CN209544363U - A kind of equally distributed copper-indium-galliun-selenium film solar cell absorbed layer of gallium element - Google Patents
A kind of equally distributed copper-indium-galliun-selenium film solar cell absorbed layer of gallium element Download PDFInfo
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- CN209544363U CN209544363U CN201920635526.5U CN201920635526U CN209544363U CN 209544363 U CN209544363 U CN 209544363U CN 201920635526 U CN201920635526 U CN 201920635526U CN 209544363 U CN209544363 U CN 209544363U
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Abstract
The utility model discloses a kind of equally distributed copper-indium-galliun-selenium film solar cell absorbed layer of gallium element, and including the base absorption layer that m group is mutually laminated, every group of base absorption layer includes the copper and indium gallium film layer and selenium film layer being laminated from the bottom to top, 2≤m≤5；By being inserted into selenium film layer in copper and indium gallium film layer, solve the problems, such as that gallium element is unevenly distributed in CuInGaSe absorbed layer, since selenium layer two sides are contacted with copper and indium gallium film layer in presoma lamination, selenylation reaction is carried out toward presoma two sides, so that the gradient of gallium is along the absorbed layer back side and absorbs layer surface both direction, to promote the increase of gallium element depth distribution and absorbed layer band gap width in CuInGaSe absorbed layer, and then improve the open-circuit voltage and photoelectric conversion efficiency of thin-film solar cells.
Description
Technical field
The utility model relates to technical field of thin-film solar, specifically a kind of equally distributed copper and indium gallium of gallium element
Selenium absorbing layer of thin film solar cell.
Background technique
Solar energy is widely paid close attention to and is rapidly developed as a kind of important renewable energy.With photovoltaic
The sustainable development and progress of technology, photovoltaic power generation cost constantly decline, and photovoltaic power generation competitiveness persistently enhances, it is contemplated that complete
Ball photovoltaic market will continue to keep rapid growth in the future for a long period of time.
Compared with conventional crystalline silicon, amorphous silicon battery, copper indium gallium selenide (CIGS) thin-film solar cells is thin as a new generation
Film battery, has that dim light power generation performance is good, at low cost, temperature coefficient is low, the energy recovery phase is short, the service life is long, power generation stabilization, anti-spoke
The advantages such as ability is strong, production technology is pollution-free are penetrated, " future of solar energy " are chosen as by industry, market prospects are huge.CIGS
It is a kind of p-type semiconductor material of direct band gap, absorption coefficient is up to 105The CIGS thin film of/cm, 2 μ m-thicks are just can absorb
90% or more sunlight.Copper indium gallium selenide cell transfer efficiency be in thin-film solar cells it is highest, in December, 2017 reaches
To 22.9% photoelectric conversion efficiency, therefore the country such as Japan, Germany all investment huge funds carry out research and industrialization.
The preparation of CIGS absorbed layer is the core process of copper-indium-galliun-selenium film solar cell.Currently, preparing in the world
There are two main classes for the technique of CIGS thin film, and one kind is the " steaming altogether developed by renewable energy National Laboratory, the U.S. (NREL)
Method ", another kind of is " the sputtering and selenization technique method " used using companies such as Solar Frontier, Avancis as representative.As experiment
When preparing the copper-indium-galliun-selenium film solar cell of small area in room, the CIGS thin film quality for steaming method deposition altogether is preferable, battery effect
Rate is higher, but evaporation is unable to accurately control that element ratio, poor repeatability, stock utilization be not high, large area difficult to realize is uniform
Stablize film forming, thus limits its application in large-scale industrial production.And sputtering and selenization technique method technique is relatively easy, it can be with
Splash-proofing sputtering metal alloy-layer over large-area glass substrate, can accurately control copper, indium, the ratio of gallium element, rear selenizing material can
To use gaseous state or solid selenium source, the film performance of preparation is excellent, is very suitable to large area exploitation, therefore sputtering and selenization technique method
It is considered more preferably industrialization route.
In sputtering and selenization technique method, the formation of CIGS absorbed layer is to stack a series of selenidation process of elemental precursor.So
And CIGS absorbed layer usually close to back electrode bottom at show apparent Ga element segregation the phenomenon that, this effect
Cause is the differential responses dynamics of the compound containing In and Ga.Reaction temperature ratio due to forming the selenides phase of Ga forms Cu
It is about 100 DEG C high with the selenides temperature of In, so richness Ga phase is accumulated in the bottom section of stack layer, until forming richness there
The CIGS absorbed layer of Ga.Once forming the reaction of chalcopyrite CIGS absorbed layer, the gradient established can only be by In and Ga
Phase counterdiffusion carry out relaxation, and this process needs biggish thermal activation energy, though under higher annealing temperature, when increasing annealing
Between, also only seldom mutual diffusion can be realized.The purpose that Ga is mixed in CIGS thin film is to increase the band for absorbing layer material
Gap width is continuously adjusted it in 1.04eV to 1.67eV range, and realizes the best match with solar spectrum.But Ga is inclined
The problem of analysis, the open-circuit voltage of battery can be reduced, to influence photoelectric conversion efficiency.
Utility model content
The purpose of this utility model is to provide a kind of equally distributed copper-indium-galliun-selenium film solar cells of gallium element to inhale
Layer is received, which solves the problems, such as the segregation of Ga present in existing product, improve the open-circuit voltage of thin-film solar cells
And photoelectric conversion efficiency.
The technical scheme adopted by the utility model to solve the technical problem is as follows:
A kind of equally distributed copper-indium-galliun-selenium film solar cell absorbed layer of gallium element, the basis being mutually laminated including m group
Absorbed layer, every group of base absorption layer include the copper and indium gallium film layer and selenium film layer being laminated from the bottom to top, 2≤m≤5.
Further, the copper and indium gallium film layer composite film that include n group be made of copper gallium film layer and indium film stack, 1
≤n≤10。
Further, the copper and indium gallium film layer composite film that include n group be made of copper and indium film layer and gallium film stack, 1
≤n≤10。
Further, the copper and indium gallium film layer includes the composite film that n group is made of copper gallium film layer and copper and indium film stack,
1≤n≤10。
The utility model has the beneficial effects that solving copper indium gallium selenide suction by being inserted into selenium film layer in copper and indium gallium film layer
Gallium element the problem of being unevenly distributed in layer is received, since selenium layer two sides are contacted with copper and indium gallium film layer in presoma lamination, selenizing is anti-
It should be carried out toward presoma two sides, so that the gradient of gallium is along the absorbed layer back side and absorbs layer surface both direction, to promote gallium first
The increase of element depth distribution and absorbed layer band gap width in CuInGaSe absorbed layer, and then improve opening for thin-film solar cells
Road voltage and photoelectric conversion efficiency.
Detailed description of the invention
The present invention will be further described with reference to the accompanying drawings and examples:
Fig. 1 is the structural schematic diagram of the utility model；
Fig. 2 is the schematic diagram of one copper and indium gallium film layer of the utility model embodiment；
Fig. 3 is the schematic diagram of two copper and indium gallium film layer of the utility model embodiment；
Fig. 4 is the schematic diagram of three copper and indium gallium film layer of the utility model embodiment.
Specific embodiment
Embodiment one
As shown in Figure 1, the utility model provides a kind of equally distributed copper-indium-galliun-selenium film solar cell suction of gallium element
Layer is received, including the base absorption layer that m group is mutually laminated, i.e. first group of base absorption layer, second group of base absorption layer ... m group base
Plinth absorbed layer, 2≤m≤5；Every group of base absorption layer includes the copper and indium gallium film layer A and selenium film layer B being laminated from the bottom to top.
As shown in connection with fig. 2, that include n group by copper gallium film layer 1 constituted the copper and indium gallium film layer A with the stacking of indium film layer 2 is compound
Film layer, 1≤n≤10.Stacking order from the bottom to top can for 1/ indium film layer of copper gallium film layer, 2/ bronze medal gallium film layer, 1/ indium film layer 2/ .../
1/ indium film layer 2 of copper gallium film layer, or 2/ 1/ indium film layer of bronze medal gallium film layer of indium film layer, 2/ bronze medal gallium film layer 1/ .../indium film layer, 2/ bronze medal
Gallium film layer 1.
Embodiment two
As shown in Figure 1, the utility model provides a kind of equally distributed copper-indium-galliun-selenium film solar cell suction of gallium element
Layer is received, including the base absorption layer that m group is mutually laminated, i.e. first group of base absorption layer, second group of base absorption layer ... m group base
Plinth absorbed layer, 2≤m≤5；Every group of base absorption layer includes the copper and indium gallium film layer A and selenium film layer B being laminated from the bottom to top.
As shown in connection with fig. 3, that include n group by copper and indium film layer 3 constituted the copper and indium gallium film layer A with the stacking of gallium film layer 4 is compound
Film layer, 1≤n≤10.Stacking order from the bottom to top can for 3/ gallium film layer of copper and indium film layer, 4/ copper and indium film layer, 3/ gallium film layer 4/ .../
3/ gallium film layer 4 of copper and indium film layer, or 4/ copper and indium film layer of gallium film layer, 3/ gallium film layer, 4/ copper and indium film layer 3/ .../4/ bronze medal of gallium film layer
Indium film layer 3.
Embodiment three
As shown in Figure 1, the utility model provides a kind of equally distributed copper-indium-galliun-selenium film solar cell suction of gallium element
Layer is received, including the base absorption layer that m group is mutually laminated, i.e. first group of base absorption layer, second group of base absorption layer ... m group base
Plinth absorbed layer, 2≤m≤5；Every group of base absorption layer includes the copper and indium gallium film layer A and selenium film layer B being laminated from the bottom to top.
As shown in connection with fig. 4, the copper and indium gallium film layer A includes that n group is answered by copper gallium film layer 1 with what the stacking of copper and indium film layer 3 was constituted
Close film layer, 1≤n≤10.Stacking order can be 1/ copper and indium film layer of copper gallium film layer, 3/ bronze medal gallium film layer, 1/ copper and indium film layer from the bottom to top
3/ .../copper gallium film layer, 1/ copper and indium film layer 3；It may be 3/ 1/ copper and indium film layer of bronze medal gallium film layer of copper and indium film layer, 3/ bronze medal gallium film layer
1/ .../copper and indium film layer, 3/ bronze medal gallium film layer 1.
The utility model can efficiently solve the problem of Ga is segregated in CIGS absorbed layer present in existing product, improve
The open-circuit voltage and photoelectric conversion efficiency of thin-film solar cells.
The above descriptions are merely preferred embodiments of the present invention, not makees in any form to the utility model
Limitation；Anyone skilled in the art, it is all available in the case where not departing from technical solutions of the utility model ambit
The methods and technical content of the disclosure above makes many possible changes and modifications to technical solutions of the utility model, or is revised as
The equivalent embodiment of equivalent variations.Therefore, all contents without departing from technical solutions of the utility model, according to the utility model
Technical spirit any simple modification, equivalent replacement, equivalence changes and modification made to the above embodiment are still fallen within practical
In the range of the protection of new technique scheme.
Claims (4)
1. a kind of equally distributed copper-indium-galliun-selenium film solar cell absorbed layer of gallium element, which is characterized in that including m group phase layer
Folded base absorption layer, every group of base absorption layer include the copper and indium gallium film layer and selenium film layer being laminated from the bottom to top, 2≤m≤5.
2. the equally distributed copper-indium-galliun-selenium film solar cell absorbed layer of a kind of gallium element according to claim 1,
It is characterized in that, the copper and indium gallium film layer includes the composite film that n group is made of copper gallium film layer and indium film stack, 1≤n≤10.
3. the equally distributed copper-indium-galliun-selenium film solar cell absorbed layer of a kind of gallium element according to claim 1,
It is characterized in that, the copper and indium gallium film layer includes the composite film that n group is made of copper and indium film layer and gallium film stack, 1≤n≤10.
4. the equally distributed copper-indium-galliun-selenium film solar cell absorbed layer of a kind of gallium element according to claim 1,
It is characterized in that, the composite film that the copper and indium gallium film layer includes n group to be made of copper gallium film layer and copper and indium film stack, 1≤n≤
10。
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920635526.5U CN209544363U (en) | 2019-05-06 | 2019-05-06 | A kind of equally distributed copper-indium-galliun-selenium film solar cell absorbed layer of gallium element |
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920635526.5U CN209544363U (en) | 2019-05-06 | 2019-05-06 | A kind of equally distributed copper-indium-galliun-selenium film solar cell absorbed layer of gallium element |
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| CN209544363U true CN209544363U (en) | 2019-10-25 |
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