CN209786153U - Metamaterial adjustable capacitor structure - Google Patents
Metamaterial adjustable capacitor structure Download PDFInfo
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- CN209786153U CN209786153U CN201920823359.7U CN201920823359U CN209786153U CN 209786153 U CN209786153 U CN 209786153U CN 201920823359 U CN201920823359 U CN 201920823359U CN 209786153 U CN209786153 U CN 209786153U
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Abstract
The utility model discloses an adjustable capacitor structure of metamaterial, including first base plate, second base plate, the metamaterial dielectric layer is located the metal floor layer between first base plate and the metamaterial dielectric layer, is located the gap and the isolation hole of the periodic arrangement on the metal floor layer, is located microstrip line between second base plate and the metamaterial dielectric layer, the loaded minor matters of period, offset line and choke festival on the microstrip line, is located two feed ends at microstrip line both ends. The capacitance value of the variable dielectric constant metamaterial capacitor is adjusted by controlling the voltage applied to the bias line, and the functions of time-frequency response, frequency selection, phase shift control, transmission matching and the like based on the variable capacitance structure are achieved. The utility model discloses variable capacitance structure size and bias circuit have effectively been reduced to radio frequency signal's reposition of redundant personnel decay to the quality factor of this structure has been improved, and to a great extent has solved miniaturized, the batchization of radio frequency microwave device and antenna, has integrated and the low cost difficult problem, has also increased more degrees of freedom for the antenna design simultaneously.
Description
Technical Field
The utility model relates to a move looks ware and antenna technical field, especially relevant with continuous simulation metamaterial adjustable capacitor.
Background
The tunable capacitor is a capacitor with capacitance adjustable in a certain range, and is widely applied to the technical fields of time-frequency response, frequency selection, phase shift control, transmission matching and the like, and particularly, a method for realizing a phase shifter based on a tunable capacitor structure becomes a technical hotspot.
The phase shifter is widely applied to a plurality of radio frequency devices such as a phased array antenna, a phase modulator, a harmonic distortion canceller and the like, and in order to obtain a better application effect, higher requirements such as miniaturization, light weight, small insertion loss, good flatness in the whole working bandwidth, large phase shifting range, wide working bandwidth, good input/output port matching, low power consumption, low cost and the like are also put forward on the performance of the phase shifter.
The existing phase shifters have many implementation modes, but have certain application limitations. The active phase shifter has large power consumption and limited application scenes. Among passive phase shifters, the switching type phase shifters based on PIN diodes, CMOS, MEMS, etc. cannot achieve continuous adjustment of the phase, and are limited in application scenarios requiring miniaturization and high phase shift accuracy; a reflection-type or variable capacitor-type phase shifter based on a varactor diode may reduce a figure of merit (FOM) due to an increase in insertion loss when applied at high frequencies, affecting performance indexes. In recent years, with the development of material science, metamaterial variable capacitor type phase shifters based on ferroelectric thin film BST, liquid crystal and the like have wide application prospects and are receiving more and more attention in the design research of the phase shifter due to large adjustable range of dielectric constant or higher quality factor, and there are also many related patent applications, such as a plane phased array antenna (201280058131.4), a liquid crystal phase shifter and antenna (201810548743.0), a liquid crystal phase shifter and electronic equipment (201810333111.2), MULTI-layer SOFTWARE antenna DEFINED ANTENNA AND METHOD antenna (US 20180062266) and the like which can be electronically operated, but the existing design has longer transmission line length for realizing 360-degree phase shift, thereby bringing the problems of larger size of the phase shifter, lower FOM and the like, being not beneficial to the miniaturization and integration of radio frequency microwave devices and antennas, simultaneously reducing the degree of freedom of antenna design, being not beneficial to realizing the MULTI-polarization working capability of the antenna, the design difficulty and the processing difficulty of the feed network are increased; in addition, no better solution is provided for how to minimize the influence of a bias circuit for adjusting the dielectric constant of the metamaterial dielectric layer on radio frequency signals.
SUMMERY OF THE UTILITY MODEL
For overcoming the not enough of prior art, the utility model provides an adjustable capacitor structure based on metamaterial structure, this structure has effectively reduced variable capacitance structure size and bias circuit to radiofrequency signal's reposition of redundant personnel decay to improved the quality factor of this structure, to a great extent solved the miniaturation of radio frequency microwave device and antenna, batchization, integrated and low cost difficult problem, also increased more degrees of freedom simultaneously for the antenna design.
The utility model provides a technical scheme that above-mentioned problem adopted is:
A metamaterial tunable capacitor structure, comprising:
The metamaterial unit comprises a first substrate (102), a second substrate (103) and a metamaterial dielectric layer (107) located between the first substrate (102) and the second substrate (103), wherein the first substrate and the second substrate are arranged oppositely;
A metal floor layer (104) positioned between the first substrate (102) and the metamaterial dielectric layer (107); the metal floor layer (104) is provided with at least 2 gaps (105) which are periodically arranged;
a microstrip line (108) positioned between the second substrate (103) and the metamaterial dielectric layer (107), and a bias line (109) loaded on the microstrip line (108).
Preferably, the microstrip line (108) is provided with periodically loaded branches (202) and two feeding ends (111) and (112).
Preferably, the metamaterial dielectric layer is composed of one or more layers of dielectric constant adjustable materials and can be a liquid crystal material or a ferroelectric thin film material.
preferably, the structure further comprises:
The metal floor layer (104) is also provided with an isolation hole (106), and the bias line (109) is further loaded with a choke section (110).
Preferably, the slot (105) may be centered with respect to the microstrip line (108), may also be offset from the microstrip line (108) by a distance, may be uniformly and periodically arranged, may also be non-uniformly and periodically arranged, may be uniformly and symmetrically arranged, may also be uniformly and crosswise arranged, and may also be non-uniformly and symmetrically arranged or crosswise arranged.
Preferably, the isolation holes (106) can be rectangular, circular, triangular or rhombic; the isolation hole (106) may be a single hole or a plurality of holes connected in series along the bias line.
Preferably, the choke (110) may be fan-shaped, triangular, linear or rectangular; the choke (110) can be one, or a plurality of choke joints distributed on the same side or two sides of the bias line.
Preferably, the branches (202) can be arranged in a cross way or in a non-cross way; the branches (202) can be equal to the gaps (105) in length or unequal in length; the branches (202) can be uniformly arranged or non-uniformly arranged; the branches (202) can be in one-to-one correspondence with the staggered gaps (105) or in non-one-to-one correspondence, and no gap (105) exists at the position where the branches (202) are opposite to the metal floor layer (104).
Preferably, the bias line (109) may also be loaded on the stub (202) of the microstrip line (108).
preferably, the arrangement directions of the microstrip lines (108) and the slots (105) may be linearly arranged, or 180-degree bent, or 90-degree bent; the slit (105) can be fan-shaped or rectangular; the arrangement of the gaps (105) may be uniform or non-uniform.
Compared with the prior art, the utility model, following beneficial effect has is:
(1) The utility model discloses make full use of cracks on the microstrip line floor and realizes the slow wave effect of microstrip line with the mode of loading minor matters on the microstrip line, reaches and effectively reduces and moves looks ware size and move purpose such as looks ware loss, has promoted the quality factor who moves the ware.
(2) The utility model discloses an adopt the bias line or the ITO (indium tin oxide) of high resistance value that have isolation hole and choking branch and knot, NiCr (nickel chromium) or some other resistivities are greater than 1 x 105The bias line made of the material of omega m effectively reduces the adverse effect of the bias circuit on the performance of the phase shifter and further improves the quality factor of the phase shifter; and the bias line with the isolation hole and the choke section can be integrally processed with the transmission line of the phase shifter, so that compared with the existing solution of the ITO bias line, the process flow is reduced, and the manufacturing cost is low.
drawings
various other advantages and benefits will become apparent to those of ordinary skill in the art upon reading the following detailed description of the preferred embodiments. The drawings are only for purposes of illustrating the preferred embodiments and are not to be construed as limiting the invention. Also, like reference numerals are used to refer to like parts throughout the drawings. In the drawings:
Fig. 1 is a side view of a metamaterial capacitor structure according to an embodiment 1 of the present invention;
Fig. 2(a) is a top view of the lower surface of the first substrate 102 based on the metamaterial tunable capacitor structure according to embodiment 1 of the present invention;
Fig. 2(b) is a top view of the upper surface of the second substrate 103 based on the metamaterial tunable capacitor structure according to the embodiment 1 of the present invention;
Fig. 2(c) is a top view of a tunable capacitor structure based on metamaterial according to an embodiment 1 of the present invention;
Fig. 3 is a side view of a tunable capacitor structure based on metamaterial according to an embodiment 2 of the present invention;
Fig. 4(a) is a top view of the lower surface of the first substrate 102 based on the metamaterial tunable capacitor structure according to embodiment 2 of the present invention;
Fig. 4(b) is a top view of the upper surface of the second substrate 103 based on the metamaterial tunable capacitor structure according to the embodiment 2 of the present invention;
Fig. 4(c) is a top view of a tunable capacitor structure based on metamaterial according to an embodiment 2 of the present invention;
Fig. 5 is a top view of a tunable capacitor structure based on metamaterial according to an embodiment 3 of the present invention;
FIG. 6(a) shows the present invention using ITO (indium tin oxide), NiCr (nickel chromium) or some other material with resistivity greater than 1 × 105a top view of a specific embodiment 1 of the bias line made of material of Ω · m;
FIG. 6(b) shows that the resistivity of the ITO (indium tin oxide), NiCr (nickel chromium) or other materials is larger than 1 × 105a top view of a specific embodiment 2 of the bias line made of material of Ω · m;
FIG. 6(c) shows that the resistivity of the ITO (indium tin oxide), NiCr (nickel chromium) or other materials is larger than 1 × 105A top view of a specific embodiment 3 of the bias line made of material of Ω · m;
Fig. 7 is a schematic view of an alternative shape of the isolation holes 106 in the floor layer 104 of the present invention;
fig. 8 is a schematic view of an alternative shape of the choke portion 110 of the present invention.
Detailed Description
Exemplary embodiments of the present disclosure will be described in more detail below with reference to the accompanying drawings. While exemplary embodiments of the present disclosure are shown in the drawings, it should be understood that the present disclosure may be embodied in various forms and should not be limited to the embodiments set forth herein. Rather, these embodiments are provided so that this disclosure will be thorough and complete, and will fully convey the scope of the disclosure to those skilled in the art.
Example 1
As shown in fig. 1, an embodiment of the present invention provides a tunable capacitor structure 101 based on meta-material, including: the antenna comprises a first substrate 102, a second substrate 103, a metamaterial dielectric layer 107 located between the first substrate 102 and the second substrate 103, a metal floor layer 104 located between the first substrate 102 and the metamaterial dielectric layer 107, at least 2 periodically arranged gaps 105 and isolation holes 106 located on the metal floor layer 104, a microstrip line 108, a bias line 109 and a choke section 110 located between the second substrate 103 and the metamaterial dielectric layer 107, and feed ends 111 and 112 located at two ends of the microstrip line 108.
Fig. 2(a), (b), and (c) are a top view of the lower surface of the first substrate 102, a top view of the upper surface of the second substrate 103, and a top view of the whole structure, respectively, according to an embodiment 1 of the present invention. In the structure, the gap 105 which is periodically arranged is formed at the position, opposite to the microstrip line 108, on the floor layer 104, so that a slow wave transmission structure is formed, a transmission path required for shifting the phase of 360 degrees in the metamaterial dielectric layer is shortened, the size of the whole structure is effectively reduced, and better FOM can be obtained.
The metal floor layer 104, the periodically arranged gaps 105, the metamaterial dielectric layer 107 and the microstrip line 108 jointly form a metamaterial tunable capacitor structure. The metamaterial dielectric layer 107 is made of one or more layers of dielectric constant adjustable materials, and can be liquid crystal, ferroelectric thin film BST and the like. The capacitance value of the metamaterial adjustable capacitor can be changed by adjusting the dielectric constant of the metamaterial dielectric layer, so that the phase shift quantity of the metamaterial phase shifter is changed. The bias line 109 for changing the dielectric constant of the metamaterial dielectric layer 107 is loaded on the microstrip line 108, in order to reduce the influence of the bias line 109 on the radio frequency signal, the isolation hole 106 is formed in the position, close to the microstrip line 108, of the bias line 109 on the floor layer 104, the phenomenon of radio frequency signal loss caused by transmission of the radio frequency signal along the bias line is effectively prevented by utilizing the principle that the impedance mutation causes the mismatch of the radio frequency transmission line, and meanwhile, the choke branch 110 is loaded on the bias line 109 within a certain distance from the microstrip line 108.
Based on the test result of a real prototype working at 12.25-12.75 Ghz of the liquid crystal metamaterial adjustable capacitor in the embodiment 1, the FOM is 90 degrees/dB, the area required by phase shift of 360 degrees is only 1mm multiplied by 30mm in the design that the thickness of a liquid crystal layer is only 5 mu m, and the index is superior to that of the existing similar phase shifter.
Example 2
as shown in fig. 3, an embodiment of the present invention provides a metamaterial tunable capacitor structure 201, including: the antenna comprises a first substrate 102, a second substrate 103, a metamaterial dielectric layer 107 located between the first substrate 102 and the second substrate 103, a metal floor layer 104 located between the first substrate 102 and the metamaterial dielectric layer 107, at least 2 periodically arranged gaps 105 and isolation holes 106 located on the metal floor layer 104, a microstrip line 108 located between the second substrate 103 and the metamaterial dielectric layer 107, periodically loaded branches 202 on the microstrip line 108, a bias line 109 and a choke node 110, and feeding ends 111 and 112 located at two ends of the microstrip line 108, wherein the first substrate 102 and the second substrate 103 are arranged oppositely.
Fig. 4(a), (b), and (c) are a top view of the lower surface of the first substrate 102, a top view of the upper surface of the second substrate 103, and a top view of the whole structure, respectively, according to an embodiment 2 of the present invention. In the structure, the positions, which are opposite to the microstrip line 108, on the floor layer 104 are provided with the gaps 105 which are periodically arranged and the branches 202 which are periodically loaded on the microstrip line 108, so that a slow wave transmission structure is formed together, a transmission path required for shifting the phase of 360 degrees in the metamaterial dielectric layer is shortened, the size of the phase shifter is effectively reduced, and better FOM can be obtained.
The metal floor layer 104, the periodically arranged gaps 105, the metamaterial dielectric layer 107 and the microstrip line 108 jointly form a metamaterial tunable capacitor structure. The metamaterial dielectric layer 107 is made of one or more layers of dielectric constant adjustable materials, and can be liquid crystal, ferroelectric thin film BST and the like. The capacitance value of the metamaterial adjustable capacitor can be changed by adjusting the dielectric constant of the metamaterial dielectric layer, so that the phase shift quantity of the metamaterial phase shifter is changed. The bias line 109 for changing the dielectric constant of the metamaterial dielectric layer 107 is loaded on the microstrip line 108 or the stub 202, in order to reduce the influence of the bias line 109 on the radio frequency signal, the isolation hole 106 is formed in the position, close to the microstrip line 108, of the bias line 109 on the floor layer 104, the phenomenon that the radio frequency signal is transmitted along the bias line to cause the loss of the radio frequency signal is effectively prevented by utilizing the principle that the impedance sudden change causes the mismatch of the radio frequency transmission line, and meanwhile, the choke stub 110 is loaded on the bias line 109 within a certain distance from the microstrip line 108.
Based on the test result of a real prototype working at 12.25-12.75 Ghz of the liquid crystal metamaterial adjustable capacitor in the embodiment 2, the FOM is 72 degrees/dB, the area required by the phase shift of 360 degrees is only 2.5mm multiplied by 3mm in the design that the thickness of a liquid crystal layer is only 5 mu m, and the index is superior to that of the existing similar phase shifter.
example 3
as shown in fig. 5, an embodiment of the present invention provides a metamaterial tunable capacitor 301, which is a curved connection structure extending on the basis of the metamaterial tunable capacitor 101 of embodiment 1, and this structure makes the routing arrangement of the phase shifter more flexible, and also better adapts to the routing arrangement of the phase shifter under different space conditions.
example 4
As shown in fig. 6(a), (b), (c), the bias lines 109 of the metamaterial tunable capacitors 101, 201, 301 according to embodiments of the present invention may be made of ITO (indium tin oxide), NiCr (nickel chromium), or some other material with a resistivity greater than 1 × 105The bias line 402 made of material of Ω · m. Using ITO (indium tin oxide), NiCr (nickel chromium) or some other material with resistivity greater than 1X 105when the bias line 402 is made of the material of Ω · m, the bias line structure may be in the form of the isolation hole 106 and the choke leg 110 as in embodiments 1, 2, or 3, or may be directly applied to the microstrip line 108 without the isolation hole 106 and the choke leg 110. At this time, the thickness of the bias line 402 may be 10 nm to 200 nm, and the effect of choke current reduction and attenuation can be achieved by reasonably controlling the thickness and sheet resistance of the plating layer of the bias line 402.
Example 5
as shown in fig. 7, the isolation holes 106 on the floor layer 104 may be rectangular holes, circular holes, triangular holes, rhombic holes, polygonal holes, etc.
Example 6
As shown in fig. 8, the choke section 110 may be a loading fan, a loading triangle, or other structures such as but not limited to a loading rectangle.
The above description is only for the preferred embodiment of the present invention, but the scope of the present invention is not limited thereto, and any changes or substitutions that can be easily conceived by those skilled in the art within the technical scope of the present invention should be covered by the present invention. Therefore, the protection scope of the present invention shall be subject to the protection scope of the claims.
Claims (10)
1. A metamaterial tunable capacitor structure, comprising:
The metamaterial unit comprises a first substrate (102), a second substrate (103) and a metamaterial dielectric layer (107) located between the first substrate (102) and the second substrate (103), wherein the first substrate and the second substrate are arranged oppositely;
A metal floor layer (104) positioned between the first substrate (102) and the metamaterial dielectric layer (107); the metal floor layer (104) is provided with at least 2 gaps (105) which are periodically arranged;
A microstrip line (108) positioned between the second substrate (103) and the metamaterial dielectric layer (107), and a bias line (109) loaded on the microstrip line (108).
2. the metamaterial tunable capacitor structure as claimed in claim 1, wherein the microstrip line (108) has periodically loaded stubs (202) and two feeding terminals (111) and (112).
3. the metamaterial tunable capacitor structure of claim 1, wherein the metamaterial dielectric layer is comprised of one or more layers of dielectric constant tunable material and may be a liquid crystal material or a ferroelectric thin film material.
4. the metamaterial tunable capacitor structure as claimed in claim 1, wherein the structure further comprises:
the metal floor layer (104) is also provided with an isolation hole (106), and the bias line (109) is further loaded with a choke section (110).
5. The metamaterial tunable capacitor structure as claimed in claim 1, wherein the slot (105) can be centered with respect to the microstrip line (108), can be offset from the microstrip line (108) by a distance, can be uniformly periodically arranged, can be non-uniformly periodically arranged, can be uniformly symmetrically arranged, can be uniformly cross-arranged, or can be non-uniformly symmetrically or cross-arranged.
6. metamaterial tunable capacitor structure as claimed in claim 4, characterized in that the isolation holes (106) can be rectangular, circular, triangular or diamond-shaped; the isolation hole (106) may be a single hole or a plurality of holes connected in series along the bias line.
7. metamaterial tunable capacitor structure as claimed in claim 4, characterized in that the choke (110) can be fan-shaped, triangular, linear or rectangular in shape; the choke (110) can be one, or a plurality of choke joints distributed on the same side or two sides of the bias line.
8. the metamaterial tunable capacitor structure of claim 2, wherein the branches (202) can be arranged in a cross-over arrangement or in a non-cross-over arrangement; the branches (202) can be equal to the gaps (105) in length or unequal in length; the branches (202) can be uniformly arranged or non-uniformly arranged; the branches (202) can be in one-to-one correspondence with the staggered gaps (105) or in non-one-to-one correspondence, and no gap (105) exists at the position where the branches (202) are opposite to the metal floor layer (104).
9. The metamaterial tunable capacitor structure of claim 2, wherein the bias line (109) is further loaded on a stub (202) of the microstrip line (108).
10. The metamaterial tunable capacitor structure as claimed in claim 1, wherein the microstrip line (108) and the slot (105) are arranged in a straight line, a 180-degree bend, or a 90-degree bend; the slit (105) can be fan-shaped or rectangular; the arrangement of the gaps (105) may be uniform or non-uniform.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920823359.7U CN209786153U (en) | 2019-06-03 | 2019-06-03 | Metamaterial adjustable capacitor structure |
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| CN201920823359.7U CN209786153U (en) | 2019-06-03 | 2019-06-03 | Metamaterial adjustable capacitor structure |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110197939A (en) * | 2019-06-03 | 2019-09-03 | 北京华镁钛科技有限公司 | A kind of Meta Materials adjustable condenser structure |
| CN114122645A (en) * | 2021-08-31 | 2022-03-01 | 北京华镁钛科技有限公司 | Low-loss phase shifter and liquid crystal antenna |
-
2019
- 2019-06-03 CN CN201920823359.7U patent/CN209786153U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN110197939A (en) * | 2019-06-03 | 2019-09-03 | 北京华镁钛科技有限公司 | A kind of Meta Materials adjustable condenser structure |
| CN110197939B (en) * | 2019-06-03 | 2024-04-19 | 北京华镁钛科技有限公司 | Metamaterial adjustable capacitor structure |
| CN114122645A (en) * | 2021-08-31 | 2022-03-01 | 北京华镁钛科技有限公司 | Low-loss phase shifter and liquid crystal antenna |
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