CN209881746U - Resonance unit and filter - Google Patents
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- CN209881746U CN209881746U CN201921079315.4U CN201921079315U CN209881746U CN 209881746 U CN209881746 U CN 209881746U CN 201921079315 U CN201921079315 U CN 201921079315U CN 209881746 U CN209881746 U CN 209881746U
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Abstract
The application provides a resonance unit and a filter, and relates to the technical field of electronics. Wherein, the resonance unit includes: a substrate; a first conductive layer disposed on the substrate; and the second conducting layer is arranged on one side of the first conducting layer, which is far away from the substrate, and is electrically connected with the first conducting layer through a conducting structure. The first conducting layer and the second conducting layer are arranged at intervals, and projections of the first conducting layer and the second conducting layer on the substrate are at least partially overlapped, so that a parasitic capacitor with a preset capacitance value is formed between the first conducting layer and the second conducting layer, and the preset capacitance value is determined based on the inductance of the first conducting layer, the second conducting layer and the conducting structure and the transmission zero point of the resonant unit. Through the arrangement, the problems of complicated electric connection and low inductance quality factor caused by the need of separately arranging the capacitor in the prior art can be solved.
Description
Technical Field
The application relates to the technical field of electronics, in particular to a resonance unit and a filter.
Background
The filter is generally provided with a plurality of resonance units for isolating signals of a specific frequency (transmission zero). As shown in fig. 1, a conventional resonance unit is configured by an inductance element and a capacitance element connected in parallel with the inductance element.
The inventor has found that the resonant unit requires parallel connection of the inductance element and the capacitance element, which makes the electrical connection complicated and is not favorable for miniaturization of the resonant unit. Also, the quality factor of the inductance is reduced due to the presence of the capacitive element.
SUMMERY OF THE UTILITY MODEL
In view of the above, an object of the present invention is to provide a resonant unit and a filter, so as to solve the problems of complicated electrical connection and low quality factor of inductance caused by the need of separately disposing a capacitor in the prior art.
In order to achieve the above purpose, the embodiment of the present application adopts the following technical solutions:
a resonant cell, comprising:
a substrate;
a first conductive layer disposed on the substrate;
the second conducting layer is arranged on one side, far away from the substrate, of the first conducting layer and is electrically connected with the first conducting layer through a conducting structure;
wherein the first conductive layer and the second conductive layer are arranged at intervals, and projections of the first conductive layer and the second conductive layer on the substrate are at least partially overlapped, so that a parasitic capacitance with a preset capacitance value is formed between the first conductive layer and the second conductive layer, and the preset capacitance value is determined based on inductances possessed by the first conductive layer, the second conductive layer and the conductive structure and a transmission zero point of the resonant unit.
In a preferred option of the embodiment of the present application, in the resonant unit, the first conductive layer and the second conductive layer are planar spiral structures.
In a preferred option of the embodiment of the present application, in the resonant unit, the first conductive layer includes a plurality of first strip-shaped structures connected in sequence to form the planar spiral structure, and the second conductive layer includes a plurality of second strip-shaped structures connected in sequence to form the planar spiral structure;
the widths of the first strip-shaped structure and the second strip-shaped structure corresponding to the parts of the first conducting layer and the second conducting layer, which are overlapped in projection on the substrate, are the same.
In a preferred option of this embodiment of the application, in the resonant unit, the second conductive layer has at least one second stripe structure that is completely overlapped with a projection of one first stripe structure of the first conductive layer on the substrate.
In a preferred option of this embodiment of the application, in the resonant unit, the first conductive layer and the second conductive layer are disposed in parallel, and the conductive structure is perpendicular to the first conductive layer and the second conductive layer.
In a preferred option of the embodiment of the present application, in the resonant unit, the first conductive layer, the second conductive layer and the conductive structure are made of the same material and are made of a metal material.
In a preferred option of the embodiment of the present application, in the resonant unit, the resonant unit further includes:
an insulating layer between the first conductive layer and the second conductive layer, the insulating layer serving as a dielectric of the parasitic capacitance.
In a preferred option of the embodiment of the present application, in the resonant unit, the insulating layer is made of polyimide, and the polyimide provides a dielectric constant of 3.2 for the parasitic capacitance.
In a preferred option of this embodiment of the application, in the resonant unit, a through hole penetrating through the insulating layer is disposed on the insulating layer, and the conductive structure is electrically connected to the first conductive layer and the second conductive layer through the through hole.
On the basis, an embodiment of the present application further provides a filter, which includes a plurality of the resonant units, and transmission zeros of the resonant units are different.
According to the resonance unit and the filter provided by the application, the first conducting layer and the second conducting layer are arranged in a matched mode, so that the formed parasitic capacitor can replace a capacitor element which is arranged independently in the prior art. Thus, in the first aspect, it is possible to eliminate the need to electrically connect the inductance element and the capacitance element, thereby reducing the complexity of the device and facilitating the miniaturization process. In the second aspect, the problem of a reduction in quality factor of the inductance element due to coupling between elements caused by separately providing the capacitance element can be avoided. In the third aspect, the manufacturing cost of the resonance unit can be reduced because the capacitor element is not separately provided. Therefore, the resonance unit improved by the embodiment of the application has higher practical value.
In order to make the aforementioned objects, features and advantages of the present application more comprehensible, preferred embodiments accompanied with figures are described in detail below.
Drawings
Fig. 1 is a schematic circuit diagram of a conventional resonant cell in the prior art.
Fig. 2 is a schematic structural diagram of a resonant unit according to an embodiment of the present application.
Fig. 3 is another schematic structural diagram of a resonant unit according to an embodiment of the present application.
Fig. 4 is a diagram of a positional relationship between a second conductive layer and a conductive structure according to an embodiment of the present disclosure.
Fig. 5 is a positional relationship diagram of a first conductive layer and a second conductive layer according to an embodiment of the present disclosure.
Fig. 6 is a waveform diagram of simulation provided in an embodiment of the present application.
Fig. 7 is another schematic structural diagram of a resonant unit according to an embodiment of the present application.
Fig. 8 is a schematic structural diagram of an insulating layer according to an embodiment of the present application.
Fig. 9 is a schematic flowchart of a method for manufacturing a resonant unit according to an embodiment of the present application.
Icon: 100-a resonant cell; 110-a substrate; 120-a first conductive layer; 130-a second conductive layer; 140-a conductive structure; 150-an insulating layer; 151-through hole.
Detailed Description
In order to make the objects, technical solutions and advantages of the embodiments of the present application clearer, the technical solutions in the embodiments of the present application will be clearly and completely described below with reference to the drawings in the embodiments of the present application, and it is obvious that the described embodiments are only a part of the embodiments of the present application, and not all the embodiments. The components of the embodiments of the present application, generally described and illustrated in the figures herein, can be arranged and designed in a wide variety of different configurations.
Thus, the following detailed description of the embodiments of the present application, presented in the accompanying drawings, is not intended to limit the scope of the claimed application, but is merely representative of selected embodiments of the application. All other embodiments, which can be derived by a person skilled in the art from the embodiments given herein without making any creative effort, shall fall within the protection scope of the present application.
As shown in fig. 2, the present embodiment provides a resonant cell 100, which may include a substrate 110, a first conductive layer 120, a second conductive layer 130, and a conductive structure 140.
In detail, the first conductive layer 120 may be disposed on the substrate 110. The second conductive layer 130 may be disposed on a side of the first conductive layer 120 away from the substrate 110, and is spaced apart from the first conductive layer 120, and is electrically connected to the first conductive layer 120 through the conductive structure 140, so as to form an inductance element including the first conductive layer 120, the conductive structure 140, and the second conductive layer 130.
Wherein projections of the first conductive layer 120 and the second conductive layer 130 on the substrate 110 at least partially coincide to form a parasitic capacitance having a predetermined capacitance value between the first conductive layer 120 and the second conductive layer 130. That is, the first conductive layer 120 and the second conductive layer 130 may be respectively used as a first plate and a second plate of a capacitor to form the parasitic capacitor.
It should be noted that the resonance unit 100 has a transmission zero (i.e., a resonance frequency of the resonance unit 100), and the transmission zero can be determined based on a filter applied by the resonance unit 100. The predetermined capacitance value is predetermined based on the inductances that the first conductive layer 120, the second conductive layer 130, and the conductive structure 140 have and the transmission zero point. That is, the parasitic capacitance and the inductance element may form a resonant circuit, thereby generating the transmission zero point.
For example, if the transmission zero point of the resonance unit 100 needs to be set to f0The inductance value of the inductance element is L0At this time, the predetermined capacitance value C may be calculated according to the following calculation formula0：
Then, after the predetermined capacitance value is calculated, the relative positional relationship between the first conductive layer 120 and the second conductive layer 130 may be determined so that, after setting based on the relative positional relationship, the parasitic capacitance formed by the first conductive layer 120 and the second conductive layer 130 and the inductance element can constitute the resonance unit, thereby allowing the resonance unit 100 to have the transmission zero point.
With such an arrangement, on the basis of overcoming the technical prejudice that the parasitic capacitance needs to be suppressed, the first conductive layer 120 and the second conductive layer 130 are skillfully arranged in a matching manner, so that the formed parasitic capacitance can replace a separately arranged capacitive element in the prior art. Therefore, the first aspect makes it possible to eliminate the need to electrically connect the inductance element and the capacitance element, thereby reducing the complexity of the device and facilitating the miniaturization process. In the second aspect, the problem of a reduction in quality factor of the inductance element due to coupling between elements caused by separately providing the capacitance element can be avoided. In the third aspect, the manufacturing cost of the resonance unit 100 can be reduced because a capacitor element is not separately provided. Therefore, the resonant unit 100 provided by the embodiment of the present application has a high practical value.
Alternatively, the material of the substrate 110 is not limited and may be selected according to the requirements of practical applications.
In an alternative example, if the first conductive layer 120 is directly disposed on the substrate 110, the substrate 110 may be made of a non-conductive material. For example, the substrate 110 may be made of silicon or a glass material.
Alternatively, the materials of the first conductive layer 120 and the second conductive layer 130 may be the same or different, as long as they can conduct electricity to form an inductance element and a parasitic capacitance.
For example, in an alternative example, the materials of the first conductive layer 120 and the second conductive layer 130 are the same, and both may be metal materials. The material of the conductive structure 140 may be the same as the material of the first conductive layer 120 and the second conductive layer 130.
It should be noted that the first conductive layer 120 and the second conductive layer 130 may be disposed in parallel or disposed in non-parallel (for example, there is a certain inclination).
In an alternative example, the first conductive layer 120 and the second conductive layer 130 are disposed in parallel. Also, the conductive structure 140 may be perpendicular to the first conductive layer 120 and the second conductive layer 130.
Alternatively, the shapes of the first conductive layer 120 and the second conductive layer 130 are not limited, and may be selected according to the actual application requirement as long as the inductance element can be formed through electrical connection and the parasitic capacitance is formed.
For example, in conjunction with fig. 3 and 4, in an alternative example, the first conductive layer 120 may have a planar spiral structure, and the second conductive layer 130 may also have a planar spiral structure. By arranging the first conductive layer 120 and the second conductive layer 130 in a planar spiral shape, the parts of the first conductive layer 120 and the parts of the second conductive layer 130 belong to the same plane, so that the volume of the resonant unit 100 is effectively reduced, and the miniaturized arrangement is facilitated.
In detail, in an alternative example, the first conductive layer 120 may include a plurality of first stripe structures connected in sequence to form the planar spiral structure. The second conductive layer 130 may also include a plurality of second strip structures connected in sequence to form the planar spiral structure.
The number and size of the first strip-shaped structures and the second strip-shaped structures can be the same or different. In this embodiment, the first stripe structures and the second stripe structures have different numbers, and the widths of the first stripe structures and the second stripe structures corresponding to the overlapped projection portions on the substrate 110 are the same.
For example, in conjunction with fig. 5, in an alternative example, the number of the first stripe structures may be 5 (i shown in fig. 5)11、l12、l13、l14And l15) The number of the second stripe structures may be 6 (e.g./, shown in fig. 5)21、l22、l23、l24、l25And l26)。
There may be 4 first stripe structures and 4 second stripe structures, which are projected onto the substrate 110 and completely overlap in the width direction of the corresponding stripe structures, so as to avoid the problem that the overall volume of the resonant unit 100 is increased due to the fact that the first stripe structures and the corresponding second stripe structures are staggered in the width direction.
For example, |12And l24Completely overlapping in their width direction,/13And l23Completely overlapping in their width direction,/14And l22Completely overlapping in their width direction,/15And l25Completely overlapping in its own width direction.
Specific parameters (such as length, width and the like) of each first strip-shaped structure and each second strip-shaped structure are not limited and can be selected according to actual application requirements.
For example, in an alternative example, when the transmission zero point of the resonant unit 100 is 7.9GHz and the inductances of the first conductive layer 120, the second conductive layer 130 and the conductive structure 140 are 5nH, the predetermined capacitance value may be calculated to be 0.08pF according to the above calculation formula.
Thus, when the dielectric constant of the dielectric between the first conductive layer 120 and the second conductive layer 130 is 3.2, the spacing distance between the first conductive layer 120 and the second conductive layer 130 (when arranged in parallel) may be 24um, and in the second stripe structures, l is22Can be 480um in length and 70um, l in width23Can be 460um in length and 80um, l in width24Can be 700um in length and 70um, l in width25May have a length of 700um and a width of 60 um.
In the above example, the theoretical model of the resonant unit 100 as designed and the resonant unit 100 formed by real physical devices are simulated, and a simulated waveform diagram as shown in fig. 6 is obtained.
In the simulated waveform diagram, the waveform corresponding to K1 is a result of simulation of the theoretical model of the resonant cell 100, and the waveform corresponding to K2 is a result of simulation of the resonant cell 100 formed of real physical devices. As can be seen from the analysis of K1 and K2, the two waveforms tend to coincide at the peak position, for example, close to 7.9GHz, and therefore, the resonant unit 100 provided in the embodiment of the present application can meet the requirement of having a transmission zero point without separately designing a capacitive element.
Further, in order to achieve electrical isolation between the first conductive layer 120 and the second conductive layer 130, in this embodiment, in combination with fig. 7, the resonant unit 100 may further include an insulating layer 150.
In detail, the insulating layer 150 may be located between the first conductive layer 120 and the second conductive layer 130. That is, the insulating layer 150 may be filled in the space between the first conductive layer 120 and the second conductive layer 130.
The insulating layer 150 may also serve as a dielectric of a parasitic capacitance formed by the first conductive layer 120 and the second conductive layer 130.
That is, the dielectric constant of the parasitic capacitance is determined according to the material of the insulating layer 150. Therefore, the predetermined capacitance value can also be determined by selecting the material of the insulating layer 150.
For example, when it is desired to provide the parasitic capacitance with a dielectric constant of 3.2, polyimide (polyimide) may be selected as the insulating layer 150.
It is contemplated that the first conductive layer 120 and the second conductive layer 130 also need to be electrically connected through the conductive structure 140 to form an inductive element. Therefore, in this embodiment, with reference to fig. 8, a through hole 151 penetrating the insulating layer 150 may be formed in the insulating layer 150.
That is, the through hole 151 may penetrate from a surface of the insulating layer 150 adjacent to the first conductive layer 120 to a surface of the insulating layer 150 adjacent to the second conductive layer 130, so that the conductive structure 140 may be electrically connected to the first conductive layer 120 and the second conductive layer 130 through the through hole 151, respectively.
The specific shape of the through hole 151 is not limited, and may be selected according to the actual application requirement, for example, the through hole may be configured according to the shape of the conductive structure 140.
In an alternative example, when the conductive structure 140 is a square structure, the through hole 151 may be a corresponding square hole. In another alternative example, when the conductive structure 140 has a cylindrical structure, the through holes 151 may be corresponding circular holes.
It should be noted that, the method for manufacturing the resonant unit is not limited, and may be selected according to the actual application requirements. For example, in an alternative example, in connection with fig. 9, the resonance unit may be fabricated by the following steps.
In step S110, a substrate 110 is provided.
Step S120, a first conductive layer 120 is disposed on the substrate 110.
In step S130, a second conductive layer 130 is disposed on the basis of the side of the first conductive layer 120 away from the substrate 110.
Step S140, electrically connecting the first conductive layer 120 and the second conductive layer 130 through the conductive structure 140.
In this embodiment, a substrate 110 may be provided, and then the first conductive layer 120, the second conductive layer 130 and the conductive structure 140 are disposed on the substrate 110 to form the resonant unit 100 having a transmission zero point.
The first conductive layer 120 may be directly disposed on the substrate 110, or may be disposed on the substrate 110 at intervals through other structures, as long as the first conductive layer 120 and the substrate 110 are ensured not to be conductive. For example, when the substrate 110 is a non-conductive material, the first conductive layer 120 may be directly disposed on the substrate 110. In an alternative example, the substrate 110 may be made of silicon or a glass material.
It should be noted that, when step S130 is executed, the first conductive layer 120 and the second conductive layer 130 need to be disposed at an interval, and projections of the first conductive layer 120 and the second conductive layer 130 on the substrate 110 at least partially overlap, so as to form a parasitic capacitor with a predetermined capacitance value between the first conductive layer 120 and the second conductive layer 130.
By performing step S140, the first conductive layer 120 and the second conductive layer 130 may be electrically connected, thereby forming an inductance element including the first conductive layer 120, the second conductive layer 130, and the conductive structure 140. Then, based on the formed parasitic capacitance and inductance element, a resonance unit may be constructed.
Wherein the resonant unit may generate the transmission zero point since the predetermined capacitance value is predetermined based on the inductance of the first conductive layer 120, the second conductive layer 130, and the conductive structure 140 and the transmission zero point.
After determining the predetermined capacitance value, a relative positional relationship between the first conductive layer 120 and the second conductive layer 130 may be determined, and the second conductive layer 130 is disposed based on the relative positional relationship when performing step S130.
For example, in an alternative example, step S130 may include the steps of:
first, a separation distance between the first conductive layer 120 and the second conductive layer 130 and an overlapping area of projections on the substrate 110 are calculated according to a capacitance calculation formula based on the predetermined capacitance value. Then, the second conductive layer 130 is disposed on a side of the first conductive layer 120 away from the substrate 110 according to the separation distance and the overlapping area.
Further, in order to electrically isolate the first conductive layer 120 from the second conductive layer 130, the method for manufacturing the resonant unit may further include the steps of: an insulating layer 150 is disposed between the first conductive layer 120 and the second conductive layer 130.
The insulating layer 150 may also serve as a dielectric of the parasitic capacitor, providing a dielectric constant of the parasitic capacitor. The second conductive layer 130 may be supported to improve stability inside the resonant unit 100.
It is contemplated that the first conductive layer 120 and the second conductive layer 130 also need to be electrically connected through the conductive structure 140 to form an inductive element. Therefore, in this embodiment, the method for manufacturing the resonant unit may further include the following steps: a through hole 151 penetrating the insulating layer 150 is formed in the insulating layer 150.
After the through hole 151 is opened, in step S140, the conductive structure 140 is electrically connected to the first conductive layer 120 and the second conductive layer 130 through the through hole 151.
It should be noted that the sequence of the steps of the method for manufacturing the resonant unit is not limited, and may be selected according to the actual application requirements.
For example, in an alternative example, the first conductive layer 120 may be disposed on the substrate 110, then the conductive structure 140 may be disposed, and finally the second conductive layer 130 may be disposed.
For another example, in another alternative example, the first conductive layer 120, the second conductive layer 130, and the conductive structure 140 may be disposed on the substrate 110 after being disposed in a predetermined relative position relationship.
The embodiment of the present application further provides a filter, which may include a plurality of the resonant units 100, and transmission zeros of the resonant units 100 are different.
Considering that the specific structure of the resonant unit 100 can be combined with the above description, it is not repeated here.
In summary, the resonant unit 100 and the filter provided by the present application can form a parasitic capacitor by the cooperative arrangement of the first conductive layer 120 and the second conductive layer 130, so as to replace a separately arranged capacitor element in the prior art. Thus, in the first aspect, it is possible to eliminate the need to electrically connect the inductance element and the capacitance element, thereby reducing the complexity of the device and facilitating the miniaturization process. In the second aspect, the problem of a reduction in quality factor of the inductance element due to coupling between elements caused by separately providing the capacitance element can be avoided. In the third aspect, the manufacturing cost of the resonance unit 100 can be reduced because a capacitor element is not separately provided. Therefore, the resonant unit 100 provided by the embodiment of the present application has a high practical value.
The above description is only a preferred embodiment of the present application and is not intended to limit the present application, and various modifications and changes may be made by those skilled in the art. Any modification, equivalent replacement, improvement and the like made within the spirit and principle of the present application shall be included in the protection scope of the present application.
Claims (10)
1. A resonant cell, comprising:
a substrate;
a first conductive layer disposed on the substrate;
the second conducting layer is arranged on one side, far away from the substrate, of the first conducting layer and is electrically connected with the first conducting layer through a conducting structure;
wherein the first conductive layer and the second conductive layer are arranged at intervals, and projections of the first conductive layer and the second conductive layer on the substrate are at least partially overlapped, so that a parasitic capacitance with a preset capacitance value is formed between the first conductive layer and the second conductive layer, and the preset capacitance value is determined based on the inductance of the first conductive layer, the second conductive layer and the conductive structure and the transmission zero point of the resonant unit.
2. The resonating unit of claim 1, wherein the first and second conductive layers are planar helical structures.
3. The resonant cell of claim 2, wherein the first conductive layer comprises a plurality of first strip-like structures connected in series to form the planar helical structure, and the second conductive layer comprises a plurality of second strip-like structures connected in series to form the planar helical structure;
the widths of the first strip-shaped structure and the second strip-shaped structure corresponding to the parts of the first conducting layer and the second conducting layer, which are overlapped in projection on the substrate, are the same.
4. The resonant cell of claim 3, wherein the second conductive layer has at least one second stripe structure that completely coincides with a projection of one first stripe structure of the first conductive layer onto the substrate.
5. The resonant cell of claim 1, wherein the first conductive layer and the second conductive layer are arranged in parallel, and the conductive structure is perpendicular to the first conductive layer and the second conductive layer.
6. The resonant cell of claim 1, wherein the first conductive layer, the second conductive layer, and the conductive structure are the same material and are a metallic material.
7. The resonating unit of any one of claims 1-6, further comprising:
an insulating layer between the first conductive layer and the second conductive layer, the insulating layer serving as a dielectric of the parasitic capacitance.
8. The resonant cell of claim 7, wherein the material of the insulating layer is a polyimide that provides the parasitic capacitance with a dielectric constant of 3.2.
9. The resonator element according to claim 7, wherein the insulating layer is provided with a through hole penetrating therethrough, and the conductive structure is electrically connected to the first conductive layer and the second conductive layer through the through hole, respectively.
10. A filter comprising a plurality of resonant cells according to any of claims 1 to 9, each of said resonant cells having a different transmission zero.
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| CN201921079315.4U CN209881746U (en) | 2019-07-10 | 2019-07-10 | Resonance unit and filter |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110233604A (en) * | 2019-07-10 | 2019-09-13 | 安徽安努奇科技有限公司 | Resonant element production method and resonant element |
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| Publication number | Priority date | Publication date | Assignee | Title |
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| CN110233604A (en) * | 2019-07-10 | 2019-09-13 | 安徽安努奇科技有限公司 | Resonant element production method and resonant element |
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