CN209807784U - Semiconductor radiation temperature control crib - Google Patents

Semiconductor radiation temperature control crib Download PDF

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Publication number
CN209807784U
CN209807784U CN201821442603.7U CN201821442603U CN209807784U CN 209807784 U CN209807784 U CN 209807784U CN 201821442603 U CN201821442603 U CN 201821442603U CN 209807784 U CN209807784 U CN 209807784U
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China
Prior art keywords
phase change
temperature
crib
semiconductor
bed board
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CN201821442603.7U
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Chinese (zh)
Inventor
吴会军
徐涛
梁绮祯
姚仕明
郑小赞
钟若美
尹家灏
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Guangzhou University
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Guangzhou University
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Abstract

The utility model relates to a semiconductor radiation temperature control crib, which comprises a crib frame and a phase change radiation plate fixed on the upper end of the crib frame; the phase change radiation plate comprises a wrapping layer, and a heat insulation plate, a semiconductor heater and a shaping phase change material layer which are sequentially arranged from top to bottom; the wrapping layer wraps the insulation board, the semiconductor heater and the shaping phase change material layer. The phase change temperature of the shaping phase change material layer is 15-35 ℃, the insulation board is made of polyurethane, polystyrene or aerogel, and the thickness of the insulation board is 1-5 cm. The bed frame comprises a bed board and four support rods which are respectively fixed at four corners of the bed board, the upper ends of the four support rods are parallel and level, and the phase change radiation plate is fixed at the upper ends of the support rods. The crib can provide comfortable temperature environment for the baby, belongs to the technical field of cribs.

Description

Semiconductor radiation temperature control crib
Technical Field
The utility model relates to a technical field of crib especially relates to a semiconductor radiation accuse temperature crib.
Background
At present, most of household cribs do not have constant temperature functions of heating, cooling and the like, and a hot and comfortable environment is difficult to build. When the baby crib is used, cotton quilts, clothes and the like are needed for keeping the baby warm, the baby is bloated when wearing the baby crib, and the free movement space of the baby is limited; when the temperature needs to be reduced, the air conditioner and the fan of a room are mostly passed through, the energy consumption is high, and the energy-saving personalized air conditioner is lacked.
The patent with application number 201310565361.6 discloses a bird nest type constant temperature water bed for nursing premature infants, wherein an electric heating element is arranged in a water bag cushion, and the temperature of liquid in the water bag is adjusted through a temperature controller to provide a constant temperature environment for infants; but the inside of the water bag is electrified, so that certain potential safety hazard exists. The patent with application number 201720008245.8 discloses a phase-change constant-temperature mattress, which uses phase-change materials as fillers in the mattress, adopts an electric heating cable mode for heating, and maintains a constant-temperature environment through a phase-change process; however, the skin of the infant is young and tender and is directly contacted with a heating object (a phase change mattress), so that the possibility of low-temperature scald exists.
Therefore, the existing constant temperature bed has certain potential safety hazard, and the safety and the comfort of the constant temperature bed for the baby are further provided.
SUMMERY OF THE UTILITY MODEL
To the technical problem who exists among the prior art, the utility model aims at: the semiconductor radiation temperature control crib can provide a comfortable temperature environment for infants.
In order to achieve the above purpose, the utility model adopts the following technical scheme:
a semiconductor radiation temperature control crib comprises a crib frame and a phase change radiation plate fixed at the upper end of the crib frame; the phase change radiation plate comprises a wrapping layer, and a heat insulation plate, a semiconductor heater and a shaping phase change material layer which are sequentially arranged from top to bottom; the wrapping layer wraps the insulation board, the semiconductor heater and the shaping phase change material layer.
Further, the method comprises the following steps: the phase change temperature of the shaping phase change material layer is 15-35 ℃, the insulation board is made of polyurethane, polystyrene or aerogel, and the thickness of the insulation board is 1-5 cm.
Further, the method comprises the following steps: the bed frame comprises a bed board and four support rods which are respectively fixed at four corners of the bed board, the upper ends of the four support rods are parallel and level, and the phase change radiation plate is fixed at the upper ends of the support rods.
Further, the method comprises the following steps: the bed board is equipped with the guardrail all around, and the guardrail comprises a horizon bar and many vertical poles, and many vertical poles arrange in proper order along the axial direction of horizon bar, and the upper end and the horizon bar of vertical pole are fixed mutually, and the lower extreme of vertical pole is fixed on the bed board, and the both ends of horizon bar are fixed respectively on two adjacent bracing pieces.
Further, the method comprises the following steps: a mattress is laid on the bed board and is made of cotton or cotton blended fabric.
Further, the method comprises the following steps: the support rod is made of metal, plastic or wood, the diameter of the support rod is 2-5 cm, the support rod is solid or hollow, and the height of the support rod is 50-100 cm.
Further, the method comprises the following steps: the diameters of the horizontal rods and the vertical rods are 0.5-5 cm, the horizontal rods and the vertical rods are made of metal, plastic or wood, and the distance between every two adjacent vertical rods is 5-10 cm.
Further, the method comprises the following steps: the crib still includes the temperature sensor of fixing in one of them corner of bed board, and the phase transition radiant panel still includes opens and stops the ware, and the temperature sensor opens and stops ware signal connection, opens and stops ware and semiconductor heater signal connection.
Further, the method comprises the following steps: the temperature sensor is a thermocouple temperature measuring element or a thermal resistance temperature measuring element, and the temperature measuring precision is +/-0.2 ℃.
Further, the method comprises the following steps: the distance between the lower surface of the wrapping layer and the bed board is 30-60 cm.
In general, the utility model has the advantages as follows:
the semiconductor radiation temperature control crib can ensure that a baby can rest and grow in a heat and comfortable environment, and the environment temperature of the crib is controlled to be 25-27 ℃ by default; when the baby uses the baby crib, a quilt does not need to be covered and other warm-keeping articles do not need to be used, the contact with coarse textile fabrics is reduced, the clothes are prevented from being overstaffed, a larger stretching space is provided for the baby crib, and the development of bones is facilitated; meanwhile, the utility model adopts a semiconductor heater and a non-contact radiation temperature control mode, so that the safety and the comfort level are high; and the utility model discloses a personalized constant temperature mode only controls the temperature to the crib environment, need not carry out whole accuse temperature to all the other room parts, has energy-conserving effect. The semiconductor radiation constant-temperature crib is safe, constant-temperature, energy-saving and flexible to control, can be used for keeping warm in winter and cooling in summer, and provides a comfortable temperature environment for infants.
Drawings
Fig. 1 is a schematic structural view of the present crib.
Fig. 2 is a schematic structural view of a phase change radiation plate.
Detailed Description
The present invention will be described in further detail with reference to the accompanying drawings and specific embodiments.
To facilitate a uniform view of the various reference numbers within the drawings, reference numbers appearing in the drawings are now described collectively as follows:
1 is a supporting rod, 2 is a bed plate, 3 is a horizontal rod, 4 is a vertical rod, 5 is a phase change radiation plate, 6 is a temperature sensor, 5-1 is a heat preservation plate, 5-2 is a start-stop device, 5-3 is a semiconductor heater, 5-4 is a shaping phase change material layer, and 5-5 is a wrapping layer.
Referring to fig. 1 and 2, a semiconductor radiation temperature-controlled crib comprises a crib frame and a phase-change radiation plate fixed on the upper end of the crib frame. The phase change radiation plate comprises a wrapping layer, and a heat insulation plate, a semiconductor heater and a shaping phase change material layer which are sequentially arranged from top to bottom and are sequentially contacted. The wrapping layer wraps the insulation board, the semiconductor heater and the sizing phase change material layer, namely the wrapping layer wraps the upper surface and the side surface of the insulation board, wraps the side surface of the semiconductor heater and wraps the lower surface and the side surface of the sizing phase change material layer. A semiconductor heater is a kind of existing technology, and can heat (heat source) and also refrigerate (cold source). The phase change temperature of the shaping phase change material layer is 15-35 ℃, the shaping phase change material layer is used for providing constant temperature, the shaping is used for fixing the phase change material, the phase change material is not easy to deform and keeps the original shape, and the shaping phase change material layer belongs to the prior art. The heat preservation plate is made of polyurethane, polystyrene or aerogel, and the thickness of the heat preservation plate is 1-5 cm.
The bed frame comprises a bed board and four support rods which are respectively fixed at four corners of the bed board, the upper ends of the four support rods are parallel and level, the phase change radiation plate is fixed at the upper ends of the support rods, and the upper ends of the support rods are fixed with the wrapping layer. The bedstead has simple structure and low manufacturing cost. The support rod is made of metal, plastic or wood, the diameter of the support rod is 2-5 cm, the support rod is solid or hollow, and the height of the support rod is 50-100 cm. The support rod has simple structure and low manufacturing cost. The distance from the lower surface of the wrapping layer to the bed board is 30-60 cm, and the distance is suitable for infants.
The bed board all around be equipped with the guardrail, each side of bed board all is equipped with the guardrail, every guardrail all comprises a horizon bar and many vertical poles, many vertical poles arrange in proper order along the axial direction of horizon bar, the upper end and the horizon bar of vertical pole are fixed mutually, the lower extreme of vertical pole is fixed on the bed board, the both ends of horizon bar are fixed respectively on two adjacent bracing pieces, the one end of horizon bar is fixed on one of them bracing piece, the other end of horizon bar is fixed on another adjacent bracing piece. The guardrail has simple structure and low manufacturing cost. The diameters of the horizontal rods and the vertical rods are 0.5-5 cm, the horizontal rods and the vertical rods are made of metal, plastic or wood, and the distance between every two adjacent vertical rods is 5-10 cm. The horizontal rod has simple structure and low manufacturing cost.
A mattress is laid on the bed board and is made of cotton or cotton blended fabric. The mattress has wide source and low cost.
The crib still includes the temperature sensor of fixing in one of them corner of bed board, and the phase transition radiant panel still includes opens and stops the ware, and the temperature sensor opens and stops ware signal connection, opens and stops ware and semiconductor heater signal connection. The temperature sensor can detect the ambient temperature, the start-stop device can control the working state of the semiconductor heater, and the signal control and transmission among the temperature sensor, the start-stop device and the semiconductor heater belong to the prior art. The temperature sensor is a thermocouple temperature measuring element or a thermal resistance temperature measuring element, and the temperature measuring precision is +/-0.2 ℃.
The semiconductor heater is made of semiconductor material, and the refrigerating/heating power of the semiconductor heater in the prior art is preferably 50-200W. After the temperature sensor detects ambient temperature, the temperature sensor transmits a signal to the start-stop device, then the start-stop device controls the semiconductor heater to work, the semiconductor heater correspondingly refrigerates or heats to achieve the aim of controlling temperature, the semiconductor heater can be controlled by adopting a power-on and power-off mode in the prior art, and the constant temperature control range is 25-27 ℃.
The semiconductor radiation temperature control crib can ensure that a baby can rest and grow in a heat and comfortable environment, and the environment temperature of the crib is controlled to be 25-27 ℃ by default; when the baby uses the baby crib, a quilt does not need to be covered and other warm-keeping articles do not need to be used, the contact with coarse textile fabrics is reduced, the clothes are prevented from being overstaffed, a larger stretching space is provided for the baby crib, and the development of bones is facilitated; meanwhile, the utility model adopts a semiconductor heater and a non-contact radiation temperature control mode, so that the safety and the comfort level are high; and the utility model discloses a personalized constant temperature mode only controls the temperature to the crib environment, need not carry out whole accuse temperature to all the other room parts, has energy-conserving effect.
The above embodiments are preferred embodiments of the present invention, but the embodiments of the present invention are not limited to the above embodiments, and any other changes, modifications, substitutions, combinations, and simplifications which do not depart from the spirit and principle of the present invention should be equivalent replacement modes, and all are included in the scope of the present invention.

Claims (9)

1. A semiconductor radiation temperature control crib is characterized in that: comprises a bedstead and a phase change radiation plate fixed on the upper end of the bedstead; the phase change radiation plate comprises a wrapping layer, and a heat insulation plate, a semiconductor heater and a shaping phase change material layer which are sequentially arranged from top to bottom; the wrapping layer wraps the heat-insulation plate, the semiconductor heater and the shaping phase-change material layer;
the phase change temperature of the shaping phase change material layer is 15-35 ℃, the insulation board is made of polyurethane, polystyrene or aerogel, and the thickness of the insulation board is 1-5 cm.
2. The semiconductor radiation temperature-controlled crib according to claim 1, characterized in that: the bed frame comprises a bed board and four support rods which are respectively fixed at four corners of the bed board, the upper ends of the four support rods are parallel and level, and the phase change radiation plate is fixed at the upper ends of the support rods.
3. The semiconductor radiation temperature-controlled crib according to claim 2, characterized in that: the bed board is equipped with the guardrail all around, and the guardrail comprises a horizon bar and many vertical poles, and many vertical poles arrange in proper order along the axial direction of horizon bar, and the upper end and the horizon bar of vertical pole are fixed mutually, and the lower extreme of vertical pole is fixed on the bed board, and the both ends of horizon bar are fixed respectively on two adjacent bracing pieces.
4. A semiconductor radiation temperature controlled crib as claimed in claim 3, wherein: a mattress is laid on the bed board and is made of cotton or cotton blended fabric.
5. The semiconductor radiation temperature-controlled crib according to claim 2, characterized in that: the support rod is made of metal, plastic or wood, the diameter of the support rod is 2-5 cm, the support rod is solid or hollow, and the height of the support rod is 50-100 cm.
6. A semiconductor radiation temperature controlled crib as claimed in claim 3, wherein: the diameters of the horizontal rods and the vertical rods are 0.5-5 cm, the horizontal rods and the vertical rods are made of metal, plastic or wood, and the distance between every two adjacent vertical rods is 5-10 cm.
7. The semiconductor radiation temperature-controlled crib according to claim 2, characterized in that: the crib still includes the temperature sensor of fixing in one of them corner of bed board, and the phase transition radiant panel still includes opens and stops the ware, and the temperature sensor opens and stops ware signal connection, opens and stops ware and semiconductor heater signal connection.
8. The semiconductor radiation temperature-controlled crib according to claim 7, characterized in that: the temperature sensor is a thermocouple temperature measuring element or a thermal resistance temperature measuring element, and the temperature measuring precision is +/-0.2 ℃.
9. The semiconductor radiation temperature-controlled crib according to claim 2, characterized in that: the distance between the lower surface of the wrapping layer and the bed board is 30-60 cm.
CN201821442603.7U 2018-09-04 2018-09-04 Semiconductor radiation temperature control crib Active CN209807784U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201821442603.7U CN209807784U (en) 2018-09-04 2018-09-04 Semiconductor radiation temperature control crib

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201821442603.7U CN209807784U (en) 2018-09-04 2018-09-04 Semiconductor radiation temperature control crib

Publications (1)

Publication Number Publication Date
CN209807784U true CN209807784U (en) 2019-12-20

Family

ID=68868122

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201821442603.7U Active CN209807784U (en) 2018-09-04 2018-09-04 Semiconductor radiation temperature control crib

Country Status (1)

Country Link
CN (1) CN209807784U (en)

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