CN209282235U - A kind of light-emitting diode encapsulation structure - Google Patents
A kind of light-emitting diode encapsulation structure Download PDFInfo
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- CN209282235U CN209282235U CN201821792317.3U CN201821792317U CN209282235U CN 209282235 U CN209282235 U CN 209282235U CN 201821792317 U CN201821792317 U CN 201821792317U CN 209282235 U CN209282235 U CN 209282235U
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- light
- led chip
- packaging plastic
- emitting diode
- encapsulation structure
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Abstract
A kind of light-emitting diode encapsulation structure, it include: bracket, LED chip, inner liner and packaging plastic, it is characterized by: the branch is provided with cavity structure, the LED chip is on bracket, the packaging plastic includes wavelength conversion layer and is located in the LED chip, the packaging plastic and the bracket form accommodating cavity, and the inner liner is located in accommodating cavity.Compared with prior art, the utility model is using chips such as purple LED chip or blue-ray LEDs as excitaton source, excitation wavelength conversion layer, and the methyl silica gel for resistance to purple light of arranging in pairs or groups or methyl silicon resin and inner liner, to realize the LED encapsulation structure of high reliability, bloom quality.
Description
Technical field
The utility model relates to a kind of LED technology, in particular to a kind of light emitting diode device encapsulating structure.
Background technique
Currently, white light emitting diode (English abbreviation LED) is mainly by blue chip excitation wavelength transition material come real
It is existing, but the spectrum continuity that this scheme obtains is bad, especially when colour temperature is higher, can there is apparent blue light wave
Peak causes colour rendering index relatively low.Even if improving colour rendering index by allotment wavelength conversion material ratio, the peak of blue light still can be deposited
?.This scheme is no longer satisfied in the market to light quality increasingly higher demands, and the program can also cause it is certain
Blue light harm.
At present in the packaging plastic of LED encapsulation structure, generallys use silica gel or silicon resin glue is packaged, but silica gel: oxygen flow
Property is big, in the environment of oxygen-containing sulfur-bearing, oxidizable vulcanization, and silicon resin glue heatproof is low, the easy dead lamp under the larger environment of the temperature difference,
And colloid is easy to crack.
Summary of the invention
The purpose of this utility model is that: a kind of light-emitting diode encapsulation structure is provided, use purple light or purple light and
The mode of blue light collocation is as excitaton source, excitation wavelength transition material, and the methyl silica gel for resistance to purple light of arranging in pairs or groups and air-tightness apply
Layer reaches the LED encapsulation of high reliability, bloom quality.
To achieve the above object, the utility model provides a kind of light-emitting diode encapsulation structure, comprising: bracket, LED core
Piece, inner liner and packaging plastic, it is characterised in that: the branch is provided with cavity structure, and the LED chip is on bracket, institute
It states packaging plastic to include wavelength conversion layer and be located in the LED chip, the packaging plastic and the bracket form accommodating cavity, and institute
Inner liner is stated to be located in accommodating cavity.
Preferably, the inner liner is located on the inner wall of the bracket.
Preferably, the inner liner is located at the upper surface and/or side surface of the LED chip.
Preferably, the inner liner is located between the lower surface and the rack inner wall of the LED chip.
Preferably, the inner liner is located inside the packaging plastic, and will at least be divided into first inside the packaging plastic
Packaging plastic and the second packaging plastic.
Preferably, the LED chip further includes bonding wire.
Preferably, the packaging plastic is methyl silica gel or methyl silicon resin.
Preferably, the LED chip selects UV LED chip or blue-light LED chip.
Preferably, the wavelength conversion layer selects blue, green, red, a kind or several therein of yellow fluorescent powder.
Preferably, the inner liner selects fluorinated polymer or silication polymer or polyimide compound.
Compared with prior art, the utility model using the chips such as purple LED chip or blue-ray LED as excitaton source,
Excitation wavelength conversion layer, and the methyl silica gel for resistance to purple light of arranging in pairs or groups or methyl silicon resin and inner liner, thus realize high reliability,
The LED encapsulation structure of bloom quality.
Other features and advantages of the utility model will illustrate in the following description, also, partly from specification
In become apparent, or understood and implementing the utility model.The purpose of this utility model and other advantages can pass through
Specifically noted structure is achieved and obtained in the specification, claims and drawings.
Detailed description of the invention
Attached drawing is used to provide a further understanding of the present invention, and constitutes part of specification, practical with this
Novel embodiment is used to explain the utility model together, does not constitute limitations of the present invention.In addition, attached drawing data are
Summary is described, is not drawn to scale.
Fig. 1 is the ultraviolet LED package structure diagram of embodiment 1.
Fig. 2 is the ultraviolet LED package structure diagram of embodiment 2.
Fig. 3 is the ultraviolet LED package structure diagram of embodiment 3.
Fig. 4 is the ultraviolet LED package structure diagram of embodiment 4.
Each label mark is as follows in figure: 101: bracket；102:LED chip；103: inner liner；104: packaging plastic；1041: the
One packaging plastic；1042: the second packaging plastics；105: bonding wire.
Specific embodiment
It is described in detail below with reference to LED encapsulation structure of the schematic diagram to the utility model, is being further described this
Before utility model, it should be understood that due to that can be transformed to specific embodiment, the utility model is not limited to
Following specific embodiments.It is also understood that being adopted since the scope of the utility model is only defined by the following claims
Embodiment is introductory, rather than restrictive.Unless otherwise stated, used herein of all technologies and section
It is identical as the meaning that those skilled in the art are commonly understood by learn term.
Embodiment 1
As shown in Fig. 2, a kind of light-emitting diode encapsulation structure provided in this embodiment, comprising: bracket 101, LED chip
102, inner liner 103 and packaging plastic 104, wherein bracket 101 is equipped with cavity structure, the LED chip comprising bonding wire 105 102
In on bracket, packaging plastic 104 includes wavelength conversion layer and is located in LED chip, and packaging plastic 104 and bracket 101 form accommodating cavity,
And inner liner 103 is located in accommodating cavity.
In the present invention, bracket 100 can be integrated molding, be also possible to separate molding, that is, include upper bracket with
Lower direct part, wherein upper bracket is in bowl structure, and lower bracket is in planar structure；LED chip 102 can select ultraviolet LED core
The chip of piece or blue-light LED chip or other wavelength can be one or several kinds of groups of aforementioned different wave length LED chip
It closes, the preferred UV LED chip of the present embodiment；Packaging plastic 104 can select methyl silica gel or methyl silicon resin or other packaging plastics；
The wavelength conversion layer mixed in packaging plastic 104 can select blue, green, red, a kind or several therein of yellow fluorescent powder
Kind.
Since in existing common packaging plastic, the performance such as the resistance to purple light of phenyl glue is bad, therefore the present embodiment preferably uses
Methyl silica gel is as packaging plastic, but methyl glue air-tightness is poor；In order to improve the performance of moisture-proof, anti-sulphur, it is therefore desirable to plate
One layer of good material of air-tightness, i.e. inner liner 103 preferably have extremely low oxygen flow, water penetration, H2The transmitance of O is less than
12g/m2/24h、O2Transmitance be less than or equal to 510cm3/m2/24h/atm；It is highly preferred that H2O、O2Transmitance be less than with
The 1/10 of lower packaging plastic, therefore oxygen can be played, anti-sulphur, the effect of waterproof, specific material its can select fluorinated polymer
Or the material of silication polymer or polyimide compound or the anti-sulphur oxygen of other chokes that block water.
LED encapsulation structure in the present embodiment can be made of following processing step:
One bracket 101 with silver coating is provided, and fixes purple LED chip or indigo plant, purple LED core on bracket 101
Piece 102 simultaneously completes bonding wire 105, then instills a certain amount of airtight material, after standing and drying, in silver-plated layer surface, LED core
An inner liner 103 is formed on piece upper surface, side surface and rack inner wall, then covers the packaging plastic 104 of mixed wavelengths conversion layer,
Such as methyl silica gel.
Compared with prior art, the utility model using the chips such as purple LED chip or blue-ray LED as excitaton source,
Excitation wavelength conversion layer, and the methyl silica gel for resistance to purple light of arranging in pairs or groups or methyl silicon resin are to maintain preferable light permeable rate and airtight
Layer is to obtain good moisture-proof, anti-sulphur, oxygen effect, to realize that acquisition high reliability, high color rendering index (CRI), spectrum are continuous
LED encapsulation structure.
Embodiment 2
As shown in Fig. 2, the present embodiment is with the difference of embodiment 1: the inner liner 103 of embodiment 1 is coated in silver coating table
On face, LED chip upper surface, side surface and rack inner wall, and the inner liner 103 of the present embodiment is only coated in silver-plated layer surface
And on rack inner wall, it is not coated in LED chip upper surface, side surface.Since inner liner has certain refractive index and light
It absorbing, thus it is possible to vary the light of LED chip light-emitting surface extracts, and impacts to LED chip light emitting anger with luminous intensity, so as to
Inner liner is played for regulating and controlling the light shape structure etc. of LED encapsulation structure；The present embodiment retains the original hair of LED chip as far as possible
Light mode and luminous intensity, and with LED chip overlay coating without directly contacting, it not will cause additional damage, and then guarantee hair
The reliability of optical diode package structure.
Embodiment 3
As shown in figure 3, the present embodiment is with the difference of embodiment 1: the inner liner 103 of embodiment 1 is coated in silver coating table
On face, LED chip upper surface, side surface and rack inner wall, and the inner liner 103 of the present embodiment be not coated in bracket with
In LED chip, but it is located at the inside of packaging plastic, and the first packaging plastic 1041 and the second envelope will be at least divided into inside packaging plastic
Fill glue 1042.First packaging plastic 1041 can choose phosphor powder layer, such as be mixed with the methyl silica gel of wavelength conversion layer, and the second envelope
Glue 1042 is filled, can choose transparent silicon glue-line, the methyl silica gel if not being mixed with wavelength conversion layer.The present embodiment embodiment is glimmering
Inner liner 103 is set between light bisque and transparent silicon glue-line, the effect of protective layer can be played.Other than Ag layers of protection plating,
Also protect phosphor powder layer not by influence of moisture.Due to some wavelength conversion layers, such as phosphor material powder, such as KSF(potassium fluosilicic,
Chemical formula is K2SiF6:Mn4+), QD(quantum dot: full name in English is Quantum Dot), silicate etc. is more sensitive to moisture,
The present embodiment embodiment plays the role of protecting wavelength conversion layer, improves the reliability of LED encapsulation structure.
LED encapsulation structure in the present embodiment can be made of following processing step:
One bracket 101 with silver coating is provided, and fixes purple LED chip or indigo plant, purple LED core on bracket 101
Piece 102 simultaneously completes bonding wire 105, then covers the first packaging plastic 1041 of mixed wavelengths conversion layer, instills one on its surface after drying
Quantitative airtight material forms an inner liner 103 on the first packaging plastic surface, then in inner liner 103 after standing and drying
Upper to cover the second packaging plastic 1042 for not being mixed with wavelength conversion material, heating is dried.
Embodiment 4
As shown in figure 4, the present embodiment is with the difference of embodiment 1: the inner liner 103 of embodiment 1 is coated in silver coating table
On face, LED chip upper surface, side surface and rack inner wall, and the inner liner 103 of the present embodiment is coated under LED chip
Between surface and the horizontal surface of rack inner wall, it is not coated in the upper surface of the inclined surface and LED chip protected in bracket
On side surface.Since the side of LED chip is the vertical plane normally close to 90 °, the engaging portion of LED chip and bracket can exist
The bad problem (if thickness is thin or even can have hole) of anti-sulfuric horizon coating (Coating), gas containing S or steam can be with
It is penetrated on the silver coating of bracket by the hole, to cause to vulcanize.The present embodiment is first to be coated on the silver coating of bracket
Inner liner 103, as protective layer, since the horizontal surface of rack inner wall is a flat surface, the coating meeting of such inner liner
It is more complete, so that it is bad to overcome the problems, such as that engaging portion is coated with.
LED encapsulation structure in the present embodiment can be made of following processing step:
Bracket 101 of the offer one with silver coating, non-crystal bonding area photoetching photoresist or water-soluble material on bracket 101,
For blocking bonding wire point, it is subsequent bonding wire reserved area, then instills a certain amount of gastight material, after standing and drying, solid
The silver-plated layer surface of crystalline region forms an inner liner 103, fixed purple light or royal purple optical chip 102, removes photoresist or water-soluble material,
A certain amount of airtight material is instilled again after completing bonding wire 105, the silver-plated layer surface in non-crystal bonding area forms an inner liner 103,
Finally cover the packaging plastic 104 of mixed wavelengths conversion layer.
It should be understood that above-mentioned specific embodiment is only the part preferred embodiment of the utility model, the above implementation
Example can also carry out various combinations, deformation.The scope of the utility model is not limited to above embodiments, all to be done according to the utility model
Any change, all category the protection scope of the utility model within.
Claims (10)
1. a kind of light-emitting diode encapsulation structure, comprising: bracket, LED chip, inner liner and packaging plastic, it is characterised in that: institute
It states branch and is provided with cavity structure, on bracket, the packaging plastic includes wavelength conversion layer and is located at described the LED chip
In LED chip, the packaging plastic and the bracket form accommodating cavity, and the inner liner is located in accommodating cavity.
2. a kind of light-emitting diode encapsulation structure according to claim 1, it is characterised in that: the inner liner is located at described
On the inner wall of bracket.
3. a kind of light-emitting diode encapsulation structure according to claim 1, it is characterised in that: the inner liner is located at described
The upper surface and/or side surface of LED chip.
4. a kind of light-emitting diode encapsulation structure according to claim 1, it is characterised in that: the inner liner is located at described
Between the lower surface of LED chip and the rack inner wall.
5. a kind of light-emitting diode encapsulation structure according to claim 1, it is characterised in that: the inner liner is located at described
Inside packaging plastic, and the first packaging plastic and the second packaging plastic will be at least divided into inside the packaging plastic.
6. a kind of light-emitting diode encapsulation structure according to claim 1, it is characterised in that: the LED chip further includes
Bonding wire.
7. a kind of light-emitting diode encapsulation structure according to claim 1, it is characterised in that: the packaging plastic selects methyl
Silica gel or methyl silicon resin.
8. a kind of light-emitting diode encapsulation structure according to claim 1, it is characterised in that: the LED chip is selected purple
Outer LED chip or blue-light LED chip.
9. a kind of light-emitting diode encapsulation structure according to claim 1, it is characterised in that: the wavelength conversion layer includes
Blue, green, red, a kind therein of yellow fluorescent powder.
10. a kind of light-emitting diode encapsulation structure according to claim 1, it is characterised in that: the inner liner selects fluorine
Fluidized polymer or silication polymer or polyimide compound.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821792317.3U CN209282235U (en) | 2018-11-01 | 2018-11-01 | A kind of light-emitting diode encapsulation structure |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201821792317.3U CN209282235U (en) | 2018-11-01 | 2018-11-01 | A kind of light-emitting diode encapsulation structure |
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| Publication Number | Publication Date |
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| CN209282235U true CN209282235U (en) | 2019-08-20 |
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| Application Number | Title | Priority Date | Filing Date |
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| CN201821792317.3U Active CN209282235U (en) | 2018-11-01 | 2018-11-01 | A kind of light-emitting diode encapsulation structure |
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Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111081847A (en) * | 2019-12-30 | 2020-04-28 | 深圳Tcl新技术有限公司 | Light emitting diode and light source device |
| CN117038830A (en) * | 2023-08-28 | 2023-11-10 | 广东光沐半导体科技有限公司 | LED sulfur-proof packaging structure and packaging technology |
-
2018
- 2018-11-01 CN CN201821792317.3U patent/CN209282235U/en active Active
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN111081847A (en) * | 2019-12-30 | 2020-04-28 | 深圳Tcl新技术有限公司 | Light emitting diode and light source device |
| CN117038830A (en) * | 2023-08-28 | 2023-11-10 | 广东光沐半导体科技有限公司 | LED sulfur-proof packaging structure and packaging technology |
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Address after: Yuanqian village, Shijing Town, Nan'an City, Quanzhou City, Fujian Province Patentee after: QUANZHOU SAN'AN SEMICONDUCTOR TECHNOLOGY Co.,Ltd. Address before: 361009 no.1721-1725, Luling Road, Siming District, Xiamen City, Fujian Province Patentee before: QUANZHOU SAN'AN SEMICONDUCTOR TECHNOLOGY Co.,Ltd. |