CN209731098U - A kind of plasma power supply IGBT copped wave rectification unit modular structure - Google Patents

A kind of plasma power supply IGBT copped wave rectification unit modular structure Download PDF

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Publication number
CN209731098U
CN209731098U CN201920808843.2U CN201920808843U CN209731098U CN 209731098 U CN209731098 U CN 209731098U CN 201920808843 U CN201920808843 U CN 201920808843U CN 209731098 U CN209731098 U CN 209731098U
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bar
igbt
copped wave
radiator
copper bus
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江之奎
罗军
邓永波
谭兴川
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Chengdu General Rectification Electric Appliance Research Institute
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Chengdu General Rectification Electric Appliance Research Institute
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Abstract

The utility model discloses a kind of plasma power supply IGBT copped wave rectification unit modular structures, it includes two IGBT modules, two IGBT modules are electrically connected with stack bus bar, and stack bus bar is electrically connected with current Hall sensor and two direct current film support filter capacitors;Two IGBT modules, two direct current film support filter capacitors, stack bus bars are installed on a heat sink, and radiator passes through special-shaped air duct and connect with blower, and blower and radiator are respectively mounted on the rack.This programme is electrically connected by two IGBT modules and two direct current film support filter capacitors with stack bus bar, and two IGBT modules is made to form parallel connection, guarantees the equal properties of flow of DC side commutation circuit, and guarantees the equal properties of flow of copped wave outlet side.Cold air is pumped into radiator by blower, takes away the heat of two pieces of IGBT modules, can cool down the direct current support capacitor of radiator air outlet;Avoid because IGBT module temperature it is excessively high caused by failure.

Description

A kind of plasma power supply IGBT copped wave rectification unit modular structure
Technical field
The utility model relates to plasma power supply technical fields, and in particular to a kind of plasma power supply IGBT copped wave rectification Unit module structure.
Background technique
In full frequency, full power state, IGBT temperature is very high, especially for dangerous waste incineration firing plasma power supply long-term work In high temperature season, IGBT temperature rise can reach 90 DEG C or more, work long hours and will increase the failure rate of IGBT module, reduce copped wave function The service life of rate module.IGBT is rationally efficiently utilized, reducing its calorific value becomes the most important thing.
With the remodeling of dangerous waste incineration firing plasma generator, the output capacity of the plasma power supply used it is continuous It is promoted.Currently, the general complete machine for constituting separate unit high power density in the form of power semiconductor is in parallel;Power semiconductor Device IGBT module is directly in parallel, due to circuit work and high frequency 10KHZ or so, the distributed inductance of the IGBT module of each work There are larger differences, cannot achieve the sharing control of each module, and radiator cooling air is uneven in addition, so as to cause parallel connection Power semiconductor temperature is inconsistent, and then influences it and flow effect, and the IGBT module for causing temperature high when serious is damaged first It is bad;Circuit topological structure such as is designed by the way of more power cell copped wave rectification modules (N+1) in parallel, can easily solve power supply Capacity constantly promoted requirement to power semiconductor parallel connection distributed inductance with because current sharing caused by radiating condition is different becomes Poor problem.
Utility model content
For above-mentioned deficiency in the prior art, the utility model provides a kind of good heat dissipation effect, realizes more power lists The confluence of first copped wave rectification module and the plasma power supply IGBT copped wave rectification unit modular structure flowed.
To achieve the above object of the invention, the technology employed by the present utility model is
A kind of plasma power supply IGBT copped wave rectification unit modular structure is provided comprising two IGBT modules, two IGBT module is electrically connected with stack bus bar, and stack bus bar is electrically connected with current Hall sensor and two direct current film support filters Wave capacitor;Two IGBT modules, two direct current film support filter capacitors, current Hall sensor and stack bus bar are installed in On radiator, radiator passes through special-shaped air duct and connect with blower, and blower and radiator are respectively mounted on the rack.
Further, two IGBT modules being installed on a heat sink close to blower side side by side, two direct current film branch Air outlet on a heat sink is mounted side by side in support filter capacitor, and stack bus bar is mounted on two IGBT modules and two direct current films It supports between filter capacitor.
Further, there are two thermally sensitive temperature sensors, two thermally sensitive temperature sensors to distinguish position for installation above radiator In the left and right sides of air outlet on two IGBT module radiators.
Further, stack bus bar includes copped wave output copper bus-bar, cathode copper bus-bar and the positive copper bus-bar being sequentially overlapped, Insulating film layer is provided between copped wave output copper bus-bar, cathode copper bus-bar and positive copper bus-bar;Copped wave exports copper bus-bar, cathode Wiring nut mounting hole is provided on copper bus-bar and positive copper bus-bar.
Further, insulating film layer is also equipped with below the top of copped wave output copper bus-bar and positive copper bus-bar.
Further, insulating film layer is hot-setting adhesive material.
The utility model has the following beneficial effects: this programme passes through two IGBT modules and two direct current film support filtered electricals Appearance is electrically connected with stack bus bar, and two IGBT modules is made to form parallel connection, guarantees the equal properties of flow of DC side commutation circuit, and is guaranteed The equal properties of flow of copped wave outlet side.Cold air is pumped into radiator by blower, and by special-shaped air duct pressurization, takes away two pieces of IGBT The heat of module, and the direct current support capacitor of radiator air outlet can be cooled down;It avoids because IGBT module temperature is excessively high The failure of IGBT module damage.
Thermally sensitive temperature sensor is used to detect the temperature of the radiator of installation IGBT module, and the temperature signal that will test is anti- It feeds and carries out real time temperature acquisition, the temperature of master controller real-time monitoring radiator in the master controller of plasma power supply;Lamination It is superimposed between the output copper bus-bar of busbar, cathode copper bus-bar and positive copper bus-bar by insulating film, it can will insulation by hot-working Film fusing, making the stack bus bar fusion of superposition is firm entirety, mutually insulated between each busbar, and insulation pressure resistance is greater than AC3500V.Via hole is not present between all copper bus-bars, is not required to belling, copper post rivet or weld, and use holohedral symmetry mode, from And do not need to open crimp again in change of product, processing cost is low, and the manufacturing cycle is very short, adapts to current flexibility and wants Ask higher single-piece or sizing batch production.
Detailed description of the invention
Fig. 1 is the structure chart of plasma power supply IGBT copped wave rectification unit modular structure.
Fig. 2 is the disassembly diagram of stack bus bar.
Fig. 3 is the equivalent circuit diagram of plasma power supply IGBT chopping depressuring module.
Wherein, 1, rack, 2, radiator, 3, direct current film support filter capacitor, 4, current Hall sensor, 5, temperature-sensitive temperature Spend sensor, 6, blower, 7, IGBT module, 8, stack bus bar, 9, copped wave output copper bus-bar, 10, cathode copper bus-bar, 11, anode Copper bus-bar, 12, insulating film layer.
Specific embodiment
Specific embodiment of the present utility model is described below, in order to facilitate understanding by those skilled in the art The utility model, it should be apparent that the utility model is not limited to the range of specific embodiment, to the common skill of the art For art personnel, if various change the attached claims limit and determine the utility model spirit and scope in, These variations are it will be apparent that all utilize the innovation and creation of the utility model design in the column of protection.
As shown in Figure 1, plasma power supply with IGBT copped wave rectification unit modular structure include two IGBT modules 7, two IGBT module 7 is electrically connected with stack bus bar 8, and stack bus bar 8 is electrically connected with current Hall sensor 4 and two direct current film branch Support filter capacitor 3;Two IGBT modules, 7, two direct current film support filter capacitors 3, current Hall sensor 4 and stack bus bar 8 are installed on radiator 2, and radiator 2 passes through special-shaped air duct and connect with blower 6, and blower 6 and radiator 2 are installed in rack On 1.
This programme is electrically connected by two IGBT modules 7 and two direct current film support filter capacitors 3 with stack bus bar 8, So that two IGBT modules 7 is formed parallel connection, guarantee the equal properties of flow of DC side commutation circuit, and guarantees the Jun Liute of copped wave outlet side Property.IGBT module 7 uses 300R 17KE3 type IGBT power device, and current Hall sensor 4 is sensed using the current Hall of 100A Device 4, direct current film support filter capacitor 3 use 470uF900VDC type direct current film support filter capacitor 3, and radiator 2 uses XHX1002 type radiator 2, blower 6 use KAKU-1725HA type blower 6.
As shown in figure 3, equivalent circuit diagram of the plasma power supply with IGBT chopping depressuring module, wherein IGBT1 module and IGBT2 is respectively two IGBT modules 7 in parallel, and L1-L6 is stray inductance, and L1 is that half bridge arm upper tube K1 of IGBT1 module is arrived Direct current inputs the equivalent inductance of side of the positive electrode (+30) confluence position, and L4 is that diode D1 anode is defeated to direct current in IGBT1 module Enter the equivalent inductance of negative side (- 31) confluence position;L2 and L3 is the corresponding equivalent inductance of half bridge arm of IGBT2 module, In, L2 is the equivalent inductance of IGBT2 module K2, and L3 is the equivalent inductance of D2 in IGBT2 module;L5 is the half-bridge of IGBT1 module Arm to copped wave outlet side (+202) confluence position equivalent inductance, L6 be IGBT2 module half bridge arm to copped wave outlet side (+ 202) equivalent inductance of confluence position.
According to the equal properties of flow of two IGBT modules 7 in parallel, in the direct-flow input end of IGBT module 7, due to IGBT mould Block 7 is worked in a manner of HF switch, and the stray inductance of direct-flow input end plays absolute impedance distributional effects, guarantees stray electrical Sense L1 is equal with the inductance value of L4 with L2, L3, that is, can guarantee the equal properties of flow of DC side commutation circuit.
Two IGBT modules 7 being mounted on radiator 2 close to 6 side of blower side by side, two direct current film supports filtering Being mounted at the air outlet of radiator 2 side by side of capacitor 3, stack bus bar 8 is mounted on two IGBT modules 7 and two direct currents are thin Film supports between filter capacitor 3.
Cold air is pumped into radiator 2 by blower 6, and by special-shaped air duct pressurization, takes away the heat of two pieces of IGBT modules 7 Amount, and the direct current support capacitor of 2 air outlet of radiator can be cooled down;Avoid because 7 temperature of IGBT module it is excessively high caused by Failure.
There are two thermally sensitive temperature sensors 5, two thermally sensitive temperature sensors 5 to be located at two for installation above radiator 2 IGBT module 7 is close to the left and right sides of 2 air outlet of radiator.Thermally sensitive temperature sensor 5 is used to detect the temperature of radiator 2, and The temperature signal that will test, which is fed back to, carries out real time temperature acquisition, master controller real-time monitoring in the master controller of plasma power supply The temperature of radiator;Thermally sensitive temperature sensor 5 uses TELESKY type thermally sensitive temperature sensor, and temperature-measuring range is Celsius in 10-100 Degree.
As shown in Fig. 2, stack bus bar 8 includes copped wave output copper bus-bar 9, cathode copper bus-bar 10 and the positive copper being sequentially overlapped Busbar 11 is provided with insulating film layer 12, copped wave between copped wave output copper bus-bar 9, cathode copper bus-bar 10 and positive copper bus-bar 11 Terminals are provided on output copper bus-bar 9, cathode copper bus-bar 10 and positive copper bus-bar 11;The top of copped wave output copper bus-bar 9 It is also equipped with insulating film layer 12 with the lower section of positive copper bus-bar 11, insulating film layer 12 is hot-setting adhesive material.
It, can by insulating film superposition between the output copper bus-bar of stack bus bar 8, cathode copper bus-bar 10 and positive copper bus-bar 11 Insulating film is melted by hot-working, making the fusion of stack bus bar 8 of superposition is firm entirety, between each busbar mutually absolutely Edge, insulation pressure resistance are greater than AC3500V;Via hole is not present between all copper bus-bars, is not required to belling, copper post rivet or weld, and adopt With holohedral symmetry mode, to not need to open crimp again in change of product, processing cost is low, and the manufacturing cycle is very It is short, adapt to the higher single-piece of current flexibility requirements or sizing batch production.

Claims (6)

1. a kind of plasma power supply IGBT copped wave rectification unit modular structure, which is characterized in that including two IGBT modules (7), two IGBT modules (7) are electrically connected with stack bus bar (8), and the stack bus bar (8) is electrically connected with current Hall Sensor (4) and two direct current film support filter capacitors (3);Two IGBT modules (7), two direct current film support filters Wave capacitor (3), current Hall sensor (4) and stack bus bar (8) are installed on radiator (2), and the radiator (2) passes through Special-shaped air duct is connect with blower (6), and the blower (6) and radiator (2) are installed on rack (1).
2. plasma power supply according to claim 1 IGBT copped wave rectification unit modular structure, which is characterized in that two The IGBT module (7) being mounted on radiator (2) close to blower (6) side side by side, two direct current film supports filters Wave capacitor (3) is mounted side by side on the air outlet on radiator (2), the stack bus bar (8) be mounted on two IGBT modules (7) and Between two direct current film support filter capacitors (3).
3. plasma power supply according to claim 1 IGBT copped wave rectification unit modular structure, which is characterized in that described There are two thermally sensitive temperature sensor (5), two thermally sensitive temperature sensors (5) to be located at two for installation above radiator (2) A IGBT module (7) is close to the left and right sides of radiator (2) air outlet.
4. plasma power supply according to claim 1 IGBT copped wave rectification unit modular structure, which is characterized in that described Stack bus bar (8) includes copped wave output copper bus-bar (9) being sequentially overlapped, cathode copper bus-bar (10) and positive copper bus-bar (11), institute It states and is provided with insulating film layer (12) between copped wave output copper bus-bar (9), cathode copper bus-bar (10) and positive copper bus-bar (11);Institute It states and is provided with wiring nut mounting hole on copped wave output copper bus-bar (9), cathode copper bus-bar (10) and positive copper bus-bar (11).
5. plasma power supply according to claim 4 IGBT copped wave rectification unit modular structure, which is characterized in that described Insulating film layer (12) are also equipped with below the top of copped wave output copper bus-bar (9) and positive copper bus-bar (11).
6. plasma power supply according to claim 4 or 5 IGBT copped wave rectification unit modular structure, which is characterized in that The insulating film layer (12) is hot-setting adhesive material.
CN201920808843.2U 2019-05-30 2019-05-30 A kind of plasma power supply IGBT copped wave rectification unit modular structure Active CN209731098U (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114094842A (en) * 2020-08-03 2022-02-25 中车株洲电力机车研究所有限公司 Converter module
CN114189128A (en) * 2020-08-25 2022-03-15 中车株洲电力机车研究所有限公司 Resistance-inductance consistency direct current loop, current transformer and rail transit vehicle

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
CN114094842A (en) * 2020-08-03 2022-02-25 中车株洲电力机车研究所有限公司 Converter module
CN114094842B (en) * 2020-08-03 2024-03-01 中车株洲电力机车研究所有限公司 Converter module
CN114189128A (en) * 2020-08-25 2022-03-15 中车株洲电力机车研究所有限公司 Resistance-inductance consistency direct current loop, current transformer and rail transit vehicle
CN114189128B (en) * 2020-08-25 2024-03-01 中车株洲电力机车研究所有限公司 Resistance-sense consistency direct current loop, converter and rail transit vehicle

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