CN209798087U - Physical vapor deposition equipment - Google Patents
Physical vapor deposition equipment Download PDFInfo
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- CN209798087U CN209798087U CN201822155633.6U CN201822155633U CN209798087U CN 209798087 U CN209798087 U CN 209798087U CN 201822155633 U CN201822155633 U CN 201822155633U CN 209798087 U CN209798087 U CN 209798087U
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Abstract
The utility model relates to a coating film technical field provides a physical vapor deposition PVD equipment to solve the unable evenly distributed's of membrane thickness through current PVD equipment coating film problem. The equipment comprises a shell, wherein a cavity is arranged in the shell, and a target material is arranged in the cavity; and the part of the at least one air inlet pipe, which is positioned in the cavity, is provided with a plurality of air outlet holes facing the target material. Therefore, the gas entering the shell is uniform mixed gas, and the film thickness of the PVD equipment coating film is uniform.
Description
Technical Field
The utility model relates to a coating film technical field especially relates to a physical vapor deposition equipment.
Background
Physical Vapor Deposition (PVD) refers to a process of transferring atoms or molecules from a source to a surface of a substrate by Physical processes. It can make some particles with special properties (high strength, wear resistance, heat radiation, corrosion resistance, etc.) spray-coated on the parent body with lower property, so that the parent body has better property. Magnetron sputtering coating means that inert gas glow discharge is utilized to generate incident ions, argon ions bombard the surface of a target at electric power, and target atoms are sputtered and deposited on a substrate to form a film. In magnetron sputtering, PVD equipment is commonly used, and the various process gases are mixed by controlling the flow of each gas through several vent lines directly into the cavity of the PVD equipment. The air inlet of present PVD equipment is all through single gas pocket direct access multiple gas, can cause the air inlet department atmospheric pressure increase of PVD equipment, leads to the unable evenly distributed of gas that gets into in the PVD equipment cavity, consequently, also unable evenly distributed of membrane thickness through PVD equipment coating.
SUMMERY OF THE UTILITY MODEL
The embodiment of the utility model provides a physical vapor deposition equipment to the unable evenly distributed's of membrane thickness problem of solving through current PVD equipment coating film.
In order to solve the technical problem, the utility model discloses a realize like this:
An embodiment of the utility model provides a physical vapor deposition equipment, include:
The device comprises a shell, a first electrode, a second electrode, a third electrode and a fourth electrode, wherein a cavity is formed in the shell, and a target material is arranged in the cavity;
And the part of the at least one air inlet pipe, which is positioned in the cavity, is provided with a plurality of air outlet holes facing the target material.
Optionally, the plurality of air outlets are arranged at equal intervals.
optionally, the apertures of the plurality of outlet holes gradually increase along the flowing direction of the gas in the at least one inlet pipe.
optionally, the aperture range of the plurality of air outlets is 1mm to 10mm, and/or the distance range of the plurality of air outlets is 5mm to 500 mm.
Optionally, the physical vapor deposition apparatus further includes: the first end of the mixed gas pipe is communicated with the at least two raw material gas input pipes, and the at least one gas inlet pipe is communicated with the second end of the mixed gas pipe. Optionally, the air inlet pipe includes an air inlet section and at least two air distribution pipe sections arranged at intervals, the air inlet section joins the at least two air distribution pipe sections, the at least two air distribution pipe sections extend into the cavity, and a plurality of air outlet holes facing the target are formed in portions, located in the cavity, of the at least two air distribution pipe sections.
Optionally, the air inlet pipe includes an air inlet section and an annular air distribution pipe section communicated with the air inlet section, the air inlet section extends into the cavity, the annular air distribution pipe section is located in the cavity, and the annular air distribution pipe section is provided with an air outlet facing the target.
optionally, the air inlet section is disposed outside of the housing or on the housing or within the cavity.
Optionally, the at least two gas distribution pipe sections are respectively arranged on two sides of the target.
Optionally, the annular gas distribution pipe section is arranged around the target.
the embodiment of the utility model provides an in, through set up a plurality of (including two) raw material gas input tube and gas mixture pipe outside the casing, carry to the casing inside through the intake pipe again after multiple (including two kinds) raw material gas mixes in the gas mixture pipe, like this, can carry out the homogeneous mixing with various raw material gas outside the casing in advance to make the gas that gets into in the casing be homogeneous mixing gas, and then make the membrane of PVD equipment coating film thick even.
Drawings
In order to more clearly illustrate the technical solutions of the embodiments of the present invention, the drawings required to be used in the description of the embodiments of the present invention will be briefly introduced below, and it is obvious that the drawings in the following description are only some embodiments of the present invention, and for those skilled in the art, other drawings can be obtained according to these drawings without inventive labor.
FIG. 1 is a block diagram of a physical vapor deposition apparatus according to an embodiment of the present invention;
Fig. 2 is a second structural diagram of a physical vapor deposition apparatus according to an embodiment of the present invention.
Detailed Description
The technical solutions in the embodiments of the present invention will be described clearly and completely with reference to the accompanying drawings in the embodiments of the present invention, and it is obvious that the described embodiments are some, not all, of the embodiments of the present invention. Based on the embodiments in the present invention, all other embodiments obtained by a person skilled in the art without creative efforts belong to the protection scope of the present invention.
As shown in fig. 1, an embodiment of the present invention provides a physical vapor deposition apparatus, including:
the device comprises a shell 1, wherein a cavity 11 is arranged in the shell 1, and a target 2 is arranged in the cavity 11;
At least one air inlet pipe 3 communicated with the cavity 11, wherein a part of the at least one air inlet pipe 3, which is positioned in the cavity 11, is provided with a plurality of air outlet holes 31 facing the target 2;
At least two raw material gas input pipes 4, wherein each raw material gas input pipe 4 is used for respectively inputting different raw material gases;
The mixed gas pipe 5, the first end and the at least two raw materials gas input tube 4 intercommunications of mixed gas pipe 5, at least one intake pipe 3 and the second end intercommunication of mixed gas pipe 5.
In this embodiment, at least two raw material gas supply pipes 4 supply different raw material gases, respectively. Different gaseous raw materials get into 5 misce benes of gas mixing pipe after converging, and the gaseous raw materials after the misce bene gets into intake pipe 3, and a plurality of ventholes 31 that 3 parts that lie in the cavity of rethread intake pipe set up release, and the gaseous target in 11 towards the cavity of the gaseous orientation that releases from a plurality of ventholes 31, utilize the gaseous magnetron sputtering coating film that carries out of misce benes. Through set up a plurality of (including two) raw materials gas input tube 4 and gas mixture pipe 5 in casing 1 outside, carry to casing 1 inside through intake pipe 3 again after multiple (including two kinds) raw materials gas mixes in gas mixture pipe 5, can carry out the homogeneous mixing with various raw materials gas in casing 1 outside in advance to make the gas that gets into in casing 1 be homogeneous mixing gas, and then make the membrane thickness of PVD equipment coating even.
Note that, since the raw material gas is introduced into the cavity 11 from the gas inlet pipe 4, the mixed gas pipe 5, and the gas inlet pipe 3, a chemical reaction may occur due to various factors in the process. For example, oxidized. Therefore, inert gas can be introduced to protect the raw material gas and reduce the situation that the raw material gas and the pipe wall generate chemical reaction. Wherein, set up inert gas input tube and can set up through following several kinds of modes:
The first mode is to arrange an inert gas input pipe, the inert gas input pipe is arranged in parallel with at least two raw material gas input pipes, and is communicated with the first end of the mixed gas pipe 5 after being converged by at least two raw material gas input pipes 4, and the second end of the mixed gas pipe 5 is communicated with at least one gas inlet pipe 3. The inert gas and the raw material gas are mixed in the mixed gas pipe 5 and then introduced into the gas inlet pipe 3.
In the second mode, an inert gas is introduced into the at least one raw material gas inlet pipe 4 together with the at least one raw material gas. In this way, it is not necessary to provide an additional inert gas inlet pipe, but only inert gas and at least one remote gas are simultaneously introduced into at least one raw material gas inlet pipe 4.
It should be noted that, in addition to the above two modes, there may be other modes of inputting inert gas, so that the raw material gas is not easy to undergo chemical reaction, and is more introduced into the cavity 11 of the PVD apparatus.
As an alternative embodiment, the plurality of outlet holes 31 may be arranged at equal intervals.
In this embodiment, the part of the air inlet pipe 3 located in the cavity 11 is provided with the air outlets 31 which can be arranged at equal intervals, so that the air released by the air outlets 31 is more uniform.
Further, the aperture of the plurality of outlet holes 31 may gradually increase along the flow direction of the gas in the at least one inlet pipe 3.
The gas flows from the outside of the housing 11 into the cavity 11 through the gas inlet pipe 3. Since the pressure is smaller in the flow direction of the gas, the gas outlet holes 31 having a gradually increasing aperture may be provided in the flow direction of the gas. Thus, although the pressure becomes lower, the released gas can be close to the gas outlet 31 with higher pressure, so that the gas released from the gas outlet 31 in the cavity 11 is more uniform.
optionally, the aperture range of the plurality of air outlets 31 may be 1mm to 10 mm; and/or the spacing of the plurality of outlet holes 31 may range from 5mm to 500 mm.
that is, the aperture range of the gas outlet holes 31 and/or the distance range of the gas outlet holes 31 may be the same as the above range, and in this range, the gas released from the gas outlet holes 31 may be more uniform.
It should be noted that, the aperture range of the plurality of air outlets and the distance range of the plurality of air outlets are not limited to the above ranges, and may also be other value ranges that enable the gas released by the air outlets to be more uniform.
As an alternative embodiment, the gas inlet tube 3 may include a gas inlet section 33 and at least two gas distribution tube sections 32 arranged at intervals, the gas inlet section 33 merges with the at least two gas distribution tube sections 32, the at least two gas distribution tube sections 32 extend into the cavity 11, and a portion of the at least two gas distribution tube sections 32 located in the cavity 11 is provided with a plurality of gas outlet holes facing the target.
In the present embodiment, the intake pipe 3 includes a gas distribution pipe section 32 and an intake section 33. The air inlet section 33 is used for introducing the gas uniformly mixed in the mixed gas pipe 5 into the at least two gas distribution pipe sections 32; the gas distribution pipe section 32 is provided with a plurality of gas outlets 31 for releasing the uniformly mixed gas into the cavity through the plurality of gas outlets. That is, after the gas is uniformly mixed by the gas mixing pipe 5, the gas enters the gas inlet section 33 and is discharged through the plurality of gas outlets 31 on the at least two gas distribution pipe sections 32 communicated with the gas inlet section 33. Wherein, at least two gas distribution pipe sections 32 are provided with a plurality of gas outlet holes facing the target 2 only at the part positioned in the cavity 11.
Alternatively, the air intake section 33 may be provided outside the housing 1 or on the housing 1 or in the cavity 11.
When the air inlet section 33 is disposed outside the casing 1, one part of the at least two air distribution pipe sections 32 is located outside the casing 1, and the other part is located inside the casing 1. The air outlet hole 31 is not provided at the outer portion of the housing 1, and a plurality of air outlet holes 31 are provided at the portion located at the inner portion of the housing 1.
When the air inlet section 33 is disposed on the housing 1 or in the cavity 11, at least two air distribution pipe sections 32 are completely located in the cavity 11. The air outlet 31 can be arranged at any position of the air distribution pipe section 32. The gas inlet pipe 3 is provided in the housing 1 or the cavity 11, and the flow distance of the mixed gas can be reduced.
In this embodiment, the spaced arrangement may be that the gas distribution pipe sections 32 and the target 2 are alternately arranged, and the gas outlet holes 31 on the gas distribution pipe sections 32 face the target 2. So that the gas can be more sufficiently released toward the target 2.
Optionally, at least two gas distribution pipe sections 32 are respectively disposed on two sides of the target 2. For example, two targets 2 are provided in the cavity 11, and three gas distribution pipe sections 32 are provided. And the gas distribution pipe sections 32 are arranged at two sides of the target material 2, namely the gas distribution pipe sections 32 and the target material 2 are alternately arranged. In this way, both sides of the target 2 have gas released towards the target 2, so that the gas release is more uniform.
The target 2 in this embodiment may be a rotatable target or a fixed target. The target may be cylindrical, rectangular, circular or other shape. Alternatively, a plurality of gas distribution pipe sections 32 can be respectively arranged on both sides of the target, so long as the area of the target which is covered by the gas release area of the gas outlet holes 31 on the plurality of gas distribution pipe sections 32 on each side.
in the present embodiment, the gas distribution pipe section 32 is not limited to be disposed on both sides of the target 2, and may be disposed in other manners that enable gas to be uniformly released around the target. For example, four gas distribution pipe sections 32 are respectively provided around the target 2.
as an alternative embodiment, as shown in fig. 2, the gas inlet tube 3 may include a gas inlet section 33 and an annular gas distribution tube section 32 communicated with the gas inlet section 33, the gas inlet section 33 extends into the cavity 11, the annular gas distribution tube section 32 is located in the cavity 11, and the annular gas distribution tube section 32 is provided with a gas outlet facing the target 2.
In this embodiment, the annular gas distribution pipe is a gas distribution pipe section in which the gas inlet and the gas outlet are both communicated with the gas inlet section 33. The air inlet pipe 3 comprises an air inlet section 33 and an annular air distribution pipe section 32, the air inlet section 33 extends into the cavity 11, and the annular air distribution pipe section 32 is located in the cavity 11, so that the release of air from the outside of the cavity 11 is avoided. That is, after the gas mixture pipe 5 mixes the gas uniformly, the gas enters the gas inlet section 33 and is discharged through the plurality of gas outlets 31 on the annular gas distribution pipe section 32 communicated with the gas inlet section 33. The annular gas distribution pipe section 32 can save the material of the gas distribution pipe section and can release the gas in the cavity 11 more uniformly.
Alternatively, the annular gas distribution pipe section 32 may be disposed around the target 2.
The target 2 in this embodiment may be a rotatable target or a fixed target. The target may be cylindrical, rectangular, circular or other shape. The pattern defined by the annular gas distribution pipe sections 32 in this embodiment may be a pattern matching the shape of the target, for example, the pattern defined by the gas distribution pipe sections 32 of a rectangular target is a rectangle. In addition, in this embodiment, at least two annular gas distribution pipe sections may be disposed around the target. So long as at least the area of the gas outlet holes 31 of the annular gas distribution pipe section for releasing gas can cover the area of the target material.
The embodiments of the present invention have been described with reference to the accompanying drawings, but the present invention is not limited to the above-mentioned embodiments, which are only illustrative and not restrictive, and those skilled in the art can make many forms without departing from the spirit and scope of the present invention.
Claims (10)
1. A physical vapor deposition apparatus, comprising:
The device comprises a shell, a first electrode, a second electrode, a third electrode and a fourth electrode, wherein a cavity is formed in the shell, and a target material is arranged in the cavity;
And the part of the at least one air inlet pipe, which is positioned in the cavity, is provided with a plurality of air outlet holes facing the target material.
2. the physical vapor deposition apparatus of claim 1, wherein the plurality of gas outlets are equally spaced apart.
3. The physical vapor deposition apparatus of claim 1, wherein the plurality of gas outlets have a bore diameter that gradually increases in a direction of flow of the gas in the at least one gas inlet pipe.
4. The physical vapor deposition apparatus of claim 2 or 3, wherein the plurality of gas outlets have a pore size in the range of 1mm to 10mm and/or a pitch of the plurality of gas outlets is in the range of 5mm to 500 mm.
5. The physical vapor deposition apparatus of claim 1, further comprising: the first end of the mixed gas pipe is communicated with the at least two raw material gas input pipes, and the at least one gas inlet pipe is communicated with the second end of the mixed gas pipe.
6. the physical vapor deposition apparatus according to claim 1, wherein the gas inlet pipe includes a gas inlet section and at least two gas distribution pipe sections arranged at intervals, the gas inlet section merges with the at least two gas distribution pipe sections, the at least two gas distribution pipe sections extend into the cavity, and a portion of the at least two gas distribution pipe sections located in the cavity is provided with a plurality of gas outlet holes facing the target.
7. The physical vapor deposition apparatus according to claim 1, wherein the gas inlet pipe comprises a gas inlet section and an annular gas distribution pipe section communicated with the gas inlet section, the gas inlet section extends into the cavity, the annular gas distribution pipe section is located in the cavity, and the annular gas distribution pipe section is provided with a gas outlet facing the target.
8. The physical vapor deposition apparatus of claim 6 or 7, wherein the gas inlet section is disposed outside of the housing or on the housing or within the cavity.
9. The physical vapor deposition apparatus according to claim 6, wherein the at least two gas distribution pipe segments are respectively disposed on two sides of the target.
10. The physical vapor deposition apparatus of claim 7, wherein the annular gas distribution tube segment is disposed around the target.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822155633.6U CN209798087U (en) | 2018-12-21 | 2018-12-21 | Physical vapor deposition equipment |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822155633.6U CN209798087U (en) | 2018-12-21 | 2018-12-21 | Physical vapor deposition equipment |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209798087U true CN209798087U (en) | 2019-12-17 |
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Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201822155633.6U Active CN209798087U (en) | 2018-12-21 | 2018-12-21 | Physical vapor deposition equipment |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN209798087U (en) |
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2018
- 2018-12-21 CN CN201822155633.6U patent/CN209798087U/en active Active
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| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CP01 | Change in the name or title of a patent holder | ||
| CP01 | Change in the name or title of a patent holder |
Address after: 100176 Beijing Daxing District Beijing economic and Technological Development Zone Rongchang East Street 7 hospital 6 Building 3001 room. Patentee after: Beijing Dingrong Photovoltaic Technology Co.,Ltd. Address before: 100176 Beijing Daxing District Beijing economic and Technological Development Zone Rongchang East Street 7 hospital 6 Building 3001 room. Patentee before: BEIJING APOLLO DING RONG SOLAR TECHNOLOGY Co.,Ltd. |
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| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20210401 Address after: Room 201, Building A, 1 Qianwan Road, Qianhai Shenzhen-Hong Kong Cooperation Zone, Shenzhen, Guangdong Province Patentee after: Shenzhen Zhengyue development and Construction Co.,Ltd. Address before: 100176 Beijing Daxing District Beijing economic and Technological Development Zone Rongchang East Street 7 hospital 6 Building 3001 room. Patentee before: Beijing Dingrong Photovoltaic Technology Co.,Ltd. |
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| TR01 | Transfer of patent right | ||
| TR01 | Transfer of patent right |
Effective date of registration: 20210831 Address after: No.66210, 3rd floor, Pudong Free Trade Zone, Shanghai, China Patentee after: Shanghai zuqiang Energy Co.,Ltd. Address before: Room 201, Building A, 1 Qianwan Road, Qianhai Shenzhen-Hong Kong Cooperation Zone, Shenzhen, Guangdong Province Patentee before: Shenzhen Zhengyue development and Construction Co.,Ltd. |