CN209184234U - A kind of charge pump booster circuit short-circuit protection circuit - Google Patents
A kind of charge pump booster circuit short-circuit protection circuit Download PDFInfo
- Publication number
- CN209184234U CN209184234U CN201920060237.7U CN201920060237U CN209184234U CN 209184234 U CN209184234 U CN 209184234U CN 201920060237 U CN201920060237 U CN 201920060237U CN 209184234 U CN209184234 U CN 209184234U
- Authority
- CN
- China
- Prior art keywords
- circuit
- short
- charge pump
- pump booster
- booster circuit
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn - After Issue
Links
- 230000005611 electricity Effects 0.000 claims description 21
- 102100038026 DNA fragmentation factor subunit alpha Human genes 0.000 claims description 16
- 101000950906 Homo sapiens DNA fragmentation factor subunit alpha Proteins 0.000 claims description 16
- 240000002853 Nelumbo nucifera Species 0.000 claims description 6
- 235000006508 Nelumbo nucifera Nutrition 0.000 claims description 6
- 235000006510 Nelumbo pentapetala Nutrition 0.000 claims description 6
- 239000000758 substrate Substances 0.000 claims description 6
- 238000005070 sampling Methods 0.000 claims description 4
- 238000001514 detection method Methods 0.000 claims description 2
- 102100038023 DNA fragmentation factor subunit beta Human genes 0.000 description 12
- 101100277639 Homo sapiens DFFB gene Proteins 0.000 description 12
- 238000010586 diagram Methods 0.000 description 11
- 238000000034 method Methods 0.000 description 11
- HCUOEKSZWPGJIM-YBRHCDHNSA-N (e,2e)-2-hydroxyimino-6-methoxy-4-methyl-5-nitrohex-3-enamide Chemical compound COCC([N+]([O-])=O)\C(C)=C\C(=N/O)\C(N)=O HCUOEKSZWPGJIM-YBRHCDHNSA-N 0.000 description 4
- 101001109689 Homo sapiens Nuclear receptor subfamily 4 group A member 3 Proteins 0.000 description 4
- 101000598778 Homo sapiens Protein OSCP1 Proteins 0.000 description 4
- 101001067395 Mus musculus Phospholipid scramblase 1 Proteins 0.000 description 4
- 102100022673 Nuclear receptor subfamily 4 group A member 3 Human genes 0.000 description 4
- 239000003990 capacitor Substances 0.000 description 4
- 101150110971 CIN7 gene Proteins 0.000 description 3
- 101100286980 Daucus carota INV2 gene Proteins 0.000 description 3
- 101150110298 INV1 gene Proteins 0.000 description 3
- 101100397044 Xenopus laevis invs-a gene Proteins 0.000 description 3
- 101100397045 Xenopus laevis invs-b gene Proteins 0.000 description 3
- 239000013256 coordination polymer Substances 0.000 description 3
- 101100508840 Daucus carota INV3 gene Proteins 0.000 description 2
- 230000010354 integration Effects 0.000 description 2
- 238000005086 pumping Methods 0.000 description 2
- 238000011897 real-time detection Methods 0.000 description 2
- 238000004088 simulation Methods 0.000 description 2
- 238000000151 deposition Methods 0.000 description 1
- 235000013399 edible fruits Nutrition 0.000 description 1
- 238000004146 energy storage Methods 0.000 description 1
- 238000005516 engineering process Methods 0.000 description 1
- 238000007689 inspection Methods 0.000 description 1
- 238000012986 modification Methods 0.000 description 1
- 230000004048 modification Effects 0.000 description 1
- 238000012544 monitoring process Methods 0.000 description 1
- 230000000750 progressive effect Effects 0.000 description 1
Landscapes
- Dc-Dc Converters (AREA)
Abstract
The utility model discloses a kind of charge pump booster circuit short-circuit protection circuits, it include: short-circuit detecting circuit, timing trigger circuit and short-circuit protection time generation circuit, short-circuit detecting circuit is by comparing the output voltage of charge pump booster circuit and the size relation of short-circuit detecting threshold value, determine whether charge pump booster circuit occurs short circuit, and when determining generation short circuit, outputting charge pump booster circuit short circuit indication signal gives timing trigger circuit, by timing trigger circuit outputting charge pump booster circuit short-circuit signal and charge pump booster circuit shutdown signal, charge pump booster circuit is set to stop working, the short-circuit protection time, generation circuit was when short circuit duration reaches preset time, it triggers timing trigger circuit and stops outputting charge pump booster circuit shutdown signal, work normally charge pump booster circuit.The application efficiently solves in high-voltage applications, causes charge pump booster circuit to be easy the problem of burning power tube because of short circuit because charge pump booster circuit can not carry out short-circuit protection.
Description
Technical field
The utility model relates to charge pumping technique fields, more specifically, being related to a kind of charge pump booster circuit short circuit guarantor
Protection circuit.
Background technique
Charge pump booster circuit is a kind of using capacitor as the switch power converter of energy-storage travelling wave tube, has EMI
(Electromagnetic Interference, electromagnetic interference) is small, accounts for the advantages such as plate suqare is small, and system cost is low, therefore,
It is widely used in portable device electronic circuit.
General charge pump booster circuit has the boost configuration of 1.5 times and 2 times, both boost configurations all have short-circuit protection
Function and over-voltage protecting function, to guarantee effective reliably working of charge pump booster circuit.In low pressure applications, work as supply voltage
After the overvoltage protection threshold of charge pump booster circuit, open loop charge pump booster circuit enters overvoltage protection operating mode, by
Capacitor provides electric current for load.If load current is smaller, the output voltage of charge pump booster circuit drops to overvoltage protection and moves back
Threshold value out, charge pump booster circuit enter normal mode of operation.If load current is very big, charge pump booster circuit can be in weight
Carry current-limiting protection mode；If charge pump booster circuit output voltage is shorted to ground, charge pump booster circuit will be protected in short circuit
Shield mode.
But as chip integration is higher and higher, in high-voltage applications, using charge pump booster circuit as power supply electricity
When source, since charge pump booster circuit power tube source-drain voltage is without pressure-resistant problem, in order to save chip area, it will usually using low
Power tube of the voltage device as charge pump booster circuit.However, charge pump booster circuit can not carry out short circuit in high-voltage applications
Protection is easy to burn power tube because of short circuit so as to cause charge pump booster circuit.
Utility model content
In view of this, the utility model discloses a kind of charge pump booster circuit short-circuit protection circuit, to solve traditional scheme
In high-voltage applications, because charge pump booster circuit can not carry out short-circuit protection, and charge pump booster circuit is caused to be easy because of short circuit
And the problem of burning power tube.
A kind of charge pump booster circuit short-circuit protection circuit, comprising: short-circuit detecting circuit, timing trigger circuit and short circuit are protected
Protect time generation circuit, wherein the original state of the timing trigger circuit is reset state；
The input terminal of the short-circuit detecting circuit and the output end of charge pump booster circuit connect, the short-circuit detecting circuit
It is compared for detecting the output voltage of the charge pump booster circuit, and by the output voltage with short-circuit detecting threshold value,
First output end of the short-circuit detecting circuit is used for when the output voltage is less than the short-circuit detecting threshold value, output charge
It pumps booster circuit boosting and completes indication signal, the second output terminal of the short-circuit detecting circuit is used for defeated in first output end
When the time that indication signal is completed in the charge pump booster circuit boosting out is more than threshold time, outputting charge pump booster circuit is short
Road indication signal, wherein the drain terminal of the substrate of the adjustment pipe of the charging phase of the charge pump booster circuit and the adjustment pipe connects
It connects；
The timing trigger circuit is connect with the short-circuit detecting circuit, and the timing trigger circuit is used for receiving
After stating charge pump booster circuit short circuit indication signal, outputting charge pump booster circuit short-circuit signal and charge pump booster circuit are closed
Signal is closed, the charge pump booster circuit is made to stop working；
The short-circuit protection time generation circuit is connect with the timing trigger circuit, and the short-circuit protection time generates electricity
Road is used for when charge pump booster circuit short circuit duration reaches preset time, is controlled the timing trigger circuit and is stopped described in output
Charge pump booster circuit shutdown signal.
Optionally, the short-circuit detecting circuit be also used to the output voltage for determining the charge pump booster circuit not
When less than the short-circuit detecting threshold value, outputting charge pump booster circuit short circuit cancel message；
The timing trigger circuit is also used to receive the charge pump booster circuit short circuit cancel message, and outputting charge pump
Booster circuit Restart Signal makes the charge pump booster circuit rework.
Optionally, the timing trigger circuit includes: the first d type flip flop, the second d type flip flop, third d type flip flop and first
NAND gate；
The data input pin of the second d type flip flop DFF connects the output end of the short-circuit detecting circuit, for obtaining
The charge pump booster circuit short circuit indication signal of short-circuit detecting circuit output is stated, meanwhile, the clock of second d type flip flop
The data latch output of input terminal input clock signal, second d type flip flop is used for output short-circuit indication signal；
The input end of clock of first d type flip flop is connect with the data latch output of second d type flip flop, described
The short circuit indication signal that first d type flip flop is used to export second d type flip flop is as clock sampling signal, and described the
The first data latch output of one d type flip flop DFF1 sets high RST for output short-circuit and sets 1 to the third d type flip flop
End, makes the data latch output outputting charge pump booster circuit short-circuit signal of the third d type flip flop；
First NAND gate is touched with the second data latch output of first d type flip flop and the 3rd D respectively
The resetting end connection of device is sent out, first NAND gate is used for the outputting charge pump in the second data latch output non-output signal
Booster circuit shutdown signal.
Optionally, further includes: the first phase inverter, the second phase inverter and the second NAND gate；
The data input pin of the third d type flip flop DFF3 connects the output end of second phase inverter, and described second is anti-
The input terminal of phase device connects the output end of second NAND gate, and the first input end of second NAND gate connects the third
The data latch output of d type flip flop, the second input terminal of second NAND gate connect the output end of first phase inverter,
The input terminal of first phase inverter is connect with the first output end of the short-circuit detecting circuit.
Optionally, further includes: nor gate and third phase inverter；
Second d type flip flop sets 1 end ground connection, resetting end and first d type flip flop of second d type flip flop
The common end at resetting end connects the output end of the nor gate, and the first input end of the nor gate connects the third phase inverter
Output end, the second input terminal of the nor gate connects the output end of the short-circuit protection time generation circuit, the short circuit
The input terminal of guard time generation circuit be separately connected first d type flip flop the first data latch output and the third
D type flip flop sets 1 end.
From above-mentioned technical solution it is found that the utility model discloses a kind of charge pump booster circuit short-circuit protection circuit,
It include: short-circuit detecting circuit, timing trigger circuit and short-circuit protection time generation circuit, short-circuit detecting circuit is by comparing charge
The output voltage of booster circuit and the size relation of short-circuit detecting threshold value are pumped, determines whether charge pump booster circuit occurs short circuit,
And when determining that short circuit occurs for charge pump booster circuit, outputting charge pump booster circuit short circuit indication signal triggers electricity to timing
Road makes charge by timing trigger circuit outputting charge pump booster circuit short-circuit signal and charge pump booster circuit shutdown signal
Pump booster circuit stops working, and short-circuit protection time generation circuit reaches preset time in charge pump booster circuit short circuit duration
When, triggering timing trigger circuit stops outputting charge pump booster circuit shutdown signal, works normally charge pump booster circuit.Cause
This, the utility model efficiently solves in high-voltage applications, because charge pump booster circuit can not carry out short-circuit protection, and leads to electricity
Lotus pump booster circuit is easy the problem of burning power tube because of short circuit.
Detailed description of the invention
In order to illustrate the embodiment of the utility model or the technical proposal in the existing technology more clearly, below will be to embodiment
Or attached drawing needed to be used in the description of the prior art is briefly described, it should be apparent that, the accompanying drawings in the following description is only
It is the embodiments of the present invention, for those of ordinary skill in the art, without creative efforts, also
Other attached drawings can be obtained according to disclosed attached drawing.
Fig. 1 is 2 times of charge pump booster circuit schematic diagrams of one kind disclosed in the prior art；
Fig. 2 is 2 times of charge pump booster circuit work of one kind disclosed in the prior art in the schematic diagram of charging phase；
Fig. 3 is 2 times of charge pump booster circuit work of one kind disclosed in the prior art in the schematic diagram of electric discharge phase；
Fig. 4 is a kind of 2 times of charge pump booster circuits work using low pressure and low power pipe disclosed in the utility model embodiment
In the schematic diagram of charging phase；
Fig. 5 is a kind of 2 times of charge pump booster circuits work using low pressure and low power pipe disclosed in the utility model embodiment
In the schematic diagram of electric discharge phase；
Fig. 6 is a kind of circuit diagram of charge pump booster circuit short-circuit protection circuit disclosed in the utility model embodiment；
Fig. 7 is a kind of simulation waveform of charge pump booster circuit short-circuit protection circuit disclosed in the utility model embodiment
Figure.
Specific embodiment
The following will be combined with the drawings in the embodiments of the present invention, carries out the technical scheme in the embodiment of the utility model
Clearly and completely describe, it is clear that the described embodiments are only a part of the embodiments of the utility model, rather than whole
Embodiment.Based on the embodiments of the present invention, those of ordinary skill in the art are without making creative work
Every other embodiment obtained, fall within the protection scope of the utility model.
Referring to Fig. 1,2 times of boosting charge pump booster circuit schematic diagrams of one kind disclosed in the prior art, 2 times of boosting charge pump liters
Shown in the dotted line frame of volt circuit as shown in figure 1, comprising: output voltage detecting circuit 11, overvoltage crowbar 12, charge pump boosting electricity
Road control circuit 13, reference circuit 14, clock generation circuit 15, charge pump booster circuit 16, over-current detection circuit 17 and current limliting
Control circuit 18.
Wherein, the charge pump booster circuit 16 in Fig. 1 includes four switching tubes, as shown in Fig. 2, one disclosed in the prior art
The schematic diagram that charge pump booster circuit works when charging phase is planted, four switching tubes in charge pump booster circuit are respectively as follows:
PMOS tube P0, PMOS tube P2, PMOS tube P3 and NMOS tube N1, by the timing control to four switching tubes, so that charge pump liter
The output voltage VUOT of volt circuit is 2 times of input voltage VBAT.
The course of work of charge pump booster circuit is there are two phase, in charging phase, as shown in Fig. 2, PMOS tube P0 and
NMOS tube N1 conducting, PMOS tube P2 and PMOS tube P3 shutdown, the grid of PMOS tube P0 are connected to GND, and input voltage VBAT is to non-
Capacitor Cf charging, current direction are shown in the dotted line in Fig. 2, at this point, the electric current for flowing through noncapacitive Cf is 2Iout, charge pump boosting electricity
Road work is Iout in the electric current of output.
In electric discharge phase, current direction is shown in the dotted line in Fig. 3, PMOS tube P0 and NMOS tube N1 shutdown, PMOS tube P2 and
PMOS tube P3 conducting, the grid of PMOS tube P0 are connected to VH, and VH selects high circuit for input voltage VBAT's and output voltage VO UT,
Electric discharge phase current is poured into voltage input end by voltage output end is counter in order to prevent, since the voltage at capacitor both ends cannot be mutated, because
The voltage superposition of this noncapacitive Cf makes output voltage VO UT be raised to 2 times of input voltage VBAT on input voltage VBAT.
Noncapacitive Cf the end CP voltage range be VBAT~2VBAT, noncapacitive Cf the end CN voltage range be 0~
VBAT, therefore, the voltage at four power tube both ends do not exceed input voltage VBAT, and all there is no pressure-resistant problems.
As chip integration is higher and higher, in order to save chip area, in numerous high-voltage applications, it will usually using low
Power tube of the voltage device as charge pump booster circuit, at this time uniquely it is envisaged that the gate source voltage VGS and grid-of power tube
Underlayer voltage VGB is no more than input voltage VBAT.
Based on this, the utility model improves charge pump booster circuit shown in Fig. 2 and Fig. 3.
Referring to fig. 4 and Fig. 5, respectively a kind of 2 times of electricity using low pressure and low power pipe disclosed in an embodiment of the present invention
Lotus pump booster circuit work charging phase schematic diagram and work electric discharge phase schematic diagram, circuit shown in Fig. 4 and Fig. 5 respectively with
Fig. 2 is similar with the circuit structure in Fig. 3, and difference is, the substrate BULK of the PMOS tube P0 for the phase that charges has been connected to drain terminal, in this way
The reason of connecing is that charge pump booster circuit uses low pressure and low power pipe, and the gate voltage range of NMOS tube N1 is 0~VBAT,
The gate voltage range of PMOS tube P2 is 0~VBAT, and the gate voltage range of PMOS tube P3 is VBAT~2VBAT, therefore respectively end
Between voltage do not exceed pressure voltage.Wherein, the gate voltage range of PMOS tube P0 is 0~2VBAT, and source-drain voltage is up to
VBAT, gate drive voltage are up to VBAT, if the BULK of PMOS tube P0 is connected to VH (VH 2VBAT), if VBAT=4V, VH=
2VBAT then makes PMOS tube P0 when charging is conducted, grid-underlayer voltage VGB=8V, P0 power tube grid-of PMOS tube P0
Underlayer voltage is more than its pressure voltage and burns.Therefore, using Fig. 4 and circuit shown in fig. 5, it can be ensured that between each power tube
Voltage is respectively less than input voltage VBAT.
But charge pump booster circuit is in test process or application process, and so that output end is shorted to GND, usual electricity
Lotus pump booster circuit will start short-circuit protection function, when output end is shorted to GND by the grid voltage by limiting power tube
Current limit is exported in hundred milliamperes of safe rangies.After Fig. 4 and charge pump booster circuit shown in fig. 5, since there are PMOS
Therefore the substrate forward diode of pipe P0 causes short circuit current to be up to 2A or more, be very easy to burn power tube, therefore, in electricity
The output end of lotus pump booster circuit needs to increase charge pump booster circuit short-circuit protection circuit, to solve because of charge pump booster circuit
It is easy the problem of burning power tube because of short circuit or can not being restarted automatically after short circuit.
The utility model embodiment discloses a kind of charge pump booster circuit short-circuit protection circuit, comprising: short-circuit detecting electricity
Road, timing trigger circuit and short-circuit protection time generation circuit, short-circuit detecting circuit is by comparing the defeated of charge pump booster circuit
The size relation of voltage and short-circuit detecting threshold value out, determines whether charge pump booster circuit occurs short circuit, and is determining charge pump
When short circuit occurs for booster circuit, outputting charge pump booster circuit short circuit indication signal gives timing trigger circuit, triggers electricity by timing
Road outputting charge pump booster circuit short-circuit signal and charge pump booster circuit shutdown signal make charge pump booster circuit stop work
Make, short-circuit protection time generation circuit is when charge pump booster circuit short circuit duration reaches preset time, triggering timing triggering electricity
Road stops outputting charge pump booster circuit shutdown signal, works normally charge pump booster circuit.Therefore, the utility model is effective
It solves in high-voltage applications, because charge pump booster circuit can not carry out short-circuit protection, and charge pump booster circuit is caused to be easy
The problem of burning power tube because of short circuit.
Referring to Fig. 6, a kind of circuit of charge pump booster circuit short-circuit protection circuit disclosed in an embodiment of the present invention
Figure, which includes: short-circuit detecting circuit 21, timing trigger circuit 22 and short-circuit protection time generation circuit 23, wherein timing
The original state of trigger circuit 22 is reset state；
The input terminal of short-circuit detecting circuit 21 and the output end of charge pump booster circuit connect, wherein charge pump boosting electricity
The substrate of the adjustment pipe of the charging phase on road connect with the drain terminal of the adjustment pipe namely the substrate of the PMOS tube P0 in Fig. 4 and Fig. 5 with
The drain terminal of PMOS tube P0 connects, and short-circuit detecting circuit 21 is used to detect the output voltage of charge pump booster circuit, and will be described defeated
Voltage is compared with short-circuit detecting threshold value out, and the first output end of short-circuit detecting circuit 21 is used to be less than when the output voltage
When the short-circuit detecting threshold value, indication signal is completed in the boosting of outputting charge pump booster circuit, and the second of short-circuit detecting circuit 21 is defeated
Outlet, which is used to export the charge pump booster circuit boosting in first output end, completes the time of indication signal more than threshold value
When the time, outputting charge pump booster circuit short circuit indication signal；
Timing trigger circuit 22 is connect with short-circuit detecting circuit 21, and timing trigger circuit 22 is for receiving the charge
After pumping booster circuit short circuit indication signal, outputting charge pump booster circuit short-circuit signal and charge pump booster circuit close letter
Number, so that charge pump booster circuit is stopped working；
Short-circuit protection time generation circuit 23 is connect with timing trigger circuit 22, and short-circuit protection time generation circuit 23 is used for
When charge pump booster circuit short circuit duration reaches preset time, control sequential trigger circuit 22 stops outputting charge pump boosting electricity
Road shutdown signal.
It should be noted that in the present embodiment, the output end of charge pump booster circuit namely charge pump booster circuit it is defeated
Outlet.
In summary, charge pump booster circuit short-circuit protection circuit disclosed by the utility model, comprising: short-circuit detecting circuit
21, timing trigger circuit 22 and short-circuit protection time generation circuit 23, short-circuit detecting circuit 21 is by comparing charge pump boosting electricity
The output voltage on road and the size relation of short-circuit detecting threshold value, determine whether charge pump booster circuit occurs short circuit, and in determination
When short circuit occurs for charge pump booster circuit, outputting charge pump booster circuit short circuit indication signal to timing trigger circuit 22, by when
22 outputting charge pump booster circuit short-circuit signal of sequence trigger circuit and charge pump booster circuit shutdown signal, make charge pump boost
Circuit stops working, and short-circuit protection time generation circuit 23 is when charge pump booster circuit short circuit duration reaches preset time, touching
It sends out timing trigger circuit 22 and stops outputting charge pump booster circuit shutdown signal, work normally charge pump booster circuit.Therefore,
The utility model efficiently solves in high-voltage applications, because charge pump booster circuit can not carry out short-circuit protection, and leads to charge
Pump booster circuit is easy the problem of burning power tube because of short circuit.
In order to further optimize the above embodiments, short-circuit detecting circuit 21 is also used in the output for determining charge pump booster circuit
When voltage is not less than the short-circuit detecting threshold value, outputting charge pump booster circuit short circuit cancel message.
Timing trigger circuit 22 is for receiving the charge pump booster circuit short circuit cancel message, and outputting charge pump boosts
Circuit Restart Signal, makes charge pump booster circuit rework.
In summary, charge pump booster circuit short-circuit protection circuit disclosed by the utility model, can not only be in charge pump
When short circuit occurs for booster circuit, charge pump booster circuit is closed, moreover, it is also possible to the output of real-time detection charge pump booster circuit
Voltage, and after determining charge pump booster circuit short circuit revocation, start charge pump booster circuit automatically, to efficiently solve
In high-voltage applications, because charge pump booster circuit can not carry out short-circuit protection, and charge pump booster circuit is caused to be easy due to short circuit
Problem can not be restarted automatically after the problem of burning power tube and short circuit.
As shown in fig. 6, timing trigger circuit 22 includes: the first d type flip flop DFF1, the second d type flip flop DFF2, the 3rd D touching
Send out device DFF3 and the first NAND gate NAND1；
The output end of the data input pin connection short-circuit detecting circuit 21 of second d type flip flop DFF2, for obtaining short-circuit inspection
The charge pump booster circuit short circuit indication signal that slowdown monitoring circuit 21 exports, meanwhile, the input end of clock input of the second d type flip flop DFF2
The data latch output of clock signal, the second d type flip flop DFF2 is used for output short-circuit indication signal；
The input end of clock of first d type flip flop DFF1 is connect with the data latch output of the second d type flip flop DFF2, and first
The short-circuit indication signal that d type flip flop DFF1 is used to export the second d type flip flop DFF2 is as clock sampling signal, the first D triggering
The first data latch output Q of device DFF1 sets high RST ST_SET for output short-circuit and sets 1 end to third d type flip flop DFF3
S makes the data latch output outputting charge pump booster circuit short-circuit signal of third d type flip flop DFF3；
First NAND gate NAND2 respectively with the second data latch output and third d type flip flop of the first d type flip flop DFF1
The resetting end R connection of DFF3, the first NAND gate NAND2 are used for the output charge in the second data latch output non-output signal
Pump booster circuit shutdown signal.
In embodiment illustrated in fig. 6, further includes: the first phase inverter INV1, the second phase inverter INV2 and the second NAND gate
NAND2；
The output end of data input pin D the second phase inverter of connection INV2 of third d type flip flop DFF3, the second phase inverter INV2
Input terminal connect the output end of the second NAND gate NAND2, the first input end of the second NAND gate NAND2 connects the 3rd D triggering
The second input terminal of data the latch output Q, the second NAND gate NAND2 of device DFF3 connect the output of the first phase inverter INV1
End, the input terminal of the first phase inverter INV1 are connect with the first output end of short-circuit detecting circuit 21.
In embodiment illustrated in fig. 6, further includes: nor gate NOR1 and third phase inverter INV3；
Second d type flip flop DFF2's sets 1 end ground connection, the resetting end R of the second d type flip flop DFF2 and the first d type flip flop DFF1
Resetting end R common end connection nor gate NOR1 output end, the nor gate NOR1 first input end connection third it is anti-
The output end of phase device INV3, the output of the second input terminal connection short-circuit protection time generation circuit 23 of the nor gate NOR1
End, the input terminal of short-circuit protection time generation circuit 23 are separately connected the first data latch output Q of the first d type flip flop DFF1
1 end S is set with third d type flip flop DFF3.
For convenience of understanding, with reference to the accompanying drawing 6, the work that charge pump booster circuit short-circuit protection circuit is described in detail is former
Reason, specific as follows:
When the output terminal shortcircuit of charge pump booster circuit, short-circuit detecting circuit 21 detect charge pump booster circuit it is defeated
Voltage can be less than short-circuit detecting threshold value Vth_sht out, at this point, the charge pump booster circuit that short-circuit detecting circuit 21 exports has boosted
It can become low level signal at indication signal VOUTOK, in other words, the charge pump booster circuit liter that short-circuit detecting circuit 21 exports
It is 0 that pressure, which completes indication signal VOUTOK,.
When indication signal is completed in the charge pump booster circuit boosting that short-circuit detecting circuit 21 exports low level signal form
When the time of VOUTOK is more than threshold time Tth_sht, the charge pump booster circuit short circuit that short-circuit detecting circuit 21 exports is indicated
Signal FAULT becomes high level signal, and is input to the data input pin of the second d type flip flop DFF2, meanwhile, the second d type flip flop
The data latch output output short-circuit of input end of clock the input clock signal CLK, the second d type flip flop DFF2 of DFF2 indicate letter
Number FAULT_SHT becomes high level signal, and is input to the input end of clock of the first d type flip flop DFF1, as the first d type flip flop
High RST ST_ is set in the short circuit of the clock sampling signal of DFF1, the first data latch output Q output of the first d type flip flop DFF1
SET becomes high level signal, and is input to third d type flip flop DFF3 setting 1 end S, locks the data of third d type flip flop DFF3
Output end outputting charge pump booster circuit short-circuit signal is deposited, in practical applications, even if the also data lock of third d type flip flop DFF3
The CP_SHORT for depositing output end output sets height, shows to have occurred charge pump booster circuit short circuit, while the first d type flip flop DFF1
Second data latch outputOutput is 0, makes NAND gate NAND1 outputting charge pump booster circuit shutdown signal, even if also PD_
CP is high level, to close charge pump booster circuit, even if PMOS tube P0, NMOS tube N1, PMOS tube P2 in Fig. 4 and Fig. 5 and
PMOS tube P3 is turned off, and stops providing charge to output capacitance.
If the charge pump booster circuit that short-circuit detecting circuit 21 exports boosts, completion indication signal VOUTOK is low always, the
It is high level that high RST ST_SET is set in the short circuit of the first data latch output Q output of one d type flip flop DFF1 always, then short-circuit
Guard time generation circuit 23 is used for the timing of short-circuit protection time, when determining that the short-circuit protection time reaches preset time
After Tprotect, short-circuit protection time generation circuit 23, which exports high level, makes RESET 0, the second d type flip flop DFF2 of reset and the
One d type flip flop DFF1 makes the first data latch output Q of the first d type flip flop DFF1 stop output signal, even if ST_SET believes
Number become 0, while resetting short-circuit protection time generation circuit 23, making the output of short-circuit protection time generation circuit 23 is 0.At this point,
The second data latch output of first d type flip flop DFF1Output is high level, and NOT gate NAND2 is made to stop outputting charge pump liter
Volt circuit shutdown signal works normally charge pump booster circuit even if PD_CP=0.
If the output end VOUT of charge pump booster circuit is still short-circuit, the charge pump booster circuit of the output of short-circuit detecting circuit 21
Boosting completes indication signal VOUTOK and remains as 0, at this point, repeating the above process, closes charge pump booster circuit, makes charge pump liter
Volt circuit is in short circuit protection mode, until charge pump booster circuit output terminal shortcircuit revocation.
After charge pump booster circuit output terminal shortcircuit revocation, the output end voltage of charge pump booster circuit is gradually increasing,
Indication signal VOUTOK is completed in the charge pump booster circuit boosting that short-circuit detecting circuit 21 exports becomes high level signal, the 3rd D
Trigger DFF3 output is 0, i.e. CP_SHORT is 0, and charge pump booster circuit is made to exit short-circuit protection state.
For convenience of understanding, the utility model also emulates charge pump booster circuit short-circuit protection circuit, emulation knot
Fruit simulation waveform shown in Figure 7, from analogous diagram as can be seen that when short-circuit detecting circuit 21 detects charge pump boosting electricity
When the output voltage on road is less than short-circuit detecting threshold value Vth_sht, the charge pump booster circuit that short-circuit detecting circuit 21 exports boosts
Completing indication signal VOUTOK becomes low level, and output waveform is consistent with foregoing description at this time, closes charge pump booster circuit
After Tprotect, charge pump booster circuit is reopened.
In summary, charge pump booster circuit short-circuit protection circuit disclosed by the utility model, can not only be in charge pump
When short circuit occurs for booster circuit, charge pump booster circuit is closed, moreover, it is also possible to the output of real-time detection charge pump booster circuit
Voltage, and after determining charge pump booster circuit short circuit revocation, start charge pump booster circuit automatically, to efficiently solve
In high-voltage applications, because charge pump booster circuit can not carry out short-circuit protection, and charge pump booster circuit is caused to be easy due to short circuit
Problem can not be restarted automatically after the problem of burning power tube and short circuit.
Finally, it is to be noted that, herein, relational terms such as first and second and the like be used merely to by
One entity or operation are distinguished with another entity or operation, without necessarily requiring or implying these entities or operation
Between there are any actual relationship or orders.Moreover, the terms "include", "comprise" or its any other variant meaning
Covering non-exclusive inclusion, so that the process, method, article or equipment for including a series of elements not only includes that
A little elements, but also including other elements that are not explicitly listed, or further include for this process, method, article or
The intrinsic element of equipment.In the absence of more restrictions, the element limited by sentence "including a ...", is not arranged
Except there is also other identical elements in the process, method, article or apparatus that includes the element.
Each embodiment in this specification is described in a progressive manner, the highlights of each of the examples are with other
The difference of embodiment, the same or similar parts in each embodiment may refer to each other.
The foregoing description of the disclosed embodiments can be realized professional and technical personnel in the field or using originally practical new
Type.Various modifications to these embodiments will be readily apparent to those skilled in the art, and determine herein
The General Principle of justice can be realized in other embodiments without departing from the spirit or scope of the present utility model.Cause
This, the present invention will not be limited to the embodiments shown herein, and is to fit to and principles disclosed herein
The widest scope consistent with features of novelty.
Claims (5)
1. a kind of charge pump booster circuit short-circuit protection circuit characterized by comprising short-circuit detecting circuit, timing triggering electricity
Road and short-circuit protection time generation circuit, wherein the original state of the timing trigger circuit is reset state；
The input terminal of the short-circuit detecting circuit and the output end of charge pump booster circuit connect, and the short-circuit detecting circuit is used for
The output voltage of the charge pump booster circuit is detected, and the output voltage is compared with short-circuit detecting threshold value, it is described
First output end of short-circuit detecting circuit is used for when the output voltage is less than the short-circuit detecting threshold value, outputting charge pump liter
Indication signal is completed in volt circuit boosting, and the second output terminal of the short-circuit detecting circuit is used to export institute in first output end
When stating the time of charge pump booster circuit boosting completion indication signal more than threshold time, outputting charge pump booster circuit short circuit refers to
Show signal, wherein the substrate of the adjustment pipe of the charging phase of the charge pump booster circuit is connect with the drain terminal of the adjustment pipe；
The timing trigger circuit is connect with the short-circuit detecting circuit, and the timing trigger circuit is for receiving the electricity
After lotus pumps booster circuit short circuit indication signal, outputting charge pump booster circuit short-circuit signal and charge pump booster circuit close letter
Number, so that the charge pump booster circuit is stopped working；
The short-circuit protection time generation circuit is connect with the timing trigger circuit, and the short-circuit protection time generation circuit is used
Stop exporting the charge in when charge pump booster circuit short circuit duration reaches preset time, controlling the timing trigger circuit
Pump booster circuit shutdown signal.
2. charge pump booster circuit short-circuit protection circuit according to claim 1, which is characterized in that the short-circuit detecting electricity
Road is also used to when the output voltage for determining the charge pump booster circuit is not less than the short-circuit detecting threshold value, output electricity
Lotus pumps booster circuit short circuit cancel message；
The timing trigger circuit is also used to receive the charge pump booster circuit short circuit cancel message, and outputting charge pump boosts
Circuit Restart Signal makes the charge pump booster circuit rework.
3. charge pump booster circuit short-circuit protection circuit according to claim 1, which is characterized in that the timing triggering electricity
Road includes: the first d type flip flop, the second d type flip flop, third d type flip flop and the first NAND gate；
The data input pin of the second d type flip flop DFF connects the output end of the short-circuit detecting circuit, described short for obtaining
The charge pump booster circuit short circuit indication signal of alignment detection circuit output, meanwhile, the clock input of second d type flip flop
Input clock signal is held, the data latch output of second d type flip flop is used for output short-circuit indication signal；
The input end of clock of first d type flip flop is connect with the data latch output of second d type flip flop, and described first
The short-circuit indication signal that d type flip flop is used to export second d type flip flop is as clock sampling signal, the first D
The first data latch output of trigger DFF1 sets high RST for output short-circuit and sets 1 end to the third d type flip flop, makes
The data latch output outputting charge pump booster circuit short-circuit signal of the third d type flip flop；
First NAND gate respectively with the second data latch output of first d type flip flop and the third d type flip flop
Resetting end connection, first NAND gate be used in the second data latch output non-output signal outputting charge pump boost
Circuit shutdown signal.
4. charge pump booster circuit short-circuit protection circuit according to claim 3, which is characterized in that further include: first is anti-
Phase device, the second phase inverter and the second NAND gate；
The data input pin of the third d type flip flop DFF3 connects the output end of second phase inverter, second phase inverter
Input terminal connect the output end of second NAND gate, the first input end of second NAND gate connects the 3rd D touching
The data latch output of device is sent out, the second input terminal of second NAND gate connects the output end of first phase inverter, institute
The input terminal for stating the first phase inverter is connect with the first output end of the short-circuit detecting circuit.
5. charge pump booster circuit short-circuit protection circuit according to claim 4, which is characterized in that further include: nor gate
With third phase inverter；
Second d type flip flop sets 1 end ground connection, the resetting at the resetting end and first d type flip flop of second d type flip flop
The common end at end connects the output end of the nor gate, and the first input end of the nor gate connects the defeated of the third phase inverter
Outlet, the second input terminal of the nor gate connect the output end of the short-circuit protection time generation circuit, the short-circuit protection
The input terminal of time generation circuit is separately connected the first data latch output and the 3rd D touching of first d type flip flop
Hair device sets 1 end.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920060237.7U CN209184234U (en) | 2019-01-14 | 2019-01-14 | A kind of charge pump booster circuit short-circuit protection circuit |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201920060237.7U CN209184234U (en) | 2019-01-14 | 2019-01-14 | A kind of charge pump booster circuit short-circuit protection circuit |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| CN209184234U true CN209184234U (en) | 2019-07-30 |
Family
ID=67378628
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| CN201920060237.7U Withdrawn - After Issue CN209184234U (en) | 2019-01-14 | 2019-01-14 | A kind of charge pump booster circuit short-circuit protection circuit |
Country Status (1)
| Country | Link |
|---|---|
| CN (1) | CN209184234U (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109546623A (en) * | 2019-01-14 | 2019-03-29 | 上海艾为电子技术股份有限公司 | A kind of charge pump booster circuit short-circuit protection circuit |
-
2019
- 2019-01-14 CN CN201920060237.7U patent/CN209184234U/en not_active Withdrawn - After Issue
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN109546623A (en) * | 2019-01-14 | 2019-03-29 | 上海艾为电子技术股份有限公司 | A kind of charge pump booster circuit short-circuit protection circuit |
| CN109546623B (en) * | 2019-01-14 | 2023-12-01 | 上海艾为电子技术股份有限公司 | Short-circuit protection circuit of charge pump boost circuit |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| CN104201652B (en) | Power protection control method | |
| CN102709880B (en) | Module with optocoupler protection function | |
| US9664714B2 (en) | Methods and devices for detecting the input voltage and discharging the residuevoltage | |
| CN108964426A (en) | A kind of the control chip and AC-DC system of synchronous rectifier | |
| CN102820764A (en) | control circuit, switching converter and control method thereof | |
| CN102540642B (en) | Digital flash lamp and method for controlling flashing of digital flash lamp | |
| CN105119240A (en) | Short-circuit protection circuit of primary-side feedback voltage sampling resistor | |
| CN204810248U (en) | Power delay switch circuit and have terminal of this circuit | |
| CN107276036B (en) | A kind of CS sampling resistor short-circuit protection of Switching Power Supply | |
| CN104143818B (en) | Prevent the device that current-limiting circuit is excessively adjusted | |
| CN206422685U (en) | A kind of soft starting circuit for suppressing surge current | |
| CN210804315U (en) | Automatic power-on circuit and mainboard | |
| CN104201644B (en) | The method of overvoltage crowbar and overvoltage protection | |
| CN209184234U (en) | A kind of charge pump booster circuit short-circuit protection circuit | |
| CN110190584A (en) | The self-test chip of earth leakage protective device | |
| CN109546623A (en) | A kind of charge pump booster circuit short-circuit protection circuit | |
| CN203645292U (en) | An overvoltage over-current protection circuit | |
| CN110501555A (en) | A kind of parallel IGBT delay current foldback circuit based on saturation voltage drop detection | |
| CN104734131B (en) | Arrester monitoring system with sound alarm function | |
| CN103326323B (en) | Switching power supply protective circuit and method | |
| CN202396068U (en) | Electronic ballast of metal halogen lamp | |
| CN204835501U (en) | Output overvoltage crowbar | |
| CN109842401B (en) | Latch-up resistant device and CMOS chip | |
| CN110855278A (en) | Instantaneous residual voltage locking module with anti-shake function | |
| CN106230249A (en) | The control method of a kind of AC/DC change-over circuit and control module |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| GR01 | Patent grant | ||
| GR01 | Patent grant | ||
| AV01 | Patent right actively abandoned |
Granted publication date: 20190730 Effective date of abandoning: 20231201 |
|
| AV01 | Patent right actively abandoned |
Granted publication date: 20190730 Effective date of abandoning: 20231201 |
|
| AV01 | Patent right actively abandoned | ||
| AV01 | Patent right actively abandoned |