CN209608558U - A kind of single-phase sine-wave inverter device - Google Patents

Abstract

The utility model discloses a kind of single-phase sine-wave inverter devices, including 12V power output end, booster circuit, inverter circuit, and control module, the inverter circuit output single-phase sine voltage, the control module includes microcontroller and driving circuit, the output of the inverter circuit is terminated with voltage detection module and current detection module, the output of the microcontroller is terminated with display screen, the driving circuit includes the first driving circuit, second driving circuit, third driving circuit and the 4th driving circuit, and first driving circuit, second driving circuit, third driving circuit and the 4th driving circuit include pushing away to exempt from circuit and pulse transformer isolated drive circuit.The utility model simple structure and reasonable design, realizes the fast conducting of switching tube, and avoids the setting of pulsed drive chip, moreover it is possible to detect the parameters such as working voltage, the electric current of inverter, guarantee the work of inverter normal table.

Description

A kind of single-phase sine-wave inverter device

Technical field

The utility model belongs to switch power technology field, and in particular to a kind of single-phase sine-wave inverter device.

Background technique

With the development of power electronics technology, inverter is very widely used, because of current battery, dry electricity Pond, solar battery and Switching Power Supply etc. are all DC power supplies, these power supplys cannot be used directly to power to AC load, because This, it is necessary to use inverter.DC power supply can be converted to required alternating current by inverter, therefore inverter exists The numerous areas such as aviation, circuit, railway traffic and communication are widely used.The power of existing inverter is lower, The conducting speed of switching tube is lower；In addition switching tube generally uses pulsed drive chip to export pwm pulse sequence driving switch pipe, It is not only at high cost, and increase the setting of pulsed drive chip.Therefore, nowadays lack a kind of simple structure and reasonable design Single-phase sine-wave inverter device, realizes the fast conducting of switching tube, and avoids the setting of pulsed drive chip, moreover it is possible to detect The parameters such as working voltage, the electric current of inverter guarantee the work of inverter normal table.

Utility model content

It is a kind of single-phase the technical problem to be solved by the utility model is in view of the deficiency of the prior art, provide Sine-wave inverter device, simple structure and reasonable design realizes the fast conducting of switching tube, and avoids pulsed drive core The setting of piece, moreover it is possible to detect the parameters such as working voltage, the electric current of inverter, guarantee the work of inverter normal table.

In order to solve the above technical problems, the technical solution adopted in the utility model is: a kind of single-phase sine-wave inverter Device, it is characterised in that: including sequentially connected 12V power supply, booster circuit, inverter circuit, and inverter circuit is controlled The control module of system, the inverter circuit output single-phase sine voltage to load, the control module include microcontroller and The output of the driving circuit to connect with microcontroller output, the inverter circuit is terminated with voltage detection module and current detecting The output end of module, the voltage detection module and current detection module connects with the input terminal of microcontroller, the micro-control The output of device processed is terminated with display screen, and the driving circuit includes the first driving circuit, the second driving circuit, third driving circuit With the 4th driving circuit, and first driving circuit, the second driving circuit, third driving circuit and the 4th driving circuit are wrapped It includes to push away and exempts from circuit and pulse transformer isolated drive circuit.

Above-mentioned a kind of single-phase sine-wave inverter device, it is characterised in that: the booster circuit includes chip The 2nd pin of LM5122, the chip LM5122 are grounded；The 3rd pin of the chip LM5122 divides two-way, passes through resistance all the way R2 connects 12V power output end, and another way connects with one end of inductance L1；It is defeated that the 4th pin of the chip LM5122 connects 12V power supply Outlet；The 5th pin of the chip LM5122 divides two-way, connects 12V power output end by resistance R3 all the way, and another way passes through electricity Hold C6 ground connection；The 6th pin of the chip LM5122 divides two-way, connects 12V power output end by resistance R5 all the way, passes through all the way Resistance R11 ground connection；The 7th pin of the chip LM5122 is grounded by capacitor C10；The 8th pin of the chip LM5122 is logical Cross resistance R12 ground connection；The 9th pin of the chip LM5122 is grounded；Four tunnels of the 10th pin of the chip LM5122 point, first Road connects with one end of capacitor C12, and the second tunnel connects with one end of capacitor C9, and third road is grounded by resistance R9, and the 4th tunnel is logical It crosses resistance R6 and connects 50V power output end；The 11st pin of the chip LM5122 divides two-way, all the way with the other end of capacitor C12 Connect, another way connects with one end of resistance R10；The other end of the resistance R10 connects with the other end of capacitor C9；The core The 12nd pin of piece LM5122 is grounded by resistance R13；The 14th pin of the chip LM5122 is grounded by capacitor C11；Institute State the 15th pin ground connection of chip LM5122；The 16th pin of the chip LM5122 connects with the grid of metal-oxide-semiconductor Q4；The core The 17th pin of piece LM5122 divides two-way, connects all the way with the anode of diode D1, another way is grounded by capacitor C7；The core Four tunnels of the 18th pin of piece LM5122 point, the first via connect with one end of capacitor C5, and the second tunnel connects with the other end of inductance L1, Third road connects with the source electrode of metal-oxide-semiconductor Q1, and the 4th tunnel connects with the drain electrode of metal-oxide-semiconductor Q4；The 19th pin of the chip LM5122 Connect with the grid of metal-oxide-semiconductor Q1；The 20th pin of the chip LM5122 divides two-way, connects all the way with the cathode of diode D1, Another way connects with the other end of capacitor C5；The drain electrode of the metal-oxide-semiconductor Q1 divides two-way, all the way through capacitor C2 and capacitor C1 in parallel Ground connection, another way are 50V power output end；The source electrode of the metal-oxide-semiconductor Q4 is grounded.

A kind of above-mentioned single-phase sine-wave inverter device, it is characterised in that: the inverter circuit include metal-oxide-semiconductor Q7, Three tunnels of the connecting pin of the drain electrode of the drain electrode and metal-oxide-semiconductor Q8 of metal-oxide-semiconductor Q8, metal-oxide-semiconductor Q10 and metal-oxide-semiconductor Q11, the metal-oxide-semiconductor Q7 point, one Road connects with one end of resistance R18, and another way is grounded through capacitor C18 in parallel, capacitor C7, capacitor C16 and capacitor C15, third Road connects with 50V power output end；Three tunnels of the source electrode of the metal-oxide-semiconductor Q7 point, connect with one end of resistance R19 all the way, another way Connect with the drain electrode of metal-oxide-semiconductor Q10, third road connects with one end of inductance L3；The source electrode of the metal-oxide-semiconductor Q8 point three tunnels, all the way with One end of resistance R20 connects, and another way connects with the drain electrode of metal-oxide-semiconductor Q11, and third road connects with one end of inductance L2；The MOS The source electrode of pipe Q10 divides two-way, connects all the way with one end of resistance R24, another way is grounded by resistance R28；The metal-oxide-semiconductor Q11 Source electrode divide two-way, connect all the way with one end of resistance R25, another way is grounded by resistance R29；The grid of the metal-oxide-semiconductor Q7 Connect with the connecting pin of the other end of resistance R19 with the output end of first driving circuit, the grid and electricity of the metal-oxide-semiconductor Q8 The connecting pin for hindering the other end of R20 connects with the output end of second driving circuit, the grid and resistance of the metal-oxide-semiconductor Q10 The connecting pin of the other end of R24 connects with the output end of the third driving circuit, the grid and resistance R25 of the metal-oxide-semiconductor Q11 The connecting pin of the other end connect with the output end of the 4th driving circuit, three tunnels of the other end point of the inductance L2, all the way Connect with one end of capacitor C20, another way connects with one end of capacitor C21, and third road is an output end of inverter circuit；Institute Three tunnels of the other end point for stating inductance L3, connect with the other end of capacitor C20 all the way, and another way connects with the other end of capacitor C21, Third road is the another output of inverter circuit.

Above-mentioned a kind of single-phase sine-wave inverter device, it is characterised in that: the voltage detection module includes voltage Sensor, the 1st pin of chip U1, the chip U1 of model OPA2350 and the connecting pin of the 2nd pin and resistance R30 mono- End connects, and four tunnels of the other end point of the resistance R30, the first via connects with the cathode of diode D16, the second tunnel and diode The cathode of D17 connects, and third road is grounded by capacitor C29, and the 4th tunnel connects with the ADCIN1 pin of microcontroller；Two pole The anode of pipe D16 connects 3.3V power output end, and the 3rd pin of the plus earth of the diode D17, the chip U1 is divided to two Road is connected by resistance R34 with 3.3V power output end all the way, and another way connects with one end of resistance R39；The chip U1's 4th pin ground connection；The 5th pin of the chip U1 is grounded by resistance R33；The 6th pin of the chip U1 divides two-way, all the way Connect with one end of resistance R31, another way connects with one end of resistance R36；The other end of the resistance R31 divides two-way, all the way It is grounded by resistance R60, another way connects with the output end of voltage sensor；The 7th pin of the chip U1 divides two-way, all the way Connect with the other end of resistance R36, another way connects with the other end of resistance R39；The 8th pin of the chip U1 divides two-way, All the way by capacitor C27 and capacitor C28 ground connection in parallel, another way connects 3.3V power output end, and the voltage sensor simultaneously connects In the output end of inverter circuit.

Above-mentioned a kind of single-phase sine-wave inverter device, it is characterised in that: the current detection module includes electric current The chip U2 of sensor and model OPA2350, the 1st pin of the chip U2 divide two-way, all the way with one end phase of resistance R52 It connects, another way connects with one end of resistance R46；The 2nd pin of the chip U2 divides two-way, all the way with the other end of resistance R52 Connect, another way connects with one end of resistance R50；The other end of the resistance R50 divides two-way, all the way with one end of resistance R44 Connect, another way connects an output end of current sensor；The 3rd pin of the chip U2 divides two-way, passes through resistance R47 all the way Ground connection, another way connect with one end of resistance R49；The other end of the resistance R49 divides two-way, another with resistance R44 all the way End connects, and connects the another output of current sensor all the way；The 4th pin of the chip U2 is grounded；The 5th of the chip U2 Pin divides two-way, connects 3.3V power output end by resistance R42 all the way, and another way connects with the other end of resistance R46；The core The 6th pin of piece U2 and the connecting pin of the 7th pin connect with one end of resistance R43, four tunnels of the other end point of the resistance R43, The first via connects with the cathode of diode D18, and the second tunnel connects with the cathode of diode D19, and third road is connect by capacitor C40 Ground, the 4th tunnel connect the ADCIN2 pin of microcontroller；The anode of the diode D18 connects 3.3V power output end, two pole 8th pin of the plus earth of pipe D19, the chip U2 divides two-way, is grounded all the way by capacitor C31 and capacitor C32 in parallel, Another way connects 3.3V power output end.

Above-mentioned a kind of single-phase sine-wave inverter device, it is characterised in that: first driving circuit includes first It pushes away and exempts from circuit and the first pulse transformer isolated drive circuit, described first pushes away that exempt from circuit include triode Q2 and triode Q3, The first pulse transformer isolated drive circuit includes pulse transformer T1, and the collector of the triode Q2 connects 12V power supply The base stage of output end, the triode Q2 connects with one end of resistance R1, and the emitter of the triode Q2 divides two-way, all the way with The emitter of triode Q3 connects, and another way connects with one end of capacitor C3；The base stage of the triode Q3 and the one of resistance R7 End connects, and the other end of the resistance R1 is connect with the port I/O of the connecting pin of the other end of resistance R7 and microcontroller, described One end of the primary side of pulse transformer T1 connects with the other end of capacitor C3, the other end of the primary side of the pulse transformer T1 and The collector of triode Q3 is grounded, and the one end on the secondary side of the pulse transformer T1 connects with one end of capacitor C4, the electricity The other end for holding C4 divides two-way, connects all the way with the cathode of diode D3, another way connects with one end of resistance R4；The resistance The other end of R4 point three tunnels, connect with one end of resistance R8 all the way, and another way connects with the cathode of voltage-stabiliser tube D2, third road and The grid of metal-oxide-semiconductor Q7 connects；Four tunnels of the other end on the secondary side of the pulse transformer T1 point, the anode of the first via and diode D3 Connect, the second tunnel connects with the other end of resistance R8, and third road connects with the anode of voltage-stabiliser tube D2, and the 4th tunnel is with metal-oxide-semiconductor Q7's Source electrode connects.

Above-mentioned a kind of single-phase sine-wave inverter device, it is characterised in that: second driving circuit includes second It pushes away and exempts from circuit and the second pulse transformer isolated drive circuit, described second pushes away that exempt from circuit include triode Q5 and triode Q6, The second pulse transformer isolated drive circuit includes pulse transformer T2, and the collector of the triode Q5 connects 12V power supply The base stage of output end, the triode Q5 connects with one end of resistance R14, and the emitter of the triode Q5 divides two-way, all the way Connect with the emitter of triode Q6, another way connects with one end of capacitor C13；The base stage and resistance R16 of the triode Q6 One end connect, the port I/O of the connecting pin of the other end of the other end and resistance R16 of the resistance R14 and microcontroller connects It connects, one end of the primary side of the pulse transformer T2 connects with the other end of capacitor C13, the primary side of the pulse transformer T2 The collector of the other end and triode Q6 are grounded, the one end on the secondary side of the pulse transformer T2 and one end phase of capacitor C14 It connecing, the other end of the capacitor C14 divides two-way, connects all the way with the cathode of diode D5, one end phase of another way and resistance R15 It connects；Three tunnels of the other end of the resistance R15 point, connect with one end of resistance R17 all the way, the cathode phase of another way and voltage-stabiliser tube D4 It connects, third road connects with the grid of metal-oxide-semiconductor Q8；Four tunnels of the other end on the secondary side of the pulse transformer T2 point, the first via and two The anode of pole pipe D5 connects, and the second tunnel connects with the other end of resistance R17, and third road connects with the anode of voltage-stabiliser tube D4, and the 4th Road connects with the source electrode of metal-oxide-semiconductor Q8.

Above-mentioned a kind of single-phase sine-wave inverter device, it is characterised in that: the third driving circuit includes third It pushing away and exempts from circuit and third pulse transformer isolated drive circuit, the third pushes away that exempt from circuit include triode Q9 and triode Q12, The third pulse transformer isolated drive circuit includes pulse transformer T3, and the collector of the triode Q9 connects 12V power supply The base stage of output end, the triode Q9 connects with one end of resistance R22, and the emitter of the triode Q9 divides two-way, all the way Connect with the emitter of triode Q12, another way connects with one end of capacitor C22；The base stage and resistance of the triode Q12 One end of R26 connects, the connecting pin of the other end of the other end and resistance R26 of the resistance R22 and the port I/O of microcontroller Connection, one end of the primary side of the pulse transformer T3 connect with the other end of capacitor C22, the primary side of the pulse transformer T3 The other end and the collector of triode Q12 be grounded, the one end on the secondary side of the pulse transformer T3 and one end of capacitor C23 Connecting, the other end of the capacitor C23 divides two-way, connects all the way with the cathode of diode D7, one end of another way and resistance R23 Connect；Three tunnels of the other end of the resistance R23 point, connect with one end of resistance R27 all the way, the cathode of another way and voltage-stabiliser tube D6 Connect, third road connects with the grid of metal-oxide-semiconductor Q10；The other end on the secondary side of the pulse transformer T3 point four tunnels, the first via with The anode of diode D7 connects, and the second tunnel connects with the other end of resistance R27, and third road connects with the anode of voltage-stabiliser tube D6, the Four tunnels connect with the source electrode of metal-oxide-semiconductor Q10.

Above-mentioned a kind of single-phase sine-wave inverter device, it is characterised in that: the 4th driving circuit includes the 4th It pushes away and exempts from circuit and the 4th pulse transformer isolated drive circuit, the described 4th pushes away that exempt from circuit include triode Q13 and triode Q14, the 4th pulse transformer isolated drive circuit includes pulse transformer T4, and the collector of the triode Q13 meets 12V The base stage of power output end, the triode Q13 connects with one end of resistance R32, and the emitter of the triode Q13 is divided to two Road connects with the emitter of triode Q14 all the way, and another way connects with one end of capacitor C24；The base stage of the triode Q14 Connect with one end of resistance R37, the connecting pin of the other end of the other end and resistance R37 of the resistance R32 and microcontroller The connection of the port I/O, one end of the primary side of the pulse transformer T4 connect with the other end of capacitor C24, the pulse transformer The other end of the primary side of T4 and the collector of triode Q14 are grounded, the one end on the secondary side of the pulse transformer T4 and capacitor One end of C25 connects, and the other end of the capacitor C25 divides two-way, connects all the way with the cathode of diode D9, another way and resistance One end of R35 connects；Three tunnels of the other end of the resistance R35 point, connect with one end of resistance R38 all the way, another way and pressure stabilizing The cathode of pipe D8 connects, and third road connects with the grid of metal-oxide-semiconductor Q11；The other end on the secondary side of the pulse transformer T4 point four Road, the first via connect with the anode of diode D9, and the second tunnel connects with the other end of resistance R38, and third road is with voltage-stabiliser tube D8's Anode connects, and the 4th tunnel connects with the source electrode of metal-oxide-semiconductor Q11.

Compared with the prior art, the utility model has the following advantages:

1, the utility model simple structure and reasonable design, it is at low cost and small in size.

2, the first driving circuit of the utility model, the second driving circuit, third driving circuit and the 4th driving circuit wrap It includes to push away and exempts from circuit and pulse transformer isolated drive circuit, be on the one hand that exempt from circuit structure simple because pushing away, when work, two right The triode of title only one conducting every time, so conduction loss is small；On the other hand, made using the amplification current capacity of triode Driving signal has bigger driving capability；It using pulse transformer isolation drive, is put because playing triggering power Big effect further increases the driving capability of driving signal, so that driving pulse has enough raising and lowering speed, Improve conducting and the turn-off speed of metal-oxide-semiconductor；On the other hand, play the role of that high pressure is isolated, the high pressure for avoiding metal-oxide-semiconductor from loading is made It is damaged at microcontroller.

3, the utility model exports low and high level by microcontroller and controls the first driving circuit, the second driving circuit, the Three driving circuits and the 4th driving circuit output pwm pulse sequence drive metal-oxide-semiconductor, reduce the setting of pulsed drive chip, together When voltage detection module and the collected signal of current detection module can be judged again, reduce it is at low cost.

4, the utility model be arranged voltage detection module, be in order to inverter circuit to load voltage detect, and The voltage that will test is sent to microcontroller, and the voltage that microcontroller receives is compared with voltage security value, works as micro-control When the voltage that device processed receives meets voltage security value, the normal output single-phase sine voltage signal of inverter circuit；Work as microcontroller When the voltage that device receives does not meet electric current safety value, microcontroller controls inverter circuit by driving circuit and turns off, and stops defeated Single-phase sine voltage signal out, the voltage for avoiding inverter circuit from exporting flow through load device and are in over-voltage and are burned.

5, the utility model be arranged current detection module, be in order to inverter circuit to load electric current detect, and The electric current that will test is sent to microcontroller, and the electric current that microcontroller receives is compared with electric current safety value, works as micro-control When the electric current that device processed receives meets electric current safety value, the normal output single-phase sine voltage signal of inverter circuit；Work as microcontroller When the electric current that device receives does not meet electric current safety value, microcontroller controls inverter circuit by driving circuit and turns off, and stops defeated Single-phase sine voltage signal out avoids the electric current for flowing through load device excessive and is burned.

In conclusion the utility model simple structure and reasonable design, realizes the fast conducting of switching tube, and avoid pulse The setting of driving chip, moreover it is possible to detect the parameters such as working voltage, the electric current of inverter, guarantee inverter normal table work Make.

Below through drawings and examples, the technical solution of the utility model is described in further detail.

Detailed description of the invention

Fig. 1 is the schematic block circuit diagram of the utility model.

Fig. 2 is the circuit diagram of the utility model booster circuit.

Fig. 3 is the circuit diagram of the utility model inverter circuit.

Fig. 4 is the circuit diagram of the utility model voltage detection module.

Fig. 5 is the circuit diagram of the utility model current detection module.

Fig. 6 is the circuit diagram of the first driving circuit of the utility model.

Fig. 7 is the circuit diagram of the second driving circuit of the utility model.

Fig. 8 is the circuit diagram of the utility model third driving circuit.

Fig. 9 is the circuit diagram of the 4th driving circuit of the utility model.

Description of symbols:

1-12V 2-booster circuit of power output end；3-inverter circuits；

4-loads；5-microcontrollers；6-display screens；

7-driving circuits；8-voltage detection modules；9-current detection modules.

Specific embodiment

As shown in Figure 1, the utility model includes sequentially connected 12V power supply 1, booster circuit 2, inverter circuit 3 and right The control module that inverter circuit 3 is controlled, the 3 output single-phase sine voltage of inverter circuit is to load 4, the control mould Block includes microcontroller 5 and the driving circuit 7 that connects with 5 output end of microcontroller, and the output of the inverter circuit 3 is terminated with electricity Press detection module 8 and current detection module 9, the output end of the voltage detection module 8 and current detection module 9 is and microcontroller The input terminal of device 5 connects, and the output of the microcontroller 5 is terminated with display screen 6, and the driving circuit 7 includes the first driving electricity Road, the second driving circuit, third driving circuit and the 4th driving circuit, and first driving circuit, the second driving circuit, Three driving circuits and the 4th driving circuit include pushing away to exempt from circuit and pulse transformer isolated drive circuit.

As shown in Fig. 2, in the present embodiment, the booster circuit 2 includes chip LM5122, the 2nd of the chip LM5122 the Pin ground connection；The 3rd pin of the chip LM5122 divides two-way, connects 12V power output end by resistance R2 all the way, another way with One end of inductance L1 connects；The 4th pin of the chip LM5122 connects 12V power output end；Draw the 5th of the chip LM5122 Foot divides two-way, connects 12V power output end by resistance R3 all the way, and another way is grounded by capacitor C6；The chip LM5122's 6th pin divides two-way, connects 12V power output end by resistance R5 all the way, is grounded all the way by resistance R11；The chip The 7th pin of LM5122 is grounded by capacitor C10；The 8th pin of the chip LM5122 is grounded by resistance R12；The core The 9th pin of piece LM5122 is grounded；Four tunnels of the 10th pin of the chip LM5122 point, one end phase of the first via and capacitor C12 It connects, the second tunnel connects with one end of capacitor C9, and third road is grounded by resistance R9, and it is defeated that the 4th tunnel by resistance R6 connects 50V power supply Outlet；The 11st pin of the chip LM5122 divides two-way, connects all the way with the other end of capacitor C12, another way and resistance R10 One end connect；The other end of the resistance R10 connects with the other end of capacitor C9；The 12nd pin of the chip LM5122 is logical Cross resistance R13 ground connection；The 14th pin of the chip LM5122 is grounded by capacitor C11；Draw the 15th of the chip LM5122 Foot ground connection；The 16th pin of the chip LM5122 connects with the grid of metal-oxide-semiconductor Q4；The 17th pin of the chip LM5122 point Two-way connects with the anode of diode D1 all the way, and another way is grounded by capacitor C7；The 18th pin of the chip LM5122 point Four tunnels, the first via connect with one end of capacitor C5, and the second tunnel connects with the other end of inductance L1, the source on third road and metal-oxide-semiconductor Q1 Pole connects, and the 4th tunnel connects with the drain electrode of metal-oxide-semiconductor Q4；The 19th pin of the chip LM5122 connects with the grid of metal-oxide-semiconductor Q1； The 20th pin of the chip LM5122 divides two-way, connects all the way with the cathode of diode D1, and another way is another with capacitor C5's End connects；The drain electrode of the metal-oxide-semiconductor Q1 divides two-way, is grounded all the way through capacitor C2 and capacitor C1 in parallel, and another way is 50V power supply Output end；The source electrode of the metal-oxide-semiconductor Q4 is grounded.

As shown in figure 3, the inverter circuit 3 includes metal-oxide-semiconductor Q7, metal-oxide-semiconductor Q8, metal-oxide-semiconductor Q10 and metal-oxide-semiconductor in the present embodiment Three tunnels of the connecting pin of the drain electrode of the drain electrode and metal-oxide-semiconductor Q8 of Q11, the metal-oxide-semiconductor Q7 point, connect with one end of resistance R18, separately all the way It is grounded all the way through capacitor C18 in parallel, capacitor C7, capacitor C16 and capacitor C15, third road connects with 50V power output end；Institute Three tunnels of source electrode point for stating metal-oxide-semiconductor Q7, connect with one end of resistance R19, another way connects with the drain electrode of metal-oxide-semiconductor Q10, third all the way Road connects with one end of inductance L3；The source electrode of the metal-oxide-semiconductor Q8 point three tunnels, connect with one end of resistance R20 all the way, another way with The drain electrode of metal-oxide-semiconductor Q11 connects, and third road connects with one end of inductance L2；The source electrode of the metal-oxide-semiconductor Q10 divides two-way, all the way with electricity One end of resistance R24 connects, and another way is grounded by resistance R28；The source electrode of the metal-oxide-semiconductor Q11 divides two-way, all the way with resistance R25 One end connect, another way is grounded by resistance R29；The connecting pin of the other end of the grid and resistance R19 of the metal-oxide-semiconductor Q7 with The output end of first driving circuit connects, the connecting pin of the grid of the metal-oxide-semiconductor Q8 and the other end of resistance R20 with it is described The output end of second driving circuit connects, the connecting pin of the other end of the grid and resistance R24 of the metal-oxide-semiconductor Q10 and described the The output end of three driving circuits connects, the connecting pin and the described 4th of the other end of the grid and resistance R25 of the metal-oxide-semiconductor Q11 The output end of driving circuit connects, and three tunnels of the other end point of the inductance L2 connect with one end of capacitor C20 all the way, another way Connect with one end of capacitor C21, third road is an output end of inverter circuit 3；Three tunnels of the other end of the inductance L3 point, one Road connects with the other end of capacitor C20, and another way connects with the other end of capacitor C21, and third road is another of inverter circuit 3 Output end.

As shown in figure 4, the voltage detection module 8 includes voltage sensor, model OPA2350 in the present embodiment Chip U1, the 1st pin of the chip U1 and the connecting pin of the 2nd pin connect with the one end resistance R30, and the resistance R30's is another Four tunnels of one end point, the first via connect with the cathode of diode D16, and the second tunnel connects with the cathode of diode D17, and third road passes through Capacitor C29 ground connection, the 4th tunnel connects with the ADCIN1 pin of microcontroller 5；It is defeated that the anode of the diode D16 connects 3.3V power supply 3rd pin of outlet, the plus earth of the diode D17, the chip U1 divides two-way, passes through resistance R34 and 3.3V all the way Power output end connects, and another way connects with one end of resistance R39；The 4th pin of the chip U1 is grounded；The chip U1's 5th pin is grounded by resistance R33；The 6th pin of the chip U1 divides two-way, connects all the way with one end of resistance R31, another Road connects with one end of resistance R36；The other end of the resistance R31 divides two-way, is grounded all the way by resistance R60, another way with The output end of voltage sensor connects；The 7th pin of the chip U1 divides two-way, connects all the way with the other end of resistance R36, separately Connect all the way with the other end of resistance R39；The 8th pin of the chip U1 divides two-way, all the way by capacitor C27 and electricity in parallel Hold C28 ground connection, another way connects 3.3V power output end, and the voltage sensor is attempted by the output end of inverter circuit 3.

As shown in figure 5, the current detection module 9 includes current sensor and model OPA2350 in the present embodiment Chip U2, the 1st pin of the chip U2 divide two-way, connect all the way with one end of resistance R52, and the one of another way and resistance R46 End connects；The 2nd pin of the chip U2 divides two-way, connects all the way with the other end of resistance R52, and another way is with resistance R50's One end connects；The other end of the resistance R50 divides two-way, connects all the way with one end of resistance R44, another way connects current sensor An output end；The 3rd pin of the chip U2 divides two-way, is grounded all the way by resistance R47, and another way is with resistance R49's One end connects；The other end of the resistance R49 divides two-way, connects all the way with the other end of resistance R44, connects current sensor all the way Another output；The 4th pin of the chip U2 is grounded；The 5th pin of the chip U2 divides two-way, passes through resistance all the way R42 connects 3.3V power output end, and another way connects with the other end of resistance R46；The 6th pin and the 7th pin of the chip U2 Connecting pin connect with one end of resistance R43, four tunnels of the other end of the resistance R43 point, the cathode of the first via and diode D18 Connect, the second tunnel connects with the cathode of diode D19, and third road is grounded by capacitor C40, and the 4th tunnel connects microcontroller 5 ADCIN2 pin；The anode of the diode D18 connects 3.3V power output end, the plus earth of the diode D19, the core The 8th pin of piece U2 divides two-way, and all the way by capacitor C31 and capacitor C32 ground connection in parallel, another way connects the output of 3.3V power supply End.

As shown in fig. 6, first driving circuit is pushed away including first exempts from circuit and the first pulse transformer in the present embodiment Isolated drive circuit, described first pushes away that exempt from circuit include triode Q2 and triode Q3, and the first pulse transformer isolation is driven Dynamic circuit includes pulse transformer T1, and the collector of the triode Q2 connects 12V power output end, the base stage of the triode Q2 Connect with one end of resistance R1, the emitter of the triode Q2 divides two-way, connects all the way with the emitter of triode Q3, another Road connects with one end of capacitor C3；The base stage of the triode Q3 connects with one end of resistance R7, the other end of the resistance R1 It is connect with the connecting pin of the other end of resistance R7 with the port I/O of microcontroller 5, one end of the primary side of the pulse transformer T1 Connecting with the other end of capacitor C3, the other end of the primary side of the pulse transformer T1 and the collector of triode Q3 are grounded, The one end on the secondary side of the pulse transformer T1 connects with one end of capacitor C4, and the other end of the capacitor C4 divides two-way, all the way Connect with the cathode of diode D3, another way connects with one end of resistance R4；The other end of the resistance R4 point three tunnels, all the way with One end of resistance R8 connects, and another way connects with the cathode of voltage-stabiliser tube D2, and third road connects with the grid of metal-oxide-semiconductor Q7；The arteries and veins Four tunnels of the other end point on the secondary side of transformer T1 are rushed, the first via connects with the anode of diode D3, and the second tunnel is another with resistance R8's One end connects, and third road connects with the anode of voltage-stabiliser tube D2, and the 4th tunnel connects with the source electrode of metal-oxide-semiconductor Q7.

As shown in fig. 7, second driving circuit is pushed away including second exempts from circuit and the second pulse transformer in the present embodiment Isolated drive circuit, described second pushes away that exempt from circuit include triode Q5 and triode Q6, and the second pulse transformer isolation is driven Dynamic circuit includes pulse transformer T2, and the collector of the triode Q5 connects 12V power output end, the base stage of the triode Q5 Connect with one end of resistance R14, the emitter of the triode Q5 divides two-way, connects all the way with the emitter of triode Q6, separately Connect all the way with one end of capacitor C13；The base stage of the triode Q6 connects with one end of resistance R16, and the resistance R14's is another One end is connect with the connecting pin of the other end of resistance R16 with the port I/O of microcontroller 5, the primary side of the pulse transformer T2 One end connect with the other end of capacitor C13, the other end of the primary side of the pulse transformer T2 and the collector of triode Q6 It is grounded, the one end on the secondary side of the pulse transformer T2 connects with one end of capacitor C14, the other end point of the capacitor C14 Two-way connects with the cathode of diode D5 all the way, and another way connects with one end of resistance R15；The other end of the resistance R15 point Three tunnels connect with one end of resistance R17 all the way, and another way connects with the cathode of voltage-stabiliser tube D4, the grid on third road and metal-oxide-semiconductor Q8 Connect；The other end on the secondary side of the pulse transformer T2 point four tunnels, the first via connect with the anode of diode D5, the second tunnel and The other end of resistance R17 connects, and third road connects with the anode of voltage-stabiliser tube D4, and the 4th tunnel connects with the source electrode of metal-oxide-semiconductor Q8.

As shown in figure 8, in the present embodiment, the third driving circuit includes that third pushes away and exempts from circuit and third pulse transformer Isolated drive circuit, the third push away that exempt from circuit include triode Q9 and triode Q12, and the third pulse transformer isolation is driven Dynamic circuit includes pulse transformer T3, and the collector of the triode Q9 connects 12V power output end, the base stage of the triode Q9 Connect with one end of resistance R22, the emitter of the triode Q9 divides two-way, connects all the way with the emitter of triode Q12, separately Connect all the way with one end of capacitor C22；The base stage of the triode Q12 connects with one end of resistance R26, the resistance R22's The other end is connect with the connecting pin of the other end of resistance R26 with the port I/O of microcontroller 5, the original of the pulse transformer T3 The one end on side connects with the other end of capacitor C22, the other end of the primary side of the pulse transformer T3 and the current collection of triode Q12 It is extremely grounded, the one end on the secondary side of the pulse transformer T3 connects with one end of capacitor C23, the other end of the capacitor C23 Divide two-way, connects all the way with the cathode of diode D7, another way connects with one end of resistance R23；The other end of the resistance R23 Divide three tunnels, connect all the way with one end of resistance R27, another way connects with the cathode of voltage-stabiliser tube D6, and third road is with metal-oxide-semiconductor Q10's Grid connects；Four tunnels of the other end on the secondary side of the pulse transformer T3 point, the first via connect with the anode of diode D7, and second Road connects with the other end of resistance R27, and third road connects with the anode of voltage-stabiliser tube D6, the source electrode phase on the 4th tunnel and metal-oxide-semiconductor Q10 It connects.

As shown in figure 9, the 4th driving circuit is pushed away including the 4th exempts from circuit and the 4th pulse transformer in the present embodiment Isolated drive circuit, the described 4th pushes away that exempt from circuit include triode Q13 and triode Q14, the 4th pulse transformer isolation Driving circuit includes pulse transformer T4, and the collector of the triode Q13 connects 12V power output end, the triode Q13's Base stage connects with one end of resistance R32, and the emitter of the triode Q13 divides two-way, all the way with the emitter phase of triode Q14 It connects, another way connects with one end of capacitor C24；The base stage of the triode Q14 connects with one end of resistance R37, the resistance The other end of R32 is connect with the connecting pin of the other end of resistance R37 with the port I/O of microcontroller 5, the pulse transformer T4 One end of primary side connect with the other end of capacitor C24, the other end of the primary side of the pulse transformer T4 and triode Q14's Collector is grounded, and the one end on the secondary side of the pulse transformer T4 connects with one end of capacitor C25, and the capacitor C25's is another Two-way is divided in one end, connects all the way with the cathode of diode D9, and another way connects with one end of resistance R35；The resistance R35's is another Three tunnels of one end point, connect with one end of resistance R38, another way connects with the cathode of voltage-stabiliser tube D8, third road and metal-oxide-semiconductor all the way The grid of Q11 connects；Four tunnels of the other end on the secondary side of the pulse transformer T4 point, the anode phase of the first via and diode D9 It connects, the second tunnel connects with the other end of resistance R38, and third road connects with the anode of voltage-stabiliser tube D8, and the 4th tunnel is with metal-oxide-semiconductor Q11's Source electrode connects.

In the present embodiment, microcontroller 10 is STC12C5A60S2 microcontroller, and data/address bus and address bus separate, micro- The speed of processor greatly improves.In addition also allow to be transmitted between the program space and data space, increase device Flexibility, DSP has stronger operational capability, faster speed, and powerful data-handling capacity and the high speed of service are just It is that this subject is required.And the integrated A/D module of STC12C5A60S2 microcontroller, to realize to current signal and voltage The detection of electric current and voltage is realized in the conversion of signal；In addition the multiple I/O ports of STC12C5A60S2 microcontroller are consequently facilitating aobvious The connection of display screen 6 and driving circuit 7.

In the present embodiment, when specific connection, the connecting pin of the other end of the resistance R1 and the other end of resistance R7 with it is micro- The port P0.1 of controller 5 connects, the connecting pin of the other end of the other end and resistance R16 of the resistance R14 and microcontroller 5 The connection of the port P0.2, the P0.3 of the connecting pin of the other end of the other end and resistance R26 of the resistance R22 and microcontroller 5 Port connection, the connecting pin of the other end of the other end and resistance R37 of the resistance R32 and the port P0.4 of microcontroller 5 connect It connects.

In the present embodiment, specifically when connection, four tunnels of the other end point of the resistance R30, the yin of the first via and diode D16 Pole connects, and the second tunnel connects with the cathode of diode D17, and third road is grounded by capacitor C29, the 4th tunnel and microcontroller 5 P1.0 pin connects；

Four tunnels of the other end of the resistance R43 point, the first via connect with the cathode of diode D18, the second tunnel and diode The cathode of D19 connects, and third road is grounded by capacitor C40, and the P1.1 pin that the 4th tunnel connects microcontroller 5 connects.

In the present embodiment, booster circuit 2 use Boost, circuit topology is simple, power-efficient may be up to 90% with On, input current is few to power supply disturbance；It is a kind of efficient synchronous liter that booster circuit 2, which uses chip LM5122, chip LM5122, Voltage-stablizer is pressed, is controlled based on peak-current mode, peak-current mode control provides the electricity of intrinsic route feedforward, circulation Ductility limit system and it is easy to loop compensation.Programmable switching frequency is up to 1MHz, passes through two support adaptive dead-time controls Steady durable type metal-oxide-semiconductor Q4 and the gate drivers of metal-oxide-semiconductor Q1 realize higher efficiency.It is switched by metal-oxide-semiconductor Q4 and metal-oxide-semiconductor Q1 Control, realize charge and discharge to inductance L1, increase voltage after inductance L1 energy storage, and capacitor C1 and capacitor C2 can be by output Voltage remains unchanged, and the 12V DC voltage of input is finally converted to 50V direct voltage output and is sent to inverter circuit 3.

In the present embodiment, be arranged inverter circuit 3, the full bridge inverter being made of 4 metal-oxide-semiconductors, be in order to boost after 50V DC signal input inversion topological in, the output of AC signal is realized with cut-off by the conducting of 4 metal-oxide-semiconductors of control, And the conducting of 4 metal-oxide-semiconductors is metal-oxide-semiconductor Q7 and metal-oxide-semiconductor Q11 conducting and metal-oxide-semiconductor Q8 and metal-oxide-semiconductor Q10 conducting, control PWM output And then changing the duty ratio of output voltage, the signal of output is loaded by capacitive capacitor C20 and capacitor C21, obtains the sine of 36V Wave.

In the present embodiment, carried out in voltage detection module 8 and current detection module 9 using the amplifier of model OPA2350 Signal amplification and conditioning are because the direct current input impedance of A/D module input is not very big, simulation in microcontroller 5 Signal will be sampled by guaranteeing that enough driving capabilities can be just sent in A/D module after Hyblid Buffer Amplifier and necessary conditioning And conversion.For the possible resolution ratio for reaching ADC, amplifier used in voltage detection module 8 and current detection module 9 need have Sufficiently fast speed, very high input impedance and low output impedance, to meet the level demand of ADC input signal.

In the present embodiment, the voltage sensor is CHV-50P voltage sensor, and resistance R60 is arranged, and is in order to by voltage Current output sensor signal is converted to voltage signal.

In the present embodiment, specifically when connection, one end+HT and inverter circuit 3 of the primary side of the CHV-50P voltage sensor An output end connect, another of the other end-HT of the primary side of the CHV-50P voltage sensor and inverter circuit 3 are defeated Outlet connects, and the output end M on the secondary side of the CHV-50P voltage sensor connects with the other end of resistance R31.

In the present embodiment, resistance R31 and resistance R36 is set, is the amplification in order to guarantee integrated transporting discharging；Resistance R33 is set, Be in order to as compensation resistance, to guarantee the symmetry of integrated transporting discharging input stage amplifying circuit；Be arranged resistance R34, resistance R39 and 3.3V voltage source forms voltage offset circuits, is because during detecting signal is AC signal, and through overvoltage sensor The signal obtained is also AC signal, and the A/D module incoming level of microcontroller 5 requires to be 0~3.3V, it is therefore desirable to be carried out Variation；In addition, diode D16 and diode D17 be guarantee for clamper clipping the amplitude of sampled voltage signal 0~ 3.3V meets the input request signal of microcontroller 5.

In the present embodiment, the current sensor is HCS-ES5-50A current sensor, and setting resistance R44 is as in parallel Resistance is in order to which current sensor output current signal is converted to voltage signal.

In the present embodiment, specifically when connection, an output end of inverter circuit 3 is passed through into HCS-ES5-50A current sense The OUT pin of the center mistake of device, HCS-ES5-50A current sensor connects with one end of resistance R44, HCS-ES5-50A electric current The GND pin of sensor connects with the other end of resistance R44.

In the present embodiment, setting resistance R47, resistance R49, resistance R50 and resistance R52, are to guarantee integrated transporting discharging Amplification；Resistance R42, resistance R46 and 3.3V voltage source composition voltage offset circuits are set, are because believing in detection signal for exchange During number, and the signal obtained after over-current sensor and resistance R44 is also AC signal, and the A/D mould of microcontroller 5 Block incoming level requires to be 0~3.3V, it is therefore desirable to carry out variation；In addition, diode D18 and diode D19 be in order to Clamper clipping guarantees that electric current is converted to the amplitude of voltage sampling signal in 0~3.3V, and the input signal for meeting microcontroller 5 is wanted It asks.

In the present embodiment, setting resistance R1 and resistance R7 is metering function, plays protection triode Q2's and triode Q3 Effect；Setting capacitor C3 is capacitance degaussing；The effect that triode Q2 and triode Q3 is arranged is comparable to conducting switch Effect, while the power of 12V is loaded, amplify the effect of trigger signal.Setting resistance R4, capacitor C4 and diode D3 be for Restore the waveform of the primary side driving signal of pulse transformer T1, and realize isolation, and in actual use, passes through adjusting R4 Size, the driving capability of adjustable isolation drive signal；The setting of resistance R8 and voltage-stabiliser tube D2 are to protect metal-oxide-semiconductor Q7 is against damages, after resistance R8 is arranged, can avoid working not yet in driving circuit, because of metal-oxide-semiconductor Q7 when metal-oxide-semiconductor Q7 has been powered on DG capacitor and GS capacitor caused by metal-oxide-semiconductor Q7 misleading and damaging accordingly, during actual use the resistance of resistance R8 Value is chosen as 5K~50K；In addition, setting voltage-stabiliser tube D2 is for ensuring that the GS voltage of metal-oxide-semiconductor Q7 under various dynamics does not exceed Its defined maximum value is damaged to avoid the door source of metal-oxide-semiconductor Q7.

In the present embodiment, setting resistance R14 and resistance R16 is metering function, plays protection triode Q5 and triode Q6 Effect；Setting capacitor C13 is capacitance degaussing；The effect that triode Q5 and triode Q6 is arranged is comparable to conducting switch Effect, while loading the power of 12V, amplify the effect of trigger signal.Resistance R15, capacitor C14 and diode D5 are set It is the waveform in order to restore the primary side driving signal of pulse transformer T2, and realizes isolation, and in actual use, passes through tune Save the size of R15, the driving capability of adjustable isolation drive signal；The setting of resistance R17 and voltage-stabiliser tube D4 are to protect Metal-oxide-semiconductor Q8 is against damages, be arranged resistance R17 after, can avoid driving circuit not yet work, when metal-oxide-semiconductor Q8 has been powered on because Metal-oxide-semiconductor Q8's caused by the DG capacitor and GS capacitor of metal-oxide-semiconductor Q8 misleading and damaging accordingly, during actual use resistance The resistance value of R17 is chosen as 5K~50K；In addition, setting voltage-stabiliser tube D4 is for ensuring that the GS voltage of metal-oxide-semiconductor Q8 under various dynamics not It can be more than its defined maximum value, be damaged to avoid the door source of metal-oxide-semiconductor Q8.

In the present embodiment, setting resistance R26 and resistance R22 is metering function, plays protection triode Q9 and triode Q12 Effect；Setting capacitor C22 is capacitance degaussing；The effect that triode Q9 and triode 12 is arranged is comparable to conducting switch Effect, while loading the power of 12V, amplify the effect of trigger signal.Resistance R23, capacitor C23 and diode D7 are set It is the waveform in order to restore the primary side driving signal of pulse transformer T2, and realizes isolation, and in actual use, passes through tune Save the size of R23, the driving capability of adjustable isolation drive signal；The setting of resistance R27 and voltage-stabiliser tube D6 are to protect Metal-oxide-semiconductor Q10 is against damages, after resistance R27 is arranged, can avoid working not yet in driving circuit, when metal-oxide-semiconductor Q10 has been powered on Because metal-oxide-semiconductor Q10 DG capacitor and GS capacitor caused by metal-oxide-semiconductor Q10 misleading and damaging accordingly, during actual use The resistance value of resistance R27 is chosen as 5K~50K；In addition, setting voltage-stabiliser tube D6 is for ensuring that the GS of metal-oxide-semiconductor Q10 under various dynamics Voltage does not exceed its defined maximum value, damages to avoid the door source of metal-oxide-semiconductor Q10.

In the present embodiment, setting resistance R32 and resistance R37 is metering function, plays protection triode Q13 and triode The effect of Q14；Setting capacitor C24 is capacitance degaussing；The effect that triode Q13 and triode Q14 is arranged is comparable to lead The effect of pass is opened up, while loading the power of 12V, amplifies the effect of trigger signal.Resistance R35, capacitor C25 and two are set Pole pipe D9 is the waveform in order to restore the primary side driving signal of pulse transformer T3, and realizes isolation, and in actual use, By adjusting the size of R35, the driving capability of adjustable isolation drive signal；The setting of resistance R38 and voltage-stabiliser tube D8, be for Protection metal-oxide-semiconductor Q11 is against damages, after resistance R38 is arranged, can avoid working not yet in driving circuit, metal-oxide-semiconductor Q11 is Misleading and damaging accordingly because of the metal-oxide-semiconductor Q11 caused by the DG capacitor of metal-oxide-semiconductor Q11 and GS capacitor when power-up, actually uses The resistance value of resistance R38 is chosen as 5K~50K in the process；In addition, setting voltage-stabiliser tube D8 is for ensuring that metal-oxide-semiconductor under various dynamics The GS voltage of Q11 does not exceed its defined maximum value, damages to avoid the door source of metal-oxide-semiconductor Q11.

When the utility model is used, the 12V DC electricity that 12V power output end 1 exports boosts to 50V by booster circuit 2 DC voltage, and by the input terminal of 50V DC voltage feeding inverter circuit 3, when first port I/O of microcontroller 5 exports High level, pulse drive signal provide forward drive current through pulse transformer T1 for the grid of metal-oxide-semiconductor field effect transistor Q7, make MOS Field-effect tube Q7 conducting, when the 4th port I/O of microcontroller 5 exports high level, pulse drive signal is through pulse transformer T4 provides forward drive current for the grid of metal-oxide-semiconductor field effect transistor Q11, and metal-oxide-semiconductor field effect transistor Q11 is connected, meanwhile, microcontroller 5 Second port I/O export low level, pulse drive signal provides through pulse transformer T2 for the grid of metal-oxide-semiconductor field effect transistor Q8 Reverse drive electric current, metal-oxide-semiconductor field effect transistor Q8 cut-off, when the port third I/O of microcontroller 5 exports low level, pulsed drive Signal provides reverse drive electric current through pulse transformer T3 for the grid of metal-oxide-semiconductor field effect transistor Q10, and metal-oxide-semiconductor field effect transistor Q10 ends, Forward voltage is loaded by metal-oxide-semiconductor field effect transistor Q7 and metal-oxide-semiconductor field effect transistor Q11；When first port I/O of microcontroller 5 exports Low level, pulse drive signal provide reverse drive electric current through pulse transformer T1 for the grid of metal-oxide-semiconductor field effect transistor Q7, and MOS Effect pipe Q7 cut-off, when the 4th port I/O of microcontroller 5 exports low level, pulse drive signal is through pulse transformer T4 Reverse drive electric current is provided for the grid of metal-oxide-semiconductor field effect transistor Q11, metal-oxide-semiconductor field effect transistor Q11 cut-off, meanwhile, the of microcontroller 5 Two ports I/O export high level, and pulse drive signal provides forward direction through pulse transformer T2 for the grid of metal-oxide-semiconductor field effect transistor Q8 Driving current, metal-oxide-semiconductor field effect transistor Q8 conducting, when the port third I/O of microcontroller 5 exports high level, pulse drive signal Card is provided to driving current for the grid of metal-oxide-semiconductor field effect transistor Q10 through pulse transformer T3, and metal-oxide-semiconductor field effect transistor Q10 conducting passes through Metal-oxide-semiconductor field effect transistor Q8 and metal-oxide-semiconductor field effect transistor Q10 loads backward voltage, so that inverter circuit 3 be made to export the single-phase sine wave electricity of 36V It is depressed into load 4.Voltage detection module 8, the voltage that the voltage to inverter circuit 3 to load 4 is detected, and be will test are sent To microcontroller 5, the voltage that microcontroller 5 receives is compared with voltage security value, when the voltage that microcontroller 5 receives When meeting voltage security value, the normal output single-phase sine voltage signal of inverter circuit 1；When the voltage that microcontroller 5 receives When not meeting electric current safety value, microcontroller 5 controls inverter circuit 3 by driving circuit and turns off, and stops output single-phase sine wave Voltage signal, the voltage for avoiding inverter circuit 3 from exporting flow through load device and are in over-voltage and are burned.Current detection module 9 is right The electric current that inverter circuit 3 is detected to the electric current of 4 power supply of load, and will test is sent to microcontroller 5, microcontroller 5 The electric current received is compared with electric current safety value, when the electric current that microcontroller 5 receives meets electric current safety value, inversion The normal output single-phase sine voltage signal of circuit 3；It is micro- when the electric current that microcontroller 5 receives does not meet electric current safety value Controller controls inverter circuit shutdown by driving circuit, stops output single-phase sine voltage signal, avoids flowing through load device The electric current of part is excessive and is burned.Therefore the utility model simple structure and reasonable design, realizes the fast conducting of switching tube, and Avoid the setting of pulsed drive chip, moreover it is possible to detect the parameters such as working voltage, the electric current of inverter, guarantee that inverter is normal Steady operation.

The above is only the preferred embodiment of the utility model, not imposes any restrictions to the utility model, all According to any simple modification to the above embodiments of the utility model technical spirit, change and equivalent structural changes, still Belong in the protection scope of technical solutions of the utility model.

Claims (9)

1. a kind of single-phase sine-wave inverter device, it is characterised in that: including sequentially connected 12V power supply (1), booster circuit (2), inverter circuit (3), and to the control module that inverter circuit (3) is controlled, inverter circuit (3) output single-phase is just For string wave voltage to load (4), the control module includes microcontroller (5) and the driving that connects with microcontroller (5) output end The output of circuit (7), the inverter circuit (3) is terminated with voltage detection module (8) and current detection module (9), the voltage The output end of detection module (8) and current detection module (9) connects with the input terminal of microcontroller (5), the microcontroller (5) output is terminated with display screen (6), and the driving circuit (7) includes the first driving circuit, the second driving circuit, third drive Dynamic circuit and the 4th driving circuit, and first driving circuit, the second driving circuit, third driving circuit and the 4th driving electricity Road includes pushing away to exempt from circuit and pulse transformer isolated drive circuit.

2. a kind of single-phase sine-wave inverter device described in accordance with the claim 1, it is characterised in that: the booster circuit It (2) include chip LM5122, the 2nd pin ground connection of the chip LM5122；The 3rd pin of the chip LM5122 divides two-way, 12V power output end is connect by resistance R2 all the way, another way connects with one end of inductance L1；Draw the 4th of the chip LM5122 Foot connects 12V power output end；The 5th pin of the chip LM5122 divides two-way, connects the output of 12V power supply by resistance R3 all the way End, another way are grounded by capacitor C6；The 6th pin of the chip LM5122 divides two-way, connects 12V power supply by resistance R5 all the way Output end is grounded by resistance R11 all the way；The 7th pin of the chip LM5122 is grounded by capacitor C10；The chip The 8th pin of LM5122 is grounded by resistance R12；The 9th pin of the chip LM5122 is grounded；The of the chip LM5122 10 pins point, four tunnels, the first via connect with one end of capacitor C12, and the second tunnel connects with one end of capacitor C9, and third road passes through electricity R9 ground connection is hindered, the 4th tunnel connects 50V power output end by resistance R6；The 11st pin of the chip LM5122 divides two-way, all the way Connect with the other end of capacitor C12, another way connects with one end of resistance R10；The other end of the resistance R10 is with capacitor C9's The other end connects；The 12nd pin of the chip LM5122 is grounded by resistance R13；The 14th pin of the chip LM5122 is logical Cross capacitor C11 ground connection；The 15th pin of the chip LM5122 is grounded；The 16th pin and metal-oxide-semiconductor Q4 of the chip LM5122 Grid connect；The 17th pin of the chip LM5122 divides two-way, connects all the way with the anode of diode D1, another way passes through Capacitor C7 ground connection；Four tunnels of the 18th pin of the chip LM5122 point, the first via connect with one end of capacitor C5, the second Lu Yu electricity The other end of sense L1 connects, and third road connects with the source electrode of metal-oxide-semiconductor Q1, and the 4th tunnel connects with the drain electrode of metal-oxide-semiconductor Q4；The chip The 19th pin of LM5122 connects with the grid of metal-oxide-semiconductor Q1；The 20th pin of the chip LM5122 divides two-way, all the way with two poles The cathode of pipe D1 connects, and another way connects with the other end of capacitor C5；The drain electrode of the metal-oxide-semiconductor Q1 divides two-way, all the way through parallel connection Capacitor C2 and capacitor C1 ground connection, another way be 50V power output end；The source electrode of the metal-oxide-semiconductor Q4 is grounded.

3. a kind of single-phase sine-wave inverter device according to claim 1 or 2, it is characterised in that: the inversion electricity Road (3) includes the drain electrode of metal-oxide-semiconductor Q7, metal-oxide-semiconductor Q8, metal-oxide-semiconductor Q10 and metal-oxide-semiconductor Q11, the metal-oxide-semiconductor Q7 and the drain electrode of metal-oxide-semiconductor Q8 Connecting pin point three tunnels, connect all the way with one end of resistance R18, another way through capacitor C18 in parallel, capacitor C7, capacitor C16 and Capacitor C15 ground connection, third road connects with 50V power output end；Three tunnels of the source electrode of the metal-oxide-semiconductor Q7 point, all the way with resistance R19's One end connects, and another way connects with the drain electrode of metal-oxide-semiconductor Q10, and third road connects with one end of inductance L3；The source of the metal-oxide-semiconductor Q8 Tri- tunnel Ji Fen, connects with one end of resistance R20 all the way, and another way connects with the drain electrode of metal-oxide-semiconductor Q11, and third road is with inductance L2's One end connects；The source electrode of the metal-oxide-semiconductor Q10 divides two-way, connects all the way with one end of resistance R24, another way is connect by resistance R28 Ground；The source electrode of the metal-oxide-semiconductor Q11 divides two-way, connects all the way with one end of resistance R25, another way is grounded by resistance R29；Institute The grid for stating metal-oxide-semiconductor Q7 connects with the connecting pin of the other end of resistance R19 with the output end of first driving circuit, described The grid of metal-oxide-semiconductor Q8 connects with the connecting pin of the other end of resistance R20 with the output end of second driving circuit, the MOS The grid of pipe Q10 connects with the connecting pin of the other end of resistance R24 with the output end of the third driving circuit, the metal-oxide-semiconductor The grid of Q11 connects with the connecting pin of the other end of resistance R25 with the output end of the 4th driving circuit, the inductance L2's Three tunnels of the other end point, connect with one end of capacitor C20 all the way, and another way connects with one end of capacitor C21, and third road is inversion electricity One output end on road (3)；The other end of the inductance L3 point three tunnels, connect with the other end of capacitor C20 all the way, another way with The other end of capacitor C21 connects, and third road is the another output of inverter circuit (3).

4. a kind of single-phase sine-wave inverter device according to claim 1 or 2, it is characterised in that: the voltage inspection Survey module (8) include voltage sensor, model OPA2350 chip U1, the chip U1 the 1st pin and the 2nd pin Connecting pin connects with the one end resistance R30, four tunnels of the other end point of the resistance R30, the cathode phase of the first via and diode D16 It connects, the second tunnel connects with the cathode of diode D17, and third road is grounded by capacitor C29, the 4th tunnel and microcontroller (5) ADCIN1 pin connects；The anode of the diode D16 meets 3.3V power output end, the plus earth of the diode D17, institute The 3rd pin for stating chip U1 divides two-way, is connected all the way by resistance R34 with 3.3V power output end, and another way is with resistance R39's One end connects；The 4th pin of the chip U1 is grounded；The 5th pin of the chip U1 is grounded by resistance R33；The chip The 6th pin of U1 divides two-way, connects all the way with one end of resistance R31, and another way connects with one end of resistance R36；The resistance The other end of R31 divides two-way, is grounded all the way by resistance R60, and another way connects with the output end of voltage sensor；The chip The 7th pin of U1 divides two-way, connects all the way with the other end of resistance R36, and another way connects with the other end of resistance R39；It is described The 8th pin of chip U1 divides two-way, and all the way by capacitor C27 and capacitor C28 ground connection in parallel, another way connects the output of 3.3V power supply End, the voltage sensor are attempted by the output end of inverter circuit (3).

5. a kind of single-phase sine-wave inverter device according to claim 1 or 2, it is characterised in that: the electric current inspection Surveying module (9) includes current sensor and the chip U2 of model OPA2350, and the 1st pin of the chip U2 divides two-way, all the way Connect with one end of resistance R52, another way connects with one end of resistance R46；The 2nd pin of the chip U2 divides two-way, all the way Connect with the other end of resistance R52, another way connects with one end of resistance R50；The other end of the resistance R50 divides two-way, and one Road connects with one end of resistance R44, and another way connects an output end of current sensor；The 3rd pin of the chip U2 is divided to two Road is grounded by resistance R47 all the way, and another way connects with one end of resistance R49；The other end of the resistance R49 divides two-way, and one Road connects with the other end of resistance R44, connects the another output of current sensor all the way；The 4th pin of the chip U2 connects Ground；The 5th pin of the chip U2 divides two-way, meets 3.3V power output end, another way and resistance R46 by resistance R42 all the way The other end connect；The 6th pin of the chip U2 and the connecting pin of the 7th pin connect with one end of resistance R43, the resistance Four tunnels of the other end of R43 point, the first via connect with the cathode of diode D18, and the second tunnel connects with the cathode of diode D19, the Three tunnels are grounded by capacitor C40, and the 4th tunnel connects the ADCIN2 pin of microcontroller (5)；The anode of the diode D18 meets 3.3V 8th pin of power output end, the plus earth of the diode D19, the chip U2 divides two-way, all the way by electricity in parallel Hold C31 and capacitor C32 ground connection, another way connects 3.3V power output end.

6. a kind of single-phase sine-wave inverter device described in accordance with the claim 3, it is characterised in that: the first driving electricity Road includes first pushing away and exempting from circuit and the first pulse transformer isolated drive circuit, described first push away exempt from circuit include triode Q2 and Triode Q3, the first pulse transformer isolated drive circuit include pulse transformer T1, the collector of the triode Q2 12V power output end is connect, the base stage of the triode Q2 connects with one end of resistance R1, and the emitter of the triode Q2 is divided to two Road connects with the emitter of triode Q3 all the way, and another way connects with one end of capacitor C3；The base stage and electricity of the triode Q3 One end of resistance R7 connects, the connecting pin of the other end of the other end and resistance R7 of the resistance R1 and the end I/O of microcontroller (5) Mouth connection, one end of the primary side of the pulse transformer T1 connect with the other end of capacitor C3, the original of the pulse transformer T1 The other end on side and the collector of triode Q3 are grounded, the one end on the secondary side of the pulse transformer T1 and one end of capacitor C4 Connecting, the other end of the capacitor C4 divides two-way, connects all the way with the cathode of diode D3, one end phase of another way and resistance R4 It connects；Three tunnels of the other end of the resistance R4 point, connect with one end of resistance R8 all the way, the cathode phase of another way and voltage-stabiliser tube D2 It connects, third road connects with the grid of metal-oxide-semiconductor Q7；Four tunnels of the other end on the secondary side of the pulse transformer T1 point, the first via and two The anode of pole pipe D3 connects, and the second tunnel connects with the other end of resistance R8, and third road connects with the anode of voltage-stabiliser tube D2, the 4th tunnel Connect with the source electrode of metal-oxide-semiconductor Q7.

7. a kind of single-phase sine-wave inverter device described in accordance with the claim 3, it is characterised in that: the second driving electricity Road includes second pushing away and exempting from circuit and the second pulse transformer isolated drive circuit, described second push away exempt from circuit include triode Q5 and Triode Q6, the second pulse transformer isolated drive circuit include pulse transformer T2, the collector of the triode Q5 12V power output end is connect, the base stage of the triode Q5 connects with one end of resistance R14, the emitter point of the triode Q5 Two-way connects with the emitter of triode Q6 all the way, and another way connects with one end of capacitor C13；The base stage of the triode Q6 Connect with one end of resistance R16, the connecting pin and microcontroller (5) of the other end of the other end and resistance R16 of the resistance R14 The connection of the port I/O, one end of the primary side of the pulse transformer T2 connects with the other end of capacitor C13, the pulse transforming The other end of the primary side of device T2 and the collector of triode Q6 are grounded, the one end on the secondary side of the pulse transformer T2 and capacitor One end of C14 connects, and the other end of the capacitor C14 divides two-way, connects all the way with the cathode of diode D5, another way and resistance One end of R15 connects；Three tunnels of the other end of the resistance R15 point, connect with one end of resistance R17 all the way, another way and pressure stabilizing The cathode of pipe D4 connects, and third road connects with the grid of metal-oxide-semiconductor Q8；The other end on the secondary side of the pulse transformer T2 point four Road, the first via connect with the anode of diode D5, and the second tunnel connects with the other end of resistance R17, and third road is with voltage-stabiliser tube D4's Anode connects, and the 4th tunnel connects with the source electrode of metal-oxide-semiconductor Q8.

8. a kind of single-phase sine-wave inverter device described in accordance with the claim 3, it is characterised in that: the third driving electricity Road includes that third pushes away and exempts from circuit and third pulse transformer isolated drive circuit, the third push away exempt from circuit include triode Q9 and Triode Q12, the third pulse transformer isolated drive circuit include pulse transformer T3, the collector of the triode Q9 12V power output end is connect, the base stage of the triode Q9 connects with one end of resistance R22, the emitter point of the triode Q9 Two-way connects with the emitter of triode Q12 all the way, and another way connects with one end of capacitor C22；The base of the triode Q12 Pole connects with one end of resistance R26, the connecting pin of the other end of the other end and resistance R26 of the resistance R22 and microcontroller (5) the port I/O connection, one end of the primary side of the pulse transformer T3 connect with the other end of capacitor C22, and the pulse becomes The other end of the primary side of depressor T3 and the collector of triode Q12 are grounded, the one end on the secondary side of the pulse transformer T3 with One end of capacitor C23 connects, and the other end of the capacitor C23 divides two-way, connects all the way with the cathode of diode D7, another way with One end of resistance R23 connects；The other end of the resistance R23 point three tunnels, connect with one end of resistance R27 all the way, another way with The cathode of voltage-stabiliser tube D6 connects, and third road connects with the grid of metal-oxide-semiconductor Q10；The other end on the secondary side of the pulse transformer T3 Divide four tunnels, the first via connects with the anode of diode D7, and the second tunnel connects with the other end of resistance R27, third road and voltage-stabiliser tube The anode of D6 connects, and the 4th tunnel connects with the source electrode of metal-oxide-semiconductor Q10.

9. a kind of single-phase sine-wave inverter device described in accordance with the claim 3, it is characterised in that: the 4th driving electricity Road includes the 4th pushing away and exempting from circuit and the 4th pulse transformer isolated drive circuit, and the described 4th pushes away that exempt from circuit include triode Q13 With triode Q14, the 4th pulse transformer isolated drive circuit includes pulse transformer T4, the collection of the triode Q13 Electrode connects 12V power output end, and the base stage of the triode Q13 connects with one end of resistance R32, the hair of the triode Q13 Emitter-base bandgap grading divides two-way, connects all the way with the emitter of triode Q14, and another way connects with one end of capacitor C24；The triode The base stage of Q14 connects with one end of resistance R37, the connecting pin of the other end of the resistance R32 and the other end of resistance R37 with it is micro- The port I/O of controller (5) connects, and one end of the primary side of the pulse transformer T4 connects with the other end of capacitor C24, described The other end of the primary side of pulse transformer T4 and the collector of triode Q14 are grounded, the secondary side of the pulse transformer T4 One end connects with one end of capacitor C25, and the other end of the capacitor C25 divides two-way, connects all the way with the cathode of diode D9, separately Connect all the way with one end of resistance R35；Three tunnels of the other end of the resistance R35 point, connect with one end of resistance R38, separately all the way Connect all the way with the cathode of voltage-stabiliser tube D8, third road connects with the grid of metal-oxide-semiconductor Q11；The secondary side of the pulse transformer T4 The other end point four tunnels, the first via connect with the anode of diode D9, and the second tunnel connects with the other end of resistance R38, third road and The anode of voltage-stabiliser tube D8 connects, and the 4th tunnel connects with the source electrode of metal-oxide-semiconductor Q11.