CN209727774U - A kind of plasma-induced transparent metamaterial sensor - Google Patents
A kind of plasma-induced transparent metamaterial sensor Download PDFInfo
- Publication number
- CN209727774U CN209727774U CN201920538188.3U CN201920538188U CN209727774U CN 209727774 U CN209727774 U CN 209727774U CN 201920538188 U CN201920538188 U CN 201920538188U CN 209727774 U CN209727774 U CN 209727774U
- Authority
- CN
- China
- Prior art keywords
- plasma
- graphene
- induced transparent
- resonance
- induced
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Investigating Or Analysing Materials By Optical Means (AREA)
Abstract
The utility model discloses a kind of plasma-induced transparent metamaterial sensors, belong to grapheme material in middle infrared band senser element, graphene surface plasma characteristics and plasma-induced transparent theory is utilized.The senser element is three dimensional periodic structure, structure composition are as follows: top layer is graphene split ring resonator and graphene double nano band structure, and middle layer is silica dioxide medium, and bottom is doping silicon substrate layer, three-decker made of stacking from top to bottom.The utility model mainly passes through the resonance spectrum that finite element method calculating simulation goes out plasma-induced transparent metamaterial sensor, sensor structure is optimized, the ability of plasma-induced transparent resonance is inspired with frequency range infrared in, and can effectively tune the linear and resonance frequency of plasma-induced transparent resonance.The utility model structure is simple, compact and reasonable, easy to process.
Description
Technical field
The utility model relates to a kind of plasma-induced transparent metamaterial sensors, and it is infrared in belong to grapheme material
Band sensor part application field.
Background technique
Electromagnetic induced transparency (EIT) is that one kind the phenomenon that absorption transmission enhancing, may be implemented to use as caused by quantum interference
The optic response of electromagnetic field control material.This phenomenon is observed in atomic system first, it can be in three-lever system
Middle realization.Atom EIT effect has been widely used for the fields such as slower rays, nonlinear optics.But the realization of atom EIT effect
Be it is highly difficult, need very harsh environment and operating condition, this greatly limits conventional atom EIT application and hair
Exhibition.In order to overcome these problems, people have investigated the new system similar to atom EIT system.And it is plasma-induced
Bright (PIT) is a type EIT effect, causes the extensive concern of people, and applies and lead in sensing, slower rays, optical storage etc.
Domain.The realization of PIT effect utilizes direct destructive interference between bright morphotype formula and dark-state mode usually using light and shade mode coupling
It generates.
In infrared frequency be mainly 15-150THz (2 μm-20 μm) range spectrum, middle infrared spectrum supervises in environment
It surveys, the every field such as sensing and astronomical detection have very huge potentiality, because the fingerprint of many materials falls in the spectral regions
Domain.Especially in sensory field, many molecular fingerprints are distributed in middle infrared band, these molecular fingerprints can pass through sensor
Accurately judge very much, this characteristic allows middle infrared band sensor widely to be paid close attention in recent years.But it is traditional
Sensor generally use metal and semiconductor material, there is biggish ohm and radiation loss, performance will receive serious damage
Consumption, quality factor and sensitivity are generally lower.In order in the loss of mid infrared region reduction, plasmon resonance (PFR)
It should show high quality factor.This feature has very strong effect for surface enhanced infrared absorption (SEIRA), red due in
Material-specific absorption of vibrations in outer finger-print region, can provide molecular information.And plasma-induced Transparency Phenomenon conduct
A kind of resonance form in plasmon shows ultra high quality factor and high sensitivity in middle infrared band, this shows
It has huge potentiality in fields such as sensings.
Research recently as researchers to graphene, the plasma-induced transparent effect based on graphene are also inhaled
Everybody concern is drawn.It is well known that the transparent effect of plasma based on the excitation of conventional metals Meta Materials, serious with one
The shortcomings that, i.e., once manufacture structure, the operation wavelength of transparent window just secure.And based on the plasma-induced of graphene
Obvious results is answered, and transparent window can be controlled by regulating and controlling the fermi level of graphene, therefore lead in such as slower rays device, sensor etc.
Domain presents very big application potential.This sensor may be implemented by the fermi level of biasing adjustment single-layer graphene to humorous
Vibrational spectrum carries out dynamic tuning, can make optical resonance Chong Die with molecular vibration fingerprint in this way.As novel grapheme material,
The research that its processing technology has also obtained vast researcher becomes maturation increasingly, and most common processing technology is CVD method.
Therefore the utility model has important scientific meaning and practical application value, also has in the practical application of middle infrared resonance field
Certain prospect.Furthermore the utility model may be that the design of middle infrared band sensor and development provide important theory
And technical support.
Summary of the invention
The technical problem to be solved by the utility model is to provide a kind of structures simply, can be convenient in middle infrared band
Ground excitation high performance plasmas induces transparent Meta Materials sensor.
The requirement such as structure difficulty or ease is considered, the utility model proposes a kind of plasma-induced transparent metamaterials to sense
Device provides important help for the high development that can reconcile high sensor based on graphene Meta Materials.
To achieve the above object, a kind of the technical solution adopted in the utility model are as follows: plasma-induced transparent metamaterial
Sensor, the sensor are three dimensional periodic structure, are used for using graphene split ring resonator and graphene double nano band structure
Excite plasma-induced transparent resonance;It is characterized by: structure composition from bottom to top be respectively one layer of doping silicon substrate layer, one
Layer silica dioxide medium layer, top layer are graphene split ring resonator and graphene double nano band structure.
The plasma-induced clear sensor of middle infrared band in the technical program, can be with based on grapheme material
It is made by graphite oxide reduction method, the processing of device further includes photoetching and lithographic technique.Graphite described in the utility model
The fermi level of alkene material selection can be between 0.5eV~1.0eV, this is experimentally doped and is easily achieved.
Actual gain of the present invention is:
(1) this sensor structure is simple and compact, can inspire in middle infrared band high performance plasma-induced
Bright resonance.
(2) the plasma-induced transparent transparent window that this sensor inspires is very sharp, it was demonstrated that having inspired property
The excellent plasma-induced transparent resonance of energy.
(3) using as the graphene double nano band of bright morphotype formula and as dark-state mode graphene split ring resonator it
Between destructive interference, to inspire high performance plasma-induced transparent resonance.
(4) the plasma-induced transparent resonance inspired of this sensor can addition polarize voltage by way of come
The fermi level of graphene is adjusted, to change plasma-induced transparent resonance frequency and resonant intensity, to meet sensing
The different demand of device.
Detailed description of the invention
Fig. 1 is the sensor unit structure schematic diagram;
Fig. 2 is the sensors topside graphene-structured structural schematic diagram;
Fig. 3 is the transmitted spectrum of the sensor plasma-induced transparent resonance under different graphene fermi levels;
Fig. 4 is the transmitted spectrum of the sensor plasma-induced transparent resonance under different material refractive index;
Contain in the above picture: px=py=200nm, R=80nm, G=20nm, W=20nm, L=80nm, S=20nm,
P=30nm, d=30nm, h=30nm.
Description of symbols: 1- adulterates silicon substrate layer;2- silica dioxide medium layer;3- graphene split ring resonator;4- stone
Black alkene double nano band.
Specific embodiment
It is specific embodiment of the utility model and in conjunction with attached drawing below, the technical solution of the utility model is made further
Description, but the utility model is not limited to the embodiment.
Attached drawing 1 is a cellular construction schematic diagram of plasma-induced transparent metamaterial sensor.Using structural unit
Length and width be px and py, adulterate silicon substrate layer with a thickness of h, silica dioxide medium layer with a thickness of d, graphene is open resonance
Ring and graphene double nano tape thickness are 1nm, and graphene split ring resonator radius length is R, the gap width of split ring resonator
For G, the width of split ring resonator is W, and the length of double nano band is L, and the width of double nano band is S, between double nano band between
Away from for P, graphene split ring resonator-double nano band structure is as shown in Fig. 2.
The working principle or the course of work of the sensor can be explained by following content.Since grapheme material is with non-
Often high electron mobility characteristics adjust the fermi level of graphene, enhance graphite by adding bias voltage to graphene
The conductivity of alkene layer makes it that the property of metal be presented, and inspires surface plasma with silica dioxide medium and air dielectric effect
Resonance body.The graphene film that graphite oxide reduction method can be used to make a layer thickness as 1nm herein, is then transferred to dioxy
On SiClx dielectric layer, graphene split ring resonator-double nano band structure array is obtained by mask lithography method.In order to tune graphite
The fermi level of alkene, the spin coating ionic gel layer above graphene layer add polarization voltage with doping silicon substrate layer jointly, this
The method of top gate adjusts the fermi level of graphene in which can be convenient.In middle infrared band, electromagnetic infrared wave is vertical in the middle
When being incident on graphene split ring resonator-double nano belt surface, can directly excite surface in graphene double nano band etc. from
Daughter excimer (SPPs), and dipole resonance is generated near 29.2THz.And graphene split ring resonator nothing near 29.2THz
The direct excitation resonance of method, but using the dipole resonance of graphene double nano band graphene can be inspired indirectly in this Frequency point
Six grades of resonance of split ring resonator.Destructive interference is generated between graphene double nano band and graphene split ring resonator at this time, because
This inspires plasma-induced transparent resonance.And the transparent window of plasma-induced transparent resonance has highly sensitive and product
High performance Application in Sensing may be implemented in the characteristics of prime factor.The different upper differences of gas or drop is passed through above sensor
Liquid, due to the refractive index of these gases or liquid difference so that the resonant excitation frequency of sensor infrared frequency range in is sent out
Raw offset, so as to detect to these gases or liquid, finally realizes Application in Sensing.
Attached drawing 3 is in different graphene fermi level EFUnder plasma-induced transparent metamaterial sensor transmitted light
Spectrum.The characteristic feature of plasma-induced transparent resonance is asymmetric line style, i.e., two resonance paddy and intermediate transparency window in figure
Mouth just indicates to have inspired typical plasma-induced transparent resonance.In transmitted spectrum, plasma-induced transparent resonance
Transparent window it is narrower, it was demonstrated that the resonance inspired is better, therefore transparent window sharp in figure just proves to have inspired performance
Excellent plasma-induced transparent resonance.The fermi level that graphene is adjusted by the method for addition polarization voltage, with stone
The fermi level of black alkene is increased to 0.9eV (0.9 electron-volt) from 0.5eV (0.5 electron-volt), plasma-induced transparent total
The enhanced strength of vibration, i.e., the transmissivity at resonance, which changes, to be increased, and resonance frequency is gradually increased also with the raising of fermi level, from
24-26THz is moved to 33-34THz, further improves the stimulating frequency in infrared frequency range.
Attached drawing 4 is when graphene fermi level is 0.7eV (0.7 electron-volt), and substance changes above sensor
When change, the variation of the caused sensor transmission curve of material refractive index variation, when refractive index n changes to 1.4 from 1, wait from
Daughter induces the position of the transparent window of transparent resonance to be displaced to 29.6THz from 25.1THz, then can be from transparent window
Change in location judges the material composition of under test gas or liquid.
Claims (3)
1. a kind of plasma-induced transparent metamaterial sensor, it is characterised in that: structure composition is respectively one layer from bottom to top
Silicon substrate layer, layer of silicon dioxide dielectric layer are adulterated, top layer is graphene split ring resonator and graphene double nano band structure.
2. a kind of plasma-induced transparent metamaterial sensor according to claim 1, it is characterised in that: doping silicon substrate
Bottom thickness h is 30nm, and silica dioxide medium layer thickness d is 30nm.
3. a kind of plasma-induced transparent metamaterial sensor according to claim 1, it is characterised in that: graphene is opened
Mouth resonant ring radius length is R=80nm, the gap width G=20nm of split ring resonator, the width W=of split ring resonator
20nm, the length L=80nm of double nano band, width S=20nm of double nano band, the spacing P=30nm between double nano band.
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201920538188.3U CN209727774U (en) | 2019-04-19 | 2019-04-19 | A kind of plasma-induced transparent metamaterial sensor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
CN201920538188.3U CN209727774U (en) | 2019-04-19 | 2019-04-19 | A kind of plasma-induced transparent metamaterial sensor |
Publications (1)
Publication Number | Publication Date |
---|---|
CN209727774U true CN209727774U (en) | 2019-12-03 |
Family
ID=68673158
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
CN201920538188.3U Expired - Fee Related CN209727774U (en) | 2019-04-19 | 2019-04-19 | A kind of plasma-induced transparent metamaterial sensor |
Country Status (1)
Country | Link |
---|---|
CN (1) | CN209727774U (en) |
Cited By (4)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111352175A (en) * | 2020-03-10 | 2020-06-30 | 山东大学 | Dynamically-adjustable graphene metamaterial terahertz device based on anapole mode and preparation method and application thereof |
CN111678887A (en) * | 2020-04-15 | 2020-09-18 | 中国计量大学 | Novel polarization insensitive sensor based on T-shaped graphene coupling |
CN111830011A (en) * | 2019-04-19 | 2020-10-27 | 中国计量大学 | Plasma-induced transparent metamaterial sensor |
CN111853154A (en) * | 2020-07-20 | 2020-10-30 | 上海交通大学 | Active coding adjustable metamaterial system for low-frequency-domain broadband vibration isolation |
-
2019
- 2019-04-19 CN CN201920538188.3U patent/CN209727774U/en not_active Expired - Fee Related
Cited By (5)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
CN111830011A (en) * | 2019-04-19 | 2020-10-27 | 中国计量大学 | Plasma-induced transparent metamaterial sensor |
CN111352175A (en) * | 2020-03-10 | 2020-06-30 | 山东大学 | Dynamically-adjustable graphene metamaterial terahertz device based on anapole mode and preparation method and application thereof |
CN111352175B (en) * | 2020-03-10 | 2021-04-27 | 山东大学 | Dynamically-adjustable graphene metamaterial terahertz device based on anapole mode and preparation method and application thereof |
CN111678887A (en) * | 2020-04-15 | 2020-09-18 | 中国计量大学 | Novel polarization insensitive sensor based on T-shaped graphene coupling |
CN111853154A (en) * | 2020-07-20 | 2020-10-30 | 上海交通大学 | Active coding adjustable metamaterial system for low-frequency-domain broadband vibration isolation |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
CN209727774U (en) | A kind of plasma-induced transparent metamaterial sensor | |
He et al. | Graphene-based metasurface sensing applications in terahertz band | |
An et al. | High-sensitivity refractive index sensor based on D-shaped photonic crystal fiber with rectangular lattice and nanoscale gold film | |
Patnaik et al. | Graphene-based conducting metal oxide coated D-shaped optical fiber SPR sensor | |
CN109142472A (en) | Based on annulus-semi-ring to the graphene sensor of coupled structure | |
Khamh et al. | As good as gold and better: conducting metal oxide materials for mid-infrared plasmonic applications | |
Liu et al. | Ex-centric core photonic crystal fiber sensor with gold nanowires based on surface plasmon resonance | |
CN111830011A (en) | Plasma-induced transparent metamaterial sensor | |
An et al. | Metal oxide-graphene-based quasi-D-shaped optical fiber plasmonic biosensor | |
CN108051408B (en) | Graphene-based double-layer coupling type Fano resonance sensor | |
CN104374745A (en) | Sensor based on Fano resonance characteristics of dielectric nanostructure | |
Li et al. | Quadruple plasmon-induced transparency and tunable multi-frequency switch in monolayer graphene terahertz metamaterial | |
Zhu et al. | Terahertz imaging sensor based on the strong coupling of surface plasmon polaritons between PVDF and graphene | |
CN111795946A (en) | Phase sensing and fluorescence/Raman enhancement chip of all-dielectric BIC structure | |
CN207610988U (en) | Based on infrared highly sensitive electric tunable sensors in graphene | |
Wei et al. | Reflection-type infrared biosensor based on surface plasmonics in graphene ribbon arrays | |
Dhanasekar et al. | Refractive index sensing using metamaterial absorbing augmentation in elliptical graphene arrays | |
CN109490997A (en) | The perfect absorber of graphene array based on circle perforation | |
Fan et al. | Highly tunable and sensitive plasmon induced transparency modulator with graphene metasurface | |
CN110146468B (en) | Surface plasma optical fiber sensor with circular composite hole array structure | |
Wang et al. | Slow-light and sensing performance analysis based on plasmon-induced transparency in terahertz graphene metasurface | |
Chen et al. | A polarization-insensitive dual plasmon-induced transparency terahertz sensor based on graphene metamaterial | |
CN209525547U (en) | A kind of plasma-induced transparent resonator of the middle infrared band based on graphene | |
Qi et al. | Multiple Fano resonances inspired by bound states in all-dielectric double-opening resonant ring metasurfaces | |
Huang et al. | Triple-wavelength infrared plasmonic thermal emitter using hybrid dielectric materials in periodic arrangement |
Legal Events
Date | Code | Title | Description |
---|---|---|---|
GR01 | Patent grant | ||
GR01 | Patent grant | ||
CF01 | Termination of patent right due to non-payment of annual fee | ||
CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20191203 Termination date: 20200419 |