CN209471994U - A kind of light emitting diode - Google Patents
A kind of light emitting diode Download PDFInfo
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- CN209471994U CN209471994U CN201920641885.1U CN201920641885U CN209471994U CN 209471994 U CN209471994 U CN 209471994U CN 201920641885 U CN201920641885 U CN 201920641885U CN 209471994 U CN209471994 U CN 209471994U
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Abstract
The utility model provides a kind of light emitting diode, and by the setting in the current blocking area, through-hole and its arrangement regulation of the Multifunctional layered, through-hole first, with oblique side wall significantly improves light-emitting angle in conjunction with the metallic mirror；Secondly, the metallic mirror forms Ohmic contact by the through-hole and the second conductive layer, the arrangement regulation of the through-hole: along the current blocking area edge on the extending direction of Multifunctional layered periphery, the base area of the through-hole is gradually increased or the laying of through-hole is gradually intensive, can effectively guide the conduction of electric current；Then, the first electrode and the current blocking area are arranged concentrically on the direction perpendicular to the substrate, so that the electric current effect of first electrode reaches most preferably, obtain higher luminous efficiency.
Description
Technical field
The utility model belongs to field of semiconductor illumination, in particular to a kind of light emitting diode.
Background technique
Light emitting diode has low-power consumption, size small and high reliability, is comparatively fast sent out as main light source
Exhibition.By being extended rapidly using field for light emitting diode in recent years, and improving the brightness of light emitting diode and power becomes it
Key factor.
However, still there are some problems in traditional inversion chip structure: the beam angle for the light such as escaped from chip surface
Degree is limited, and being inverted chip structure is based on vertical chip structure, and top center is provided with welding stage electrode, and there are biggish gears
Light area.For the shading for reducing welding stage electrode, the most common method is utilized in electrode underlying region setting one in the prior art
A current barrier region (dielectric layer) stops the transmittability of electric current immediately below welding stage electrode, improves non-welding stage electrode district whereby
The current density in domain and the luminous power for increasing active layer reduce the light-blocking problem of welding stage electrode.But due to exhausted using dielectric layer
Edge, dielectric layer belong to oxide, the presence of these oxide skin(coating)s, hamper uniform phase interaction between semiconductor and metal layer
With.
In view of this, the present inventor specially devises a kind of light emitting diode, thus this case generates.
Utility model content
The purpose of this utility model is to provide a kind of light emitting diodes, and to achieve the goals above, the utility model is adopted
Technical solution is as follows:
A kind of light emitting diode includes:
One electrically-conductive backing plate, with positive and negative two surface；
One light emitting structure, by metal bonding layer face-down bonding on the front of the electrically-conductive backing plate；The light-emitting junction
Structure includes the first conductive layer, active layer, the second conductive layer, the Multifunctional layered, metallic mirror stacked gradually in substrate surface；Institute
It states and is equipped with a current blocking area and several through-holes with oblique side wall in Multifunctional layered, each through-hole surround and is laid in the electricity
Resistance periphery is flowed, and appears the part of the surface of second conductive layer；The surface of the Multifunctional layered and the through-hole side wall
Deposit the metallic mirror；The metal bonding layer is for being bonded the metallic mirror and electrically-conductive backing plate；
It is laminated in the second electrode of the electrically-conductive backing plate reverse side；
It is laminated in the first electrode that first conductive layer deviates from the active layer side；The first electrode and the electricity
Stream Resistance is arranged concentrically on the direction perpendicular to the substrate.
Preferably, along the current blocking area edge on the extending direction of Multifunctional layered periphery, the bottom surface of the through-hole
Area is gradually increased or the laying of the through-hole is gradually intensive.
Preferably, the area in the current blocking area is greater than the welding stage area of the first electrode.
Preferably, the angle of the oblique side wall of each through-hole and second conductive layer surface is 15-50 degree, including endpoint
Value.
Preferably, the material system of the Multifunctional layered includes the material system different from second conductive layer.
Preferably, the material system of first conductive layer includes the AlGaInP for mixing Si, and the active layer includes
AlGaInP/AlGaInP multi-quantum pit structure, the material system of the second conductive layer includes the AlGaInP for mixing Mg, described multi-functional
The material system of layer includes undoped arsenide.
Preferably, the material system of the Multifunctional layered includes undoped AlGaAs.
Preferably, the Multifunctional layered with a thickness of D1, second conductive layer with a thickness of D2, D2≤D1≤3*D2.
A kind of production method of light emitting diode is used to prepare light emitting diode as described above, the production method packet
Include following steps:
Step S1, a substrate is provided, over the substrate successively grown buffer layer, the first conductive layer, active layer, second conductive
Layer, the buffer layer, the first conductive layer, active layer, the second conductive layer constitute the epitaxial layer of the light emitting diode；Described first
The material system of conductive layer includes the AlGaInP for mixing Si, and the active layer includes AlGaInP/AlGaInP multi-quantum pit structure,
The material system of second conductive layer includes the AlGaInP for mixing Mg, and the material system of the Multifunctional layered includes undoped arsenic
Object, such as AlGaAs.
Step S2, by standard lithographic, mask, etching process, formed on the Multifunctional layered current blocking area and
Several through-holes with oblique side wall；Each through-hole appears the part of the surface of second conductive layer, and surround and be laid in institute
Current blocking area periphery is stated, and along current blocking area edge on the extending direction of Multifunctional layered periphery, the base area of through-hole
It is gradually increased or the laying of through-hole is gradually intensive；
Step S3, the part of the surface deposited metal reflecting mirror appeared on the Multifunctional layered surface and the second conductive layer, makes
The Multifunctional layered, metallic mirror and the second conductive layer form Ohmic contact；
Step S4, after above-mentioned steps, light emitting structure is formed；
Step S5, the front of the light emitting structure and electrically-conductive backing plate is formed by bonding by metal bonding layer；
Step S6, to above structure using laser lift-off or wet etching or dry method etch technology, remove the substrate and
Buffer layer；
Step S7, first conductive layer surface using vapor deposition or sputtering process formed first electrode, described first
Electrode and the current blocking area are arranged concentrically on the direction perpendicular to the substrate；
Step S8, second electrode is formed using vapor deposition or sputtering process in the reverse side of the electrically-conductive backing plate.
It can be seen via above technical scheme that light emitting diode provided by the utility model, passes through the Multifunctional layered
The setting in current blocking area, through-hole and its arrangement regulation, through-hole first, with oblique side wall make in conjunction with the metallic mirror
Light-emitting angle significantly improves；
Secondly, the metallic mirror forms Ohmic contact, the row of the through-hole by the through-hole and the second conductive layer
Column rule: along the current blocking area edge on the extending direction of Multifunctional layered periphery, the base area of the through-hole is gradually
Increase or the laying of through-hole is gradually intensive, can effectively guide the conduction of electric current；
Then, the first electrode and the current blocking area are arranged concentrically, make on the direction perpendicular to the substrate
The electric current effect for obtaining first electrode reaches most preferably, obtains higher luminous efficiency；
Again, the Multifunctional layered with a thickness of D1, second conductive layer with a thickness of D2, D2≤D1≤3*D2,
Convenient for the density setting of through-hole and while spread reflection area, can effectively prevent epitaxial layer, Multifunctional layered, metallic mirror it
Between removing；
Finally, the material system of Multifunctional layered is different from the material system of second conductive layer, has Multifunctional layered
Certain anti-metal diffusion function, and it is higher than traditional dielectric layer with the binding force of metal, light emitting diode can be effectively improved
Reliability.
Detailed description of the invention
In order to illustrate the embodiment of the utility model or the technical proposal in the existing technology more clearly, below will be to embodiment
Or attached drawing needed to be used in the description of the prior art is briefly described, it should be apparent that, the accompanying drawings in the following description is only
It is the embodiments of the present invention, for those of ordinary skill in the art, without creative efforts, also
Other attached drawings can be obtained according to the attached drawing of offer.
Fig. 1 is the structural schematic diagram of light emitting diode provided by the embodiment of the utility model；
Fig. 2 is schematic cross-section of the light emitting diode shown in FIG. 1 along AA line；
Fig. 3 .1- Fig. 3 .7 is to make structural schematic diagram corresponding to the method for light emitting diode shown in FIG. 1；
Symbol description in figure: 1, substrate, the 2, first conductive layer, 3, active layer, the 4, second conductive layer, 5, Multifunctional layered, 51,
Through-hole, 52, current blocking area, 6, metallic mirror, 7, metal bonding layer, 8, electrically-conductive backing plate, 9, first electrode, the 10, second electricity
Pole, 11, buffer layer.
Specific embodiment
To be more clear the content of the utility model, the content of the utility model is made furtherly with reference to the accompanying drawing
It is bright.The utility model is not limited to the specific embodiment.Based on the embodiments of the present invention, those of ordinary skill in the art
Every other embodiment obtained without making creative work, fall within the protection scope of the utility model.
A kind of light emitting diode is present embodiments provided, as shown in Figure 1, 2, comprising:
One electrically-conductive backing plate 8, with positive and negative two surface；
One light emitting structure, by 7 face-down bonding of metal bonding layer on the front of electrically-conductive backing plate 8；Light emitting structure includes
In the first conductive layer 2, active layer 3, the second conductive layer 4, the Multifunctional layered 5, metallic mirror 6 that 1 surface of substrate stacks gradually；It is more
A current blocking area 52 and several through-holes 51 with oblique side wall are equipped in functional layer 5, each through-hole 51 is hindered around electric current is laid in
52 periphery of area is kept off, and appears the part of the surface of the second conductive layer 4；The surface of Multifunctional layered 5 and 51 side wall deposition metal of through-hole are anti-
Penetrate mirror 6；Metal bonding layer 7 is used for bonded metal reflecting mirror 6 and electrically-conductive backing plate 8；
It is laminated in the second electrode 10 of 8 reverse side of electrically-conductive backing plate；
It is laminated in the first electrode 9 that the first conductive layer 2 deviates from 3 side of active layer；First electrode 9 and current blocking area 52,
On the direction perpendicular to substrate 1, it is arranged concentrically.
Along 52 edge of current blocking area on the extending direction of 5 periphery of Multifunctional layered, the base area of through-hole 51 gradually increases
Big or through-hole 51 laying is gradually intensive.
The area in current blocking area 52 is greater than the welding stage area of first electrode 9.
The angle α on 4 surface of oblique side wall and the second conductive layer of each through-hole 51 is 15-50 degree, including endpoint value.
The material system of Multifunctional layered 5 includes the material system different from the second conductive layer 4.
The material system of first conductive layer 2 includes the AlGaInP for mixing Si, and active layer 3 includes AlGaInP/AlGaInP volume
Sub- well structure, the material system of the second conductive layer 4 include the AlGaInP for mixing Mg, and the material system of Multifunctional layered 5 includes undoped
AlGaAs.
Multifunctional layered 5 with a thickness of D1, the second conductive layer 4 with a thickness of D2, D2≤D1≤3*D2.
A kind of production method of light emitting diode is used to prepare light emitting diode as above as shown in Fig. 3 .1 to 3.7, system
Make method the following steps are included:
Step S1, a substrate 1 is provided, successively grown buffer layer 11, the first conductive layer 2, active layer 3, the on the substrate 1
Two conductive layers 4, buffer layer 11, the first conductive layer 2, active layer 3, the second conductive layer 4 constitute the epitaxial layer of light emitting diode；
Step S2, by standard lithographic, mask, etching process, if formed on Multifunctional layered 5 a current blocking area 52 and
The dry through-hole 51 with oblique side wall；Each through-hole 51 appears the part of the surface of the second conductive layer 4, and surround and be laid in current blocking
52 periphery of area, and along 52 edge of current blocking area on the extending direction of 5 periphery of Multifunctional layered, the base area of through-hole 51 is gradually
Increase or the laying of through-hole 51 is gradually intensive；
Step S3, the part of the surface deposited metal reflecting mirror 6 appeared on 5 surface of Multifunctional layered and the second conductive layer 4, makes more
Functional layer 5, metallic mirror 6 and the second conductive layer 4 form Ohmic contact；
Step S4, after above-mentioned steps, light emitting structure is formed；
Step S5, the front of light emitting structure and electrically-conductive backing plate 8 is formed by bonding by metal bonding layer 7；
Step S6, substrate 1 and buffering are removed using laser lift-off or wet etching or dry method etch technology to above structure
Layer 11；
Step S7, first electrode 9,9 He of first electrode are formed using vapor deposition or sputtering process on the surface of the first conductive layer 2
Current blocking area 52 is arranged concentrically on the direction perpendicular to substrate 1；
Step S8, second electrode 10 is formed using vapor deposition or sputtering process in the reverse side of electrically-conductive backing plate 8.
The material system of first conductive layer 2 includes the AlGaInP for mixing Si, and active layer 3 includes AlGaInP/AlGaInP volume
Sub- well structure, the material system of the second conductive layer 4 include the AlGaInP for mixing Mg, and the material system of Multifunctional layered 5 includes undoped
AlGaAs.
It can be seen via above technical scheme that light emitting diode provided in this embodiment, is hindered by the electric current of Multifunctional layered 5
The setting in area 52, through-hole 51 and its arrangement regulation is kept off, first, the through-hole 51 with oblique side wall makes to obtain in conjunction with metallic mirror 6
Angular significantly improves；Secondly, metallic mirror 6 forms Ohmic contact, the row of through-hole 51 by through-hole 51 and the second conductive layer 4
Column rule: along 52 edge of current blocking area on the extending direction of 5 periphery of Multifunctional layered, the base area of through-hole 51 is gradually increased
Or the laying of through-hole 51 is gradually intensive, can effectively guide the conduction of electric current；Then, first electrode 9 and current blocking area 52 are hanging down
It directly on the direction of substrate 1, is arranged concentrically, so that the electric current effect of first electrode 9 reaches most preferably, obtains higher luminous effect
Rate；Again, multi-functional 5 layers with a thickness of D1, the second conductive layer 4 with a thickness of D2, D2≤D1≤3*D2, convenient for through-hole 51
Density setting and while spread reflection area can effectively prevent epitaxial layer, Multifunctional layered 5, the stripping between metallic mirror 6
From；Finally, the material system of Multifunctional layered 5 is different from the material system of the second conductive layer 4, has Multifunctional layered 5 centainly
Anti- metal diffusion function, and it is higher than traditional dielectric layer with the binding force of metal, the reliable of light emitting diode can be effectively improved
Property.
The product form and style of above-described embodiment and schema and non-limiting the utility model, any technical field
The appropriate changes or modifications that those of ordinary skill does it all should be regarded as the patent category for not departing from the utility model.
Claims (8)
1. a kind of light emitting diode characterized by comprising
One electrically-conductive backing plate, with positive and negative two surface；
One light emitting structure, by metal bonding layer face-down bonding on the front of the electrically-conductive backing plate；The light emitting structure packet
Include the first conductive layer, active layer, the second conductive layer, the Multifunctional layered, metallic mirror stacked gradually in substrate surface；It is described more
A current blocking area and several through-holes with oblique side wall are equipped in functional layer, each through-hole is hindered around the electric current is laid in
Area periphery is kept off, and appears the part of the surface of second conductive layer；The surface of the Multifunctional layered and through-hole side wall deposition
The metallic mirror；The metal bonding layer is for being bonded the metallic mirror and electrically-conductive backing plate；
It is laminated in the second electrode of the electrically-conductive backing plate reverse side；
It is laminated in the first electrode that first conductive layer deviates from the active layer side；The first electrode and electric current resistance
Gear area is arranged concentrically on the direction perpendicular to the substrate.
2. light emitting diode according to claim 1, it is characterised in that: along the current blocking area edge to Multifunctional layered
On the extending direction of periphery, the base area of the through-hole is gradually increased.
3. light emitting diode according to claim 1, it is characterised in that: along the current blocking area edge to Multifunctional layered
On the extending direction of periphery, the laying of the through-hole is gradually intensive.
4. light emitting diode according to claim 1, it is characterised in that: the area in the current blocking area is greater than described the
The welding stage area of one electrode.
5. light emitting diode according to claim 1, it is characterised in that: the oblique side wall of each through-hole is led with described second
The angle on electric layer surface is 15-50 degree, including endpoint value.
6. light emitting diode according to claim 1, it is characterised in that: the material system of the Multifunctional layered includes difference
In the material system of second conductive layer.
7. light emitting diode according to claim 6, it is characterised in that: the material system of first conductive layer includes mixing
The AlGaInP of Si, the active layer include AlGaInP/AlGaInP multi-quantum pit structure, the material system packet of the second conductive layer
The AlGaInP for mixing Mg is included, the material system of the Multifunctional layered includes undoped arsenide.
8. light emitting diode according to claim 1, it is characterised in that: the Multifunctional layered with a thickness of D1, described
Two conductive layers with a thickness of D2, D2≤D1≤3*D2.
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| CN201920641885.1U CN209471994U (en) | 2019-05-07 | 2019-05-07 | A kind of light emitting diode |
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| CN201920641885.1U CN209471994U (en) | 2019-05-07 | 2019-05-07 | A kind of light emitting diode |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109980063A (en) * | 2019-05-07 | 2019-07-05 | 厦门乾照半导体科技有限公司 | A kind of light emitting diode and preparation method thereof |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109980063A (en) * | 2019-05-07 | 2019-07-05 | 厦门乾照半导体科技有限公司 | A kind of light emitting diode and preparation method thereof |
| CN109980063B (en) * | 2019-05-07 | 2024-05-10 | 厦门乾照半导体科技有限公司 | Light-emitting diode and manufacturing method thereof |
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