CN109581329A - A kind of phased array integrated optics chip and optical phased array emitter - Google Patents
A kind of phased array integrated optics chip and optical phased array emitter Download PDFInfo
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- CN109581329A CN109581329A CN201811643766.6A CN201811643766A CN109581329A CN 109581329 A CN109581329 A CN 109581329A CN 201811643766 A CN201811643766 A CN 201811643766A CN 109581329 A CN109581329 A CN 109581329A
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- phased array
- chip
- integrated optics
- laser
- optics chip
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- 230000003287 optical effect Effects 0.000 title claims abstract description 33
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 claims description 23
- 229910052710 silicon Inorganic materials 0.000 claims description 23
- 239000010703 silicon Substances 0.000 claims description 23
- 239000010410 layer Substances 0.000 claims description 19
- 230000010287 polarization Effects 0.000 claims description 18
- VYPSYNLAJGMNEJ-UHFFFAOYSA-N Silicium dioxide Chemical compound O=[Si]=O VYPSYNLAJGMNEJ-UHFFFAOYSA-N 0.000 claims description 14
- 239000000463 material Substances 0.000 claims description 13
- 239000000758 substrate Substances 0.000 claims description 11
- 238000010168 coupling process Methods 0.000 claims description 7
- 238000005859 coupling reaction Methods 0.000 claims description 7
- 239000000377 silicon dioxide Substances 0.000 claims description 7
- 230000008033 biological extinction Effects 0.000 claims description 5
- 239000012792 core layer Substances 0.000 claims description 5
- 229910052581 Si3N4 Inorganic materials 0.000 claims description 4
- 230000008878 coupling Effects 0.000 claims description 4
- 239000004065 semiconductor Substances 0.000 claims description 4
- HQVNEWCFYHHQES-UHFFFAOYSA-N silicon nitride Chemical compound N12[Si]34N5[Si]62N3[Si]51N64 HQVNEWCFYHHQES-UHFFFAOYSA-N 0.000 claims description 4
- 238000002360 preparation method Methods 0.000 claims description 3
- HBMJWWWQQXIZIP-UHFFFAOYSA-N silicon carbide Chemical compound [Si+]#[C-] HBMJWWWQQXIZIP-UHFFFAOYSA-N 0.000 claims description 3
- 229910010271 silicon carbide Inorganic materials 0.000 claims description 3
- 235000012239 silicon dioxide Nutrition 0.000 claims description 3
- 238000012544 monitoring process Methods 0.000 claims description 2
- 239000007787 solid Substances 0.000 claims description 2
- 238000005057 refrigeration Methods 0.000 claims 1
- 230000005619 thermoelectricity Effects 0.000 claims 1
- 230000017525 heat dissipation Effects 0.000 abstract description 4
- 238000010586 diagram Methods 0.000 description 5
- 239000000243 solution Substances 0.000 description 5
- 238000001816 cooling Methods 0.000 description 3
- 230000000694 effects Effects 0.000 description 3
- 238000002347 injection Methods 0.000 description 3
- 239000007924 injection Substances 0.000 description 3
- 238000000034 method Methods 0.000 description 3
- 239000013307 optical fiber Substances 0.000 description 3
- GWEVSGVZZGPLCZ-UHFFFAOYSA-N Titan oxide Chemical compound O=[Ti]=O GWEVSGVZZGPLCZ-UHFFFAOYSA-N 0.000 description 2
- 238000001514 detection method Methods 0.000 description 2
- 230000005540 biological transmission Effects 0.000 description 1
- 239000000919 ceramic Substances 0.000 description 1
- 239000004020 conductor Substances 0.000 description 1
- 230000000254 damaging effect Effects 0.000 description 1
- 230000007423 decrease Effects 0.000 description 1
- 239000006185 dispersion Substances 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000009434 installation Methods 0.000 description 1
- 238000005305 interferometry Methods 0.000 description 1
- 239000004973 liquid crystal related substance Substances 0.000 description 1
- GQYHUHYESMUTHG-UHFFFAOYSA-N lithium niobate Chemical compound [Li+].[O-][Nb](=O)=O GQYHUHYESMUTHG-UHFFFAOYSA-N 0.000 description 1
- 229910052751 metal Inorganic materials 0.000 description 1
- 239000002184 metal Substances 0.000 description 1
- 230000009022 nonlinear effect Effects 0.000 description 1
- 230000000644 propagated effect Effects 0.000 description 1
- 230000008054 signal transmission Effects 0.000 description 1
- 238000001228 spectrum Methods 0.000 description 1
- 238000010408 sweeping Methods 0.000 description 1
- 239000004408 titanium dioxide Substances 0.000 description 1
Classifications
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/481—Constructional features, e.g. arrangements of optical elements
- G01S7/4814—Constructional features, e.g. arrangements of optical elements of transmitters alone
-
- G—PHYSICS
- G01—MEASURING; TESTING
- G01S—RADIO DIRECTION-FINDING; RADIO NAVIGATION; DETERMINING DISTANCE OR VELOCITY BY USE OF RADIO WAVES; LOCATING OR PRESENCE-DETECTING BY USE OF THE REFLECTION OR RERADIATION OF RADIO WAVES; ANALOGOUS ARRANGEMENTS USING OTHER WAVES
- G01S7/00—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00
- G01S7/48—Details of systems according to groups G01S13/00, G01S15/00, G01S17/00 of systems according to group G01S17/00
- G01S7/481—Constructional features, e.g. arrangements of optical elements
- G01S7/4817—Constructional features, e.g. arrangements of optical elements relating to scanning
Landscapes
- Engineering & Computer Science (AREA)
- Computer Networks & Wireless Communication (AREA)
- Physics & Mathematics (AREA)
- General Physics & Mathematics (AREA)
- Radar, Positioning & Navigation (AREA)
- Remote Sensing (AREA)
- Optical Integrated Circuits (AREA)
Abstract
A kind of phased array integrated optics chip provided by the invention includes sequentially connected wave multiplexer, 1xN beam splitter, phased waveguide array and output area；The wave multiplexer has input terminal corresponding with chip of laser outgoing beam, and output end is connect with the 1xN beam splitter；The 1xN beam splitter for that light will be divided into multichannel and export to the phased waveguide array all the way.By accessing the outgoing beam, multiple light sources output power can be synthesized, under the premise of not increasing heat dissipation difficulty, make emitter that there is high-output power.Present invention simultaneously provides a kind of optical phased array emitters, including the phased array integrated optics chip and are integrated in the chip of laser of the phased array integrated optics chip.Phased function is integrated in the scheme of same module or chip, structure is more compact.
Description
Technical field
The present invention relates to optical phased array technical fields, and in particular to a kind of phased array integrated optics chip and optics are phased
Paroxysm injection device.
Background technique
Optical phased array technology, which refers to, to be made to generate specific phase difference between Waveguide array by modulation system, realizes beam angle
The rotation of degree, compared with machinery rotation and MEMS light beam sweeping scheme, optical phased array radar is free of rotating element, has scanning
The advantages that speed is fast, and scanning range is big, and integrated level is high, high reliablity, at low cost.Realize optical phased array waveguide phase-modulation
Principle includes the electrooptic effect of the materials such as liquid crystal, PLZT ceramics, lithium niobate, the thermo-optic effect of silicon substrate integrated optics chip
Or plasma dispersion effect etc..Wherein, silicon substrate integrated optics chip is compatible with semiconductor CMOS process, it can be achieved that light source detects
Device on piece is integrated, compact-sized, at low cost.Therefore, the phased-array laser radar based on silicon substrate integrated optics chip has very big
Market prospects.
Detection range is one of key technical index of laser radar, when being propagated in space due to optical signal intensity with
Distance increases and decays in inverse square formula, when detection range increases, it is meant that laser radar receiving end signal and ambient noise
Ratio decreases.A kind of scheme for improving signal-to-noise ratio is to improve signal transmission power, it means that the raising of light source power, with
And chip waveguide is able to bear high power without occurring damaging or nonlinear effect.
In the prior art, it is mentioned using the optical phased array scan module technical solution fixed with optical fiber laser pigtail coupling
High optical power has notable difference with phased array chip size, using laser conduct outside piece since laser is large volume outside piece
Light source introduces the miniaturization that optical phased array is unfavorable for laser radar system by optical fiber again.
Summary of the invention
Therefore, in order to overcome in the prior art to improve optical power using laser outside piece, system is caused to be not easy small-sized
The problem of change, so that providing one kind is being integrated in same chip, multiple laser emittings for multiple chip of laser and phased array
Multi-wavelength beam by multiplex device realize power combing, for phased array provide high power input optical phased array transmitting fill
It sets.
Design scheme of the invention is as follows:
A kind of phased array integrated optics chip, including sequentially connected wave multiplexer, 1xN beam splitter, phased waveguide array and
Output area；The wave multiplexer has input terminal corresponding with chip of laser outgoing beam, and output end and the 1xN beam splitter connect
It connects；The 1xN beam splitter for that light will be divided into multichannel and export to the phased waveguide array all the way.
Preferably, the central wavelength and bandwidth with the chip of laser phase of the wave multiplexer and the 1xN beam splitter
Match.
Preferably, the wave multiplexer structure includes but is not limited to: array waveguide grating, directional coupler, mach zhender
Interferometer and micro-loop filter.
Preferably, the phased array integrated optics chip is using silicon as substrate, any layer of material in waveguide core layer and covering
Including but not limited to: silica, doping silicon dioxide, silicon, silicon nitride, silicon oxynitride and silicon carbide.
Preferably, the sandwich layer quantity and covering quantity of the phased array integrated optics chip waveguiding structure are no less than three layers.
A kind of optical phased array emitter, including the phased array integrated optics chip and it is integrated in the phased array
The chip of laser of integrated optics chip.
Preferably, the chip of laser and the phased array integrated optics chip are respectively positioned on temperature controller, the temperature
Degree controller is used to monitor and reduce the temperature of the optical phased array emitter.
Preferably, the temperature control device includes thermoelectric cooling semiconductor.
Preferably, the chip of laser is fixed on heat sink, and the phased array integrated optics chip direct-coupling,
Or, being coupled by lenticule with the phased array integrated optics chip.
Preferably, the chip of laser is fixed with the phased array integrated optics chip by flip chip bonding, or bonding is solid
It is fixed, or, chip of laser preparation is on the material being bonded with the phased array integrated optics chip.
Preferably, the sandwich layer only supports single polarization mode, or supports two polarization state modes, and two polarization morphotypes
Effective refractive index absolute difference between formula is not less than 5e-4。
Preferably, the section of the sandwich layer is the rectangle that ridge or length-width ratio are more than or equal to 2.
Preferably, the polarization extinction ratio absolute value of the chip of laser is not less than 10dB.
Technical solution of the present invention has the advantages that
1, a kind of phased array integrated optics chip provided by the invention, including sequentially connected wave multiplexer, 1xN beam splitter,
Phased waveguide array and output area；The wave multiplexer have input terminal corresponding with chip of laser outgoing beam, output end with
The 1xN beam splitter connection；The 1xN beam splitter for that light will be divided into multichannel and export to the phased waveguide array all the way.
By accessing the outgoing beam, multiple light sources output power can be synthesized, under the premise of not increasing heat dissipation difficulty, fill transmitting
It sets with high-output power.
2, a kind of optical phased array emitter provided by the invention, including the phased array integrated optics chip and collection
The chip of laser of phased array integrated optics chip described in Cheng Yu.Phased function is integrated in the scheme of same module or chip,
Structure is more compact.In the prior art, the technical solution that optical phased array scan module and optical fiber laser pigtail coupling are fixed
It is unfavorable for the miniaturization of laser radar system.And laser light source and phased function are integrated in the scheme of same module or chip,
Structure is more compact, and since silicon is indirect bandgap material, luminous efficiency is low, is not easy to realize luminescent device.Swash at present
Light device chip mostly uses III-V material to prepare, and encapsulates fixation by mode on and off the chip with silicon base chip.Single mode half at present
The output power and wavelength stability of conductor laser chip are mainly limited by heat dissipation.The present invention provides a kind of optics is phased
Multiple chip of laser and phased array are integrated in same chip, the multi-wavelength beam of multiple laser emittings by paroxysm injection device
Power combing is realized by multiplex device, is provided high power input for phased array, is made emitter that there is high-output power, simultaneously
Single chip cooling requirements are lower, module compact overall structure.
3, a kind of optical phased array emitter provided by the invention, the chip of laser and the phased array Integrated Light
It learns chip and is respectively positioned on temperature controller, the temperature controller is used to monitor and reduce the temperature of the optical phased array emitter
Degree, to solve the heat dissipation problem of multiple chip of laser.
4, a kind of optical phased array emitter provided by the invention, the sandwich layer only support single polarization mode, or branch
Two polarization state modes are held, and the effective refractive index absolute difference between two polarization state modes is not less than 5e-4.The sandwich layer
Section is the rectangle that ridge or length-width ratio are more than or equal to 2.The polarization extinction ratio absolute value of the chip of laser is not less than 10dB.
To ensure that light source output polarised light, and the polarization-maintaining always during waveguide transmission.
Detailed description of the invention
It, below will be to specific in order to illustrate more clearly of the specific embodiment of the invention or technical solution in the prior art
Embodiment or attached drawing needed to be used in the description of the prior art be briefly described, it should be apparent that, it is described below
Attached drawing is some embodiments of the present invention, for those of ordinary skill in the art, before not making the creative labor
It puts, is also possible to obtain other drawings based on these drawings.
Fig. 1 is optical phased array emitter structure schematic top plan view of the invention；
Fig. 2 is optical phased array emitter structural upright schematic diagram of the invention；
Fig. 3 is array waveguide grating (AWG) wave multiplexer structural schematic diagram of the invention；
Fig. 4 is directional coupler (DC) wave multiplexer structural schematic diagram of the invention；
Fig. 5 is Mach-Zehnder interferometers (MZI) wave multiplexer structural schematic diagram of the invention；
Fig. 6 is micro-loop filter wave multiplexer structural schematic diagram of the invention.
Description of symbols:
1- wave multiplexer；2-1xN beam splitter；The phased waveguide array of 3-；The output area 4-；5- chip of laser；The control of 6- temperature
Device.
Specific embodiment
Technical solution of the present invention is clearly and completely described below in conjunction with attached drawing, it is clear that described implementation
Example is a part of the embodiment of the present invention, instead of all the embodiments.Based on the embodiments of the present invention, ordinary skill
Personnel's every other embodiment obtained without making creative work, shall fall within the protection scope of the present invention.
In the description of the present invention, it should be noted that term " center ", "upper", "lower", "left", "right", "vertical",
The orientation or positional relationship of the instructions such as "horizontal", "inner", "outside" be based on the orientation or positional relationship shown in the drawings, merely to
Convenient for description the present invention and simplify description, rather than the device or element of indication or suggestion meaning must have a particular orientation,
It is constructed and operated in a specific orientation, therefore is not considered as limiting the invention.In addition, term " first ", " second ",
" third " is used for descriptive purposes only and cannot be understood as indicating or suggesting relative importance.
In the description of the present invention, it should be noted that unless otherwise clearly defined and limited, term " installation ", " phase
Even ", " connection " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or be integrally connected；It can
To be mechanical connection, it is also possible to be electrically connected；It can be directly connected, can also can be indirectly connected through an intermediary
Connection inside two elements.For the ordinary skill in the art, above-mentioned term can be understood at this with concrete condition
Concrete meaning in invention.
As long as in addition, the non-structure each other of technical characteristic involved in invention described below different embodiments
It can be combined with each other at conflict.
A kind of phased array integrated optics chip provided by the invention, including sequentially connected wave multiplexer 1,1xN beam splitter 2,
Phased waveguide array 3 and output area 4；The wave multiplexer 1 has input terminal corresponding with 5 outgoing beam of chip of laser, output
End is connect with the 1xN beam splitter 2；The 1xN beam splitter 2 is combined into all the way for multichannel light beam and exports to the phased waveguide
Array 3.The central wavelength and bandwidth of the wave multiplexer 1 and the 1xN beam splitter 2 match with the chip of laser 5.Such as figure
Shown in 3- Fig. 6,1 structure of wave multiplexer includes but is not limited to: array waveguide grating, directional coupler, Mach Zehnder interferometry
Instrument and micro-loop filter.The phased array integrated optics chip is using silicon as substrate, any layer of material in waveguide core layer and covering
Including but not limited to: silica, doping silicon dioxide, silicon, silicon nitride, silicon oxynitride and silicon carbide.The phased array is integrated
The sandwich layer quantity and covering quantity of optical chip waveguiding structure are no less than three layers.
Present invention simultaneously provides a kind of optical phased array emitter, as depicted in figs. 1 and 2, including the phased array
Integrated optics chip and the chip of laser 5 for being integrated in the phased array integrated optics chip.The chip of laser 5 and institute
It states phased array integrated optics chip and is respectively positioned on temperature controller 6, the temperature controller 6 is for monitoring and reducing the optics phase
Control the temperature of paroxysm injection device.The temperature control device includes thermoelectric cooling semiconductor.The chip of laser 5 is fixed on heat sink
On, and the phased array integrated optics chip direct-coupling, or, passing through lenticule and the phased array integrated optics chip coupling
It closes.The chip of laser 5 is fixed with the phased array integrated optics chip by flip chip bonding, or bonding is fixed, or, described swash
Light device chip 5 is prepared on the material being bonded with the phased array integrated optics chip.
Emitter includes: the laser array with heat sink base, silicon substrate integrated optics chip, temperature control in the present embodiment
Device 6 processed, phase-control circuit and temperature-control circuit are constituted.It wherein, include the 4x1 based on MZI on silicon substrate integrated optics chip
It is defeated to cascade the 1x8 splitter constituted, the phased waveguide array 3 with modulator electrode, and conjunction beam by 3 grades of 1x2MMI for wave multiplexer 1
Area 4 out.Silicon substrate integrated optics chip waveguide core layer material is silicon, and clad material is silica.The laser of 4 different wave lengths
Chip 5 is fixed with substrate, is assembled into COS laser array；Silicon-based optical chip, 1 input terminal of wave multiplexer prepare step and metal
Layer, chip are fixed on temperature controller 6；Laser array is coupled with wave multiplexer 1, and Laser Output Beam and wave multiplexer 1 are defeated
Enter end alignment, laser output wavelength is located within the scope of the transmitted spectrum of 1 respective channel of wave multiplexer.
The sandwich layer only supports single polarization mode, or supports two polarization state modes, and between two polarization state modes
Effective refractive index absolute difference is not less than 5e-4.The section of the sandwich layer is the rectangle that ridge or length-width ratio are more than or equal to 2.Institute
The polarization extinction ratio absolute value of chip of laser 5 is stated not less than 10dB.Common silicon substrate integrated optics chip is with silicon, doping titanium dioxide
The materials such as silicon, silicon nitride, silicon oxynitride are waveguide core layer, and since process conditions limit, waveguide sections are usually in that thickness direction is inclined
Small rectangle or ridge structure, there are higher structural birefringences；And due to the thermal expansion coefficient difference of sandwich layer and clad material,
It is uneven often to there is spatial distribution after the completion of chip preparation, and anisotropic internal stress, leads to stress birfringence, it is above
Two factors lead to chip waveguide, and there are birefringent.Waveguide array it is initial difference equally exist it is birefringent, i.e., two it is orthogonal partially
The initially difference of vibration mode is inconsistent.When chip input light exists simultaneously two polarization states, then can not obtain ideal first
Begin difference, leads to secondary lobe and lower output beam quality.Therefore, by two-fold to light source polarization extinction ratio and waveguide mode
Restriction is penetrated, may be implemented to guarantee it for high-power polarization light on the basis of output high-power light beam.
Obviously, the above embodiments are merely examples for clarifying the description, and does not limit the embodiments.It is right
For those of ordinary skill in the art, can also make on the basis of the above description it is other it is various forms of variation or
It changes.There is no necessity and possibility to exhaust all the enbodiments.And it is extended from this it is obvious variation or
It changes still within the protection scope of the invention.
Claims (13)
1. a kind of phased array integrated optics chip, it is characterised in that: including sequentially connected wave multiplexer (1), 1xN beam splitter (2),
Phased waveguide array (3) and output area (4)；The wave multiplexer (1) has input corresponding with chip of laser (5) outgoing beam
End, output end are connect with the 1xN beam splitter (2)；The 1xN beam splitter (2) is combined into all the way for multichannel light beam and exports extremely
The phased waveguide array (3).
2. phased array integrated optics chip according to claim 1, it is characterised in that: the wave multiplexer (1) and the 1xN
The central wavelength and bandwidth of beam splitter (2) match with the chip of laser (5).
3. phased array integrated optics chip according to claim 1, it is characterised in that: wave multiplexer (1) structure includes
But it is not limited to: array waveguide grating, directional coupler, Mach-Zehnder interferometers and micro-loop filter.
4. phased array integrated optics chip according to claim 1, it is characterised in that: the phased array integrated optics chip
Using silicon as substrate, any layer of material includes but is not limited in waveguide core layer and covering: silica, doping silicon dioxide, silicon,
Silicon nitride, silicon oxynitride and silicon carbide.
5. phased array integrated optics chip according to claim 1, it is characterised in that: the phased array integrated optics chip
The sandwich layer quantity and covering quantity of waveguiding structure are no less than three layers.
6. a kind of optical phased array emitter, which is characterized in that including phased array collection of any of claims 1-5
At optical chip and it is integrated in the chip of laser (5) of the phased array integrated optics chip.
7. optical phased array emitter according to claim 6, which is characterized in that the chip of laser (5) with
The phased array integrated optics chip is respectively positioned on temperature controller (6), and the temperature controller (6) is described for monitoring and reducing
The temperature of optical phased array emitter.
8. optical phased array emitter according to claim 6, which is characterized in that the temperature control device includes thermoelectricity
Refrigeration semiconductor.
9. optical phased array emitter according to claim 6, which is characterized in that the chip of laser (5) is solid
On heat sink, and the phased array integrated optics chip direct-coupling, or, passing through lenticule and the phased array integrated optics
Chip coupling.
10. optical phased array emitter according to claim 6, which is characterized in that the chip of laser (5) with
The phased array integrated optics chip is fixed by flip chip bonding, or bonding fix, or, the chip of laser (5) preparation with
On the material of the phased array integrated optics chip bonding.
11. phased array integrated optics chip according to claim 6, it is characterised in that: the sandwich layer is only supported single inclined
Vibration mode, or support two polarization state modes, and the effective refractive index absolute difference between two polarization state modes is not less than 5e-4。
12. phased array integrated optics chip according to claim 6, it is characterised in that: the section of the sandwich layer is ridge
Or length-width ratio is more than or equal to 2 rectangle.
13. optical phased array emitter according to claim 6, which is characterized in that the chip of laser (5)
Polarization extinction ratio absolute value is not less than 10dB.
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|---|---|---|---|
| CN201811643766.6A CN109581329B (en) | 2018-12-29 | 2018-12-29 | Phased array integrated optical chip and optical phased array transmitting device |
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| CN201811643766.6A CN109581329B (en) | 2018-12-29 | 2018-12-29 | Phased array integrated optical chip and optical phased array transmitting device |
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| CN110658661A (en) * | 2019-08-30 | 2020-01-07 | 北京大学 | Phase calibration method and system for optical phased array |
| CN110720054A (en) * | 2019-07-19 | 2020-01-21 | 深圳市速腾聚创科技有限公司 | Phased array transmitting device, laser radar and automatic driving equipment |
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| WO2021227357A1 (en) * | 2020-05-15 | 2021-11-18 | 联合微电子中心有限责任公司 | Optical phased array, preparation method therefor, and phase shift control system |
| CN113671769A (en) * | 2020-05-15 | 2021-11-19 | 联合微电子中心有限责任公司 | Optical phased array based on phase shift control of lithium niobate thin film material and preparation method |
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| CN110658661A (en) * | 2019-08-30 | 2020-01-07 | 北京大学 | Phase calibration method and system for optical phased array |
| CN110658661B (en) * | 2019-08-30 | 2020-10-09 | 北京大学 | Phase calibration method and system for optical phased array |
| DE102019133096A1 (en) * | 2019-12-05 | 2021-06-10 | Sick Ag | Optoelectronic sensor and method for detecting an object |
| WO2021227357A1 (en) * | 2020-05-15 | 2021-11-18 | 联合微电子中心有限责任公司 | Optical phased array, preparation method therefor, and phase shift control system |
| CN113671769A (en) * | 2020-05-15 | 2021-11-19 | 联合微电子中心有限责任公司 | Optical phased array based on phase shift control of lithium niobate thin film material and preparation method |
| CN111856481A (en) * | 2020-07-29 | 2020-10-30 | 杭州视光半导体科技有限公司 | Scanner and coaxial and non-coaxial radar system applying same |
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