CN209804678U - Novel photovoltaic module capable of resisting hot spot effect - Google Patents
Novel photovoltaic module capable of resisting hot spot effect Download PDFInfo
- Publication number
- CN209804678U CN209804678U CN201920850955.4U CN201920850955U CN209804678U CN 209804678 U CN209804678 U CN 209804678U CN 201920850955 U CN201920850955 U CN 201920850955U CN 209804678 U CN209804678 U CN 209804678U
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- photovoltaic module
- cell
- diode
- battery
- bypass diode
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- 230000000694 effects Effects 0.000 title claims abstract description 10
- 210000004027 cell Anatomy 0.000 description 35
- 210000002858 crystal cell Anatomy 0.000 description 5
- 238000012986 modification Methods 0.000 description 5
- 230000004048 modification Effects 0.000 description 5
- 238000010586 diagram Methods 0.000 description 4
- 230000000712 assembly Effects 0.000 description 3
- 238000000429 assembly Methods 0.000 description 3
- 238000005520 cutting process Methods 0.000 description 3
- 238000005286 illumination Methods 0.000 description 3
- 238000007792 addition Methods 0.000 description 2
- 239000013078 crystal Substances 0.000 description 2
- 238000000034 method Methods 0.000 description 2
- 238000010248 power generation Methods 0.000 description 2
- 230000032683 aging Effects 0.000 description 1
- 230000018109 developmental process Effects 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000004519 manufacturing process Methods 0.000 description 1
- 238000002844 melting Methods 0.000 description 1
- 230000008018 melting Effects 0.000 description 1
- 238000013021 overheating Methods 0.000 description 1
- 239000005022 packaging material Substances 0.000 description 1
- 238000004806 packaging method and process Methods 0.000 description 1
- 238000003466 welding Methods 0.000 description 1
Classifications
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
Landscapes
- Photovoltaic Devices (AREA)
Abstract
The patent provides a novel photovoltaic module with hot spot effect resistance, which is characterized in that a bypass diode is reversely connected between the anode and the cathode of each solar cell in the photovoltaic module, the anode of the bypass diode is connected with the cathode of the cell, and the cathode of the bypass diode is connected with the anode of the cell; the connection position of the bypass diode is set at any one of four chamfered positions of the battery. When a battery is shielded, the diode between the anode and the cathode of the battery is conducted, and other batteries which are not shielded still work, so that the assembly has higher output power and generated energy under the same shielding environment.
Description
Technical Field
the utility model relates to a solar cell photovoltaic module, especially photovoltaic module field of hot spot effect resistance.
background
With the increasing shortage of energy supply in the global world, the development of new energy has become an important energy strategy in each country. Solar energy is receiving increasing attention because of its relative availability. In recent years, the solar photovoltaic industry is developed more quickly, and the safety performance and reliability of the photovoltaic module are paid more and more attention and attention by people in the photovoltaic industry.
The solar cells are connected and packaged in different series and parallel connection modes to form the photovoltaic module with certain voltage and current output. The hot spot effect of the photovoltaic module refers to the phenomenon that in a serial solar cell branch circuit under a certain condition, a shielded solar cell can be used as a load, electric energy generated by other solar cells receiving illumination is consumed, and the shielded solar cell generates heat.
The shaded solar cells may consume some or all of the energy generated by the solar cells receiving the illumination, thereby reducing the output power of the photovoltaic module. The serious hot spot phenomenon can cause permanent damage such as local burning of the solar cell, melting of welding spots, aging of packaging materials and the like, and even cause the whole photovoltaic module to be scrapped or a serious fire.
In order to prevent the hot spot effect, the conventional photovoltaic module connects a bypass diode in parallel to the solar cell of each serial branch, so as to prevent the energy generated by the solar cell receiving light in the branch from being consumed by the shielded solar cell. Normally, the bypass diode is under reverse bias, and does not influence the normal operation of the photovoltaic module. When one battery is shielded, the other batteries are urged to be reversely biased into a large resistor, the diode is conducted at the moment, and the part of the total battery exceeding the photo-generated current of the shielded battery is shunted by the diode, so that the shielded battery is prevented from being damaged by overheating, and the energy generated by the illumination assembly is prevented from being consumed by the shielded assembly.
A conventional way to prevent the hot spot effect of a module is to arrange three diodes in one module, each diode protecting all solar cells of one series branch. Taking 60 battery packs as an example, one diode is connected in parallel at two ends of 20 series batteries, when one battery is shielded, the diode is conducted, at the moment, the 20 series batteries protected by the diode are in a short-circuit state and do not generate power, the pack only has 40 batteries of other two series branches to generate power, the output power of the whole photovoltaic pack is greatly influenced, and the power generation capacity of a system is influenced.
SUMMERY OF THE UTILITY MODEL
the main object of the present invention is to develop a novel photovoltaic module with hot spot effect, wherein a bypass diode is connected between the positive and negative electrodes of each solar cell in the photovoltaic module in the reverse direction, the positive electrode of the bypass diode is connected with the negative electrode of the battery, and the negative electrode of the bypass diode is connected with the positive electrode of the battery; the connection position of the bypass diode is set at any one of the four chamfered positions of the battery.
this patent provides a photovoltaic module of hot spot effect of neotype, this subassembly take place when sheltering from as a slice battery, and the diode between this battery positive negative pole can play, and other batteries that are not sheltered from are still in work for this subassembly can have higher output and generated energy under the same environment of sheltering from.
Drawings
FIG. 1 is a schematic view of a single crystal cell diode connection;
FIG. 2 is a schematic view of a portion of a single crystal cell diode connection;
FIG. 3 is a schematic view of a polycrystalline cell diode connection;
FIG. 4 is a schematic view of a portion of a diode connection for a polycrystalline cell;
FIG. 5 is a schematic layout of components;
FIG. 6 is a schematic view of a halved cell diode connection;
Figure 7 is a schematic diagram of a five-part cell diode connection.
Detailed Description
Examples
In order to make the aforementioned objects, features and advantages of the present invention comprehensible, embodiments accompanied with figures are described in detail below.
The solar cell used in the patent is a single crystal cell or a polycrystalline cell, most of the solar cells used in the industry at present are provided with four chamfers, the four chamfers of the solar cell are non-power generation regions, the chamfer position of the solar cell is utilized in the patent, a bypass diode is reversely connected between the anode and the cathode of the cell, fig. 1 shows that the bypass diode is connected at the chamfer position of the single crystal cell, fig. 2 shows a partial schematic diagram of diode connection on the single crystal cell on the basis of fig. 1, the anode of the diode is connected with the cathode of the cell, and the cathode of the diode is connected with the anode of the cell. FIG. 3 is a schematic view of a bypass diode connected to a chamfered portion of a polycrystalline cell, FIG. 4 is a partial schematic view of the diode connection, the anode of the diode being connected to the cathode of the cell and the cathode of the diode being connected to the anode of the cell, and for single crystal and polycrystalline cells, the diode connection may be at any one of the four chamfered portions of the cell.
According to the method, the batteries are packaged to form the assembly, after the assembly is manufactured, a diode which is connected in the reverse direction is connected between the positive electrode and the negative electrode of each battery in the assembly, and fig. 5 is a layout schematic diagram of a conventional assembly. Fig. 5 is a schematic diagram of a single crystal version 60 of the assembly.
This patent can have the composing form of multiple other subassemblies, uses the above-mentioned solar cell who is connected with the diode, and wherein the inside battery quantity of subassembly is unfixed, can be 60, 72 or other quantity, and the connected mode of the inside battery of subassembly can be for series connection, parallel connection or for connecting in series-parallel.
Furthermore, the solar cell in the patent can be cut into equally-divided cell pieces, the diodes which are reversely connected are connected between the positive electrode and the negative electrode of the cut cell, and the equally-divided mode can be halved cutting, trisected cutting, quintuple cutting and the like. And packaging the battery with the diode after being cut into equal parts to manufacture assemblies, such as half-chip assemblies cut into two equal parts or stack tile assemblies cut into five equal parts.
The foregoing is merely a preferred embodiment of the present invention, and is not intended to limit the present invention in any way and in any way, and it should be understood that modifications and additions may be made by those skilled in the art without departing from the method of the present invention, and such modifications and additions are also considered to be within the scope of the present invention. Those skilled in the art can make various changes, modifications and evolutions equivalent to those made by the above-disclosed technical content without departing from the spirit and scope of the present invention, and all such changes, modifications and evolutions are equivalent embodiments of the present invention; meanwhile, any changes, modifications and evolutions of equivalent changes to the above embodiments according to the actual technology of the present invention are also within the scope of the technical solution of the present invention.
Claims (1)
1. A novel photovoltaic module with hot spot effect resistance is characterized in that a bypass diode is reversely connected between the positive electrode and the negative electrode of each solar cell in the photovoltaic module, the positive electrode of the bypass diode is connected with the negative electrode of the cell, and the negative electrode of the bypass diode is connected with the positive electrode of the cell; the connection position of the bypass diode is set at any one of four chamfered positions of the battery.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920850955.4U CN209804678U (en) | 2019-06-06 | 2019-06-06 | Novel photovoltaic module capable of resisting hot spot effect |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920850955.4U CN209804678U (en) | 2019-06-06 | 2019-06-06 | Novel photovoltaic module capable of resisting hot spot effect |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209804678U true CN209804678U (en) | 2019-12-17 |
Family
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201920850955.4U Active CN209804678U (en) | 2019-06-06 | 2019-06-06 | Novel photovoltaic module capable of resisting hot spot effect |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN209804678U (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114141907A (en) * | 2021-11-23 | 2022-03-04 | 中国电子科技集团公司第十八研究所 | Sheet distribution method for battery array |
| CN114141893A (en) * | 2021-11-23 | 2022-03-04 | 中国电子科技集团公司第十八研究所 | Trapezoidal solar cell integrated array |
-
2019
- 2019-06-06 CN CN201920850955.4U patent/CN209804678U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN114141907A (en) * | 2021-11-23 | 2022-03-04 | 中国电子科技集团公司第十八研究所 | Sheet distribution method for battery array |
| CN114141893A (en) * | 2021-11-23 | 2022-03-04 | 中国电子科技集团公司第十八研究所 | Trapezoidal solar cell integrated array |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20201029 Address after: 710099 589 East Chang'an Street, Xi'an Space Base, Shaanxi Province Patentee after: STATE POWER INVESTMENT CORPORATION XI'AN SOLAR POWER Co.,Ltd. Patentee after: Huanghe hydropower Xining Solar Power Co.,Ltd. Patentee after: HUANGHE HYDROPOWER DEVELOPMENT Co.,Ltd. Patentee after: Huanghe Hydropower Development Co., Ltd. Address before: 710099 589 East Chang'an Street, Xi'an Space Base, Shaanxi Province Patentee before: STATE POWER INVESTMENT CORPORATION XI'AN SOLAR POWER Co.,Ltd. Patentee before: XINING BRANCH OF SPIC XI'AN SOLAR POWER Co.,Ltd. Patentee before: Huanghe Hydropower Development Co., Ltd. Patentee before: HUANGHE HYDROPOWER DEVELOPMENT Co.,Ltd. |
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| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20220328 Address after: 810007 No. 4, Jinsi Road, Dongchuan Industrial Park, Xining City, Qinghai Province Patentee after: Huanghe Hydropower Development Co., Ltd. Patentee after: Xi'an solar power branch of Qinghai upper Yellow River Hydropower Development Co.,Ltd. Patentee after: HUANGHE HYDROPOWER DEVELOPMENT Co.,Ltd. Address before: No. 589, Chang'an Street, Xi'an Aerospace base, Shaanxi Province, 710099 Patentee before: STATE POWER INVESTMENT CORPORATION XI'AN SOLAR POWER Co.,Ltd. Patentee before: Huanghe hydropower Xining Solar Power Co.,Ltd. Patentee before: HUANGHE HYDROPOWER DEVELOPMENT Co.,Ltd. Patentee before: Huanghe Hydropower Development Co., Ltd. |
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| TR01 | Transfer of patent right |