CN209513999U - A kind of test device of nonpolarity stem grafting dot circuit - Google Patents
A kind of test device of nonpolarity stem grafting dot circuit Download PDFInfo
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- CN209513999U CN209513999U CN201822081000.5U CN201822081000U CN209513999U CN 209513999 U CN209513999 U CN 209513999U CN 201822081000 U CN201822081000 U CN 201822081000U CN 209513999 U CN209513999 U CN 209513999U
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Abstract
The utility model discloses a kind of test devices of nonpolarity stem grafting dot circuit, and including the test circuit connecting with the dry contact terminal of nonpolarity stem grafting dot circuit, which includes isolated power supply, first diode, photo-coupler and test power supply.After isolated power supply and test power initiation, when the corresponding metal-oxide-semiconductor conducting of dry contact terminal, the cathode terminal of optical receiver exports low level, and after metal-oxide-semiconductor shutdown, the cathode terminal of optical receiver exports high level.Therefore the level value of the cathode terminal by detection optical receiver, compared with the driving instruction to driving circuit can be detected nonpolarity stem grafting dot circuit function it is whether normal, and on this basis, by first diode being spaced apart isolated power supply and dry contact terminal, influence of the circuit devcie for avoiding dry contact terminal from being connected to test circuit.
Description
Technical field
The utility model relates to circuit test fields, more particularly to a kind of test device of nonpolarity stem grafting dot circuit.
Background technique
Dry contact is a kind of electric switch, has two states of open and close.Without polarity between two contacts of dry contact,
It can be interchanged.
In the field of electrical control of rail traffic vehicles, since (such as various solenoid valves connect the electric component in electric wiring
Tentaculum, breaker, switch etc.) characteristic is different, and required driving voltage/power supply also has and respectively has difference, thus to electrodeless
The dry contact of property is widely applied.Since nonpolarity stem grafting dot circuit on rail traffic vehicles is using more,
It needs to test its function.
Fig. 1 is the circuit diagram of nonpolarity stem grafting dot circuit in the prior art.As shown in Figure 1, nonpolarity stem grafting dot circuit
Generally include two metal-oxide-semiconductors (Q1 and Q2 as shown in figure 1) backwards to connection.The source electrode of Q1 and Q2 links together, respective leakage
Pole is as dry contact terminal；Or the drain electrode of Q1 and Q2 links together, respective source electrode is as dry contact terminal.Q1's and Q2
Gate pole links together, and shares a driving circuit；Or the respective gate pole of Q1 and Q2 is connected from different driving circuits respectively.
The ON/OFF state that Q1 and Q2 is predominantly detected to the test of nonpolarity stem grafting dot circuit, sends out with control system
Dry contact driving instruction out is compared, and judges whether nonpolarity stem grafting dot circuit correctly performs driving instruction.
And be different just because of power supply/load of the dry contact terminal of nonpolarity stem grafting dot circuit connection, by even
The mode of the power supply/load influence connect, existing test metal-oxide-semiconductor switching circuit is not suitable for nonpolarity stem grafting dot circuit.
Therefore, how nonpolarity stem grafting dot circuit test and not by the shadow of the circuit devcie of dry contact terminal connection
It rings, is those skilled in the art's technical issues that need to address.
Utility model content
The purpose of the utility model is to provide a kind of test devices of nonpolarity stem grafting dot circuit, for nonpolarity stem grafting
Dot circuit carries out test and is not influenced by the circuit devcie that dry contact terminal connects.
In order to solve the above-mentioned technical problem, the utility model provides a kind of test device of nonpolarity stem grafting dot circuit, packet
Include the test circuit connecting with the dry contact terminal of nonpolarity stem grafting dot circuit；
The test circuit includes isolated power supply, first diode, photo-coupler and test power supply；
Wherein, the output end of the isolated power supply is connect with the anode tap of the first diode, the first diode
Cathode terminal connect with the dry contact terminal；
The anode tap of the optical transmitting set of the photo-coupler is connect with the output end of the isolated power supply, the photo-coupler
Optical receiver anode tap with it is described test power supply output end connect.
Optionally, further includes:
The first level sensitive circuit being connect with the cathode terminal of the optical receiver.
Optionally, further includes:
Current-limiting resistance between the output end of the isolated power supply and the anode tap of the first diode；
The anode tap of the optical transmitting set is connected between the current-limiting resistance and the anode tap of the first diode.
Optionally, further includes:
The second diode between the output end of the isolated power supply and the anode tap of the optical transmitting set.
Optionally, further includes:
Third diode between the cathode terminal and ground of the optical transmitting set.
Optionally, second diode and the third diode are specially zener diode；
Wherein, the cathode terminal of second diode is connect with the output end of the isolated power supply, second diode
Anode tap connect with the anode tap of the optical transmitting set；
The anode tap of the third diode is grounded, the cathode terminal of the third diode and the cathode of the optical transmitting set
End connection.
Optionally, the quantity of the test circuit is specially two, the corresponding stem grafting of a test circuit
Point terminal.
Optionally, further includes:
The cathode terminal of the optical receiver of circuit is tested with the cathode terminal of the optical receiver of the first test circuit and second respectively
The gate circuit of connection, and the second electrical level detection circuit being connect with the gate circuit.
Optionally, the gate circuit is specially NAND gate circuit；
The first input end of the NAND gate circuit is connect with the cathode terminal of the optical receiver of the first test circuit, institute
The second input terminal for stating NAND gate circuit is connect with the cathode terminal of the optical receiver of the second test circuit, the NAND gate electricity
The output end on road is connect with the input terminal of the second electrical level detection circuit.
The test device of nonpolarity stem grafting dot circuit provided by the utility model, including with nonpolarity stem grafting dot circuit
The test circuit of dry contact terminal connection, the test circuit include isolated power supply, first diode, photo-coupler and test electricity
Source；Wherein, the output end of isolated power supply and the anode tap of first diode connect, the cathode terminal of first diode and dry contact end
Son connection；The anode tap of the optical transmitting set of photo-coupler and the output end of isolated power supply connect, the optical receiver of photo-coupler
Anode tap is connect with the output end of test power supply.After isolated power supply and test power initiation, when the corresponding metal-oxide-semiconductor of dry contact terminal
When conducting, since the pressure drop of metal-oxide-semiconductor is less than the pressure drop of the optical receiver of photo-coupler, therefore electric current flows primarily through MOS pipe circuit,
The optical transmitting set of photo-coupler can not shine, and optical receiver can not be connected, therefore export low level in the cathode terminal of optical receiver, when
After metal-oxide-semiconductor shutdown, electric current flows through optical transmitting set, and optical transmitting set, which shines, is connected optical receiver, defeated in the cathode terminal of optical receiver
High level out.Therefore the level value of the cathode terminal by detection optical receiver, it is compared i.e. with the driving instruction to driving circuit
Whether the function of can detect nonpolarity stem grafting dot circuit normal, and on this basis, by first diode by isolated power supply with
Dry contact terminal it is be spaced apart, can to avoid the circuit devcie that dry contact terminal is connected to test circuit influence, thus not
It manages nonpolarity stem grafting dot circuit to run in what working environment, under equal conditions it can be tested.
Detailed description of the invention
In order to illustrate more clearly of the utility model embodiment, letter will be done to attached drawing needed in the embodiment below
Single introduction, it should be apparent that, the drawings in the following description are merely some embodiments of the present invention, general for this field
For logical technical staff, without creative efforts, it can also be obtained according to these attached drawings other accompanying drawings.
Fig. 1 is the circuit diagram of nonpolarity stem grafting dot circuit in the prior art；
Fig. 2 is a kind of circuit diagram of the test device of nonpolarity stem grafting dot circuit provided by the embodiment of the utility model；
Fig. 3 is the circuit diagram of the test device of the nonpolarity stem grafting dot circuit of another kind provided by the embodiment of the utility model.
Specific embodiment
The core of the utility model is to provide a kind of test device of nonpolarity stem grafting dot circuit, for nonpolarity stem grafting
Dot circuit carries out test and is not influenced by the circuit devcie that dry contact terminal connects.
The following will be combined with the drawings in the embodiments of the present invention, carries out the technical scheme in the embodiment of the utility model
It clearly and completely describes, it is clear that the described embodiments are only a part of the embodiments of the utility model, rather than all real
Apply example.Based on the embodiments of the present invention, those of ordinary skill in the art are under the premise of making the creative labor,
Every other embodiment obtained, belongs to scope of protection of the utility model.
Fig. 2 is a kind of circuit diagram of the test device of nonpolarity stem grafting dot circuit provided by the embodiment of the utility model.
The test device of nonpolarity stem grafting dot circuit provided by the embodiment of the utility model includes and nonpolarity dry contact is electric
The test circuit of the dry contact terminal connection on road；
Test circuit includes isolated power supply, first diode, photo-coupler and test power supply；
Wherein, the output end of isolated power supply and the anode tap of first diode connect, the cathode terminal of first diode and dry
Connection point terminal connection；
The anode tap of the optical transmitting set of photo-coupler and the output end of isolated power supply connect, the optical receiver of photo-coupler
Anode tap is connect with the output end of test power supply.
As shown in Fig. 2, in specific implementation, two metal-oxide-semiconductors Q1 and Q2 of corresponding invisible nature stem grafting dot circuit, test electricity
The quantity on road is specifically as follows two, the corresponding dry contact terminal of a test circuit.
The test circuit of corresponding metal-oxide-semiconductor Q1 includes isolated power supply U11, first diode D11, photo-coupler V1A, test electricity
Source U12.Wherein, the output end of isolated power supply U11 is connect with the anode tap of first diode D11, the yin of first diode D11
Extremely it is connect with dry contact terminal 1；The anode tap of the optical transmitting set of photo-coupler V1A and the output end of isolated power supply U11 connect
It connects, cathode terminal ground connection, the anode tap of optical receiver is connect with test power supply U12, and cathode terminal is grounded by pull down resistor R12.
The test circuit of corresponding metal-oxide-semiconductor Q2 includes isolated power supply U21, first diode D21, photo-coupler V2A, test electricity
Source U22.Wherein, the output end of isolated power supply U21 is connect with the anode tap of first diode D21, the yin of first diode D21
Extremely it is connect with dry contact terminal 2；The anode tap of the optical transmitting set of photo-coupler V2A and the output end of isolated power supply U21 connect
It connects, cathode terminal ground connection, the anode tap of optical receiver is connect with test power supply U22, and cathode terminal is grounded by pull down resistor R22.
The grid of metal-oxide-semiconductor Q1 and metal-oxide-semiconductor Q2 are connect with driving circuit respectively, and metal-oxide-semiconductor Q1 is connected with the source electrode of metal-oxide-semiconductor Q2
And it is grounded.
Using the test device of nonpolarity stem grafting dot circuit provided by the embodiment of the utility model, to correspond to metal-oxide-semiconductor Q1's
It tests for circuit, after isolated power supply U11 and test power supply U12 starting, when the conducting of the corresponding metal-oxide-semiconductor of dry contact terminal 1,
The pressure drop of optical receiver due to the pressure drop of metal-oxide-semiconductor Q1 less than photo-coupler V1A, therefore electric current flows primarily through electricity where metal-oxide-semiconductor Q1
The optical transmitting set on road, photo-coupler V1A can not shine, and optical receiver can not be connected, therefore export in the cathode terminal of optical receiver low
Level, after metal-oxide-semiconductor Q1 shutdown, electric current flows through optical transmitting set, and optical transmitting set, which shines, is connected optical receiver, in optical receiver
Cathode terminal exports high level.Therefore by detection optical receiver cathode terminal level value, with the driving instruction to driving circuit into
Whether the function that row comparison can be detected metal-oxide-semiconductor Q1 is normal.
In order to limit the electric current of test circuit, the test device of nonpolarity stem grafting dot circuit can also include:
Current-limiting resistance between the output end of isolated power supply and the anode tap of first diode；
The anode tap of optical transmitting set is connected between current-limiting resistance and the anode tap of first diode.
As shown in Fig. 2, current-limiting resistance R11 is set to isolated power supply U11 and first in the test circuit of corresponding metal-oxide-semiconductor Q1
Between diode D11, between photo-coupler V1A connection and current-limiting resistance R11 and first diode D11.Corresponding metal-oxide-semiconductor Q2's
It tests in circuit, current-limiting resistance R21 is set between isolated power supply U21 and first diode D21, photo-coupler V2A connection and limit
Between leakage resistance R21 and first diode D21.
For the resistance value of current-limiting resistance R11 depending on the voltage swing of isolated power supply U11, current-limiting resistance R21 regards isolated power supply U21
Voltage swing depending on.Current-limiting resistance R11 and current-limiting resistance R21 are specifically as follows potentiometer.
In practical applications, for the pressure drop after metal-oxide-semiconductor is connected close to 0.1V, the pressure drop of diode is 0.6V or so, therefore,
After metal-oxide-semiconductor conducting, the pressure drop of circuit where metal-oxide-semiconductor and first diode is about 0.7V, and the optical transmitting set of photo-coupler
Conduction voltage drop is 1V or so, therefore after metal-oxide-semiconductor conducting, the optical transmitting set of photo-coupler may be connected therewith, it is therefore desirable to
Improve the conduction voltage drop of circuit for light coupler and the difference of the pressure drop after the conducting of metal-oxide-semiconductor circuit.Therefore nonpolarity stem grafting dot circuit
Test device can also include:
The second diode between the output end of isolated power supply and the anode tap of optical transmitting set.
Further, further includes:
Third diode between the cathode terminal and ground of optical transmitting set.
As shown in Fig. 2, the anode tap of the second diode D12 is connected to current limliting electricity in the test circuit of corresponding metal-oxide-semiconductor Q1
It hinders between R11 and the anode tap of first diode D11, the cathode terminal of the second diode D12 and the optical transmitting set of photo-coupler V1A
Anode tap connection；The anode tap of third diode D13 and the cathode terminal of optical transmitting set connect, the cathode of third diode D13
End ground connection.
In the test circuit of corresponding metal-oxide-semiconductor Q2, the anode tap of the second diode D22 is connected to current-limiting resistance R21 and the
Between the anode tap of one diode D21, the anode tap of the optical transmitting set of the cathode terminal and photo-coupler V2A of the second diode D22
Connection；The anode tap of third diode D23 and the cathode terminal of optical transmitting set connect, the cathode terminal ground connection of third diode D23.
In addition, the second diode and third diode can also use zener diode；
Wherein, in each test circuit, the cathode terminal of the second diode and the output end of isolated power supply are connected, the two or two pole
The anode tap of pipe and the anode tap of optical transmitting set connect；
The anode tap of third diode is grounded, and the cathode terminal of third diode and the cathode terminal of optical transmitting set connect.
In order to improve the practicability of device, the test device of nonpolarity stem grafting dot circuit can also include:
The first level sensitive circuit being connect with the cathode terminal of optical receiver.
For each test circuit, the first level sensitive circuit is connected for being surveyed in the cathode terminal of optical receiver
Test result.In specific implementation, the first level sensitive circuit may include indicator light, for showing low and high level；Or first
Level sensitive circuit may include display screen, for showing low and high level.
The test device of nonpolarity stem grafting dot circuit provided by the embodiment of the utility model, by the yin for detecting optical receiver
Extreme level value, compared with the driving instruction to driving circuit can be detected nonpolarity stem grafting dot circuit function whether
Normally, and on this basis, being spaced apart isolated power supply and dry contact terminal by first diode, can be to avoid dry contact
Influence of the circuit devcie that terminal is connected to test circuit, any building ring run on from but regardless of nonpolarity stem grafting dot circuit
In border, under equal conditions it can be tested.
The circuit diagram of the test device of Fig. 3 another kind provided by the embodiment of the utility model is nonpolarity stem grafting dot circuit.
On the basis of the above embodiments, in another embodiment, the test device of nonpolarity stem grafting dot circuit further include:
Respectively with the cathode terminal of the cathode terminal of the optical receiver of the first detection circuit and the optical receiver of the second detection circuit
The second electrical level detection circuit of gate circuit and the AND gate circuit connection of connection.
As shown in figure 3, gate circuit is specifically as follows NAND gate circuit；
The first input end of the NAND gate circuit is connect with the cathode terminal of the optical receiver of the first test circuit, NAND gate electricity
Second input terminal on road is connect with the cathode terminal of the optical receiver of the second test circuit, the output end of NAND gate circuit and the second electricity
The input terminal of flat detection circuit connects.
The cathode terminal for the optical receiver that two input terminals of NAND gate circuit test circuit with two respectively is connect.Above-mentioned
It is mentioned in embodiment, when metal-oxide-semiconductor Q1 conducting, the cathode terminal of the optical receiver of photo-coupler V1A exports low level, metal-oxide-semiconductor Q2
Similarly.Then if nonpolarity dry contact circuit function is normal, the output end of NAND gate circuit exports high level, passes through the second electricity
The output level of flat detection circuit detection NAND gate circuit can determine whether the function of nonpolarity stem grafting dot circuit is normal.
The test device of nonpolarity stem grafting dot circuit provided by the embodiment of the utility model, on the basis of above-described embodiment
On, it further include the NAND gate circuit and and NAND gate circuit that the cathode terminal for the optical receiver for testing circuit with two respectively is connect
The second electrical level detection circuit of output end connection be more convenient for the unified test result for showing nonpolarity stem grafting dot circuit
Staff checks.
It is understood that the test circuit in above-described embodiment is fixedly arranged on test in order to improve the integration of device
In device noumenon, respectively the cathode terminal of the cathode terminal of first diode D11 and first diode D21 draw p-wire be used for
Two dry contact pipe connections.
In several embodiments provided herein, it should be understood that disclosed device, it can be by others side
Formula is realized.For example, the apparatus embodiments described above are merely exemplary, for example, the division of module, only one kind are patrolled
Volume function division, there may be another division manner in actual implementation, such as multiple module or components can combine or can be with
It is integrated into another system, or some features can be ignored or not executed.Another point, it is shown or discussed mutual
Coupling, direct-coupling or communication connection can be through some interfaces, the indirect coupling or communication connection of device or module, can
To be electrically mechanical or other forms.Module, which may or may not be, as illustrated by the separation member physically divides
It opens, the component shown as module may or may not be physical module, it can in one place, Huo Zheye
It can be distributed on multiple network modules.It can select some or all of the modules therein according to the actual needs to realize this
The purpose of example scheme.
It, can also be in addition, can integrate in a processing module in each functional module in each embodiment of the application
It is that modules physically exist alone, can also be integrated in two or more modules in a module.
A kind of test device of nonpolarity stem grafting dot circuit provided by the utility model is described in detail above.
Each embodiment is described in a progressive manner in specification, the highlights of each of the examples are with other embodiments not
Same place, the same or similar parts in each embodiment may refer to each other.For the device disclosed in the embodiment, due to it
It corresponds to the methods disclosed in the examples, so being described relatively simple, reference may be made to the description of the method.It should
It points out, it for those skilled in the art, without departing from the principle of this utility model, can also be right
Some improvement and modification can also be carried out for the utility model, these improvement and modification also fall into the protection scope of the utility model claims
It is interior.It should also be noted that, in the present specification, such as first and second etc relational terms are used merely to an entity
Either operation is perhaps operated with another entity distinguishes without necessarily requiring or implying between these entities or operation
There are any actual relationship or orders.Moreover, the terms "include", "comprise" or its any variant be intended to it is non-
It is exclusive to include, so that the process, method, article or equipment including a series of element is not only wanted including those
Element, but also other elements including being not explicitly listed either further include for this process, method, article or equipment institute
Intrinsic element.In the absence of more restrictions, the element limited by sentence "including a ...", it is not excluded that wrapping
Include in the process, method, article or equipment of the element that there is also other identical elements.
Claims (9)
1. a kind of test device of nonpolarity stem grafting dot circuit, which is characterized in that including the stem grafting with nonpolarity stem grafting dot circuit
The test circuit of point terminal connection；
The test circuit includes isolated power supply, first diode, photo-coupler and test power supply；
Wherein, the output end of the isolated power supply is connect with the anode tap of the first diode, the yin of the first diode
Extremely it is connect with the dry contact terminal；
The anode tap of the optical transmitting set of the photo-coupler is connect with the output end of the isolated power supply, the light of the photo-coupler
The anode tap of receiver is connect with the output end of the test power supply.
2. test device according to claim 1, which is characterized in that further include:
The first level sensitive circuit being connect with the cathode terminal of the optical receiver.
3. test device according to claim 1, which is characterized in that further include:
Current-limiting resistance between the output end of the isolated power supply and the anode tap of the first diode；
The anode tap of the optical transmitting set is connected between the current-limiting resistance and the anode tap of the first diode.
4. test device according to claim 1, which is characterized in that further include:
The second diode between the output end of the isolated power supply and the anode tap of the optical transmitting set.
5. test device according to claim 4, which is characterized in that further include:
Third diode between the cathode terminal and ground of the optical transmitting set.
6. test device according to claim 5, which is characterized in that second diode and the third diode are equal
Specially zener diode；
Wherein, the cathode terminal of second diode is connect with the output end of the isolated power supply, the sun of second diode
Extremely it is connect with the anode tap of the optical transmitting set；
The anode tap of the third diode is grounded, and the cathode terminal of the third diode and the cathode terminal of the optical transmitting set connect
It connects.
7. test device according to claim 1, which is characterized in that the quantity of the test circuit is specially two, and one
A corresponding dry contact terminal of the test circuit.
8. test device according to claim 7, which is characterized in that further include:
It is connect respectively with the cathode terminal of the cathode terminal of the optical receiver of the first test circuit and the optical receiver of the second test circuit
Gate circuit, and the second electrical level detection circuit being connect with the gate circuit.
9. test device according to claim 8, which is characterized in that the gate circuit is specially NAND gate circuit；
The first input end of the NAND gate circuit connect with the cathode terminal of optical receiver of the first test circuit, it is described and
Second input terminal of not circuit is connect with the cathode terminal of the optical receiver of the second test circuit, the NAND gate circuit
Output end is connect with the input terminal of the second electrical level detection circuit.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822081000.5U CN209513999U (en) | 2018-12-11 | 2018-12-11 | A kind of test device of nonpolarity stem grafting dot circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201822081000.5U CN209513999U (en) | 2018-12-11 | 2018-12-11 | A kind of test device of nonpolarity stem grafting dot circuit |
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| CN209513999U true CN209513999U (en) | 2019-10-18 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109406998A (en) * | 2018-12-11 | 2019-03-01 | 株洲田龙铁道电气股份有限公司 | A kind of test device and test method of nonpolarity stem grafting dot circuit |
-
2018
- 2018-12-11 CN CN201822081000.5U patent/CN209513999U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109406998A (en) * | 2018-12-11 | 2019-03-01 | 株洲田龙铁道电气股份有限公司 | A kind of test device and test method of nonpolarity stem grafting dot circuit |
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