signal.
Optionally, the chip further includes two second driving modules, each of which is used for driving the two other power fets connected to ground.
The utility model also provides a radio transmitter, including WPT transmitter, above-mentioned power amplifier chip, transmitting coil and electric capacity, wherein: the number of the power amplifier chips, the number of the transmitting coils and the number of the capacitors are equal, and the number of the power amplifier chips, the number of the transmitting coils and the number of the capacitors are one or more; the WPT transmitter is used for generating an electrical signal; the power amplifier chip is used for performing power amplification on the electric signal; the capacitor is used for filtering the electric signal after power amplification; and the transmitting coil is used for transmitting the filtered electric signal.
Optionally, the WPT transmitter includes one or more control pins for outputting an enable signal, the number of the control pins is not less than the number of the power amplifier chips, and the control module of each power amplifier chip is connected to a different control pin.
Optionally, the WPT transmitter includes two boost pins and two pairs of drive pins, where the high-level pins in the boost pins and the high-level pins in the drive pins are both connected to the boost drive module of the power amplifier chip, and the low-level pins in the drive pins are connected to the second drive module of the power amplifier chip.
(III) advantageous effects
The utility model provides a power amplifier chip and radio transmitter has following beneficial effect:
(1) the scattered power field effect transistors and the peripheral circuits thereof are integrated on a special power amplifier chip, so that the occupied area of the device can be reduced;
(2) by realizing the enabling control function in the power amplifier chip, the traditional high-voltage switch can be replaced, the power loss is avoided, and the cost is reduced;
(3) the radio transmitter realized based on the power amplifier chip has higher efficiency and shorter charging time, thereby reducing the heat generation of the radio transmitter and avoiding the need of arranging a temperature protection device in the radio transmitter.
Drawings
Fig. 1 schematically shows a schematic structural diagram of a power amplifier chip provided by an embodiment of the present invention.
Fig. 2 schematically shows a schematic structural diagram of a radio transmitter provided by an embodiment of the present invention.
Description of reference numerals:
1-a power amplification module; 2-a control module; 3-a boost driving module; 4-a second driving module.
Detailed Description
In order to make the objects, technical solutions and advantages of the present invention more apparent, the present invention will be described in detail with reference to the accompanying drawings.
An embodiment of the present invention shows a power amplifier chip, and the structure of the power amplifier chip is described in detail with reference to fig. 1.
The Power amplifier chip comprises a Power amplification module 1, a control module 2 and a boost driving module 3, wherein the Power amplification module 1 is in a full-bridge structure consisting of four Power Field Effect transistors (Power FETs); the control module 2 is used for controlling the boost driving module 3 according to the received enabling signal, so that the boost driving module 3 is in a driving on state or a driving off state; the boosting driving module 3 is used for driving the power field effect transistor when the power field effect transistor is in a driving starting state, so that the driven power field effect transistor performs power amplification on the received electric signal.
The Power amplification module 1 adopts a full-bridge structure, generally speaking, the full-bridge structure comprises four Power field effect transistors, namely, Power FET-1, Power FET-2, Power FET-3 and Power FET-4, one ends of two Power field effect transistors, namely, Power FET-1 and Power FET-2 are connected to VIN (VIN) pin of a chip, the VIN pin is used for receiving an electric signal and inputting the electric signal into the Power amplification module 1, the other ends of the two Power field effect transistors, namely, Power FET-1 and Power FET-2 are respectively connected with one ends of two other Power field effect transistors, namely, Power FET-3 and Power FET-4, and the other ends of the two other Power field effect transistors, namely, Power FET-3 and Power FET-4 are connected to ground pins of the chip.
The control module 2 is an ENB pin in the chip, and the ENB pin is used for receiving an enable signal. When the enable signal is the first signal, the control module 2 is configured to control the boost driving module 3 to be in a driving on state, and when the enable signal is the second signal, the control module 2 is configured to control the boost driving module 3 to be in a driving off state. The first signal is a low level signal or a high level signal, the second signal is a high level signal when the first signal is a low level signal, and the second signal is a low level signal when the first signal is a high level signal. Generally, when the first signal is a low level signal, that is, the enable signal input from the ENB pin is a low level signal, the boost driving module 3 is controlled to enter a driving on state, so as to drive the power amplification module 1 to perform power amplification on the received electrical signal.
The boosting driving module 3 comprises a boosting module and a first driving module, the boosting module is used for amplifying the voltage at the input end of the boosting module, and the first driving module is used for driving the power field effect transistor by using the amplified voltage. The Boosting module is realized by a Boosting circuit, the first driving module is realized by a driving circuit, and the Boosting circuit and the driving circuit are conventional circuits and are not described herein again. In the embodiment of the present invention, in the Power amplifier chip, the number of the boosting driving module 3 is two, and the boosting driving module is respectively used for driving two Power FETs Power FET-1 and Power FET-2 connected to the VIN pin.
Further, the Power amplifier chip also comprises two second driving modules 4, the second driving modules 4 are also realized by a Driver circuit, and the two second driving modules 4 are respectively used for driving two Power field effect transistors, namely, Power FET-3 and Power FET-4, which are connected to a ground pin.
In the embodiment of the utility model, as the structure shown in fig. 1, when the signal of telecommunication of VIN pin is forward signal, PowerFET-1, Power FET-3 its one end voltage rises, when the enable signal of ENB pin was low level signal this moment, through Boosting circuit drive Driver circuit, and then drive PowerFET-1, Power FET-3 entering Power amplification state to carry out Power amplification to the signal of telecommunication, the signal of telecommunication after the amplification is transmitted away through corresponding Coil. When the electrical signal of the VIN pin is an inverse signal, the voltage of one end of the Power FET-2 and the Power FET-4 is reduced and is lower than the ground voltage signal of the PGND pin, at the moment, when the enable signal of the ENB pin is a low-level signal, the Power FET-2 and the Power FET-4 are driven to enter a Power amplification state through a Driver circuit so as to amplify the Power of the electrical signal, and the amplified electrical signal is transmitted out through a corresponding Coil.
An embodiment of the present invention shows a radio transmitter, and the structure of the radio transmitter is described in detail with reference to fig. 2.
The radio transmitter comprises a WPT transmitter, a power amplifier chip as in the embodiment shown in figure 1, a transmitting coil and a capacitor. In the radio transmitter, the number of power amplifier chips, transmitting coils and capacitors is equal, and is one or more; the WPT transmitter is used for generating an electric signal; the power amplifier chip is used for carrying out power amplification on the electric signal; the capacitor is used for filtering the electric signal after power amplification; the transmitting coil is used for transmitting the filtered electric signal.
One or more power amplifier chips, such as power amplifier chip 1, power amplifier chip 2, … …, power amplifier chip N shown in fig. 2, are connected to the WPT transmitter. Specifically, the WPT transmitter includes one or more control pins GPIO # 1, GPIO # 2, … …, GPIO # N for outputting an enable signal, and the number of the control pins is not less than the number of the power amplifier chips, so that the control module 2 of each power amplifier chip can be connected to different control pins, respectively.
The WPT transmitter includes two boost pins PA _ BST1, PA _ BST2, and two pairs of driving pins PA _ GH1, PA _ GL1, PA _ GH2, PA _ GL2, the boost pins PA _ BST1, PA _ BST2, and the high-level pins PA _ GH1, PA _ GH2 in the driving pins are all connected to the boost driving module 3 of the power amplifier chip, and the low-level pins PA _ GL1, PA _ GL2 in the driving pins are connected to the second driving module 4 of the power amplifier chip.
The WPT transmitter should also include an output pin VOUT that is connected to the VIN pin of the power amplifier chip for inputting the electrical signal generated by the WPT transmitter into the power amplifier chip. The WPT transmitter can control gating of corresponding power amplifier chips to amplify power of electric signals by adjusting level signals of control pins GPIO # 1, GPIO # 2, … … and GPIO # N of the WPT transmitter, if the control pins GPIO # 1 and GPIO # 2 are low level and other control pins are high level, the power amplifier chips 1 and 2 corresponding to the GPIO # 1 and GPIO # 2 are in normal power amplification state, the two chips respectively amplify power of the electric signals and respectively pass through a filter capacitor CPA_1And CPA_2After filtering, the signal is transmitted through the transmitting coils Coil _1 and Coil _ 2.
To sum up, the embodiment of the present invention provides a power amplifier chip and a radio transmitter, which are integrated with a power fet inside the power amplifier chip and a boost circuit and a driver circuit of the power fet, and an integrated control module, so that the power amplifier chip can be selected to be activated or deactivated by an enable signal, the integrated chip reduces the device occupation area, and avoids the power loss and high cost caused by using a high voltage switch in the conventional method, and avoids the complex design caused by using a demux controller in the conventional method, thereby increasing the efficiency of the radio transmitter, and reducing the heating condition of the radio transmitter, and avoiding the need of additionally arranging a protection device.
The above-mentioned embodiments, further detailed description of the objects, technical solutions and advantages of the present invention, it should be understood that the above-mentioned embodiments are only specific embodiments of the present invention, and are not intended to limit the present invention, and any modifications, equivalent substitutions, improvements, etc. made within the spirit and principle of the present invention should be included in the scope of the present invention.
Claims (10)
1. A power amplifier chip comprising a power amplification module (1), a control module (2) and a boost drive module (3), wherein:
the power amplification module (1) is in a full-bridge structure consisting of four power field effect transistors;
the control module (2) is used for controlling the boost driving module (3) according to the received enabling signal, so that the boost driving module (3) is in a driving opening state or a driving closing state;
the boost driving module (3) is used for driving the power field effect transistor when the boost driving module is in the driving starting state, so that the driven power field effect transistor performs power amplification on the received electric signal.
2. The power amplifier chip as claimed in claim 1, wherein the control module (2) is configured to control the boost driving module (3) to be in a driving on state when the enable signal is a first signal, and the control module (2) is configured to control the boost driving module (3) to be in a driving off state when the enable signal is a second signal.
3. The power amplifier chip of claim 2, wherein the first signal is a low level signal or a high level signal, the second signal is a high level signal when the first signal is a low level signal, and the second signal is a low level signal when the first signal is a high level signal.
4. The power amplifier chip as recited in claim 1, wherein the boost driving module (3) comprises a boost module and a first driving module, the boost module is configured to amplify a voltage at an input terminal of the boost module, and the first driving module is configured to drive the power fet with the amplified voltage.
5. The power amplifier chip of claim 1, wherein in the full-bridge configuration, one end of each of two power fets is connected to the electrical signal, and the other end of each of the two power fets is connected to one end of each of the other two power fets, and the other ends of the two power fets are connected to ground.
6. The power amplifier chip according to claim 5, wherein the number of the boost driving modules (3) is two, respectively for driving two power fets connected to the electrical signal.
7. The power amplifier chip according to claim 5, wherein the chip further comprises two second driving modules (4) for driving the two further power fets connected to ground, respectively.
8. A radio transmitter comprising a WPT transmitter, the power amplifier chip of any one of claims 1-7, a transmit coil, and a capacitance, wherein:
the number of the power amplifier chips, the number of the transmitting coils and the number of the capacitors are equal, and the number of the power amplifier chips, the number of the transmitting coils and the number of the capacitors are one or more;
the WPT transmitter is used for generating an electrical signal;
the power amplifier chip is used for performing power amplification on the electric signal;
the capacitor is used for filtering the electric signal after power amplification;
and the transmitting coil is used for transmitting the filtered electric signal.
9. The radio transmitter of claim 8, wherein the WPT transmitter includes one or more control pins for outputting an enable signal, the number of the control pins is not less than the number of the power amplifier chips, and the control modules (2) of each of the power amplifier chips are respectively connected to different control pins.
10. The radio transmitter of claim 8, wherein the WPT transmitter comprises two boost pins and two pairs of drive pins, the high level pins in the boost pins and the drive pins both being connected to a boost drive module (3) of the power amplifier chip, the low level pins in the drive pins being connected to a second drive module (4) of the power amplifier chip.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921242336.3U CN209949083U (en) | 2019-08-01 | 2019-08-01 | Power amplifier chip and radio transmitter |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201921242336.3U CN209949083U (en) | 2019-08-01 | 2019-08-01 | Power amplifier chip and radio transmitter |
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| CN209949083U true CN209949083U (en) | 2020-01-14 |
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| CN201921242336.3U Active CN209949083U (en) | 2019-08-01 | 2019-08-01 | Power amplifier chip and radio transmitter |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110311693A (en) * | 2019-08-01 | 2019-10-08 | 江西联智集成电路有限公司 | A kind of power amplifier chip and transmitting set |
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2019
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110311693A (en) * | 2019-08-01 | 2019-10-08 | 江西联智集成电路有限公司 | A kind of power amplifier chip and transmitting set |
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