CN209805664U - Power-driven phase inverter and low-end-to-high-end driving circuit - Google Patents
Power-driven phase inverter and low-end-to-high-end driving circuit Download PDFInfo
- Publication number
- CN209805664U CN209805664U CN201920596493.8U CN201920596493U CN209805664U CN 209805664 U CN209805664 U CN 209805664U CN 201920596493 U CN201920596493 U CN 201920596493U CN 209805664 U CN209805664 U CN 209805664U
- Authority
- CN
- China
- Prior art keywords
- power
- resistor
- output
- circuit
- switch
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn - After Issue
Links
- 230000003750 conditioning effect Effects 0.000 claims abstract description 30
- 230000008901 benefit Effects 0.000 abstract description 5
- 230000006872 improvement Effects 0.000 abstract description 2
- 238000009434 installation Methods 0.000 abstract description 2
- 238000012857 repacking Methods 0.000 abstract description 2
- 238000010586 diagram Methods 0.000 description 7
- 239000003990 capacitor Substances 0.000 description 4
- 230000009466 transformation Effects 0.000 description 3
- 230000009471 action Effects 0.000 description 1
- 230000032683 aging Effects 0.000 description 1
- 230000020169 heat generation Effects 0.000 description 1
- 238000010438 heat treatment Methods 0.000 description 1
- 230000001939 inductive effect Effects 0.000 description 1
- 230000001788 irregular Effects 0.000 description 1
- 238000011084 recovery Methods 0.000 description 1
- 230000004044 response Effects 0.000 description 1
- 238000012216 screening Methods 0.000 description 1
- 230000000087 stabilizing effect Effects 0.000 description 1
- 238000006467 substitution reaction Methods 0.000 description 1
- 238000000844 transformation Methods 0.000 description 1
Landscapes
- Inverter Devices (AREA)
Abstract
the utility model discloses a power drive phase inverter and low side drive change high-end drive circuit, wherein power drive phase inverter, including the input, the one end of dummy load is connected to the input, and the other termination mains voltage end of dummy load, signal conditioning circuit's input is still connected to the input, and signal conditioning circuit's output termination output drive circuit's input, output drive circuit's output connect power switch's input, power switch connects mains voltage end. This scheme has designed a principle simply, the structure is simplified, easily realize and the power drive phase inverter of installation, created the advantage for the low side drive converts high-end drive into, can be under the unchangeable prerequisite of controlgear's control signal, switch low side driven control circuit into high-end driven control circuit, greatly reduced walks the complexity of line, very big flexibility has been brought for whole circuit system's design, very big improvement whole circuit structure's security, the cost of repacking has been reduced.
Description
Technical Field
The utility model belongs to the technical field of electric and specifically relates to power drive phase inverter and low side drive changes high-end drive circuit.
Background
In the control circuit of various electrical devices, it is often designed as low-end driving because such a circuit structure is easy to implement, but it is required that an electrical system configured with the control device is designed as shown in fig. 1, that is, one end of a load (electrical device) is connected to a power supply, the other end of the load is connected to a switch tube of the control device, the switch tube is connected to a ground terminal, and the on-off state of the switch tube is controlled by a control signal so as to control the on-off state of the switch tube and the ground terminal to control whether the load is powered on or not.
such a circuit structure has a disadvantage that when the load is not in operation, the load is charged, and electrical aging or operator negligence often causes short-circuit accidents, and particularly, the situation that a large number of electric devices are used is more difficult to grasp; on the other hand, both ends of the load are wired to different places, and the wiring layout is complicated.
in contrast, in the high-side driving circuit structure, one end of the load is connected with the switching tube, and the other end of the load is directly grounded, so that under normal conditions, when no control signal is available, the switching tube is not conducted, no current flows through the load, and the load is in a power-off state; on the contrary, if the control signal is valid, the switch tube is turned on, so that the current flows from the positive end of the power supply through the high-end switch tube and then flows out through the load, and the load enters the power-on state, thereby generating a response action.
Therefore, changing various control circuits that already adopt low-side driving into high-side driving to solve the disadvantages of low-side driving becomes an urgent problem to be solved, but because various control circuits of low-side driving have many power-consuming parts and complex circuit structures, when changing to high-side driving, the whole circuit structure is usually redesigned to implement, which increases the difficulty and cost of implementation;
And because the level between the control end and the output end of the switch tube has higher requirement when the switch tube works normally, the level of the control end is required to be higher than the level of the output end by 5-20V, when the output end of the switch tube is grounded, only the voltage is applied to the control end, and when the switch tube is connected with a power supply, the control end can be driven by the voltage which is higher than the voltage of the power supply by 5-20V, therefore, the difference between the control signal of the switch tube controlled by the low end and the control signal of the switch tube controlled by the high end further limits the control signal of the control equipment adopting the low end to realize the high end driving.
SUMMERY OF THE UTILITY MODEL
The present invention is directed to solve the above problems in the prior art, and provides a power-driven phase inverter and a low-side driving-to-high-side driving circuit.
The power driving phase inverter comprises an input end, wherein the input end is connected with one end of a dummy load, the other end of the dummy load is connected with a power voltage end, the input end is also connected with the input end of a signal conditioning circuit, the output end of the signal conditioning circuit is connected with the input end of an output driving circuit, the output end of the output driving circuit is connected with the input end of a power switch, and the power switch is connected with the power voltage end and driven by a signal of the output driving circuit.
preferably, in the power-driven phase inverter, the dummy load is a resistor having a resistance of 10K Ω ± 1K Ω.
preferably, in the power-driven inverter apparatus, the signal conditioning circuit is a hysteresis comparator circuit with an adjustable comparison point.
Preferably, the power-driven phase inverter includes a fifth resistor connected to the input terminal, another terminal of the fifth resistor is connected to the positive input terminal of the operational amplifier and is matched with a grounded fourth resistor to divide the voltage of the input signal, the reverse input terminal of the operational amplifier is connected to one terminals of a third resistor and a tenth resistor, another terminal of the tenth resistor is grounded, and another terminal of the third resistor is connected to the power supply voltage terminal; and the output end of the operational amplifier is connected with a second resistor and a ninth resistor which control the return difference range of the operational amplifier.
Preferably, in the power-driven phase inverter, the power switch is a MOSFET or a high-side intelligent switch having an on-resistance of 10-200 milliohms.
Preferably, in the power-driven phase inverter, the power switch is a high-side intelligent switch, the output driver circuit includes a sixth resistor connected to the output terminal of the signal conditioner circuit, and the sixth resistor is connected in series with an eighth resistor connected to ground and divides the voltage of the output signal of the signal conditioner circuit to obtain a voltage range value for controlling the switching state of the high-side intelligent switch, and then outputs the voltage range value to the high-side intelligent switch.
Preferably, in the power-driven phase inverter, the power switch is a dual-path high-end intelligent output switch, which includes two paths of switches connected in parallel, a power end of the dual-path high-end intelligent output switch is connected to a power supply, a ground end of the dual-path high-end intelligent output switch is connected to ground, two output ends of the dual-path high-end intelligent output switch are connected to cathodes of a first diode and a second diode connected in parallel, and anodes of the first diode and the second diode are connected to ground.
Preferably, in the power-driven inverter, the power switch is a P-type MOSFET, the output driver includes a twelfth resistor connected to the signal conditioner, the twelfth resistor is connected to a base of a switching tube, a collector of the switching tube is grounded, an emitter of the switching tube is connected to one end of an eleventh resistor, the other end of the eleventh resistor is connected to a cathode of a regulator tube and a gate of the P-type MOSFET, an anode of the regulator tube is connected to a power supply and a drain of the P-type MOSFET, and a source of the P-type MOSFET is connected to an output terminal.
Preferably, in the power-driven phase inverter, the power switch is an N-type MOSFET, the output driver includes a boost circuit connected to the output of the signal conditioner and one end of an eighteenth resistor, the output of the boost circuit and the other end of the eighteenth resistor are both connected to the input of the interlock-type switch circuit, the output of the interlock-type switch circuit is connected to the gate of the N-type MOSFET, the drain of the N-type MOSFET is connected to the power voltage terminal, the power voltage terminal is connected to the gate of the N-type MOSFET through a seventeenth resistor, and the source of the N-type MOSFET is connected to the output.
The low-side drive to high-side drive circuit comprises control equipment and an electrical system comprising a power supply and a load, wherein the control equipment is connected with the electrical system through the power drive phase inverter, and the power drive phase inverter switches the control equipment and the low-side drive circuit of the electrical system into the high-side drive circuit.
The utility model discloses technical scheme's advantage mainly embodies:
This scheme design is exquisite, it is simple through designing a circuit principle, the structure is simplified, easily realize the power drive phase inverter with the installation, the advantage has been created for the low side drive converts high-end drive into, as long as connect it between existing controlgear and electrical system and finely tune circuit structure can be under the unchangeable prerequisite of controlgear's control signal, switch low side driven control circuit into high-end driven control circuit, greatly reduced walk the degree of complexity of line and the degree of difficulty of realization, very big flexibility has been brought for whole circuit system's design, and very big improvement whole circuit structure's security, the cost of repacking has been reduced.
By screening the main elements of the circuit in the phase inverter, the power consumption of the circuit can be effectively reduced, the heat generation of the circuit can be reduced, and the safety and the low cost of the operation of the circuit are ensured.
The phase inverter has multiple implementation forms, can select an optimal circuit structure according to different application occasions, and has the advantages of wide application range, good flexibility and convenient popularization and application.
Drawings
FIG. 1 is a schematic diagram of a control circuit for low side drive as described in the background;
Fig. 2 is a circuit diagram of a low-side to high-side driving circuit according to the present invention;
fig. 3 is a schematic diagram of the inverter of the present invention (P + is a power supply voltage in the drawing);
FIG. 4 is a schematic diagram of the dummy load and signal conditioning circuit of the present invention (P + is the supply voltage in the figure);
Fig. 5 is a schematic diagram of the power switch of the present invention being a high-end intelligent switch and its output driving circuit (P + in the drawing is power voltage);
fig. 6 is a schematic diagram of the power switch of the present invention being a P-type MOSFET and its output driving circuit (P + is the power voltage in the drawing);
Fig. 7 is a schematic diagram of the power switch of the present invention being an N-type MOSFET and its output driving circuit (P + is the power voltage in the drawing).
Detailed Description
Objects, advantages and features of the present invention will be illustrated and explained by the following non-limiting description of preferred embodiments. These embodiments are merely exemplary embodiments for applying the technical solutions of the present invention, and all technical solutions formed by adopting equivalent substitutions or equivalent transformations fall within the scope of the present invention.
In the description of the embodiments, it should be noted that the terms "center", "upper", "lower", "left", "right", "front", "rear", "vertical", "horizontal", "inner", "outer", and the like indicate orientations or positional relationships based on the orientations or positional relationships shown in the drawings, and are only for convenience of description and simplicity of description, but do not indicate or imply that the devices or elements referred to must have a specific orientation, be constructed in a specific orientation, and be operated, and thus, should not be construed as limiting the present invention. Furthermore, the terms "first," "second," and "third" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance. In the description of the embodiment, the operator is used as a reference, and the direction close to the operator is a proximal end, and the direction away from the operator is a distal end.
The low-end driving to high-end driving circuit disclosed in the present invention is described below with reference to the accompanying drawings, as shown in fig. 2, the low-end driving to high-end driving circuit includes a control device 10 and an electrical system 20, the control device 10 includes a switch tube 101 and a control unit (not shown in the drawings) for sending a control signal to the switch tube, the electrical system 20 includes a power supply 201, a load 202 (which may be various electric devices), and a grounded casing 203, in the low-end driving circuit structure shown in fig. 1, one end of the load is connected to an anode of the power supply, the other end of the load is connected to a drain of the switch tube of the control device, a source of the switch tube and a cathode of the power supply are both connected to a rack, and a gate of the switch tube is connected to the control unit, and at this time, whether.
When the low-side driving is switched to the high-side driving, as shown in fig. 2, in this embodiment, a power-driven inverter 30 is connected between the control device 10 and the electrical system 20, so that the control device 10 and the low-side driving circuit of the electrical system 20 can be switched to the high-side driving circuit through the power-driven inverter 30, mainly one end of a load 201 is adjusted to be connected with an output end of the power-driven inverter 30, the other end is connected to the frame 203, the power-driven inverter 30 is connected to a positive electrode of a power supply 201 and a signal output end of a switching tube 101, and the electrical system 20 is connected to the control device 10 through a set of power lines to supply power to the control device 10.
Specifically, as shown in fig. 2 to fig. 4, the drain of the switching tube 101 of the control device 10 is connected to the input terminal 1 of the power-driven phase inverter, the input terminal 1 is connected to one end of a dummy load 2, the other end of the dummy load 2 is connected to a power voltage terminal P + (positive pole of a power supply 202), the input terminal 1 is further connected to an input terminal of a signal conditioning circuit 3, an output terminal of the signal conditioning circuit 3 is connected to an input terminal of an output driving circuit 4, an output terminal of the output driving circuit 4 is connected to an input terminal of a power switch 5, the power switch 5 is connected to the power voltage terminal P + (positive pole of the power supply 202) and is driven by a signal of the output driving circuit 4, and an output terminal of the power switch 5 is connected to one end of the load 201.
The dummy load 2 is provided for the control device 10 at the front end, the input signal of the control device 10 is converted into the input of the signal conditioning circuit 3, the signal conditioning circuit 3 shapes the input signal to become a standard full-amplitude square wave signal from the power supply to the ground for the output driving circuit 4 at the later stage, the output driving circuit 4 controls the switch of the power switch 5, so that the final driving load 201 is obtained, at this time, the load 201 is connected with the power supply 202 through the power driving phase inversion device 30 and is not directly connected, and the driving of the load 201 is switched from the original control of the ground terminal to the control of the power supply terminal.
The dummy load 2 is much larger in impedance than the electric equipment (load 201), and preferably is a resistor R7 with the resistance value of 10K Ω +/-1K Ω, so that the power consumption is extremely low, and the situation of too much heat is avoided; on the other hand, since the dummy load 2 has a large impedance, the waveform of the signal input to the signal conditioning circuit is unlikely to be a full-amplitude signal from the power supply to the ground, and is generally a triangular wave or an irregular trapezoidal wave, and therefore the signal needs to be shaped by the signal conditioning circuit.
The signal conditioning circuit 3 is preferably a hysteresis comparator circuit with an adjustable comparison point, and specifically, as shown in fig. 4, the hysteresis comparator circuit includes a fifth resistor R5 connected to the input terminal input1, the other end of the fifth resistor R5 is connected to the forward input terminal of the operational amplifier U2A and one end of a fourth resistor R4, the other end of the fourth resistor R4 is grounded GND, the reverse input terminal of the operational amplifier U2A is connected to one end of a third resistor R3 and one end of a tenth resistor R10, the other end of the tenth resistor R10 is grounded, and the other end of the third resistor R3 is connected to the power supply voltage terminal P +; the output end of the operational amplifier U2A is connected to one end of a second resistor R2 and one end of a ninth resistor R9, the other end of the second resistor R2 is grounded GND through a first resistor R1, and the other end of the ninth resistor is connected to the inverting input end of the operational amplifier U2A.
The second resistor R2, the third resistor R3, the fourth resistor R4, the fifth resistor R5, the ninth resistor R9 and the tenth resistor R10 form a hysteresis comparator together with the operational amplifier U2 to serve as a signal conditioning circuit. The fourth resistor R4 and the fifth resistor R5 divide the voltage of the input signal to make the signal fit the input range of the operational amplifier U2; the third resistor R3 and the tenth resistor R10 divide the input voltage of the power supply voltage end P + so as to adjust the comparison point of the hysteresis comparator; the second resistor R2 and the ninth resistor R9 control the return difference range of the hysteresis comparator.
In order to reduce the heating value of the module, the power switch 5 selects a MosFET device (N type or P type) or a high-end intelligent switch with the on-resistance of 10-200 milliohm level; the output driving circuit 4 converts the output of the conditioning circuit into an 'on-off' voltage range required for turning on-off the power switch 5 according to the device requirements of the power switch 5.
As shown in fig. 5, when the power switch 5 is a high-side intelligent switch, the output driving circuit 4 includes a sixth resistor R6 connected to the output terminal of the signal conditioning circuit 3, the sixth resistor R6 is connected in series with an eighth resistor R8 connected to ground, and divides the voltage of the output signal of the signal conditioning circuit to obtain the voltage range value of the on or off of the high-side intelligent switch U2, and then outputs the voltage range value to the high-side intelligent switch U2; when the voltage range output by the output drive circuit 4 is from +4V to +5V, the high-side intelligent switch U2 is turned on, and when the voltage range output by the output drive circuit 4 is from 0V to +1V, the high-side intelligent switch U2 is turned off.
Further, as shown in fig. 5, the power switch 5 is a two-way high-end intelligent output switch, which includes two parallel switches, so as to increase the driving capability of the load 201; the power supply end (Vbb end) of the dual-path high-end intelligent output switch U2 is connected with a power supply voltage end P +, the grounding end is grounded through a diode D3, two output ends are connected with the cathodes of a first diode D1 and a second diode D2 which are connected in parallel, the anodes of the first diode D1 and the second diode D2 are grounded GND, and the first diode D1 and the second diode D2 are used as output protection and fast recovery diodes which are used as a follow current channel of inductive load current when the switch is turned off on one hand and used as a power supply to protect the output switch when the power supply is reversely connected on the other hand.
As shown in fig. 6, when the power switch 5 is a P-type MOSFET, the output driving circuit 4 includes a twelfth resistor R12 connected to the output terminal of the signal conditioning circuit 3, the twelfth resistor R12 is connected to the base of a switch tube Q3, the collector of the switch tube Q3 is grounded GND, the emitter of the switch tube Q3 is connected to one end of an eleventh resistor R11, the other end of the eleventh resistor R11 is connected to the cathode of a regulator tube V4 and the gate of the P-type MOSFET, the regulator tube V4 is a 4.7-15V regulator tube, preferably a 7.5V regulator tube, the anode of the regulator tube V4 is connected to a power voltage terminal P + and the drain of the P-type MOSFET, and the source of the P-type MOSFET is connected to the output terminal output.
When the voltage range output by the output drive circuit 4 is from P +15V to P + -4.5V, the P-type MOSFET Q2 is turned on, and when the voltage range output by the output drive circuit 4 is from P + -1V to P +, the P-type MOSFET Q2 is turned off.
in this embodiment, when the output driving circuit 4 specifically works, the control signal from the signal conditioning circuit 3 controls the on/off of the switching tube Q3 through the twelfth resistor R12, when the input signal is low, the switching tube Q3 is turned on, the voltage regulator tube D4 and the eleventh resistor R11 form a divided voltage, the voltage of the G pole (gate pole) of the P-type mosfet Q2 is P + -7.5V, and the P-type mosfet Q2 is turned on; when the input signal is high, the switching tube Q3 is turned off, the voltage regulator tube D4 and the eleventh resistor R11 do not form a divided voltage, the G-pole voltage of the P-type mosfet Q2 is P +, and the P-type mosfet Q2 is turned off.
As shown in fig. 7, when the power switch is an N-type MOSFET, the output driving circuit 4 includes a boost circuit connected to the output terminal of the signal conditioning circuit and one end of an eighteenth resistor R18, the output terminal of the boost circuit and the other end of the eighteenth resistor R18 are both connected to the input terminal of an interlock type switch circuit, the output terminal of the interlock type switch circuit is connected to the gate of the N-type MOSFET q1, the drain of the N-type MOSFET q1 is connected to a power supply voltage terminal, the power supply voltage terminal is connected to the gate of the N-type MOSFET q1 through a seventeenth resistor R17, and the source of the N-type MOSFET q1 is connected to the output terminal.
As shown in fig. 7, the voltage boost circuit 41 includes a capacitor C3 and a fourteenth resistor R14 connected in parallel to the output terminal of the signal conditioning circuit 3, the other end of the capacitor C3 is grounded and connected to the gate of the MOS transistor N1 through a fifteenth resistor R15, the other end of the fourteenth resistor R14 is connected with one end of an inductor L1, the other end of the inductor L1 is connected with the drain of a MOS transistor N1 and one end of a capacitor C1, the source of the MOS transistor N1 is grounded, the other end of the capacitor C1 is connected with the connecting line of two diodes D5 and D7 which are connected in series, the anode of the diode D7 is connected with the power voltage end P + and the ground end GND, the cathode of the diode D5 is connected with the interlocking type switch circuit, the power supply voltage terminal P + is also connected to the anode of the zener diode D6 and one end of the thirteenth resistor R13, the cathode of the voltage stabilizing diode D6 and the other end of the thirteenth resistor R13 are connected with the interlocking type switch circuit.
As shown in fig. 7, the interlock type switch circuit 42 includes a first transistor Q4 and a second transistor Q5, the base of the second transistor Q5 is connected to the eighteenth resistor R18, the emitter of the second transistor Q5 is grounded, the collector of the second transistor Q5 is connected to the base of the first transistor Q4, the base of the first transistor Q4 is further connected to the output terminal of the voltage boost circuit through a sixteenth resistor R16, the collector of the first transistor Q4 is connected to the output terminal of the voltage boost circuit, and the emitter of the first transistor Q4 is connected to the gate of the N-type MOSFET.
In this embodiment, when the voltage range output by the output driving circuit 4 is P + +4.5V to P + +15V, the N-type MOSFET is turned on; when the voltage range output by the output driving circuit 4 is less than or equal to (less than or equal to) P + +1V, the N-type MOSFET Q1 is turned off.
In detail, in this embodiment, when the output driving circuit 4 works specifically, the control signal from the signal conditioning circuit 3 is divided into two paths, and one path of the control signal is boosted to P + +7.5V through the voltage boost circuit; the other circuit controls the on-off of a second triode Q5 through an eighteenth resistor R18, and further controls the on-off of a first triode Q4.
When the input signal is high, the second triode Q5 is turned on, the base voltage of the first triode Q4 is low, the first triode Q4 is turned off, the voltage of the power supply voltage terminal P + is applied to the G pole of the N-type mosfet Q1 through the seventeenth resistor R17, and the N-type mosfet Q1 is turned off;
When the input signal is low, the second triode Q5 is turned off, the base voltage of the first triode Q4 is high, the first triode Q4 is turned on, the boosting voltage P + +7.5V is applied to the G pole of the N-type mosfet Q1 through the first triode Q4, and the N-type mosfet Q1 is turned on to output.
The utility model has a plurality of implementation modes, and all technical schemes formed by adopting equivalent transformation or equivalent transformation all fall within the protection scope of the utility model.
Claims (10)
1. A power-driven inverter apparatus, characterized by: including input (1), the one end of dummy load (2) is connected in input (1), another termination mains voltage end of dummy load (2), the input of signal conditioning circuit (3) is still connected in input (1), the output termination of signal conditioning circuit (3) exports the input of drive circuit (4), the input of power switch (5) is connected to the output of export drive circuit (4), power switch (5) are connected mains voltage end and by the signal drive switch of export drive circuit (4).
2. The power-driven phase inverter apparatus according to claim 1, wherein: the dummy load is a resistor with the resistance value of 10K omega +/-1K omega.
3. The power-driven phase inverter apparatus according to claim 1, wherein: the signal conditioning circuit is a hysteresis comparator circuit with adjustable comparison point.
4. The power-driven phase inverter apparatus according to claim 1, wherein: the amplifier comprises a fifth resistor (R5) connected with an input end, the other end of the fifth resistor (R5) is connected with a forward input end of an amplifier (U2A) and is matched with a grounded fourth resistor (R4) to divide an input signal, the reverse input end of the amplifier (U2A) is connected with one ends of a third resistor (R3) and a tenth resistor (R10), the other end of the tenth resistor (R10) is grounded, and the other end of the third resistor (R3) is connected with a power supply voltage end; the output end of the operational amplifier (U2A) is connected with a second resistor (R2) and a ninth resistor (R9) which control the return difference range of the operational amplifier.
5. the power-driven phase inverter apparatus according to claim 1, wherein: the power switch (5) is a MOSFET or high-end intelligent switch with the on-resistance of 10-200 milliohms.
6. The power-driven phase inverter apparatus according to any one of claims 1 to 5, wherein: the power switch (5) is a high-end intelligent switch, the output driving circuit comprises a sixth resistor (R6) connected with the output end of the signal conditioning circuit, and the sixth resistor (R6) is connected with an eighth resistor (R8) which is grounded in series and outputs the output signal of the signal conditioning circuit to the high-end intelligent switch after the voltage division is carried out on the output signal of the signal conditioning circuit to obtain a voltage range value for controlling the switching state of the high-end intelligent switch.
7. The power-driven phase inverter as claimed in claim 6, wherein: power switch (5) are two-way high-end intelligence output switch, and it includes the parallelly connected switch of two ways, two-way high-end intelligence output switch's power end power, earthing terminal ground connection, and the negative pole of parallelly connected first diode (D1) and second diode (D2) is all connected to two output, the positive pole ground connection of first diode and second diode.
8. The power-driven phase inverter apparatus according to any one of claims 1 to 5, wherein: the power switch is a P-type MOSFET, the output driving circuit comprises a twelfth resistor (R12) connected with the signal conditioning circuit, the twelfth resistor (R12) is connected with the base electrode of a switch tube (Q3), the collector electrode of the switch tube (Q3) is grounded, the emitter electrode of the switch tube is connected with one end of an eleventh resistor (R11), the other end of the eleventh resistor (R11) is connected with the cathode of a voltage regulator tube (V4) and the gate electrode of the P-type MOSFET, the anode of the voltage regulator tube (V4) is connected with a power supply and the drain electrode of the P-type MOSFET, and the source electrode of the P-type MOSFET is connected with an output end (output).
9. The power-driven phase inverter apparatus according to any one of claims 1 to 5, wherein: the power switch (5) is an N-type MOSFET, the output drive circuit (4) comprises a booster circuit (41) and an eighteenth resistor (R18) which are connected with the output end of the signal conditioning circuit, the output end of the booster circuit and the other end of the eighteenth resistor (R18) are connected with the input end of an interlocking switch circuit (42), the output end of the interlocking switch circuit is connected with a gate pole of the N-type MOSFET, the drain electrode of the N-type MOSFET is connected with a power supply voltage end, the power supply voltage end is connected with the gate pole of the N-type MOSFET through a seventeenth resistor (R17), and the source electrode of the N-type MOSFET is connected with the output end.
10. A low-end drive-to-high-end drive circuit comprises a control device (10) and an electrical system (20) comprising a power supply and a load, and is characterized in that: the control device (10) is connected to the electrical system (20) by means of a power driven inverter arrangement (30) according to any of claims 1-9, the power driven inverter arrangement (30) switching the control device (10) and the low side driver circuit of the electrical system (20) to a high side driver circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920596493.8U CN209805664U (en) | 2019-04-28 | 2019-04-28 | Power-driven phase inverter and low-end-to-high-end driving circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920596493.8U CN209805664U (en) | 2019-04-28 | 2019-04-28 | Power-driven phase inverter and low-end-to-high-end driving circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209805664U true CN209805664U (en) | 2019-12-17 |
Family
ID=68831383
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201920596493.8U Withdrawn - After Issue CN209805664U (en) | 2019-04-28 | 2019-04-28 | Power-driven phase inverter and low-end-to-high-end driving circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN209805664U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110011523A (en) * | 2019-04-28 | 2019-07-12 | 苏州蓝博控制技术有限公司 | Power drive inverting means and low side driving turn high-end drive circuit |
-
2019
- 2019-04-28 CN CN201920596493.8U patent/CN209805664U/en not_active Withdrawn - After Issue
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110011523A (en) * | 2019-04-28 | 2019-07-12 | 苏州蓝博控制技术有限公司 | Power drive inverting means and low side driving turn high-end drive circuit |
| CN110011523B (en) * | 2019-04-28 | 2023-12-29 | 苏州蓝博控制技术有限公司 | Power driving phase inverter and low-end driving to high-end driving circuit |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US10819228B2 (en) | Charge pump capacitor coupled to input, reference voltage for overvoltage | |
| KR101730636B1 (en) | Bidirectional non-isolation dc-dc converter with improved in stability | |
| KR20100120151A (en) | Buck converter and method for providing a current for at least one led | |
| CN1147881A (en) | Load driving device | |
| CN111725857B (en) | Switch drive circuit and battery control circuit | |
| CN102904329A (en) | Power supply management circuit | |
| CN209805664U (en) | Power-driven phase inverter and low-end-to-high-end driving circuit | |
| JP2014030108A (en) | Power control device, storage battery and power control system | |
| CN102710915A (en) | LNB (Low Noise Block) power supply control circuit | |
| CN110011523B (en) | Power driving phase inverter and low-end driving to high-end driving circuit | |
| CN102035381B (en) | BOOST circuit with adjusting starting voltage | |
| CN113067468A (en) | Integrated reverse connection prevention and high-side switch circuit and controller | |
| CN101656506A (en) | Motor driving system | |
| CN111130321A (en) | Single-power-supply negative-voltage power switch tube driving circuit | |
| CN102651926B (en) | Auxiliary source circuit | |
| US8954234B2 (en) | Electric power steering system | |
| CN104518689B (en) | Zero current circuit for detecting and direct current transducer | |
| CN113472048A (en) | Startup and shutdown control system and switching power supply system | |
| CN103220857B (en) | A kind of LED constant-current control circuit | |
| CN109552398B (en) | Control device and system of rear wheel follow-up steering system and vehicle | |
| CN210007637U (en) | driving circuit of DC electric equipment | |
| CN219802301U (en) | Drive protection circuit and electrical equipment | |
| CN220673963U (en) | Driving circuit and electromagnetic heating device | |
| CN109347465B (en) | Switching tube driving circuit, turn-off device and distributed power generation system | |
| CN214661008U (en) | Fan drive circuit and fan |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20191217 Effective date of abandoning: 20231229 |
|
| AV01 | Patent right actively abandoned |
Granted publication date: 20191217 Effective date of abandoning: 20231229 |