CN209608647U - A kind of small base station of Double-mode multifrequency power 4G LTE trade Special Network - Google Patents

Abstract

The utility model discloses a kind of small base stations of Double-mode multifrequency power 4G LTE trade Special Network, it is characterized in that, include transmission channel and receiving channel in the circuit structure of small base station: including A/D conversion circuit, Balun circuit and radio frequency amplifier in transmission channel, the radio frequency amplifier is connected by Balun circuit with A/D conversion circuit, wherein the effect of Balun circuit is that the differential signal of A/D conversion circuit is conveyed to radio frequency amplifier, and the effect of the radio frequency amplifier is that the radiofrequency signal for generating A/D conversion circuit amplifies and passes through radio frequency mouth and launches；The advantageous effects of the utility model are: realizing the flexible configuration of region hot spot 4G LTE Double-mode multifrequency power, meet the 4G network insertion requirement of different systems terminal, provide effective support for the network coverage of hot spot region.

Description

A kind of small base station of Double-mode multifrequency power 4G LTE trade Special Network

Technical field

The utility model relates to a kind of small base station of trade Special Network more particularly to a kind of Double-mode multifrequency power 4G LTE trade Special Networks Small base station.

Background technique

With continuous general and mobile Internet business the development of the terminal of new generation such as smart phone, wireless data service Present lasting rapid growth trend.Covering and data transmission to 4G network propose increasingly higher demands.It is full The ever-increasing user's mobile data services demand of foot, each operator actively dispose 4G LTE network (including TD-LTE and FDD- LTE), the coverage rate and transmission rate of 4G LTE network are strongly improved.

For typical cellular network, operator generallys use the deployment that macro base station carries out continuous covering and indoor shallow-layer, adopts The deployment of outdoor hot spot and indoor depth covering is carried out with small base station.The standard that different operators use is different, such as China Mobile The TD-LTE network of deployment, the FDD-LTE network of China Telecom and China Unicom deployment.And same standard has that there are multiple frequencies Section, such as Band1, Band3 of FDD, Band38, Band39, Band40, Band41 etc. of TDD.

In addition to operator field, there are also a large amount of industrial application such as Emergent scheduler system, Driving Test Transmission system, police security protections System, Technology for Communication System of Coal Mine etc., they propose more customization demands to small base station.Wish that same plank can support FDD With TDD both of which, while whole frequency ranges that multiple frequency ranges or even current domestic three big operators can be supported to use.And it currently leads It flows small base station scheme and only supports some special frequency channel of certain mode, for Double-mode multifrequency power demand, need to arrange in pairs or groups the small base station of muti-piece Plate realizes that system complexity is high, and cost also remains high.

Utility model content

The purpose of this utility model is to provide a kind of small base stations of Double-mode multifrequency power 4G LTE trade Special Network, solve existing skill Shortcoming existing for art.

The utility model adopts the following technical solution realizes:

The small base station of a kind of Double-mode multifrequency power 4G LTE trade Special Network, which is characterized in that wrapped in the circuit structure of small base station Include transmission channel and receiving channel:

It is described to penetrate including A/D conversion circuit, Balun circuit (HHM17147A1) and radio frequency amplifier in transmission channel Audio amplifier is connected by Balun circuit with A/D conversion circuit, and wherein the effect of Balun circuit is by the difference of A/D conversion circuit Sub-signal is conveyed to radio frequency amplifier (radio frequency amplifier is wideband PA, MZ25333BT1), and the effect of the radio frequency amplifier is The radiofrequency signal that A/D conversion circuit generates is amplified and passes through radio frequency mouth and is launched；

Including RF switch low-noise amplifier (LNA) and be connected with the low-noise amplifier, institute in receiving channel The effect for stating low-noise amplifier is that the radiofrequency signal that will be received amplifies and is sent to RF switch (HWS486), institute The effect for stating RF switch (HWS486) is will to receive the single-ended radio frequency signal come to switch to FDD receiving path or TDD on demand Receiving path, in which: TDD single-ended radio frequency signal is entered A/D conversion circuit (AD9363) by capacitor, and FDD single-ended radio frequency is believed It number is converted to differential signal by Balun circuit (wideband BALUN HHM17147A1) and is input to A/D conversion circuit (AD9363).

It include radio frequency amplifier and radiofrequency launcher in the circuit structure of base station, the radio frequency amplifier passes through Balun circuit is connected with A/D conversion circuit, and the radiofrequency launcher passes through the RF switch being serially connected and Balun electricity Road is connected with A/D converter circuit, and the A/D conversion circuit is connected with baseband processing chip, the baseband processing chip and Ethernet Circuit is connected.

Further, plate interior power is provided in the small base station.

Further, it is connected by pi-network with attenuator circuit between the radio frequency amplifier and Balun circuit, in institute It states and is provided with radio-frequency channel capacitor between pi-network and the attenuator circuit.

The advantageous effects of the utility model are: the flexible configuration of region hot spot 4G LTE Double-mode multifrequency power is realized, it is full The 4G network insertion requirement of foot different systems terminals, for the network coverage of hot spot region provides effective support.This is practical new Type is assembled in base station equipment, mostly is being carried out deployment and operational effect is good, is being fully met customer demand.For small base Plate of standing is mostly single mode single-frequency product, can not specific application Double-mode multifrequency power requirement, the utility model can be in the small base station of monolithic Upper support TDD and FDD both of which and multiple frequency ranges, mode required for client can be configured by software exchange and frequency Section.To substantially reduce system complexity and deployed with devices cost.It is more that the utility model realizes region hot spot 4G LTE bimodulus The flexible configuration of frequency meets the 4G network insertion requirement of different systems terminal, has provided for the network coverage of hot spot region Effect is supported.

Detailed description of the invention

Fig. 1 is the schematic block circuit diagram of small base station.

Fig. 2 is balun circuit diagram.

Fig. 3 is that balun circuit with PA signal connect circuit diagram.

Fig. 4 is radio frequency amplifier chip and its peripheral circuit.

Fig. 5 is the circuit diagram between radio frequency amplifying circuit and radio frequency plug.

Fig. 6 is the circuit diagram of wide frequency low-noise amplifier.

Fig. 7 is radio-frequency switch circuit schematic diagram.

Fig. 8 is that TDD receives the circuit diagram for entering A/D converter circuit.

Fig. 9 is that FDD receives the circuit diagram for entering A/D converter circuit.

Specific embodiment

By the following description of the embodiment, public understanding the utility model will more be facilitated, but can't should Specific embodiment given by applicant is considered as the limitation to technical solutions of the utility model, any pair of component or technology are special The definition of sign be changed and/or to overall structure make form and immaterial convert the technology of the utility model of being regarded as Protection scope defined by scheme.

The small base station of Double-mode multifrequency power 4G LTE trade Special Network as shown in Figure 1 includes hair in the circuit structure of base station Penetrate channel and receiving channel:

Include in transmission channel A/D conversion circuit, Balun circuit (chip model be HHM17147A1) in circuit and Radio frequency amplifier, radio frequency amplifier are connected by Balun circuit with A/D conversion circuit, and wherein the effect of Balun circuit is by A/ The differential signal of D conversion circuit is conveyed to radio frequency amplifier, and radio frequency amplifier is wideband PA, and the chip model in circuit is MZ25333BT1, the effect of radio frequency amplifier are that the radiofrequency signal for generating A/D conversion circuit amplifies and passes through radio frequency mouth Launch；

Including RF switch low-noise amplifier (LNA) and be connected with the low-noise amplifier, institute in receiving channel The effect for stating low-noise amplifier is that the radiofrequency signal that will be received amplifies and be sent to RF switch, RF switch electricity Chip model in road is HWS486, and the effect of RF switch is will to receive the single-ended radio frequency signal come to switch to FDD on demand Receiving path or TDD receiving path, in which: TDD single-ended radio frequency signal enters A/D conversion circuit (A/D conversion circuit by capacitor In chip model be AD9363), and FDD single-ended radio frequency signal is that differential signal is input to A/D turn by Balun circuit conversion Circuit is changed, the chip model in the present embodiment in Balun circuit is wideband HHM17147A1, the connection relationship of schematic block circuit diagram Are as follows: it include radio frequency amplifier and radiofrequency launcher in circuit structure, radio frequency amplifier passes through Balun circuit and A/D conversion circuit It is connected, radiofrequency launcher passes through the RF switch being serially connected and the Balun circuit is connected with A/D converter circuit, A/D conversion Circuit is connected with baseband processing chip, and baseband processing chip is connected with ethernet circuit, is provided in plate in small base station electric Source.

As shown in Fig. 2, the model of the chip T2 in transmission channel wideband BALUN circuit is HHM17147A1, the 1 of chip T2 Number pin UNBAL connection single-ended radio frequency signal, is herein radio frequency transmissions, is input to wideband PA MMZ25333BT1, No. 2 pipes Foot DC/GND is connected by inductance L3 with power vd D, and is grounded by capacitor C316, and power vd D provides the power supply of 1.3V, inductance L3 and capacitor C316 plays the role of filtering, and No. 3 pin BAL1 connection difference radio-frequency signals, effect is that access chip AD9363 is defeated Differential radio frequency out emits signal, and No. 5 pin GND connection the earth, No. 6 pin NC are without connection.

As shown in figure 3, capacitor C310, capacitor C311 and capacitor C312 form a pi-network, to do radio-frequency channel Match, by actual measurement, C311 and C312 need to only weld C310 without welding.Capacitor C416, capacitor C417, capacitor C418 group At an attenuator circuit, decay to power, decay 8dB or so in figure.If there is other attenuation requirements, it is only necessary to adjust The resistance value of this three pellet, capacitor C443 are radio-frequency channel capacitor.

Radio frequency amplifier chip as shown in Figure 4 and its peripheral circuit, the model MMZ25333BT1 of chip U31, chip For 1,2,3,5,6,7,11,12,13,14,18,21, No. 23 pin NC of U31 without connection, the effect of No. 4 pin RFin is input Radiofrequency signal, radiofrequency signal is without amplification herein, and the effect of No. 8 pin VBA1 is the first rank amplification bias voltage, to open First rank amplifier.R279 plays current limliting antihypertensive effect.Capacitor C423, capacitor C424, the one end capacitor C425 connect power vd D_ PA_SV, other end ground connection, plays the role of combined filter.No. 9 pin VBA2 are second-order amplification bias voltages, to open the Second order amplifier.The one end resistance R278 connects power vd D_PA_SV, and the other end connects No. 9 pin VBA2, and resistance R278 plays limit Flow antihypertensive effect.No. 10 pin VBIAS are third rank amplification bias voltages, to open the whole rank amplifier of third rank.15, 16, No. 17 pin RFout3 are the whole rank radiofrequency signal output of third rank, one end phase after three pin series connection with inductance L17 Even, the other end of inductance L17 is connected with capacitor C452, capacitor C446, capacitor C447 respectively, capacitor C452, capacitor C446, capacitor The other end of C447 is grounded, and inductance and capacitor play the role of combined filter.No. 20 pin RFout2 are that second-order radiofrequency signal is defeated Out, external 5V voltage, No. 20 pin RFout2 are connected with inductance L15, capacitor C432, capacitor C448, one end capacitor C450 and outer It meets power vd D_PA_SV to be connected, other end ground connection, inductance, capacitor play the role of combined filter.No. 22 pin RFin2 are second The input of rank radiofrequency signal, pin RFin2 and capacitor C433, capacitor C434 are connected with each other, and capacitor C433, capacitor C434 are logical for radio frequency Road capacitor.No. 24 pin RFout1.

Circuit diagram between radio frequency plug J5 as shown in Figure 5 and low-noise amplifier, capacitor C397, capacitor C398 A pi-network is formed with capacitor C399, to do radio-frequency channel matching.The both ends capacitor C397G be separately connected capacitor C398 and Capacitor C399, capacitor C398 and capacitor C399 ground connection.The one end capacitor C333 ground connection, the other end are separately connected capacitor C399 and capacitor C330.By actual measurement, capacitor C398 and capacitor C399 need to only weld capacitor C397 without welding.

The circuit diagram of low-noise amplifier LNA as shown in FIG. 6, base stage pipe of the radio frequency receiving signal from triode Q2 Foot enters amplifier circuit in low noise, and the one end inductance L5 is connected with the base stage of triode Q2, and the other end is connected with capacitor C322, electricity Hold the other end ground connection of C322, the effect of inductance L5 and capacitor C322 are combined filters, and providing suitable bias voltage makes low noise Acoustic amplifier LNA is worked normally.The collector of triode Q2 is successively connected with one end of inductance L4 and resistance R222, capacitor C321 One end is connected between inductance L4 and resistance R222, and other end ground connection, the other end of capacitor R222 is connected to power vd D and capacitor Between C319, the other end of capacitor C319 is grounded, and power vd D is connected with one end of resistance R221, the other end of resistance R221 and Inductance L5 is connected.Amplified radiofrequency signal is sent into RF switch by the collector of low-noise amplifier LNA backward.Capacitor C319 Primary filtering is carried out, resistance R222 mainly undertakes metering function, and inductance L4 and capacitor C321 combine to form secondary filtering, provide conjunction Suitable operating voltage works normally low-noise amplifier LNA.

Radio-frequency switch circuit as shown in Figure 7, RF switch chip U14(model HWS486) pin V1 and pin V2 Effect is control switch switching direction, specific truth table are as follows:

The one end capacitor C337 is connected with RF switch chip U14, other end ground connection, the one end capacitor C338 and RF switch core Piece U14 is connected, and other end ground connection, capacitor C338 plays filter action, eliminates switching signal noise that may be present.RF switch The pin IN of chip U14 is connected with capacitor C298, is connected separately with capacitor C302 and capacitor C313 at the both ends of capacitor C298, electricity Hold C302 and capacitor is grounded respectively.The pin G of RF switch chip U14 is grounded.The GPIOH13 conduct of baseband chip BCM61755 Signal source is controlled, a single channel phase inverter U16(NOT gate SN74LVC1G04 is passed through) produce the signal TDD_RX_ of two-way reverse phase SW and FDD_RX_SW switches to control switch.Radiofrequency signal input: capacitor C298, capacitor C302, capacitor C313 form one Pi-network, to do radio-frequency channel matching, by actual measurement, capacitor C302 and capacitor C313 need to only weld capacitor without welding C298.

As shown in figure 8, TDD receives the circuit diagram that signal enters AD conversion chip AD9363, capacitor C324, capacitor C328, capacitor C329 form a pi-network, the both ends of capacitor C324 one end phase with capacitor C328 and capacitor C329 respectively Even, the other end ground connection of capacitor C328 and capacitor C329.The effect of pi-network is to do radio-frequency channel matching, by actual measurement, C328 With C329 without welding, C324 need to be only welded.

As shown in figure 9, FDD receives the circuit diagram that signal enters AD conversion chip AD9363, wrapped in circuit diagram Include multilayer Balun circuit chip T3(HHM17147A1), the pin UNBAL connection single-ended radio frequency letter of multilayer Balun circuit chip T3 Number, it is herein radio frequency receiving signal, is input to BALUN, capacitor C331, capacitor C334, capacitor C335 form a pi-network, Wherein the both ends of capacitor C331 are connected with capacitor C334 and capacitor C335 respectively, capacitor C334 and capacitor C335 ground connection, multilayer bar The GND pin of human relations circuit chip T3 is grounded, and the pin BAL2 of multilayer Balun circuit chip T3 is connected with capacitor C336, pin DC/ GND ground connection, pin BAL1 are connected with capacitor C339, pin BAL1 connection difference radio-frequency signal, the difference for herein exporting BALUN Radio frequency receiving signal is sent to AD conversion chip AD9363.The effect of pi-network is to do radio-frequency channel matching, by surveying, C334 and C3335 need to only weld C331 without welding.

Certainly, the utility model can also have other various embodiments, without departing substantially from the spirit of the present invention and its essence In the case where, those skilled in the art can make various corresponding changes and modifications, but this according to the utility model A little corresponding changes and modifications all should belong to the protection scope of the utility model the attached claims.

Claims (3)

1. a kind of small base station of Double-mode multifrequency power 4G LTE trade Special Network, which is characterized in that include in the circuit structure of small base station Transmission channel and receiving channel:

It include A/D conversion circuit, Balun circuit and radio frequency amplifier in transmission channel, the radio frequency amplifier passes through Balun Circuit is connected with A/D conversion circuit, and wherein the effect of Balun circuit is that the differential signal of A/D conversion circuit is conveyed to radio frequency Amplifier, the effect of the radio frequency amplifier are that the radiofrequency signal for generating A/D conversion circuit amplifies and passes through radio frequency mouth Launch；

It is described low including RF switch low-noise amplifier (LNA) and be connected with the low-noise amplifier in receiving channel The effect of noise amplifier is that the radiofrequency signal that will be received amplifies and be sent to RF switch, the RF switch Effect is will to receive the single-ended radio frequency signal come to switch to FDD receiving path or TDD receiving path on demand, in which: TDD is single-ended Radiofrequency signal enters A/D conversion circuit by capacitor, and FDD single-ended radio frequency signal is differential signal by Balun circuit conversion It is input to A/D conversion circuit.

2. the small base station of Double-mode multifrequency power 4G LTE trade Special Network according to claim 1, which is characterized in that in the small base It stands and is provided with plate interior power in plate.

3. the small base station of Double-mode multifrequency power 4G LTE trade Special Network according to claim 1, which is characterized in that the radio frequency is put It is connected by pi-network with attenuator circuit between big device and Balun circuit, between the pi-network and the attenuator circuit It is provided with radio-frequency channel capacitor.