CN209496302U - A kind of electrostatic film intelligent driven controlling system - Google Patents
A kind of electrostatic film intelligent driven controlling system Download PDFInfo
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- CN209496302U CN209496302U CN201920592092.5U CN201920592092U CN209496302U CN 209496302 U CN209496302 U CN 209496302U CN 201920592092 U CN201920592092 U CN 201920592092U CN 209496302 U CN209496302 U CN 209496302U
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Abstract
The utility model discloses a kind of electrostatic film intelligent driven controlling system, including constant pressure source module, constant flow module, H bridge control module, processor module, curling electrostatic film and conductive layer, constant pressure source module provides stable busbar voltage to H bridge control module；H bridge control module has the first output end connecting with the first port of constant flow module and the second output terminal connecting with conductive layer, and the second port of constant flow module and the electrostatic film of curling connect, and the electrostatic film of the curling of conductive layer and expansion is oppositely arranged；Under the control of processor module, the first output end and second output terminal of H bridge control module carry out voltage alternating switching；The constant current hold of the constant flow module output.The utility model generates alternating voltage using single-chip microcontroller control H bridge and exports, realize the two-way charging of electrostatic film and conductive layer, guarantee the stable operation of electrostatic film, and sampled voltage is realized to adjust the aperture of the first metal-oxide-semiconductor or the second metal-oxide-semiconductor in real time to electrostatic film constant current output.
Description
Technical field
The utility model relates to electrostatic film drive control field more particularly to a kind of electrostatic film intelligent driven controlling systems.
Background technique
In the prior art, it discloses application No. is 201610624009.9 Chinese patent and is synthesized by a kind of new material
Electrostatic film, as shown in figure 8, be mainly made of the curly conductive film 81 of elasticity, dielectric layer 82, transparency conducting layer 83,
The transparency conducting layer 83 is attached on glassy layer 84, its working principle is that: when accessing power supply 85, the elasticity is curly to be led
Positron-electron is filled on conductive film 81 and respectively on transparency conducting layer 83, so that the curly conductive film of the elasticity 81 is in electrostatic
Itself crimp force is overcome under power effect and (left direction is unfolded in Fig. 8) is unfolded, and the conductive film 81 of unfolded state is led with transparent
Electric layer 83 is oppositely arranged, and is equivalent to capacitor.
In the prior art, the conductive film and transparency conducting layer 83 are powered using constant pressure source, referring to Fig. 9,
Middle SW1 is electronic control switch, and Ceq is the equivalent capacity that conductive film and transparency conducting layer are formed, and is closed by single-chip microcontroller control
It closes or disconnection movement, this charging modes causes following defect:
The first, resistance current-limiting charge is used to electrostatic film, but this circuit charge time is longer；
The second, can only one direction charging so that electrostatic easily accumulates, lead to electrostatic film fluctuation of service；
In third, electrostatic film state or the discrepant situation of size thickness material, it can only be adjusted by adjusting hardware
The driving voltage of electrostatic film；
4th, the recycling curly course of electrostatic film after a loss of power expended for a long time.
Utility model content
In order to solve problems in the prior art, the utility model provides a kind of electrostatic film intelligent driven controlling system, adds
Charging quickly speed shortens the charging time, and the technical solution is as follows:
The utility model provides a kind of electrostatic film intelligent driven controlling system, including constant pressure source module, constant flow module, H
Bridge control module, processor module, curling electrostatic film and conductive layer, the constant pressure source module mentions to the H bridge control module
For stable busbar voltage；
The H bridge control module has the first output end and second output terminal, first output end and the constant current mould
The first port of block connects, a company in the electrostatic film and conductive layer of the second port of the constant flow module and the curling
It connects, another in the electrostatic film and conductive layer of the curling is connect with the second output terminal, the conductive layer and expansion shape
The electrostatic film of curling under state is oppositely arranged；
Under the control of processor module, the first output end and second output terminal of the H bridge control module carry out voltage
Alternation switching；The constant flow module is used to control the constant current hold of constant flow module output.
Further, the constant flow module includes the first metal-oxide-semiconductor, the second metal-oxide-semiconductor, first resistor, second resistance, the one or three
Pole pipe, the second triode, third transistor, the 4th triode, the first operational amplifier and second operational amplifier, described first
Resistance connects to form the first branch with second resistance, and the intermediate connection point and reference ground of the first resistor and second resistance are even
It connects, the drain electrode of first metal-oxide-semiconductor is connect with the first port, source electrode and the first branch of first metal-oxide-semiconductor
One end connection, the other end of the first branch connect with the source electrode of the second metal-oxide-semiconductor, the drain electrode of second metal-oxide-semiconductor with it is described
Second port connection；
The anti-phase input of voltage sample point and first operational amplifier between first metal-oxide-semiconductor and first resistor
End connection, the anti-phase input of voltage sample point and the second operational amplifier between second metal-oxide-semiconductor and second resistance
End connection, the normal phase input end of first operational amplifier and second operational amplifier are all connected with reference voltage, and described first
The output end of operational amplifier is connect with the base stage of the first triode and the second triode respectively, the second operational amplifier
Output end is connect with the base stage of third transistor and the 4th triode respectively, the emitter of the first triode and the second triode
Emitter is connect with the grid of first metal-oxide-semiconductor, the emitter of the emitter of third transistor and the 4th triode with
The grid of second metal-oxide-semiconductor connects.
Further, the H bridge control module further includes third metal-oxide-semiconductor, the 4th metal-oxide-semiconductor, the 5th metal-oxide-semiconductor, the 6th MOS
Pipe, the third metal-oxide-semiconductor, the 4th metal-oxide-semiconductor be arranged in the second branch between the busbar voltage end and ground terminal, and described the
Five metal-oxide-semiconductors, the 6th metal-oxide-semiconductor are arranged on the third branch road between the busbar voltage end and ground terminal, first output end
It is arranged between third metal-oxide-semiconductor and the 4th metal-oxide-semiconductor, the second output terminal is arranged between the 5th metal-oxide-semiconductor and the 6th metal-oxide-semiconductor；
The grid of the third metal-oxide-semiconductor, the grid of the 4th metal-oxide-semiconductor, the grid of the 5th metal-oxide-semiconductor, the 6th metal-oxide-semiconductor grid point
It is not connect with the processor module, the processor module controls the third metal-oxide-semiconductor and the 6th metal-oxide-semiconductor conducting and the 4th
Metal-oxide-semiconductor and the 5th metal-oxide-semiconductor are closed, alternatively, the processor module controls the 4th metal-oxide-semiconductor and the conducting of the 5th metal-oxide-semiconductor and the
Three metal-oxide-semiconductors and the 6th metal-oxide-semiconductor are closed.
Further, the constant pressure source module includes power supply, boost chip and booster circuit, and the power supply is photo-voltaic power supply
Or battery, the booster circuit include transformer, the 7th metal-oxide-semiconductor, 3rd resistor, the 4th resistance and the 5th resistance, the change
The primary coil of depressor is connect with the source electrode of power supply and the 7th metal-oxide-semiconductor respectively, and the drain electrode of the 7th metal-oxide-semiconductor passes through the 5th resistance
Ground connection, the grid of the 7th metal-oxide-semiconductor are connect with the boost chip；
The 3rd resistor connects to form the 4th branch with the 4th resistance, the secondary coil of the transformer respectively with bus
One end of voltage end and the 4th branch connection, the other end ground connection of the 4th branch, sets between the 3rd resistor and the 4th resistance
There is feedback end, the feedback end is connect with the feedback pin of the boost chip.
Further, the booster circuit further includes diode and capacitor, and the diode setting is in secondary coil and mother
Between line voltage end, the conducting direction of the diode is from secondary coil to busbar voltage end；
The both ends of the capacitor are connected in parallel on the both ends of the 4th branch.
Further, first triode is NPN triode, and the collector of first triode connects positive voltage；
Second triode is PNP triode, and the collector of second triode connects negative voltage；
The third transistor is NPN triode, and the collector of the third transistor connects positive voltage；Described 4th 3
Pole pipe is PNP triode, and the collector of the 4th triode connects negative voltage.
Further, first operational amplifier and second operational amplifier are dual power supply amplifier.
Further, the drain electrode of the third metal-oxide-semiconductor is connect with the busbar voltage end, the source electrode of third metal-oxide-semiconductor and
The drain electrode of four metal-oxide-semiconductors connects, and the source electrode of the 4th metal-oxide-semiconductor is connect with ground terminal；
The drain electrode of 5th metal-oxide-semiconductor is connect with the busbar voltage end, the source electrode of the 5th metal-oxide-semiconductor and the 6th metal-oxide-semiconductor
Drain electrode connection, the source electrode of the 6th metal-oxide-semiconductor are connect with ground terminal.
Further, the electrostatic film intelligent driven controlling system further includes voltage regulator module, and the voltage adjusts mould
Block includes third operational amplifier and the 6th resistance, the normal phase input end of the third operational amplifier and the list of processor module
Piece power traction foot connection, the output end of the third operational amplifier respectively with the inverting input terminal of third operational amplifier and the 6th
One end of resistance connects, the other end of the 6th resistance boost chip with given voltage end and the constant pressure source module respectively
Feedback pin connection.
Further, the electrostatic film intelligent driven controlling system further includes discharge module, and the discharge module includes light
Electric coupler and the 7th resistance, the photoelectrical coupler, the 7th resistance and the electrostatic film of the curling and conductive layer are formed into a loop,
The input terminal of the photoelectrical coupler and the single-chip microcontroller pin of processor module connect.
Technical solution bring provided by the utility model has the beneficial effect that:
A. it is charged using constant current to film, the rate of charging is fast；
B.H bridge control module provides the generating positive and negative voltage of alternation to electrostatic film and conductive layer；Single-chip microcontroller (is driven by metal-oxide-semiconductor
Chip is indirect) control H bridge, every time T, progress primary voltage alternation switching makes the electrostatic of electrostatic film and dielectric layer surface
Accumulation can be much less, to guarantee that film is stable；
C. switch moment in voltage alternating, quick charge is conducive to reduce film shake；
D. operation limits loop current value, and protection circuit component avoids failing because of high current；
E. discharge module accelerates the recycling curling of electrostatic film；
F. without changing hardware, the driving voltage value to electrostatic film can be adjusted.
Detailed description of the invention
It, below will be to required in embodiment description in order to illustrate more clearly of the technical scheme in the embodiment of the utility model
Attached drawing to be used is briefly described, it should be apparent that, the accompanying drawings in the following description is only some realities of the utility model
Example is applied, it for those of ordinary skill in the art, without creative efforts, can also be according to these attached drawings
Obtain other attached drawings.
Fig. 1 is the module frame chart of electrostatic film intelligent driven controlling system provided by the embodiment of the utility model；
Fig. 2 is constant pressure source module circuit diagram in electrostatic film intelligent driven controlling system provided by the embodiment of the utility model；
Fig. 3 is H bridge control module circuit diagram in electrostatic film intelligent driven controlling system provided by the embodiment of the utility model；
Fig. 4 is constant flow module circuit diagram in electrostatic film intelligent driven controlling system provided by the embodiment of the utility model；
Fig. 5 is voltage regulator module circuit in electrostatic film intelligent driven controlling system provided by the embodiment of the utility model
Figure；
Fig. 6 is discharge module circuit diagram in electrostatic film intelligent driven controlling system provided by the embodiment of the utility model；
Fig. 7 is the single-chip microcontroller of processor module in electrostatic film intelligent driven controlling system provided by the embodiment of the utility model
Pin configuration schematic diagram；
Fig. 8 is the structural schematic diagram of electrostatic film in the prior art；
Fig. 9 is the schematic diagram of electrostatic film charging circuit in the prior art.
Wherein, appended drawing reference includes: 1- constant pressure source module, 11- boost chip, 12- transformer, 13- diode, 14-
Seven metal-oxide-semiconductors, the 5th resistance of 15-, 16- 3rd resistor, the 4th resistance of 17-, 18- capacitor, 2- constant flow module, the first metal-oxide-semiconductor of 211-,
The second metal-oxide-semiconductor of 212-, 221- first resistor, 222- second resistance, the first triode of 231-, the second triode of 232-, 233-
Three triodes, the 4th triode of 234-, the first operational amplifier of 241-, 242- second operational amplifier, 25- is with reference to ground, 26- the
Single port, 27- second port, 3- processor module, 31- single-chip microcontroller, 4-H bridge control module, 41- third metal-oxide-semiconductor, 42- the 4th
Metal-oxide-semiconductor, the 5th metal-oxide-semiconductor of 43-, the 6th metal-oxide-semiconductor of 44-, the first output end of 46-, 47- second output terminal, 5- voltage regulator module,
51- third operational amplifier, the 6th resistance of 52-, 53- given voltage end, 6- discharge module, 61- photoelectrical coupler, 62- the 7th
Resistance, 81- conductive film, 82- dielectric layer, 83- transparency conducting layer, 84- glassy layer, 85- power supply.
Specific embodiment
In order to make those skilled in the art better understand the scheme of the utility model, below in conjunction with the utility model reality
The attached drawing in example is applied, the technical scheme in the utility model embodiment is clearly and completely described, it is clear that described
Embodiment is only the embodiment of the utility model a part, instead of all the embodiments.Based on the reality in the utility model
Example is applied, every other embodiment obtained by those of ordinary skill in the art without making creative efforts is all answered
When the range for belonging to the utility model protection.
It should be noted that the specification and claims of the utility model and term " first " in above-mentioned attached drawing,
" second " etc. is to be used to distinguish similar objects, without being used to describe a particular order or precedence order.It should be understood that in this way
The data used are interchangeable under appropriate circumstances, so that the embodiments of the present invention described herein can be in addition at this
In illustrate or description those of other than sequence implement.In addition, term " includes " and " having " and their any deformation, meaning
Figure be to cover it is non-exclusive include, for example, containing the process, method of a series of steps or units, device, product or equipment
Those of be not necessarily limited to be clearly listed step or unit, but may include be not clearly listed or for these processes,
Other intrinsic step or units of method, product or equipment.
The curly conductive thin of elasticity in the patent mentioned in electrostatic film and background technique in the utility model embodiment
The structure of film 81 is consistent with working principle, i.e., overcomes itself crimp force to be unfolded to form sunshade by electrostatic attraction.
In one embodiment of the utility model, a kind of electrostatic film intelligent driven controlling system is provided, such as Fig. 1 institute
Show, the electrostatic film intelligent driven controlling system includes constant pressure source module 1, H bridge control module 4, constant flow module 2, processor die
Block 3, the electrostatic film and conductive layer crimped, the constant pressure source module 1 provide stable busbar voltage to the H bridge control module 4；
The electrostatic film of curling mentioned here refers in its natural state, to be curly, after powered up, due to electrostatic film and conductive
Different electrical charges are had on layer, under the principle that there is a natural attraction between the sexes, the electrostatic film overcomes the crimp force of itself and becomes flat
Surface state.
As shown in figure 3, the H bridge control module 4 has the first output end 46 and second output terminal 47, first output
End 46 is connect with the first port 26 of the constant flow module 2, the second port 27 of the constant flow module 2 and the electrostatic of the curling
One in film and conductive layer connects, another in the electrostatic film and conductive layer of the curling connects with the second output terminal 47
It connects, the conductive layer and the electrostatic film of the curling under unfolded state are oppositely arranged；The electrostatic film of curling mentioned here, refers to
Under natural conditions, to be curly, after powered up, due to electrostatic film on conductive layer with different electrical charges, in the opposite sex
Under attracting principle, the electrostatic film overcomes the crimp force of itself and becomes flat state, also, the electrostatic film is dark color,
The conductive film is clear, colorless.
Under the control of processor module 3, the first output end 46 of the H bridge control module 4 and second output terminal 47 into
The switching of row voltage alternating；The constant flow module 2 is used to control the constant current hold of the output of constant flow module 2.
As shown in Fig. 2, the constant pressure source module 1 includes power supply, boost chip 11 and booster circuit, the power supply is photovoltaic
Power supply or battery (VCC in such as Fig. 2), the booster circuit include transformer 12, the 7th metal-oxide-semiconductor 14,3rd resistor 16,
The primary coil of four resistance 17 and the 5th resistance 15, the transformer 12 is connect with the source electrode of power supply and the 7th metal-oxide-semiconductor 14 respectively,
The drain electrode of 7th metal-oxide-semiconductor 14 is grounded by the 5th resistance 15, the grid of the 7th metal-oxide-semiconductor 14 and the boost chip 11
Connection, in a preferred embodiment of the utility model, the boost chip 11 uses LT3751 chip, for controlling boosting
The working condition of circuit；
The 3rd resistor 16 is connected with the 4th resistance 17 forms the 4th branch, the secondary coil difference of the transformer 12
It is connect with the one end at busbar voltage end and the 4th branch, the other end ground connection of the 4th branch, the 3rd resistor 16 and the 4th electricity
Feedback end is equipped between resistance 17, the feedback end is connect with the feedback pin of the boost chip 11.Wherein, the 3rd resistor
16, the 4th resistance 17 and the 5th resistance 15 are sampling resistor, wherein the sampled voltage of the 5th resistance 15 is fed back to described
Boost chip 11；Tie point Feedback between the 3rd resistor 16 and the 4th resistance 17 is connected in boost chip 11
Feedback foot forms feedback control, the busbar voltage end is made to export constant voltage value.
In a preferred embodiment of the utility model, the booster circuit further includes diode 13 and capacitor 18, institute
Diode 13 is stated to be arranged between secondary coil and busbar voltage end, the conducting direction of the diode 13 be from secondary coil to
Busbar voltage end；The both ends of the capacitor 18 are connected in parallel on the both ends of the 4th branch.Busbar voltage end (Vbus in figure) is complete
After adjusting at voltage, output constant voltage is kept.
As shown in figure 3, the H bridge control module 4 further include third metal-oxide-semiconductor 41, the 4th metal-oxide-semiconductor 42, the 5th metal-oxide-semiconductor 43,
Second between the busbar voltage end and ground terminal is arranged in 6th metal-oxide-semiconductor 44, the third metal-oxide-semiconductor 41, the 4th metal-oxide-semiconductor 42
Branch road, the third branch between the busbar voltage end and ground terminal is arranged in the 5th metal-oxide-semiconductor 43, the 6th metal-oxide-semiconductor 44
On, first output end 46 is arranged between third metal-oxide-semiconductor 41 and the 4th metal-oxide-semiconductor 42, and the setting of second output terminal 47 exists
Between 5th metal-oxide-semiconductor 43 and the 6th metal-oxide-semiconductor 44；
The grid of the third metal-oxide-semiconductor 41, the grid of the 4th metal-oxide-semiconductor 42, the 5th metal-oxide-semiconductor 43 grid, the 6th metal-oxide-semiconductor 44
Grid connect respectively with the processor module 3, the processor module 3 controls the third metal-oxide-semiconductor 41 and the 6th metal-oxide-semiconductor
44 conductings and the 4th metal-oxide-semiconductor 42 and the closing of the 5th metal-oxide-semiconductor 43, alternatively, the processor module 3 controls the 4th metal-oxide-semiconductor 42
With the conducting of the 5th metal-oxide-semiconductor 43 and third metal-oxide-semiconductor 41 and the 6th metal-oxide-semiconductor 44 are closed.
From figure 3, it can be seen that the drain electrode of the third metal-oxide-semiconductor 41 is connect with the busbar voltage end, third metal-oxide-semiconductor 41
Source electrode connect with the drain electrode of the 4th metal-oxide-semiconductor 42, the source electrode of the 4th metal-oxide-semiconductor 42 is connect with ground terminal；5th metal-oxide-semiconductor
43 drain electrode is connect with the busbar voltage end, and the source electrode of the 5th metal-oxide-semiconductor 43 is connect with the drain electrode of the 6th metal-oxide-semiconductor 44, and described
The source electrode of six metal-oxide-semiconductors 44 is connect with ground terminal.The end Vbus in Fig. 3 is connect with the end Vbus in Fig. 2.
The processor module 3 is for controlling the first metal-oxide-semiconductor 41, the second metal-oxide-semiconductor 42, third metal-oxide-semiconductor 43, the 4th metal-oxide-semiconductor
44 on and off, specifically, the processor module 3 include single-chip microcontroller 31 and metal-oxide-semiconductor driving chip, specifically, described
Metal-oxide-semiconductor driving chip and four metal-oxide-semiconductors correspond, and the second of the first grid of first metal-oxide-semiconductor 41, the second metal-oxide-semiconductor 42
Grid, the third grid of third metal-oxide-semiconductor 43, the 4th metal-oxide-semiconductor 44 the 4th grid respectively with corresponding metal-oxide-semiconductor driving chip connect
It connects, the single-chip microcontroller controls the working condition of corresponding metal-oxide-semiconductor by control metal-oxide-semiconductor driving chip: in the control of single-chip microcontroller
Under system, first metal-oxide-semiconductor 41 and the conducting of the 4th metal-oxide-semiconductor 44, the second metal-oxide-semiconductor 42 and third metal-oxide-semiconductor 43 are closed, alternatively, described
Second metal-oxide-semiconductor 42 and the conducting of third metal-oxide-semiconductor 43, the first metal-oxide-semiconductor 41 and the 4th metal-oxide-semiconductor 44 are closed.
The operating mode of the H bridge control module 4 is as follows:
The grid of aforementioned four metal-oxide-semiconductor is separately connected corresponding metal-oxide-semiconductor driving chip, the first grid of the first metal-oxide-semiconductor 41
The first metal-oxide-semiconductor driving chip is connected, and so on, when the single-chip microcontroller 31 is only to the first metal-oxide-semiconductor driving chip and the 4th metal-oxide-semiconductor
Driving chip exports high level, then first metal-oxide-semiconductor 41 and the conducting of the 4th metal-oxide-semiconductor 44, and the second metal-oxide-semiconductor 42 and the 3rd MOS
Pipe 43 does not obtain grid voltage and closes, and in the case, first output end 46 exports positive voltage, the second output terminal
47 ground connection, at this point, constant pressure source module 1 provides forward voltage to electrostatic film；
When the single-chip microcontroller 31 only exports high level to the second metal-oxide-semiconductor driving chip and third metal-oxide-semiconductor driving chip, then institute
The second metal-oxide-semiconductor 42 and third metal-oxide-semiconductor 43 is stated to be connected, and first metal-oxide-semiconductor 41 and the 4th metal-oxide-semiconductor 44 do not obtain grid voltage and
It closes, in the case, the second output terminal 47 exports positive voltage, and first output end 46 is grounded, at this point, constant pressure source mould
Block 1 provides forward voltage to conductive layer.
H bridge control module 2 is controlled by processor module 3, every time T, carries out the switching of primary voltage alternation, such electrostatic
The accumulation of static electricity of film and dielectric layer surface can be much less, to guarantee that film is stable, it is preferable that the processor module
3 include single-chip microcontroller and metal-oxide-semiconductor driving chip.
As shown in figure 4, the constant flow module 2 includes the first metal-oxide-semiconductor 211, the second metal-oxide-semiconductor 212, first resistor 221, second
Resistance 222, the first triode 231, the second triode 232, third transistor 233, the 4th triode 234, the first operation amplifier
Device 241 and second operational amplifier 242, the first resistor 221 connect to form the first branch with second resistance 222, and described
One resistance 221 and the intermediate connection point of second resistance 222 are connect with reference to ground 25, the drain electrode of first metal-oxide-semiconductor 211 with it is described
First port 26 connects, and the source electrode of first metal-oxide-semiconductor 211 is connect with one end of the first branch, the first branch
The other end is connect with the source electrode of the second metal-oxide-semiconductor 212, and the drain electrode of second metal-oxide-semiconductor 212 is connect with the second port 27；
Voltage sample point and first operational amplifier 241 between first metal-oxide-semiconductor 211 and first resistor 221
Inverting input terminal connection, voltage sample point between second metal-oxide-semiconductor 212 and second resistance 222 and second operation
The inverting input terminal of amplifier 242 connects, the positive input of first operational amplifier 241 and second operational amplifier 242
End is all connected with reference voltage, the output end of first operational amplifier 241 respectively with the first triode 231 and the second triode
232 base stage connection, the output end of the second operational amplifier 242 respectively with third transistor 233 and the 4th triode 234
Base stage connection, the emitter of the emitter of the first triode 231 and the second triode 232 with first metal-oxide-semiconductor 211
Grid of the emitter of grid connection, the emitter of third transistor 233 and the 4th triode 234 with second metal-oxide-semiconductor 212
Pole connection.
It can be seen from the figure that first triode 231 is NPN triode, the collector of first triode 231
It connects positive voltage (Vp)；Second triode 232 is PNP triode, and the collector of second triode 232 connects negative electricity
It presses (Vn)；The third transistor 233 is NPN triode, and the collector of the third transistor 233 connects positive voltage (Vp)；
4th triode 234 is PNP triode, and the collector of the 4th triode 234 connects negative voltage (Vn)；Described first
Operational amplifier 241 and second operational amplifier 242 are dual power supply amplifier, i.e., as shown in figure 4, first operational amplifier
241 and 8 feet of second operational amplifier 242 be all connected with above-mentioned Vp positive voltage, first operational amplifier 241 and the second operation
4 feet of amplifier 242 are all connected with above-mentioned Vn negative voltage.
The working principle of the constant flow module 2 is as follows:
Effect with reference to ground 25 is different from common ground connection effect, and effect is for first metal-oxide-semiconductor 211 and the first electricity
The second voltage sampled point between first voltage sampled point and the second metal-oxide-semiconductor 212 and second resistance 222 between resistance 221 mentions
Supply reference voltage, on the basis of reference voltage, the first sampled voltage and the first operation that the first voltage sampled point obtains
The reference voltage of 241 normal phase input end of amplifier compares.When the first output end 46 of the H bridge control module 4 exports positive voltage
When, the aperture of the first metal-oxide-semiconductor 211 is controlled by the first operational amplifier 241 at this time, and (the second operation is connected in the second metal-oxide-semiconductor 212
Amplifier 242 does not play regulating and controlling effect), if first sampled voltage is bigger than normal compared with reference voltage Vref, illustrate to flow through first resistor
The electric current of 221 (second ports 27) is bigger than normal, then the output end of first operational amplifier 241 passes through 231 He of the first triode
The grid voltage that second triode 232 controls first metal-oxide-semiconductor 211 becomes smaller, then the aperture of first metal-oxide-semiconductor 211 reduces,
Make the sampled voltage decline of described first resistor 221 (left side in Fig. 4) one end；Conversely, adjusting first if sampled voltage is less than normal
The aperture of metal-oxide-semiconductor 211 becomes larger, and increase the sampled voltage of described 221 one end of first resistor, i.e., in sampling each time, adjusts
The outputting current steadily of the second port 27 is in reference constant current.When the second output terminal 47 of the H bridge control module 4 exports just
When voltage, the base of the second sampled voltage and 242 normal phase input end of second operational amplifier that the second voltage sampled point obtains
Quasi- voltage compares, and controls the aperture of the second metal-oxide-semiconductor 212 by second operational amplifier 242 at this time, and the first metal-oxide-semiconductor 211 is connected
(the first operational amplifier 241 does not play regulating and controlling effect), if second sampled voltage is bigger than normal compared with reference voltage Vref, explanation is flowed through
The electric current of second resistance 222 (first port 26) is bigger than normal, then the output end of the second operational amplifier 242 passes through the three or three pole
The grid voltage that pipe 233 and the 4th triode 234 control second metal-oxide-semiconductor 212 becomes smaller, then second metal-oxide-semiconductor 212 is opened
Degree reduces, and makes the sampled voltage decline of described second resistance 222 (right side in Fig. 4) one end；Conversely, if the second sampled voltage is inclined
Small, then the aperture for adjusting the second metal-oxide-semiconductor 212 becomes larger, and increase the sampled voltage of described 222 one end of second resistance, i.e., each
In secondary sampling, the outputting current steadily of the first port 26 is adjusted in reference constant current.
In a preferred embodiment of the utility model, the electrostatic film intelligent driven controlling system further includes voltage tune
Module 5 is saved, referring to Fig. 5, the voltage regulator module 5 includes third operational amplifier 51 and the 6th resistance 52, the third fortune
The normal phase input end for calculating amplifier 51 is connect with 31 pin of single-chip microcontroller (Vsp pin) of processor module 3, and the third operation is put
The output end of big device 51 is connect with one end of the inverting input terminal of third operational amplifier 51 and the 6th resistance 52 respectively, and described the
The other end of six resistance 52 connects with the feedback pin of given voltage end 53 and the boost chip 11 of the constant pressure source module 1 respectively
It connects.
Here the effect of voltage regulator module 5 is: the high pressure V that constant pressure source module 1 exportsbus, this VbusValue is one
Definite value, it would be desirable to according to the size of load and other service conditions, change the voltage value wanted, and voltage adjusts mould
Block 5 exactly plays the role of this, and realization principle is as follows: the VbusWith can be calculated by the following formula to obtain:
Vbus=Vfb(1+Rs1/Rs2)+Rs1/Rs3(Vfb-Vsp),
Wherein VfbIt is given voltage value (the resistance Rs1 and Rs2 in the given voltage end 53 and Fig. 2 at given voltage end 53
Intermediate point connection), for example 1.22V can be used, Rs1, Rs2, Rs3 are respectively 3rd resistor 16, the 4th resistance 17, the 6th resistance
52 resistance value, VspIt is that its sizes values, such V can be controlled by single-chip microcontroller 31busAnd VspCertain functional relation is constituted, is changed
VspThe available desired V of valuebusValue.
In another preferred embodiment of the utility model, as shown in Figure 1, the electrostatic film intelligent driven controlling system
It further include discharge module 6, as shown in fig. 6, the discharge module 6 includes photoelectrical coupler 61 and the 7th resistance 62, the photoelectricity
Coupler 61, the 7th resistance 62 and the electrostatic film and conductive layer of the curling are formed into a loop, the input of the photoelectrical coupler 61
End is connect with 31 pin of single-chip microcontroller of processor module 3.After constant pressure source module 1 is cut off the power, the second port 27 and
Two output ends 47 are just disconnected with power supply, so that the electrostatic film of the curling of the unfolded state can recycle into rolled state, but
It is, if the recycling curling of electrostatic film will be a very long process and (collect on electrostatic film without reference to discharge module 6
Charge slow release), therefore, the discharge module 6 enables to the electrostatic film of expansion to be promptly restored to rolled state, work
Process is as follows: after cutting off the power, the Retract pin (referring to Fig. 7) of the single-chip microcontroller 31 provides a level change signal
(being not limited to the low level in Fig. 6), so that the LEDs ON of the input side of photoelectrical coupler 61, and then photoelectric coupling
The output end of device 61 is closed, so that the 7th resistance 62 is connected with the circuit where the electrostatic film of the curling and conductive layer,
Then the charge on electrostatic film can run through the consumption of the 7th resistance 62 and discharge, so that electrostatic film loses electrostatic attraction and restores
At curly.
Finally the pin of the single-chip microcontroller 31 of processor module 3 is made as described below:
U2 foot referring to boost chip 11 in Fig. 7, StartUp and Fig. 2 is connected, Vsp pin and third operation amplifier in Fig. 5
3 feet of device 51 are connected, the vdd voltage end in Fig. 5 in 8 foot map interlinkings 6 of third operational amplifier 51, third operational amplifier 51
4 feet ground connection, S1 pin are connect with 1 foot of the first metal-oxide-semiconductor 41 in Fig. 3, and S2 pin is connect with 1 foot of the second metal-oxide-semiconductor 42 in Fig. 3,
S3 pin is connect with 1 foot of third metal-oxide-semiconductor 43 in Fig. 3, and S4 pin is connect with 1 foot of the 4th metal-oxide-semiconductor 44 in Fig. 3, and Retract draws
Foot is connected with one end of 61 input side of photoelectrical coupler in Fig. 6, and AD pin is connected with resistance R1 in Fig. 2 with R2 tie point.
The utility model generates alternating voltage using single-chip microcontroller control H bridge and exports, and realizes the two-way of electrostatic film and conductive layer
Charging, guarantees the stable operation of electrostatic film, and sampled voltage is realized with adjusting the aperture of the first metal-oxide-semiconductor or the second metal-oxide-semiconductor in real time
To electrostatic film constant current output.
The above is only the preferred embodiment of the present invention, is not intended to limit the utility model, all practical at this
Within novel spirit and principle, any modification, equivalent replacement, improvement and so on should be included in the guarantor of the utility model
Within the scope of shield.
Claims (10)
1. a kind of electrostatic film intelligent driven controlling system, which is characterized in that including constant pressure source module (1), constant flow module (2), H bridge
Control module (4), processor module (3), the electrostatic film and conductive layer crimped, constant pressure source module (1) the Xiang Suoshu H bridge control
Module (4) provides stable busbar voltage；
The H bridge control module (4) have the first output end (46) and second output terminal (47), first output end (46) and
The first port (26) of the constant flow module (2) connects, and the second port (27) of the constant flow module (2) is quiet with the curling
One in electrolemma and conductive layer connection, another and the second output terminal in the electrostatic film and conductive layer of the curling
(47) it connects, the conductive layer and the electrostatic film of the curling under unfolded state are oppositely arranged；
Under the control of processor module (3), the first output end (46) and second output terminal of the H bridge control module (4)
(47) voltage alternating switching is carried out；The constant flow module (2) is used to control the constant current hold of constant flow module (2) output.
2. electrostatic film intelligent driven controlling system according to claim 1, which is characterized in that constant flow module (2) packet
Include the first metal-oxide-semiconductor (211), the second metal-oxide-semiconductor (212), first resistor (221), second resistance (222), the first triode (231),
Second triode (232), third transistor (233), the 4th triode (234), the first operational amplifier (241) and the second operation
Amplifier (242), the first resistor (221) are connected to form the first branch with second resistance (222), the first resistor
(221) it is connect with the intermediate connection point of second resistance (222) with reference to ground (25), the drain electrode of first metal-oxide-semiconductor (211) and institute
First port (26) connection is stated, the source electrode of first metal-oxide-semiconductor (211) is connect with one end of the first branch, and described first
The other end of branch is connect with the source electrode of the second metal-oxide-semiconductor (212), the drain electrode and the second port of second metal-oxide-semiconductor (212)
(27) it connects；
Voltage sample point and first operational amplifier between first metal-oxide-semiconductor (211) and first resistor (221)
(241) inverting input terminal connection, voltage sample point between second metal-oxide-semiconductor (212) and second resistance (222) with it is described
The inverting input terminal of second operational amplifier (242) connects, first operational amplifier (241) and second operational amplifier
(242) normal phase input end is all connected with reference voltage, the output end of first operational amplifier (241) respectively with the one or three pole
Pipe (231) connected with the base stage of the second triode (232), the output end of the second operational amplifier (242) respectively with third
Triode (233) is connected with the base stage of the 4th triode (234), the emitter and the second triode of the first triode (231)
(232) emitter is connect with the grid of first metal-oxide-semiconductor (211), the emitter and the four or three of third transistor (233)
The emitter of pole pipe (234) is connect with the grid of second metal-oxide-semiconductor (212).
3. electrostatic film intelligent driven controlling system according to claim 1, which is characterized in that the H bridge control module (4)
It further include third metal-oxide-semiconductor (41), the 4th metal-oxide-semiconductor (42), the 5th metal-oxide-semiconductor (43), the 6th metal-oxide-semiconductor (44), the third metal-oxide-semiconductor
(41), the 4th metal-oxide-semiconductor (42) is arranged in the second branch between the busbar voltage end and ground terminal, the 5th metal-oxide-semiconductor
(43), the 6th metal-oxide-semiconductor (44) is arranged on the third branch road between the busbar voltage end and ground terminal, first output end
(46) it is arranged between third metal-oxide-semiconductor (41) and the 4th metal-oxide-semiconductor (42), the second output terminal (47) is arranged in the 5th metal-oxide-semiconductor
(43) between the 6th metal-oxide-semiconductor (44)；
The grid of the third metal-oxide-semiconductor (41), the grid of the 4th metal-oxide-semiconductor (42), the 5th metal-oxide-semiconductor (43) grid, the 6th metal-oxide-semiconductor
(44) grid is connect with the processor module (3) respectively, and the processor module (3) controls the third metal-oxide-semiconductor (41)
With the conducting of the 6th metal-oxide-semiconductor (44) and the 4th metal-oxide-semiconductor (42) and the 5th metal-oxide-semiconductor (43) are closed, alternatively, the processor module (3)
It controls the 4th metal-oxide-semiconductor (42) and the conducting of the 5th metal-oxide-semiconductor (43) and third metal-oxide-semiconductor (41) and the 6th metal-oxide-semiconductor (44) is closed.
4. electrostatic film intelligent driven controlling system according to claim 1, which is characterized in that the constant pressure source module (1)
Including power supply, boost chip (11) and booster circuit, the power supply is photo-voltaic power supply or battery, and the booster circuit includes becoming
Depressor (12), the 7th metal-oxide-semiconductor (14), 3rd resistor (16), the 4th resistance (17) and the 5th resistance (15), the transformer (12)
Primary coil connect respectively with the source electrode of power supply and the 7th metal-oxide-semiconductor (14), the drain electrode of the 7th metal-oxide-semiconductor (14) passes through the 5th
Resistance (15) ground connection, the grid of the 7th metal-oxide-semiconductor (14) are connect with the boost chip (11)；
The 3rd resistor (16) is connected with the 4th resistance (17) forms the 4th branch, the secondary coil point of the transformer (12)
It is not connect with the one end at busbar voltage end and the 4th branch, the other end of the 4th branch ground connection, the 3rd resistor (16) and the
Feedback end is equipped between four resistance (17), the feedback end is connect with the feedback pin of the boost chip (11).
5. electrostatic film intelligent driven controlling system according to claim 4, which is characterized in that the booster circuit further includes
Diode (13) and capacitor (18), the diode (13) are arranged between secondary coil and busbar voltage end, the diode
(13) conducting direction is from secondary coil to busbar voltage end；
The both ends of the capacitor (18) are connected in parallel on the both ends of the 4th branch.
6. electrostatic film intelligent driven controlling system according to claim 2, which is characterized in that first triode
It (231) is NPN triode, the collector of first triode (231) connects positive voltage；Second triode (232) is
The collector of PNP triode, second triode (232) connects negative voltage；
The third transistor (233) is NPN triode, and the collector of the third transistor (233) connects positive voltage；It is described
4th triode (234) is PNP triode, and the collector of the 4th triode (234) connects negative voltage.
7. electrostatic film intelligent driven controlling system according to claim 2, which is characterized in that first operational amplifier
(241) and second operational amplifier (242) is dual power supply amplifier.
8. electrostatic film intelligent driven controlling system according to claim 3, which is characterized in that the third metal-oxide-semiconductor (41)
Drain electrode connect with the busbar voltage end, the source electrode of third metal-oxide-semiconductor (41) is connect with the drain electrode of the 4th metal-oxide-semiconductor (42), described
The source electrode of 4th metal-oxide-semiconductor (42) is connect with ground terminal；
The drain electrode of 5th metal-oxide-semiconductor (43) is connect with the busbar voltage end, the source electrode and the 6th MOS of the 5th metal-oxide-semiconductor (43)
The drain electrode connection of (44) is managed, the source electrode of the 6th metal-oxide-semiconductor (44) is connect with ground terminal.
9. electrostatic film intelligent driven controlling system according to claim 4, which is characterized in that further include voltage regulator module
(5), the voltage regulator module (5) includes third operational amplifier (51) and the 6th resistance (52), the third operation amplifier
The normal phase input end of device (51) is connect with single-chip microcontroller (31) pin of processor module (3), the third operational amplifier (51)
Output end connect respectively with one end of the inverting input terminal of third operational amplifier (51) and the 6th resistance (52), the described 6th
Feedback of the other end of resistance (52) respectively with given voltage end (53) and the boost chip (11) of the constant pressure source module (1) is drawn
Foot connection.
10. electrostatic film intelligent driven controlling system according to claim 4, which is characterized in that further include discharge module
(6), the discharge module (6) includes photoelectrical coupler (61) and the 7th resistance (62), the photoelectrical coupler (61), the 7th electricity
The electrostatic film and conductive layer for hindering (62) and the curling are formed into a loop, the input terminal and processor die of the photoelectrical coupler (61)
Single-chip microcontroller (31) pin of block (3) connects.
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109992033A (en) * | 2019-04-28 | 2019-07-09 | 苏州威尔阳光智能科技有限公司 | A kind of electrostatic film intelligent driven controlling system |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109992033A (en) * | 2019-04-28 | 2019-07-09 | 苏州威尔阳光智能科技有限公司 | A kind of electrostatic film intelligent driven controlling system |
| CN109992033B (en) * | 2019-04-28 | 2024-03-01 | 苏州威尔阳光智能科技有限公司 | Intelligent driving control system for electrostatic film |
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