CN209488185U - Silicon controlled switching device and network system - Google Patents

Silicon controlled switching device and network system Download PDF

Info

Publication number
CN209488185U
CN209488185U CN201920524609.7U CN201920524609U CN209488185U CN 209488185 U CN209488185 U CN 209488185U CN 201920524609 U CN201920524609 U CN 201920524609U CN 209488185 U CN209488185 U CN 209488185U
Authority
CN
China
Prior art keywords
silicon
controlled
circuit
voltage
controller
Prior art date
Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
Active
Application number
CN201920524609.7U
Other languages
Chinese (zh)
Inventor
唐雅萍
Current Assignee (The listed assignees may be inaccurate. Google has not performed a legal analysis and makes no representation or warranty as to the accuracy of the list.)
LANGFANG IN-POWER ELECTRIC Co Ltd
Original Assignee
LANGFANG IN-POWER ELECTRIC Co Ltd
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by LANGFANG IN-POWER ELECTRIC Co Ltd filed Critical LANGFANG IN-POWER ELECTRIC Co Ltd
Priority to CN201920524609.7U priority Critical patent/CN209488185U/en
Application granted granted Critical
Publication of CN209488185U publication Critical patent/CN209488185U/en
Active legal-status Critical Current
Anticipated expiration legal-status Critical

Links

Classifications

    • YGENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
    • Y02TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
    • Y02EREDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
    • Y02E40/00Technologies for an efficient electrical power generation, transmission or distribution
    • Y02E40/30Reactive power compensation

Abstract

The utility model provides a kind of silicon controlled switching device and network system, in the silicon controlled switching device, terminate reactive compensation order when triggering switching command signal circuit detects, and under the conditions of positive phase sequence, controller is silicon-controlled in the rising edge control trigger circuit excision first of the zero cross signal of BA line voltage, silicon-controlled in the failing edge control trigger circuit excision second of the zero cross signal of BC line voltage;Terminate reactive compensation order when triggering switching command signal circuit detects, and under the conditions of negative-phase sequence, controller is silicon-controlled in the rising edge control trigger circuit excision second of the zero cross signal of BC line voltage, it is silicon-controlled in the failing edge control trigger circuit excision first of the zero cross signal of BA line voltage, such excision logic, it may insure when cutting off silicon-controlled, the voltage that silicon-controlled both ends are born is minimum, it also just no longer needs to so very high silicon-controlled using stress levels, it reduces costs, alleviates the high technical problem of the installation cost of existing switched capacitor.

Description

Silicon controlled switching device and network system
Technical field
The utility model relates to the technical fields of switching device, more particularly, to a kind of silicon controlled switching device and power grid system System.
Background technique
Power equipment is worked according to electromagnetic induction principle mostly in power grid, they establish friendship in conversion process of energy The power of varying magnetic field, the power and release that absorb in one cycle is equal.Power supply energy is passing through pure inductance or purely capacitive electricity There is no energy consumptions when road, only back and forth exchange between power load and power supply, since this exchange power does not do work externally, Cause referred to herein as reactive power.Reactive power reflects the case where internal round-trip positive energy exchange with outside, it is unlike active power The mean power that the unit time done is indicated like that, but with it is maintenance power system stability active power as, is guaranteed electric Energy quality and safe operation are essential.
If the reactive power in power grid is insufficient, electrical equipment is caused not have enough reactive powers to establish and maintain just Normal electromagnetic field will result in the end voltage decline of equipment, it cannot be guaranteed that power equipment works under specified technical parameter, from And influence the normal work of electrical equipment.Specific manifestation is in the following areas: (1) reducing active power, make the electricity in electric system Gas place capacity cannot be fully utilized;(2) increase active power and electric energy loss defeated, in wiring circuit;(3) make route The loss of voltage increase.Power quality can be effectively improved using thristor switched capacitor, conventional switched capacitor is opened at present Although close can switched capacitor compensating power, when turning off silicon-controlled silicon-controlled both end voltage it is larger (because The voltage of system can be lifted by the occasion of switched capacitor, capacitor after throwing above, and the silicon-controlled shutdown voltage born at this time is lift Voltage (peak-to-peak value including voltage and system voltage in reactance) after rising), it needs very high controllable using stress levels Silicon, it is with high costs.
To sum up, there are technical problems at high cost for the device of existing switched capacitor.
Utility model content
In view of this, the purpose of this utility model is to provide a kind of silicon controlled switching device and network system, to alleviate The high technical problem of the installation cost of existing switched capacitor.
In a first aspect, the utility model embodiment provides a kind of silicon controlled switching device, comprising: it is silicon-controlled and with it is described The trigger board of silicon-controlled connection;The trigger board include: triggering switching command signal circuit, controller, zero cross detection circuit and Trigger circuit;
The silicon-controlled quantity is two, and it is first silicon-controlled that one of them is silicon-controlled, and it is second that another is silicon-controlled Silicon-controlled, the described first silicon-controlled input terminal is connect by A phase winding displacement with power grid, and the described second silicon-controlled input terminal passes through C phase winding displacement is connect with power grid, and the described first silicon-controlled output end is connect with the first end of the first reactance, and described second is silicon-controlled Output end connect with the first end of the second reactance, one end of B phase winding displacement is connect with power grid, the other end and third of B phase winding displacement The first end of reactance connects, the second end of first reactance, the second end of second reactance and the third reactance the Two ends are connect with three angle points of the capacitor of delta connection respectively;
Wherein, reactive compensation order is triggered when the triggering switching command signal circuit detects, and passes through the zero passage When detection circuit detects the silicon-controlled both end voltage zero cross signal, the controller sends driving pulse, by described Trigger circuit drives first silicon-controlled and described second controlled silicon conducting;
Terminate reactive compensation order when the triggering switching command signal circuit detects, and under the conditions of positive phase sequence, institute The rising edge control trigger circuit excision described first that controller is stated in the zero cross signal of BA line voltage is silicon-controlled, in BC line It is silicon-controlled that the failing edge of the zero cross signal of voltage controls the trigger circuit excision described second;
Terminate reactive compensation order when the triggering switching command signal circuit detects, and under the conditions of negative-phase sequence, institute The rising edge control trigger circuit excision described second that controller is stated in the zero cross signal of BC line voltage is silicon-controlled, in BA line It is silicon-controlled that the failing edge of the zero cross signal of voltage controls the trigger circuit excision described first.
Further, the zero cross detection circuit is connect with the input terminal of the controller, the output end of the controller It is connect with the trigger circuit;
Under the conditions of positive phase sequence, when detecting the described second silicon-controlled both end voltage mistake by the zero cross detection circuit When zero failing edge, the controller is silicon-controlled by trigger circuit investment described second;In the described second silicon-controlled throwing After entering, if the zero cross detection circuit detects the described first silicon-controlled both end voltage zero passage in the first preset time When failing edge, the controller is silicon-controlled by trigger circuit investment described first;Wherein, the zero cross detection circuit is such as The failing edge of the described first silicon-controlled both end voltage is not detected in fruit in first preset time, then examines in the zero passage Slowdown monitoring circuit detects that postpone the second preset time investment described first after the rising edge of BA line voltage zero passage silicon-controlled.
Further, under the conditions of negative-phase sequence, when detecting that described first is silicon-controlled by the zero cross detection circuit When the rising edge of both end voltage zero passage, the controller is silicon-controlled by trigger circuit investment described first;Described After one silicon-controlled investment, if the zero cross detection circuit detects the described second silicon-controlled both ends in the first preset time When the rising edge of voltage zero-cross, the controller is silicon-controlled by trigger circuit investment described second;Wherein, the zero passage If the rising edge of the described second silicon-controlled both end voltage is not detected in detection circuit in first preset time, The zero cross detection circuit detects that postpone the second preset time investment described second after the failing edge of BA line voltage zero passage controllable Silicon.
Further, the trigger board further include: non-isolated power supply circuit, the non-isolated power supply circuit and the triggering Plate connection;
The non-isolated power supply circuit for the circuit in the trigger board in addition to the zero cross detection circuit for providing Electric energy.
Further, the trigger board further include: isolated power supply circuit, the isolated power supply circuit and the zero passage detection Circuit connection;
The isolated power supply circuit is used to provide electric energy for the zero cross detection circuit.
Further, described device further include: radiator and blower;The trigger board further include: temperature sensing circuit and Draught fan control circuit;Wherein, the input terminal of the temperature sensing circuit is connect with the radiator, the temperature sensing circuit Output end is connect with the controller, and the controller is connect with the draught fan control circuit, the draught fan control circuit and institute State blower connection;
The temperature sensing circuit is used to detect the temperature of the radiator, and the temperature for the radiator that will test Degree is sent to the controller, wherein when the controller determines that the temperature for obtaining the radiator is greater than the first temperature threshold When, the blower is controlled by the draught fan control circuit and is opened;When controller determination obtains the temperature of the radiator When greater than second temperature threshold value, the controller control silicon-controlled switching that do not execute is acted.
Further, the trigger board further include: power failure detection circuit;Wherein, the power failure detection circuit It include: voltage-stabiliser tube and triode, the anode of the voltage-stabiliser tube is by driving resistance to connect with the base stage of the triode;
When supply voltage is less than the pressure stabilizing value of the voltage-stabiliser tube, the triode cut-off, and then generate power failure letter Number, and the power failure signal is sent to the controller, so that controller control is described silicon-controlled not to execute throwing Cut movement.
Further, the trigger board further include: over-voltage detection circuit, the over-voltage detection circuit and the controller connect It connects;
The over-voltage detection circuit is for detecting network voltage, wherein described when the network voltage is higher than preset value Over-voltage detection circuit generates over-voltage signal, and the over-voltage signal is sent to controller, so that described in controller control It is silicon-controlled to stop working.
Further, the BA line voltage that the positive phase sequence and the negative-phase sequence are detected according to the zero cross detection circuit Relationship between BC line voltage determines.
Second aspect, the utility model embodiment additionally provide a kind of network system, comprising: are arranged in the network system There is silicon controlled switching device described in above-mentioned first aspect.
The utility model embodiment bring it is following the utility model has the advantages that
In the silicon controlled switching device of the utility model, the first silicon-controlled input terminal is connected by A phase winding displacement and power grid It connecing, the second silicon-controlled input terminal is connect by C phase winding displacement with power grid, and the first of the first silicon-controlled output end and the first reactance End connection, the second silicon-controlled output end are connect with the first end of the second reactance, and one end of B phase winding displacement is connect with power grid, and B phase is arranged The other end of line is connect with the first end of third reactance, the second end of the first reactance, the second end of the second reactance and third reactance Second end connect respectively with three angle points of the capacitor of delta connection;Wherein, when triggering switching command signal circuit detection To triggering reactive compensation order, and when detecting silicon-controlled both end voltage zero cross signal by zero cross detection circuit, controller Driving pulse is sent, drives first silicon-controlled and the second controlled silicon conducting by trigger circuit;When triggering switching command signal electricity Road, which detects, terminates reactive compensation order, and under the conditions of positive phase sequence, rising edge of the controller in the zero cross signal of BA line voltage Control trigger circuit excision first is silicon-controlled, and cutting off second in the failing edge control trigger circuit of the zero cross signal of BC line voltage can Control silicon;Terminate reactive compensation order when triggering switching command signal circuit detects, and under the conditions of negative-phase sequence, controller is in BC The rising edge control trigger circuit excision second of the zero cross signal of line voltage is silicon-controlled, in the decline of the zero cross signal of BA line voltage It is silicon-controlled along control trigger circuit excision first.As can be seen from the above description, when triggering switching command signal circuit detects knot Beam reactive compensation order, and under the conditions of positive phase sequence, rising edge control triggering electricity of the controller in the zero cross signal of BA line voltage Road excision first is silicon-controlled, silicon-controlled in the failing edge control trigger circuit excision second of the zero cross signal of BC line voltage;Work as touching Hair switching command signal circuit, which detects, terminates reactive compensation order, and under the conditions of negative-phase sequence, controller is in BC line voltage The rising edge control trigger circuit excision second of zero cross signal is silicon-controlled, controls touching in the failing edge of the zero cross signal of BA line voltage Power Generation Road cuts off first silicon-controlled, such excision logic, it can be ensured that when cutting off silicon-controlled, the electricity of silicon-controlled both ends receiving Pressure is minimum, also just no longer needs to so very high silicon-controlled using stress levels, reduces costs, alleviates existing switching capacitance The high technical problem of the installation cost of device.
Other feature and advantage of the utility model will illustrate in the following description, also, partly from specification In become apparent, or understood and implementing the utility model.The purpose of this utility model and other advantages are illustrating Specifically noted structure is achieved and obtained in book, claims and attached drawing.
To enable the above objects, features, and advantages of the utility model to be clearer and more comprehensible, preferred embodiment is cited below particularly, and Cooperate appended attached drawing, is described in detail below.
Detailed description of the invention
It, below will be right in order to illustrate more clearly of specific embodiment of the present invention or technical solution in the prior art Specific embodiment or attached drawing needed to be used in the description of the prior art are briefly described, it should be apparent that, it is described below In attached drawing be that some embodiments of the utility model are not paying creativeness for those of ordinary skill in the art Under the premise of labour, it is also possible to obtain other drawings based on these drawings.
Fig. 1 is a kind of structural schematic diagram of silicon controlled switching device provided by the embodiment of the utility model;
Fig. 2 is the structural schematic diagram of switching logic circuit provided by the embodiment of the utility model;
Fig. 3 is the structural schematic diagram of temperature protection circuit provided by the embodiment of the utility model;
Fig. 4 is the structural schematic diagram of power failure provided by the embodiment of the utility model and overvoltage protection.
Icon:
11- first is silicon-controlled;12- second is silicon-controlled;13- triggers switching command signal circuit;14- controller;15- zero passage Detection circuit;16- trigger circuit;17- radiator;18- blower;19- temperature sensing circuit;20- draught fan control circuit;21- electricity Source fault detection circuit;22- over-voltage detection circuit.
Specific embodiment
To keep the objectives, technical solutions, and advantages of the embodiments of the present invention clearer, below in conjunction with attached drawing to this The technical solution of utility model is clearly and completely described, it is clear that described embodiment is that the utility model a part is real Example is applied, instead of all the embodiments.Based on the embodiments of the present invention, those of ordinary skill in the art are not making Every other embodiment obtained, fall within the protection scope of the utility model under the premise of creative work.
For convenient for understanding the present embodiment, first to a kind of silicon controlled switching disclosed in the utility model embodiment Device describes in detail.
Embodiment one:
A kind of silicon controlled switching device, referring to fig. 1 and fig. 2, comprising: triggering silicon-controlled and with silicon-controlled connection Plate;Trigger board includes: triggering switching command signal circuit 13, controller 14, zero cross detection circuit 15 and trigger circuit 16;
Silicon-controlled quantity is two, and it is first silicon-controlled that one of them is silicon-controlled, and it is second controllable that another is silicon-controlled Silicon, first silicon-controlled 11 input terminal are connect by A phase winding displacement with power grid, and second silicon-controlled 12 input terminal passes through C phase winding displacement Connect with power grid, first silicon-controlled 11 output end is connect with the first end of the first reactance, second silicon-controlled 12 output end with The first end of second reactance connects, and one end of B phase winding displacement is connect with power grid, the other end of B phase winding displacement and the first of third reactance End connection, the second end of the second end of the first reactance, the second end of the second reactance and third reactance respectively with delta connection Three angle points of capacitor connect;
Wherein, reactive compensation order is triggered when triggering switching command signal circuit 13 detects, and passes through zero passage detection electricity When road 15 detects silicon-controlled both end voltage zero cross signal, controller 14 sends driving pulse, drives by trigger circuit 16 First silicon-controlled 11 and second silicon-controlled 12 conducting;
Terminate reactive compensation order when triggering switching command signal circuit 13 detects, and under the conditions of positive phase sequence, control Device 14 cuts off first silicon-controlled 11 in the rising edge control trigger circuit 16 of the zero cross signal of BA line voltage, in the mistake of BC line voltage Failing edge control trigger circuit 16 excision second silicon-controlled 12 of zero-signal;
Terminate reactive compensation order when triggering switching command signal circuit 13 detects, and under the conditions of negative-phase sequence, control Device 14 cuts off second silicon-controlled 12 in the rising edge control trigger circuit 16 of the zero cross signal of BC line voltage, in the mistake of BA line voltage Failing edge control trigger circuit 16 excision first silicon-controlled 11 of zero-signal.
It is silicon-controlled to pass through lead and touching for the silicon-controlled of two-way inverse parallel type, K and G in the utility model embodiment Send out plate connection.
In the switch of traditional switched capacitor, in the moment of silicon-controlled shutdown, the voltage of silicon-controlled receiving is in reactance The voltage at both ends adds the peak-to-peak value of network system voltage, that is, the voltage at silicon-controlled both ends is larger.Compared with prior art, In the silicon controlled switching device of the utility model, inventor devises unique switching logic, specifically: when triggering switching instruction Signal circuit 13 detects triggering reactive compensation order, and detects silicon-controlled both end voltage mistake by zero cross detection circuit 15 When zero-signal, controller 14 sends driving pulse, leads by the driving of trigger circuit 16 first silicon-controlled 11 and second silicon-controlled 12 It is logical;
Terminate reactive compensation order when triggering switching command signal circuit 13 detects, and under the conditions of positive phase sequence, control Device 14 cuts off first silicon-controlled 11 in the rising edge control trigger circuit 16 of the zero cross signal of BA line voltage, in the mistake of BC line voltage Failing edge control trigger circuit 16 excision second silicon-controlled 12 of zero-signal;
Terminate reactive compensation order when triggering switching command signal circuit 13 detects, and under the conditions of negative-phase sequence, control Device 14 cuts off second silicon-controlled 12 in the rising edge control trigger circuit 16 of the zero cross signal of BC line voltage, in the mistake of BA line voltage Failing edge control trigger circuit 16 excision first silicon-controlled 11 of zero-signal.
Under above-mentioned switching logic, it is ensured that, can when cutting off first silicon-controlled 11 and excision second silicon-controlled 12 Control the voltage minimum that the both ends of silicon are born.Wherein, the voltage that the silicon-controlled both ends first cut off are born is -800V to 360V, after The voltage that the silicon-controlled both ends of excision are born is 0 to 1200V.
When realizing, silicon-controlled activation bit is pulse controlled by the transmission high-frequency PWM of controller 14, meanwhile, do not having When having driving signal (driving signal of switching), need to guarantee that the pin of controller 14 can only export low level.
It should be noted that controller 14 is using STC12C5608AD model in the utility model embodiment Single-chip microcontroller, PWM output pin can use frequency dividing in clock and determine PWM frequency, and certainly, the utility model embodiment is to controller Form without concrete restriction, can also be DSP, ARM etc..
The minimum switching logic of the voltage that its both ends is born when above content is to guarantee silicon-controlled cutting is described, under The process of quick response is introduced when in face of switching.
In an alternative embodiment of the utility model, the input terminal of zero cross detection circuit and controller is connected, control The output end of device is connect with trigger circuit;
Under the conditions of positive phase sequence, when the both end voltage zero passage for detecting second silicon-controlled 12 by zero cross detection circuit 15 When failing edge, controller 14 passes through the investment of trigger circuit 16 second silicon-controlled 12;After the second silicon-controlled 12 investment, zero passage detection If circuit 15 detects the failing edge of first silicon-controlled 11 both end voltage zero passage in the first preset time, controller 14 Pass through the investment of trigger circuit 16 first silicon-controlled 11;Wherein, if zero cross detection circuit 15 does not detect in the first preset time To the failing edge of first silicon-controlled 11 both end voltage, then the rising edge of BA line voltage zero passage is detected in zero cross detection circuit 15 After postpone the second preset time investment first silicon-controlled 11.
Specifically, the first preset time is 20ms (for the time of a cycle), the latter can be prevented silicon-controlled in this way When investment, the superposition shoved.Second preset time is 6667 microseconds.
In design, it is assumed that be positive phase sequence, when detecting silicon-controlled (the both end voltage zero passage of the i.e. second silicon-controlled 12) of C phase Failing edge when investment C phase silicon-controlled (the second silicon-controlled 12) close C phase silicon control state set, then trigger It counts, and starts simultaneously at the silicon-controlled (failing edge of the both end voltage zero passage of the i.e. first silicon-controlled 11), when detecting A phase of detection A It is silicon-controlled then to put into A phase, and A phase silicon control state set is closed for the failing edge of silicon-controlled both end voltage zero passage, simultaneously will Throw command set intermediate state, guarantee detection next time not further into throwing in silicon-controlled major cycle, when counting reach 2000 with When upper (it is 20 milliseconds corresponding, if it has zero passage to be bound to occur in 20 milliseconds, do not occur yet in one cycle such as, then Can determine whether to be frequent switching, zero passage can be delayed), at this time if detecting the rising edge of BA line voltage zero passage, then postponing 6667 microseconds investment A phase is silicon-controlled, which is by comparing BA line voltage zero passage and the silicon-controlled both end voltage zero passage of A phase Relationship obtain.
In addition, under the conditions of negative-phase sequence, when the both end voltage for detecting first silicon-controlled 11 by zero cross detection circuit 15 When the rising edge of zero passage, controller 14 passes through the investment of trigger circuit 16 first silicon-controlled 11;After the first silicon-controlled 11 investment, mistake If zero detection circuit 15 detects the rising edge of second silicon-controlled 12 both end voltage zero passage in the first preset time, control Device 14 processed passes through the investment of trigger circuit 16 second silicon-controlled 12;Wherein, if zero cross detection circuit 15 is in the first preset time The rising edge of second silicon-controlled 12 both end voltage is not detected, then detects BA line voltage zero passage in zero cross detection circuit 15 Postpone the second preset time investment second silicon-controlled 12 after failing edge.
Here it no longer describes in detail to the process of negative-phase sequence.
In an alternative embodiment of the utility model, trigger board further include: non-isolated power supply circuit and isolated power supply Circuit, non-isolated power supply circuit are connect with trigger board, and isolated power supply circuit is connect with zero cross detection circuit;
Non-isolated power supply circuit is used to provide electric energy for the circuit in trigger board in addition to zero cross detection circuit 15;
Isolated power supply circuit is used to provide electric energy for zero cross detection circuit 15.
In the utility model embodiment, silicon controlled switching device uses the power supply mode of 12V power supply, 12V power supply Power supply generates non-isolated 5V power supply by power supply chip, is powered for the main chip in trigger board.Meanwhile can also it pass through Square-wave generator generates the 5V power supply being isolated with voltage-multiplying circuit, provides electric energy for zero passage detection.
Optionally, with reference to Fig. 3, the device further include: radiator 17 and blower 18;Trigger board further include: temperature detection electricity Road 19 and draught fan control circuit 20;Wherein, the input terminal of temperature sensing circuit is connect with radiator, the output of temperature sensing circuit End is connect with controller, and controller is connect with draught fan control circuit, and draught fan control circuit is connect with blower;
Temperature sensing circuit 19 is used to detect the temperature of radiator 17, and the temperature for the radiator 17 that will test is sent To controller 14, wherein when controller 14 determines that the temperature for obtaining radiator 17 is greater than the first temperature threshold, pass through blower control Circuit 20 processed controls blower 18 and opens;When controller 14 determines that the temperature for obtaining radiator 17 is greater than second temperature threshold value, control Device 14 processed controls the silicon-controlled switching that do not execute and acts.
Specifically, the temperature of radiator 17 is detected by NTC thermistor, when temperature is higher than 50 degree of (i.e. first temperature thresholds Value) when, controller 14 controls blower 18 by draught fan control circuit 20 and starts.When the temperature for detecting radiator 17 is higher than 80 degree When (i.e. second temperature threshold value), switching is not silicon-controlled receiving triggering command signal for the judgement of controller 14, and protection is controllable Silicon will not be damaged because of overheat.
In an alternative embodiment of the utility model, with reference to Fig. 4, trigger board further include: power failure detection circuit 21;Wherein, power failure detection circuit 21 includes: voltage-stabiliser tube and triode, and the anode of voltage-stabiliser tube passes through driving resistance and three poles The base stage of pipe connects;
When supply voltage is less than the pressure stabilizing value of voltage-stabiliser tube, triode cut-off, and then power failure signal is generated, and will be electric Source fault-signal is sent to controller 14, so that controller 14 controls the silicon-controlled switching that do not execute and acts.
In an alternative embodiment of the utility model, with reference to Fig. 4, trigger board further include: over-voltage detection circuit 22, mistake Pressure detection circuit is connect with controller;
Over-voltage detection circuit 22 is for detecting network voltage, wherein when network voltage is higher than preset value, over-voltage detection electricity Road generates over-voltage signal, and over-voltage signal is sent to controller 14, so that controller 14 controls silicon-controlled stop working.
Specifically, over-voltage detection circuit 22 is by current-limiting resistance, rectification circuit, bleeder circuit, comparator and optocoupler composition.Electricity Net voltage limits current in the normal range by current-limiting resistance, rectifies grid ac voltage by diode rectifier circuit At DC voltage, DC voltage is divided by bleeder circuit, then compared with reference voltage, when the electricity that bleeder circuit divides When pressure is higher than reference voltage, illustrate that network voltage is higher than preset value, comparator exports high level triggering optocoupler conducting, generates failure Signal, it is silicon-controlled to stop working.The effect of the circuit is, when network voltage is more than preset value, avoids silicon-controlled because excessively high Shutdown voltage and cause to puncture, be auxiliary protection circuit.
In an alternative embodiment of the utility model, positive phase sequence and negative-phase sequence are detected according to zero cross detection circuit 15 Relationship between the BA line voltage arrived and BC line voltage determines.
Specifically, judging phase order detects level change reality between obtained BA and BC line voltage by zero cross detection circuit 15 It is existing.When voltage between voltage delay BC between BA, controller 14 is judged as positive sequence;When voltage between the advanced BC of voltage between BA When, controller 14 is judged as negative phase-sequence.Controller 14 carries out different switching logics according to positive sequence negative phase-sequence.The hardware circuit is for working as When equipment phase sequence wrong, not will lead to it is silicon-controlled shutdown and overvoltage damage.
Quick-switching may be implemented in the silicon controlled switching device of the utility model, and response speed reaches within 50ms, shutdown When silicon-controlled, voltage when silicon-controlled both end voltage is than traditional silicon-controlled shutdown reduces 300V or so, and has judging phase order, Overtemperature prote, power faiture safe, the defencive functions such as system overvoltage protection.
Silicon controlled switching device in the utility model has the advantage that
(1) trigger signal is issued when silicon-controlled both end voltage is zero, reduces shoving for investment moment;
(2) give switching instruction after, if can't detect the zero cross signal at silicon-controlled both ends, according to line voltage zero passage into Row switching, double control guarantee the quick response of silicon-controlled work;
(3) time when control AC two-phase cuts off silicon-controlled, it is ensured that silicon-controlled both end voltage will not be superimposed, to reduce The voltage at silicon-controlled both ends when turning off silicon-controlled;
(4) temperature sensing circuit 19 and draught fan control circuit 20 is added, when temperature is higher than 50 degree, the starting of blower 18 is can Control silicon heat dissipation;When temperature is higher than 80 degree, silicon-controlled break-off avoids silicon-controlled damage;
(5) over-voltage detection circuit 22 is added, when system voltage is excessively high, silicon-controlled break-off avoids overtension from drawing Play silicon-controlled damage;
(6) power faiture safe is added, it is silicon-controlled to stop working when supply voltage is lower than certain value, avoid power supply from driving Dynamic deficiency, silicon-controlled malfunction, to cause silicon-controlled damage;
(7) it joined judging phase order, even if when phase sequence wrong, it also can normal switching.
Embodiment two:
A kind of network system, the silicon controlled switching device being provided in the network system in above-described embodiment one.
In addition, in the description of the utility model embodiment unless specifically defined or limited otherwise, term " installation ", " connected ", " connection " shall be understood in a broad sense, for example, it may be being fixedly connected, may be a detachable connection, or integrally connect It connects;It can be mechanical connection, be also possible to be electrically connected;It can be directly connected, can also indirectly connected through an intermediary, it can To be the connection inside two elements.For the ordinary skill in the art, above-mentioned term can be understood with concrete condition Concrete meaning in the present invention.
It is in the description of the present invention, it should be noted that term " center ", "upper", "lower", "left", "right", " perpendicular Directly ", the orientation or positional relationship of the instructions such as "horizontal", "inner", "outside" is to be based on the orientation or positional relationship shown in the drawings, and is only For ease of description the utility model and simplify description, rather than the device or element of indication or suggestion meaning must have it is specific Orientation, be constructed and operated in a specific orientation, therefore should not be understood as limiting the present invention.In addition, term " the One ", " second ", " third " are used for descriptive purposes only and cannot be understood as indicating or suggesting relative importance.
Finally, it should be noted that embodiment described above, only specific embodiment of the present utility model, to illustrate this The technical solution of utility model, rather than its limitations, the protection scope of the utility model is not limited thereto, although referring to aforementioned The utility model is described in detail in embodiment, those skilled in the art should understand that: it is any to be familiar with this skill The technical staff in art field within the technical scope disclosed by the utility model, still can be to skill documented by previous embodiment Art scheme modify or can readily occur in variation or equivalent replacement of some of the technical features;And these modifications, Variation or replacement, the spirit and model of the utility model embodiment technical solution that it does not separate the essence of the corresponding technical solution It encloses, should be covered within the scope of the utility model.Therefore, the protection scope of the utility model is answered described is wanted with right Subject to the protection scope asked.

Claims (10)

1. a kind of silicon controlled switching device characterized by comprising trigger board silicon-controlled and with the silicon-controlled connection;Institute Stating trigger board includes: triggering switching command signal circuit, controller, zero cross detection circuit and trigger circuit;
The silicon-controlled quantity is two, and it is first silicon-controlled that one of them is silicon-controlled, and it is second controllable that another is silicon-controlled Silicon, the described first silicon-controlled input terminal are connect by A phase winding displacement with power grid, and the described second silicon-controlled input terminal passes through C phase Winding displacement is connect with power grid, and the described first silicon-controlled output end is connect with the first end of the first reactance, and described second is silicon-controlled Output end is connect with the first end of the second reactance, and one end of B phase winding displacement is connect with power grid, the other end and the third electricity of B phase winding displacement Anti- first end connection, the second end of first reactance, the second end of second reactance and the third reactance second End is connect with three angle points of the capacitor of delta connection respectively;
Wherein, reactive compensation order is triggered when the triggering switching command signal circuit detects, and passes through the zero passage detection When circuit detects the silicon-controlled both end voltage zero cross signal, the controller sends driving pulse, by the triggering First silicon-controlled and described second controlled silicon conducting described in circuit drives;
Terminate reactive compensation order when the triggering switching command signal circuit detects, and under the conditions of positive phase sequence, the control Device processed is silicon-controlled in the rising edge control trigger circuit excision described first of the zero cross signal of BA line voltage, in BC line voltage The failing edge of zero cross signal to control trigger circuit excision described second silicon-controlled;
Terminate reactive compensation order when the triggering switching command signal circuit detects, and under the conditions of negative-phase sequence, the control Device processed is silicon-controlled in the rising edge control trigger circuit excision described second of the zero cross signal of BC line voltage, in BA line voltage The failing edge of zero cross signal to control trigger circuit excision described first silicon-controlled.
2. silicon controlled switching device according to claim 1, which is characterized in that the zero cross detection circuit and the control The input terminal of device connects, and the output end of the controller is connect with the trigger circuit;
Under the conditions of positive phase sequence, when detecting the described second silicon-controlled both end voltage zero passage by the zero cross detection circuit When failing edge, the controller is silicon-controlled by trigger circuit investment described second;After the described second silicon-controlled investment, If the zero cross detection circuit detects the decline of the described first silicon-controlled both end voltage zero passage in the first preset time Along when, the controller is put into described first silicon-controlled by the trigger circuit;Wherein, if the zero cross detection circuit exists The failing edge of the described first silicon-controlled both end voltage is not detected in first preset time, then in the zero passage detection electricity Road detects that postpone the second preset time investment described first after the rising edge of BA line voltage zero passage silicon-controlled.
3. silicon controlled switching device according to claim 1, which is characterized in that
Under the conditions of negative-phase sequence, when detecting the described first silicon-controlled both end voltage zero passage by the zero cross detection circuit When rising edge, the controller is silicon-controlled by trigger circuit investment described first;After the described first silicon-controlled investment, If the zero cross detection circuit detects the rising of the described second silicon-controlled both end voltage zero passage in the first preset time Along when, the controller is put into described second silicon-controlled by the trigger circuit;Wherein, if the zero cross detection circuit exists The rising edge of the described second silicon-controlled both end voltage is not detected in first preset time, then in the zero passage detection electricity Road detects that postpone the second preset time investment described second after the failing edge of BA line voltage zero passage silicon-controlled.
4. silicon controlled switching device according to claim 1, which is characterized in that the trigger board further include: non-isolated electricity Source circuit, the non-isolated power supply circuit are connect with the trigger board;
The non-isolated power supply circuit is used to provide electric energy for the circuit in the trigger board in addition to the zero cross detection circuit.
5. silicon controlled switching device according to claim 1, which is characterized in that the trigger board further include: isolated power supply Circuit, the isolated power supply circuit are connect with the zero cross detection circuit;
The isolated power supply circuit is used to provide electric energy for the zero cross detection circuit.
6. silicon controlled switching device according to claim 1, which is characterized in that described device further include: radiator and wind Machine;The trigger board further include: temperature sensing circuit and draught fan control circuit;Wherein, the input terminal of the temperature sensing circuit It is connect with the radiator, the output end of the temperature sensing circuit is connect with the controller, the controller and the wind The connection of machine control circuit, the draught fan control circuit are connect with the blower;
The temperature sensing circuit is used to detect the temperature of the radiator, and the temperature hair for the radiator that will test It send to the controller, wherein when the controller determines that the temperature for obtaining the radiator is greater than the first temperature threshold, lead to It crosses the draught fan control circuit and controls the blower unlatching;When the controller determines that the temperature for obtaining the radiator is greater than the When two temperature thresholds, the controller control silicon-controlled switching that do not execute is acted.
7. silicon controlled switching device according to claim 1, which is characterized in that the trigger board further include: power failure Detection circuit;Wherein, the power failure detection circuit includes: voltage-stabiliser tube and triode, and the anode of the voltage-stabiliser tube passes through drive Dynamic resistance is connect with the base stage of the triode;
When supply voltage is less than the pressure stabilizing value of the voltage-stabiliser tube, the triode cut-off, and then power failure signal is generated, and The power failure signal is sent to the controller, so that the controller control silicon-controlled switching that can not execute Make.
8. silicon controlled switching device according to claim 1, which is characterized in that the trigger board further include: over-voltage detection Circuit, the over-voltage detection circuit are connect with the controller;
The over-voltage detection circuit is for detecting network voltage, wherein when the network voltage is higher than preset value, the over-voltage Detection circuit generates over-voltage signal, and the over-voltage signal is sent to controller, so that controller control is described controllable Silicon stops working.
9. silicon controlled switching device according to claim 1, which is characterized in that the positive phase sequence and the negative-phase sequence according to Relationship between the zero cross detection circuit BA line voltage detected and BC line voltage determines.
10. a kind of network system, which is characterized in that be provided with any one of the claims 1 to 9 institute in the network system The silicon controlled switching device stated.
CN201920524609.7U 2019-04-17 2019-04-17 Silicon controlled switching device and network system Active CN209488185U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201920524609.7U CN209488185U (en) 2019-04-17 2019-04-17 Silicon controlled switching device and network system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201920524609.7U CN209488185U (en) 2019-04-17 2019-04-17 Silicon controlled switching device and network system

Publications (1)

Publication Number Publication Date
CN209488185U true CN209488185U (en) 2019-10-11

Family

ID=68135434

Family Applications (1)

Application Number Title Priority Date Filing Date
CN201920524609.7U Active CN209488185U (en) 2019-04-17 2019-04-17 Silicon controlled switching device and network system

Country Status (1)

Country Link
CN (1) CN209488185U (en)

Similar Documents

Publication Publication Date Title
CN104218530B (en) A kind of hardware protection circuit of active PFC
CN102419562B (en) Control method of relay with inductive load, and household appliance
CN105762767B (en) Hardware protection circuit based on APFC
CN103745883B (en) A kind of combined type Arcless AC Contactor with transistors breakdown diagnostic function
CN101841292B (en) Direct-current motor driver of wind generating variable-propeller control system
CN108649550B (en) Power-down protection control method and device and permanent magnet synchronous motor control system
CN205070777U (en) Switching power supply circuit
US8792215B2 (en) Switch unit and power generation system thereof
CN108736446B (en) Guard method, protection system and the permanent magnet synchronous motor of permanent magnet synchronous motor
WO2016192160A1 (en) Device and method for protecting voltage surge of pec circuit in variable-frequency household electric apparatus
CN110233566A (en) Drive control circuit and household appliance
CN107888059A (en) A kind of surge restraint circuit and Surge suppression method
CN104767176A (en) Single-cycle detection and protection method for peak current of brushless direct current motor
CN102175905B (en) Zero crossing detecting circuit and device and warm air blower
CN201708754U (en) DC motor driver of wind power generation active pitch control system
CN209488185U (en) Silicon controlled switching device and network system
CN201708756U (en) Driving device of series excited DC motor of variable paddle control system
CN109640424A (en) A kind of electromagnetic heating system method for detecting abnormality, device and readable storage medium storing program for executing
CN202150960U (en) Load self-adapting medium-frequency electromagnetic induction heating energy-saving device
CN101860311A (en) Drive device of series DC machine for pitch control system
CN102957157B (en) Silicon controlled composite switch of intelligent zero-crossing switching
CN109425777B (en) Electromagnetic heating equipment and power failure detection method and device thereof
CN103023044B (en) Combination switch with intelligent zero-crossing switching function
CN105896563B (en) Zero-crossing trigger control circuit of anti-parallel thyristor split-phase switching capacitor
CN2810090Y (en) An electromagnetic oven controller with novel protection circuit

Legal Events

Date Code Title Description
GR01 Patent grant
GR01 Patent grant