CN209231408U - A kind of preposition amplification protection circuit of Photoelectric Detection - Google Patents

A kind of preposition amplification protection circuit of Photoelectric Detection Download PDF

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Publication number
CN209231408U
CN209231408U CN201821843808.6U CN201821843808U CN209231408U CN 209231408 U CN209231408 U CN 209231408U CN 201821843808 U CN201821843808 U CN 201821843808U CN 209231408 U CN209231408 U CN 209231408U
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China
Prior art keywords
capacitor
operational amplifier
resistance
resistor
photodiode
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CN201821843808.6U
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Chinese (zh)
Inventor
周伟伟
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SHANGHAI WEIPAN MICROELECTRONIC Co.,Ltd.
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Huan Jue (shanghai) Integrated Circuit Co Ltd
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Abstract

The utility model relates to a kind of preposition amplifications of Photoelectric Detection to protect circuit, including two operational amplifiers, four resistance, four capacitors and a photodiode, the positive input terminal of the connection of first resistor one end third capacitor and the first operational amplifier, the output end of the other end connection second operational amplifier of first resistor, the negative input end of first operational amplifier connects second resistance, the other end and third capacity earth of second resistance, photodiode is in parallel with third capacitor, 4th capacitor is in parallel with second resistance, the output end of first operational amplifier connects the negative input end of second operational amplifier by 3rd resistor, the positive input terminal of second operational amplifier is grounded, it is connected across between the negative input end of second operational amplifier and output end after second capacitor and the 4th resistance concatenation, first capacitor is in parallel with first resistor.This circuit structure is compact, and rationally, noise is low, stable and reliable operation, can be applied to high voltage optical fiber current sensor for design.

Description

A kind of preposition amplification protection circuit of Photoelectric Detection
Technical field
The utility model relates to technical field of circuit design more particularly to a kind of preposition amplification of Photoelectric Detection to protect circuit.
Background technique
It is exactly the useful signal being modulated on light carrier to be demodulated come realization optical signal to electricity using photoelectric detecting method The conversion of signal.Because the optical signal of optical fiber connector output is usually very faint, the interference of various noises directly affects useful letter Number measurement accuracy, this requires photodetectors within the scope of the launch wavelength of light source used with high-responsivity, small additional Noise, the fast speed of response and enough bandwidth with data transfer rate required for capable of handling.In addition, what is be connected with detector is preposition Amplifying circuit should also be as design rationally, and late-class circuit work is driven under the premise of meeting low noise.
Utility model content
In view of this, the purpose of the utility model is to provide a kind of preposition amplifications of Photoelectric Detection to protect circuit, it is existing to solve There is the deficiency in technology.
In order to achieve the above object, the purpose of this utility model is achieved through the following technical solutions:
There is provided a kind of preposition amplification protection circuit of Photoelectric Detection, wherein including the first operational amplifier, the second operation amplifier Device, first resistor, second resistance, 3rd resistor, the 4th resistance, first capacitor, the second capacitor, third capacitor, the 4th capacitor and Photodiode, one end of the first resistor connect the third capacitor one end and first operational amplifier it is just defeated Enter end, the other end of the first resistor connects the output end of the second operational amplifier, first operational amplifier Negative input end connects one end of the second resistance, the other end difference of the other end of the second resistance and the third capacitor Ground connection, the photodiode is in parallel with the third capacitor, and the 4th capacitor is in parallel with the second resistance, and described first The output end of operational amplifier connects the negative input end of the second operational amplifier, second fortune by the 3rd resistor The positive input terminal ground connection of amplifier is calculated, is connected across second operation amplifier after second capacitor and the 4th resistance concatenation Between the negative input end of device and the output end of the second operational amplifier, the first capacitor is in parallel with the first resistor.
Circuit is protected in the above-mentioned preposition amplification of Photoelectric Detection, wherein the photodiode the selection of material is the PIN of InGaAs Photodiode.
Circuit is protected in the above-mentioned preposition amplification of Photoelectric Detection, wherein first operational amplifier and second operation are put Big device selects OPA129.
Compared with the prior art, the utility model has the beneficial effects that:
Which has a compact structure and a reasonable design, noise is low, stable and reliable operation, can be applied to high voltage optical fiber current sensor.
Detailed description of the invention
The attached drawing for constituting a part of the utility model is used to provide a further understanding of the present invention, this is practical new The illustrative embodiments and their description of type are not constituteed improper limits to the present invention for explaining the utility model.? In attached drawing:
Fig. 1 shows the structural schematic diagram of the utility model.
Specific embodiment
The following will be combined with the drawings in the embodiments of the present invention, carries out the technical scheme in the embodiment of the utility model Clearly and completely describe, it is clear that the described embodiments are only a part of the embodiments of the utility model, rather than whole Embodiment.Based on the embodiments of the present invention, those of ordinary skill in the art are without creative efforts Every other embodiment obtained, fall within the protection scope of the utility model.
It should be noted that in the absence of conflict, the feature in the embodiments of the present invention and embodiment can To be combined with each other.
Refering to what is shown in Fig. 1, the utility model Photoelectric Detection preposition amplification protection circuit includes the first operational amplifier A1, the Two operational amplifier A2, first resistor R1, second resistance R2,3rd resistor R3, the 4th resistance R4, first capacitor C1, the second electricity Hold one end of one end connection third capacitor C3 of C2, third capacitor C3, the 4th capacitor C4 and photodiode IL, first resistor R1 With the positive input terminal of the first operational amplifier A1, the other end of first resistor R1 connects the output end of second operational amplifier A2, One end of the negative input end connection second resistance R2 of first operational amplifier A1, the other end and third capacitor C3 of second resistance R2 The other end be grounded respectively, photodiode IL is in parallel with third capacitor C3, and the 4th capacitor C4 is in parallel with second resistance R2, first The output end of operational amplifier A1 passes through the negative input end of 3rd resistor R3 connection second operational amplifier A2, the second operation amplifier The negative input of second operational amplifier A2 is connected across after the positive input terminal ground connection of device A2, the second capacitor C2 and the 4th resistance R4 concatenation Between end and the output end of second operational amplifier A2, first capacitor C1 is in parallel with first resistor R1.In the technical program, photoelectricity Diode IL the selection of material is the PIN photodiode of InGaAs, and receiving area is big, and sensitivity level is high, the first operational amplifier A1 and second operational amplifier A2 select OPA129.Second resistance R2 is to compensate for missing because of the direct current caused by R1 is excessive Difference, the shunt capacitance C4 on R2 is to remove the clutter noise on R2.It is required according to practical power frequency component, R1=2M can be taken Ω, C1=800pF, R2=100k Ω, C4=0.1 μ F, R3=50k Ω, R4=1k Ω, C2=1 μ F.
From above-described embodiment as can be seen that the advantage of the utility model is:
Which has a compact structure and a reasonable design, noise is low, stable and reliable operation, can be applied to high voltage optical fiber current sensor.
Specific embodiment of the utility model is described in detail above, but the utility model be not restricted to it is above The specific embodiment of description, it is merely an example.To those skilled in the art, any equivalent modifications and substitution be also all Among the scope of the utility model.Therefore, equal transformation made under the spirit and scope for not departing from the utility model And modification, should all it cover in the scope of the utility model.

Claims (3)

1. circuit is protected in a kind of preposition amplification of Photoelectric Detection, which is characterized in that including the first operational amplifier, the second operation amplifier Device, first resistor, second resistance, 3rd resistor, the 4th resistance, first capacitor, the second capacitor, third capacitor, the 4th capacitor and Photodiode, one end of the first resistor connect the third capacitor one end and first operational amplifier it is just defeated Enter end, the other end of the first resistor connects the output end of the second operational amplifier, first operational amplifier Negative input end connects one end of the second resistance, the other end difference of the other end of the second resistance and the third capacitor Ground connection, the photodiode is in parallel with the third capacitor, and the 4th capacitor is in parallel with the second resistance, and described first The output end of operational amplifier connects the negative input end of the second operational amplifier, second fortune by the 3rd resistor The positive input terminal ground connection of amplifier is calculated, is connected across second operation amplifier after second capacitor and the 4th resistance concatenation Between the negative input end of device and the output end of the second operational amplifier, the first capacitor is in parallel with the first resistor.
2. circuit is protected in the preposition amplification of Photoelectric Detection as described in claim 1, which is characterized in that the photodiode selects material Material is the PIN photodiode of InGaAs.
3. circuit is protected in the preposition amplification of Photoelectric Detection as described in claim 1, which is characterized in that first operational amplifier and The second operational amplifier selects OPA129.
CN201821843808.6U 2018-11-09 2018-11-09 A kind of preposition amplification protection circuit of Photoelectric Detection Active CN209231408U (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
CN201821843808.6U CN209231408U (en) 2018-11-09 2018-11-09 A kind of preposition amplification protection circuit of Photoelectric Detection

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
CN201821843808.6U CN209231408U (en) 2018-11-09 2018-11-09 A kind of preposition amplification protection circuit of Photoelectric Detection

Publications (1)

Publication Number Publication Date
CN209231408U true CN209231408U (en) 2019-08-09

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
CN201821843808.6U Active CN209231408U (en) 2018-11-09 2018-11-09 A kind of preposition amplification protection circuit of Photoelectric Detection

Country Status (1)

Country Link
CN (1) CN209231408U (en)

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Effective date of registration: 20201230

Address after: Room 803, building 33, no.258, Xinzhuan Road, Songjiang high tech park, Caohejing Development Zone, Songjiang District, Shanghai, 201612

Patentee after: SHANGHAI WEIPAN MICROELECTRONIC Co.,Ltd.

Address before: 201210 room 508, building B, 2305 Zuchongzhi Road, Pudong New Area pilot Free Trade Zone, Shanghai

Patentee before: HUANYU (SHANGHAI) INTEGRATED CIRCUIT Co.,Ltd.

TR01 Transfer of patent right