CN209747554U - Light emitting diode chip - Google Patents
Light emitting diode chip Download PDFInfo
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- CN209747554U CN209747554U CN201920603874.4U CN201920603874U CN209747554U CN 209747554 U CN209747554 U CN 209747554U CN 201920603874 U CN201920603874 U CN 201920603874U CN 209747554 U CN209747554 U CN 209747554U
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Abstract
The application provides a light emitting diode chip, when light was through being provided with the reflection configuration of different refracting indexes, the light that a plurality of first films and second film reflection return interfered because of the change of phase angle, combined together each other, obtained the intense reflection light. The reflected light is thereby returned from the first surface and reflected by the plurality of spaced apart reflective structures to effect a change in optical path such that light exits the side of the substrate to form side-facing light. Change the light-emitting direction and the intensity of the different light of incident angle through a plurality of reflection configuration, change the luminosity angle, make the forward light that is provided with reflection configuration department weaken, the light path of part forward light changes and forms side direction light, thereby weaken forward light, reinforcing side direction light, make forward light and side direction luminous intensity rational distribution, increase the light angle and the luminous aperture of emitting diode chip, thereby make the whole luminous distribution of straight following formula backlight unit of application end even, no bright area and dark space.
Description
Technical Field
The present application relates to the field of semiconductor technology, and more particularly, to a light emitting diode chip.
background
Light Emitting Diodes (LEDs) convert electrical energy into Light energy, which emits visible Light of various colors such as yellow, green, blue, and infrared and ultraviolet invisible Light. Compared with incandescent lamps and neon lamps, the LED has the advantages of low working voltage and current, high reliability, long service life, convenience in adjusting the luminous brightness and the like.
With the increasing approach of LED lamp market explosion, the research and development competition of LED packaging technology is also very intense. Currently, products using direct-type backlight of inverted Mini LED, such as full-screen mobile phone, tv screen, etc., are successively introduced in the market. The LED chip flip structure can solve the heat dissipation problem of the LED chip forward mounting structure due to current crowding. However, the light intensity of the traditional flip-chip LED chip is mainly concentrated on the forward light emitted from the surface of the substrate, and the lateral light emitted from the chip is weak, which results in unreasonable distribution of the forward light and the lateral light intensity, and thus the light intensity of the whole backlight plate is not uniformly distributed after the direct-type backlight chip is arranged, and bright spots and dark areas appear.
SUMMERY OF THE UTILITY MODEL
Therefore, it is necessary to provide a rational distribution of forward light and lateral light for the LED chips with uniform light distribution without bright spots and dark areas in the backlight plate, so as to solve the problem of unreasonable distribution of forward light and lateral light intensity of the conventional flip LED chips.
The application provides a light emitting diode chip, which comprises a substrate and a plurality of reflecting structures. The substrate is provided with a first surface and a second surface which are opposite, and the second surface is sequentially provided with an N-type semiconductor layer, a light emitting layer and a P-type semiconductor layer. The plurality of reflecting structures are arranged on the first surface at intervals, each reflecting structure comprises at least one first thin film and at least one second thin film, the first thin films and the second thin films are alternately arranged on the first surface, and the refractive index of the first thin films is different from that of the second thin films.
in one embodiment, the first thin films and the second thin films are alternately arranged on the first surface in sequence, and the refractive index of the first thin films is larger than that of the second thin films.
In one embodiment, the reflective structure is a distributed bragg reflector.
In one embodiment, the first thin film is titanium oxide such as titanium monoxide, titanium dioxide, titanium pentoxide, or any combination thereof.
in one embodiment, the second film is silicon dioxide, silicon nitride, or any combination thereof.
In one embodiment, the first thin film has a thickness of 30 nm to 80 nm.
in one embodiment, the second film has a thickness of 15 nm to 140 nm.
In one embodiment, the surface of the reflective structure remote from the first surface is square or circular in shape.
in one embodiment, the light emitting diode chip further comprises an N-type electrode, a P-type electrode and a distributed Bragg layer. The N-type electrode is arranged on an N-type semiconductor table surface of the N-type semiconductor layer. The P-type electrode is arranged on the surface of the P-type semiconductor layer far away from the light emitting layer. The distributed Bragg layer is arranged on the surface, far away from the substrate, of the N-type semiconductor layer and the surface, far away from the light-emitting layer, of the P-type semiconductor layer, and exposes the N-type electrode and the P-type electrode.
in one embodiment, the light emitting diode chip further includes an N-type electrode pad and a P-type electrode pad. The N-type electrode pad is arranged on the surface of the N-type electrode and used for realizing electric connection. The P-type electrode pad is arranged on the surface of the P-type electrode and used for realizing electric connection.
When the light emitted by the light emitting layer is emitted to the first surface, the light can be reflected at interfaces of different media, and the size of the reflectivity is related to the refractive indexes of the first thin film and the second thin film. Meanwhile, when light passes through the films with different refractive indexes, the light reflected by the first films and the light reflected by the second films interfere with each other due to the change of the phase angle, and are combined with each other, the optical performance is enhanced, strong reflected light is obtained, and only weak refracted light is emitted from the reflecting structure. Thereby, the reflected light formed by combining with each other is returned from the first surface, and the light path is changed by the reflection of the plurality of reflection structures arranged at intervals, so that the light emitted by the light emitting layer is emitted from the side surface of the substrate by the reflection of the plurality of reflection structures, and the side light is formed.
meanwhile, the plurality of reflection structures are arranged on the first surface at intervals, so that the light emitting direction and the light intensity of light with different incident angles can be changed, the light angle is changed, forward light (light emitted from the first surface of the substrate is called forward light) at the position where the reflection structures are arranged is weakened, the light path of partial forward light is changed to form lateral light, the forward light is weakened, the lateral light is enhanced, the forward light and the lateral light intensity are reasonably distributed, the light angle and the light emitting aperture of the light emitting diode chip are increased, and the whole light emitting distribution of the direct type backlight plate at the application end is uniform, and no bright area and no dark area exist.
Drawings
Fig. 1 is a schematic view of an overall structure of a light emitting diode chip provided in the present application;
fig. 2 is a schematic view of a reflection structure of a light emitting diode chip provided in the present application;
Fig. 3 is a thickness data graph of a 7-layer, 14-layer, 20-layer structure of thin films for the reflective structure provided herein;
Fig. 4 is a spectrum bandwidth curve of a structure with 7, 14, and 20 layers of thin films in the reflective structure provided in the present application;
FIG. 5 is a graph of light intensity and angular distribution of light intensity for a 7, 14, 20 layer film structure for a reflective structure provided herein;
Fig. 6 is a schematic top view of a plurality of reflection structures on the first surface of the led chip provided in the present application.
Description of the reference numerals
the light emitting diode chip comprises a light emitting diode chip 100, a substrate 10, a first surface 110, a second surface 120, an N-type semiconductor layer 20, a light emitting layer 30, a P-type semiconductor layer 40, a reflection structure 80, a first thin film 810, a second thin film 820, an N-type electrode 510, a P-type electrode 520, a distributed Bragg layer 60, an N-type electrode pad 710 and a P-type electrode pad 720.
Detailed Description
In order to make the objects, technical solutions and advantages of the present application more apparent, the present application is further described in detail below by way of embodiments and with reference to the accompanying drawings. It should be understood that the specific embodiments described herein are merely illustrative of the present application and are not intended to limit the present application.
The numbering of the components as such, e.g., "first", "second", etc., is used herein only to distinguish the objects as described, and does not have any sequential or technical meaning. The term "connected" and "coupled" when used in this application, unless otherwise indicated, includes both direct and indirect connections (couplings). In the description of the present application, it is to be understood that the terms "upper", "lower", "front", "rear", "left", "right", "vertical", "horizontal", "top", "bottom", "inner", "outer", "clockwise", "counterclockwise", and the like, indicate orientations or positional relationships based on those shown in the drawings, and are used only for convenience in describing the present application and for simplicity in description, and do not indicate or imply that the devices or elements referred to must have a particular orientation, be constructed in a particular orientation, and be operated, and thus, are not to be considered as limiting the present application.
In this application, unless expressly stated or limited otherwise, the first feature "on" or "under" the second feature may be directly contacting the first and second features or indirectly contacting the first and second features through intervening media. Also, a first feature "on," "over," and "above" a second feature may be directly or diagonally above the second feature, or may simply indicate that the first feature is at a higher level than the second feature. A first feature being "under," "below," and "beneath" a second feature may be directly under or obliquely under the first feature, or may simply mean that the first feature is at a lesser elevation than the second feature.
Referring to fig. 1-2, the present application provides a light emitting diode chip 100 including a substrate 10 and a plurality of reflective structures 80. The substrate 10 has a first surface 110 and a second surface 120 opposite to each other, and the second surface 120 is sequentially provided with an N-type semiconductor layer 20, a light emitting layer 30 and a P-type semiconductor layer 40. The plurality of reflective structures 80 are disposed at intervals on the first surface 110, each of the reflective structures 80 includes at least one first thin film 810 and at least one second thin film 820, the first thin films 810 and the second thin films 820 are alternately disposed on the first surface 110, and a refractive index of the first thin film 810 is different from a refractive index of the second thin film 820.
Each of the reflective structures 80 includes a plurality of the first thin films 810 and the second thin films 820 alternately arranged. And, the refractive index of the first thin film 810 is different from the refractive index of the second thin film 820. When light emitted from the light emitting layer 30 is emitted to the first surface 110 through the N-type semiconductor layer 20 and the substrate 10, the light is reflected at an interface of different mediums, and the reflectivity is related to the refractive indexes of the first thin films 810 and the second thin films 820. Meanwhile, each of the reflective structures 80 includes a plurality of the first thin films 810 and the second thin films 820 alternately arranged, when light passes through the thin films having different refractive indexes, the light reflected by the plurality of the first thin films 810 and the second thin films 820 interferes due to a change in phase angle, and combines with each other, so that the optical performance is enhanced to obtain strongly reflected light, and at this time, only weak refracted light exits from the reflective structure 80. Thereby, the reflected light formed by combining with each other is returned from the first surface 110, and reflected by the plurality of reflective structures 80 arranged at intervals to change the light path, so that the light emitted from the light-emitting layer 30 is emitted from the side of the substrate 10 by the reflection of the plurality of reflective structures 80, and forms side light.
Meanwhile, the plurality of the reflection structures 80 are arranged on the first surface 110 at intervals, so that the light emitting direction and the intensity of light with different incident angles can be changed, and the light angle can be changed, so that forward light (light emitted from the first surface 110 of the substrate 10 is referred to as forward light) at the position where the reflection structures 80 are arranged is weakened, the light path of part of the forward light is changed to form lateral light, and thus the forward light is weakened, the lateral light is enhanced, and the forward light and the lateral light intensity are reasonably distributed.
Therefore, the reflecting structure 80 can change the direction of part of the forward light on the light-emitting surface of the substrate 10, and the part of the forward light is emitted from the side surface of the substrate 10, so that the intensities of the forward light and the side light of the led chip 100 are reasonably distributed as required, and the light angle and the light aperture of the led chip 100 are increased, so that the direct-type backlight plate at the application end has uniform overall light emission distribution without bright areas and dark areas.
in one embodiment, the first thin films 810 and the second thin films 820 are alternately disposed on the first surface 110 in sequence, and the refractive index of the first thin films 810 is greater than that of the second thin films 820.
The substrate may be a sapphire substrate, the first thin film 810 has a high refractive index, and the second thin film 820 has a low refractive index, so that a refractive index gradient can be formed by alternately arranging the high refractive index and the low refractive index, and when light passes through thin films with different refractive indexes, light reflected from each thin film interferes due to a change of a phase angle and is combined with each other, so that strong reflected light can be obtained.
The first thin film 810 has a high refractive index, and may be titanium oxide such as titanium monoxide, titanium dioxide, or titanium pentoxide, or any combination thereof. The second thin film 820 is low refractive index and may be silicon dioxide, silicon nitride, or any combination thereof.
In one embodiment, the reflective structure 80 may be a distributed bragg reflector.
In one embodiment, the first thin film 810 has a thickness of 30 nm to 80 nm. The thickness of the second thin film 820 is 15 nm to 140 nm.
Since the nano-scale thin film has a nano-effect, which causes a change in material properties, the thicknesses of the first thin film 810 and the second thin film 820 have an effect on refractive indexes thereof. In the present application, by setting the thickness of the first thin film 810 and the thickness of the second thin film 820, the characteristics of the reflective structure 80 can be changed by the thickness and the number of layers of the first thin film 810 and the thickness and the number of layers of the second thin film 820. Therefore, the plurality of the reflective structures 80 of the led chip 100 change the light emitting direction and intensity of light with different incident angles, and change the light angle, so that the forward light (the light emitted from the first surface 110 of the substrate 10 is referred to as forward light) at the position where the reflective structure 80 is disposed is weakened, the light path of a portion of the forward light is changed to form side light, and thus the forward light is weakened, the side light is strengthened, and the forward light and the side light intensity are reasonably distributed.
referring to fig. 3-5, 7 layers represent a structure in which the first thin film 810 and the second thin film 820 are alternately disposed on the first surface 110 (light emitting surface) with 7 layers. The 14 layers represent a structure in which the first thin film 810 and the second thin film 820 are alternately disposed on the first surface 110 (light emitting surface) with 14 layers. The 20 layers represent a structure in which the first thin film 810 and the second thin film 820 are alternately disposed on the first surface 110 (light emitting surface) with 20 layers. The thicknesses of the plurality of first thin films 810 in the reflective structure 80 may be the same or different, and the thicknesses of the plurality of second thin films 820 may be the same or different.
As can be seen from the bandwidth curve of fig. 4 and the light angle and light intensity distribution of fig. 5, when the same wavelength is used, the reflectivity of the reflective structure 80 is different for different layers. Therefore, according to the requirements of the light intensity and the light angle of the forward light and the lateral light, different layers of the reflecting structure 80 are arranged to meet different required bandwidths and different reflectivities, so that the light emitting direction and the light intensity of the light with different incident angles can be changed, and the light angle can be changed. Meanwhile, it can be seen that the more the number of the layers of the film is, the weaker the forward light is, more forward light can change the light path to become lateral light, the light angle can be increased, and the bandwidth can be widened. So that the forward light (the light emitted from the first surface 110 of the substrate 10 is referred to as forward light) at the position where the reflecting structure 80 is arranged is weakened, the optical path of part of the forward light is changed to form side light, so that the forward light is weakened, and the side light is strengthened, so that the forward light and the side light intensity are reasonably distributed.
Referring to fig. 6, in an embodiment, the surface of each of the reflective structures 80 away from the first surface 110 is square or circular, and each of the reflective structures 80 may be uniformly spaced on the first surface 110, so that the forward light emitted from the first surface 110 is uniformly distributed, and the overall light emission distribution of the direct-lit backlight panel for an application end is uniform.
In one embodiment, the led chip 100 further includes an N-type electrode 510, a P-type electrode 520, a distributed bragg layer 60, an N-type electrode pad 710, and a P-type electrode pad 720. The N-type electrode 510 is disposed on an N-type semiconductor mesa of the N-type semiconductor layer 20. The P-type electrode 520 is disposed on a surface of the P-type semiconductor layer 40 away from the light-emitting layer 30. The distributed bragg layer 60 is disposed on a surface of the N-type semiconductor layer 20 away from the substrate 10 and a surface of the P-type semiconductor layer 40 away from the light emitting layer 30, and exposes the N-type electrode 510 and the P-type electrode 520. The N-type electrode pad 710 is disposed on the surface of the N-type electrode 510 for electrical connection. The P-type electrode pad 720 is disposed on the surface of the P-type electrode 520 for electrical connection.
The substrate 10 is made of a light-transmitting material, and may be sapphire, silicon carbide (SiC), or zinc oxide (ZnO).
In one embodiment, the present application provides a method for manufacturing the light emitting diode chip 100, including the following steps:
S10, providing the substrate 10, and sequentially preparing the N-type semiconductor layer 20, the light emitting layer 30 and the P-type semiconductor layer 40 on the second surface 120 of the substrate 10 to form an LED wafer;
S20, preparing the N-type electrode 510 and the P-type electrode 520 on the P-type semiconductor layer 40 and the N-type semiconductor layer 20, respectively, of the LED wafer; the N-type electrode 510 and the P-type electrode 520 may be highly reflective metal layers, such as aluminum or other metals.
S30, depositing and preparing the distributed Bragg layer 60;
S40, preparing the N-type electrode pad 710 and the P-type electrode pad 720 on the surfaces of the N-type electrode 510 and the P-type electrode 520; the N-type electrode pad 710 and the P-type electrode pad 720 are made of aluminum or other metals with high reflectivity;
s50, grinding after preparation;
S60, after grinding, depositing a reflective layer (a special film) on the first surface 110 (i.e., the light-emitting surface) of the substrate 10 by using an E-Beam machine or a splitter machine under a high temperature or a low temperature condition, wherein particles or a target material may be selected during deposition;
S70, spin-coating a photoresist on the surface of the reflective layer far from the substrate 10 according to the pattern of the reflective layer, then performing Inductively Coupled Plasma (ICP) etching, and removing the photoresist to form a plurality of reflective structures 80 arranged at intervals, wherein the pattern of the reflective layer may be a circular pattern, a square pattern, or the like;
In the step S70, the light output amount of the first surface 110 (i.e., the light output surface) is controlled by controlling the area ratio of the etching pattern, and when the ratio is large, the light output ratio of the front surface of the light output surface is also increased, which can be designed according to actual requirements.
and S8, cutting to form the LED chip 100.
The plurality of the reflection structures 80 of the led chip 100 can be prepared by the preparation method of the led chip 100, the forward light and the lateral light intensity of the first surface 110 (i.e. the light emitting surface) are reasonably distributed, the light emitting aperture and the luminosity angle of the led chip 100 are increased, and the backlight panel at the application end has uniform light emitting distribution and no bright spots or dark areas.
the application chip can be suitable for other application chips except the Mini LED, which need to change the light intensity of the front side of the light-emitting surface and the side direction of the light-emitting surface, and can also be suitable for other types of flip LED chips.
The technical features of the embodiments described above may be arbitrarily combined, and for the sake of brevity, all possible combinations of the technical features in the embodiments described above are not described, but should be considered as being within the scope of the present specification as long as there is no contradiction between the combinations of the technical features.
The above-mentioned embodiments only express several embodiments of the present application, and the description thereof is more specific and detailed, but not construed as limiting the scope of the present application. It should be noted that, for a person skilled in the art, several variations and modifications can be made without departing from the concept of the present application, which falls within the scope of protection of the present application. Therefore, the protection scope of the present patent shall be subject to the appended claims.
Claims (10)
1. A light emitting diode chip, comprising:
the light-emitting diode comprises a substrate (10) with a first surface (110) and a second surface (120) which are opposite, wherein the second surface (120) is sequentially provided with an N-type semiconductor layer (20), a light-emitting layer (30) and a P-type semiconductor layer (40);
A plurality of reflective structures (80) spaced apart from the first surface (110), each of the reflective structures (80) including at least one first thin film (810) and at least one second thin film (820), the first thin films (810) and the second thin films (820) being alternately disposed on the first surface (110), a refractive index of the first thin film (810) being different from a refractive index of the second thin film (820).
2. The light emitting diode chip of claim 1, wherein the first thin films (810) and the second thin films (820) are alternately disposed on the first surface (110) in sequence, and a refractive index of the first thin films (810) is greater than a refractive index of the second thin films (820).
3. The light-emitting diode chip as claimed in claim 1, characterized in that the reflective structure (80) is a distributed bragg reflector.
4. The light-emitting diode chip as claimed in claim 2, wherein the first thin film (810) is titanium oxide such as titanium monoxide, titanium dioxide, titanium pentoxide, or any combination thereof.
5. the light-emitting diode chip as claimed in claim 2, characterized in that the second film (820) is silicon dioxide, silicon nitride or any combination.
6. the light-emitting diode chip as claimed in claim 1, characterized in that the first film (810) has a thickness of 30 nm to 80 nm.
7. the light-emitting diode chip as claimed in claim 6, characterized in that the second film (820) has a thickness of 15 nm to 140 nm.
8. The light-emitting diode chip as claimed in claim 1, characterized in that the surface of the reflective structure (80) remote from the first surface (110) is square or round in shape.
9. The light emitting diode chip of claim 1, further comprising:
An N-type electrode (510) disposed on an N-type semiconductor mesa of the N-type semiconductor layer (20);
The P-type electrode (520) is arranged on the surface of the P-type semiconductor layer (40) far away from the light-emitting layer (30);
And the distributed Bragg layer (60) is arranged on the surface of the N-type semiconductor layer (20) far away from the substrate (10) and the surface of the P-type semiconductor layer (40) far away from the light-emitting layer (30), and exposes the N-type electrode (510) and the P-type electrode (520).
10. The light emitting diode chip of claim 9, further comprising:
The N-type electrode pad (710) is arranged on the surface of the N-type electrode (510) and used for realizing electric connection;
And the P-type electrode pad (720) is arranged on the surface of the P-type electrode (520) and used for realizing electric connection.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920603874.4U CN209747554U (en) | 2019-04-29 | 2019-04-29 | Light emitting diode chip |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920603874.4U CN209747554U (en) | 2019-04-29 | 2019-04-29 | Light emitting diode chip |
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| CN209747554U true CN209747554U (en) | 2019-12-06 |
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Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111883626A (en) * | 2020-06-11 | 2020-11-03 | 淮安澳洋顺昌光电技术有限公司 | Flip-chip light-emitting diode capable of changing forward light intensity and lateral light intensity and preparation method thereof |
| CN113871522A (en) * | 2021-12-02 | 2021-12-31 | 江西省兆驰光电有限公司 | Lamp bead module, backlight module and electronic equipment |
| CN113903845A (en) * | 2021-08-25 | 2022-01-07 | 华灿光电（浙江）有限公司 | Micro light-emitting diode chip and preparation method thereof |
-
2019
- 2019-04-29 CN CN201920603874.4U patent/CN209747554U/en active Active
Cited By (5)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111883626A (en) * | 2020-06-11 | 2020-11-03 | 淮安澳洋顺昌光电技术有限公司 | Flip-chip light-emitting diode capable of changing forward light intensity and lateral light intensity and preparation method thereof |
| CN113903845A (en) * | 2021-08-25 | 2022-01-07 | 华灿光电（浙江）有限公司 | Micro light-emitting diode chip and preparation method thereof |
| CN113903845B (en) * | 2021-08-25 | 2023-12-22 | 华灿光电（浙江）有限公司 | Micro light-emitting diode chip and preparation method thereof |
| CN113871522A (en) * | 2021-12-02 | 2021-12-31 | 江西省兆驰光电有限公司 | Lamp bead module, backlight module and electronic equipment |
| CN113871522B (en) * | 2021-12-02 | 2022-03-22 | 江西省兆驰光电有限公司 | Lamp bead module, backlight module and electronic equipment |
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