CN209434010U - Stacked transformer device structure on silicon chip - Google Patents

Abstract

The utility model provides stacked transformer device structure on a kind of silicon chip comprising silicon substrate layer, lower metal layer and transformer coil structure；The transformer coil structure includes main line coil structures, second insulating layer and secondary coil structure；Secondary coil structure includes the first outer ring portion, the second outer ring portion, inner ring portion and interconnecting piece；First outer ring portion is connect with the one end in inner ring portion, and the other end in inner ring portion is connect by interconnecting piece with second outer ring portion；Interconnecting piece setting is on metal layer, interconnecting piece is staggered with main line coil structures where main line coil structures.The setting that stacked transformer device structure passes through secondary coil structure and interconnecting piece on the silicon chip of the utility model, it is ensured that the normal work of main coil metal layer improves the quality factor and the coefficient of coup of stacked transformer.

Description

Stacked transformer device structure on silicon chip

Technical field

The utility model relates to si-substrate integrated circuit circuit design fields, more particularly to stacked transformation on a kind of silicon chip Device structure.

Background technique

Transformer can be generally arranged in stacked transformer device structure in the metal layer at top of silicon chip on existing silicon chip Main coil metal layer and secondary coil metal layer, general secondary coil metal layer has multiple subcoils, as occurred between subcoil Crossover node then can be bridged in the region on secondary coil metal layer with crossover node using main coil metal layer.But by Inadequate in the thickness direction level of main coil metal layer, secondary coil is bridged using main coil metal layer, influences whether main line The coil thickness of circle, to will affect the normal work of main coil metal layer, and then influence stacked transformer Q (quality because Son) value and K (coefficient of coup) value.

Therefore stacked transformer device structure is asked with the poor technology of quality factor and the coefficient of coup on existing silicon chip Topic.

Utility model content

The utility model embodiment provides stacked on a kind of silicon chip with the higher quality factor and the coefficient of coup and becomes Depressor structure；It is asked with solving the quality factor of stacked transformer device structure on existing silicon chip and the poor technology of the coefficient of coup Topic.

The utility model embodiment provides stacked transformer device structure on a kind of silicon chip comprising:

Silicon substrate layer；

Lower metal layer is arranged on the silicon chip, for constituting metal connector device；

Transformer coil structure is arranged in the lower metal layer by the first insulating layer；Comprising:

Main line coil structures, setting on the first insulating layer, including main coil input interface, main coil output interface with And main coil intermediary interface；

Second insulating layer is arranged on the main line coil structures, is arranged in the main line coil structures and secondary coil structure Between；And

The secondary coil structure is arranged on the second insulating layer, including the output of secondary coil input interface, secondary coil connects Mouth and secondary coil intermediary interface；

Wherein the secondary coil structure includes the first outer ring portion, the second outer ring portion, inner ring portion and interconnecting piece；Described first Outer ring portion is connect with the one end in the inner ring portion, and the other end in the inner ring portion passes through the interconnecting piece and second outer ring portion Connection；Interconnecting piece setting is on metal layer, the interconnecting piece and the main line coil structures are wrong where the main line coil structures It opens.

In silicon substrate multiple pieces piling type transformer device structure described in the utility model, the main line coil structures are to be open with one Class circle structure, the main coil input interface and main coil output interface of the main line coil structures be arranged at the main coil The open at one end of structure；The opening of the main line coil structures is arranged in respect to one in the main coil intermediary interface of the main line coil structures End.

In silicon substrate multiple pieces piling type transformer device structure described in the utility model, the first outer ring portion of the secondary coil structure and Second outer ring portion constitutes the class circle structure with the first outward opening and the second outward opening, and the inner ring portion of the secondary coil, which is constituted, to be had The class circle structure of one inner opening；Wherein first outward opening and second outward opening are oppositely arranged；The inner opening with The position of second outward opening is identical；

The secondary coil input interface and secondary coil output interface of the secondary coil structure are arranged at the secondary coil structure First outward opening one end, the inner opening phase of the secondary coil structure is arranged in the secondary coil intermediary interface of the secondary coil structure To one end.

In silicon substrate multiple pieces piling type transformer device structure described in the utility model, the secondary coil intermediary interface is located at described time Between coil input interface and the secondary coil output interface.

In silicon substrate multiple pieces piling type transformer device structure described in the utility model, the first company is provided in the second insulating layer Socket part through-hole and second connecting portion through-hole, the other end in the inner ring portion pass through the first connecting portion through-hole and interconnecting piece one End connection, second outer ring portion are connected by the other end of the second connecting portion through-hole and interconnecting piece.

In silicon substrate multiple pieces piling type transformer device structure described in the utility model, the secondary coil structure is in the main line loop knot Structure projection on the metal layer be located in the main line coil structures.

In silicon substrate multiple pieces piling type transformer device structure described in the utility model, the main line coil structures are copper wire coil structures, The secondary coil structure is aluminum steel coil structures, and the interconnecting piece is copper interconnecting piece.

In silicon substrate multiple pieces piling type transformer device structure described in the utility model, the connecting portion is in the main line coil structures Inside.

The utility model embodiment also provides a kind of silicon substrate multiple pieces piling type transformer device structure comprising:

Silicon substrate layer；

Lower metal layer is arranged on the silicon chip, for constituting metal connector device；

Transformer coil structure is arranged in the lower metal layer by the first insulating layer；Comprising:

Main line coil structures, setting on the first insulating layer, including main coil input interface, main coil output interface with And main coil intermediary interface；

Second insulating layer is arranged on the main line coil structures, is arranged in the main line coil structures and secondary coil structure Between；And

The secondary coil structure is arranged on the second insulating layer, including the output of secondary coil input interface, secondary coil connects Mouth and secondary coil intermediary interface；

Wherein the secondary coil structure includes the first outer ring portion, the second outer ring portion, inner ring portion and interconnecting piece；Described first Outer ring portion is connect by the interconnecting piece with the one end in the inner ring portion, the other end in the inner ring portion and second outer ring portion Connection, on the metal layer described in the main line coil structures, the interconnecting piece and the main line coil structures are wrong for the interconnecting piece setting It opens.

In silicon substrate multiple pieces piling type transformer device structure described in the utility model, the main line coil structures are to be open with one Class circle structure, the main coil input interface and main coil output interface of the main line coil structures be arranged at the main coil The open at one end of structure；The opening of the main line coil structures is arranged in respect to one in the main coil intermediary interface of the main line coil structures End；

First outer ring portion of the secondary coil structure and the second outer ring portion, which are constituted, has the first outward opening and the second outward opening Class circle structure, the inner ring portion of the secondary coil constitutes the class circle structure with an inner opening；Wherein first outward opening It is oppositely arranged with second outward opening；The inner opening is identical as the position of second outward opening；

The secondary coil input interface and secondary coil output interface of the secondary coil structure are arranged at the secondary coil structure First outward opening one end, the inner opening phase of the secondary coil structure is arranged in the secondary coil intermediary interface of the secondary coil structure To one end.

Compared to the prior art, stacked transformer device structure passes through secondary coil structure and company on the silicon chip of the utility model The setting of socket part, it is ensured that the normal work of main coil metal layer improves the quality factor and coupling of stacked transformer Coefficient；The quality factor of stacked transformer device structure and the poor technology of the coefficient of coup on the existing silicon chip of effective solution Problem.

Detailed description of the invention

Fig. 1 is the structural schematic diagram of the first embodiment of stacked transformer device structure on the silicon chip of the utility model；

Fig. 2 is the transformer coil structure of the first embodiment of stacked transformer device structure on the silicon chip of the utility model Structural schematic diagram；

Fig. 3 is the transformer coil structure of the first embodiment of stacked transformer device structure on the silicon chip of the utility model The structural schematic diagram of main line coil structures；

Fig. 4 is the transformer coil structure of the first embodiment of stacked transformer device structure on the silicon chip of the utility model The structural schematic diagram of secondary coil structure；

Fig. 5 is the transformer coil structure of the second embodiment of stacked transformer device structure on the silicon chip of the utility model Structural schematic diagram.

Specific embodiment

The explanation of following embodiment is to can be used to the specific of implementation to illustrate the utility model with reference to additional schema Embodiment.

Fig. 1 is please referred to, Fig. 1 is that the structure of the first embodiment of stacked transformer device structure on the silicon chip of the utility model is shown It is intended to.Stacked transformer device structure 10 includes silicon substrate layer 11, lower metal layer 12, the first insulating layer 13 and becomes on the silicon chip Transformer coil structure 14.The lower metal layer 12 is arranged on silicon chip 11, for constituting metal connector device, such as transformer wire The metal contact wires etc. of coil structures 14 and other devices, since the metal connector device is lower to material and production requirement, Therefore the bottom of stacked transformer device structure 10 on a silicon substrate is set.

Certain multilayer lower metal layer 12 settable here and corresponding first insulating layer 13, so as to realize to it is multiple its He is attached device simultaneously.

The transformer coil structure 14 is arranged in lower metal layer 12 by the first insulating layer 13, on the first insulating layer 13 Settable multiple through-hole (not shown)s, so that transformer coil structure 10 is connect by through-hole with lower metal layer 12.

Referring to Fig.1 and 2, Fig. 2 is the first embodiment of stacked transformer device structure on the silicon chip of the utility model The structural schematic diagram of transformer coil structure.The transformer coil structure 14 includes main line coil structures 141, second insulating layer 142 And secondary coil structure 143.

Main line coil structures 141 are arranged on the first insulating layer 13, including the output of main coil input interface 1411, main coil connects Mouth 1412 and main coil intermediary interface 1413.Based on main coil input interface 1411 and the difference of main coil output interface 1412 Coil corresponds to the both ends of inductance, and main coil intermediary interface 1413 is the tap that main coil corresponds to inductance, can connect power supply etc..

Second insulating layer 142 is arranged on main line coil structures 141, is arranged in institute's main line coil structures 141 and secondary coil knot Between structure 143, for main line coil structures 141 and secondary coil structure 143 to be isolated.

Secondary coil structure 143 is arranged in second insulating layer 142, including the output of secondary coil input interface 1431, secondary coil Interface 1432 and secondary coil intermediary interface 1433.Secondary coil input interface 1431 and secondary coil output interface 1432 are respectively Secondary coil corresponds to the both ends of inductance, and secondary coil intermediary interface 1433 is the tap that secondary coil corresponds to inductance, can connect bias voltage Source etc..

Secondary coil structure 143 main line coil structures 141 projection on the metal layer be located in main line coil structures 141, with Just the inductive relationship between main line coil structures 141 and secondary coil structure 143 is improved.Here main line coil structures 141 are preferably copper Loop construction, secondary coil structure 143 are preferably aluminum steel coil structures.

Referring to figure 3., Fig. 3 is the transformer of the first embodiment of stacked transformer device structure on the silicon chip of the utility model The structural schematic diagram of the main line coil structures of loop construction.The main line coil structures 141 are with the class being open a circle structure, main line The main coil input interface 1411 and main coil output interface 1412 of coil structures 141 are arranged at opening for main line coil structures 141 Mouth one end；The opening opposite side of main line coil structures 141 is arranged in the main coil intermediary interface 1413 of main line coil structures 141.It is main The loop construction of loop construction 141 is simple, and main coil input interface 1411 and main coil output interface 1412 are convenient for connection, Main coil intermediary interface 1413 is provided separately with main coil input interface 1411 and main coil output interface 1412, convenient for connection Power supply.

Referring to figure 4., Fig. 4 is the transformer of the first embodiment of stacked transformer device structure on the silicon chip of the utility model The structural schematic diagram of the secondary coil structure of loop construction.The secondary coil structure 143 includes the first outer ring portion 1434, the second outer ring portion 1435, inner ring portion 1436 and interconnecting piece 1437, the first outer ring portion 1434 are connected with the one end in inner ring portion 1436, inner ring portion 1436 The other end connect with the second outer ring portion 1435 by interconnecting piece 1437, interconnecting piece 1437 is arranged at 141 place of main line coil structures On metal layer, interconnecting piece 1437 is staggered with main line coil structures 141.First outer ring portion 1434, the second outer ring portion 1435 and inner ring The structure in portion 1436 can increase the length of secondary coil, to provide the job stability of secondary coil structure 143.

Interconnecting piece 1437 is located at the inside of main line coil structures 141, to eliminate interconnecting piece 1437 to the dry of main line coil structures 141 It disturbs；Interconnecting piece 1437 is preferably copper interconnecting piece.

First outer ring portion 1434 of secondary coil structure 143 and the second outer ring portion 1435, which are constituted, has 1438 He of the first outward opening The class circle structure of second outward opening 1439, the inner ring portion 1436 of secondary coil structure 143 constitutes the class with an inner opening 143A Circle structure；Wherein the first outward opening 1438 and the second outward opening 1439 are oppositely arranged, inner opening 143A and the second outward opening 1439 Position it is identical.The secondary coil input interface 1431 and secondary coil output interface 1432 of secondary coil structure 143 are arranged at time line The secondary coil intermediary interface 1433 of 1438 one end of the first outward opening of coil structures 143, secondary coil structure 143 is arranged in secondary coil knot The inner opening 143A opposite side of structure 143.Secondary coil intermediary interface 1433 is located at secondary coil input interface 1431 and secondary in this way Between coil output interface 1432.Secondary coil input interface 1431, secondary coil output interface 1432 and secondary coil intermediary interface 1433 are arranged at one end of secondary coil structure 143.

Secondary coil intermediary interface 1433 is secondary between secondary coil input interface 1431 and secondary coil output interface 1432 Coil input interface 1431, secondary coil output interface 1432 and secondary coil intermediary interface 1433 are located at main coil input interface Between 1411 and main coil output interface 1412.The cabling of secondary coil and main coil will not mutually interfere in this way, improve master The job stability of coil and secondary coil.

Referring to figure 2., by interconnecting piece 1437 be arranged the institute of main line coil structures 141 on the metal layer, and interconnecting piece 1437 It is staggered with main line coil structures 141.Therefore may be provided in second insulating layer 142 first connecting portion through-hole (not shown) and The other end of second connecting portion through-hole (not shown), inner ring portion 1436 passes through first connecting portion through-hole and interconnecting piece 1437 One end connection, the second outer ring portion 1435 are connect by second connecting portion through-hole with the other end of interconnecting piece 1437.

The interconnecting piece in secondary coil structure is arranged in main line loop knot stacked transformer device structure on the silicon chip of the present embodiment The place metal layer of structure, and interconnecting piece and main line coil structures are staggered, and avoid main line coil structures and short circuit occurs for secondary coil structure, And it can preferably guarantee the Q-factor and coupled systemes numerical value of stacked transformer.

Referring to figure 5., Fig. 5 is the transformer of the second embodiment of stacked transformer device structure on the silicon chip of the utility model The structural schematic diagram of loop construction.The transformer coil structure 24 includes main line coil structures, second insulating layer and secondary coil knot Structure.

Main coil structure setting on the first insulating layer, including main coil input interface 2411, main coil output interface 2412 and main coil intermediary interface 2413.Main coil input interface 2411 and main coil output interface 2412 are served as theme respectively The both ends of corresponding inductance are enclosed, main coil intermediary interface 2413 is the tap that main coil corresponds to inductance, can connect power supply etc..

Second insulating layer is arranged on main line coil structures, for main line coil structures and secondary coil structure to be isolated.

Secondary coil structure setting over the second dielectric, including secondary coil input interface 2431, secondary coil output interface 2432 and secondary coil intermediary interface 2433.Secondary coil input interface 2431 and secondary coil output interface 2432 are respectively time line The both ends of corresponding inductance are enclosed, secondary coil intermediary interface 2433 is the tap that secondary coil corresponds to inductance, can connect bias voltage source etc..

The secondary coil structure includes the first outer ring portion 2434, the second outer ring portion 2435, inner ring portion 2436 and interconnecting piece 2437, the first outer ring portion 2434 is connect by interconnecting piece 2437 with the one end in inner ring portion 2436, the other end in inner ring portion 2436 and The connection of second outer ring portion 2435, the setting of interconnecting piece 2437 is where main line coil structures on metal layer, interconnecting piece 2437 and main coil Structure is staggered.The structure of first outer ring portion 2434, the second outer ring portion 2435 and inner ring portion 2436 can increase the length of secondary coil Degree, to provide the job stability of secondary coil structure.

Preferably, main line coil structures are with the class being open a circle structure, the main coil input interface of main line coil structures 2411 and main coil output interface 2412 be arranged at the open at one end of main line coil structures；Among the main coil of main line coil structures The opening opposite side of main line coil structures is arranged in interface 2413；

First outer ring portion 2434 of secondary coil structure and the second outer ring portion 2435, which are constituted, to be had outside the first outward opening and second The class circle structure of opening, the inner ring portion of secondary coil constitute the class circle structure with an inner opening；Wherein the first outward opening and institute The second outward opening is stated to be oppositely arranged；Inner opening is identical as the position of the second outward opening；

The secondary coil input interface 2431 and secondary coil output interface 2432 of secondary coil structure are arranged at secondary coil structure First outward opening one end, the inner opening phase of secondary coil structure is arranged in the secondary coil intermediary interface 2433 of the secondary coil structure To one end.

On the basis of first embodiment, stacked transformer device structure is equally by interconnecting piece and master on the silicon chip of the present embodiment Loop construction is arranged in a staggered manner, and preferably ensure that the Q-factor and coupled systemes numerical value of stacked transformer.

Stacked transformer device structure is by the setting of secondary coil structure and interconnecting piece on the silicon chip of the utility model, can be with The normal work for guaranteeing main coil metal layer, improves the quality factor and the coefficient of coup of stacked transformer；Effective solution The quality factor of stacked transformer device structure and the poor technical problem of the coefficient of coup on existing silicon chip.

Although the serial number before embodiment is only for convenience of description in conclusion the utility model is disclosed above with embodiment And use, the sequence of various embodiments of the utility model is not caused to limit.Also, above-described embodiment is not practical to limit Novel, those skilled in the art can make various changes and profit without departing from the spirit and scope of the utility model Decorations, therefore the protection scope of the utility model subjects to the scope of the claims.

Claims (10)

1. stacked transformer device structure on a kind of silicon chip characterized by comprising

Silicon substrate layer；

Lower metal layer is arranged on the silicon chip, for constituting metal connector device；

Transformer coil structure is arranged in the lower metal layer by the first insulating layer；Comprising:

Main line coil structures are arranged on the first insulating layer, including main coil input interface, main coil output interface and master Coil intermediary interface；

Second insulating layer is arranged on the main line coil structures, is arranged between the main line coil structures and secondary coil structure；

The secondary coil structure, setting on the second insulating layer, including secondary coil input interface, secondary coil output interface with And secondary coil intermediary interface；

Wherein the secondary coil structure includes the first outer ring portion, the second outer ring portion, inner ring portion and interconnecting piece；First outer ring Portion is connect with the one end in the inner ring portion, and the other end in the inner ring portion is connected by the interconnecting piece and second outer ring portion It connects；Interconnecting piece setting is on metal layer, the interconnecting piece is staggered with the main line coil structures where the main line coil structures.

2. stacked transformer device structure on silicon chip according to claim 1, which is characterized in that the main line coil structures are tool There is the class circle structure of an opening, the main coil input interface and main coil output interface of the main line coil structures are arranged at The open at one end of the main line coil structures；The main line coil structures are arranged in the main coil intermediary interface of the main line coil structures Be open opposite side.

3. stacked transformer device structure on silicon chip according to claim 2, which is characterized in that the of the secondary coil structure One outer ring portion and the second outer ring portion constitute the class circle structure with the first outward opening and the second outward opening, the inner ring of the secondary coil Portion constitutes the class circle structure with an inner opening；Wherein first outward opening and second outward opening are oppositely arranged；Institute It is identical as the position of second outward opening to state inner opening；

The secondary coil input interface and secondary coil output interface of the secondary coil structure are arranged at the of the secondary coil structure The inner opening of the secondary coil structure is arranged in respect to one in one outward opening one end, the secondary coil intermediary interface of the secondary coil structure End.

4. stacked transformer device structure on silicon chip according to claim 3, which is characterized in that the secondary coil intermediary interface Between the secondary coil input interface and the secondary coil output interface.

5. stacked transformer device structure on silicon chip according to claim 3, which is characterized in that set in the second insulating layer Be equipped with first connecting portion through-hole and second connecting portion through-hole, the other end in the inner ring portion by the first connecting portion through-hole with One end of interconnecting piece connects, and second outer ring portion is connected by the other end of the second connecting portion through-hole and interconnecting piece.

6. stacked transformer device structure on silicon chip according to claim 3, which is characterized in that the secondary coil structure is in institute Projection where stating main line coil structures on metal layer is located in the main line coil structures.

7. stacked transformer device structure on silicon chip according to claim 1, which is characterized in that the main line coil structures are copper Loop construction, the secondary coil structure are aluminum steel coil structures, and the interconnecting piece is copper interconnecting piece.

8. stacked transformer device structure on silicon chip according to claim 1, which is characterized in that the connecting portion is in described The inside of main line coil structures.

9. stacked transformer device structure on a kind of silicon chip characterized by comprising

Silicon substrate layer；

Lower metal layer is arranged on the silicon chip, for constituting metal connector device；

Transformer coil structure is arranged in the lower metal layer by the first insulating layer；Comprising:

Main line coil structures are arranged on the first insulating layer, including main coil input interface, main coil output interface and master Coil intermediary interface；

Second insulating layer is arranged on the main line coil structures, is arranged between the main line coil structures and secondary coil structure； And

The secondary coil structure, setting on the second insulating layer, including secondary coil input interface, secondary coil output interface with And secondary coil intermediary interface；

Wherein the secondary coil structure includes the first outer ring portion, the second outer ring portion, inner ring portion and interconnecting piece；First outer ring Portion is connect by the interconnecting piece with the one end in the inner ring portion, and the other end in the inner ring portion and second outer ring portion connect It connects, on the metal layer described in the main line coil structures, the interconnecting piece is staggered with the main line coil structures for the interconnecting piece setting.

10. stacked transformer device structure on silicon chip according to claim 9, which is characterized in that the main line coil structures are With the class being open a circle structure, the main coil input interface and main coil output interface of the main line coil structures are respectively provided with In the open at one end of the main line coil structures；The main coil intermediary interface of the main line coil structures is arranged in the main line coil structures Opening opposite side；

First outer ring portion of the secondary coil structure and the second outer ring portion constitute the class with the first outward opening and the second outward opening Circle structure, the inner ring portion of the secondary coil constitute the class circle structure with an inner opening；Wherein first outward opening and institute The second outward opening is stated to be oppositely arranged；The inner opening is identical as the position of second outward opening；

The secondary coil input interface and secondary coil output interface of the secondary coil structure are arranged at the of the secondary coil structure The inner opening of the secondary coil structure is arranged in respect to one in one outward opening one end, the secondary coil intermediary interface of the secondary coil structure End.