CN209418532U - A kind of light emitting diode - Google Patents
A kind of light emitting diode Download PDFInfo
- Publication number
- CN209418532U CN209418532U CN201920246669.7U CN201920246669U CN209418532U CN 209418532 U CN209418532 U CN 209418532U CN 201920246669 U CN201920246669 U CN 201920246669U CN 209418532 U CN209418532 U CN 209418532U
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- CN
- China
- Prior art keywords
- item
- extension
- light emitting
- electrode
- emitting diode
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- 229910052751 metal Inorganic materials 0.000 claims abstract description 27
- 239000002184 metal Substances 0.000 claims abstract description 27
- 239000004065 semiconductor Substances 0.000 claims abstract description 21
- XLOMVQKBTHCTTD-UHFFFAOYSA-N Zinc monoxide Chemical compound [Zn]=O XLOMVQKBTHCTTD-UHFFFAOYSA-N 0.000 claims description 41
- 239000011787 zinc oxide Substances 0.000 claims description 17
- 230000004888 barrier function Effects 0.000 claims description 15
- 239000010931 gold Substances 0.000 claims description 11
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims description 10
- 239000011651 chromium Substances 0.000 claims description 8
- CSBHIHQQSASAFO-UHFFFAOYSA-N [Cd].[Sn] Chemical compound [Cd].[Sn] CSBHIHQQSASAFO-UHFFFAOYSA-N 0.000 claims description 6
- 229910052738 indium Inorganic materials 0.000 claims description 6
- APFVFJFRJDLVQX-UHFFFAOYSA-N indium atom Chemical compound [In] APFVFJFRJDLVQX-UHFFFAOYSA-N 0.000 claims description 6
- MRNHPUHPBOKKQT-UHFFFAOYSA-N indium;tin;hydrate Chemical compound O.[In].[Sn] MRNHPUHPBOKKQT-UHFFFAOYSA-N 0.000 claims description 6
- PJXISJQVUVHSOJ-UHFFFAOYSA-N indium(iii) oxide Chemical compound [O-2].[O-2].[O-2].[In+3].[In+3] PJXISJQVUVHSOJ-UHFFFAOYSA-N 0.000 claims description 5
- 239000000758 substrate Substances 0.000 claims description 5
- VYZAMTAEIAYCRO-UHFFFAOYSA-N Chromium Chemical compound [Cr] VYZAMTAEIAYCRO-UHFFFAOYSA-N 0.000 claims description 4
- 229910001260 Pt alloy Inorganic materials 0.000 claims description 4
- 229910052804 chromium Inorganic materials 0.000 claims description 4
- MMAADVOQRITKKL-UHFFFAOYSA-N chromium platinum Chemical compound [Cr].[Pt] MMAADVOQRITKKL-UHFFFAOYSA-N 0.000 claims description 4
- 229910003437 indium oxide Inorganic materials 0.000 claims description 4
- 229910052759 nickel Inorganic materials 0.000 claims description 4
- GYHNNYVSQQEPJS-UHFFFAOYSA-N Gallium Chemical compound [Ga] GYHNNYVSQQEPJS-UHFFFAOYSA-N 0.000 claims description 3
- 229910052733 gallium Inorganic materials 0.000 claims description 3
- PCHJSUWPFVWCPO-UHFFFAOYSA-N gold Chemical compound [Au] PCHJSUWPFVWCPO-UHFFFAOYSA-N 0.000 claims description 3
- 229910052737 gold Inorganic materials 0.000 claims description 3
- HCHKCACWOHOZIP-UHFFFAOYSA-N Zinc Chemical compound [Zn] HCHKCACWOHOZIP-UHFFFAOYSA-N 0.000 claims description 2
- 230000003647 oxidation Effects 0.000 claims description 2
- 238000007254 oxidation reaction Methods 0.000 claims description 2
- 229910052725 zinc Inorganic materials 0.000 claims description 2
- 239000011701 zinc Substances 0.000 claims description 2
- 230000008033 biological extinction Effects 0.000 abstract description 3
- 229960001296 zinc oxide Drugs 0.000 description 8
- 238000010586 diagram Methods 0.000 description 4
- 229910052782 aluminium Inorganic materials 0.000 description 2
- 239000004411 aluminium Substances 0.000 description 2
- XAGFODPZIPBFFR-UHFFFAOYSA-N aluminium Chemical compound [Al] XAGFODPZIPBFFR-UHFFFAOYSA-N 0.000 description 2
- NQBRDZOHGALQCB-UHFFFAOYSA-N oxoindium Chemical compound [O].[In] NQBRDZOHGALQCB-UHFFFAOYSA-N 0.000 description 2
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Substances [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 description 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 description 2
- 230000009286 beneficial effect Effects 0.000 description 1
- 239000004615 ingredient Substances 0.000 description 1
- 238000000034 method Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 238000002310 reflectometry Methods 0.000 description 1
- 238000005728 strengthening Methods 0.000 description 1
Abstract
The utility model belongs to technical field of semiconductors, more particularly to a kind of light emitting diode, the utility model increases electrically conducting transparent extension item in the current-dispersing structure of light emitting diode, item is extended by electrically conducting transparent and improves LED surface current expansion uniformity, and then improves chip light emitting uniformity and brightness.Extending item by electrically conducting transparent replaces part or all of metal electrode to extend item, under the premise of guaranteeing that current expansion ability is not deteriorated, reduces the extinction of metal electrode, improves the brightness of chip.
Description
Technical field
The utility model belongs to semiconductor field more particularly to a kind of light emitting diode of strengthening electric current extended capability.
Background technique
LED chip at present, because P-GaN electric conductivity is poor, current expansion is uneven, and chip light emitting is uneven, to improve core
The current expansion ability of piece, needs to make transparency conducting layer on the surface P-GaN of chip and metal electrode electric current of arranging in pairs or groups simultaneously expands
Open up layer, the usual ingredient of transparency conducting layer are as follows: NiAu, In2O3 SnO2, ZnO etc..Because metal electrode current extending wears light
Thoroughly, the remote poor and transparency conducting layer of reflectivity reduces metal electrode on chip and expands so improving transparency conducting layer current expansion ability
Exhibition level product is particularly important to improve LED chip luminous efficiency.
Summary of the invention
In order to solve the above technical problems, a kind of light emitting diode of the utility model, include at least substrate, n type semiconductor layer,
Luminescent layer, p type semiconductor layer, current barrier layer, current extending, and the N electrode and P that are electrically connected with n type semiconductor layer
The P electrode that type semiconductor layer is electrically connected, the P electrode include existing for the P-PAD and electrode extension structure, feature of routing
In: the electrode extension structure include first extension items that several extend to N electrode direction, the first extension item include with
The metal extension item of P-PAD connection and the first transparent conductive oxide connecting with metal extension item extend item.
The utility model also closer proposes a kind of light emitting diode, includes at least substrate, n type semiconductor layer, hair
Photosphere, p type semiconductor layer, current barrier layer, current extending, and the N electrode and p-type that are electrically connected with n type semiconductor layer
The P electrode that semiconductor layer is electrically connected, the P electrode include existing for the P-PAD and electrode extension structure, feature of routing
In: the electrode extension structure includes a first extension item extended to N electrode direction, and with the first extension item in a clamp
Second transparent conductive oxide at angle extends item.
Preferably, the second transparent conductive oxide extension item is located at the side or two sides of the first extension item.
Preferably, the first extension item includes the metal extension item connecting with P-PAD and connect with metal extension item
The first transparent conductive oxide extend item.
Preferably, the first extension item is that the first transparent conductive oxide extends item.
Preferably, the first extension item is that metal extends item.
Preferably, the first transparent conductive oxide extension item selects tin indium oxide, zinc oxide, cadmium tin, indium oxide, indium
One of doping zinc-oxide, aluminium-doped zinc oxide, Ga-doped zinc oxide or combinations thereof.
Preferably, the second transparent conductive oxide extension item selects tin indium oxide, zinc oxide, cadmium tin, indium oxide, indium
One of doping zinc-oxide, aluminium-doped zinc oxide, Ga-doped zinc oxide or combinations thereof.
Preferably, the metal extension item selects gold or nickel billon or chromium billon or chromium platinum alloy.
Preferably, the current barrier layer be located on current extending or under.
The utility model increases electrically conducting transparent extension item in the current-dispersing structure of light emitting diode, passes through electrically conducting transparent
It extends item and improves LED surface current expansion uniformity, and then improve chip light emitting uniformity and brightness.By transparent
Conductive extension item replaces part or all of metal electrode to extend item, under the premise of guaranteeing that current expansion ability is not deteriorated, reduces
The extinction of metal electrode, improves the brightness of chip.
Detailed description of the invention
Fig. 1 is the light emitting diode overlooking structure diagram of the utility model embodiment one.
Fig. 2 is the light emitting diode sectional view of the utility model embodiment one.
Fig. 3 is the light emitting diode overlooking structure diagram of the utility model embodiment two.
Specific embodiment
Light emitting diode is described in more detail in the utility model below in conjunction with schematic diagram, which show this
The preferred embodiment of utility model, it should be appreciated that those skilled in the art can modify the utility model described herein, and still
So realize the beneficial effects of the utility model.Therefore, following description should be understood as the extensive of those skilled in the art
Know, and is not intended as limitations of the present invention.
Embodiment 1
The overlooking structure diagram figure of light emitting diode in Fig. 1 the present embodiment.Fig. 2 is the sectional view of Fig. 1 line A-A.
Referring to Fig. 2, a kind of light emitting diode disclosed in the present embodiment includes at least substrate 100, n type semiconductor layer
200, luminescent layer 300, p type semiconductor layer 400, current barrier layer 510, current extending 500, and be divided into and partly being led positioned at N-type
Body layer 200 and with N electrode 210, the P electrode 600 on p type semiconductor layer 400.
Referring to attached drawing 1, P electrode 600 includes the P-PAD610 and electrode extension structure for routing, wherein electrode extension knot
Structure includes the first extension item that several extend to 210 direction of N electrode, and the first extension item includes the metal connecting with P-PAD610
Extension item 620 and the first transparent conductive oxide connecting with metal extension item 620 extend item 630.
N electrode 210 also may include for the N-PAD of routing and several second extensions extended to 600 direction of P electrode
Item, in the present embodiment, the second extension item can the structure of item be identical can also be different with the first extension.The present embodiment not
This is made specifically limited.
Metal extension item 620 selects golden (Au) or nickel billon (Ni/Au) or chromium billon (Cr/Au) or chromium platinum alloy
(Cr/Pt/Au).First transparent conductive oxide extends item 630 and selects tin indium oxide (ITO), zinc oxide (ZnO), cadmium tin
(CTO), indium oxide (InO), indium (In) doping zinc-oxide (ZnO), aluminium (Al) doping zinc-oxide (ZnO), gallium (Ga) doping oxidation
One of zinc (ZnO) or combinations thereof.The width range of first transparent conductive oxide extension item 630 is 1 ~ 10 to enclose for thickness
Range is 0.1 ~ 10 μm.
The upper and lower position of current barrier layer 510 and current extending 500, the present embodiment are not particularly limited.For example, electric
Flowing extension layer 500 can be located on current barrier layer 510, can also be located under current barrier layer 510.Current barrier layer
510 structure is identical as P electrode 600, and position is corresponding up and down.
Embodiment 2
Fig. 3 is the top view according to the light emitting diode of the utility model embodiment 2.
Referring to attached drawing 3, a kind of light emitting diode disclosed in the present embodiment, difference from example 1 is that, the reality
Applying electrode extension structure in scheme includes the first extension item that several extend to 210 direction of N electrode, and extends item with first
Second transparent conductive oxide in a certain angle extends item 640.
Wherein, the first extension item can be metal extension item 620, can be the first transparent conductive oxide extension item 630,
Being also possible to includes the metal extension item 620 connecting with P-PAD610 and what is connect with metal extension item 620 first transparent lead
Electroxidation object extends item 630.
N electrode 210 includes for the N-PAD of routing and several second extension items extended to 600 direction of P electrode, originally
In embodiment, the second extension item can the structure of item be identical can also be different with the first extension.In the present embodiment not to this
Make specifically limited.
Similarly, metal extension item 620 selects golden (Au) or nickel billon (Ni/Au) or chromium billon (Cr/Au) or chromium
Platinum alloy (Cr/Pt/Au).First transparent conductive oxide extend item 630 select tin indium oxide (ITO), zinc oxide (ZnO),
Cadmium tin (CTO), indium oxide (InO), indium (In) doping zinc-oxide (ZnO), aluminium (Al) doping zinc-oxide (ZnO), gallium (Ga)
One of doping zinc-oxide (ZnO) or combinations thereof.First transparent conductive oxide extends item 630 and the second transparent conductive oxide
Object extension item 640 width range be 1 ~ 10 enclose, thickness range is 0.1 ~ 10 μm.
The upper and lower position of current barrier layer 510 and current extending 500, the present embodiment are not particularly limited.For example, electric
Flowing extension layer 500 can be located on current barrier layer 510, can also be located under current barrier layer 510.Current barrier layer
510 structure is identical as P electrode 600, especially identical as the extension of P-PAD610 and first structure, and position is corresponding up and down.
The utility model increases electrically conducting transparent extension item in the current-dispersing structure of light emitting diode, passes through electrically conducting transparent
It extends item and improves LED surface current expansion uniformity, and then improve chip light emitting uniformity and brightness.By transparent
Conductive extension item replaces part or all of metal electrode to extend item, under the premise of guaranteeing that current expansion ability is not deteriorated, reduces
The extinction of metal electrode, improves the brightness of chip.
Embodiment of above is merely to illustrate the utility model, and is not intended to limit the utility model, the skill of this field
Art personnel, in the case where not departing from the spirit and scope of the utility model, the utility model can be made it is various modification and
It changes, therefore all equivalent technical solutions also belong to the scope of the utility model, the scope of patent protection of the utility model is answered
It is limited depending on Claims scope.
Claims (10)
1. a kind of light emitting diode, include at least substrate, n type semiconductor layer, luminescent layer, p type semiconductor layer, current barrier layer,
Current extending, and the N electrode being electrically connected with n type semiconductor layer, the P electrode being electrically connected with p type semiconductor layer, it is described
P electrode includes the P-PAD and electrode extension structure for routing, it is characterised in that: the electrode extension structure includes several
The the first extension item extended to N electrode direction, the first extension item include the metal that connect with P-PAD extend item and with gold
The first transparent conductive oxide for belonging to extension item connection extends item.
2. a kind of light emitting diode, include at least substrate, n type semiconductor layer, luminescent layer, p type semiconductor layer, current barrier layer,
Current extending, and the N electrode being electrically connected with n type semiconductor layer, the P electrode being electrically connected with p type semiconductor layer, it is described
P electrode includes the P-PAD and electrode extension structure for routing, it is characterised in that: the electrode extension structure includes one electric to N
The first extension item that extreme direction extends, and second transparent conductive oxide in a certain angle with the first extension item extend item.
3. a kind of light emitting diode according to claim 2, it is characterised in that: the second transparent conductive oxide extension
Item is located at the side or two sides of the first extension item.
4. a kind of light emitting diode according to claim 2, it is characterised in that: the first extension item includes and P-PAD
The metal extension item of connection and the first transparent conductive oxide connecting with metal extension item extend item.
5. a kind of light emitting diode according to claim 1, it is characterised in that: the first extension item is first transparent to lead
Electroxidation object extends item.
6. a kind of light emitting diode according to claim 1, it is characterised in that: the first extension item is metal extension
Item.
7. a kind of light emitting diode according to claim 1 or 4 or 5, it is characterised in that: the first transparent conductive oxide expands
It opens up item and selects tin indium oxide, zinc oxide, cadmium tin, indium oxide, indium doping zinc oxide, aluminium-doped zinc oxide, gallium doping oxidation
One of zinc or combinations thereof.
8. a kind of light emitting diode according to claim 2, it is characterised in that: the second transparent conductive oxide extends item choosing
With in tin indium oxide, zinc oxide, cadmium tin, indium oxide, indium doping zinc oxide, aluminium-doped zinc oxide, Ga-doped zinc oxide
One kind or combinations thereof.
9. a kind of light emitting diode described according to claim 1 or 4 or 6, it is characterised in that: the metal extension item selects gold
Or nickel billon or chromium billon or chromium platinum alloy.
10. a kind of light emitting diode according to claim 1 or 2, it is characterised in that: the current barrier layer is located at electric current
On extension layer or under.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920246669.7U CN209418532U (en) | 2019-02-27 | 2019-02-27 | A kind of light emitting diode |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920246669.7U CN209418532U (en) | 2019-02-27 | 2019-02-27 | A kind of light emitting diode |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209418532U true CN209418532U (en) | 2019-09-20 |
Family
ID=67944973
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201920246669.7U Active CN209418532U (en) | 2019-02-27 | 2019-02-27 | A kind of light emitting diode |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN209418532U (en) |
-
2019
- 2019-02-27 CN CN201920246669.7U patent/CN209418532U/en active Active
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