CN209728158U - A kind of phased array integrated optics chip and optical phased array emitter - Google Patents
A kind of phased array integrated optics chip and optical phased array emitter Download PDFInfo
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- CN209728158U CN209728158U CN201822275947.XU CN201822275947U CN209728158U CN 209728158 U CN209728158 U CN 209728158U CN 201822275947 U CN201822275947 U CN 201822275947U CN 209728158 U CN209728158 U CN 209728158U
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Abstract
A kind of phased array integrated optics chip provided by the utility model includes sequentially connected wave multiplexer, 1xN beam splitter, phased waveguide array and output area；The wave multiplexer has input terminal corresponding with chip of laser outgoing beam, and output end is connect with the 1xN beam splitter；The 1xN beam splitter for that light will be divided into multichannel and export to the phased waveguide array all the way.By accessing the outgoing beam, multiple light sources output power can be synthesized, under the premise of not increasing heat dissipation difficulty, make emitter that there is high-output power.The utility model provides a kind of optical phased array emitter simultaneously, including the phased array integrated optics chip and is integrated in the chip of laser of the phased array integrated optics chip.Phased function is integrated in the scheme of same module or chip, structure is more compact.
Description
Technical field
The utility model relates to optical phased array technical fields, and in particular to a kind of phased array integrated optics chip and optics
Phased array emitter.
Background technique
Optical phased array technology, which refers to, to be made to generate specific phase difference between Waveguide array by modulation system, realizes beam angle
The rotation of degree, compared with machinery rotation and MEMS light beam sweeping scheme, optical phased array radar is free of rotating element, has scanning
The advantages that speed is fast, and scanning range is big, and integrated level is high, high reliablity, at low cost.Realize optical phased array waveguide phase-modulation
Principle includes the electrooptic effect of the materials such as liquid crystal, PLZT ceramics, lithium niobate, the thermo-optic effect of silicon substrate integrated optics chip
Or plasma dispersion effect etc..Wherein, silicon substrate integrated optics chip is compatible with semiconductor CMOS process, it can be achieved that light source detects
Device on piece is integrated, compact-sized, at low cost.Therefore, the phased-array laser radar based on silicon substrate integrated optics chip has very big
Market prospects.
Detection range is one of key technical index of laser radar, when being propagated in space due to optical signal intensity with
Distance increases and decays in inverse square formula, when detection range increases, it is meant that laser radar receiving end signal and ambient noise
Ratio decreases.A kind of scheme for improving signal-to-noise ratio is to improve signal transmission power, it means that the raising of light source power, with
And chip waveguide is able to bear high power without occurring damaging or nonlinear effect.
In the prior art, it is mentioned using the optical phased array scan module technical solution fixed with optical fiber laser pigtail coupling
High optical power has notable difference with phased array chip size, using laser conduct outside piece since laser is large volume outside piece
Light source introduces the miniaturization that optical phased array is unfavorable for laser radar system by optical fiber again.
Utility model content
Therefore, in order to overcome in the prior art to improve optical power using laser outside piece, system is caused to be not easy small-sized
The problem of change, so that providing one kind is being integrated in same chip, multiple laser emittings for multiple chip of laser and phased array
Multi-wavelength beam by multiplex device realize power combing, for phased array provide high power input optical phased array transmitting fill
It sets.
The design scheme of the utility model is as follows:
A kind of phased array integrated optics chip, including sequentially connected wave multiplexer, 1xN beam splitter, phased waveguide array and
Output area；The wave multiplexer has input terminal corresponding with chip of laser outgoing beam, and output end and the 1xN beam splitter connect
It connects；The 1xN beam splitter for that light will be divided into multichannel and export to the phased waveguide array all the way.
Preferably, the central wavelength and bandwidth with the chip of laser phase of the wave multiplexer and the 1xN beam splitter
Match.
Preferably, the wave multiplexer structure includes but is not limited to: array waveguide grating, directional coupler, mach zhender
Interferometer and micro-loop filter.
Preferably, the phased array integrated optics chip is using silicon as substrate, any layer of material in waveguide core layer and covering
Including but not limited to: silica, doping silicon dioxide, silicon, silicon nitride, silicon oxynitride and silicon carbide.
Preferably, the sandwich layer quantity and covering quantity of the phased array integrated optics chip waveguiding structure are no less than three layers.
A kind of optical phased array emitter, including the phased array integrated optics chip and it is integrated in the phased array
The chip of laser of integrated optics chip.
Preferably, the chip of laser and the phased array integrated optics chip are respectively positioned on temperature controller, the temperature
Degree controller is used to monitor and reduce the temperature of the optical phased array emitter.
Preferably, the temperature controller includes thermoelectric cooling semiconductor.
Preferably, the chip of laser is fixed on heat sink, and the phased array integrated optics chip direct-coupling,
Or, being coupled by lenticule with the phased array integrated optics chip.
Preferably, the chip of laser is fixed with the phased array integrated optics chip by flip chip bonding, or bonding is solid
It is fixed, or, chip of laser preparation is on the material being bonded with the phased array integrated optics chip.
Preferably, the sandwich layer only supports single polarization mode, or supports two polarization state modes, and two polarization morphotypes
Effective refractive index absolute difference between formula is not less than 5e-4。
Preferably, the section of the sandwich layer is the rectangle that ridge or length-width ratio are more than or equal to 2.
Preferably, the polarization extinction ratio absolute value of the chip of laser is not less than 10dB.
Technical solutions of the utility model have the advantages that
1, a kind of phased array integrated optics chip provided by the utility model, including sequentially connected wave multiplexer, 1xN beam splitting
Device, phased waveguide array and output area；The wave multiplexer has input terminal corresponding with chip of laser outgoing beam, output end
It is connect with the 1xN beam splitter；The 1xN beam splitter for that light will be divided into multichannel and export to the phased waveguide battle array all the way
Column.By accessing the outgoing beam, multiple light sources output power can be synthesized, under the premise of not increasing heat dissipation difficulty, make to send out
Injection device has high-output power.
2, a kind of optical phased array emitter provided by the utility model, including the phased array integrated optics chip with
And it is integrated in the chip of laser of the phased array integrated optics chip.Phased function is integrated in the side of same module or chip
Case, structure are more compact.In the prior art, the technical side that optical phased array scan module and optical fiber laser pigtail coupling are fixed
Case is unfavorable for the miniaturization of laser radar system.And laser light source and phased function are integrated in the side of same module or chip
Case, structure is more compact, and since silicon is indirect bandgap material, luminous efficiency is low, is not easy to realize luminescent device.At present
Chip of laser mostly uses III-V material to prepare, and encapsulates fixation by mode on and off the chip with silicon base chip.Single mode at present
The output power and wavelength stability of semiconductor laser chip are mainly limited by heat dissipation.The utility model provides a kind of light
Phased array emitter is learned, multiple chip of laser and phased array are integrated in same chip, more waves of multiple laser emittings
Long light beam realizes power combing by multiplex device, provides high power input for phased array, emitter is made to have high output work
Rate, while single chip cooling requirements are lower, module compact overall structure.
3, a kind of optical phased array emitter provided by the utility model, the chip of laser and the phased array collection
It is respectively positioned on temperature controller at optical chip, the temperature controller is for monitoring and reducing the optical phased array emitter
Temperature, to solve the heat dissipation problem of multiple chip of laser.
4, a kind of optical phased array emitter provided by the utility model, the sandwich layer only support single polarization mode,
Or support two polarization state modes, and the effective refractive index absolute difference between two polarization state modes is not less than 5e-4.The core
The section of layer is the rectangle that ridge or length-width ratio are more than or equal to 2.The polarization extinction ratio absolute value of the chip of laser is not less than
10dB.To ensure that light source output polarised light, and the polarization-maintaining always during waveguide transmission.
Detailed description of the invention
It, below will be right in order to illustrate more clearly of specific embodiment of the present invention or technical solution in the prior art
Specific embodiment or attached drawing needed to be used in the description of the prior art are briefly described, it should be apparent that, it is described below
In attached drawing be that some embodiments of the utility model are not paying creativeness for those of ordinary skill in the art
Under the premise of labour, it is also possible to obtain other drawings based on these drawings.
Fig. 1 is the optical phased array emitter structure schematic top plan view of the utility model；
Fig. 2 is the optical phased array emitter structural upright schematic diagram of the utility model；
Fig. 3 is array waveguide grating (AWG) wave multiplexer structural schematic diagram of the utility model；
Fig. 4 is directional coupler (DC) wave multiplexer structural schematic diagram of the utility model；
Fig. 5 is Mach-Zehnder interferometers (MZI) wave multiplexer structural schematic diagram of the utility model；
Fig. 6 is the micro-loop filter wave multiplexer structural schematic diagram of the utility model.
Description of symbols:
1- wave multiplexer；2-1xN beam splitter；The phased waveguide array of 3-；The output area 4-；5- chip of laser；The control of 6- temperature
Device.
Specific embodiment
The technical solution of the utility model is clearly and completely described below in conjunction with attached drawing, it is clear that described
Embodiment is the utility model a part of the embodiment, instead of all the embodiments.Based on the embodiments of the present invention, originally
Field those of ordinary skill every other embodiment obtained without making creative work belongs to practical
Novel protected range.
It is in the description of the present invention, it should be noted that term " center ", "upper", "lower", "left", "right", " perpendicular
Directly ", the orientation or positional relationship of the instructions such as "horizontal", "inner", "outside" is to be based on the orientation or positional relationship shown in the drawings, and is only
For ease of description the utility model and simplify description, rather than the device or element of indication or suggestion meaning must have it is specific
Orientation, be constructed and operated in a specific orientation, therefore should not be understood as limiting the present invention.In addition, term " the
One ", " second ", " third " are used for descriptive purposes only and cannot be understood as indicating or suggesting relative importance.
In the description of the present invention, it should be noted that unless otherwise clearly defined and limited, term " is pacified
Dress ", " connected ", " connection " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or integrally
Connection；It can be mechanical connection, be also possible to be electrically connected；Can be directly connected, can also indirectly connected through an intermediary,
It can be the connection inside two elements.For the ordinary skill in the art, above-mentioned art can be understood with concrete condition
The concrete meaning of language in the present invention.
In addition, as long as technical characteristic involved in the utility model different embodiments disclosed below is each other
Not constituting conflict can be combined with each other.
A kind of phased array integrated optics chip provided by the utility model, including sequentially connected wave multiplexer 1,1xN beam splitting
Device 2, phased waveguide array 3 and output area 4；The wave multiplexer 1 has input terminal corresponding with 5 outgoing beam of chip of laser,
Output end is connect with the 1xN beam splitter 2；The 1xN beam splitter 2 is combined into all the way for multichannel light beam and exports to the phase
Control waveguide array 3.The central wavelength and bandwidth of the wave multiplexer 1 and the 1xN beam splitter 2 and 5 phase of chip of laser
Match.As shown in figures 3 to 6,1 structure of wave multiplexer includes but is not limited to: array waveguide grating, directional coupler, Mach was once
Dare interferometer and micro-loop filter.The phased array integrated optics chip is any in waveguide core layer and covering using silicon as substrate
Layer of material includes but is not limited to: silica, doping silicon dioxide, silicon, silicon nitride, silicon oxynitride and silicon carbide.The phase
The sandwich layer quantity and covering quantity for controlling battle array integrated optics chip waveguiding structure are no less than three layers.
A kind of optical phased array emitter that the utility model provides simultaneously, as depicted in figs. 1 and 2, including the phase
Control battle array integrated optics chip and the chip of laser 5 for being integrated in the phased array integrated optics chip.The chip of laser 5
It is respectively positioned on temperature controller 6 with the phased array integrated optics chip, the temperature controller 6 is described for monitoring and reducing
The temperature of optical phased array emitter.The temperature controller 6 includes thermoelectric cooling semiconductor.The chip of laser 5 is solid
On heat sink, and the phased array integrated optics chip direct-coupling, or, passing through lenticule and the phased array integrated optics
Chip coupling.The chip of laser 5 is fixed with the phased array integrated optics chip by flip chip bonding, or bonding is fixed, or,
The preparation of chip of laser 5 is on the material being bonded with the phased array integrated optics chip.
Emitter includes: the laser array with heat sink base, silicon substrate integrated optics chip, temperature control in the present embodiment
Device 6 processed, phase-control circuit and temperature-control circuit are constituted.It wherein, include the 4x1 based on MZI on silicon substrate integrated optics chip
Wave multiplexer 1 cascades the 1x8 splitter constituted, the phased waveguide array 3 with modulator electrode by 3 grades of 1x2 MMI, and closes beam
Output area 4.Silicon substrate integrated optics chip waveguide core layer material is silicon, and clad material is silica.The laser of 4 different wave lengths
Device chip 5 is fixed with substrate, is assembled into COS laser array；Silicon-based optical chip, 1 input terminal of wave multiplexer prepare step and gold
Belong to layer, chip is fixed on temperature controller 6；Laser array is coupled with wave multiplexer 1, Laser Output Beam and wave multiplexer 1
Input terminal alignment, laser output wavelength are located within the scope of the transmitted spectrum of 1 respective channel of wave multiplexer.
The sandwich layer only supports single polarization mode, or supports two polarization state modes, and between two polarization state modes
Effective refractive index absolute difference is not less than 5e-4.The section of the sandwich layer is the rectangle that ridge or length-width ratio are more than or equal to 2.Institute
The polarization extinction ratio absolute value of chip of laser 5 is stated not less than 10dB.Common silicon substrate integrated optics chip is with silicon, doping dioxy
The materials such as SiClx, silicon nitride, silicon oxynitride are waveguide core layer, and since process conditions limit, waveguide sections are usually in thickness direction
Rectangle or ridge structure less than normal, there are higher structural birefringences；And due to the coefficient of thermal expansion differences of sandwich layer and clad material
It is different, it is uneven often to there is spatial distribution after the completion of chip preparation, and anisotropic internal stress, leads to stress birfringence,
Two above factor leads to chip waveguide, and there are birefringent.The initial difference of Waveguide array equally exists birefringent, i.e., two just
Hand over the initially difference of polarization mode inconsistent.When chip input light exists simultaneously two polarization states, then ideal can not be obtained
Initial difference, lead to secondary lobe and lower output beam quality.Therefore, by light source polarization extinction ratio and waveguide mode
Birefringent restriction may be implemented to guarantee it for high-power polarization light on the basis of output high-power light beam.
Obviously, the above embodiments are merely examples for clarifying the description, and does not limit the embodiments.It is right
For those of ordinary skill in the art, can also make on the basis of the above description it is other it is various forms of variation or
It changes.There is no necessity and possibility to exhaust all the enbodiments.And it is extended from this it is obvious variation or
It changes among the protection scope created still in the utility model.
Claims (13)
1. a kind of phased array integrated optics chip, it is characterised in that: including sequentially connected wave multiplexer (1), 1xN beam splitter (2),
Phased waveguide array (3) and output area (4)；The wave multiplexer (1) has input corresponding with chip of laser (5) outgoing beam
End, output end are connect with the 1xN beam splitter (2)；The 1xN beam splitter (2) is combined into all the way for multichannel light beam and exports extremely
The phased waveguide array (3)；The phased array integrated optics chip includes substrate, sandwich layer and covering.
2. phased array integrated optics chip according to claim 1, it is characterised in that: the wave multiplexer (1) and the 1xN
The central wavelength and bandwidth of beam splitter (2) match with the chip of laser (5).
3. phased array integrated optics chip according to claim 1, it is characterised in that: wave multiplexer (1) structure includes
But it is not limited to: array waveguide grating, directional coupler, Mach-Zehnder interferometers and micro-loop filter.
4. phased array integrated optics chip according to claim 1, it is characterised in that: the material of the substrate is silicon, institute
Stating any layer of material in sandwich layer and the covering includes but is not limited to: silica, doping silicon dioxide, silicon, silicon nitride, nitrogen
Silica and silicon carbide.
5. phased array integrated optics chip according to claim 1, it is characterised in that: the phased array integrated optics chip
The sandwich layer quantity and the covering quantity of waveguiding structure are no less than three layers.
6. a kind of optical phased array emitter, which is characterized in that including phased array collection of any of claims 1-5
At optical chip and it is integrated in the chip of laser (5) of the phased array integrated optics chip.
7. optical phased array emitter according to claim 6, which is characterized in that the chip of laser (5) with
The phased array integrated optics chip is respectively positioned on temperature controller (6), and the temperature controller (6) is described for monitoring and reducing
The temperature of optical phased array emitter.
8. optical phased array emitter according to claim 7, which is characterized in that temperature controller (6) packet
Include thermoelectric cooling semiconductor.
9. optical phased array emitter according to claim 6, which is characterized in that the chip of laser (5) is solid
On heat sink, and the phased array integrated optics chip direct-coupling, or, passing through lenticule and the phased array integrated optics
Chip coupling.
10. optical phased array emitter according to claim 6, which is characterized in that the chip of laser (5) with
The phased array integrated optics chip is fixed by flip chip bonding, or bonding fix, or, the chip of laser (5) preparation with
On the material of the phased array integrated optics chip bonding.
11. optical phased array emitter according to claim 6, it is characterised in that: the sandwich layer is only supported single inclined
Vibration mode, or support two polarization state modes, and the effective refractive index absolute difference between two polarization state modes is not less than 5e-4。
12. optical phased array emitter according to claim 6, it is characterised in that: the section of the sandwich layer is ridge
Or length-width ratio is more than or equal to 2 rectangle.
13. optical phased array emitter according to claim 6, which is characterized in that the chip of laser (5)
Polarization extinction ratio absolute value is not less than 10dB.
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| CN201822275947.XU CN209728158U (en) | 2018-12-29 | 2018-12-29 | A kind of phased array integrated optics chip and optical phased array emitter |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109581329A (en) * | 2018-12-29 | 2019-04-05 | 中科天芯科技（北京）有限公司 | A kind of phased array integrated optics chip and optical phased array emitter |
| US11598917B2 (en) | 2020-08-26 | 2023-03-07 | Chongqing Institute Of East China Normal University | Silicon nitride phased array chip based on a suspended waveguide structure |
-
2018
- 2018-12-29 CN CN201822275947.XU patent/CN209728158U/en active Active
Cited By (3)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109581329A (en) * | 2018-12-29 | 2019-04-05 | 中科天芯科技（北京）有限公司 | A kind of phased array integrated optics chip and optical phased array emitter |
| CN109581329B (en) * | 2018-12-29 | 2024-01-23 | 国科光芯(海宁)科技股份有限公司 | Phased array integrated optical chip and optical phased array transmitting device |
| US11598917B2 (en) | 2020-08-26 | 2023-03-07 | Chongqing Institute Of East China Normal University | Silicon nitride phased array chip based on a suspended waveguide structure |
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