CN209343802U - A kind of novel Low ESR ITO conductive film - Google Patents
A kind of novel Low ESR ITO conductive film Download PDFInfo
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- CN209343802U CN209343802U CN201822221519.9U CN201822221519U CN209343802U CN 209343802 U CN209343802 U CN 209343802U CN 201822221519 U CN201822221519 U CN 201822221519U CN 209343802 U CN209343802 U CN 209343802U
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- low esr
- ito coating
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Abstract
The utility model discloses a kind of novel Low ESR ITO conductive films, including a basal layer, it further include that lower ITO coating, intermediate deposit, the upper ITO coating set is successively folded on the basal layer upper surface, the lower ITO coating, upper ITO coating complex refractivity index be respectively 1.8 ~ 2.1, the refractive index of the intermediate deposit is lower than the complex refractivity index of upper ITO coating and lower ITO coating.The utility model achievees the effect that anti-reflection anti-reflection by using the mode of high/low/high refractive index matching and specific thickness of coating, compared with conventional Low ESR ITO conductive film, have the advantages that visible light transmittance is high, yellowish phenomenon is improved, etching line is thin out.
Description
Technical field
The utility model relates to a kind of novel Low ESR ITO conductive films.
Background technique
Be related to technology applied to the conductive film of large scale screen at present mainly to include the following three types: metal grill technology is received
Rice silver-colored technology, tradition ITO technology.Wherein, 1, metal grill technology: at present large touch material based on metal grill, but
In the presence of the technical problems such as the interference of not auspicious line, touch signal be low, therefore it is only used for low resolution and shows screen, application range
It is narrow；2, nano silver technology: nano silver be once once considered as replace ito thin film optimal material, but there are the market price it is higher and
The problems such as quality is low, cost and yield rate are difficult to control；3, tradition ITO technology: ITO electric conductivity is not as good as mesh metal and receives
Rice silver wire, its optical property of Low ESR ITO material is not excellent enough, shows as that light transmittance is low, color is partially yellow, etching line weight.
Summary of the invention
The technical issues of the utility model solves is to provide a kind of novel Low ESR ITO conductive film.
The technical solution of the utility model is: a kind of novel Low ESR ITO conductive film, including a basal layer, further include
Lower ITO coating, intermediate deposit, the upper ITO coating set, the lower ITO coating, upper ITO are successively folded on the basal layer upper surface
The complex refractivity index of coating is respectively 1.8~2.1, and the refractive index of the intermediate deposit is answered lower than upper ITO coating and lower ITO coating
Refractive index.
Further, the material of basal layer described in the utility model is one of PET, glass, PC plate, COP, PI.
Further, intermediate deposit described in the utility model is silica coating.
Further, the refractive index of intermediate deposit described in the utility model is 1.4~1.5.
Further, intermediate deposit described in the utility model is magnesium fluoride coating or fluorination aluminium coat.
Further, lower ITO coating and the thickness of upper ITO coating described in the utility model are same or different.
Further, the thickness of intermediate deposit described in the utility model is less than the thickness of upper ITO coating and lower ITO coating
Degree.
The utility model compared with prior art the advantages of be: by using it is high/low/high refractive index matching and specific coating
The mode of thickness achievees the effect that anti-reflection anti-reflection, compared with conventional Low ESR ITO conductive film, has visible light transmittance
The advantage high, yellowish phenomenon is improved, etching line is thin out.
Detailed description of the invention
The utility model is further described with reference to the accompanying drawings and embodiments:
Fig. 1 is the structural schematic diagram of the utility model.
Wherein: 1, basal layer；2, lower ITO coating；3, intermediate deposit；4, upper ITO coating.
Specific embodiment
Embodiment one:
A kind of specific embodiment of novel Low ESR ITO conductive film of the utility model, including one are shown in conjunction with attached drawing
Basal layer 1, the material of the basal layer 1 are one of PET, glass, PC plate, COP, PI.
It further include that lower ITO coating 2, intermediate deposit 3, the upper ITO coating 4 set is successively folded on 1 upper surface of basal layer,
The complex refractivity index of the lower ITO coating 2 is 1.9, and the complex refractivity index of the upper ITO coating 4 is 1.9, the folding of the intermediate deposit 3
The complex refractivity index that rate is lower than upper ITO coating 4 and lower ITO coating 2 is penetrated, in the present embodiment, intermediate deposit 3 is silica coating,
The refractive index of silica coating is 1.4.But it is not limited to this, intermediate deposit 3 or magnesium fluoride coating or aluminum fluoride
Coating.
It should be noted that under normal circumstances, touch screen size is bigger, limited by IC driving, it is required that touch-control is led
The impedance of electric material is lower, and ITO electric conductivity is not as good as materials such as silver, the copper of metal grill and nano silver.By formula R=
ρ/d is obtained, and ITO impedance R (square resistance) is by ρ (resistivity) and ITO layer thickness d influences.
Low ESR ITO is realized by increasing ITO thickness under normal circumstances.Such as sheet resistance is 150 Ω/ ITO
Thickness of coating is 19nm, and sheet resistance is that 80 Ω/ ITO thickness of coating is 28nm, and sheet resistance is that 40 Ω/ ITO thickness of coating is
54nm。
And the thickening of ITO coating will lead to its translucency variation.Such as 150 Ω/ ITO Film visible light transmittance is equal
Value up to 88.92%, 80 Ω/ ITO Film visible light transmittance mean value is 87.67%, and 40 Ω/ ITO Film
Visible light transmittance mean value is only 84.71%.
In the present embodiment, for 40 Ω/ sheet resistance, lower ITO coating 2 with a thickness of 27nm, the thickness of silica coating
Degree be 15nm, upper ITO coating 4 with a thickness of 27nm.
This novel Low ESR ITO conductive film is matched by using high/low/high refractive index and the mode of specific thickness of coating
The effect that can achieve anti-reflection anti-reflection, compared with conventional Low ESR ITO conductive film, it is seen that light transmission rate is higher.
Further, usually, color quantizing indicates that a*, b* value wants as far as possible with CIE L*a*b* color coordinate values
Low, such product colour will not just turn to be yellow.It is illustrated with 40 Ω/ sheet resistance ITO Film L*, a*, b* value, the results are shown in Table 1.
Table 1
It can be seen in table 1 that the utility model, compared with conventional 40 Ω/ sheet resistance ITO Film, L*, a* value are approximate, b*
Value has dropped 1.77, therefore product colour yellowing phenomenon can be improved.
In addition, ITO etching lines can be made to become by the visual contrast in the non-region ITO after reducing the region ITO and etching
It is light, the effect for eliminating line pattern can be played in this way, improve visual impression.The visual contrast of etching line quantifies, and can use visible light
Reflectivity difference indicate, the results are shown in Table 2.
Table 2
As can be seen from Table 2, in visible light 400-700nm wave band, the present invention etching region 40 Ω/ and non-etched area's reflectivity
Difference is 1.55, and conventional 40 Ω/ quarter area and non-etched area's reflectivity difference be 3.29.In the most sensitive 500- of human eye
650nm optical band, the present invention etching region 40 Ω/ and non-etched area's reflectivity difference are 1.38, and the quarter of conventional 40 Ω/
Area and non-etched area's reflectivity difference are 2.21.Therefore the present invention is lighter than the etching line of conventional Low ESR ITO structure, vision effect
Fruit is more preferable.
Embodiment two: in the present embodiment, the difference is that, the complex refractivity index of lower ITO coating 2 is with embodiment one
1.8, the complex refractivity index of upper ITO coating 4 is 1.8, and the refractive index of silica coating is 1.4.
In the present embodiment, equally with 40 Ω/ sheet resistance for, lower ITO coating 2 with a thickness of 27nm, silica coating
With a thickness of 5nm, upper ITO coating 4 with a thickness of 27nm.
Embodiment three: in the present embodiment, the difference is that, the complex refractivity index of lower ITO coating 2 is with embodiment one
1.9, the complex refractivity index of upper ITO coating 4 is 1.9, and the refractive index of silica coating is 1.5.
In the present embodiment, equally with 40 Ω/ sheet resistance for, lower ITO coating 2 with a thickness of 27nm, silica coating
With a thickness of 10nm, upper ITO coating 4 with a thickness of 27nm.
Example IV: in the present embodiment, the difference is that, the complex refractivity index of lower ITO coating 2 is 2 with embodiment one,
The complex refractivity index of upper ITO coating 4 is 2, and the refractive index of silica coating is 1.5.
In the present embodiment, equally with 40 Ω/ sheet resistance for, lower ITO coating 2 with a thickness of 27nm, silica coating
With a thickness of 20nm, upper ITO coating 4 with a thickness of 27nm.
Embodiment five: in the present embodiment, the difference is that, the complex refractivity index of lower ITO coating 2 is with embodiment one
2.1, the complex refractivity index of upper ITO coating 4 is 2.1, and the refractive index of silica coating is 1.4.
In the present embodiment, equally with 40 Ω/ sheet resistance for, lower ITO coating 2 with a thickness of 27nm, silica coating
With a thickness of 25nm, upper ITO coating 4 with a thickness of 27nm.
Certainly the above embodiments are only for explaining the technical ideas and features of the present invention, and its object is to allow be familiar with this
The people of technology can understand the content of the utility model and implement accordingly, and the protection model of the utility model can not be limited with this
It encloses.Any modifications made in accordance with the spirit of the main technical solutions of the utility model should all cover the guarantor in the utility model
Within the scope of shield.
Claims (7)
1. a kind of novel Low ESR ITO conductive film, including a basal layer (1), it is characterised in that: further include in the basal layer
(1) on upper surface successively fold set lower ITO coating (2), intermediate deposit (3), upper ITO coating (4), the lower ITO coating (2),
The complex refractivity index of upper ITO coating (4) is respectively 1.8 ~ 2.1, the refractive index of the intermediate deposit (3) lower than upper ITO coating (4) and
The complex refractivity index of lower ITO coating (2).
2. a kind of novel Low ESR ITO conductive film according to claim 1, it is characterised in that: the material of the basal layer (1)
Material is one of PET, glass, PC plate, COP, PI.
3. a kind of novel Low ESR ITO conductive film according to claim 1, it is characterised in that: the intermediate deposit (3) is
Silica coating.
4. a kind of novel Low ESR ITO conductive film according to claim 3, it is characterised in that: the intermediate deposit (3)
Refractive index is 1.4 ~ 1.5.
5. a kind of novel Low ESR ITO conductive film according to claim 1, it is characterised in that: the intermediate deposit (3) is
Magnesium fluoride coating or fluorination aluminium coat.
6. a kind of novel Low ESR ITO conductive film according to claim 1, it is characterised in that: the lower ITO coating (2)
It is same or different with the thickness of upper ITO coating (4).
7. a kind of novel Low ESR ITO conductive film according to claim 6, it is characterised in that: the intermediate deposit (3)
Thickness is less than the thickness of upper ITO coating (4) and lower ITO coating (2).
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| Application Number | Priority Date | Filing Date | Title |
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| CN201822221519.9U CN209343802U (en) | 2018-12-27 | 2018-12-27 | A kind of novel Low ESR ITO conductive film |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201822221519.9U CN209343802U (en) | 2018-12-27 | 2018-12-27 | A kind of novel Low ESR ITO conductive film |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112526650A (en) * | 2020-12-09 | 2021-03-19 | 浙江日久新材料科技有限公司 | Low impedance type ITO conductive film |
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2018
- 2018-12-27 CN CN201822221519.9U patent/CN209343802U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN112526650A (en) * | 2020-12-09 | 2021-03-19 | 浙江日久新材料科技有限公司 | Low impedance type ITO conductive film |
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