CN209572088U - Pixel array, imaging sensor and the electronic device of imaging sensor - Google Patents
Pixel array, imaging sensor and the electronic device of imaging sensor Download PDFInfo
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- CN209572088U CN209572088U CN201921601104.2U CN201921601104U CN209572088U CN 209572088 U CN209572088 U CN 209572088U CN 201921601104 U CN201921601104 U CN 201921601104U CN 209572088 U CN209572088 U CN 209572088U
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Abstract
The disclosure provides the pixel array and electronic device of a kind of imaging sensor, imaging sensor.The pixel array includes active pixel and dark pixel.The active pixel includes the first transmission transistor and the first reset transistor.First transmission transistor is coupled between the first photoelectric conversion unit and the first floating diffusion nodes.First reset transistor is coupled between resetting voltage and first floating diffusion nodes.The dark pixel includes the second transmission transistor and the second reset transistor.Second transmission transistor is coupled between the second photoelectric conversion unit and the second floating diffusion nodes.Second reset transistor is coupled between the resetting voltage and second floating diffusion nodes.The control terminal of second reset transistor and the control terminal of second transmission transistor are coupled to each other.The pixel array can reduce fixed pattern noise and random noise caused by the influence injected by dark current and charge.
Description
Technical field
This disclosure relates to which image sensing technology more particularly to a kind of imaging sensor and image using active noise reduction pass
The pixel array of sensor.
Background technique
In addition to active pixel (active pixel), the settable dark pixel of imaging sensor (dark pixel) is passed with reducing
The noise contribution that sense output includes, the noise jamming being subject to from pixel array.The output of dark pixel can reflect not by
Dark current characteristic under light irradiation.The output of active pixel would generally be deducted the output of dark pixel and be passed with generating by imaging sensor
Sense output.However, dark pixel causes image there are still the unmatched problem of dot structure due to being influenced by technological fluctuation
The image quality of sensor is difficult to further be promoted.
Therefore, it is necessary to a kind of image sensing structures of innovation, can be further reduced the noise contribution that sensing output includes.
Utility model content
The first purpose of the disclosure is to provide the pixel of a kind of imaging sensor using active noise reduction, imaging sensor
Array and electronic device, to solve the above problems.
One embodiment of the disclosure provides a kind of pixel array of imaging sensor.The pixel array includes source image
Element and dark pixel.The active pixel is to generate the first picture element signal.The dark pixel is to generate the second picture element signal, institute
The second picture element signal is stated for correcting first picture element signal.The active pixel includes the first photoelectric conversion unit, first
Floating diffusion nodes, the first amplifying transistor, the first transmission transistor and the first reset transistor.The first amplification crystal
The control terminal of pipe is couple to first floating diffusion nodes, to generate first picture element signal.First transmission is brilliant
First connecting pin of body pipe and second connection end are respectively coupled to first floating diffusion nodes and first photoelectric conversion
Unit.First connecting pin of first reset transistor and second connection end are respectively coupled to resetting voltage and float with described first
Dynamic diffusion node.The dark pixel includes the second photoelectric conversion unit, the second floating diffusion nodes, the second amplifying transistor, the
Two transmission transistors and the second reset transistor.The control terminal of second amplifying transistor, which is couple to described second and floats, to expand
Dissipate node, to generate second picture element signal, wherein the first connecting pin of second amplifying transistor be couple to it is described
First connecting pin of the first amplifying transistor.First connecting pin of second transmission transistor is respectively coupled to second connection end
In second floating diffusion nodes and second photoelectric conversion unit.First connecting pin of second reset transistor with
Second connection end is respectively coupled to the resetting voltage and second floating diffusion nodes, wherein described second resets crystal
The control terminal of pipe and the control terminal of second transmission transistor are each coupled to same control signal, second reset transistor
Control terminal and the control terminal of second transmission transistor be each coupled to the control terminal of first reset transistor, with coupling
To the received same control signal of control terminal institute of first reset transistor；.
One embodiment of the disclosure provides a kind of imaging sensor.Described image sensor includes pixel array and place
Manage circuit.The pixel array has the multiple pixels for being arranged as multirow and multiple row.The multiple pixel include active pixel with
And dark pixel.The active pixel includes the first photoelectric conversion unit, the first floating diffusion nodes, the first amplifying transistor, the
One transmission transistor, the first reset transistor and the first signal output end.The control terminal of first amplifying transistor couples
To first floating diffusion nodes, to generate first picture element signal.First connection of first transmission transistor
End is respectively coupled to first floating diffusion nodes and first photoelectric conversion unit with second connection end.Described first is multiple
First connecting pin of bit transistor and second connection end are respectively coupled to resetting voltage and first floating diffusion nodes.It is described
First signal output end is couple to first amplifying transistor, to export first picture element signal.The dark pixel packet
Include the second photoelectric conversion unit, the second floating diffusion nodes, the second amplifying transistor, the second transmission transistor, the second reset crystalline substance
Body pipe and second signal output end.The control terminal of second amplifying transistor is couple to second floating diffusion nodes,
To generate second picture element signal, wherein the first connecting pin of second amplifying transistor is couple to first amplification
First connecting pin of transistor.First connecting pin of second transmission transistor and second connection end are respectively coupled to described the
Two floating diffusion nodes and second photoelectric conversion unit.First connecting pin of second reset transistor is connect with second
End is respectively coupled to the resetting voltage and second floating diffusion nodes, wherein the control of second reset transistor
End and the control terminal of second transmission transistor are each coupled to same control signal, the control terminal of second reset transistor
It is each coupled to the control terminal of first reset transistor, with the control terminal of second transmission transistor to be couple to described
The received same control signal of control terminal institute of one reset transistor.The second signal output end is couple to second amplification
Transistor, to export second picture element signal.The processing circuit is couple to first signal output end and described
Binary signal output end, to correct first picture element signal according to second picture element signal.
Embodiment of the disclosure provides a kind of electronic device, including the imaging sensor described in any one of above-mentioned.
Detailed description of the invention
Fig. 1 is the function box schematic diagram of an embodiment of the imaging sensor of the disclosure.
Fig. 2 is at least one dark picture in multiple active pixels shown in FIG. 1 at least in an active pixel and multiple dark pixels
The schematic diagram of one embodiment of element.
Fig. 3 is the schematic diagram of an embodiment in operation timing involved in dark pixel shown in Fig. 2.
Fig. 4 depicts the schematic diagram of an embodiment of an active pixel adjacent with active pixel shown in Fig. 2.
Fig. 5 depicts the schematic diagram of an embodiment of a dark pixel adjacent with dark pixel shown in Fig. 2.
Fig. 6 is at least one dark picture in multiple active pixels shown in FIG. 1 at least in an active pixel and multiple dark pixels
The schematic diagram of another embodiment of element.
Fig. 7 is at least one dark picture in multiple active pixels shown in FIG. 1 at least in an active pixel and multiple dark pixels
The schematic diagram of another embodiment of element.
Fig. 8 is the flow chart of an embodiment of the method for the operation imaging sensor of the disclosure.
Wherein, the reference numerals are as follows:
100 imaging sensors
110 pixel arrays
120 processing circuits
130 control circuits
201,401,601,701, P1,1-PM, N active pixel
202,502,602,702, P1, N+1-PM, N+Q dark pixel
211 first photoelectric conversion units
212 second photoelectric conversion units
411 third photoelectric conversion units
512 the 4th photoelectric conversion units
802,804,806 step
The first photodiode of PD1
The second photodiode of PD2
PD11 third photodiode
The 4th photodiode of PD21
The first current source of IS1
The second current source of IS2
The first reset transistor of MR1
The second reset transistor of MR2
MR3 third reset transistor
The first transmission transistor of MT1
The second transmission transistor of MT2
MT11 third transmission transistor
The 4th transmission transistor of MT21
The first amplifying transistor of MF1
The second amplifying transistor of MF2
MF3 third amplifying transistor
MS1 first choice transistor
The second selection transistor of MS2
MS3 third selection transistor
The first signal output end of TO1
TO2 second signal output end
TO3 third signal output end
The first floating diffusion nodes of FD1
The second floating diffusion nodes of FD2
FD3 third floating diffusion nodes
TR1, TR2, TR3, TT1, TT2, TT3, TF1, TF2, TF3, TS1, TS2, TS3 control terminal
RST first control signal
TX second control signal
RSEL third controls signal
TX11 the 4th controls signal
LS optical signal
PR1, PR2 photoelectric conversion result
VDD resetting voltage
The first electric signal of VFD1
The second electric signal of VFD2
VPD, VFD2 ' electric signal
The output of the first pixel of PO1
The output of the second pixel of PO2
The first picture element signal of APS
The second picture element signal of DPS
APS0 third picture element signal
The 4th picture element signal of DPS0
SS sensing output
PHR reset level sample phase
PHS signal level sample phase
PHE1, PHE2 exposure stage
T1-T7 time point
RSR1, RSR2 reset level sampled result
SSR1, SSR2 signal level sampled result
Specific embodiment
Specification and before claims in used some vocabulary and censure specific component.This field
Technical staff is, it is to be appreciated that manufacturer may call same component with different nouns.This specification and power before
Sharp claim is not in such a way that the difference of title is as component is distinguished, but with the difference of component functionally as area
The benchmark divided.Specification in the whole text and before claims when mentioned in "comprising" be an open term, therefore
It should be construed to " including but not limited to ".In addition, " coupling " word includes any electrical connection means directly or indirectly herein.Cause
This, if it is described herein that a first device is coupled to a second device, then represent the first device can directly be electrically connected to it is described
Second device, or it is electrically connected to the second device indirectly by other devices or connection means.
Fig. 1 is the function box schematic diagram of an embodiment of the imaging sensor of the disclosure.Imaging sensor 100 may include
Active pixel and dark pixel are to carry out active noise reduction (active noise cancellation, ANC).Imaging sensor 100 can
An including but not limited to pixel array 110, a processing circuit 120 and a control circuit 130, wherein pixel array 110 wraps
Include multiple active pixels (the also referred to as active pixel cell or active pixel circuit) P for being arranged in M row and N column1,1-PM,NAnd
It is arranged in multiple dark pixels (also referred to as dark pixel cells or dark pixel circuit) P of M row and Q column1,N+1-PM,N+Q, wherein M and N
It is greater than 1 positive integer, Q is greater than or equal to 1 positive integer.N number of active pixel column can generate N number of first pixel letter respectively
Number APS1-APSNAnd N number of dark pixel columns can generate Q the second picture element signal DPS respectively1-DPSQ。
In this embodiment, multiple dark pixel P1,N+1-PM,N+QThe side that may be provided at pixel array 110 is (such as multiple to have
Source pixel P1,1-PM,NRight side), however, the disclosure is not limited thereto.For example, multiple dark pixel P1,N+1-PM,N+QIt is settable
In the other side (such as multiple active pixel P of pixel array 1101,1-PM,NLeft side).In another example multiple dark pixel P1,N+1-
PM,N+QA part may be provided at the side of pixel array 110, multiple dark pixel P1,N+1-PM,N+QAnother part may be provided at
The other side of pixel array 110.
Processing circuit 120 is couple to multiple active pixel P1,N+1-PM,N+QWith multiple dark pixel P1,N+1-PM,N+Q, to basis
Second picture element signal of one or more dark pixel outputs, the first of the one or more active pixel outputs of Lai Jiaozheng (or compensation)
Picture element signal, and generate a sensing output.For example, processing circuit 120 can be each according to the multiple dark pixels for being located at certain a line
From the second picture element signal average signal level, Lai Jiaozheng (or compensation) is located at one or more active pixels of the row
First picture element signal.
Control circuit 130 is couple to pixel array 110, and the operation to control each pixel circuit in pixel array 110 is (all
As electric charge transfer, signal reset, signal amplifies and/or read operation), to generate corresponding picture element signal (i.e. the first pixel letter
Number or the second picture element signal).It is worth noting that, identical control signal can be used to control dark pixel in control circuit 130
Electric charge transfer and signal reset operation, to reduce noise jamming entrained by the second picture element signal of dark pixel output.
For convenience of understanding, hereafter arrange in pairs or groups complement metal oxide semiconductor image sensor (CMOS image
Sensor four transistor (4T) dot structures) illustrate the image sensing scheme of the disclosure.However, the disclosure is not with this
It is limited.Please refer to Fig. 2.Fig. 2 is multiple active pixel P shown in FIG. 11,1-PM,NIn an at least active pixel and multiple dark pixels
P1,N+1-PM,N+QIn an at least dark pixel an embodiment schematic diagram.That is, multiple active pixels shown in FIG. 1
P1,1-PM,NIn an at least active pixel can be implemented by active pixel 201 and multiple dark pixel P shown in FIG. 11,N+1-
PM,N+QIn an at least dark pixel can be implemented by dark pixel 202.In addition, what processing circuit 120 can be exported according to dark pixel 202
Second picture element signal DPS come correct active pixel 201 output the first picture element signal APS, with generate one sensing output SS.
In this embodiment, active pixel 201 may include (but being not limited to) one first photoelectric conversion unit 211, one first
Floating diffusion nodes (floating diffusion node) FD1, one first reset transistor MR1, one first transmission transistor
MT1, one first amplifying transistor MF1, a first choice transistor MS1 and one first signal output end TO1.
First photoelectric conversion unit 211 is to carry out photoelectric conversion.In this embodiment, the first photoelectric conversion unit 211
It can be implemented by (but being not limited to) one first photodiode PD1, wherein the first photodiode PD1 is to sense an optical signal
LS is to generate a photoelectric conversion result PR1.First reset transistor MR1 is coupled to a resetting voltage and the first floating diffusion nodes
Between FD1, to according to a first control signal RST(or can be referred to as reset signal) by the first floating diffusion nodes FD1 reset
To the resetting voltage.In this embodiment, the first connecting pin (such as both the source electrode or drain electrode of the first reset transistor MR1
One) and second connection end (such as source electrode or drain electrode both it is another) be respectively coupled to the resetting voltage and the first floating diffusion
Node FD1, and the control terminal TR1(such as grid of the first reset transistor MR1) to receive first control signal RST.In addition,
The resetting voltage can be implemented by a supply voltage VDD.However, the disclosure is not limited thereto.
First transmission transistor MT1 is coupled between the first photoelectric conversion unit 211 and the first floating diffusion nodes FD1,
Different from a second control signal TX(of first control signal RST or can be referred to as transmission signal to basis), by the first photoelectricity
The photoelectric conversion result PR1 that converting unit 211 generates is transmitted to the first floating diffusion nodes FD1.In this embodiment, it first passes
The first connecting pin (such as both source electrode or drain electrode one) of defeated transistor MT1 and second connection end (such as source electrode or drain electrode two
Person is another) it is respectively coupled to the first floating diffusion nodes FD1 and the first photoelectric conversion unit 211, and the first transmission transistor MT1
Control terminal TT1(such as grid) to receive second control signal TX.
The control terminal TF1(such as grid of first amplifying transistor MF1) the first floating diffusion nodes FD1 is couple to receive
First electric signal VFD1, and to amplify the first electric signal VFD1 on the first floating diffusion nodes FD1 to generate the first pixel
Signal APS.In addition, the first amplifying transistor MF1 is also to buffer the first electric signal VFD1, to export the after buffered
One the first picture element signal APS of electric signal VFD1().For example (but the present disclosure is not limited thereto), the first amplifying transistor MF1 can
Implemented by source follower (source follower).
First choice transistor MS1 is coupled between the first amplifying transistor MF1 and the first signal output end TO1, to
Control signal RSEL(according to a third or can be referred to as selection signal) by the first picture element signal APS from the first signal output end TO1
Output.In this embodiment, the first connecting pin (such as both source electrode or drain electrode one) and second of the first amplifying transistor MF1
(such as both source electrode or drain electrode are another) is respectively coupled to the first of supply voltage VDD and first choice transistor MS1 for connecting pin
Connecting pin (such as both source electrode or drain electrode one), second connection end (such as source electrode or drain electrode two of first choice transistor MS1
Person is another) then it is coupled to the first signal output end TO1.In addition, the control terminal TS1(such as grid of first choice transistor MS1
Pole) to receive third control signal RSEL.In certain embodiments, first control signal RST, second control signal TX and
Three control signal RSEL can control circuit 130 as shown in Figure 1 generate.In addition, active pixel 201 may also include one first
Current source IS1 can provide the current signal of the operation for active pixel 201.
The circuit structure of dark pixel 202 and the circuit structure of active pixel 201 can be substantially similar.In this embodiment, secretly
Pixel 202 may include (but being not limited to) one second photoelectric conversion unit 212, one second floating diffusion nodes FD2, one second reset
Transistor MR2, one second transmission transistor MT2, one second amplifying transistor MF2, one second selection transistor MS2 and 1
Binary signal output end TO2.
Second photoelectric conversion unit 212 is to carry out photoelectric conversion.In this embodiment, the second photoelectric conversion unit 212
It can be implemented by (but being not limited to) one second photodiode PD2, wherein a settable shading above the second photodiode PD2
Layer (Fig. 2 does not show).Therefore, the second photoelectric conversion unit 212 can produce the photoelectric conversion result PR2 being not affected by light under penetrating.
Second reset transistor MR2 is coupled to the above-mentioned resetting voltage of supply voltage VDD() and the second floating diffusion nodes FD2
Between, the second floating diffusion nodes FD2 is selectively reset to supply voltage VDD.For example, the second reset transistor
The first connecting pin (such as both source electrode or drain electrode one) of MR2 and second connection end (such as both source electrode or drain electrode are another) point
It is not couple to supply voltage VDD and the second floating diffusion nodes FD2.In addition, the second transmission transistor MT2 is coupled to the second photoelectricity
FD2 between converting unit 212 and the second floating diffusion nodes, to the photoelectric conversion for generating the second photoelectric conversion unit 212
As a result PR2 is transmitted to the second floating diffusion nodes FD2.For example, the first connecting pin (such as source electrode of the second transmission transistor MT2
Or drain electrode both one) and second connection end (such as source electrode or drain electrode the two it is another) be respectively coupled to the second floating diffusion nodes
FD2 and the second photoelectric conversion unit 212.It is worth noting that, the control terminal TR2(such as grid of the second reset transistor MR2)
With the control terminal TT2(such as grid of the second transmission transistor MT2) it is coupled to each other.Therefore, the second reset transistor MR2 and second
Transmission transistor MT2 is controlled by same control signal.The same control signal has different signal levels (such as high
Signal level and low-signal levels；Different from the supply voltage VDD with same signal level), make the second reset transistor MR2
It is connected with the second transmission transistor MT2 all in accordance with the same control signal-selectivity.
For example, when the first reset transistor MR1 conducting and the first transmission transistor MT1 disconnection, the second transmission transistor
MT2 and the second reset transistor MR2 are both turned on.In another example when the first reset transistor MR1 disconnection and the first transmission transistor
When MT1 is connected, the second transmission transistor MT2 and the second reset transistor MR2 are disconnected.In another example when the first reset transistor
When MR1 and the first transmission transistor MT1 are both turned on, the second transmission transistor MT2 and the second reset transistor MR2 are both turned on.
In addition, in this embodiment, the control of the control terminal TR2 of the second reset transistor MR2 and the second transmission transistor MT2
End TT2 processed is each coupled to the control terminal TR1 of the first reset transistor MR1, makes the second reset transistor MR2, the second transmission crystal
Pipe MT2 and the first reset transistor MR1 are controlled by first control signal RST jointly.The control terminal of first transmission transistor MT1
TT1 is then coupled to the second control signal TX different from first control signal RST.
The control terminal TF2(such as grid of second amplifying transistor MF2) the second floating diffusion nodes FD2 is couple to receive
Second electric signal VFD2, and to amplify the second electric signal VFD2 on the second floating diffusion nodes FD2 to generate the second pixel
Signals DP S.Second amplifying transistor MF2 is also to buffer the second electric signal VFD2, to export the second electricity after buffered
The second picture element signal DPS of signal VFD2().In this embodiment, the second amplifying transistor MF2 can be implemented by source follower.
However, the disclosure is not limited thereto.
Second selection transistor MS2 is coupled between the second amplifying transistor MF2 and second signal output end TO2, to
Second picture element signal DPS is exported from second signal output end TO2.In this embodiment, the first of the second amplifying transistor MF2
Connecting pin (such as both source electrode or drain electrode one) and second connection end (such as both source electrode or drain electrode are another) are respectively coupled to
The first connecting pin (such as both source electrode or drain electrode one) of supply voltage VDD and the second selection transistor MS2, the second selection is brilliant
The second connection end (such as both source electrode or drain electrode are another) of body pipe MS2 is then coupled to second signal output end TO2.In addition,
The control terminal TS2(such as grid of second selection transistor MS2) it can be with the control terminal TS1 of first choice transistor MS1 coupling each other
It connects to receive third control signal RSEL.For example, active pixel 201 and dark pixel 202 may be provided at pixel array shown in FIG. 1
Same a line in 110.Therefore, the second selection transistor MS2 can control signal RSEL selectively by the second pixel according to third
Signals DP S is exported from second signal output end TO2.In addition, dark pixel 202 may also include one second current source IS2, can provide
The current signal of operation for dark pixel 202.
Processing circuit 120 is couple to the first signal output end TO1 and second signal output end TO2, to respectively by the
One signal output end TO1 and second signal output end TO2 receive the first picture element signal APS and the second picture element signal DPS, and to the
One picture element signal APS and the second picture element signal DPS carries out relevant signal processing, to generate one first pixel output PO1 respectively
PO2 is exported with one second pixel.Processing circuit 120 can export PO2 according to the second pixel and correct the first pixel output PO1, to produce
Raw sensing output SS.
It is worth noting that, the structure of above-mentioned active pixel 201 and/or dark pixel 202 is the purpose of explanation, not
For limiting the scope of the present disclosure.In certain embodiments, active pixel 201 and dark pixel 202 may be provided at picture shown in FIG. 1
Same a line in pixel array 110, the wherein control of the control terminal TS1 of first choice transistor MS1 and the second selection transistor MS2
End TS2 is coupled to each other.Alternatively, the control terminal TR2 of the control terminal TR1 of the first reset transistor MR1 and the second reset transistor MR2
It is coupled to each other.
In certain embodiments, active pixel 201 and dark pixel 202 may be provided in pixel array 110 shown in FIG. 1
It does not go together.Processing circuit 120 is using the caused by the dark pixel 202 positioned at a certain pixel column (a row of pixels)
Two picture element signal DPS, to correct the first picture element signal APS caused by the active pixel 201 positioned at another pixel column.Second choosing
The control terminal TS2 for selecting transistor MS2 can be not coupled to the control terminal TS1 of first choice transistor MS1, wherein the second selection is brilliant
Body pipe MS2 and first choice transistor MS1 is controlled by different selection signals.Alternatively, the control of the second reset transistor MR2
End TR2 processed can be not coupled to the control terminal TR1 of the first reset transistor MR1, wherein the second reset transistor MR2 and first is multiple
Bit transistor MR1 is controlled by different reset signals.
Please together with Fig. 2 refering to Fig. 3.Fig. 3 is an embodiment in operation timing involved in dark pixel 202 shown in Fig. 2
Schematic diagram.In this embodiment, processing circuit 120 can respectively execute the first picture element signal APS and the second picture element signal DPS more
Secondary sampling operation exports PO1 to generate the first pixel output PO1 and the second pixel output PO2 respectively, and according to the first pixel
Sensing output SS is generated with the result of subtracting each other of the second pixel output PO2.For purposes of illustration, it arranges in pairs or groups below correlated-double-sampling
The operation of light and shade pixel 202 for (correlated double sampling), however, the disclosure is not limited thereto.This
Outside, active pixel 201 and dark pixel 202 can be located at identical pixel column, and wherein active pixel 201 can be by phase with dark pixel 202
With reset signal and selection signal control.
During processing circuit 120 executes correlated-double-sampling to the first picture element signal APS, active pixel 201 can be sequentially
Into a reset level sample phase (the reset level sampling phase) PHR of correlated-double-sampling and a signal level
Sample phase (signal level sampling phase) PHS.Firstly, image shown in FIG. 1 passes before time point T1
Sensor 100 is operated in an exposure stage PHE1.In time point T1, first choice transistor MS1 signal can be controlled according to third
RSEL conducting.Next, between exposure stage PHE1 and reset level sample phase PHR (such as in time point T2 and time
Between point T3), the first reset transistor MR1 can be connected according to first control signal RST, to reset the first floating diffusion nodes
FD1.In reset level sample phase PHR (such as between time point T3 and time point T4), the first reset transistor MR1 can
It is disconnected according to first control signal RST, processing circuit 120 can sample the first picture element signal APS, reset electricity to generate one
Flat sampled result RSR1.
Between reset level sample phase PHR and signal level sample phase PHS (such as at time point T4 and time point
Between T5), the first transmission transistor MT1 can be connected according to second control signal TX, and the first photoelectric conversion unit 211 is coupled
To the first floating diffusion nodes FD1, so that photoelectric conversion result PR1 is transmitted to the first floating diffusion nodes FD1.In signal level
In sample phase PHS (such as between time point T5 and time point T6), the first transmission transistor MT1 can believe according to the second control
Number TX is disconnected, and processing circuit 120 can again sample the first picture element signal APS, to generate a signal level sampled result
SSR1.Processing circuit 120 can subtract each other signal level sampled result SSR1 and reset level sampled result RSR1 to reduce and reset
The interference of noise, to generate the first picture according to the difference between reset level sampled result RSR1 and signal level sampled result SSR1
Element output PO1.
In addition, first resets crystalline substance before next exposure stage PHE2 (such as between time point T6 and time point T7)
Body pipe MR1 and the first transmission transistor MT1 can be connected again, to reset the first floating diffusion nodes FD1 and the first light simultaneously
Electric diode PD1.
Similarly, during processing circuit 120 executes correlated-double-sampling to the second picture element signal DPS, dark pixel 202 can
Sequentially enter reset level sample phase PHR and signal level sample phase PHS.In time point T1, the second selection transistor MS1
Signal RSEL conducting can be controlled according to third.Between exposure stage PHE1 and reset level sample phase PHR (such as when
Between between point T2 and time point T3), the second reset transistor MR2 and the second transmission transistor MT2 are all in accordance with first control signal
RST conducting is expanded with resetting the second floating diffusion nodes FD2 and the second photoelectric conversion unit 212 being couple to the second floating simultaneously
Dissipate node FD2.For example, the second electric signal VFD2 on the second floating diffusion nodes FD2 can be reset to supply voltage VDD or connect
The electric signal VPD of one end of the signal level and the second photodiode PD2 of nearly supply voltage VDD can be reset to power supply
Voltage VDD or signal level close to supply voltage VDD.Next, in reset level sample phase PHR (such as in the time
Between point T3 and time point T4), the second reset transistor MR2 can be disconnected according to first control signal RST, and processing circuit 120 can
Second picture element signal DPS is sampled, to generate a reset level sampled result RSR2.
Between reset level sample phase PHR and signal level sample phase PHS (such as at time point T4 and time point
Between T5), since the second transmission transistor MT2 maintains to disconnect according to first control signal RST, the second photoelectric conversion list
Member 212 is not coupled to the second floating diffusion nodes FD2.In signal level sample phase PHS (such as in time point T5 and time
Between point T6), processing circuit 120 can again sample the second picture element signal DPS, to generate a signal level sampled result
SSR2.Processing circuit 120 can subtract each other signal level sampled result SSR2 and reset level sampled result RSR2 to reduce and reset
The interference of noise, to generate the second picture according to the difference between reset level sampled result RSR2 and signal level sampled result SSR2
Element output PO2.
In addition, second resets crystalline substance before next exposure stage PHE2 (such as between time point T6 and time point T7)
Body pipe MR2 and the second transmission transistor MT2 can be connected again, to reset the second floating diffusion nodes FD2 and the second light simultaneously
Electric diode PD2.
It is worth noting that, within reset level sample phase PHR incipient a period of time, by clock feedthrough
The influence of (clock feedthrough), charge can inject parasitic capacitance (such as the second of dark pixel 202 in dark pixel 202
The grid source of second transmission transistor MT2 of the gate-source capacitance and/or gate leakage capacitance and/or dark pixel 202 of reset transistor MR2
Capacitor and/or gate leakage capacitance), decline the signal level of the second electric signal VFD2.Since there are dot structures between each pixel
Unmatched problem, therefore, above-mentioned Charge injection effect may will increase fixed pattern noise (fixed pattern noise)
Interference.In addition, above-mentioned Charge injection effect may also will increase the random noise (temporal noise) changed over time
Interference.That is, the reset level sampled result RSR2 of dark pixel 202 may be carried by charge injection (or clock
Feedthrough) influence and the fixed pattern noise and random noise that generate.
For purposes of illustration, the electric charge transfer and signal for controlling dark pixel is also shown using different control signals in Fig. 3
Illustrative signal waveform on floating diffusion nodes involved in the operation of reset, to further illustrate disclosure image sensing side
The effect of case has.
As an example it is assumed that the second transmission transistor MT2 is the second control by being used to control the first transmission transistor MT1
In the case of signal TX is controlled, the electric signal on the second floating diffusion nodes FD2 can be labeled as VFD2 '.It is adopted in reset level
Between sample stage PHR and signal level sample phase PHS (such as between time point T4 and time point T5), due to the second transmission
Transistor MT2 can be connected according to second control signal TX, and therefore, the dark current that the second photoelectric conversion unit 212 generates can drop
The signal level of electric signal VFD2 ' on low second floating diffusion nodes FD2.However, the mismatch of dot structure will cause respectively
Dark pixel generates different dark current.Different dark current can introduce the fixed mode that other are generated by technological fluctuation and make an uproar
Sound also will increase the interference of the random noise changed over time.In addition, incipient one section in signal level sample phase PHS
In time, since the second transmission transistor MT2 switches to off-state by state, the second floating diffusion nodes FD2 can be again
It is secondary to be influenced by clock feedthrough, decline the signal level of electric signal VFD2 ' further.Therefore, in the second transmission transistor
MT2 is in the case of being controlled by the second control signal TX for being used to control the first transmission transistor MT1, to reset in addition to carrying
The fixed pattern noise and random noise introduced in level sampling stage PHR, signal level sampled result SSR2 can also be carried secretly
Noise contribution caused by electric current, and the fixed pattern noise and random noise that are introduced in signal level sample phase PHS.
Interference caused by above-mentioned Charge injection effect (fixed pattern noise and random noise) can pass through synchronously control
The scheme of two reset transistor MR2 and the second transmission transistor MT2 improves.For example, in reset level sample phase PHR and letter
Between (such as between time point T4 and time point T5) number level sampling stage PHS, the second reset transistor of dark pixel 202
MR2 and the second transmission transistor MT2 maintains to disconnect all in accordance with first control signal RST.Therefore, in signal level sample phase
In PHS (such as between time point T5 and time point T6), signal level sampled result SSR2 caused by processing circuit 120 is not
The second transmission transistor MT2 will not only be carried, the introduced noise jamming of off-state is switched to by state, and can carried
The fixed pattern noise and random noise introduced in reset level sample phase PHR.Since processing circuit 120 can be by signal electricity
Flat sampled result SSR2 and reset level sampled result RSR2 subtract each other to generate the second pixel output PO2, therefore, can eliminate or greatly
Width is reduced to be influenced in reset level sample phase PHR by charge injection (or clock feedthrough) among the second pixel output PO2
And the noise contribution generated.
That is, the image sensing scheme due to the disclosure controls the charge of dark pixel using identical control signal
Transfer and signal reset operation, therefore, can be greatly decreased in dark pixel by dark current and charge injection (or clock feedthrough)
Influence caused by fixed pattern noise and random noise.
Above-described image element circuit structure is for purposes of illustration, to be not used to limit the disclosure.In certain implementations
In example, the image sensing scheme of the disclosure can be used for comprising shared dot structure (shared pixel architecture)
Imaging sensor.For example, dark pixel can be used to correct multiple active pixels adjacent to each other, wherein the multiple phase each other
Adjacent active pixel can share multiple transistors (such as reset transistor, amplifying transistor and/or selection transistor).
Fig. 4 depicts the schematic diagram of an embodiment of an active pixel adjacent with active pixel 201 shown in Fig. 2.In
In this embodiment, active pixel 401(multiple active pixel P such as shown in FIG. 11,1-PM,NIn an active pixel) with it is active
Pixel 201 is adjacent to each other.For example, active pixel 401 and active pixel 301 may be provided at adjacent pixel column.There is source image
Element 401 is to generate a third picture element signal APS0, wherein the second picture element signal DPS can also be used to correct third picture element signal
APS0.That is, processing circuit 120 can correct third picture element signal APS0 according to the second picture element signal DPS.
In this embodiment, active pixel 401 and active pixel 201 share the first floating diffusion nodes FD1, the first reset
Transistor MR1, the first amplifying transistor MF1, first choice transistor MS1, the first signal output end TO1 and the first current source
IS1.Active pixel 401 also includes a third photoelectric conversion unit 411 and a third transmission transistor MT11.Third photoelectric conversion
Unit 411 can be implemented by a third photodiode PD11, and optical signal LS is carried out photoelectric conversion.Third transmission transistor
MT11 can control signal TX11(according to one the 4th or can be referred to as transmission signal) it selectively turns on, wherein the 4th control signal
TX0 can control circuit 130 as shown in Figure 1 provide.Since those skilled in the art passes through the correlation of reading Fig. 1 to Fig. 3
After paragraph explanation, it should be appreciated that the second picture element signal DPS that processing circuit 120 is generated according to dark pixel 202 is active to correct
Details of operation involved in the third picture element signal APS0 that pixel 401 generates, therefore, further instruction are just no longer superfluous herein
It states.
In certain embodiments, the output of multiple dark pixels can be used to correct one and have in the image sensing scheme of the disclosure
The output of source pixel.Fig. 5 depicts the schematic diagram of an embodiment of a dark pixel adjacent with dark pixel 202 shown in Fig. 2.In
In this embodiment, dark pixel 502(multiple dark pixel P such as shown in FIG. 11,N+1-PM,N+QIn a dark pixel) and dark pixel
202 is adjacent to each other.For example, dark pixel 502 and dark pixel 202 may be provided at adjacent pixel column.Dark pixel 502 is to produce
Raw one the 4th picture element signal DPS0, wherein the 4th picture element signal DPS0 can be used for correcting the first picture element signal APS.That is,
Processing circuit 120 can correct the first picture element signal APS according to the second picture element signal DPS and the 4th picture element signal DPS0.For example, place
Manage circuit 120 being averaged according to the second picture element signal DPS and the 4th picture element signal DPS0, correct the first picture element signal APS.
In this embodiment, dark pixel 502 can have structure identical as dark pixel 202/similar.Dark pixel 502 includes
(but being not limited to) one the 4th photoelectric conversion unit 512, a third floating diffusion nodes FD3, one the 4th transmission transistor MT21, one
Third reset transistor MR3, a third amplifying transistor MF3, a third selection transistor MS3 and a third signal output end
TO3.4th photoelectric conversion unit 512 can be implemented by one the 4th phototransistor PD21.4th transmission transistor MT21 coupling
Between the 4th photoelectric conversion unit 512 and third floating diffusion nodes FD3.Third reset transistor MR3 is coupled to power supply electricity
It presses between VDD and third floating diffusion nodes FD3, wherein the control terminal TR2 of the second reset transistor MR2, the second transmission crystal
The control terminal TT21 of the control terminal TT2 of pipe MT2, the control terminal TR3 and the 4th transmission transistor MT21 of third reset transistor MR3
It is coupled to each other.In certain embodiments, the control of the control terminal TR2 of the second reset transistor MR2, the second transmission transistor MT2
The control terminal TT21 of the control terminal TR3 and the 4th transmission transistor MT21 of end TT2 processed, third reset transistor MR3 are each coupled to
The control terminal TR1 of first reset transistor MR1.For example, active pixel 201, dark pixel 202 and dark pixel 502 are arranged at together
In one pixel column.In addition, in certain embodiments, the control terminal TS3 of third selection transistor MS3 is couple to the second selection crystal
The control terminal TS2 of pipe MS2.
After relevant paragraph explanation of the those skilled in the art by reading Fig. 1 to Fig. 3, it should be appreciated that processing electricity
The 4th picture element signal DPS0 that the second picture element signal DPS and dark pixel 502 that road 120 is generated according to dark pixel 202 are generated is come school
Details of operation involved in the first picture element signal APS that positive active pixel 201 generates, therefore, further instruction is herein just not
It repeats again.
In certain embodiments, the pixel knot with other transistor numbers can be used in the image sensing scheme of the disclosure
Structure.Fig. 6 is multiple active pixel P shown in FIG. 11,1-PM,NIn an at least active pixel and multiple dark pixel P1,N+1-PM,N+QIn
An at least dark pixel another embodiment schematic diagram.That is, multiple active pixel P shown in FIG. 11,1-PM,NIn extremely
A few active pixel can be implemented by active pixel 601 and multiple dark pixel P shown in FIG. 11,N+1-PM,N+QIn at least one
Dark pixel can be implemented by dark pixel 602.Between the structure of active pixel 601 and the structure of active pixel shown in Fig. 2 201
The difference is that active pixel 601 uses three transistor (3T) current mode dot structures, it may include the first photoelectricity shown in Fig. 2
Converting unit 211, the first reset transistor MR1, the first transmission transistor MT1 and the first amplifying transistor MF1 and the first letter
Number output end TO1.Similarly, between the structure of dark pixel 602 and the structure of dark pixel shown in Fig. 2 202 the difference is that having
Dark pixel 602 uses three transistor current type dot structures, may include the second photoelectric conversion unit 212 shown in Fig. 2, the
Two reset transistor MR2, the second transmission transistor MT2 and the second amplifying transistor MF2 and second signal output end TO2.By
After those skilled in the art is by reading the relevant paragraph explanation of Fig. 1 to Fig. 3, it should be appreciated that pixel knot shown in fig. 6
The details of structure and relevant signal processing operations, therefore repeat description just repeats no more herein.
It is worth noting that, in certain embodiments, the amplification of the first amplifying transistor MF1 shown in fig. 6 and/or second is brilliant
Body pipe MF2 can be implemented by other circuit structures.As long as that is, using the control terminal and biography with reset transistor
The dark pixel (such as dot structure shown in Fig. 7) that the control terminal of defeated transistor is coupled to each other, relevant imaging sensor include
Within the protection scope of the disclosure.
Embodiment of the disclosure additionally provides a kind of electronic device, including arbitrary imaging sensor among the above.For example, electric
Sub-device can be the camera comprising imaging sensor, video camera, safety monitoring device etc., electronic device be also possible to include
The mobile devices such as mobile phone, the plate of above-mentioned imaging sensor.Electronic device is not limited to object recited herein.
In addition, the image sensing scheme of the disclosure can simply be summarized as flow chart shown in Fig. 8.Fig. 8 is the behaviour of the disclosure
Make the flow chart of an embodiment of the method for imaging sensor.Described image sensor includes an active pixel and a dark pixel.
The active pixel and the dark pixel generate one first picture element signal and one second picture element signal respectively.If obtained knot
Fruit is substantially roughly the same, then step is not necessarily intended to carry out according to sequence shown in Fig. 8.For example, certain steps can pacify
It inserts in wherein.For convenience of explanation, arrange in pairs or groups below dot structure shown in Fig. 2 imaging sensor and when operation shown in Fig. 3
Sequence illustrates control method shown in Fig. 8.However, being applied to control method shown in Fig. 8 using other dot structures (such as
Fig. 4 is to dot structure shown in Fig. 7) imaging sensor be feasible.Control method shown in Fig. 8 can simply be concluded such as
Under.
Step 802: between the exposure stage and the first sample phase of described image sensor, resetting the active pixel
Floating diffusion nodes, and according to first control signal, reset the floating diffusion nodes of the dark pixel and simultaneously will described in
The photoelectric conversion unit of dark pixel is couple to the floating diffusion nodes of the dark pixel.For example, exposure stage shown in Fig. 3
Before PHE1 and reset level sample phase PHR, the first floating diffusion nodes FD1 is resetted, and according to first control signal
RST1 resets the second floating diffusion nodes FD2 and the second photoelectric conversion unit 212 is couple to the second floating diffusion nodes simultaneously
FD2。
Step 804: between first sample phase and the second sample phase of described image sensor, having described
The photoelectric conversion unit of source pixel is couple to the floating diffusion nodes of the active pixel, and according to the first control signal
The photoelectric conversion unit of the dark pixel is set to be not coupled to the floating diffusion nodes of the dark pixel.For example, being adopted in reset level
Between sample stage PHR and signal level sample phase PHS, the first photoelectric conversion unit 211 is couple to the first floating diffusion section
Point FD1, and so that the second photoelectric conversion unit 212 is not coupled to the second floating diffusion nodes according to first control signal RST
FD2。
Step 806: in first sample phase and second sample phase, respectively to the first of active pixel generation
Picture element signal is sampled, and the second picture element signal generated respectively to dark pixel samples, to generate sensing output.Example
Such as, between reset level sample phase PHR and signal level sample phase PHS, respectively to the first of the generation of active pixel 201
Picture element signal APS is sampled, and the second picture element signal DPS generated respectively to dark pixel 202 is sampled, and is passed with generating
Sense output SS.
After being illustrated due to those skilled in the art by the relevant paragraph of reading Fig. 1 to Fig. 7, it should be appreciated that Fig. 8 institute
The details of each step in the control methods shown, therefore further instruction just repeats no more herein.
The electric charge transfer and signal that dark pixel is controlled by identical control signal reset operation, and the image of the disclosure passes
Sense scheme can be greatly decreased in dark pixel by fixed caused by the influence of dark current and charge injection (or clock feedthrough)
Modal noise and random noise further increase sensing quality.
The foregoing is merely embodiment of the disclosure, are not limited to the disclosure, for those skilled in the art
For member, the disclosure can have various modifications and variations.It is all the disclosure spirit and principle within, it is made it is any modification,
Equivalent replacement, improvement etc., should be included within the protection scope of the disclosure.
Claims (10)
1. a kind of pixel array of imaging sensor characterized by comprising
Active pixel, to generate the first picture element signal, the active pixel includes:
First photoelectric conversion unit；
First floating diffusion nodes；
First amplifying transistor, the control terminal of first amplifying transistor are couple to first floating diffusion nodes, to
Generate first picture element signal；
First transmission transistor, the first connecting pin of first transmission transistor and second connection end are respectively coupled to described the
One floating diffusion nodes and first photoelectric conversion unit；And
First reset transistor, the first connecting pin of first reset transistor and second connection end are respectively coupled to reset electricity
Pressure and first floating diffusion nodes；And
Dark pixel, to generate the second picture element signal, second picture element signal is described for correcting first picture element signal
Dark pixel includes:
Second photoelectric conversion unit；
Second floating diffusion nodes；
Second amplifying transistor, the control terminal of second amplifying transistor are couple to second floating diffusion nodes, to
Second picture element signal is generated, wherein the first connecting pin of second amplifying transistor is couple to the first amplification crystal
First connecting pin of pipe；
Second transmission transistor, the first connecting pin of second transmission transistor and second connection end are respectively coupled to described the
Two floating diffusion nodes and second photoelectric conversion unit；And
Second reset transistor, the first connecting pin and the second connection end of second reset transistor are respectively coupled to described multiple
Position voltage and second floating diffusion nodes, wherein the control terminal of second reset transistor and second transmission are brilliant
The control terminal of body pipe is each coupled to same control signal；The control terminal of second reset transistor and the second transmission crystal
The control terminal of pipe is each coupled to the control terminal of first reset transistor, to be couple to the control of first reset transistor
The received same control signal of end institute.
2. pixel array as described in claim 1, which is characterized in that the control terminal of first transmission transistor is couple to not
It is same as another control signal of the same control signal.
3. pixel array as claimed in claim 1 or 2, which is characterized in that the active pixel and dark pixel setting exist
Same a line in the pixel array.
4. pixel array as claimed in claim 1 or 2, which is characterized in that the first connecting pin of first amplifying transistor
The resetting voltage is each coupled to the first connecting pin of second amplifying transistor.
5. pixel array as claimed in claim 4, which is characterized in that the dark pixel further include:
Second signal output end；And
Second selection transistor, to export second picture element signal from the second signal output end, wherein described
The second connection end of two amplifying transistors is couple to the first connecting pin of second selection transistor, the second selection crystal
The second connection end of pipe is couple to the second signal output end.
6. pixel array as claimed in claim 1 or 2, which is characterized in that further include:
Another active pixel, to generate third picture element signal, second picture element signal is also used to correct the third pixel
Signal；Another active pixel and the active pixel share first floating diffusion nodes and described first and reset crystal
Pipe；Another active pixel further includes third photoelectric conversion unit and third transmission transistor, the third transmission transistor
It is coupled between the third photoelectric conversion unit and first floating diffusion nodes.
7. pixel array as claimed in claim 1 or 2, which is characterized in that it further include another dark pixel, another dark pixel
Include:
4th photoelectric conversion unit；
Third floating diffusion nodes；
4th transmission transistor, the first connecting pin of the 4th transmission transistor and second connection end are respectively coupled to described the
Three floating diffusion nodes and the 4th photoelectric conversion unit；And
Third reset transistor, the first connecting pin and the second connection end of the third reset transistor are respectively coupled to described multiple
Between position voltage and the third floating diffusion nodes, wherein the control terminal of second reset transistor, second transmission
The control terminal of the control terminal of transistor, the control terminal of the third reset transistor and the 4th transmission transistor is each coupled to
The control terminal of first reset transistor.
8. a kind of imaging sensor characterized by comprising
Pixel array as described in any one of claims 1 to 7 has the multiple pixels for being arranged as multirow and multiple row, described
Multiple pixels include:
Active pixel, comprising:
First transmission transistor is coupled between the first photoelectric conversion unit and the first floating diffusion nodes；And
First reset transistor is coupled between resetting voltage and first floating diffusion nodes；
First amplifying transistor, the control terminal of first amplifying transistor are couple to first floating diffusion nodes, to
Generate the first picture element signal；And
First signal output end is couple to first amplifying transistor, to export first picture element signal；And
Dark pixel, comprising:
Second transmission transistor is coupled between the second photoelectric conversion unit and the second floating diffusion nodes；
Second reset transistor is coupled between the resetting voltage and second floating diffusion nodes, wherein described second
The control terminal of reset transistor and the control terminal of second transmission transistor are coupled to each other, the control of second reset transistor
The control terminal of end processed and second transmission transistor is each coupled to the control terminal of first reset transistor, to be couple to
State the received same control signal of control terminal institute of the first reset transistor；
Second amplifying transistor, the control terminal of second amplifying transistor are couple to second floating diffusion nodes, to
The second picture element signal is generated, wherein the first connecting pin of second amplifying transistor is couple to first amplifying transistor
First connecting pin；And
Second signal output end is couple to second amplifying transistor, to export second picture element signal；And
Processing circuit is couple to first signal output end and the second signal output end, to according to second picture
First picture element signal described in plain signal correction.
9. imaging sensor as claimed in claim 8, which is characterized in that the active pixel further includes first choice crystal
Pipe, the second connection end of first amplifying transistor are couple to the first connecting pin of the first choice transistor, and described the
The second connection end of one selection transistor is couple to first signal output end；The dark pixel further includes the second selection crystal
Pipe, the second connection end of second amplifying transistor are couple to the first connecting pin of second selection transistor, and described the
The second connection end of two selection transistors is couple to the second signal output end；The control terminal of the first choice transistor with
The control terminal of second selection transistor is coupled to each other.
10. a kind of electronic device, which is characterized in that including imaging sensor described in claim 8 or 9.
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| CN114125208A (en) * | 2020-08-25 | 2022-03-01 | 原相科技股份有限公司 | Image sensing device and processing circuit arranged in pixel unit |
| CN114125208B (en) * | 2020-08-25 | 2024-02-06 | 原相科技股份有限公司 | Image sensing device and processing circuit arranged in pixel unit |
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