CN209627337U - A kind of 5G high-performance LTCC bandpass filter inhibiting higher hamonic wave - Google Patents
A kind of 5G high-performance LTCC bandpass filter inhibiting higher hamonic wave Download PDFInfo
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Abstract
The utility model discloses a kind of LTCC bandpass filter, including matrix, input terminal electrode, output terminal electrode, ground connection termination electrode and internal circuit；The internal circuit includes three parallel resonances, three coupling inductances, two connection capacitors and a source-load coupled capacitor, further includes three pieces of ground connection pole plates, and one of ground connection pole plate uses defect ground structure；Realize these inductance, filter is made on LTCC green surface, and by punching, filling perforation, wire mark, lamination and sintering process in the conductor printing of capacity cell；Internal circuit uses LTCC vertical interconnecting structure, and inductance uses twin stack configuration, and capacitor uses MIM formula capacitor, is connected between inductance and capacitor by vertical through hole.The bandpass filter is small in size, and production cost is low, can be mass, and passband introduces three transmission zeros up to 1GHz and small with interior Insertion Loss, and Out-of-band rejection is high and low-resistance belt sideband is precipitous, and using mirror image, performance reliability is high.
Description
Technical field
The utility model relates to wave filter technology fields, and in particular to a kind of 5G high-performance for inhibiting higher hamonic wave
LTCC bandpass filter.
Background technique
Microwave band-pass filter is a critical component of Microwave radio frequency system, as microwave circuits emulate in recent years
The development of technology and technique, it is also higher and higher to the miniature requirement of radio frequency system, and the miniaturization of filter is even more first when it
Punching, the volume for how reducing filter as much as possible in the case where guaranteeing certain performance indicator become compact radio frequency system needs
The major issue solved.Meanwhile the fast development of wireless communication system, frequency resource growing tension, in order to inhibit external
The higher hamonic wave that the devices such as signal and frequency mixer, oscillator generate, improves the electrical property of complete machine, it is desirable that filter has good
Out-of-band rejection ability.
Low-temperature co-fired ceramics is a kind of Electronic Encapsulating Technology, using multi-layer ceramics technique, passive device can be placed in ceramics
Media interior.LTCC (low-temperature co-fired ceramics) technology is the multi-layer ceramics technology that developed recently gets up, can using the technology
To realize three-dimensional structure that traditional ceramics substrate process cannot achieve.Had very using LTCC technology design microwave passive component
Big flexibility.The advantage for how making full use of LTCC technique determines the structure of filter by rational deployment, and makes
Design has certain stability, and the success rate that product is still able to maintain within the scope of necessary mismachining tolerance is that LTCC filter is set
One critical issue of meter.
However, the frequency response of conventional filter leave main passband certain distance (usually main passband central frequency
Integral multiple) when can generate parasitic passband, be not suitable for require inhibit harmonic wave application.
Utility model content
In view of the deficiencies of the prior art, the utility model proposes a kind of 5G high-performance LTCC band logicals for inhibiting higher hamonic wave
Filter, the filter use LTCC technology, greatly reduce the volume of device, only 1.6mm*0.8mm*0.6mm；It is internal
Circuit uses bilateral symmetry, by rational deployment and using the coupling between element, reduces the complexity of design
Degree；Meanwhile increasing a coupled capacitor between source and load, multiple transmission zeros are generated in low side stopband, in three resonance lists
Three groups of LC series resonances are increased separately in member, are formed transmission zero in high-end stopband, while inhibiting stopband higher hamonic wave, are increased
Big stopband attenuation, obtains wider stopband range.Specific technical solution is as follows:
A kind of 5G high-performance LTCC bandpass filter inhibiting higher hamonic wave, including matrix, input terminal electrode, output end electricity
Pole, ground connection termination electrode and internal circuit；The intrinsic silicon includes multilayer LTCC ceramic substrate, wherein the input terminal
Electrode and output terminal electrode are respectively arranged on the opposite end on the filter length direction, and the ground connection termination electrode is set to filtering
On the outside of middle part on device length direction；
The internal circuit includes the first inductance L1 and first capacitor C1, parallel connection for the first resonance of composition being connected in parallel
The third inductance L3 of the second inductance L2 and the second capacitor C2 of the second resonance of composition of connection, the composition third resonance being connected in parallel
It by capacitance connection between resonance further include source-load coupled capacitor C, three pieces of ground connection pole plates are one of with third capacitor C3
Using defect ground structure, realize the conductor printing of these inductance, capacity cell on LTCC green surface, and by punching, filling perforation,
Filter is made in wire mark, lamination and sintering process；Filter integrally uses the distinctive vertical interconnecting structure of LTCC；
First, second, third inductance L1, L2, L3 realizes that different ceramics are situated between using the laminated inductor on multiple layer ceramic dielectric
Metallic conductor on matter layer is connected by through-hole, and by adjusting the wire length of every layer of laminated inductor line, line width adjusts inductance value；
The first, second, third, fourth, the 5th and source-load coupled capacitor C1, C2, C3, C4, C5, C is made pottery by multilayer
The plane capacitance pole plate of ceramic dielectric layer realizes, the capacitor plate between different ceramic dielectric layers by between pole plate intercouple with
And through-hole realizes interconnection, carrys out capacitance value by adjusting the size of pole plate；
Bandpass filter internal circuit part shares 11 layers, and the 1st layer, 11th layer and the 3rd layer are full wafer ground plane,
Wherein the 3rd layer of ground plane is defect ground structure, and three layers of ground plane are connected with the ground connection termination electrode of matrix two sides；
On the left of the internally positioned circuit structure of first resonance of bandpass filter, first capacitor C1 is located at the 4th layer of circuit, and one
End is connected by through-hole with junior's pole plate of the 6th layer of the 4th capacitor C4, and the first inductance L1 is located at circuit the 8th, and the 9th layer, wherein electric
Sense one end L1 is connected with the ground connection termination electrode, and the other end is connected by through-hole with capacitor C4 bottom crown；
On the right side of the internally positioned circuit structure of third resonance, third capacitor C3 is located at the 4th layer of circuit, and one end passes through through-hole and the
Junior's pole plate of 6 layer of the 5th capacitor C5 is connected, and third inductance L3 is located at circuit the 8th, the 9th layer, wherein the one end inductance L3 with it is described
Ground connection termination electrode be connected, the other end is connected by through-hole with capacitor C5 bottom crown；
In the middle part of the internally positioned circuit structure of second resonance, the second capacitor C2 is located at the circuit second layer, is passed through and is lacked by through-hole
It falls into ground structure to be connected with the 5th layer of dumbbell shape pole plate, the pole plate and C4 bottom crown and C5 bottom crown composition capacitor C4, C5, second
Inductance L2 is located at the 8th, the 9th layer of circuit, and wherein the one end inductance L2 is connected by through-hole with 11th layer ground plane, and the other end passes through logical
Hole is connected with C2；
Source-load coupled capacitor is located at the 7th layer of circuit, is dumbbell shape structure, generates transmission zero in low-resistance belt, meanwhile,
L1 forms series resonance as lower ground inductance and C1 again, forms transmission zero in high-end stopband, similarly, L2 and C2, L3 and C3 points
Not Xing Cheng series resonance, in high-end formation transmission zero.
Further, the one end first capacitor C1 is connected by through-hole with the 10th layer of one pole plate of left side of circuit, the pole plate other end
It is connected with left end input port；Third one end capacitor C3 is connected by through-hole with the 10th layer of one pole plate of right side of circuit, and pole plate is another
End is connected with right end output port.
Further, the structure of inductance L1, the structure of capacitor C1, C4 and inductance L3, capacitor C3, C5 are in mirror symmetry.
Further, the bottom crown of the 6th layer capacitance C4 of circuit, C5 are incomplete rectangular configuration, and there are radiuses to be
The a quarter circumferential notch of 0.22mm.
Further, the matrix of filter is having a size of 0.8mm × 1.6mm × 0.6mm.
Further, the free transmission range of filter is 4.99-5.95GHz, and passband maximum insertion is 1.2dB, low
A transmission zero is generated respectively at end resistance band 2.45GHz, 3.68GHz, and a transmission is generated at high-end stopband 12.73GHz
Zero point, the decaying at high-end stopband 15GHz are greater than 25dB.
The beneficial effects of the utility model are as follows:
(1) LTCC multilayer technology is used, keeps the structure of filter more compact, this technique can effectively reduce first device size,
Meet the trend of miniaturization；
(2) creative to have used three layers of internal ground structure, the use of top layer and bottom layer ground layer can effectively reduce outer
The influence of portion's circuit, the use of internal circuit third layer defect ground structure, parasitic coupling effect that can effectively between straining element make
The performance of filter is more stable, meanwhile, ground plane is provided for ground connection parallel coupled capacitor, so that the design of parallel resonance is more
Flexibly, the complexity for greatly optimizing design realizes three rank bandpass filterings with less element, relatively simple structure
Device reduces the size of device to a certain extent, reduces the difficulty of debugging；
(3) source-load coupled capacitor application generates transmission zero in low side stopband, it will be further appreciated that, inductance
L1, L2, L3 form series resonance, constitute while as parallel resonance unit resonant inductance, and respectively with C1, C2, C3
LC series resonance and capacitor C reconstruct the double resonance cellular construction of parallel resonance, and the use of this structure greatly simplifies inside
Circuit structure increases space utilization rate, while zero point is generated at high-end stopband 12.73GHz, so that second harmonic 10GHz
Place inhibits to reach 25dB, inhibits to reach 30dB at triple-frequency harmonics 15GHz, effectively inhibits higher hamonic wave, increase stopband range,
In conjunction with low side stop-band zeros, high stop band rejection is realized.
(4) filter integrally uses 3 rank symmetrical expression resonant elements, and less order makes logical in-band insertion loss maximum only
For 1.2dB, the index of filter with low insertion loss is reached.
(5) in order to overcome conventional planar spiral inductance in vertical direction utilization efficiency it is low and it is spuious be difficult to inhibit lack
Point uses twin stack inductance herein, under the premise of changing inductance value by a small margin, significantly promotes inductance Q value, is further promoted
The filtering performance of entire filter.
Detailed description of the invention
Fig. 1 is the outline drawing of the LTCC bandpass filter of the utility model；
Fig. 2 is the internal circuit diagram of the LTCC bandpass filter of the utility model；
Fig. 3 is the facing structure figure of the LTCC bandpass filter of the utility model；
Fig. 4 is the 1st layer of 3D structure chart of the LTCC bandpass filter of the utility model；
Fig. 5 is the 2nd layer of 3D structure chart of the LTCC bandpass filter of the utility model；
Fig. 6 is the 3rd layer of 3D structure chart of the LTCC bandpass filter of the utility model；
Fig. 7 is the 4th layer of 3D structure chart of the LTCC bandpass filter of the utility model；
Fig. 8 is the 5th layer of 3D structure chart of the LTCC bandpass filter of the utility model；
Fig. 9 is the 6th layer of 3D structure chart of the LTCC bandpass filter of the utility model；
Figure 10 is the 7th layer of 3D structure chart of the LTCC bandpass filter of the utility model；
Figure 11 is the 8th layer of 3D structure chart of the LTCC bandpass filter of the utility model；
Figure 12 is the 9th layer of 3D structure chart of the LTCC bandpass filter of the utility model；
Figure 13 is the 10th layer of 3D structure chart of the LTCC bandpass filter of the utility model；
Figure 14 is the 11th layer 3D structure chart of the LTCC bandpass filter of the utility model；
Figure 15 is the S parameter simulation result diagram of the LTCC bandpass filter of the utility model, and wherein Figure 15 a is s21 parameter
Result figure, Figure 15 b are s11 parametric results figure.
Specific embodiment
The utility model is described in detail below according to attached drawing and preferred embodiment, the purpose of this utility model and effect will become
It must be more clearly understood that, below in conjunction with drawings and examples, the present invention will be further described in detail.It should be appreciated that herein
Described specific embodiment is only used to explain the utility model, is not used to limit the utility model.
Fig. 1 is the monnolithic case figure for the bandpass filter realized using LTCC technology, including LTCC ceramic matrix shell.In
Grounding electrode GND of the welding metal conductor strip as filter has been printed on the outside of middle part on length thereof direction；It is filtering
Opposite end on wave device length thereof direction covers solderable metal conductor as the input electrode IN of filter and output
Electrode OUT.
LTCC bandpass filter outer dimension is 0.8mm × 1.6mm × 0.6mm in the present embodiment, used LTCC pottery
Ceramic dielectric relative dielectric constant is 9.8, loss angle tangent 0.002, every layer of ceramic dielectric with a thickness of 0.05mm, metallic conductor
Material is metallic silver.
Fig. 2 is the internal circuit diagram of the bandpass filter of the utility model, and Fig. 3 is LTCC bandpass filter facing structure
Figure.It can be seen from the figure that 3D structure integrally uses perpendicular interconnection form, and one shares 11 layers；The top layer of circuit, bottom and
3rd layer is internally, wherein third layer is defect ground structure, the design and cloth of convenient resonant capacitance C1, C2, the C3 over the ground of this structure
Office, and the coupling and ghost effect that can be effectively reduced between component；Since required inductance value is smaller, inductance uses twin stack
Formula structure；Capacitor uses MIM formula structure, and the capacitor of the structure possesses biggish Q value, and performance is stablized；
From figure 3, it can be seen that the first resonance and third resonance are in mirror symmetry, the i.e. size of element, phase in 3D circuit
It is all the same to position；The 4th layer of left side pole plate and the 3rd layer of stratum form direct-to-ground capacitance C1 in circuit structure, and one end passes through through-hole
With the tenth layer of connection pole plate, then it is connected with input terminal, the other end is connected by through-hole with the 8th, the 9th layer one end inductance L1,
Form parallel resonance, inductance L1 other end ground connection；Third resonance structure is identical as the first resonance structure；The 2nd layer of pole plate of circuit with
1st, the 3rd layer of stratum forms direct-to-ground capacitance C2, is connected by through-hole with the 8th, the 9th layer one end inductance L2, and it is in parallel to form second
Resonance, inductance L2 other end ground connection；The 6th layer of circuit or so pole plate is respectively the bottom crown of capacitor C4, capacitor C5, with circuit the 5th
Layer pole plate is coupled out capacitor C4 and C5；The bottom crown of circuit the 6th layer capacitance C4, C5 are incomplete rectangular configuration, and there are radiuses
For a quarter circumferential notch of 0.22mm.Meanwhile being connected between resonance at different levels by capacitor；Wherein, capacitor C4 bottom crown one
It holds and is connected with the through-hole for connecting C1, L1, one end of step is connected with the through-hole for connecting C3, L3 under capacitor C5；The above structure is constituted
The Basic Topological of bandpass filter has filter effect；In order to increase the attenuating of filter stop bend, circuit is increased
7th layer of dumbbell shape pole plate is coupled with the 6th layer of pole plate, forms source-load coupled capacitor simultaneously, and L1 is used as lower ground inductance and C1 again
Series resonance is formed, forms transmission zero in high-end stopband, similarly, L2 and C2, L3 and C3 are respectively formed series resonance, high-end
Transmission zero is formed, multiple transmission zeros are increased in stopband with this, improve stopband characteristic.Filter circuit specific structure such as Fig. 4-
Shown in Figure 14.
Figure 15 is the S parameter analogous diagram of this LTCC bandpass filter, as shown, in filter passband range 4.99-
In 5.95GHz, filter maximum insertion is less than 1.2dB, generates one respectively at low side stopband 2.45GHz, 3.68GHz
Transmission zero possesses precipitous low side stopband characteristic curve, and a transmission zero is generated at high-end stopband 12.73GHz, so that
Decaying at 10GHz is greater than 25dB, and decaying reaches 30dB at 30GHz, it is suppressed that the higher hamonic wave of high-end stopband, so that filter
With wider stopband characteristic.
To sum up, LTCC bandpass filter provided by the utility model has small in size, and insertion loss is small, and Out-of-band rejection is high,
The wide feature of stopband range can carry out patch, welding, convenient for integrated with other microwave components.And the utility model is base
In LTCC technique, manufacturing cost is low, suitable for mass production.
It will appreciated by the skilled person that the foregoing is merely the preferred embodiments of utility model, and do not have to
In limitation utility model, although utility model is described in detail referring to previous examples, for those skilled in the art
Member for, can still modify to the technical solution of aforementioned each case history, or to part of technical characteristic into
Row equivalent replacement.With within principle, modification, equivalent replacement for being made etc. should be included in practical new all spirit in utility model
Within the protection scope of type.
Claims (6)
1. a kind of 5G high-performance LTCC bandpass filter for inhibiting higher hamonic wave, including matrix, input terminal electrode, output end electricity
Pole, ground connection termination electrode and internal circuit；The intrinsic silicon includes multilayer LTCC ceramic substrate, wherein the input terminal
Electrode and output terminal electrode are respectively arranged on the opposite end on the filter length direction, and the ground connection termination electrode is set to filtering
On the outside of middle part on device length direction；
The internal circuit includes the first inductance L1 and first capacitor C1 for the first resonance of composition being connected in parallel, is connected in parallel
The the second inductance L2 and the second capacitor C2 of the second resonance of composition, the third inductance L3 for the composition third resonance being connected in parallel and
Three capacitor C3 further include source-load coupled capacitor C, three pieces of ground connection pole plates, one of use by capacitance connection between resonance
Defect ground structure, realize the conductor printing of these inductance, capacity cell on LTCC green surface, and pass through punching, filling perforation, net
Filter is made in print, lamination and sintering process；Filter integrally uses the distinctive vertical interconnecting structure of LTCC；
First, second, third inductance L1, L2, L3 is using the laminated inductor realization on multiple layer ceramic dielectric, different ceramic dielectric layers
On metallic conductor connected by through-hole, by adjusting the wire length of every layer of laminated inductor line, line width adjusts inductance value；
The first, second, third, fourth, the 5th and source-load coupled capacitor C1, C2, C3, C4, C5, C is situated between by multi-layer ceramics
The plane capacitance pole plate of matter layer realizes that the capacitor plate between different ceramic dielectric layers is by intercoupling between pole plate and leads to
Interconnection is realized in hole, carrys out capacitance value by adjusting the size of pole plate；
Bandpass filter internal circuit part shares 11 layers, and the 1st layer, 11th layer and the 3rd layer are full wafer ground plane, wherein
3rd layer of ground plane is defect ground structure, and three layers of ground plane are connected with the ground connection termination electrode of matrix two sides；
On the left of the internally positioned circuit structure of the first resonance of bandpass filter, first capacitor C1 is located at the 4th layer of circuit, and one end is logical
Through-hole is crossed to be connected with junior's pole plate of the 6th layer of the 4th capacitor C4, the first inductance L1 is located at circuit the 8th, and the 9th layer, wherein inductance L1
One end is connected with the ground connection termination electrode, and the other end is connected by through-hole with capacitor C4 bottom crown；
On the right side of the internally positioned circuit structure of third resonance, third capacitor C3 is located at the 4th layer of circuit, and one end passes through through-hole and the 6th layer
Junior's pole plate of 5th capacitor C5 is connected, and third inductance L3 is located at circuit the 8th, and the 9th layer, wherein the one end inductance L3 connects with described
Ground termination electrode is connected, and the other end is connected by through-hole with capacitor C5 bottom crown；
In the middle part of the internally positioned circuit structure of second resonance, the second capacitor C2 is located at the circuit second layer, across defect by through-hole
Structure is connected with the 5th layer of dumbbell shape pole plate, and the pole plate and C4 bottom crown and C5 bottom crown constitute capacitor C4, C5, the second inductance
L2 is located at the 8th, the 9th layer of circuit, and wherein the one end inductance L2 is connected by through-hole with 11th layer ground plane, the other end pass through through-hole and
C2 is connected；
Source-load coupled capacitor is located at the 7th layer of circuit, is dumbbell shape structure, generates transmission zero in low-resistance belt, meanwhile, L1 is again
Series resonance is formed as lower ground inductance and C1, forms transmission zero in high-end stopband, similarly, L2 and C2, L3 and C3 distinguish shape
At series resonance, in high-end formation transmission zero.
2. LTCC bandpass filter according to claim 1, which is characterized in that the one end first capacitor C1 passes through through-hole and electricity
A pole plate is connected on the left of the 10th floor of road, and the pole plate other end is connected with left end input port；Third one end capacitor C3 by through-hole with
The 10th layer of one pole plate of right side of circuit is connected, and the pole plate other end is connected with right end output port.
3. LTCC bandpass filter according to claim 1, which is characterized in that inductance L1, the structure of capacitor C1, C4 and electricity
Feel L3, the structure of capacitor C3, C5 are in mirror symmetry.
4. LTCC bandpass filter according to claim 1, which is characterized in that the 6th layer capacitance C4 of circuit, the bottom crown of C5
For incomplete rectangular configuration, there are a quarter circumferential notches that radius is 0.22mm.
5. LTCC bandpass filter according to claim 1, which is characterized in that the matrix of filter having a size of 0.8mm ×
1.6mm×0.6mm。
6. LTCC bandpass filter according to claim 1, which is characterized in that the free transmission range of filter is 4.99-
5.95GHz, passband maximum insertion are 1.2dB, generate a transmission zero respectively at low side stopband 2.45GHz, 3.68GHz
Point generates a transmission zero at high-end stopband 12.73GHz, and the decaying at high-end stopband 15GHz is greater than 25dB.
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| CN109889176A (en) * | 2019-04-01 | 2019-06-14 | 中国计量大学上虞高等研究院有限公司 | A kind of 5G high-performance LTCC bandpass filter inhibiting higher hamonic wave |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
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| CN109889176A (en) * | 2019-04-01 | 2019-06-14 | 中国计量大学上虞高等研究院有限公司 | A kind of 5G high-performance LTCC bandpass filter inhibiting higher hamonic wave |
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Effective date of registration: 20230808 Address after: No.78 Dian Street, Xinhua District, Shijiazhuang City, Hebei Province, 050000, China, 2-4-102 Patentee after: SHIJIAZHUANG LEIXUN ELECTRONIC TECHNOLOGY Co.,Ltd. Address before: 230000 floor 1, building 2, phase I, e-commerce Park, Jinggang Road, Shushan Economic Development Zone, Hefei City, Anhui Province Patentee before: Dragon totem Technology (Hefei) Co.,Ltd. Effective date of registration: 20230808 Address after: 230000 floor 1, building 2, phase I, e-commerce Park, Jinggang Road, Shushan Economic Development Zone, Hefei City, Anhui Province Patentee after: Dragon totem Technology (Hefei) Co.,Ltd. Address before: 401.402, A1 / F, Zhejiang new science and Technology Park, no.2288, Jiangxi Road, Cao'e street, Shangyu District, Shaoxing City, Zhejiang Province Patentee before: CHINA JILIANG UNIVERSITY SHANGYU ADVANCED RESEARCH INSTITUTE Co.,Ltd. |
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