CN209298118U - A kind of resistance type memory construction - Google Patents
A kind of resistance type memory construction Download PDFInfo
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- CN209298118U CN209298118U CN201821912223.5U CN201821912223U CN209298118U CN 209298118 U CN209298118 U CN 209298118U CN 201821912223 U CN201821912223 U CN 201821912223U CN 209298118 U CN209298118 U CN 209298118U
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- resistance type
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- type memory
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- mosfet pipe
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Abstract
The utility model discloses a kind of resistance type memory constructions, and the bit line of resistance type storage unit is corresponded to including MOSFET pipe, a plurality of resistance type storage units and plural item；The source electrode of the MOSFET pipe is connected to source electrode line, and grid is connected to wordline, and drain electrode is connected respectively to one end of each resistance type storage unit, and the other end of each resistance type storage unit is connected to its corresponding bit line.The utility model can reduce the area of resistance type memory, improve the storage density of resistance type memory.
Description
Technical field
The utility model relates to memory technology fields, and in particular to a kind of resistance type memory construction.
Background technique
Recently as the rapid development of computer technology, Internet technology, nonvolatile semiconductor memory member is in semiconductor row
Play the part of more and more important role in industry.In nonvolatile semiconductor memory member, even if when power supply is cut off, the basic unit of device
Still keep the data stored in basic unit.Resistive random access memory (RRAM) (such as RRAM, MRAM, FeRAM, PRAM) is a kind of new
Type nonvolatile memory, the mechanism of work are to trigger reversible resistance transition effect, i.e. alive work outside in external electric field
Under, the resistance of device reversible transition between low resistance state (" 0 ") and high-impedance state (" 1 "), and obtained resistance is in dispatch from foreign news agency
It can be remained behind after the removal of field.Resistor-type memory is due to high read or write speed, high integration and multilevel storage ability
The features such as, and become the hot spot studied at this stage.
Referring to figure 1, existing resistance type memory is usually by a MOSFET pipe M1 and a resistance type storage unit
R1 composition, when its wordline WL voltage is high, the wordline WL of this unit is selected, can be written and read at this time.With
The area of the improvement of technique, resistance type memory is limited by MOSFET pipe.
Summary of the invention
The goal of the invention of the utility model is to provide a kind of resistance type memory construction, can reduce the face of resistance type memory
Product improves the storage density of resistance type memory.
To achieve the above object of the invention, the technical solution adopted in the utility model is: a kind of resistance type memory construction, including
MOSFET pipe, a plurality of resistance type storage units and plural item correspond to the bit line of resistance type storage unit；
The source electrode of the MOSFET pipe is connected to source electrode line, and grid is connected to wordline, and drain electrode is connected respectively to each resistance type and deposits
One end of storage unit, the other end of each resistance type storage unit are connected to its corresponding bit line, have in each bit line and only one
Item is set to read-write voltage.
Above, only select wherein a bit line set read-write voltage, other bit line floatings are not read and write.
In above-mentioned technical proposal, the MOSFET pipe is that N-type MOSFET is managed.
In above-mentioned technical proposal, the quantity of the resistance type storage unit is 50,000 ~ 5,000,000.
In above-mentioned technical proposal, the area of the MOSFET pipe accounts for the 30% ~ 50% of resistance type memory area.For MOSFET
Accounting of the area of pipe in resistance type memory area, the utility model are not specifically limited, it is typical but non-limiting can be with
30%, 31%, 32%, 33%, 34%, 35%, 36%, 37%, 38%, 39%, 40%, 41%, 42%, 43%, 44%, 45%, 46%, 47%,
48%,49%,50%.Preferably 40%.
Since above-mentioned technical proposal is used, the utility model has the advantage that compared with prior art
1. the utility model is by being connected in parallel multiple resistance type storage units in the drain electrode of MOSFET pipe, and each resistance type is deposited
Storage unit is all connected with a bit line, is read and write by setting read-write voltage to bit line to control corresponding resistance type storage unit, can
Reduce the area of resistance type memory, improves the storage density of resistance type memory；
2. one MOSFET pipe of units shared that each resistance type of the utility model stores, can suitably increase MOSFET pipe
Width reduces the conducting resistance of MOSFET pipe, improves the success rate of read-write.
Detailed description of the invention
Fig. 1 is the structural schematic diagram of the existing resistance type memory in the utility model background technique.
Fig. 2 is the structural schematic diagram of the resistance type memory of the utility model embodiment one.
Specific embodiment
The utility model is further described with reference to the accompanying drawings and embodiments:
Embodiment one:
It is shown in Figure 2, a kind of resistance type memory construction, including MOSFET pipe M1, a plurality of resistance type storage unit R1,
R2 ... RN corresponded to plural item resistance type storage unit bit line BL1, BL2 ... BLN；
The source electrode of the MOSFET pipe M1 is connected to source electrode line SL, and grid is connected to wordline WL, and drain electrode is connected respectively to each
One end of resistance type storage unit, the other end of each resistance type storage unit are connected to its corresponding bit line, and specifically, bit line BL1 connects
It is connected to resistance type storage unit R1, bit line BL2 is connected to resistance type storage unit R2, until bit line BLN is connected to resistance type storage unit
RN only sets read-write voltage to a wherein bit line when being written and read, and other bit line floatings are not read and write.
In the present embodiment, the MOSFET pipe M1 is N-type MOSFET pipe.
In the present embodiment, the quantity of the resistance type storage unit can be 50,000 ~ 5,000,000 according to the needs of actual use
It is a.
In the present embodiment, the area of the MOSFET pipe M1 accounts for the 40% of resistance type memory area.
The resistance type memory of the utility model is at work: when wordline WL voltage is high, the memory is selected, herein
On the basis of, if source electrode line SL and bit line BL1 set read-write voltage, resistance type storage unit R1 is selected to be written and read, other bit lines
Floating；When source electrode line SL and bit line BL2 set read-write voltage, then resistance type storage unit R2 is selected is written and read, and other bit lines are floating
It is empty；Until source electrode line SL and bit line BLN sets read-write voltage, then resistance type storage unit RN is selected is written and read, and other bit lines are floating
It is empty.
The foregoing description of the disclosed embodiments can be realized professional and technical personnel in the field or using originally practical new
Type.A variety of modifications of above-described embodiment will be readily apparent to those skilled in the art, determine herein
The General Principle of justice can be realized in other embodiments without departing from the spirit or scope of the present utility model.Cause
This, the utility model is not intended to be limited to above-described embodiment shown in this article, and is to fit to and principles disclosed herein
The widest scope consistent with features of novelty.
Claims (4)
1. a kind of resistance type memory construction, it is characterised in that: including MOSFET pipe, a plurality of resistance type storage units and plural item pair
Answer the bit line of resistance type storage unit；
The source electrode of the MOSFET pipe is connected to source electrode line, and grid is connected to wordline, and it is single that drain electrode is connected respectively to each resistance type storage
One end of member, the other end of each resistance type storage unit is connected to its corresponding bit line, has in each bit line and only one
Item is set to read-write voltage；
The area of the MOSFET pipe accounts for the 30% ~ 50% of resistance type memory area.
2. resistance type memory construction according to claim 1, it is characterised in that: the MOSFET pipe is that N-type MOSFET is managed.
3. resistance type memory construction according to claim 1, it is characterised in that: the quantity of the resistance type storage unit is 5
Ten thousand ~ 5,000,000.
4. resistance type memory construction according to claim 1, it is characterised in that: the area of the MOSFET pipe accounts for resistance type and deposits
The 40% of reservoir area.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821912223.5U CN209298118U (en) | 2018-11-20 | 2018-11-20 | A kind of resistance type memory construction |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201821912223.5U CN209298118U (en) | 2018-11-20 | 2018-11-20 | A kind of resistance type memory construction |
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| CN209298118U true CN209298118U (en) | 2019-08-23 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109300933A (en) * | 2018-11-20 | 2019-02-01 | 苏州大学 | A kind of resistance type memory construction |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109300933A (en) * | 2018-11-20 | 2019-02-01 | 苏州大学 | A kind of resistance type memory construction |
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