CN209515670U - Bent flexible display apparatus - Google Patents
Bent flexible display apparatus Download PDFInfo
- Publication number
- CN209515670U CN209515670U CN201920400477.7U CN201920400477U CN209515670U CN 209515670 U CN209515670 U CN 209515670U CN 201920400477 U CN201920400477 U CN 201920400477U CN 209515670 U CN209515670 U CN 209515670U
- Authority
- CN
- China
- Prior art keywords
- layer
- thin film
- film transistor
- display apparatus
- flexible display
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Expired - Fee Related
Links
Landscapes
- Electroluminescent Light Sources (AREA)
- Devices For Indicating Variable Information By Combining Individual Elements (AREA)
Abstract
The utility model relates to a kind of bent flexible display apparatus, which includes: flexible base board；Buffer layer is set on flexible base board；Thin film transistor device layer, is set on buffer layer, and thin film transistor device layer is equipped with multiple apertures for penetrating through opposite two surfaces；Flatness layer is set in thin film transistor device layer and multiple apertures；Organic light emitting diode device layer, is set on flatness layer；And encapsulated layer, it is set on organic light emitting diode device layer.A kind of mode of the utility model is by offering multiple apertures for penetrating through opposite two surfaces on thin film transistor device layer; so that when forming flatness layer; both it had been formed on thin film transistor device layer; it is also formed in multiple apertures; so that flatness layer is formed stereoscopic protection structure to thin film transistor device layer, prevents from locally bending excessive.
Description
Technical field
The utility model relates to a kind of flexible display apparatus, more particularly to a kind of bent flexible display apparatus.
Background technique
The flexible display apparatus of the prior art is usually to use polyimide resin (Polyimide, PI) as flexible base
Plate, the materials such as deposit polycrystalline silicon (poly), metal (metal) form device architecture on it, then the shape on device architecture again
At encapsulated layer, flexible display apparatus is ultimately formed, is please referred to shown in Fig. 9.
In the process of implementing the utility model, the inventor finds that the existing technology has at least the following problems:
In bending, after repeatedly bending, metal (metal) easily wrecks the flexible display apparatus of the prior art；Meanwhile it is more
Crystal silicon (poly) is relatively crisp, when bent flexible display apparatus bending angle is excessive, is also easy to lead to polysilicon (poly)
It wrecks.Therefore, it is badly in need of a kind of bent flexible display apparatus, to solve the flexible display apparatus of the prior art in material flexibility
Etc. existing for insufficient problem.
Utility model content
For solve the problems, such as the bent flexible display apparatus of the prior art in terms of existing for it is insufficient,
The utility model embodiment provides a kind of bent flexible display apparatus.Specific technical solution is as follows:
In a first aspect, a kind of bent flexible display apparatus, wherein bent flexible display apparatus includes:
Flexible base board；
Buffer layer is set on flexible base board；
Thin film transistor device layer, is set on buffer layer, and thin film transistor device layer is equipped with more
A aperture for penetrating through opposite two surfaces；
Flatness layer is set in thin film transistor device layer and multiple apertures；
Organic light emitting diode device layer, is set on flatness layer；And
Encapsulated layer is set on organic light emitting diode device layer.
In the first possible implementation of first aspect, buffer layer further include: silicon nitride layer is set to flexible base board
On；And silicon oxide layer, it is set on silicon nitride layer, device layer is set on silicon oxide layer.
In second of possible implementation of first aspect, thin film transistor device layer further include: polysilicon
Layer, is set on buffer layer；Gate insulating layer is set on polysilicon layer；The first metal layer is set on gate insulating layer；
Interlayer insulating film is set on the first metal layer；And second metal layer, it is set on interlayer insulating film, flatness layer is set to
In second metal layer；Wherein, multiple apertures penetrate through polysilicon layer, gate insulating layer, the first metal layer, interlayer insulating film and second
Metal layer.
Second aspect, a kind of bent flexible display apparatus, wherein bent flexible display apparatus includes:
Flexible base board；
Buffer layer is set on flexible base board；
Thin film transistor device layer, is set on buffer layer；
Flatness layer is set on thin film transistor device layer；
Organic light emitting diode device layer, is set on flatness layer；
Multiple apertures from top to bottom successively penetrate through organic light emitting diode device layer, flatness layer and thin film field-effect crystal
Tube device layer；And
Encapsulated layer is set on organic light emitting diode device layer and in multiple apertures.
In the first possible implementation of second aspect, buffer layer further include: silicon nitride layer is set to flexible base board
On；And silicon oxide layer, it is set on silicon nitride layer, device layer is set on silicon oxide layer.
In second of possible implementation of second aspect, thin film transistor device layer further include: polysilicon
Layer, is set on buffer layer；Gate insulating layer is set on polysilicon layer；The first metal layer is set on gate insulating layer；
Interlayer insulating film is set on the first metal layer；And second metal layer, it is set on interlayer insulating film, flatness layer is set to
In second metal layer；Wherein, multiple apertures penetrate through polysilicon layer, gate insulating layer, the first metal layer, interlayer insulating film and second
Metal layer.
The utility model has had the advantage that compared with prior art:
A kind of mode of the utility model is by offering multiple pass through on thin film transistor (TFT) device layer
The aperture on logical opposite two surfaces, so that being both formed in thin film transistor (TFT) device when forming flatness layer (PLN)
It on layer, is also formed in multiple apertures, flatness layer (PLN) is made to form three-dimensional guarantor to thin film transistor (TFT) device layer
Protection structure；In the bending of thin film transistor (TFT) device layer, flatness layer (PLN) can be thin film transistor
(TFT) device layer provides the rigid support of horizontal direction, prevents from locally bending excessive.
The another way of the utility model is by Organic Light Emitting Diode (OLED) device layer, flatness layer (PLN)
And multiple apertures successively penetrated through under are formed on thin film transistor (TFT) device layer, so that forming encapsulated layer
When, it had both been formed on Organic Light Emitting Diode (OLED) device layer, and had been also formed in multiple apertures, makes encapsulated layer to organic light emission
Diode (OLED) device layer, flatness layer (PLN) and thin film transistor (TFT) device layer form stereoscopic protection structure；
In the bending of bent flexible display apparatus, encapsulated layer can be Organic Light Emitting Diode (OLED) device layer, flatness layer (PLN)
And thin film transistor (TFT) device layer provides the rigid support of horizontal direction, prevents from locally bending excessive.
Two kinds of modes of the utility model need to only increase by a hole opening technology process on the basis of current technology, big without doing
Variation, it is high with current technology matching degree, the protection of the bending to bent flexible display apparatus, and feasibility can be realized
It is high.
Detailed description of the invention
It, below will be to required in embodiment description in order to illustrate more clearly of the technical scheme in the embodiment of the utility model
Attached drawing to be used is briefly described, it should be apparent that, the accompanying drawings in the following description is only some realities of the utility model
Example is applied, it for those of ordinary skill in the art, without creative efforts, can also be according to these attached drawings
Obtain other attached drawings.
Fig. 1 is a kind of structural schematic diagram of the bent flexible display apparatus of an embodiment of the present invention.
Fig. 2 is another structural schematic diagram of the bent flexible display apparatus of an embodiment of the present invention.
Fig. 3 is the step process signal of the production method of the bent flexible display apparatus of two embodiment of the utility model
Figure.
Fig. 4 is that the formation of the utility model two, four embodiments buffers the step flow diagram of (buffer) layer.
Fig. 5 be the utility model two, four embodiments thin film transistor (TFT) device layer step process signal
Figure.
Fig. 6 is a kind of structural schematic diagram of the bent flexible display apparatus of three embodiment of the utility model.
Fig. 7 is another structural schematic diagram of the bent flexible display apparatus of three embodiment of the utility model.
Fig. 8 is the step process signal of the production method of the bent flexible display apparatus of four embodiment of the utility model
Figure.
Fig. 9 is the structural schematic diagram of the bent flexible display apparatus of the prior art.
Specific embodiment
It is practical new to this below in conjunction with attached drawing to keep the purpose of this utility model, technical solution and advantage clearer
Type embodiment is described in further detail.
In one embodiment of the utility model, referring to FIG. 1, it illustrates the bent soft of an embodiment of the present invention
A kind of structural schematic diagram of property display device 1.Bent flexible display apparatus 1 include flexible base board 2, buffering (buffer) layer 3,
Thin film transistor (TFT) device layer 4, flatness layer (PLN) 5, Organic Light Emitting Diode (OLED) device layer 6 and encapsulated layer
7, in which:
Referring again to Fig. 1, flexible base board 2 is set to the lower section of bent flexible display apparatus 1, is mainly buffering
(buffer) layer 3, thin film transistor (TFT) device layer 4, flatness layer (PLN) 5, Organic Light Emitting Diode (OLED) device
Part layer 6 and encapsulated layer 7 provide support.The material of flexible base board 2 disclosed in the present embodiment be polyimide resin (Polyimide,
PI), but it is not limited thereto.The thickness of flexible base board 2 is preferably 50-250nm, but is not limited thereto.
Buffering (buffer) layer 3 is set on flexible base board 2, and buffering (buffer) layer 3 is for making thin film field-effect crystal
The combination for managing (TFT) device layer 4 and flexible base board 2 is more firm.The thickness for buffering (buffer) layer 3 is preferably 200-400nm, but
It is not limited thereto.
In order to be described further to above-mentioned bent flexible display apparatus 1 shown in FIG. 1, referring to FIG. 2, it illustrates
Another structural schematic diagram of the bent flexible display apparatus 1 of an embodiment of the present invention, the disclosed buffering of the present embodiment
(buffer) layer 3 further includes silicon nitride (SiN) layer 31 and silica (SiO) layer 32, and silicon nitride (SiN) layer 31 is set to flexible base
On plate 2, silica (SiO) layer 32 is set on silicon nitride (SiN) layer 31, and device layer 4 is set on silica (SiO) layer 32,
So the material and structure of buffering (buffer) layer 3 are not limited thereto, and those skilled in the art can also be according to actual device
Buffering (buffer) layer 3 for selecting other suitable materials and structure of layer 4.
Referring again to Fig. 1, thin film transistor (TFT) device layer 4 is set on buffering (buffer) layer 3, thin
Film field effect transistor (TFT) device layer 4 is equipped with multiple apertures 46 for penetrating through opposite two surfaces, and multiple apertures 46 are preferably placed at
The non-subpixel area of device layer 4, to prevent from influencing the illumination effect of device layer 4, as the size and spacing of multiple apertures 46
Design in the present invention can not have particular/special requirement, can refer to product (bent flexible display apparatus 1) design when institute
The bending angle needed is designed.The thickness of thin film transistor (TFT) device layer 4 is 5-15 μm, but not
As limit.
In thin film transistor (TFT) 4 bending of device layer, due to thin film transistor (TFT) device layer 4
46 position of aperture it is different from non-position of opening folding stress, can make non-position of opening folding stress that can all be released to aperture
In 46.
In a preferred embodiment, referring again to Fig. 2, thin film transistor (TFT) device layer 4 further includes polycrystalline
Silicon (Poly) layer 41, gate insulating layer 42, the first metal layer 43, layer insulation (ILD) layer 44 and second metal layer 45, polysilicon
(Poly) layer 41 is set on buffering (buffer) layer 3, and polysilicon (Poly) layer 41 passes through buffering (buffer) layer 3 and flexible base
Plate 2 formed it is firm combine, and etch component graphics in need on polysilicon (Poly) layer 41, in the present invention for
The component graphics can not have particular/special requirement, referring to the conventional selection of those skilled in the art.
Gate insulator (GI) layer 42 is set on polysilicon (Poly) layer 41, so that polysilicon (Poly) layer 41 and the first gold medal
Belong to layer 43 to insulate；The first metal layer 43 is set on gate insulator (GI) layer 42；Layer insulation (IDL) layer 44 is set to the first gold medal
Belong on layer 43, so that the first metal layer 43 and second metal layer 45 insulate；Second metal layer 45 is set to layer insulation (ILD) layer
On 44, multiple apertures 46 penetrate through polysilicon (Poly) layer 41, gate insulator (GI) layer 42, the first metal layer 43, layer insulation
(ILD) structure of layer 44 and second metal layer 45, right thin film transistor (TFT) device layer 4 is not limited thereto, ability
Field technique personnel according to the present utility model can also instruct thin film transistor (TFT) device for selecting other structures
Layer 4.
Referring again to Fig. 1,2, flatness layer (PLN) 5 is set on thin film transistor (TFT) device layer 4 and more
In a aperture 46, by the way that flatness layer (PLN) 5 to be arranged in (deposition) Yu Kaikong 46, lower end connects with buffering (buffer) layer 3
Touching, upper end are set on thin film transistor (TFT) device layer 4, make 5 pairs of thin film transistor of flatness layer (PLN)
(TFT) device layer 4 forms stereoscopic protection structure.The thickness of flatness layer (PLN) 5 is preferably 1-3 μm, but is not limited thereto.
When thin film transistor (TFT) device layer 4 is bent, flatness layer (PLN) 5 can be thin film field-effect crystal
It manages (TFT) device layer 4 and the rigid support of horizontal direction is provided, prevent from locally bending excessive.Meanwhile passing through flatness layer (PLN) 46
Preferable film layer covering power, so that thin film transistor (TFT) device layer 4 is formed preferable flatness, with facilitate into
The production of row follow-up process.
Referring again to Fig. 1,2, Organic Light Emitting Diode (OLED) device layer 6 is set on flatness layer (PLN) 5, organic
The thickness of light emitting diode (OLED) device layer 6 is preferably 250-300 μm, but is not limited thereto.It is right in the present invention
Can there is no particular/special requirement in the selection of the structure of Organic Light Emitting Diode (OLED) device layer 6 and set-up mode, referring to ability
The conventional selection of field technique personnel.
Referring again to Fig. 1,2, encapsulated layer 7 is set on Organic Light Emitting Diode (OLED) device layer 6, and encapsulated layer 7 is excellent
The covering of choosing and fully wrapped around Organic Light Emitting Diode (OLED) device layer 6, to reach more preferably packaging effect, but not with this
It is limited.The thickness of encapsulated layer 7 is preferably 5-15 μm, but is not limited thereto.In the present invention for the selection of encapsulated layer 6
Can there is no particular/special requirement, referring to the conventional selection of those skilled in the art.
In two embodiments of the utility model, referring to FIG. 3, it illustrates the bent soft of two embodiment of the utility model
The step flow diagram of the production method 8 of property display device 1.The production method 8 of bent flexible display apparatus 1 includes following
Step 801-807, in which:
Step 801: forming flexible base board 2.
Specifically, on the glass substrate by polyimide resin (Polyimide, PI) coating, being formed soft by rubbing method
Property substrate 2, after the subsequent step for the bent flexible display apparatus 1 that completes, then through laser irradiation, separation of glasses substrate
It is not limited thereto with the generation type of flexible base board 2, right flexible base board 2, those skilled in the art can also be practical according to this
Novel introduction selects other suitable generation types.
Step 802: buffering (buffer) layer 3 in being formed on flexible base board 2.
In a preferred embodiment, in order to which the production method 8 to above-mentioned bent flexible display apparatus 1 shown in Fig. 3 is done
It further describes, referring to FIG. 4, the step of it illustrates the formation of two embodiment of the utility model buffers layer 3 (buffer) is flowed
Journey schematic diagram.The step 9 for forming buffering (buffer) layer 3 further includes step 901-902, in which:
Step 901: in formation silicon nitride (SiN) layer 31 on flexible base board 2.
Specifically, silicon nitride (SiN) is deposited on flexible base board 2 by sedimentation, silicon nitride (SiN) layer 31 is formed,
But it is not limited thereto.
Step 902: in formation silica (SiO) layer 32 on silicon nitride (SiN) layer 31.
Specifically, silica (SiO) is deposited on silicon nitride (SiN) layer 31 by sedimentation, silica is formed
(SiO) layer 32, but be not limited thereto.
Step 803: in formation thin film transistor (TFT) device layer 4 on buffering (buffer) layer 3.
In a preferred embodiment, in order to which the production method 8 to above-mentioned bent flexible display apparatus 1 shown in Fig. 3 is done
It further describes, referring to FIG. 5, it illustrates formation thin film transistor (TFT) devices of two embodiment of the utility model
The step flow diagram of part layer 4.The step 10 for forming thin film transistor (TFT) device layer 4 further includes step 101-
Step 105, in which:
Step 101: in formation polysilicon (Poly) layer 41 on buffering (buffer) layer 3, and in polysilicon (Poly) layer 41
On etch the component graphics of needs.
Specifically, polysilicon (Poly) is deposited on silica (SiO) layer 32 by sedimentation, polysilicon is formed
(Poly) layer 41, the component graphics of needs are etched using light shield, but are not limited thereto.
Step 102: in formation gate insulator (GI) layer 42 on polysilicon (Poly) layer 41.
Specifically, in being sequentially depositing SiO, SiN on silica (SiO) layer 32, being formed gate insulator (GI) by sedimentation
Layer 42, but be not limited thereto.
Step 103: in formation the first metal layer 43 on gate insulator (GI) layer 42.
Specifically, metal (Metal) is deposited on gate insulator (GI) layer 42 by sedimentation, the first metal is formed
Layer 43, but be not limited thereto.
Step 104: in formation layer insulation (ILD) layer 44 on the first metal layer 43.
Specifically, layer insulation (ILD) layer 44 is made on the first metal layer 43, so that the first metal layer 43 and the second gold medal
Belong to layer 45 to insulate.
Step 105: in formation second metal layer 45 on layer insulation (ILD) layer 44.
Specifically, metal (Metal) is deposited on layer insulation (ILD) layer 44 by sedimentation, the second metal is formed
Layer 45, but be not limited thereto.
Step 804: in the apertures for forming opposite two surfaces of multiple perforations on thin film transistor (TFT) device layer 4
46。
Specifically, passing through the upper surface of laser irradiation thin film transistor (TFT) device layer 4, film is passed through
The lower surface of field effect transistor (TFT) device layer 4 forms multiple apertures 46 for penetrating through opposite two surfaces.In the utility model
Required bending angle is designed when the size of middle aperture 46 and the spacing of adjacent two apertures 46 are referring to product design, but simultaneously
It is not limited.
Step 805: on thin film transistor (TFT) device layer 4 and aperture 46 in formed flatness layer (PLN) 5.
Specifically, by sedimentation, the material of flatness layer (PLN) 46 is deposited in aperture 46 and thin film field-effect crystal
It manages on (TFT) device layer 4, forms thin film transistor (TFT) device layer 4.
Step 806: in formation Organic Light Emitting Diode (OLED) device layer 6 on flatness layer (PLN) 5.
Specifically, the material of Organic Light Emitting Diode (OLED) device is successively deposited in flatness layer by vapour deposition method
(PLN) on 46, Organic Light Emitting Diode (OLED) device layer 6, but be not limited thereto.
Step 807: in formation encapsulated layer 7 on Organic Light Emitting Diode (OLED) device layer 6.
Specifically, making encapsulated layer 7 on Organic Light Emitting Diode (OLED) device layer 6 by sedimentation, preferably making
Its cover and fully wrapped around Organic Light Emitting Diode (OLED) device layer 6, to reach more preferably packaging effect, but not as
Limit.
The production method 8 of the above-mentioned bent flexible display apparatus 1 of the utility model is increased on the basis of current technology
Add a hole opening technology process, so that being both formed in thin film transistor (TFT) device layer when forming flatness layer (PLN) 5
It on 4, is also formed in multiple apertures 46,5 pairs of thin film transistor (TFT) device layers 4 of flatness layer (PLN) is made to form solid
Protect structure.
When thin film transistor (TFT) device layer 4 is bent, flatness layer (PLN) 5 can be thin film field-effect crystal
It manages (TFT) device layer 4 and the rigid support of horizontal direction is provided, prevent from locally bending excessive；And due to the utility model can
The production method 8 of bending flexible display apparatus 1 only increases by a hole opening technology process on the basis of current technology, big without doing
Variation, high with current technology matching degree, feasibility is high.
In three embodiments of the utility model, referring to FIG. 6, it illustrates the bent soft of an embodiment of the present invention
A kind of structural schematic diagram of property display device 1.Bent flexible display apparatus 1 include flexible base board 2, buffering (buffer) layer 3,
Thin film transistor (TFT) device layer 4, flatness layer (PLN) 5, Organic Light Emitting Diode (OLED) device layer 6 and encapsulated layer
7, in which:
Referring again to Fig. 6, flexible base board 2 is set to the lower section of bent flexible display apparatus 1, is mainly buffering
(buffer) layer 3, thin film transistor (TFT) device layer 4, flatness layer (PLN) 5, Organic Light Emitting Diode (OLED) device
Part layer 6 and encapsulated layer 7 provide support.The material of flexible base board 2 disclosed in the present embodiment be polyimide resin (Polyimide,
PI), but it is not limited thereto.
Referring again to Fig. 6, buffers (buffer) layer 3 and be set on flexible base board 2, buffering (buffer) layer 3 is for making
The combination of thin film transistor (TFT) device layer 4 and flexible base board 2 is more firm.In order to above-mentioned shown in fig. 6 bent
Flexible display apparatus 1 is described further, referring to FIG. 7, it illustrates the bent flexible aobvious of three embodiment of the utility model
Another structural schematic diagram of showing device 1, disclosed buffering (buffer) layer 3 of the present embodiment further includes silicon nitride (SiN) layer 31
With silica (SiO) layer 32, silicon nitride (SiN) layer 31 is set on flexible base board 2, and silica (SiO) layer 32 is set to nitridation
On silicon (SiN) layer 31, device layer 4 is set on silica (SiO) layer 32, and the material and structure for so buffering (buffer) layer 3 are simultaneously
Not limited to this, those skilled in the art can also select other suitable materials and structure according to actual device layer 4
Buffer (buffer) layer 3.
Referring again to Fig. 6, thin film transistor (TFT) device layer 4 is set on buffering (buffer) layer 3, is asked
Referring again to FIGS. 7, thin film transistor disclosed in the present embodiment (TFT) device layer 4 further include polysilicon (Poly) layer 41,
Gate insulating layer 42, the first metal layer 43, layer insulation (ILD) layer 44 and second metal layer 45, polysilicon (Poly) layer 41 are set
It is placed on buffering (buffer) layer 3, polysilicon (Poly) layer 41 is formed firm by buffering (buffer) layer 3 and flexible base board 2
In conjunction with, and component graphics in need are etched on polysilicon (Poly) layer 41, in the present invention for the component graphics
Can there is no particular/special requirement, referring to the conventional selection of those skilled in the art.
Gate insulator (GI) layer 42 is set on polysilicon (Poly) layer 41, so that polysilicon (Poly) layer 41 and the first gold medal
Belong to layer 43 to insulate；The first metal layer 43 is set on gate insulator (GI) layer 42；Layer insulation (IDL) layer 44 is set to the first gold medal
Belong on layer 43, so that the first metal layer 43 and second metal layer 45 insulate；Second metal layer 45 is set to layer insulation (ILD) layer
On 44, multiple apertures 46 penetrate through polysilicon layer, gate insulating layer, the first metal layer, interlayer insulating film and second metal layer, so thin
The structure of film field effect transistor (TFT) device layer 4 is not limited thereto, and those skilled in the art can also be practical new according to this
The introduction of type selects the device layer 4 of other structures.
Flatness layer (PLN) 5 is set on thin film transistor (TFT) device layer 4, passes through flatness layer (PLN) 46
Preferable film layer covering power, makes thin film transistor (TFT) device layer 4 form preferable flatness, is carried out with facilitating
Subsequent encapsulation.
Organic Light Emitting Diode (OLED) device layer 6 is set on flatness layer (PLN) 5, in the present invention for having
The selection of the structure of machine light emitting diode (OLED) device layer 6 and set-up mode can not have particular/special requirement, referring to this field skill
The conventional selection of art personnel.
Referring again to Fig. 6,7, multiple apertures 46 from top to bottom successively penetrate through Organic Light Emitting Diode (OLED) device layer
6, flatness layer (PLN) 5 and thin film transistor (TFT) device layer 4, multiple apertures 46 are preferably placed at bent Flexible Displays
The non-subpixel area of device 1, to prevent the illumination effect of bent flexible display apparatus 1, as the size of multiple apertures 46
And the design of spacing can not have particular/special requirement in the present invention, can refer to product (bent flexible display apparatus 1) and set
Bending angle needed for timing is designed.
In bent 1 bending of flexible display apparatus, due to Organic Light Emitting Diode (OLED) device layer 6, flatness layer
(PLN) 5 and thin film transistor (TFT) device layer 4 46 position of aperture it is different from non-position of opening folding stress, can be with
Be released to non-position of opening folding stress can all in aperture 46.
Referring again to Fig. 6,7, encapsulated layer 7 is set on Organic Light Emitting Diode (OLED) device layer 6 and multiple apertures
In 46, the application by by encapsulated layer 7 be arranged (deposition) Yu Kaikong 46 in, lower end with buffer (buffer) layer 3 contact, upper end
It is set on Organic Light Emitting Diode (OLED) device layer 6, makes encapsulated layer 7 to Organic Light Emitting Diode (OLED) device layer 6, puts down
Smooth layer (PLN) 5 and thin film transistor (TFT) device layer 4 form stereoscopic protection structure.
Bent flexible display apparatus 1 bending when, encapsulated layer 7 can for Organic Light Emitting Diode (OLED) device layer 6,
Flatness layer (PLN) 5 and thin film transistor (TFT) device layer 4 provide the rigid support of horizontal direction, prevent from locally bending
It is excessive.Encapsulated layer 7 preferably covers and fully wrapped around Organic Light Emitting Diode (OLED) device layer 6, is more preferably encapsulated with reaching
Effect, but be not limited thereto.Can there is no particular/special requirement for the selection of encapsulated layer 6 in the present invention, referring to ability
The conventional selection of field technique personnel.
In four embodiments of the utility model, referring to FIG. 8, it illustrates the bent soft of four embodiment of the utility model
The step flow diagram of the production method 8 of property display device 1.The production method 8 of bent flexible display apparatus 1 includes following
Step 801-807, in which:
Step 801: forming flexible base board 2.
Specifically, on the glass substrate by polyimide resin (Polyimide, PI) coating, being formed soft by rubbing method
Property substrate 2, after the subsequent step for the bent flexible display apparatus 1 that completes, then through laser irradiation, separation of glasses substrate
It is not limited thereto with the generation type of flexible base board 2, right flexible base board 2, those skilled in the art can also be practical according to this
Novel introduction selects other suitable generation types.
Step 802: buffering (buffer) layer 3 in being formed on flexible base board 2.
In a preferred embodiment, to the production method 8 of above-mentioned bent flexible display apparatus 1 shown in Fig. 8 do into
One step description, referring to FIG. 4, it illustrates the step processes of the formation of four embodiment of the utility model buffering (buffer) layer 3
Schematic diagram.The step 9 for forming buffering (buffer) layer 3 further includes step 901-902, in which:
Step 901: in formation silicon nitride (SiN) layer 31 on flexible base board 2.
Specifically, silicon nitride (SiN) is deposited on flexible base board 2 by sedimentation, silicon nitride (SiN) layer 31 is formed,
But it is not limited thereto.
Step 902: in formation silica (SiO) layer 32 on silicon nitride (SiN) layer 31.
Specifically, silica (SiO) is deposited on silicon nitride (SiN) layer 31 by sedimentation, silica is formed
(SiO) layer 32, but be not limited thereto.
Step 803: in formation thin film transistor (TFT) device layer 4 on buffering (buffer) layer 3.
In a preferred embodiment, in order to which the production method 8 to above-mentioned bent flexible display apparatus 1 shown in Fig. 8 is done
It further describes, referring to FIG. 5, it illustrates formation thin film transistor (TFT) devices of four embodiment of the utility model
The step flow diagram of part layer 4.The step 10 for forming thin film transistor (TFT) device layer 4 further includes step 101-
Step 105, in which:
Step 101: in formation polysilicon (Poly) layer 41 on buffering (buffer) layer 3, and in polysilicon (Poly) layer 41
On etch the component graphics of needs.
Specifically, polysilicon (Poly) is deposited on silica (SiO) layer 32 by sedimentation, polysilicon is formed
(Poly) layer 41, the component graphics of needs are etched using light shield, but are not limited thereto.
Step 102: in formation gate insulator (GI) layer 42 on polysilicon (Poly) layer 41.
Specifically, in being sequentially depositing SiO, SiN on silica (SiO) layer 32, being formed gate insulator (GI) by sedimentation
Layer 42, but be not limited thereto.
Step 103: in formation the first metal layer 43 on gate insulator (GI) layer 42.
Specifically, metal (Metal) is deposited on gate insulator (GI) layer 42 by sedimentation, the first metal is formed
Layer 43, but be not limited thereto.
Step 104: in formation layer insulation (ILD) layer 44 on the first metal layer 43.
Specifically, layer insulation (ILD) layer 44 is made on the first metal layer 43, so that the first metal layer 43 and the second gold medal
Belong to layer 45 to insulate.
Step 105: in formation second metal layer 45 on layer insulation (ILD) layer 44.
Specifically, metal (Metal) is deposited on layer insulation (ILD) layer 44 by sedimentation, the second metal is formed
Layer 45, but be not limited thereto.
Step 804: in formation flatness layer (PLN) 5 on thin film transistor (TFT) device layer 4.
Specifically, the material of flatness layer (PLN) 46 is deposited on thin film transistor (TFT) device by sedimentation
On part layer 4, thin film transistor (TFT) device layer 4 is formed.
Step 805: in formation Organic Light Emitting Diode (OLED) device layer 6 on flatness layer (PLN) 5.
Specifically, the material of Organic Light Emitting Diode (OLED) device is successively deposited in flatness layer by vapour deposition method
(PLN) on 46, Organic Light Emitting Diode (OLED) device layer 6, but be not limited thereto.
Step 806: being formed and from top to bottom successively penetrate through Organic Light Emitting Diode (OLED) device layer 6, flatness layer (PLN) 5
And multiple apertures 46 of thin film transistor (TFT) device layer 4.
Specifically, being to sequentially pass through it by the upper surface of laser irradiation Organic Light Emitting Diode (OLED) device layer 6
The following table of Organic Light Emitting Diode (OLED) device layer 6, flatness layer (PLN) 5 and thin film transistor (TFT) device layer 4
Face forms multiple apertures 46 successively penetrated through under.The size of aperture 46 and adjacent two apertures 46 in the present invention
Spacing referring to product design when required bending angle be designed, but be not limited thereto.
Step 807: on Organic Light Emitting Diode (OLED) device layer 6 and aperture 46 in formed encapsulated layer 7.
Specifically, the material (such as SiO) of encapsulated layer 7 is deposited on Organic Light Emitting Diode (OLED) by sedimentation
On device layer 6 and in aperture 46, encapsulated layer 7 is formed, preferably makes its covering and fully wrapped around Organic Light Emitting Diode (OLED)
Device layer 6 to reach more preferably packaging effect, but is not limited thereto.
The production method 8 of the above-mentioned bent flexible display apparatus 1 of the utility model is increased on the basis of current technology
Add a hole opening technology process, so that be both formed on Organic Light Emitting Diode (OLED) device layer 6 when forming encapsulated layer 7,
It is formed in multiple apertures 46, encapsulated layer 7 is made to form stereoscopic protection structure to thin film transistor (TFT) device layer 4.
Bent flexible display apparatus 1 bending when, encapsulated layer 7 can for Organic Light Emitting Diode (OLED) device layer 6,
Flatness layer (PLN) 5 and thin film transistor (TFT) device layer 4 provide the rigid support of horizontal direction, prevent from locally bending
It is excessive；And since the production method 8 of the bent flexible display apparatus 1 of the utility model is on the basis of current technology
Increase by a hole opening technology process, high with current technology matching degree without doing big variation, feasibility is high.
Several preferred embodiments of the utility model have shown and described in above description, but as previously described, it should be understood that
The utility model is not limited to forms disclosed herein, and is not to be taken as the exclusion to other embodiments, and can be used for
Other combinations, modifications, and environments, and above-mentioned introduction or correlation can be passed through within the scope of the inventive concept described herein
The technology or knowledge in field are modified.And changes and modifications made by those skilled in the art do not depart from the spirit of the utility model
And range, then it all should be in the protection scope of the appended claims for the utility model.
Claims (6)
1. a kind of bent flexible display apparatus, which is characterized in that the bent flexible display apparatus includes:
Flexible base board；
Buffer layer is set on the flexible base board；
Thin film transistor device layer is set on the buffer layer, is set on the thin film transistor device layer
There are multiple apertures for penetrating through opposite two surfaces；
Flatness layer is set in the thin film transistor device layer and the multiple aperture；
Organic light emitting diode device layer is set on the flatness layer；And
Encapsulated layer is set on the organic light emitting diode device layer.
2. bent flexible display apparatus according to claim 1, which is characterized in that the buffer layer further include:
Silicon nitride layer is set on the flexible base board；And
Silicon oxide layer is set on the silicon nitride layer, and the device layer is set on the silicon oxide layer.
3. bent flexible display apparatus according to claim 1, which is characterized in that the thin film transistor device
Part layer further include:
Polysilicon layer is set on the buffer layer；
Gate insulating layer is set on the polysilicon layer；
The first metal layer is set on the gate insulating layer；
Interlayer insulating film is set on the first metal layer；And
Second metal layer is set on the interlayer insulating film, and the flatness layer is set in the second metal layer；
Wherein, the multiple aperture penetrates through the polysilicon layer, the gate insulating layer, the first metal layer, the interlayer
Insulating layer and the second metal layer.
4. a kind of bent flexible display apparatus, which is characterized in that the bent flexible display apparatus includes:
Flexible base board；
Buffer layer is set on the flexible base board；
Thin film transistor device layer is set on the buffer layer；
Flatness layer is set on the thin film transistor device layer；
Organic light emitting diode device layer is set on the flatness layer；
Multiple apertures from top to bottom successively penetrate through the organic light emitting diode device layer, the flatness layer and the thin film field
Field effect transistor devices layer；And
Encapsulated layer is set on the organic light emitting diode device layer and in the multiple aperture.
5. bent flexible display apparatus according to claim 4, which is characterized in that the buffer layer further include:
Silicon nitride layer is set on the flexible base board；And
Silicon oxide layer is set on the silicon nitride layer, and the device layer is set on the silicon oxide layer.
6. bent flexible display apparatus according to claim 4, which is characterized in that the thin film transistor device
Part layer further include:
Polysilicon layer is set on the buffer layer；
Gate insulating layer is set on the polysilicon layer；
The first metal layer is set on the gate insulating layer；
Interlayer insulating film is set on the first metal layer；And
Second metal layer is set on the interlayer insulating film, and the flatness layer is set in the second metal layer；
Wherein, the multiple aperture penetrates through the polysilicon layer, the gate insulating layer, the first metal layer, the interlayer
Insulating layer and the second metal layer.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920400477.7U CN209515670U (en) | 2019-03-27 | 2019-03-27 | Bent flexible display apparatus |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920400477.7U CN209515670U (en) | 2019-03-27 | 2019-03-27 | Bent flexible display apparatus |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209515670U true CN209515670U (en) | 2019-10-18 |
Family
ID=68187797
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201920400477.7U Expired - Fee Related CN209515670U (en) | 2019-03-27 | 2019-03-27 | Bent flexible display apparatus |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN209515670U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111755471A (en) * | 2019-03-27 | 2020-10-09 | 陕西坤同半导体科技有限公司 | Bendable flexible display device and manufacturing method thereof |
-
2019
- 2019-03-27 CN CN201920400477.7U patent/CN209515670U/en not_active Expired - Fee Related
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111755471A (en) * | 2019-03-27 | 2020-10-09 | 陕西坤同半导体科技有限公司 | Bendable flexible display device and manufacturing method thereof |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US11251410B2 (en) | Flexible display substrate and method for manufacturing the same | |
| US10714624B2 (en) | Thin-film transistor fabrication method for reducing size of thin-film transistor and pixel area | |
| CN107978627B (en) | Display device and its manufacturing method with micro- cap rock | |
| WO2018223696A1 (en) | Array substrate, manufacturing method, flexible display panel, and display device | |
| CN104103669B (en) | Flexible display panels | |
| CN103794624B (en) | Organic luminescent device and manufacture method thereof | |
| CN107293593B (en) | A kind of display panel and display device | |
| TWI383495B (en) | Flexible oled display with chiplets | |
| CN105470407A (en) | Flexible organic light emitting display device | |
| CN108022935A (en) | Display device | |
| TWI694280B (en) | Display device and manufacturing method thereof | |
| WO2020113838A1 (en) | Display panel | |
| CN103794633B (en) | A kind of array base palte and preparation method thereof, display device | |
| CN106952934A (en) | Large Surface Mirror display device and its manufacture method | |
| WO2017152502A1 (en) | Array substrate and preparation method therefor and display panel | |
| US8178973B2 (en) | Copper wire, method for fabricating the same, and thin film transistor substrate with the same | |
| TW201341923A (en) | Liquid crystal display panel array substrate and method of manufacturing the same | |
| CN109659347A (en) | Flexible OLED display panel and display device | |
| CN209515670U (en) | Bent flexible display apparatus | |
| CN106783910A (en) | Flexible OLED display panel anode preparation method and display panel preparation method | |
| US10082714B2 (en) | Thin-film transistor substrate manufacturing method, thin-film transistor substrate, and liquid crystal panel | |
| CN109360902A (en) | Display panel and preparation method thereof, display device | |
| CN106252360A (en) | Display screen and preparation method thereof | |
| CN209515744U (en) | Flexible display screen | |
| CN203707135U (en) | Array substrate and display device |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| CF01 | Termination of patent right due to non-payment of annual fee | ||
| CF01 | Termination of patent right due to non-payment of annual fee |
Granted publication date: 20191018 Termination date: 20200327 |