CN209312712U - Ion beam deposition focusedion source - Google Patents

Ion beam deposition focusedion source Download PDF

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Publication number
CN209312712U
CN209312712U CN201920031293.8U CN201920031293U CN209312712U CN 209312712 U CN209312712 U CN 209312712U CN 201920031293 U CN201920031293 U CN 201920031293U CN 209312712 U CN209312712 U CN 209312712U
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CN
China
Prior art keywords
ion beam
focusing
arc chamber
beam deposition
averager
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Expired - Fee Related
Application number
CN201920031293.8U
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Chinese (zh)
Inventor
不公告发明人
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Weiye Smart Core (beijing) Technology Co Ltd
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Weiye Smart Core (beijing) Technology Co Ltd
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Priority to CN201920031293.8U priority Critical patent/CN209312712U/en
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Expired - Fee Related legal-status Critical Current
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Abstract

The utility model discloses a kind of ion beam deposition focusedion source, including arc chamber, anode canister, magnetic pole, focusing screen, focusing accelerating grid, cathode filament composition.Effective focused ion beam is formed due to focusing screen and focusing after accelerating grid uses spherical surface aperture plate, ion beam extraction to accelerate, energy bombardment target can be concentrated to carry out ion beam deposition processing.Averager is to be mounted on the side of ion source with ion source separate design, averager simultaneously, and averager filament is not bombarded directly by ion beam, and neutralization is high-efficient, and burn-out life is long, convenient for installation and maintenance.

Description

Ion beam deposition focusedion source
Technical field
The utility model relates to ion beam technology field more particularly to a kind of ion beam deposition focusedion sources.
Background technique
Ion beam sputtering deposition technology provides new process, new technology for scientific research and production, rapidly develops to be current Thin film integrated circuit, thin film sensor, magnetic thin film devices, high temperature alloy conductor thin film etc. be widely applied field and provide New technological means.Ion source is the core component of ion beam apparatus, it is cathode filament launching electronics ionized gas, formed etc. Gas ions are simultaneously drawn through ion aperture plate.
However this kind of ion beam sputtering equipment, the screen of ion source mostly use parallel aperture plate with accelerating grid now, it can only Parallel ion beam is drawn, ion beam etching microfabrication is carried out to workpiece, focused ion beam bombardment target, sputtering target can not be formed Material atom forms ion beam deposition processing.In addition, the averager filament of ion source is to be erected in front of aperture plate in parallel, by ion beam Intense bombardment, the service life is short, and maintenance replacement is inconvenient.
Therefore, a kind of ion beam deposition focusedion source that averager is separated with ion source and its important is developed.
Summary of the invention
The purpose of this utility model is that in view of the above-mentioned problems, providing a kind of ion beam deposition focusedion source, ion beam It draws and forms effective focused ion beam after accelerating, energy bombardment target is concentrated to carry out ion beam deposition processing.Averager simultaneously Be with ion source separate design, averager burn-out life is long, and maintenance replacement is convenient.
In order to solve the above technical problems, the technical solution of the utility model is: a kind of ion beam deposition focusedion source, It is characterized in that, comprising:
Arc chamber, cylindrical body made of a kind of stainless steel material form plasma for generating gas ionization;
A kind of anode canister, cylindrical body made of stainless steel material, is mounted in the arc chamber and exhausted with the arc chamber Edge;
Magnetic pole, a kind of high temperature resistant ferromagnetism stick establish electromagnetic field in the anode canister, accelerate electron collision gas molecule Or the chance of atom, it is adequately ionized gas;
Focus screen, the netted aperture plate of spherical surface made of a kind of refractory metal material, be mounted on the arc chamber just before Side;
Focus accelerating grid, the netted aperture plate of spherical surface made of a kind of refractory metal material is mounted on the screen that focuses Front keeps certain distance and mutual insulating with the focusing screen;
Cathode filament is mounted on the front adjacent of the air taking port of the arc chamber, generates a large amount of electronics for heating, ionization From the air taking port be sent into gas and form plasma.
The focusing screen and focus accelerating grid spherical surface on open up well-regulated through-hole, drawn out of described anode canister from Son, and accelerate to form focused ion beam.
Compared with prior art, have the beneficial effect that, due to using spherical surface aperture plate, ion beam draws possessed by the utility model Effective focused ion beam is formed after accelerating out, energy bombardment target can be concentrated to carry out ion beam deposition processing.Averager simultaneously It is to be mounted on the side of ion source with ion source separate design, averager, averager filament is not bombarded directly by ion beam, in With it is high-efficient, burn-out life is long, convenient for installation and maintenance.
Detailed description of the invention
Fig. 1 is the ion beam deposition focusedion source and its arrangement schematic diagram in a vacuum chamber of the utility model.
In figure: 1, ion source;2, vacuum chamber;3, target platform;4, averager;5, target;11, arc chamber;12, anode canister; 13, magnetic pole;14, screen is focused;15, accelerating grid is focused;16, cathode filament;17, plasma;18, air taking port;19, focus from Beamlet.
Specific embodiment
The preferred embodiment in the utility model is illustrated below in conjunction with attached drawing, it should be understood that described herein preferred Embodiment is only used for describing and explaining the present invention, and is not intended to limit the utility model.
As shown in Figure 1, a kind of ion beam deposition focusedion source 1, including arc chamber 11, anode canister 12, magnetic pole 13, focusing Screen 14 focuses accelerating grid 15, the composition of cathode filament 16.
The arc chamber 11 is cylindrical body made of a kind of stainless steel material, for generating gas ionization, forms plasma Body.The anode canister 12 is cylindrical body made of a kind of stainless steel material, be mounted in the arc chamber 11 and with the electric discharge It insulate room 11.
The magnetic pole 13 is a kind of high temperature resistant ferromagnetism stick, is mounted on the outside of anode canister 12, can uniformly install four or six Or eight, electromagnetic field is established in the anode canister 12.
Focusing screen 14 and focusing accelerating grid 15 is the netted aperture plate of spherical surface made of a kind of refractory metal material, is successively pacified Mounted in the front of the arc chamber 11.The focusing accelerating grid 15 keeps certain distance simultaneously exhausted mutually with the focusing screen 14 Edge.Well-regulated through-hole is opened up on the focusing screen 14 and focusing 15 spherical surface of accelerating grid, and all through-holes are aligned one by one.
The cathode filament 16 is mounted on the front of the air taking port 18 of the arc chamber 11.When cathode filament passes to electric current When, a large amount of electronics are generated, the gas being sent into from the air taking port 18 is ionized and forms plasma 17 in the anode canister 12. The air taking port 18 is the channel of the feeding gas opened up at the top of the arc chamber 11.
When gas is sent into from the air taking port 18,16 launching electronics of cathode filament of energization ionize be sent into gas, electricity Gas ion from after is spread in anode canister 12.Due to there is magnetic fields, the electronics that cathode filament 16 emits accelerates collision gas Body molecule or atom, are adequately ionized gas more.
The focusing screen 14 applies a biggish positive potential, and the focusing accelerating grid 15 applies a negative potential.By In the effect of potential difference, ionized gas ion can pass sequentially through the through-hole for focusing screen 14 and focus 15 through-hole of accelerating grid And accelerate to draw to vacuum chamber 2.Since the focusing screen 14 and focusing accelerating grid 15 are spherical surface aperture plate, the shaped ion beam of extraction At focused ion beam 19.
Target platform 3 is set immediately below 19 beam spot of focused ion beam, and fixes target 5 on target surface.It is described focus from Beamlet 19 bombards target 5, and 5 atom of target is sputtered out and be deposited on workpiece according to certain rules, forms ion beam Sputter coating.
The averager 4 is mounted on the side position of ion source 1, and the filament of averager 4 is towards the focused ion beam 19.When When the averager 4 is powered, launching electronics disperse neutralizes positive charge in 19 He of focused ion beam in the focused ion beam 19 Accumulation on 5 surface of target.
When the focusing screen 14 changes parallel screen and parallel accelerating grid into accelerating grid 15 is focused, at this moment ion source 1 is drawn Out and accelerate to obtain parallel ion beam, the microfabrications such as ion beam etching and the cleaning of material can be carried out.
The above is only the better embodiment of the utility model, is not construed as the limit to the scope of the utility model System, and the scope of the claims that the utility model is advocated is not limited thereto, all personages for being familiar with this field skill, according to Technology contents disclosed by the utility model, can think easily and equivalence changes, the protection scope of the utility model should all be fallen into It is interior.

Claims (2)

1. a kind of ion beam deposition focusedion source characterized by comprising
Arc chamber (11), cylindrical body made of a kind of stainless steel material form plasma for generating gas ionization;
Anode canister (12), cylindrical body made of a kind of stainless steel material, be mounted in the arc chamber (11) and with the electric discharge Room (11) insulation;
Magnetic pole (13), a kind of high temperature resistant ferromagnetism stick establish electromagnetic field in the anode canister (12), accelerate electron collision gas The chance of molecule or atom, is adequately ionized gas;
It focuses screen (14), the netted aperture plate of spherical surface made of a kind of refractory metal material is mounted on the arc chamber (11) Front;
It focuses accelerating grid (15), the netted aperture plate of spherical surface made of a kind of refractory metal material is mounted on the focusing screen (14) front keeps certain distance and mutual insulating with the focusing screen (14);
Cathode filament (16) is mounted on the front adjacent of the air taking port (18) of the arc chamber (11), generates largely for heating Electronics ionizes the gas being sent into from the air taking port (18) and forms plasma (17).
2. ion beam deposition focusedion source according to claim 1, which is characterized in that the focusing screen (14) and poly- Well-regulated through-hole is opened up on burnt accelerating grid (15) spherical surface, draws ion from the anode canister (12) is interior, and accelerate to form focusing Ion beam (19).
CN201920031293.8U 2019-01-09 2019-01-09 Ion beam deposition focusedion source Expired - Fee Related CN209312712U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201920031293.8U CN209312712U (en) 2019-01-09 2019-01-09 Ion beam deposition focusedion source

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201920031293.8U CN209312712U (en) 2019-01-09 2019-01-09 Ion beam deposition focusedion source

Publications (1)

Publication Number Publication Date
CN209312712U true CN209312712U (en) 2019-08-27

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201920031293.8U Expired - Fee Related CN209312712U (en) 2019-01-09 2019-01-09 Ion beam deposition focusedion source

Country Status (1)

Country Link
CN (1) CN209312712U (en)

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CF01 Termination of patent right due to non-payment of annual fee

Granted publication date: 20190827

Termination date: 20210109

CF01 Termination of patent right due to non-payment of annual fee