CN209803765U - Photoelectric sensing device and electronic equipment - Google Patents

Abstract

The utility model discloses a photoelectric sensing device and electronic equipment, this photoelectric sensing device include a semiconductor substrate, semiconductor substrate is including relative first surface and the second surface that sets up, form a plurality of photosensitive pixels on semiconductor substrate's the first surface, the second of semiconductor substrate forms a plurality of court on the surface the first surface link up semiconductor substrate's through-hole, just the through-hole with photosensitive pixel corresponds. The electronic equipment comprises the photoelectric sensing device.

Description

Photoelectric sensing device and electronic equipment

Technical Field

the utility model relates to a photoelectric sensing field especially relates to a photoelectric sensing device and electronic equipment.

Background

At present, a biological information sensor, especially a fingerprint sensor, has gradually become a standard component of electronic products such as mobile terminals. Because optical fingerprint identification sensor has stronger penetrability than capacitanc fingerprint identification sensor, consequently someone proposes an optical fingerprint identification module who is applied to mobile terminal. As shown in fig. 1, the optical fingerprint recognition module includes an optical fingerprint sensor 400 and a light source 402. The optical fingerprint sensor 400 is disposed under a protective cover 401 of the mobile terminal. The light source 402 is disposed adjacent to one side of the optical fingerprint recognition sensor 400. When the finger F of the user touches the protective cover 401, the light signal emitted from the light source 402 passes through the protective cover 401 and reaches the finger F, is reflected by the valleys and ridges of the finger F, and is received by the optical fingerprint recognition sensor 400, and forms a fingerprint image of the finger F.

However, the optical fingerprint recognition module cannot obtain a clear image, and still needs to be improved.

SUMMERY OF THE UTILITY MODEL

The embodiment of the utility model provides a aim at solving one of the technical problem that exists among the prior art at least. Therefore, the embodiments of the present invention need to provide a photoelectric sensing apparatus and an electronic device.

the utility model discloses embodiment's a photoelectric sensing device, including a semiconductor substrate, semiconductor substrate is including relative first surface and the second surface that sets up, form a plurality of photosensitive pixels on semiconductor substrate's the first surface, semiconductor substrate's the second forms a plurality of court on the surface the first surface link up semiconductor substrate's through-hole, just the through-hole with photosensitive pixel corresponds.

The utility model discloses among the embodiment, through form photosensitive pixel and the through-hole that corresponds with photosensitive pixel on semiconductor substrate, because semiconductor substrate's extinction characteristic, consequently only light signal in the predetermined range passes the through-hole and is absorbed by photosensitive pixel to make received light signal can not take place the aliasing between the adjacent photosensitive pixel, photosensitive pixel carries out the image that obtains behind the light sensing more clear, thereby improved photoelectric sensing device sensing precision. The photosensitive pixels and the through holes are formed on the same semiconductor substrate, so that the thickness of the photoelectric sensing device is reduced, and the cost of the photoelectric sensing device is further reduced.

In some embodiments, the photosensitive pixel includes at least one photosensitive device, and a photosensitive surface of the photosensitive device is disposed corresponding to the through hole.

The photosensitive device and the through hole are correspondingly arranged, so that all optical signals passing through the through hole are received by the photosensitive device, and the sensing precision of the photoelectric sensing device is improved.

In some embodiments, the semiconductor substrate is a silicon wafer of a predetermined thickness.

In some embodiments, the semiconductor substrate is formed from a silicon wafer that has been thinned to a predetermined thickness.

in some embodiments, the via is formed by etching on a semiconductor substrate.

In some embodiments, the via is formed using gas etching or ion beam etching.

The anti-aliasing effect is realized by forming the through hole on the semiconductor substrate, the processing technology is relatively simple, and the anti-aliasing effect is also ensured.

In some embodiments, the through holes are evenly distributed. Through the arrangement of the through holes with small apertures and the uniform distribution of the through holes, the photosensitive pixels are ensured to be provided with the through holes correspondingly, and the preparation process of the semiconductor substrate is simpler. In addition, the through hole with the small aperture enables the anti-aliasing effect of the semiconductor substrate to be better, and therefore the sensing precision of the photoelectric sensing device is improved.

In some embodiments, the through hole is filled with a transparent material. Transparent materials are filled in the through holes, so that the strength of the semiconductor substrate is increased, and the influence of impurities in the through holes on the light transmission effect can be avoided.

In some embodiments, each photosensitive device corresponds to a plurality of the through holes. Through corresponding a plurality of through-holes on the photosensitive device for the photosensitive device can sense sufficient light signal, thereby has guaranteed photoelectric sensing device's sensing effect.

in some embodiments, a filter is disposed on the second surface, and the filter is configured to filter light signals outside a predetermined wavelength band.

In some embodiments, the predetermined wavelength band is a wavelength band corresponding to blue and green light signals. By means of the arrangement of the filter membrane, interference signals in the ambient light can be effectively filtered, and therefore sensing precision is improved.

In some embodiments, the optoelectronic sensing device further includes a package body for packaging the semiconductor substrate and the photosensitive pixels.

In some embodiments, the optoelectronic sensing device is a fingerprint sensing device.

In some embodiments, the optoelectronic sensing device is a photo chip for sensing biometric information.

The utility model discloses embodiment's an electronic equipment, including the photoelectric sensing device of any one of above-mentioned embodiment. Since the electronic device has the photoelectric sensing apparatus according to any of the above embodiments, the photoelectric sensing apparatus has all the advantages.

Additional aspects and advantages of embodiments of the invention will be set forth in part in the description which follows and, in part, will be obvious from the description, or may be learned by practice of embodiments of the invention.

Drawings

The above and/or additional aspects and advantages of embodiments of the present invention will become apparent and readily appreciated from the following description of the embodiments, taken in conjunction with the accompanying drawings of which:

FIG. 1 is a schematic diagram of an optical sensing structure applied to an electronic device in the prior art;

Fig. 2 is a schematic front structural view of an optoelectronic sensing device according to an embodiment of the present invention applied to an electronic device;

FIG. 3 is a schematic cross-sectional view of the electronic device of FIG. 2 along line I-I, wherein only a portion of the electronic device is shown;

Fig. 4 is a schematic structural diagram of a photoelectric sensor device according to an embodiment of the present invention;

Fig. 5 is a schematic view illustrating ambient light interference when the electronic device executes light sensing according to an embodiment of the present invention;

Fig. 6 is a schematic structural view of an optoelectronic sensing device according to another embodiment of the present invention;

Fig. 7 is a schematic structural view of an optoelectronic sensing device according to yet another embodiment of the present invention;

Fig. 8 is a block diagram of a photoelectric sensor device according to an embodiment of the present invention;

Fig. 9 is a schematic circuit diagram of a photosensitive pixel according to an embodiment of the present invention;

fig. 10 is a schematic circuit diagram of a photosensitive pixel according to another embodiment of the present invention;

FIG. 11 is a partially enlarged schematic view of the display screen and photo-sensing device shown in FIG. 3 at area A;

Fig. 12 is a schematic diagram of relative positions of display pixels and photo sensors in an electronic device according to an embodiment of the present invention;

Fig. 13 is a schematic cross-sectional structure diagram of an electronic device according to another embodiment of the present invention, in which only a part of the structure of the electronic device is shown;

Fig. 14 is a schematic diagram illustrating a correspondence relationship between a display area of a display panel and a sensing area of a light-sensing panel according to an embodiment of the present invention.

Detailed Description

Reference will now be made in detail to embodiments of the present invention, examples of which are illustrated in the accompanying drawings, wherein like reference numerals refer to the same or similar elements or elements having the same or similar function throughout. The embodiments described below with reference to the accompanying drawings are exemplary only for the purpose of explaining the present invention, and should not be construed as limiting the present invention.

In the description of the present invention, it is to be understood that the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implying any number of technical features indicated. Thus, features defined as "first", "second", may explicitly or implicitly include one or more of the described features. In the description of the present invention, "a plurality" means two or more unless specifically limited otherwise. "contact" or "touch" includes direct contact or indirect contact. For example, the photoelectric sensing device disclosed hereinafter, which is disposed inside the electronic apparatus, for example, below the display screen, indirectly contacts the photoelectric sensing device with the user's finger through the protective cover and the display screen.

In the description of the present invention, it is to be noted that, unless otherwise explicitly specified or limited, the terms "mounted," "connected," and "connected" are to be construed broadly, and may be, for example, fixedly connected, detachably connected, or integrally connected; may be mechanically connected, may be electrically connected or may be in communication with each other; either directly or indirectly through intervening media, either internally or in any other relationship. The specific meaning of the above terms in the present invention can be understood according to specific situations by those skilled in the art.

The following disclosure provides many different embodiments or examples for implementing different features of the invention. In order to simplify the disclosure of the present invention, the components and settings of the specific examples are described below. Of course, they are merely examples and are not intended to limit the present invention. Furthermore, the present invention may repeat reference numerals and/or reference letters in the various examples, which are repeated for purposes of simplicity and clarity and do not by themselves dictate a relationship between the various embodiments and/or configurations discussed. In addition, the present disclosure provides examples of various specific processes and materials, but one of ordinary skill in the art may recognize applications of other processes and/or use of other materials.

Further, the described features, structures, or characteristics may be combined in any suitable manner in one or more embodiments. In the following description, numerous specific details are provided to give a thorough understanding of embodiments of the invention. One skilled in the relevant art will recognize, however, that the invention may be practiced without one or more of the specific details, or with other structures, components, and so forth. In other instances, well-known structures or operations are not shown or described in detail to avoid obscuring the invention.

the embodiment of the present invention provides a photoelectric sensor device disposed in an electronic apparatus, and the display screen, such as but not limited to an OLED display panel, has a display device for emitting light signals. When the electronic equipment works, the display screen sends out optical signals to realize corresponding display effect. At this time, if a target object touches the electronic device, the optical signal emitted by the display screen is reflected after reaching the target object, the reflected optical signal passes through the display screen and is received by the photoelectric sensing device, and the photoelectric sensing device converts the received optical signal into an electrical signal corresponding to the optical signal. According to the electric signal generated by the photoelectric sensing device, the preset biological characteristic information of the target object can be obtained.

The electronic device may be, for example, but not limited to, a consumer electronic product, a home electronic product, a vehicle-mounted electronic product, a financial terminal product, or other suitable type of electronic product. The consumer electronic products include mobile phones, tablet computers, notebook computers, desktop displays, all-in-one computers, and the like. The household electronic products are intelligent door locks, televisions, refrigerators, wearable equipment and the like. The vehicle-mounted electronic products are vehicle-mounted navigators, vehicle-mounted DVDs and the like. The financial terminal products are ATM machines, terminals for self-service business handling and the like. The following embodiments are described by taking a mobile terminal of a mobile phone type as an example, but as described above, the following embodiments can also be applied to other suitable electronic products, and are not limited to the mobile terminal of the mobile phone type.

The predetermined biometric information (or image information) of the target object is, for example, but not limited to, skin texture information such as fingerprints, palm prints, ear prints, and sole prints, and other suitable biometric information such as heart rate, blood oxygen concentration, veins and arteries. The predetermined biometric information may be any one or more of the aforementioned listed information. The target object is, for example, but not limited to, a human body, but may be other suitable types of organisms.

Referring to fig. 2 and fig. 3, fig. 2 shows a front structure of an embodiment of an electronic device to which the photoelectric sensing apparatus of the present invention is applied, and fig. 3 shows a partial cross-sectional structure of the electronic device in fig. 2 along the line I-I. The utility model discloses embodiment's photoelectric sensing device 20 is applied to a mobile terminal 100, and this mobile terminal 100's front is equipped with a display screen 10, and this display screen 10 top is equipped with protection apron 30. Optionally, the screen content of the display screen 10 is high, for example, more than 80%. The screen occupation ratio refers to a ratio of the display area S1 of the display screen 10 to the front area of the mobile terminal 100. The photoelectric sensing device 20 is correspondingly disposed below the display screen 10, and is correspondingly disposed in a partial area of the display area S1 of the display screen 10. The area of the front surface of the mobile terminal 100 corresponding to or facing the photo sensor device 20 is defined as a sensing region S2. The photo sensor device 20 is used to sense predetermined biometric information of a target object touching or proximate to the sensing region S2. It is understood that the photoelectric sensing apparatus 20 may also be disposed under the protective cover 30 and located in the front non-display area of the mobile terminal.

The sensing region S2 can be any position on the display region. For example, the sensing region S2 is disposed at a middle-lower position corresponding to the display region of the display screen 10. It is understood that the sensing region S2 is disposed at a middle-lower position corresponding to the display screen 10 for the convenience of the user. For example, when the user holds the mobile terminal 100, the user' S thumb may facilitate touching the location of the sensing region S2. Of course, the sensing region S2 may be placed at other suitable locations where a user may conveniently touch.

When the mobile terminal 100 is in a bright screen state and in the biometric information sensing mode, the display screen 10 emits an optical signal. When an object contacts or approaches the sensing region S2, the photo sensor device 20 receives light reflected by the object, converts the received light into a corresponding electrical signal, and obtains predetermined biometric information of the object, such as fingerprint image information, according to the electrical signal. Thus, the photoelectric sensing apparatus 20 can sense a target object touching or approaching a local area above the display area.

Referring to fig. 4, fig. 4 shows a partial structure of a photoelectric sensing apparatus according to an embodiment of the present invention. The photo-sensing device 20 includes a semiconductor substrate 24, and the semiconductor substrate 24 includes a first surface 240 and a second surface 242 disposed opposite to each other. Wherein a plurality of light-sensitive pixels 22 are formed on the first surface 240 of the semiconductor substrate 24, and a plurality of through holes 241 penetrating the semiconductor substrate 24 toward the first surface 240 are formed on the second surface 242 of the semiconductor substrate 24, and the through holes 241 correspond to the light-sensitive pixels 22.

Due to the fact that the reflection of the optical signals at different parts of the target object is different, and the surface of the target object is uneven, some parts of the target object are in contact with the protective cover plate 30 (see fig. 3), some parts of the target object are not in contact with the protective cover plate 30, so that diffuse reflection occurs at the contact position, and mirror reflection occurs at the non-contact position, the optical signals sensed between the adjacent photosensitive pixels 22 can be mixed, and the acquired sensed image is blurred. Therefore, the embodiment of the present invention forms the photosensitive pixels 22 and the through holes 241 corresponding to the photosensitive pixels 22 on the semiconductor substrate 24, the photosensitive pixels 22 receive the optical signals passing through the through holes 241, and convert the received optical signals into corresponding electrical signals, so that the arrangement of the through holes 241 can prevent the received optical signals of the adjacent photosensitive pixels 22 from aliasing, so that the obtained sensing image is clear, and the sensing accuracy of the photoelectric sensing device 20 is improved.

In addition, since the through hole 241 is directly formed on the semiconductor substrate 24, the thickness of the photoelectric sensing device 20 is reduced, and the cost of the photoelectric sensing device 20 is reduced, which is beneficial for the development of electronic equipment towards the direction of light weight and thinness.

In some embodiments, since the semiconductor material has a light absorption property, most of the light signals irradiated onto the semiconductor substrate 24 are absorbed by the semiconductor substrate 24, and only the light signals within a predetermined range can pass through the through holes 241 and be received by the light-sensing pixels 22. The optical signal within the predetermined range is an optical signal approximately perpendicular to the semiconductor substrate 24. In this manner, aliasing of the received optical signals between adjacent photosensitive pixels 22 can be prevented. Note that the optical signal approximately perpendicular to the semiconductor substrate 24 includes an optical signal perpendicular to the semiconductor substrate 24 and an optical signal shifted within a predetermined angle range from the perpendicular direction of the semiconductor substrate 24. The preset angle range is within ± 20 °.

In some embodiments, the smaller the aperture of the via 241, the better the anti-aliasing effect. In this way, the through-hole 241 having a small aperture can be provided on the semiconductor substrate 24, and the through-hole 241 is provided corresponding to the photosensitive pixel 22, so that the anti-aliasing effect can be improved.

Further, the plurality of through holes 241 on the semiconductor substrate 24 are uniformly distributed, so that the manufacturing process of the semiconductor substrate 24 is simple, and each photosensitive pixel 22 corresponds to the plurality of through holes 241, so that the photosensitive pixel 22 can sense a sufficient optical signal, thereby ensuring the sensing effect of the photoelectric sensing device 20.

further, the semiconductor substrate 24 is a silicon wafer with a predetermined thickness, and through the setting of the predetermined thickness, aliasing of optical signals received between adjacent photosensitive pixels 22 can be effectively prevented. If the thickness of the silicon wafer is larger than the preset thickness, the silicon wafer can be thinned to reach the preset thickness.

In some embodiments, the via 241 is formed by etching on the semiconductor substrate 24. Because the silicon wafer has certain hardness, the process for forming the through hole on the silicon wafer by etching is relatively simple and is easier to realize. Specifically, the etching method may adopt a dry etching method such as gas etching or ion beam etching, so that effective formation of the through hole 241 may be ensured, and an anti-aliasing effect may be ensured.

In some embodiments, the through holes 241 may be filled with a transparent material to increase the strength of the semiconductor substrate 24 and prevent impurities from entering the through holes 241 and affecting the light transmission effect. In order to ensure the light transmission effect of the through hole 241, the transparent material may be a material with a relatively high light transmittance, such as glass, PMMA (acrylic), PC (polycarbonate), or the like.

In some embodiments, referring to fig. 5, fig. 5 illustrates a situation in which the electronic device is affected by ambient light when performing sensing. Taking the target object F as an example of a finger, when the finger is located on the protective cover 30, if there is ambient light on the finger, and the finger has many tissue structures, such as epidermis, bone, flesh, blood vessels, etc., part of the light signal in the ambient light penetrates through the finger, and part of the light signal is absorbed by the finger. The optical signal penetrating through the finger is transmitted to the protective cover 30 below the finger and reaches the photoelectric sensing device 20, and at this time, the photoelectric sensing device 20 not only senses the optical signal reflected by the target object F, but also senses the optical signal of the environment light penetrating through the finger, so that accurate sensing cannot be performed. Therefore, in order to avoid the influence of the ambient light on the sensing of the target object F by the photoelectric sensing device 20, as shown in fig. 6, fig. 6 shows a structure of the photoelectric sensing device 20 according to another embodiment of the present invention. The semiconductor substrate 24 is provided with the filter 23, that is, the filter 23 is disposed on the second surface 242 of the semiconductor substrate 24. The filter 23 is used for filtering light signals outside a predetermined wavelength band. In this embodiment, the optical signal outside the predetermined wavelength band is an interference signal formed by ambient light, that is, an optical signal that can penetrate through a finger in the ambient light. The filter film 23 filters out interference signals in the reflected optical signals, thereby improving the sensing accuracy of the photoelectric sensing device 20.

In some embodiments, the optical signal other than the optical signal in the predetermined wavelength band is an optical signal in a longer wavelength band of the ambient light, because the optical signal in the longer wavelength band can penetrate through the target object, and the optical signal in the shorter wavelength band is absorbed by the target object. Therefore, the light signal penetrating through the finger in the ambient light can be filtered by filtering the light signal in a longer wave band in the ambient light, and the purpose of eliminating the interference signal of the ambient light is achieved.

In some embodiments, the predetermined wavelength band is a wavelength band corresponding to the blue light signal, i.e., the filter 23 filters out light signals other than the blue light signal.

In some embodiments, the predetermined wavelength band is a wavelength band corresponding to the green light signal, i.e., the filter 23 filters out light signals other than the green light signal.

Among the red light signal, the blue light signal, and the green light signal of the ambient light, the target object F such as a finger absorbs the red light signal weakest, and absorbs the blue light signal strongest next to the green light signal. I.e. ambient light is shining on the finger, a large amount of the blue light signal is absorbed by the finger, and only a small amount, even no blue light signal penetrates the finger. Therefore, the optical signals in the wavelength bands other than the blue light signal or the green light signal are selected for filtering, so that the interference of the ambient light can be greatly eliminated, and the sensing accuracy of the photoelectric sensing device 20 can be improved.

in some embodiments, referring to fig. 7, fig. 7 shows a structure of an optoelectronic sensing device 20 according to another embodiment of the present invention. In some embodiments, the optoelectronic sensing device 20 further includes a package 30 for packaging the semiconductor substrate 24 and all devices on the semiconductor substrate 24, such as the photosensitive pixels 22 and the filter 23. In particular, the package 30 may also fill the via 282.

Referring to fig. 8, fig. 8 shows a structure of a photoelectric sensing device 20 according to an embodiment. The semiconductor substrate 24 further forms a scan line group and a data line group electrically connected to the photosensitive pixels 22, wherein the scan line group is configured to receive a corresponding driving signal to drive the photosensitive pixels 22 to perform the photo sensing, and the data line group is configured to output an electrical signal generated by the photosensitive pixels 22 performing the photo sensing. The semiconductor substrate 24 is, for example, but not limited to, a silicon substrate or the like.

In particular, in some embodiments, with continued reference to fig. 8, the photosensitive pixels 22 are distributed in an array, such as a matrix. Of course, other regular or irregular distributions are also possible. The scan line group includes a plurality of scan lines 201, the data line group includes a plurality of data lines 202, and the plurality of scan lines 201 and the plurality of data lines 202 are disposed to cross each other and between adjacent photosensitive pixels 22. For example, a plurality of scan lines G1, G2 … Gm are arranged at intervals in the Y direction, and a plurality of data lines S1, S2 … Sn are arranged at intervals in the X direction. However, the plurality of scan lines 201 and the plurality of data lines 202 may be arranged at a certain angle, for example, 30 ° or 60 °, instead of being arranged perpendicularly as shown in fig. 8. In addition, due to the conductivity of the scan lines 201 and the data lines 202, the scan lines 201 and the data lines 202 at the crossing positions are isolated from each other by an insulating material.

It should be noted that the distribution and number of the scan lines 201 and the data lines 202 are not limited to the above-mentioned embodiments, and corresponding scan line groups and data line groups may be correspondingly arranged according to different structures of photosensitive pixels.

Further, referring to fig. 8, the scan lines 201 are connected to a driving circuit 25, and the data lines 202 are connected to a signal processing circuit 27. The driving circuit 25 is configured to provide a corresponding scan driving signal, and transmit the scan driving signal to a corresponding photosensitive pixel 22 through a corresponding scan line 201, so as to activate the photosensitive pixel 22 to perform light sensing. The driving circuit 25 is formed on the substrate 26, and may be electrically connected to the photosensitive pixels 22 through a flexible circuit board, i.e., connected to the plurality of scanning lines 201. The signal processing circuit 27 receives an electric signal generated by the corresponding photosensitive pixel 22 performing the light sensing through the data line 202, and acquires the biometric information of the target object based on the electric signal.

In some embodiments, the photo-sensing device 20 further includes a controller 29, and the controller 29 is configured to control the driving circuit to output a corresponding scanning driving signal, such as, but not limited to, activating the photosensitive pixels 22 row by row to perform photo-sensing. The controller 29 is also configured to control the signal processing circuit 27 to receive the electrical signals output by the photosensitive pixels 22, and generate biometric information of the target object based on the electrical signals after receiving the electrical signals output by all the photosensitive pixels 22 that perform the photo sensing.

Further, the signal processing circuit 27 and the controller 29 may be formed on the semiconductor substrate 24, or may be electrically connected to the photosensitive pixels 22 through a flexible circuit board.

In some embodiments, as shown in fig. 9, fig. 9 illustrates a circuit configuration of a light-sensitive pixel 22 of an embodiment. The light-sensitive pixel 22 includes a light-sensitive device 220 and a switching device 222. The switch device 222 has a control terminal C and two signal terminals, such as a first signal terminal Sn1 and a second signal terminal Sn 2. The control terminal C of the switching device 222 is connected to the scan line 201, the first signal terminal Sn1 of the switching device 222 is connected to a reference signal L via the photo sensor 220, and the second signal terminal Sn2 of the switching device 222 is connected to the data line 202. It should be noted that the photosensitive pixel 22 shown in fig. 9 is for illustration only, and is not limited to other constituent structures of the photosensitive pixel 22.

Specifically, the photosensitive device 220 may be, for example, but not limited to, any one or more of a photodiode, a phototransistor, a photodiode, a photoresistor, and a thin film transistor. Taking a photodiode as an example, negative voltages are applied to two ends of the photodiode, at this time, when the photodiode receives an optical signal, a photocurrent proportional to the optical signal is generated, and the larger the intensity of the received optical signal is, the higher the generated photocurrent is, the higher the speed of voltage drop on the cathode of the photodiode is, so that by collecting voltage signals on the cathode of the photodiode, the intensities of optical signals reflected by different parts of a target object are obtained, and further, biological characteristic information of the target object is obtained. It is understood that a plurality of the light sensing devices 220 may be provided in order to increase the light sensing effect of the light sensing devices 220.

Further, the switching device 222 is, for example, but not limited to, any one or more of a triode, a MOS transistor, and a thin film transistor. Of course, the switching device 222 may also include other types of devices, and the number may also be 2, 3, etc.

In some embodiments, in order to further improve the sensing accuracy of the photo-sensor device 20, the photo-sensor device 220 with high sensitivity to the blue light signal may be selected. By selecting the photo sensor device 220 with high sensitivity to blue and green light signals to perform photo sensing, the photo sensor device 220 is more sensitive to blue and green light signals, and thus interference caused by red light signals in ambient light is avoided to a certain extent, thereby improving sensing accuracy of the photo sensor device 20.

Taking the structure of the light-sensing pixel 22 shown in fig. 9 as an example, the gate of the thin film transistor TFT serves as the control terminal C of the switching device 222, and the source and drain of the thin film transistor TFT correspond to the first signal terminal Sn1 and the second signal terminal Sn2 serving as the switching device 222. The gate of the thin film transistor TFT is connected to the scanning line 201, the source of the thin film transistor TFT is connected to the cathode of the photodiode D1, and the drain of the thin film transistor TFT is connected to the data line 202. The anode of the photodiode D1 is connected to a reference signal L, which is, for example, a ground signal or a negative voltage signal.

when the photosensitive pixel 22 performs light sensing, a driving signal is applied to the gate of the TFT through the scan line 201 to drive the TFT to be turned on. At this time, the data line 202 is connected to a positive voltage signal, when the TFT is turned on, the positive voltage signal on the data line 202 is applied to the cathode of the photodiode D1 through the TFT, and since the anode of the photodiode D1 is grounded, a reverse voltage is applied across the photodiode D1, so that the photodiode D1 is in a reverse bias state, i.e., in an operating state. At this time, when an optical signal is irradiated to the photodiode D1, the reverse current of the photodiode D1 rapidly increases, thereby causing a current change on the photodiode D1, which can be obtained from the data line 202. Since the larger the intensity of the optical signal is, the larger the generated reverse current is, the intensity of the optical signal can be obtained according to the current signal acquired on the data line 202, and thus the biometric information of the target object can be obtained.

In some embodiments, the reference signal L may be a positive voltage signal, a negative voltage signal, a ground signal, or the like. As long as the electrical signal provided on the data line 202 and the reference signal L are applied to the two ends of the photodiode D1, so that the two ends of the photodiode D1 form a reverse voltage to perform the light sensing, the present invention is within the scope of the present invention.

It is to be understood that the connection method of the thin film transistor TFT and the photodiode D1 in the photosensitive pixel 22 is not limited to the connection method shown in fig. 9, and other connection methods may be used. For example, as shown in fig. 10, fig. 10 illustrates a circuit structure of a photosensitive pixel of another embodiment. The gate G of the thin film transistor TFT is connected to the scanning line 201, the drain D of the thin film transistor TFT is connected to the positive electrode of the photodiode D1, and the source S of the thin film transistor TFT is connected to the data line 202. The cathode of the photodiode D1 is connected to the positive voltage signal Vcc.

Further, the photo sensor device 220 is disposed corresponding to the through hole 282 to ensure that all the light signals passing through the through hole 282 are received by the photo sensor device 220, thereby improving the sensing accuracy of the photo sensor device 20.

Referring to fig. 3 and 4, the photoelectric sensing device 20 is a photosensitive chip, and is located below the display screen 10 for sensing the biometric information. Specifically, the first surface 240 of the photo sensor device 20 is far from the display screen 10, and the second surface 242 of the photo sensor device 20 is close to the display screen 10. When the photoelectric sensing device 20 performs sensing, the photoelectric sensing device 20 uses the optical signal emitted by the display screen 10 as a light source, and after the optical signal emitted by the display screen 10 reaches a finger, the optical signal reflected by the finger passes through the display screen 10 and then passes through the through hole 241 on the semiconductor substrate 24, so as to be received by the photosensitive pixel 22.

Referring to fig. 11, fig. 11 shows a partial enlarged structure of the photo sensor device 20 and the display screen 10 shown in fig. 3 at the area a. The display screen 10 includes a plurality of display pixels 12. Alternatively, in one embodiment, the light-sensing pixels 22 are disposed in correspondence with the display pixels 12. Of course, the light-sensing pixels 22 under the display screen 10 are not limited to be disposed corresponding to the display pixels 12, and may be disposed in other manners. For example, referring to fig. 12, fig. 12 illustrates relative positions of display pixels and photo sensors in an electronic device according to an embodiment. A gap H is provided between adjacent display pixels 12, and the gap H has a light-transmitting region therein. The photo-sensing devices 220 in the photo-sensing pixels 22 are correspondingly disposed below the gaps H between adjacent display pixels. Such as but not limited to directly below, may be any location where sufficient optical signals are received. It can be understood that the more the light signal passes through the gap H, the higher the sensing accuracy of the photo-sensor device 20. The display pixels shown in fig. 12 are not limited to the structure of the display panel 10, the display pixels of the display panel 10 may include other types, and the display pixels 12 in the display panel 10 are not limited to the arrangement shown in fig. 12, and may have other arrangements, such as a pentiel arrangement.

Since the light-sensing pixels 22 receive the light signals passing through the display screen 10, the display screen 10 has corresponding light-transmitting areas, and as long as the light-sensing surfaces of the light-sensing pixels 22 are disposed corresponding to the light-transmitting areas, it is ensured that sufficient light signals can be sensed by the light-sensing pixels 22, thereby performing light sensing efficiently.

Further, the display panel 10 further includes a driving circuit and a corresponding driving circuit (not shown in the figure) for driving each display pixel 12 to emit light, and the driving circuit and the corresponding driving circuit may be disposed between each display pixel 12 or disposed below each display pixel 12. For better display effect, the areas of the display pixels, the driving circuits and the corresponding driving circuits are set to be opaque areas, and the rest areas are set to be transparent areas. And the light sensing device 220 is located below the light transmissive region for better light sensing. It is understood that the light-transmissive area and the light-opaque area of the display screen 10 are not strictly limited, and whether the light is transmitted is determined by the composition and distribution of the composition of the display screen 10. For example, when the structure forming the display pixels 12 adopts a transparent structure, the region where the display pixels are disposed will become a light-transmitting region.

In one embodiment, referring to fig. 13 and 14, fig. 13 and 14 show a partial structure of an electronic device according to another embodiment of the present invention. The electronic equipment comprises a protective cover plate 30, a display screen 10 and a photoelectric sensing device 20, wherein the protective cover plate 30 is positioned above the display screen 10, and the photoelectric sensing device 20 is positioned below the display screen 10. The photo sensor device 20 is a photo panel, and the photo panel is stacked on the display screen 10. In addition, the composition structure and the sensing principle of the photoelectric sensing apparatus 20 are described with reference to the foregoing embodiments, and are not repeated herein.

In some embodiments, the photo sensor device 20 is used to perform biometric information sensing of a target object anywhere within the display area of the display screen. Specifically, for example, the display panel 10 has a display area 105 and a non-display area 106, the display area 105 is defined by light emitting areas of all the display pixels 12 of the display panel 10, an area outside the display area 105 is the non-display area 106, and the non-display area 106 is used for setting circuits such as a display driving circuit for driving the display pixels 12 or a circuit bonding area for connecting a flexible circuit board. The photosensitive panel has a sensing region 203 and a non-sensing region 204, the sensing region 203 is defined by the sensing regions of all the photosensitive pixels 22, the region outside the sensing region 203 is the non-sensing region 204, and the non-sensing region 204 is used for setting circuits such as a photosensitive driving circuit for driving the photosensitive pixels 22 to perform optical sensing or a circuit bonding region for connecting a flexible circuit board. The shape of the sensing region 203 conforms to the shape of the display region 105, and the size of the sensing region 203 is greater than or equal to the size of the display region 105, such that the photo-sensing panel is capable of sensing predetermined biometric information of a target object in contact with or in proximity to any location of the display region 105 of the display screen 10. Further, the area of the photosensitive panel is smaller than or equal to the area of the display screen 10, and the shape of the photosensitive panel is consistent with the shape of the display screen 10, so that the assembly of the photosensitive panel and the display screen 10 is facilitated. However, alternatively, in some embodiments, the area of the photosensitive panel may be larger than the area of the display screen 10.

in some embodiments, the sensing area 203 of the photosensitive panel may also be smaller than the display area 105 of the display screen 10, so as to realize sensing of the predetermined biometric information of the target object in a local area of the display area 105 of the display screen 10.

In the description herein, references to the description of the terms "one embodiment," "certain embodiments," "an illustrative embodiment," "an example," "a specific example," or "some examples," etc., mean that a particular feature, structure, material, or characteristic described in connection with the embodiment or example is included in at least one embodiment or example of the invention. In this specification, schematic representations of the above terms do not necessarily refer to the same embodiment or example. Furthermore, the particular features, structures, materials, or characteristics described may be combined in any suitable manner in any one or more embodiments or examples.

Furthermore, the terms "first", "second" and "first" are used for descriptive purposes only and are not to be construed as indicating or implying relative importance or implicitly indicating the number of technical features indicated. Thus, a feature defined as "first" or "second" may explicitly or implicitly include at least one such feature. In the description of the present invention, "a plurality" means at least two, e.g., two, three, etc., unless specifically limited otherwise.

Although embodiments of the present invention have been shown and described above, it is to be understood that the above embodiments are exemplary and should not be construed as limiting the present invention, and that variations, modifications, substitutions and alterations may be made to the above embodiments by those of ordinary skill in the art without departing from the scope of the present invention.

Claims (15)

1. An optoelectronic sensing device, comprising: the semiconductor substrate comprises a first surface and a second surface which are oppositely arranged, a plurality of photosensitive pixels are formed on the first surface of the semiconductor substrate, a plurality of faces are formed on the second surface of the semiconductor substrate, the first surface penetrates through the through holes of the semiconductor substrate, and the through holes correspond to the photosensitive pixels.

2. the photo-sensing device of claim 1, wherein: the photosensitive pixel comprises at least one photosensitive device, and the photosensitive surface of the photosensitive device is arranged corresponding to the through hole.

3. The photo-sensing device of claim 1, wherein: the semiconductor substrate is a silicon wafer with a preset thickness.

4. The photo-sensing device of claim 3, wherein: the semiconductor substrate is formed by thinning a silicon wafer to a predetermined thickness.

5. The photo-sensing device of claim 1, wherein: the through-hole is formed by etching on the semiconductor substrate.

6. The photo-sensing device of claim 5, wherein: the through hole is formed by adopting gas etching or ion beam etching.

7. The photo-sensing device of claim 1, wherein: the through holes are uniformly distributed.

8. The photo-sensing device of claim 1, wherein: and transparent materials are filled in the through holes.

9. The photo-sensing device of claim 2, wherein: each photosensitive device corresponds to a plurality of through holes.

10. The optoelectronic sensing device of any one of claims 1 to 9, wherein: the second surface is provided with a filter film, and the filter film is used for filtering light signals outside a preset waveband.

11. The photo-sensing device of claim 8, wherein: the preset wave band is a wave band corresponding to the blue light signal and the green light signal.

12. The photo-sensing device of claim 1, wherein: the photoelectric sensing device also comprises a packaging shell, and the packaging shell is used for packaging the semiconductor substrate and the photosensitive pixels.

13. the photo-sensing device of claim 1, wherein: the photoelectric sensing device is a fingerprint sensing device.

14. The photo-sensing device of claim 1, wherein: the photoelectric sensing device is a photosensitive chip and is used for sensing biological characteristic information.

15. an electronic device, characterized in that: comprising an optoelectronic sensing device according to any one of claims 1 to 14.