CN209260256U

CN209260256U - High temperature CVD equipment

Info

Publication number: CN209260256U
Application number: CN201822192437.6U
Authority: CN
Inventors: 张纪才
Original assignee: Beijing University of Chemical Technology
Current assignee: Beijing University of Chemical Technology
Priority date: 2018-12-25
Filing date: 2018-12-25
Publication date: 2019-08-16
Anticipated expiration: 2028-12-25

Abstract

The utility model discloses a kind of high temperature CVD equipments, comprising: the reaction tube with air inlet and exhaust outlet, successively there is the first heating mechanism in the external setting of reaction tube, second heating mechanism and heat preservation mechanism, have and the first heating mechanism in the inside of reaction tube, second heating mechanism and heat preservation mechanism respectively correspond the first temperature region to be formed, second temperature region and third temperature region, and, at least cooling body is additionally provided between the second heating mechanism and reaction tube, heat-shield mechanism is additionally provided with inside reaction tube, and there is gap between heat-shield mechanism and the tube wall of reaction tube.High temperature CVD equipment provided by the utility model combines different heating modes and heats to consersion unit, while preventing damage of the high temperature to quartz material reaction pipe outer wall using setting heat-shield mechanism.

Description

High temperature CVD equipment

Technical field

In particular to a kind of high temperature CVD equipment of the utility model, belongs to semiconductor production equipment technical field.

Background technique

Chemical vapor deposition (CVD) is a kind of important method for preparing material.Due to required material property to be prepared Difference is different to the temperature requirement of growth apparatus.For some specific semiconductor materials, for example, AlN, BN, GaN and they Alloy etc., growth temperature is generally higher than 1000 DEG C.With the raising of Al or B component, required growth temperature is also needed It improves.There are many kinds of the methods of existing growing AIN, BN, GaN and its alloy, such as gas phase epitaxy of metal organic compound method (MOCVD), ammonia heat method, physical vapor transport (PVT) and hydride vapour phase epitaxy method (HVPE) etc..Although mocvd method can The thin-film material of large area AlN, BN, GaN and its alloy is prepared, but is limited to growth rate and is difficult to improve, it is several hundred preparing It is not dominant in terms of the self-supporting mono-crystal substrate of micron.Although PVT method can be improved higher life in terms of preparing AlN material Long rate, and crystalline quality is also very high that (dislocation density can reduce to 10⁴cm^-2), but usually exist in material highly dense The point defect of degree and to cause material to be difficult to transparent, constrain it in the application of deep ultraviolet light electronic device.Simultaneously because lacking big The seed crystal of size, it is difficult to prepare large area self-supporting material.Although ammonia heat method obtains prominent in terms of preparing GaN self-supporting material It is broken but at the early-stage in terms of AlN preparation, it is not yet reported that in terms of preparing BN material.HVPE method growth rate is very fast, fits It closes large area and prepares substrate material.The ultraviolet permeability of the material of preparation is relatively high, is suitble to preparation deep ultraviolet light electronic device.

Common HVPE generallys use tube wall of the quartz material as reaction chamber, to guarantee the cleanliness of reaction chamber. At least two warm areas are provided simultaneously with, a low-temperature space, which is reacted for metal Al, Ga or simple substance B with HCl, generates III group gas phase Source, second high-temperature region react semiconductor single crystal material required for growth with ammonia for III group gaseous sources.GaN growth temperature Degree is generally at 1000 DEG C or so, and the heatproof of quartz material tube wall is generally at 1200 DEG C or so, so the HVPE growth of GaN is to setting Relatively low for requiring, heating furnace can use traditional Resistant heating furnace.And the growth temperature of AlN, BN generally exist 1400 DEG C or more, far beyond the temperature-resistant material limit of quartz, therefore, it is difficult to use traditional Resistant heating furnace.Still it is adopting In the case where doing reaction chamber outer wall with quartz material, it is necessary to find suitable heating method and heat-insulated mode, while realize both Quartzy outer wall in HVPE equipment can be protected, and is able to achieve the design of two warm areas of height.

Utility model content

The main purpose of the utility model is to provide a kind of high temperature CVD equipments, with overcome the deficiencies in the prior art.

For the aforementioned purpose of utility model of realization, the technical solution adopted in the utility model includes:

The utility model embodiment discloses a kind of high temperature CVD equipment comprising: the reaction with air inlet and exhaust outlet Pipe successively has the first heating mechanism, the second heating mechanism and heat preservation mechanism in the external setting of the reaction tube, in the reaction The inside of pipe have with the first heating mechanism, the second heating mechanism and heat preservation mechanism respectively correspond the first temperature region to be formed, Second temperature region and third temperature region, first heating mechanism can at least heat and keep the temperature of the first temperature region Degree is the first temperature, and the temperature that second heating mechanism can at least heat and keep second temperature region is second temperature, The temperature that the heat preservation mechanism is at least able to maintain third temperature region is third temperature, and, at least in second heating It is additionally provided with cooling body between mechanism and the reaction tube, heat-shield mechanism is additionally provided with inside reaction tube, and described heat-insulated There is gap between mechanism and the tube wall of the reaction tube；Wherein, the second temperature is greater than the first temperature, and third temperature is less than First temperature and/or second temperature.

In some more specific embodiments, the heat-shield mechanism is arranged in the second temperature region.

In some more specific embodiments, the cooling body includes the thermal conductive ceramic being set in outside reaction tube Pipe or cooling water pipe；Thermal conductive ceramic pipe can be aluminium nitride ceramics pipe, but not limited to this.

In some more specific embodiments, the heat-shield mechanism includes the instlated tubular being set in inside reaction tube, The material of instlated tubular can be aluminum oxide ceramic, zirconia ceramic, graphite felt etc., but not limited to this.

In some more specific embodiments, second heating mechanism includes the sense around reaction tube setting Answer coil.

In some more specific embodiments, first heating mechanism includes Resistant heating furnace.

In some more specific embodiments, the heat preservation mechanism includes Resistant heating furnace or sets around reaction tube The insulating layer set；Insulating layer can be oxidation furnace ceramic tube, zirconia ceramics pipe, calcium silicate heat-preserving pipe, rock wool blanket etc., but unlimited In this.

In some more specific embodiments, first temperature region is located at close to one end of air inlet, described Third temperature region is located at close to one end of exhaust outlet.

In some more specific embodiments, first temperature is 400-1000 DEG C, and the second temperature is 1400 DEG C or more.

In some more specific embodiments, the reaction tube is quartz ampoule.

Compared with prior art, high temperature CVD equipment provided by the utility model, structure is simple, easy to use；It is combined Different heating modes heat consersion unit, realize low-temperature space and prepare semiconductor monocrystal that group III source preparation needs High-temperature region needed for material, while damage of the high temperature to quartz material reaction pipe outer wall is prevented using setting heat-shield mechanism.

Detailed description of the invention

Fig. 1 is a kind of structural schematic diagram of high temperature CVD equipment in the utility model embodiment 1.

Specific embodiment

In view of deficiency in the prior art, inventor is studied for a long period of time and is largely practiced, and is able to propose that this is practical new The technical solution of type.The technical solution, its implementation process and principle etc. will be further explained as follows.

In some more specific embodiments, the reaction tube is quartz ampoule.

The technical solution, its implementation process and principle etc. will be further explained in conjunction with attached drawing as follows.

Embodiment 1

Referring to Fig. 1, a kind of high temperature CVD equipment comprising: the crystal reaction tube 1 with air inlet and exhaust outlet, in institute The external setting for stating reaction tube successively has Resistant heating furnace 2, the induction coil 3 for being passed through alternating current and insulating layer or resistance wire to add Hot stove 4, wherein induction coil 3 is wound around the outside of reaction tube 1, and is additionally provided between induction coil 3 and reaction tube 1 cold But mechanism 6, cooling structure can be the thermal conductive ceramic pipe or cooling water pipe being set in outside reaction tube 1；Resistant heating The one end of crystal reaction tube close to air inlet is arranged in furnace 2, and insulating layer or Resistant heating furnace 4 are positioned close to the one of exhaust outlet End；Have in the inside of reaction tube and is respectively corresponded with Resistant heating furnace 2, induction coil 3 and insulating layer or Resistant heating furnace 4 The first temperature region 11, second temperature region 12 and the third temperature region 13 formed, Resistant heating furnace 2 at least can be to anti- Should pipe directly heat and keep the first temperature region 11 temperature be the first temperature, induction coil 3 at least can be with induction heating Mode (mode of non-contact heating) the second temperature region of reaction tube is carried out heating and keeping second temperature region 12 Temperature is second temperature, and the temperature that insulating layer or Resistant heating furnace 4 are at least able to maintain third temperature region 13 is third temperature Degree, the first temperature region are that can be realized metal Al, Ga or simple substance B reacts the cryogenic thermostats of generation III group gaseous sources with HCl Area, the temperature (i.e. the first temperature) of the first temperature region are 400-1000 DEG C, and second temperature region is high-temperature region, second temperature area The temperature (i.e. second temperature) in domain is 1400 DEG C or more, and third temperature region is cooling area, the third temperature of third temperature region Less than the first temperature and/or second temperature, third temperature is 100-1000 DEG C；And in the corresponding reaction tube 1 of induction coil 3 The second temperature region in portion is additionally provided with instlated tubular 5, and instlated tubular 5 is set in the inside of reaction tube 1, and in instlated tubular 5 and quartz There is gap between reaction tube 1, and then heat insulating function can be reinforced, to protect crystal reaction tube.

More specifically, it realizes that metal Al, Ga or simple substance B are reacted with HCl in the first temperature region and generates III group gas phase Source, and second temperature region (i.e. high-temperature region) is transported in the chamber of the same crystal reaction tube 1, high-temperature region is added using induction Hot mode, by indirect current inside the induction coil to quartz reaction pipe outer wall, antipyretic body is asked in realization crystal reaction tube Topic is promoted, and obtains the high temperature that semiconductor single crystal material preparation needs；Calandria (can be graphite support) in high-temperature region is placed on In pipeline (i.e. instlated tubular) with heat insulating function, there is certain gap between this pipeline and quartzy outer wall, play heat-insulated function Can, protect quartzy outer wall, high-temperature region to the quartzy outer wall between exhaust outlet can (thermal insulation material can be by thermal insulation material Oxidation furnace ceramics, zirconia ceramics, calcium silicate heat-preserving, rock wool blanket) package, or one section of Resistant heating furnace heat preservation is added again； When Material growth, while controlling the heating or temperature promotion speed of low-temperature space and high-temperature region respectively as needed.

It should be appreciated that above-described embodiment is only to illustrate the technical ideas and features of the present invention, it is ripe its object is to allow The personage for knowing technique can understand the content of the utility model and implement accordingly, can not limit the utility model with this Protection scope.All equivalent change or modifications according to made by the spirit of the present invention essence, should all cover in the utility model Within protection scope.

Claims

1. a kind of high temperature CVD equipment, characterized by comprising: the reaction tube with air inlet and exhaust outlet, in the reaction tube External setting successively have the first heating mechanism, the second heating mechanism and heat preservation mechanism, the inside of the reaction tube have with First heating mechanism, the second heating mechanism and heat preservation mechanism respectively correspond the first temperature region to be formed, second temperature region and Third temperature region, the temperature that first heating mechanism can at least heat and keep the first temperature region is the first temperature, The temperature that second heating mechanism can at least heat and keep second temperature region is second temperature, and the heat preservation mechanism is extremely The temperature for being able to maintain third temperature region less is third temperature, and, at least reacted in second heating mechanism with described It is additionally provided with cooling body between pipe, heat-shield mechanism is additionally provided with inside reaction tube, and the heat-shield mechanism is reacted with described There is gap between the tube wall of pipe；Wherein, the second temperature is greater than the first temperature, third temperature less than the first temperature and/or Second temperature.

2. high temperature CVD equipment according to claim 1, it is characterised in that: the heat-shield mechanism setting is in second temperature Spend region.

3. high temperature CVD equipment according to claim 1, it is characterised in that: the cooling body includes being set in reaction tube External thermal conductive ceramic pipe or cooling water pipe.

4. high temperature CVD equipment according to claim 1 or 2, it is characterised in that: the heat-shield mechanism includes being set in reaction Instlated tubular inside pipe.

5. high temperature CVD equipment according to claim 1 or 2, it is characterised in that: second heating mechanism includes around institute State the induction coil of reaction tube setting.

6. high temperature CVD equipment according to claim 1, it is characterised in that: first heating mechanism includes that resistance wire adds Hot stove.

7. high temperature CVD equipment according to claim 1, it is characterised in that: the heat preservation mechanism includes Resistant heating furnace Or the insulating layer around reaction tube setting.

8. high temperature CVD equipment according to claim 1, it is characterised in that: first temperature region is located at close to air inlet One end of mouth, the third temperature region are located at close to one end of exhaust outlet.

9. high temperature CVD equipment according to claim 1 or 8, it is characterised in that: first temperature is 400-1000 DEG C, The second temperature is 1400 DEG C or more.

10. high temperature CVD equipment according to claim 1, it is characterised in that: the reaction tube is quartz ampoule.