CN209517080U - Compound multiplexer - Google Patents

Abstract

The utility model provide one kind even if in the case where having sought high frequency good compound multiplexer isolation characteristic.The compound multiplexer has the first terminal connecting with antenna terminal and multiple Second terminals as input and output terminal, the compound multiplexer is characterized in that, have: the first multiplexer, multiple bandpass-type filter circuits for connecting with one end with the first terminal and multiple first lc circuits for being connected to the multiple bandpass-type filter circuit, each bandpass-type filter circuit are connected to the multiple Second terminal via each first lc circuit with the end of the first terminal opposite side；Second multiplexer, the multiple bandpass-type filter circuits being connect with the first terminal with one end, each bandpass-type filter circuit are connected to the multiple Second terminal with the end of the first terminal opposite side；And second lc circuit, it is connected between the first terminal and second multiplexer.

Description

Compound multiplexer

Technical field

The utility model relates to the compound multiplexers for mobile communicating equipment etc..

Background technique

In the 5G as next generation communication standard, the frequency band of 3GHz~6GHz is used.Therefore, it is filtered as bandpass-type Device is also required to the band logical mode filter utilized in this band.It discloses in patent document 1 and is used in such frequency band LC filter.

But, in LC filter, abruptness is simultaneously insufficient.Therefore, LC filter is not suitable in the communication standard of 5G Carrier wave polymerization multiplexer.

On the other hand, the abruptness of the filter characteristic of acoustic wave filter is excellent.Wherein, in the S0 mould that Lamb wave is utilized In the case where the acoustic wave filter of formula, it is particularly susceptible high frequency.For example, in acoustic wave filter described in Patent Document 2, Sound multilayer film and piezoelectric film are laminated on supporting substrates.It is the velocity of sound is about in the S0 mode for the Lamb wave that the piezoelectric film is propagated 6000m/ seconds such high speeds.Therefore, it even if used in 3GHz~6GHz frequency band, does not need to make electrode finger yet Gap between line width, electrode finger becomes so narrow.Therefore, the deviation even if will not generate production high frequency band when, resistance to electricity The problems such as decline of power.

Citation

Patent document

Patent document 1: Japanese Unexamined Patent Publication 2017-092546 bulletin

Patent document 2:WO2017/068827

It is well known, however, that generating filtering if the filter using the passband with 3GHz~6GHz frequency band constitutes multiplexer The insufficient such new problem of isolation characteristic between device.It is thought that because if frequency is got higher, by residual inductance, posting Become larger compared with influencing the situation low with frequency caused by raw capacitor.

Utility model content

The utility model project to be solved

It is good isolation characteristic even if in the case where having sought high frequency that the purpose of the utility model is to provide one kind Good compound multiplexer.

A technical solution to solve project

The utility model relates to compound multiplexer be defeated with the first terminal that connect with antenna terminal and as input The compound multiplexer of multiple Second terminals of terminal out, the compound multiplexer have: the first multiplexer, have one end with it is described The multiple bandpass-type filter circuits and be connected to the multiple of the multiple bandpass-type filter circuit that first terminal connects First lc circuit, each bandpass-type filter circuit with the end of the first terminal opposite side via each first LC Circuit is connected to the multiple Second terminal；Second multiplexer, the multiple bands being connect with one end with the first terminal Flow-through filter circuit, each bandpass-type filter circuit are connected to institute with the end of the first terminal opposite side State multiple Second terminals；And second lc circuit, it is connected between the first terminal and second multiplexer.

The utility model relates to compound multiplexer in, it is preferable that the multiple first lc circuit is formd for structure At the decaying pole of the passband of the bandpass-type filter circuit.In this case, it can effectively improve in the first multiplexer The abruptness of filter characteristic.

The utility model relates to compound multiplexer in, second lc circuit be make propagate signal phase delay 90 degree of 90 degree of delay circuits.In this case, phase can be made between the signal that the first multiplexer and the second multiplexer are propagated 90 degree of difference.

The utility model relates to compound multiplexer in, it is highly preferred that first lc circuit be make propagate signal 90 degree of phase delay of 90 degree of delay circuits.In this case, isolation characteristic can further be improved.

The utility model relates to compound multiplexer some specific mode in, the bandpass-type filter circuit by Acoustic wave filter is constituted.In this case, it can be easily implemented high frequency.

The utility model relates to compound multiplexer another specific mode in, first multiplexer and institute Stating the second multiplexer is respectively first duplexer and the second duplexer.

The utility model relates to compound multiplexer another specific mode in, one of first multiplexer One bandpass-type filter circuit of the bandpass-type filter circuit and second multiplexer is same frequency range Bandpass-type filter circuit, another described bandpass-type filter circuit of first multiplexer and second multiplexer Another described bandpass-type filter circuit be another same frequency range bandpass-type filter circuit.

Utility model effect

According to the utility model, it is capable of providing a kind of good isolation characteristic even if in the case where advancing high frequency Compound multiplexer.

Detailed description of the invention

Fig. 1 is the circuit diagram of the compound multiplexer of the first embodiment of the utility model.

Fig. 2 is the structure for showing the bandpass-type filter circuit of the first duplexer in compound multiplexer shown in FIG. 1 Circuit diagram.

Fig. 3 is the elasticity for illustrating to be formed in acoustic wave filter used in the compound multiplexer of first embodiment The front sectional view of wave resonator.

Fig. 4 A be show the first lc circuit, the second lc circuit an example circuit diagram, Fig. 4 B be show the first LC electricity Road, the second lc circuit other examples circuit diagram.

Fig. 5 A be show the first lc circuit, the second lc circuit another example circuit diagram, Fig. 5 B is to show the first LC Circuit, the second lc circuit another example circuit diagram.

Fig. 6 is the figure by characteristic for showing the Band77 of comparative example and embodiment.

Fig. 7 is the figure by characteristic for showing the Band79 of comparative example and embodiment.

Fig. 8 is to show isolation characteristic of the slave Band77 in comparative example and the compound multiplexer of embodiment to Band79 Figure.

Fig. 9 is the figure of the VSWR characteristic at the antenna terminal shown in comparative example and embodiment.

Figure 10 is the figure for showing the VSWR characteristic at the terminal of the side Band77 in comparative example and embodiment.

Figure 11 is the figure for showing the VSWR characteristic at the terminal of the side Band79 in comparative example and embodiment.

Figure 12 is the transmission state for illustrating the transmission signal of the Band77 in the compound multiplexer of first embodiment Circuit diagram.

Figure 13 is the transmission state for illustrating the reception signal of the Band79 in the compound multiplexer of first embodiment Circuit diagram.

Figure 14 is the circuit for illustrating the transmission state of the isolation signal in the compound multiplexer of first embodiment Figure.

Figure 15 is the circuit diagram for the compound multiplexer that second embodiment is related to.

Description of symbols

1: compound multiplexer, 2: antenna terminal, 3: first terminal, 4,5: Second terminal, 11: first duplexer, 12,13, 22,23: bandpass-type filter circuit, 14,15: the first lc circuits, 16: the second lc circuits, 21: the second duplexers, 31: elastic wave Resonator, 32: supporting substrates, 33: sound multilayer film, 33a, 33c, 33e: low acoustic impedance layer, 33b, 33d, 33f: high acoustic impedance layer, 34: piezoelectric board, 35:IDT electrode, 41,41A, 42,42A:LC circuit, 51: compound multiplexer, 61: the first multiplexers, 61a~ 61d: bandpass-type filter circuit, 62: the second multiplexers, 62a~62d: bandpass-type filter circuit, the 63a~63d: the one LC Circuit, C11, C12: capacitor, L1~L7, L11, L12: inductor, P1~P3, P11~P14: parallel arm resonator, S1~ S3, S11~S14: series arm resonator.

Specific embodiment

Hereinafter, being illustrated by referring to accompanying drawing to the specific embodiment of the utility model, thus clear originally practical It is novel.

In addition, it is necessary to, it is noted that this specification record each embodiment be illustrative embodiment, can Aliquot replacement or the combination of structure are carried out between different embodiments.

Fig. 1 is the circuit diagram for the compound multiplexer that the first embodiment of the utility model is related to.Compound multiplexer 1 has The first terminal 3 being connect with antenna terminal 2.In addition, compound multiplexer 1 has multiple Second terminals 4,5.Second terminal 4,5 is used Make input and output terminal.The first duplexer 11 as the first multiplexer is connected in first terminal 3.First terminal 3 via Second lc circuit 16 is connected with the second duplexer 21 as the second multiplexer.

Compound multiplexer 1 uses in the Band77 and Band79 for being used in 5G.The communication band of Band77 is The communication band of 3300MHz~4200MHz, Band79 are 4400MHz~5000MHz.Compound multiplexer 1 is in carrier wave polymerization The compound multiplexer used, therefore, first duplexer 11, the second duplexer 21 each one end be commonly connected to first terminal 3.This Outside, Second terminal 4 is used as the input and output terminal of Band77.Second terminal 5 is used as the input and output terminal of Band79.

In addition, the compound multiplexer of the utility model is not limited to the combination of Band77 and Band79, can be applied to Various Band (frequency range) combination with one another.

First duplexer 11 has multiple bandpass-type filter circuits 12,13.Bandpass-type filter circuit 12 is Band77 Bandpass-type filter circuit, bandpass-type filter circuit 13 are the bandpass-type filter circuits of Band79.Multiple band logicals One end of mode filter circuit 12,13 is commonly connected to first terminal 3 each other.In first duplexer 11, filtered in bandpass-type The first lc circuit 14 is connected between device circuit 12 and Second terminal 4.First lc circuit 14 and bandpass-type filter circuit 12 1 Act the passband for forming Band77.In particular, forming decaying pole by the first lc circuit 14, the abruptness of the passband of Band77 is mentioned It is high.

Similarly, the first lc circuit 15 is connected between bandpass-type filter circuit 13 and Second terminal 5.First LC electricity Road 15 forms decaying pole.Therefore, by bandpass-type filter circuit 13 and the first lc circuit 15, passband in Band79 it is precipitous Property improve.

As described above, in first duplexer 11, multiple bandpass-type filter circuits 12,13 be connected to first terminal The end of 3 side opposite side is separately connected via the first lc circuit 14,15 and multiple Second terminals 4,5 respectively.

In addition, in the present embodiment, the first lc circuit 14 also has the function of making 90 degree of phase delay.First lc circuit 15 similarly, makes 90 degree of phase delay of the signal propagated.

Second duplexer 21 has multiple bandpass-type filter circuits 22,23.Bandpass-type filter circuit 22 is Band77 Bandpass-type filter circuit.Bandpass-type filter circuit 23 is the bandpass-type filter circuit of Band79.Bandpass-type filter One end of wave device circuit 22 and bandpass-type filter circuit 23 is commonly connected to first terminal via the second lc circuit 16 each other 3.Bandpass-type filter circuit 22 with the end of the side opposite side that is connected to first terminal 3 and the Second terminal of Band77 4 connections.Bandpass-type filter circuit 23 with the end of the side opposite side that is connected to first terminal 3 with as Band79's The Second terminal 5 for receiving and dispatching terminal connects.

Second lc circuit 16 is configured to 90 degree of phase delay of the signal for making to propagate.That is, the second lc circuit 16 and the first LC Circuit 14,15 is 90 degree of delay circuits similarly.

In compound multiplexer 1 because constituting as described above, can effectively improve Band77 and Band79 it Between isolation characteristic.About the effect, enumerates embodiment and be illustrated in further detail below.

Fig. 2 is the circuit for illustrating the bandpass-type filter circuit 12,13 of the first duplexer 11 in compound multiplexer 1 The circuit diagram of structure.Bandpass-type filter circuit 22,23 in second duplexer also has same circuit structure.

In addition, illustrating the first lc circuit of ratio 14,15 in first duplexer 11 more by 3 side of first terminal in Fig. 2 Part, the first lc circuit 14,15 not shown.

As shown in Fig. 2, one end of bandpass-type filter circuit 12 and bandpass-type filter circuit 13 connects jointly each other In first terminal 3.The inductor L1 of impedance matching is connected between first terminal 3 and earthing potential.

Bandpass-type filter circuit 12 and bandpass-type filter circuit 13 are ladder type filters.In band logical mode filter electricity In road 12, multiple series arm resonator S1~S3 and multiple parallel arm resonator P1~P3 are connected as constituting ladder type circuit.

Inductor L4 is connected between parallel arm resonator P1 and earthing potential.In parallel arm resonator P1 and inductor Inductor L2 is connected between tie point and series arm between L4.

In addition, being connected with inductor L3 between tie point and earthing potential between series arm resonator S2, S3.Parallel arm Each one end of resonator P2, P3 are connected jointly, and are connect via inductor L5 with earthing potential.

In bandpass-type filter circuit 13, multiple series arm resonator S11~S14 and multiple parallel arm resonator P11 ~P14 is connected as constituting ladder type circuit.One end of parallel arm resonator P11, P12 is connected jointly each other, and and earthing potential Connection.One end of parallel arm resonator P13, P14 is also connected jointly each other, and is connect with earthing potential.In addition, in series arm Resonator S11's is connected with inductor L6 with 3 opposite side of first terminal.In being connected jointly for parallel arm resonator P11, P12 Part and earthing potential between be connected with inductor L7.

In bandpass-type filter circuit 12, inductor L2 and inductor L3 outside passband in order to form decaying pole and company It connects.Inductor L4 and inductor L5 is in order to expand between the frequency between the resonance frequency of parallel arm resonator and anti-resonance frequency Every and connect.

In bandpass-type filter circuit 13, inductor L6 is for the impedance matching with Second terminal 5 shown in FIG. 1 And it connects.Inductor L7 connects to form decaying pole outside passband.

In addition, the bandpass-type filter circuit 22 and bandpass-type filter circuit 23 of the second duplexer 21 also with above-mentioned band Flow-through filter circuit 12 and bandpass-type filter circuit 13 are similarly constituted.

Back to Fig. 1, in compound multiplexer, in order to be further formed decaying pole outside frequency band, and filtered in bandpass-type Device circuit 12 is connected with the first lc circuit 14, is connected with the first lc circuit 15 in bandpass-type filter circuit 13.Filter as a result, The abruptness of characteristic further improves.

Series arm resonator S1~S3 shown in Fig. 2, parallel arm resonator P1~P3, series arm resonator S11~S14 with And parallel arm resonator P11~P14 is made of elastic wave resonator.Therefore, bandpass-type filter circuit 12 and bandpass-type Filter circuit 13, bandpass-type filter circuit 22 and bandpass-type filter circuit 23 are the acoustic wave filter electricity of ladder type Road.

Fig. 3 is the front sectional view for showing an example of above-mentioned elastic wave resonator.Elastic wave resonator 31 has branch Hold substrate 32.Sound multilayer film 33 is laminated on supporting substrates 32.Piezoelectric board 34 is laminated on sound multilayer film 33.In piezoelectric board IDT electrode 35 is provided on 34.Reflector is configured in the elastic wave propagation direction two sides of IDT electrode 35.In addition, it is anti-to omit this The diagram of emitter.

Supporting substrates 32 are appropriate by piezo-electric materials such as the semiconductor materials such as silicon, silicon oxynitride, silicon nitride or aluminium oxide etc. Material constitute.

Sound multilayer film 33 has low acoustic impedance layer 33a, 33c, 33e and high acoustic impedance layer 33b, 33d, 33f.Low acoustic impedance layer 33a, 33c, 33e and high acoustic impedance layer 33b, 33d, 33f are alternately laminated.The acoustic impedance ratio of low acoustic impedance layer 33a, 33c, 33e The acoustic impedance of high acoustic impedance layer 33b, 33d, 33f are low.As long as meeting the relationship of the height of above-mentioned acoustic impedance, it will be able to using appropriate Material as low acoustic impedance layer 33a, 33c, 33e and the material of high acoustic impedance layer 33b, 33d, 33f.As such material Example, can enumerate the semiconductor materials such as the insulating materials such as silica, silicon oxynitride, silicon nitride, aluminium oxide, silicon or Al, The metals such as Pt, AlCu alloy.

Piezoelectric board 34 is by LiTaO₃、LiNbO₃It is constituted etc. piezoelectric material appropriate.About IDT electrode 35, also by gold appropriate Belong to or alloy is constituted.In addition it is also possible to form IDT electrode 35 by laminated metal film.

In compound multiplexer 1, bandpass-type filter circuit 12,13 and band are constituted using multiple elastic wave resonators 31 Flow-through filter circuit 22,23.Therefore, high frequency can easily be sought ands using Lamb wave S0 mode etc..

Back to Fig. 1, the first lc circuit 14,15 and the second lc circuit 16, which have, connects inductor L with capacitor C Circuit structure.Fig. 4 A is the circuit diagram of an example of such lc circuit, and Fig. 5 A is the circuit diagram for showing other examples.

In the lc circuit 41 shown in Fig. 4 A, it is connected with inductor L11, L11 in the transmission path for being connected to output end, That is, the series arm in ladder type filter has been connected in series inductor L11, L11, connect between the transmission path and earthing potential It is connected to capacitor C11.

Lc circuit 41A shown in Fig. 4 B is used alternatively, it is also possible to replace lc circuit 41 shown in Fig. 4 A.

On the contrary, being connected with capacitor C12, C12 in the path of transmission signal in the lc circuit 42 shown in Fig. 5 A.At this It transmits and is connected with inductor L12 between the path and earthing potential of signal.

Lc circuit 42A shown in Fig. 5 B is used alternatively, it is also possible to replace lc circuit 42 shown in Fig. 5 A.

The 14,15, second lc circuit 16 of the first lc circuit above-mentioned is made of lc circuit 41 or lc circuit 42.

In compound multiplexer 1, transmit Band77 sends signal and the reception signal of Band79.In this case, Because being provided with above-mentioned first lc circuit, the second lc circuit 14~16, isolation characteristic can be effectively improved.By right Embodiment below and comparative example are illustrated, to keep it clear.

According to design parameter below, the bandpass-type of the first duplexer 11 in the embodiment of first embodiment has been made Filter circuit 12.

[table 1]

In addition, constituting bandpass-type filter circuit 13 according to design parameter shown in table 2 below.

[table 2]

In addition, the inductance value of inductor L1~L7 is set as shown in table 3 described as follows.

[table 3]

As the circuit structure in the first lc circuit, the second lc circuit, lc circuit 41 shown in Fig. 4 A has been used.Inductor The inductance value of L11 is set as 1.9nH, and the capacitor of capacitor C11 is set as 0.8pF.

In addition, the design parameter of the bandpass-type filter circuit 22,23 in the second duplexer 21 is also set as identical.

In order to compare, in addition to the first lc circuit, the second lc circuit 14~16 and not by first duplexer and second is not used Other than one end of duplexer is connected jointly each other, multiplexer circuit is constituted in the same manner as above embodiment.

In addition, in a comparative example, because first duplexer, the second duplexer are not connected in parallel, compared to the examples, The electrostatic capacitance of resonator is all set to 2 times, and inductance value is all set to 1/2 times.

What Fig. 6 showed the transmission signal in Band77 passes through characteristic.What Fig. 7 showed the reception signal of Band79 passes through spy Property.In addition, Fig. 8 is the figure for showing the isolation characteristic from Band77 to the side Band79.Fig. 9 is the VSWR shown at antenna terminal The figure of characteristic, Figure 10 are the figures for showing the VSWR characteristic at the terminal of the side Band77, and Figure 11 is shown at the terminal of the side Band79 VSWR characteristic figure.

In Fig. 6~Figure 11, solid line show embodiment as a result, dotted line shows the result of comparative example.

As shown in Figure 8, it is known that isolation characteristic is effectively improved according to embodiment relative to comparative example.That is, Isolation in Band77 frequency band is 48.6dB in a comparative example, in contrast, improving in embodiment is 52.2dB.? It is in a comparative example 52.4dB in Band79 frequency band, in contrast, improving in embodiment is 54.2dB.

In addition, be clear that according to Fig. 6 and Fig. 7, in any frequency band in Band77 and Band79, relative to than Compared with example, also it is enhanced according to embodiment about by characteristic.In turn, as shown in Fig. 9~Figure 11, it is known that relative to comparative example, root It is also enhanced according to embodiment VSWR characteristic.

As noted above it is believed that as follows the reasons why isolation characteristic is enhanced in embodiment relative to comparative example.

Figure 12 is to show the transmission that Band77 is transmitted from the Second terminal 4 as Band77 side terminal to 3 side of first terminal The figure of the state of signal.As shown in arrow A1, in 11 side of first duplexer, signal is sent via the first lc circuit 14 and band Flow-through filter circuit 12 is transferred to first terminal 3.In this case, the phase of signal is sent by the first lc circuit 14 delay 90 Degree.

On the other hand, as shown in arrow A2, the signal that sends of Band77 is filtered via the bandpass-type of the second duplexer 21 Device circuit 22 and the second lc circuit 16 are transferred to first terminal 3.In this case, the phase of the signal of transmission is in the 2nd LC electricity 90 degree are delayed by road 16.Therefore, at first terminal 3, the transmission signal of the both sides shown in arrow A1 and arrow A2 Phase becomes consistent.Therefore, it will not cancel out each other and be synthesized in the signal that two transmission paths are propagated through, be output to first Terminal 3, and it is output to antenna terminal 2.

As shown in figure 13, the reception signal of Band79 is transferred to the second end of the terminal as Band79 from first terminal 3 Son 5.In this case, it in the transmission path shown in arrow B1, receives signal and is filtered by the bandpass-type of first duplexer 11 Wave device circuit 13 and the first lc circuit 15.Therefore, the phase for receiving signal is delayed by 90 degree.On the other hand, with arrow In transmission path shown in B2, Second terminal 5 is transferred to via the second lc circuit 16 and bandpass-type filter circuit 23.At this In the case of, the phase of signal also postpones 90 degree by the second lc circuit 16.Therefore, at Second terminal 5, by being shown with arrow B1 Transmission path and the phase of signal that comes of the transmission path shown in arrow B2 become consistent.Therefore, letter is received Number it will not cancel out each other and be synthesized.

On the other hand, as shown in figure 14, the second end about Second terminal 4 and the side Band79 as Band77 side terminal Isolation between son 5 leaks into the signal of 5 side of Second terminal from Second terminal 4 by the path shown in arrow C1, C2 Pass through the first lc circuit 14 and the first lc circuit 15.Therefore, phase is delayed by 180 degree.In contrast, about by using arrow Transmission path shown in D1, D2 leaks the signal to come, and the phase of the signal is not delayed.Therefore, in Second terminal 5, It the phase of the signal transmitted in path shown in arrow C1, C2 and is transmitted in the transmission path shown in arrow D1, D2 The phase of the signal to come over becomes to differ 180 degree.Therefore, the signal of the two is cancelled out each other, and can improve isolation characteristic.

For the above reasons, in the above-described embodiments, the biography between Second terminal 4 and first terminal 3 can not made In the case where transmission characteristic deterioration between defeated characteristic and Second terminal 5 and first terminal 3, effectively improve Band77's Isolation characteristic between Second terminal 4 and the Second terminal of Band79 5.

In addition, though first duplexer 11, the second duplexer 21 are common in the compound multiplexer 1 of first embodiment It is connected to first terminal 3, but can also be as the compound multiplexer 51 of second embodiment shown in figure 15, the first multiplexing Device 61 and the second multiplexer 62 are respectively that there are four the four work devices of bandpass-type filter circuit 61a~61d, 62a~62d for tool. In this case, in the first multiplexer 61, at the end with 3 opposite side of first terminal of bandpass-type filter circuit 61a~61d Portion is separately connected first lc circuit 63a~63d.In addition, the second lc circuit 16 be connected to the second multiplexer 62 and first terminal 3 it Between.Second multiplexer 62 is also four work devices as described above.

Like this, in the present invention, the first multiplexer, the second multiplexer are not limited to duplexer, are also possible to three There are five the multiplexers of above bandpass-type filter circuit for work device, four work devices or tool.In addition, by the band logical in multiplexer In the case that the number of mode filter circuit is set as N, in the first multiplexer, it is separately connected the first lc circuit in N number of filter, In turn, the second lc circuit 16 is connected between first terminal 3 and the second multiplexer.Therefore, in the first multiplexer and more than second In the case that the number of bandpass-type filter circuit in work device is N, N+1 lc circuit will use as a whole.

Claims (7)

1. a kind of compound multiplexer has the first terminal connecting with antenna terminal and as multiple the second of input and output terminal Terminal, the compound multiplexer are characterized in that having:

First multiplexer, the multiple bandpass-type filter circuits being connect with the first terminal with one end and is connected to institute State multiple first lc circuits of multiple bandpass-type filter circuits, each bandpass-type filter circuit with the first terminal The end of opposite side is connected to the multiple Second terminal via each first lc circuit；

Second multiplexer, with multiple bandpass-type filter circuits that one end is connect with the first terminal, each bandpass-type Filter circuit is connected to the multiple Second terminal with the end of the first terminal opposite side；And

Second lc circuit is connected between the first terminal and second multiplexer.

2. compound multiplexer according to claim 1, which is characterized in that

The multiple first lc circuit forms the decaying pole of the passband for constituting the bandpass-type filter circuit.

3. compound multiplexer according to claim 1 or 2, which is characterized in that

Second lc circuit is 90 degree of phase delay of 90 degree of delay circuits for making the signal propagated.

4. compound multiplexer according to claim 1 or 2, which is characterized in that

First lc circuit is 90 degree of phase delay of 90 degree of delay circuits for making the signal propagated.

5. compound multiplexer according to claim 1 or 2, which is characterized in that

The bandpass-type filter circuit is made of acoustic wave filter.

6. compound multiplexer according to claim 1 or 2, which is characterized in that

First multiplexer and second multiplexer are respectively first duplexer and the second duplexer.

7. compound multiplexer according to claim 6, which is characterized in that

One band logical of the bandpass-type filter circuit of one of first multiplexer and second multiplexer Mode filter circuit is the bandpass-type filter circuit of same frequency range, another described bandpass-type filtering of first multiplexer Another of device circuit and second multiplexer bandpass-type filter circuit are the bandpass-type of another same frequency range Filter circuit.