CN209344129U - A kind of OLED device of high stability - Google Patents
A kind of OLED device of high stability Download PDFInfo
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- CN209344129U CN209344129U CN201920195473.XU CN201920195473U CN209344129U CN 209344129 U CN209344129 U CN 209344129U CN 201920195473 U CN201920195473 U CN 201920195473U CN 209344129 U CN209344129 U CN 209344129U
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Abstract
The utility model provides a kind of OLED device of high stability, including substrate and encapsulation cover plate 10, the substrate is divided into pixel region and packaging area, it is realized and is connected by sealing medium between the substrate and encapsulation cover plate, pixel region on substrate has been superposed first electrode layer, organic luminous layer and the second electrode lay, is provided with buffer layer between the first electrode layer and substrate.The utility model solves the side etching phenomenon that dry etching auxiliary electrode layer occurs by setting buffer layer, while the metal ion of glass substrate being stopped to penetrate into first electrode layer/auxiliary electrode layer, avoids that electrochemical corrosion occurs；By increasing auxiliary electrode, the brightness uniformity of screen body is improved；Pixel confining layer is provided in first electrode layer and auxiliary electrode layer simultaneously, it is directly contacted with buffer layer, the effective pixel region OLED and/or pixel is formed and surround structure well, escaping gas outgas is avoided to discharge into inside pixel, cause pixel shrinkage, improves the reliability of OLED screen body.
Description
Technical field
The utility model relates to a kind of OLED device, and in particular to the OLED device and preparation method of high stability.
Background technique
Organic luminescent device (full name in English is organic lighting emitting display, abbreviation OLED) tool
Have the advantages that active shines, colour gamut is wide, response is fast, visual angle is wide, contrast is high, planarization, is next-generation display and lighting engineering
Development trend.
Organic light emitting display includes anode layer, luminescent layer and cathode layer.Usual large area lighting OLED light source meeting
There are brightness irregularities phenomenons, and brightness uniformity can be improved by increasing auxiliary electrode.But industry is carried out using dry etching method
Etching is easy to produce Fig. 4 undercutting (Undercut) during dry etching, and main cause is in dry etching process, and dry etching gas is vertical
Into etching process, caused by " lateral erosion " that substrate-side occurs, " undercutting " be not it is desired because will lead to subsequent OLED
Film layer it is discontinuous, and then cause electrical contact and encapsulation it is bad.
Further, during making oled substrate, can generally use organic resin (such as flatness layer, pixel confining layer,
Supporting layer, insulated column layer), even without organic resin is arrived, as each film layer of substrate is inevitable in manufacture craft
Absorbing steam during OLED aging, will inevitably discharge escaping gas if organic material is deposited on substrate
Outgas leads to " pixel shrinkage ", and then causes to shield body life time and reduce, thus suitable encapsulating structure for OLED service life extremely
It closes important.
Utility model content
Therefore, the technical problem to be solved by the present invention is to OUTGAS in the prior art to lead to asking for pixel shrinkage
Topic, the utility model provides a kind of OLED device and preparation method thereof of high stability thus, by increasing auxiliary electrode, mentions
The brightness uniformity of height screen body, and the angle Taper of auxiliary electrode is 30-70 °；Simultaneously in first electrode layer and auxiliary electrode layer
It is provided with pixel confining layer, is directly contacted with buffer layer, the effective pixel region OLED and/or pixel are formed and surround knot well
Structure avoids escaping gas outgas from discharging into inside pixel, causes pixel shrinkage, improves the reliability of OLED screen body.
To realize above-mentioned purpose of utility model, the utility model adopts the following technical solution:
A kind of OLED device of high stability, including substrate and encapsulated layer, the substrate are formed by with the encapsulated layer
Be provided with first electrode layer, auxiliary electrode layer and pixel confining layer in confined space, the first electrode layer/auxiliary electrode layer and
It is provided with buffer layer between substrate, several auxiliary electrodes being intervally arranged, the first electrode layer are provided on the buffer layer
The buffer layer and auxiliary electrode are covered, first electrode layer and figure on the auxiliary electrode is completely covered in the pixel confining layer
Shape has the opening for exposing at least part of first electrode layer, and being covered in the pixel confining layer and opening continuously has
Machine luminescent layer and the second electrode lay.
Divide the encapsulation region for having pixel region and surrounding the pixel region on the substrate, etching removal be located at auxiliary electrode with
First electrode layer between the encapsulation region, pixel confining layer and the buffering between auxiliary electrode and the encapsulation region
Layer directly contact setting.
Preferably, etching removal is located at auxiliary electrode one or both sides, makes pixel confining layer and institute positioned at the region
It states buffer layer and directly contacts setting.
The pixel confining layer and the width for the direct contact area of the buffer layer for being located at each auxiliary electrode side are
5um-10mm。
The auxiliary electrode is titanium aluminium titanium (TiAlTi), aluminium titanium (AlTi), aluminium molybdenum (AlMo) or molybdenum aluminium molybdenum (MoAlMo) knot
Structure, the Taper angle of the auxiliary electrode are 30-70 °.
The etching selectivity of the material of the biggish material of hardness and the buffer layer is 0.5-20 in the auxiliary electrode, excellent
Select 5-7；
The etching selectivity 0.5-5 of the material of the material of the pixel confining layer and the buffer layer.
The thickness 50nm-500nm of the buffer layer, preferably 100nm.
The pixel confining layer and the material of the buffer layer are identical or different, are silicon nitride, silica or silicon oxynitride
One or more of combination.
A kind of preparation method of the OLED device of high stability, includes the following steps:
S1, pixel region is divided on substrate and surrounds the encapsulation region of the pixel region, the buffer layer on substrate is described
Auxiliary electrode layer is prepared on buffer layer, etched to form several auxiliary electrodes being intervally arranged, auxiliary electrode Taper angle is
30-70°；
S2, first electrode layer is prepared on the basis of step S1, the first electrode layer covers the buffer layer and auxiliary
Electrode, first electrode layer of the etching removal between the auxiliary electrode and the encapsulation region, to expose buffer layer；
S3, pixel deposition confining layers on the basis of step S2, the pixel confining layer cover the first electrode layer and
Buffer layer between the auxiliary electrode and the encapsulation region, etching pixel confining layer form opening, the bottom of the opening
Portion is first electrode layer；
S4, luminous material layer and the second electrode lay made by vapor deposition mode on the basis of step S3, the pixel limits
It is formed with continuous organic luminous layer and the second electrode lay on layer and in opening, is encapsulated.
Preferably, the step S2 are as follows: first electrode layer is prepared on the basis of step S1, the first electrode layer is covered
The buffer layer and auxiliary electrode 7 are covered, etching removal is located at the first electrode layer of 7 one or both sides of auxiliary electrode, with dew
Buffer layer out, etching form anti-shorting layer.
Compared with prior art, the technical solution of the utility model has the following beneficial effects:
1, the OLED device of high stability provided by the utility model is provided between first electrode layer and substrate and more holds
The buffer layer easily etched, therefore during dry etching or etching form auxiliary electrode, it can avoid what dry etching auxiliary electrode layer occurred
Lateral erosion, and then efficiently solve the generation of " undercutting " (undercut) phenomenon.
2, further, due to the presence of buffer layer, so that dry etching first electrode or auxiliary electrode form more acute angle
The angle Taper, minimum angles are up to 30 °, i.e., since the setting of buffer layer can be very good to improve " the bottom of above-mentioned auxiliary electrode
Cut " phenomenon, " lateral erosion " is avoided the occurrence of, the angle Taper of auxiliary electrode is preferably modified, to improve subsequent organic/metal/encapsulation
The overlap joint of film layer.
3, further, increasing buffer layer can stop the metal ion of glass substrate to penetrate into first electrode layer/auxiliary
Electrode layer is helped, avoids that electrochemical corrosion occurs, improves the stability of OLED device.
4, the OLED device of high stability provided by the utility model, a part of pixel confining layer and the buffer layer
Directly contact setting, such as H=10um in attached drawing 2, and the short circuit prevention structure of the first pixel electrode layer of setting limits pixel
Given layer and buffer layer contacts can make pixel confining layer and buffer layer to the effective pixel region OLED and/or pixel such as attached drawing 6
It is formed and surrounds structure well, avoided outgas from discharging into inside pixel and cause pixel shrinkage, improve OLED screen body can
By property.And pixel confining layer and the material of buffer layer are substantially the same, interface bond property is more firm, further improves screen body
Package reliability.
Detailed description of the invention
In order to illustrate more clearly of the utility model specifically in fact with fingerprint identification function liquid crystal diode apply mode or
Technical solution in the prior art will make letter to specific embodiment or attached drawing needed to be used in the description of the prior art below
Singly introduce, it should be apparent that, the accompanying drawings in the following description is some embodiments of the utility model, common for this field
For technical staff, without creative efforts, it is also possible to obtain other drawings based on these drawings.
Fig. 1 is the OLED device schematic diagram of the utility model high stability；
Fig. 2 is the AA cross-sectional view of Fig. 1；
Fig. 3 is the structural schematic diagram of the utility model auxiliary electrode；
Fig. 4 is the structural schematic diagram of prior art auxiliary electrode；
Fig. 5 is that the top view after pixel confining layer is completed in preparation；
Fig. 6 is the AA cross-sectional view of Fig. 5；
Fig. 7 is the BB cross-sectional view of Fig. 5；
Fig. 8 is the partial enlarged view of Fig. 7；
Description of symbols: 1- substrate, 2- first electrode unit, 3- organic luminous layer, 4- the second electrode lay, 6- buffering
Layer, 7- auxiliary electrode, 8- drying sheet, 10- cap, 11- pixel region, 12- pixel confining layer, the anti-shorting layer of 13-, 14- sealing
Material layer；
Specific embodiment
The technical solution of the utility model is clearly and completely described below in conjunction with attached drawing, it is clear that described
Embodiment is the utility model a part of the embodiment, instead of all the embodiments.Based on the embodiments of the present invention, originally
Field those of ordinary skill every other embodiment obtained without making creative work belongs to practical
Novel protected range.
It is in the description of the present invention, it should be noted that term " center ", "upper", "lower", "left", "right", " perpendicular
Directly ", the orientation or positional relationship of the instructions such as "horizontal", "inner", "outside" is to be based on the orientation or positional relationship shown in the drawings, and is only
For ease of description the utility model and simplify description, rather than the device or element of indication or suggestion meaning must have it is specific
Orientation, be constructed and operated in a specific orientation, therefore should not be understood as limiting the present invention.In addition, term " the
One ", " second ", " third " are used for descriptive purposes only and cannot be understood as indicating or suggesting relative importance.
The utility model can be embodied in many different forms, and should not be construed as limited to implementation set forth herein
Example.On the contrary, providing these embodiments, so that the disclosure will be thorough and complete, and the design of the utility model will be filled
Divide and be communicated to those skilled in the art, the utility model will only be defined by the appended claims.In the accompanying drawings, for clarity,
The size and relative size of layer and region can be exaggerated.It should be understood that when element such as layer, region or substrate are referred to as " shape
At " or when " setting exist " another element "upper", which be can be arranged directly on another element, or can also deposit
In intermediary element.On the contrary, there is no centres when element is referred to as on " being formed directly into " or " being set up directly on " another element
Element.
In addition, as long as technical characteristic involved in the utility model different embodiments disclosed below is each other
Not constituting conflict can be combined with each other.
As depicted in figs. 1 and 2, the OLED device of a kind of high stability provided by the utility model, including substrate 1 and encapsulation
Layer 10, the substrate 1 is formed by confined space with the encapsulated layer 10 is provided with first electrode layer, auxiliary electrode layer and picture
Plain confining layers 12, the first electrode layer/buffer layer 6 is provided between auxiliary electrode layer and substrate, are arranged on the buffer layer 6
There are several auxiliary electrodes 7 being intervally arranged, the first electrode layer 2 covers the buffer layer 6 and auxiliary electrode 7, the pixel
First electrode layer that confining layers 12 are completely covered on the auxiliary electrode and graphically there is at least part for making first electrode layer
The opening of exposing, the opening shape be trapezium structure, trapezoidal bottom be first electrode layer 2, the pixel confining layer and
Continuous organic luminous layer and the second electrode lay are covered in opening.
The encapsulation region for having pixel region 11 and surrounding the pixel region 11 is divided on the substrate 1, etching removal is located at auxiliary
First electrode layer 2 between electrode 7 and the encapsulation region, the pixel confining layer between auxiliary electrode 7 and the encapsulation region
12 directly contact setting with the buffer layer.
The width of the pixel confining layer 12 and the direct contact area of the buffer layer is 5um-10mm.
As preferred embodiment, as shown in fig. 6, etching removal is located at the first electricity of 7 one or both sides of auxiliary electrode
Pole layer 2 makes the pixel confining layer 12 positioned at the region directly contact setting with the buffer layer.The pixel confining layer 12 and position
In each auxiliary electrode one or both sides the direct contact area of the buffer layer width be 5um-10mm.
The auxiliary electrode is titanium aluminium titanium (TiAlTi), aluminium titanium (AlTi), aluminium molybdenum (AlMo) or molybdenum aluminium molybdenum (MoAlMo) knot
Structure, as shown in figure 3, the Taper angle of the auxiliary electrode is 30-70 °, Taper angle herein refers to aluminium in auxiliary electrode
The angle Taper of layer
The etching selectivity of the material of the biggish material of hardness and the buffer layer 6 is 0.5-20 in the auxiliary electrode 7,
Preferably 5-7；Ti material or Mo material in the auxiliary electrode are the biggish material of hardness.
The etching selectivity (0.5-5) of the material of the material of the pixel confining layer 12 and the buffer layer 6.
The thickness 50nm-500nm of the buffer layer 6, preferably 100nm.
The pixel confining layer and the material of the buffer layer are identical or different, are silicon nitride, silica or silicon oxynitride
One or more of combination.
A kind of preparation method of the OLED device of high stability includes the following steps: as shown in Figure 1 to Figure 2
S1, it divides pixel region 11 on substrate 1 and surrounds the encapsulation region of the pixel region 11, buffering is deposited on pixel region
Layer 6 prepares auxiliary electrode layer on the buffer layer 6, etched to form several auxiliary electrodes 7 being intervally arranged, auxiliary electrode 7
Taper angle is 30-70 °；
S2, first electrode layer 2 is prepared on the basis of step S1, the first electrode layer 2 covers the buffer layer 6 and auxiliary
Help electrode 7, first electrode layer 2 of the etching removal between the auxiliary electrode 7 and the encapsulation region, to expose buffer layer 6；
S3, the pixel deposition confining layers 12 on the basis of step S2, the pixel confining layer 12 cover the first electrode
Layer 2 and the buffer layer 6 between the auxiliary electrode 7 and the encapsulation region, etching pixel confining layer 12 form trapezium structure
Opening, the bottom of trapezium structure is first electrode layer 2；
S4, luminous material layer 2 and the second electrode lay 3 made by vapor deposition mode on the basis of step S3, the pixel limit
It is formed with continuous organic luminous layer 3 and the second electrode lay 4 in given layer 12 and in opening, is encapsulated.
The structure as shown in Fig. 5 to Fig. 8 prepare when, other steps are same as above, wherein it is described the step of S2 are as follows: in the base of step S1
First electrode layer 2 is prepared on plinth, the first electrode layer 2 covers the buffer layer 6 and auxiliary electrode 7, and etching removal is located at institute
The first electrode layer 2 of 7 one or both sides of auxiliary electrode is stated, to expose buffer layer 6；Etching forms anti-shorting layer 13, it is described prevent it is short
Road floor is located at below the pixel confining layer and is covered by the pixel confining layer.
Each layer material therefor and thickness are as follows:
Buffer layer: the buffer layer is inorganic material, and such as silicon nitride, silica, silicon oxynitride, film deposition mode can be with
Utilize chemical vapor deposition (CVD), atomic layer deposition (ALD).The preferred silicon nitride of buffer layer, with a thickness of 20nm-500nm,
It is preferred that 100nm-150nm.
Auxiliary electrode layer: auxiliary electrode is metal or metal alloy, such as titanium aluminium titanium (TiAlTi), aluminium titanium (AlTi), molybdenum
Aluminium (MoAl), molybdenum aluminium molybdenum (MoAlMo), are patterned using dry carving technology or wet-etching technique；It is preferred that TiAlTi three-layered node
Structure, bottom Ti50-100nm, preferably 75nm push up titanium 50-100nm, preferably 50nm, Al 300-700nm, preferably 300nm；Pass through
Cl2With BCl3(two kinds of gas without being limited thereto) progress dry etching, 90 ° of Taper angle=, preferably 30-70 °.Wherein titanium aluminium titanium
(TiAlTi) structure is followed successively by Ti material layer, Al material layer and Ti material layer from bottom to top；Wherein titanium aluminium (AlTi) structure is under
Al material layer and Ti material layer are followed successively by and；Wherein molybdenum aluminium molybdenum (MoAlMo) structure is followed successively by Mo material layer, Al from bottom to top
Material layer and Mo material layer.
First electrode layer: transparent conductive metal oxide is sputtered such as ITO, AZO by PVD；Graphically using dry etching or
Wet etching, preferably wet etching, such as be etched using hydrochloric acid, nitric acid, acetic acid or its nitration mixture；It is preferred that with anti-short circuit
Patterned structures, i.e., by the way that pixel can be formed, with reference to attached drawing to the graphical of first electrode.
Pixel confining layer (or dielectric layer or insulating layer), more than first electrode layer and/or auxiliary electrode layer, material is
Silica, silicon nitride or silicon oxynitride, using with buffer layer same process (such as CVD, ALD), thickness 200nm-500nm is excellent
300nm is selected, the etching selectivity 0.5-5 with buffer layer；" pixel " is graphically formed by first electrode, can pixel be limited
Given layer is directly contacted with buffer layer, such as H >=0.5um in attached drawing.So that pixel confining layer to the effective pixel region OLED and/or
Pixel is formed surrounds structure well, avoids outgas from discharging into inside pixel, causes pixel shrinkage, improves OLED screen body
Reliability, and pixel confining layer and the material of buffer layer are substantially the same, interface bond property is more firm, further improves screen body
Package reliability.
The utility model has following embodiments:
Embodiment 1
As depicted in figs. 1 and 2, the OLED device of a kind of high stability provided by the utility model, including substrate 1 and encapsulation
Layer 10 divides the encapsulation region for having pixel region 11 and surrounding the pixel region 11 on the substrate 1, is provided with sealing material in the area
The bed of material 14 forms confined space after being tightly connected the substrate 1 and encapsulated layer 10, and the encapsulated layer is set close to the side of substrate 1
It is equipped with drying sheet 8 and absorbs steam, be packaged substrate and cap using UV glue as sealing material layer 14, improve screen body envelope
Fill reliability.The thickness 50nm-500nm of the buffer layer 6.
The luminous zone of the substrate 1 is provided with buffer layer 6, and several auxiliary electricity being intervally arranged are arranged on the buffer layer 6
Pole 7, the first electrode layer 2 cover the buffer layer 6 and auxiliary electrode 7, etching removal be located at the auxiliary electrode 7 with it is described
First electrode layer 2 between encapsulation region, i.e. in Fig. 2 between the auxiliary electrode and sealing material layer 14 of the rightmost side and the leftmost side, erosion
The width H=10um of the first electrode layer 2 of removal is carved, to expose buffer layer 6；
First electrode layer that the pixel confining layer 12 is completely covered on the auxiliary electrode and graphically has and make the first electricity
The opening that at least part of pole layer is exposed, the opening shape are trapezium structure, and trapezoidal bottom is first electrode layer 2,
Continuous organic luminous layer and the second electrode lay are covered in the pixel confining layer and opening.Due to be located at auxiliary electrode 7 with
Without first electrode layer on buffer layer between the encapsulation region, therefore the buffer layer in this region and pixel confining layer 12 are delayed with described
It rushes layer and directly contacts setting.
The width H of the pixel confining layer 12 and the direct contact area of the buffer layer is 10um.
The auxiliary electrode 7 includes Al material layer, the Ti material layer being superposed, and the Ti material layer is located at the Al material
The top of the bed of material.As shown in figure 3, the Taper angle of the auxiliary electrode 7 is 30-70 °.It can be seen from Fig. 3 and Fig. 4 comparison
The angle AlTi Taper can effectively be improved by increasing SiN buffer layer, this is because the etching selectivity of Al and Ti is bigger, etching
The rate of the rate > etching Ti of Al, not plus in substrate-side lateral erosion occurs for SiN, meeting, lead to the phenomenon that undercuting.Simultaneously as increasing
The Buffer Layer added stops the metal ion of glass substrate to penetrate into ITO layer, avoids ITO that electrochemical corrosion occurs, and improves
The stability of OLED device.
The etching selectivity of the material of the material of the auxiliary electrode 7 and the buffer layer 6 is 0.5-20, preferably 5-7；
The etching selectivity 0.5-5 of the material of the material of the pixel confining layer 12 and the buffer layer 6.
The etching selectivity, it is meant that the ratio of different films etching speed under identical conditions.That is: A film etching speed
For Ea, the etching speed under B film identical conditions is Eb, and etching selectivity at this moment is Sa/b=Ea/Eb
The pixel confining layer and the material of the buffer layer are identical or different, are silicon nitride, silica or silicon oxynitride
One or more of combination.
A kind of preparation method of the OLED device of high stability includes the following steps: as shown in Fig. 5 to Fig. 8
S1, it divides pixel region 11 on substrate 1 and surrounds the encapsulation region of the pixel region 11, buffering is deposited on pixel region
Layer 6 prepares auxiliary electrode layer on the buffer layer 6, etched to form several auxiliary electrodes 7 being intervally arranged, auxiliary electrode
7Taper angle is 30-70 °；
S2, first electrode layer 2 is prepared on the basis of step S1, the first electrode layer 2 covers the buffer layer 6 and auxiliary
Help electrode 7, first electrode layer 2 of the etching removal between the auxiliary electrode 7 and the encapsulation region, to expose buffer layer 6；
S3, the pixel deposition confining layers 12 on the basis of step S2, the pixel confining layer 12 cover the first electrode
Layer 2 and the buffer layer 6 between the auxiliary electrode 7 and the encapsulation region, etching pixel confining layer 12 form trapezium structure
Opening, the bottom of the trapezium structure is first electrode layer 2；
S4, luminous material layer 2 and the second electrode lay 3 made by vapor deposition mode on the basis of step S3, the pixel limit
It is formed with continuous organic luminous layer 3 and the second electrode lay 4 in given layer 12 and in opening, is encapsulated.
Material used by each layer and thickness are as follows in the present embodiment:
Substrate 1, material are alkali-free glass；
Buffer layer 6 (Buffer layers), by high temperature CVD process deposit one layer of silicon nitride 100nm, 350 DEG C of technological temperature, with
The adhesive force 5B of substrate, refractive index 1.8；
Auxiliary electrode layer 7 is AlTi, pushes up titanium 50nm, Al 300nm；Pass through Cl2With BCl3It is graphical to carry out dry etching, Taper
70 ° of angle；Etching is not limited to dry etching, and etching mode can also be selected to carry out, and selects H3PO4、CH3COOH、HNO3Nitration mixture according to
Certain proportion solution is etched；
First electrode layer 2, sputters tin indium oxide (ITO) by PVD, and thickness 150nm is carried out using wet process (harsh) technique
Graphically；
Pixel confining layer 12, more than first electrode layer, material SiN, using with Buffer same process, thickness
300nm, grid size 400um*400um, is patterned to form pixel confining layer using dry carving technology；
Organic luminous layer 3: including but is not limited to hole injection layer (HIL), hole transmission layer (HTL), luminescent layer (EL), electricity
Sub- transport layer (ETL), electron injecting layer (EIL) etc.；
Second electrode 4, including Al electrode, MgAg electrode, metal oxide electrode (such as ITO) sputter one layer by thermal evaporation
With a thickness of the Al of 200nm；
Cap 10: organic luminous layer is packaged, and and buffer layer contacts, it is inhaled in the attached drying sheet 8 of cap face paste
Steam is received, substrate and cap are packaged using UV glue, water oxygen is avoided to corrode.Improve screen body package reliability.Including passing
Sealing material 14 is done in uv-curable glue (UV glue) encapsulation of system, and substrate and cap are packaged by UV glue, and drying sheet 8 is (in figure
It is not shown) steam is absorbed, improve screen body package reliability；And thin-film package (TFE) encapsulation, using thin-film package mode, such as
Inorganic layer/organic layer/inorganic layer, inorganic layer can carry out film deposition using chemical vapor deposition (CVD), and organic layer is using spray
Ink printing (IJP) carries out film printing.Such as use SiO (1um)/IJP (8um)/SiO (1um).
Embodiment 2
As shown in Figure 5 and Figure 8, the same embodiment of OLED device basic structure of a kind of high stability provided by the utility model
1, the difference is that:
The luminous zone of the substrate 1 is provided with buffer layer 6, is provided on the buffer layer 6 and is formed by first electrode layer
Anti- shorting layer 13, several auxiliary electrodes 7 being intervally arranged, the first electrode layer 2 cover the buffer layer 6 and auxiliary electrode 7,
Etching removal is located at the first electrode layer 2 of 7 one or both sides of auxiliary electrode, etches the width H of the first electrode layer 2 of removal
=10um, to expose buffer layer 6；
As shown in fig. 6, first electrode layer 2 that the pixel confining layer 12 is completely covered on the auxiliary electrode and being provided with
The opening for exposing at least part of first electrode layer 2, the opening shape are trapezium structure, and trapezoidal bottom is first
Continuous organic luminous layer 3 and the second electrode lay 4 are covered in electrode layer 2, the pixel confining layer 12 and opening.Due to being located at
Without first electrode layer on the buffer layer of 7 one or both sides of auxiliary electrode, thus the buffer layer in this region and pixel confining layer 12 with
The buffer layer directly contacts setting.
The pixel confining layer 12 and the direct contact area of the buffer layer for being located at each auxiliary electrode one or both sides
Width H be 10um.
A kind of preparation method of the OLED device of the high stability of the present embodiment, as shown in Fig. 5 to Fig. 8, including following steps
It is rapid:
S1, it divides pixel region 11 on substrate 1 and surrounds the encapsulation region of the pixel region 11, buffering is deposited on pixel region
Layer 6 prepares auxiliary electrode layer on the buffer layer 6, etched to form several auxiliary electrodes 7 being intervally arranged, auxiliary electrode 7
Taper angle is 30-70 °；
S2, first electrode layer 2 is prepared on the basis of step S1, the first electrode layer 2 covers the buffer layer 6 and auxiliary
Electrode 7 is helped, etching removal is located at the first electrode layer 2 of 7 one or both sides of auxiliary electrode, to expose buffer layer 6；Etch shape
At anti-shorting layer 13；
S3, the pixel deposition confining layers 12 on the basis of step S2, the pixel confining layer 12 cover the first electrode
Layer 2 and the buffer layer 6 between the auxiliary electrode 7 and the encapsulation region, etching pixel confining layer 12 form trapezium structure
Opening, the bottom of trapezium structure is first electrode layer 2；
S4, luminous material layer 2 and the second electrode lay 3 made by vapor deposition mode on the basis of step S3, the pixel limit
It is formed with continuous organic luminous layer 3 and the second electrode lay 4 in given layer 12 and in opening, is encapsulated.
Comparative example
Substrate 1, material are alkali-free glass；
Auxiliary electrode layer 7 is AlTi, pushes up titanium 50nm, Al 300nm；Structure shown in Fig. 4 is prepared by engraving method；
First electrode layer sputters tin indium oxide (ITO) by PVD, thickness 150nm；
Pixel confining layer, more than first electrode layer, material SiN, using with Buffer same process, thickness 300nm,
Grid size 400um*400um；
Organic luminous layer, including HIL, HTL, EL, ETL, EIL；
Second electrode, including Al electrode sputter the Al that a layer thickness is 200nm by thermal evaporation；
Organic luminous layer is packaged by encapsulated layer, and water oxygen is avoided to corrode.Water is absorbed in the attached drying sheet of cap face paste
Substrate and cap are packaged by vapour using UV glue, improve screen body package reliability.
Experimental results are as follows:
It under 1000 brightness, is tested using life test, it can be seen that the device of the utility model is due to increasing
Buffer layer can promote the service life of 5 times of OLED device.Illustrate that screen body reliability can be significantly improved by increasing buffer layer.It is main former
Because as follows:
Due to the presence of buffer layer, so that dry etching first electrode or auxiliary electrode form the angle Taper of more acute angle, i.e.,
Since the setting of buffer layer can be very good to improve " undercutting " phenomenon of above-mentioned auxiliary electrode, " lateral erosion " is avoided the occurrence of, preferably
The angle Taper for modifying auxiliary electrode, to improve the overlap joint of subsequent organic/metal/encapsulation film layer.
Further, increasing buffer layer can stop the metal ion of glass substrate to penetrate into first electrode layer/auxiliary
Electrode layer avoids that electrochemical corrosion occurs, improves the stability of OLED device.
After tested, the average life span of the device of the utility model embodiment 1 is 500h@1000nit, the average longevity of device 2
Life is 550h@1000nit, and the average life span of comparative example device is therefore 100h@1000nit. substantially increases device lifetime.
Obviously, the above embodiments are merely examples for clarifying the description, and does not limit the embodiments.It is right
For those of ordinary skill in the art, can also make on the basis of the above description it is other it is various forms of variation or
It changes.There is no necessity and possibility to exhaust all the enbodiments.And it is extended from this it is obvious variation or
It changes among the protection scope created still in the utility model.
Claims (10)
1. a kind of OLED device of high stability, including substrate (1) and encapsulated layer (10), the substrate (1) and the encapsulated layer
(10) it is formed by confined space and is provided with first electrode layer, auxiliary electrode layer and pixel confining layer (12), which is characterized in that
The first electrode layer/be provided between auxiliary electrode layer and substrate buffer layer (6) is provided on the buffer layer (6)
Several auxiliary electrodes (7) being intervally arranged, the first electrode layer (2) cover the buffer layer (6) and auxiliary electrode (7), institute
Stating the first electrode layer (2) that pixel confining layer (12) is completely covered on the auxiliary electrode (7) and graphically having makes first electrode
Continuous organic luminous layer is covered in the opening that at least part of layer (2) is exposed, the pixel confining layer (12) and opening
(3) and the second electrode lay (4).
2. the OLED device of high stability according to claim 1, which is characterized in that dividing on the substrate (1) has pixel
Area (11) and the encapsulation region for surrounding the pixel region (11), etching removal is between auxiliary electrode (7) and the encapsulation region
First electrode layer (2), pixel confining layer (12) and the buffer layer (6) between auxiliary electrode (7) and the encapsulation region
Directly contact setting.
3. the OLED device of high stability according to claim 1, which is characterized in that etching removal is located at auxiliary electrode (7)
The first electrode layer (2) of one or both sides contacts the pixel confining layer (12) positioned at the region directly with the buffer layer (6)
Setting.
4. the OLED device of the high stability according to Claims 2 or 3, which is characterized in that
The direct contact zone of the buffer layer of the pixel confining layer (12) and the one or both sides for being located at each auxiliary electrode (7)
The width in domain is 5um-10mm.
5. the OLED device of high stability according to claim 1, which is characterized in that the auxiliary electrode (7) is titanium aluminium titanium
(TiAlTi), aluminium titanium (AlTi), aluminium molybdenum (AlMo) or molybdenum aluminium molybdenum (MoAlMo) structure.
6. the OLED device of high stability according to claim 1, which is characterized in that the angle Taper of the auxiliary electrode (7)
Degree is 30-70 °.
7. the OLED device of high stability according to claim 1, which is characterized in that
The etching selectivity of the biggish material of hardness and the material of the buffer layer (6) is 0.5-20 in auxiliary electrode (7)；
The etching selectivity 0.5-5 of the material of the material and buffer layer (6) of the pixel confining layer (12).
8. the OLED device of high stability according to claim 7, which is characterized in that the material of the auxiliary electrode (7) with
The etching selectivity of the material of the buffer layer (6) is (5-7).
9. the OLED device of high stability according to claim 1, which is characterized in that the thickness 50nm- of the buffer layer (6)
500nm。
10. the OLED device of high stability according to claim 1, which is characterized in that
The pixel confining layer and the material of the buffer layer are identical or different, are in silicon nitride, silica or silicon oxynitride
One or more of combinations.
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